CN110383609A - Light emitting semiconductor module and its control method - Google Patents

Light emitting semiconductor module and its control method Download PDF

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Publication number
CN110383609A
CN110383609A CN201880016036.5A CN201880016036A CN110383609A CN 110383609 A CN110383609 A CN 110383609A CN 201880016036 A CN201880016036 A CN 201880016036A CN 110383609 A CN110383609 A CN 110383609A
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China
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light
region
emitting elements
axis
semiconductor light
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Inventor
杉山贵浩
泷口优
黑坂刚孝
广瀬和义
野本佳朗
上野山聪
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Hamamatsu Photonics KK
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Hamamatsu Photonics KK
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1231—Grating growth or overgrowth details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1203—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers over only a part of the length of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs

Abstract

Light emitting semiconductor module involved in present embodiment includes the multiple semiconductor light-emitting elements for exporting the light of desired light beam projecting pattern respectively and the supporting substrates for keeping multiple semiconductor light-emitting elements, multiple semiconductor light-emitting elements respectively include the phase-modulation layer for making target beam projection pattern be formed in target beam view field, and multiple semiconductor light-emitting elements include light beam projecting direction, target beam projection pattern 1st and 2nd semiconductor light-emitting elements different at least either in emission wavelength.

Description

Light emitting semiconductor module and its control method
Technical field
The present invention relates to light emitting semiconductor module and its control methods.
Background technique
The active layer of the semiconductor light-emitting elements recorded in patent document 1 and the phase-modulation with active layer optical bond Layer.Phase-modulation layer has the multiple and different refractive index areas of Primary layer and configuration in Primary layer.It is recorded in patent document 1 Semiconductor light-emitting elements export beam pattern (light beam projecting pattern) corresponding with the configuration pattern of multiple and different refractive index areas Light.That is, the configuration pattern of multiple and different refractive index areas is according to the beam pattern setting as target.In patent document 1, Also have to the application examples of such semiconductor light-emitting elements recorded.Above application examples is by the direction of the laser beam respectively exported Different multiple semiconductor light-emitting elements are in one-dimensional or two-dimensional arrangements on supporting substrates.Moreover, above application examples with pass through by The multiple semiconductor light-emitting elements arranged are successively lighted and are constituted to the mode of object scanning laser light beam.Above application examples Applied to being carried out and to object scanning laser light beam into the range determination of object, the laser processing of object etc..
Existing technical literature
Patent document
Patent document 1: International Publication WO2016/148075
Non-patent literature
Non-patent literature 1:Y.Kurosaka et al., " Effects of non-lasing band in two- dimensional photonic-crystal lasers clarified using omnidirectional band Structure, " Opt.Express 20,21773-21783 (2012)
Non-patent literature 2:K.Sakai et al., " Coupled-Wave Theory for Square-Lattice Photonic Crystal Lasers With TE Polarization, " IEEE J.Q.E.46,788-795 (2010)
Non-patent literature 3:Peng, et al., " Coupled-wave analysis for photonic-crystal Surface-emitting lasers on air holes with arbitrary sidewalls, " Optics Express Vol.19, No.24, pp.24672-24686 (2011)
Summary of the invention
Problem to be solved by the invention
Inventor studies the above-mentioned prior art, as a result, it has been found that following problems.That is, remembering in patent document 1 The semiconductor light-emitting elements of load are despite the element for being able to carry out various applications, but the application examples recorded in patent document 1 It is very limited.Therefore, seeking can be by the application range further expansion for the semiconductor light-emitting elements recorded in patent document 1 Light emitting semiconductor module.
The present invention is to solve the problems, such as invention that is as described above and completing, and its purpose is to provide can further expand The light emitting semiconductor module and its control method of the application range for the semiconductor light-emitting elements recorded in big above patent document 1.
Technical means to solve problem
Light emitting semiconductor module involved in present embodiment includes multiple semiconductor light-emitting elements and for keeping this more The supporting substrates of a semiconductor element.Multiple semiconductor light-emitting elements are respectively provided with the 1st face of output light and opposite with the 1st face The 2nd face.Supporting substrates have the 3rd face, 4th face opposite with the 3rd face and respectively correspond with multiple semiconductor light-emitting elements , multiple driving electrodes of the configuration on the 3rd face.Multiple semiconductor light-emitting elements are with the of multiple semiconductor light-emitting elements 2 faces and the 3rd face across multiple driving electrodes and opposite state is positioned on the 3rd face.
Multiple semiconductor light-emitting elements are respectively provided with active layer, phase-modulation layer, the 1st clad, the 2nd clad, the 1st face Lateral electrode and the 2nd surface side electrode.Active layer is between the 1st face and the 2nd face.Phase-modulation layer be located at the 1st face and the 2nd face it Between, it is the layer with active layer optical bond.In addition, phase-modulation layer includes fundamental region and multiple and different refractive index areas, it is somebody's turn to do Fundamental region has the 1st refractive index, and multiple different refractivity region is separately positioned in fundamental region, and has and the 1st The 2nd different refractive index of refractive index.1st clad is matched relative to the laminate structure for including at least active layer and phase-modulation layer Set the side being located in the 1st face.2nd clad configures the side being located in the 2nd face relative to laminate structure.1st face Lateral electrode configures the side being located in the 1st face relative to the 1st clad.2nd surface side electrode is configured relative to the 2nd clad The side that 2nd face is located at.In addition, the 2nd surface side electrode is electrically connected with the corresponding driving electrodes in multiple driving electrodes.
Further more, multiple and different refractive index areas are located at the imaginary tetragonal from fundamental region according to respective center of gravity In each lattice-site deviate as defined in the such configuration pattern in place of distance configure in fundamental region.Configure pattern with from From the light beam projecting pattern of the light of the 1st face output and as the light beam projecting pattern when corresponding driving electrodes supply driving current Drop shadow spread light beam projecting region and the consistent mode of target beam projection pattern and target beam view field determine.
At least the 1st semiconductor light-emitting elements and the 2nd semiconductor light-emitting elements in especially multiple semiconductor light-emitting elements It is different in at least any structure in the 1st~the 3rd structure below.In addition, the 1st structure is in the 1st and the 2nd semiconductor light emitting element Between part, the light beam projecting direction as defined in the direction of travel of the light towards target beam view field is different.In this case, As an example, the target beam view field of the 1st semiconductor light-emitting elements and the mesh of the 2nd semiconductor light-emitting elements can be made It is substantially consistent to mark light beam projecting region.2nd structure passes through the target beam projection pattern and the 2nd of the 1st semiconductor light-emitting elements The target beam projection pattern differences of semiconductor light-emitting elements provides.3rd structure is shone by the 1st semiconductor light-emitting elements The emission wavelength differences of wavelength and the 2nd semiconductor light-emitting elements provides.
The control method of light emitting semiconductor module involved in present embodiment will be provided with partly leading for structure as described above Multiple semiconductor light-emitting elements of body light emitting module pass through driving circuit respectively and individually control.In specific drive control, For example, selecting 1 or 1 or more semiconductor light-emitting elements in multiple semiconductor light-emitting elements as driven object, passing through drive Dynamic circuit individually controls the respective movement of semiconductor element of the selection.In addition, carried out using driving circuit it is other It further include the control by each selected semiconductor light-emitting elements while driving in control.In addition, being carried out using driving circuit Control carried out according to the control pattern that is individually set relative to each selected semiconductor light-emitting elements.Control pattern packet Containing the respective information at least defining driving opportunity and driving time along time shaft of selected semiconductor light-emitting elements.
The effect of invention
According to the present embodiment, the semiconductor light-emitting elements that can be recorded in further expansion patent document 1 are capable of providing Application range light emitting semiconductor module and its control method.
Detailed description of the invention
Fig. 1 is from the figure in terms of the 1st surface side of semiconductor light-emitting elements when the light emitting semiconductor module of the 1st embodiment.
Fig. 2 is from the figure in terms of the 4th surface side of supporting substrates when the light emitting semiconductor module of the 1st embodiment.
Fig. 3 be along Fig. 1 and Fig. 2 respectively shown in III-III line sectional view.
Fig. 4 is the schematic diagram for the configuration pattern (rotation mode) for illustrating the different refractivity region of phase-modulation layer.
Fig. 5 is to illustrate different refractivity region for an example as the configuration pattern determined by rotation mode Center of gravity G1 and imaginary tetragonal in lattice-site O positional relationship figure.
Fig. 6 is the target beam projection pattern (light image) and phase tune of the light for illustrating to export from semiconductor light-emitting elements The figure of the relationship of the rotation angular distribution of preparative layer.
Fig. 7 is an example of target beam projection pattern in the light emitting semiconductor module for indicate the 1st embodiment and right Corresponding original pattern carries out the figure of the phase distribution in COMPLEX AMPLITUDE obtained from inverse fourier transform.
Fig. 8 is the block diagram for indicating to have the structure of the light emitting device of the light emitting semiconductor module of the 1st embodiment.
Fig. 9 is from the figure in terms of the 1st surface side of semiconductor light-emitting elements when the light emitting semiconductor module of the 2nd embodiment.
Figure 10 is from the figure in terms of the 4th surface side of supporting substrates when the light emitting semiconductor module of the 2nd embodiment.
Figure 11 be along Fig. 9 and Figure 10 respectively shown in X-X line sectional view.
Figure 12 is an example of target beam projection pattern in the light emitting semiconductor module for indicate the 2nd and the 3rd embodiment Son and the figure that the phase distribution in COMPLEX AMPLITUDE obtained from inverse fourier transform is carried out to corresponding original pattern.
Figure 13 is Figure 12 in the light emitting semiconductor module for indicate the 2nd and the 3rd embodiment with target beam projection pattern A different example and the phase in COMPLEX AMPLITUDE obtained from inverse fourier transform is carried out to corresponding original pattern The figure of distribution.
Figure 14 is the block diagram for indicating to have the structure of the light emitting device of the light emitting semiconductor module of the 2nd embodiment.
Figure 15 is from the figure in terms of the 1st surface side of semiconductor light-emitting elements when the light emitting semiconductor module of the 3rd embodiment.
Figure 16 is from the figure in terms of the 4th surface side of supporting substrates when the light emitting semiconductor module of the 3rd embodiment.
Figure 17 is the sectional view of the XVI-XVI line along Figure 15 and Figure 16.
Figure 18 is the block diagram for indicating to have the structure of the light emitting device of the light emitting semiconductor module of the 3rd embodiment.
Figure 19 is from the figure in terms of the 1st surface side of semiconductor light-emitting elements when the light emitting semiconductor module of the 4th embodiment.
Figure 20 is from the figure in terms of the 4th surface side of supporting substrates when the light emitting semiconductor module of the 4th embodiment.
Figure 21 is the sectional view of the XX-XX line along Figure 19 and Figure 20.
Figure 22 be do not have in the shape for indicate the different refractivity region of X-Y plane 180 ° rotational symmetry shape Example (rotation mode) figure.
Figure 23 is the figure for indicating the 1st variation of phase-modulation layer shown in Fig. 4.
Figure 24 is to illustrate that not only setting is different for another example as the configuration pattern determined by rotation mode Refraction in the case where refractive index area (displacement different refractivity region) and setting lattice-site different refractivity region, different The figure of the positional relationship of the center of gravity and lattice-site different refractivity region in rate region (displacement different refractivity region).
Figure 25 is to indicate that different refractivity region (displacement different refractivity region) is not only arranged but also lattice-site is arranged not In the case where with refractive index area, different refractivity region (displacement different refractivity region) and lattice-site different refractivity area The figure of the combined example (rotation mode) in domain.
Figure 26 is to indicate that different refractivity region (displacement different refractivity region) is not only arranged but also lattice-site is arranged not The figure of variation (rotation mode) in the case where with refractive index area.
Figure 27 is the figure for indicating the 2nd variation of phase-modulation layer shown in Fig. 4.
Figure 28 is showing for configuration pattern (the axis shift-up mode) for illustrating the different refractivity region of phase-modulation layer It is intended to.
Figure 29 is to illustrate different refractivity area for an example as the configuration pattern determined by axis displacement mode The figure of the positional relationship of the lattice-site O of the center of gravity G1 and imaginary tetragonal in domain.
Figure 30 is the 1st variation of the phase-modulation layer as Figure 28, is indicated only in the specific region of phase-modulation layer Using the top view of the example of the nearly periodic structure of refractive index.
Figure 31 is to illustrate that the inverse fourier transform result from target beam projection pattern (light image) seeks phase angle distribution, certainly Determine the figure of the focus when configuration in different refractivity region.
Figure 32 is the example and semiconductor light-emitting elements for indicating the light beam projecting pattern exported from semiconductor light-emitting elements Intersect with light-emitting surface and the figure of the light intensity distributions (curve) on the section comprising the axis vertical with light-emitting surface.
Figure 33 is phase distribution corresponding with light beam projecting pattern shown in Figure 32 (a) and its magnified partial view.
Figure 34 is the figure for showing schematically the example of light beam projecting pattern of the traveling wave of all directions.In this embodiment, it enables straight Line L is 45 ° relative to the inclination angle of X-axis and Y-axis.
Figure 35 is the determining method of the configuration pattern as different refractivity region, and expression makes different refractivity region in crystalline substance The figure of the rotation mode and traveling wave AU, AD, AR, AL that are rotated around lattice point.
Figure 36 is the determining method of the configuration pattern as different refractivity region, and expression makes different refractivity region logical Cross lattice-site and relative to the axis shift-up mode and traveling wave AU, AD, AR, AL moved on the inclined axis of tetragonal Figure.
Figure 37 is the figure of an example (axis shift-up mode) for the flat shape for indicating different refractivity region.
Figure 38 is the figure of another example (axis shift-up mode) of the flat shape for indicating different refractivity region.
Figure 39 is the figure of another example (axis shift-up mode) of the flat shape for indicating different refractivity region.
Figure 40 is the figure for indicating the 2nd variation of phase-modulation layer of Figure 28.
Figure 41 is for illustrating from spherical coordinate (d1, θtilt, θrot) to the coordinate (x, y, z) in XYZ rectangular coordinate system The figure of coordinate transform.
Specific embodiment
[explanation of the embodiment of the present application]
The content of the embodiment of the present application is individually illustrated respectively first.
(1) light emitting semiconductor module of present embodiment includes multiple semiconductor light-emitting elements and use as one mode In the supporting substrates for keeping multiple semiconductor element.Multiple semiconductor light-emitting elements be respectively provided with output light the 1st face and with The 2nd opposite face of 1st face.Supporting substrates have the 3rd face, 4th face opposite with the 3rd face and with multiple semiconductor light emitting elements Multiple driving electrodes that part is corresponding, configuration is on the 3rd face.Multiple semiconductor light-emitting elements are sent out with multiple semiconductor 2nd face of optical element and the 3rd face across multiple driving electrodes and opposite state is positioned on the 3rd face.
Multiple semiconductor light-emitting elements are respectively provided with active layer, phase-modulation layer, the 1st clad, the 2nd clad, the 1st face Lateral electrode and the 2nd surface side electrode.Active layer is between the 1st face and the 2nd face.Phase-modulation layer be located at the 1st face and the 2nd face it Between, it is the layer with active layer optical bond.In addition, phase-modulation layer includes fundamental region and multiple and different refractive index areas, it is somebody's turn to do Fundamental region has the 1st refractive index, and multiple different refractivity region is separately positioned in fundamental region, and has and the 1st The 2nd different refractive index of refractive index.1st clad is matched relative to the laminate structure for including at least active layer and phase-modulation layer Set the side being located in the 1st face.2nd clad configures the side being located in the 2nd face relative to laminate structure.1st face Lateral electrode configures the side being located in the 1st face relative to the 1st clad.2nd surface side electrode is configured relative to the 2nd clad The side that 2nd face is located at.In addition, the 2nd surface side electrode is electrically connected with the corresponding driving electrodes in multiple driving electrodes.
Further more, multiple and different refractive index areas respectively according to for make by from corresponding driving electrodes supply driving current when The light beam projecting area of light beam projecting pattern and the drop shadow spread as the light beam projecting pattern that the light exported from the 1st face is shown Consistent configuration pattern is distinguished by domain and target beam projection pattern and target beam view field, configures the rule in fundamental region Positioning is set.
In addition, as the 1st precondition, by with the 1st face the consistent Z axis of normal direction and with include multiple and different foldings A face for penetrating the phase-modulation layer in rate region is consistent, XYZ as defined in X-Y plane comprising mutually orthogonal X-axis and Y-axis is straight In angular coordinate system, on the X-Y plane, setting by be respectively provided with square M1 (1 or more integer) × N1 (1 or more it is whole Number) the imaginary tetragonal that constitutes of a unit structure region R.At this point, configuration pattern provides as follows: by X-axis side To coordinates component x (1 or more M1 integer below) and Y direction coordinates component y (1 or more N1 integer below) it is specific In unit structure region R (x, y) on X-Y plane, it is located at the weight in the different refractivity region in unit structure region R (x, y) Heart G1 with as unit structure region R (x, y) center lattice-site O (x, y) separation distance r, and from lattice-site O (x, y) to The vector of center of gravity G1 is towards specific direction.
At least the 1st semiconductor light-emitting elements and the 2nd semiconductor light-emitting elements in especially multiple semiconductor light-emitting elements It is different in at least any structure in the 1st~the 3rd structure below.In addition, the 1st structure is in the 1st and the 2nd semiconductor light emitting element The light beam projecting direction as defined in the direction of travel of the light towards target beam view field is different between part.In this case, As an example, the target beam view field of the 1st semiconductor light-emitting elements and the mesh of the 2nd semiconductor light-emitting elements can be made It is substantially consistent to mark light beam projecting region.2nd structure passes through the target beam projection pattern and the 2nd of the 1st semiconductor light-emitting elements The target beam projection pattern differences of semiconductor light-emitting elements provides.3rd structure is shone by the 1st semiconductor light-emitting elements The emission wavelength differences of wavelength and the 2nd semiconductor light-emitting elements provides.
(2) control method about the light emitting semiconductor module of present embodiment will be provided with above-mentioned as one mode Multiple semiconductor light-emitting elements of the light emitting semiconductor module of such structure pass through driving circuit respectively and individually control.Having In the drive control of body, for example, selecting 1 or 1 or more semiconductor light-emitting elements in multiple semiconductor light-emitting elements, pass through Driving circuit individually controls the respective movement of semiconductor element of the selection.In addition, carried out using driving circuit it is individual Control in, further include by each selected semiconductor light-emitting elements and meanwhile driving control.In addition, using driving circuit into Capable control is carried out according to the control pattern individually set relative to each selected semiconductor light-emitting elements.Control pattern Include the respective information that driving opportunity and driving time are at least defined along time shaft of selected semiconductor light-emitting elements.
As described above, in the light emitting semiconductor module of present embodiment and its control method, multiple semiconductor light emitting elements At least two semiconductor light-emitting elements in part include above-mentioned 1st structure (target beam view field substantial consistent), on State at least appointing in the 2nd structure (target beam projection pattern inconsistent) and above-mentioned 3rd structure (emission wavelength inconsistent) One structure.According to this structure, the application examples for being able to carry out the semiconductor light-emitting elements recorded in patent document 1 (sweeps object Retouch the application examples of laser beam) other than various applications.For example, be able to carry out to by multiple patterns screen same area into Row switching display type various display devices application, to STED (Stimulated Emission Depletion (by Swash launch loss)) application of the light source of microscope, to continuously or intermittently to the type of the light of irradiation identical patterns at one The application of various illuminations, to by continuously to the pulsed light for irradiating identical patterns at one and wear as target in object Application of the laser processing of the type in the hole of pattern etc..
In the semiconductor light-emitting elements with structure as described above, have with the phase-modulation layer of active layer optical bond Have Primary layer and respectively embedment Primary layer in and be respectively provided with the refractive index different from the refractive index of the Primary layer it is multiple not Same refractive index area.In addition, in the unit structure region R (x, y) for constituting imaginary tetragonal, corresponding different refractivity area The center of gravity G1 and lattice-site O (x, y) in domain are discretely configured.Further more, pressing each list from lattice-site O to the direction of the vector of center of gravity G1 Bit architecture region R is individually set.In such a configuration, the phase of light beam is reflected according to from lattice-site O to corresponding difference Angle position around the direction of the vector of the center of gravity G1 in rate region, the i.e. lattice-site of the center of gravity G1 in the different refractivity region into Row variation.In this way, according to the present embodiment, can be controlled by only changing the position of centre of gravity in different refractivity region from each The light beam projecting pattern being integrally formed (can be formed the light of light image by the phase of the light beam of different refractivity region output Beam group) it controls into desired shape.At this point, the lattice-site in imaginary tetragonal can both be located at different refractivity region Outside, in addition, the lattice-site can also be located at different refractivity region inside.
(3) as a mode of present embodiment, the lattice constant of imaginary tetragonal is preferably enabled (substantially quite In lattice spacing) be a when, be located at unit structure region R (x, y) in different refractivity region center of gravity G1 and lattice-site O (x, Y) distance r meets 0≤r≤0.3a.In addition, as the light beam projecting pattern being emitted from above-mentioned semiconductor light-emitting elements is become Original image (light image before two dimensional inverse fourier transform), such as preferably comprise luminous point (spot), constituted by 3 points or more In luminous point group, straight line, cross, stick figure, lattice pattern, candy strip, figure, photo, computer graphical and character extremely It is a kind few.
(4) in a mode of present embodiment, other than the 1st precondition, as the 2nd precondition, XYZ is straight Coordinate (x, y, z) in angular coordinate system as shown in figure 41, relative to by the length d1 of radius vector, the tiltangleθ from Z axistiltWith The specific rotation angle θ from X-axis on an x-y planerotDefined spherical coordinate (d1, θtilt, θrot) meet with formula below (1) relationship that~formula (3) indicates.In addition, Figure 41 is for illustrating from spherical coordinate (d1, θtilt, θrot) to XYZ rectangular co-ordinate The figure of the coordinate transform of coordinate (x, y, z) in system is apparent in the XYZ rectangular co-ordinate as the real space by coordinate (x, y, z) The light image in the design in regulation plane (target beam view field) set in system.Order is equivalent to from semiconductor light-emitting elements The target beam projection pattern of the light image of output is towards by angle, θtiltAnd θrotWhen the set of the bright spot in defined direction, angle Spend θtiltAnd θrotIt is converted into the standardization wave number as defined in formula below (4), i.e. corresponding to the coordinate value k on the Kx axis of X-axisxWith With standardization wave number, the coordinate value k i.e. corresponding to Y-axis and on the Ky axis orthogonal with Kx axis as defined in formula below (5)y.Mark Standardization wave number refer to the wave number that will be equivalent to the lattice spacing of imaginary tetragonal as 1.0 standardized wave number.At this point, In the wave number space by Kx axis and Ky axis convention, the specific wave-number range comprising target beam projection pattern is by being respectively pros A image-region FR of M2 (1 or more the integer) × N2 (1 or more integer) of shape is constituted.In addition, integer M2 it is not absolutely required to It is consistent with integer M1.Equally, also it is not absolutely required to consistent with Integer N 1 for Integer N 2.In addition, formula (4) and formula (5) are for example upper Stating has disclosure in non-patent literature 1.
[numerical expression 1]
X=d1 sin θtiltcosθrot…(1)
[numerical expression 2]
Y=d1 sin θtiltsinθrot…(2)
[numerical expression 3]
Z=d1 cos θtilt…(3)
[numerical expression 4]
[numerical expression 5]
A: the lattice constant of above-mentioned imaginary tetragonal
λ: the oscillation wavelength of above-mentioned semiconductor light-emitting elements
As the 3rd precondition, in wave number space, by will be by the coordinates component k of Kx axis directionx(1 or more M2 or less Integer) and Ky axis direction coordinates component ky(1 or more N2 integer below) specific image-region FR (kx, ky) difference two Inverse fourier transform is tieed up into the coordinates component y (1 of coordinates component x (1 or more M1 integer below) and Y direction by X-direction The above N1 integer below) complex amplitude F (x, y) obtained from unit structure region R (x, y) on specific X-Y plane with j is Imaginary unit and assigned by formula below (6).In addition, complex amplitude F (x, y) is enabling term amplitude be A (x, y) and enable phase When item is P (x, y), provided by formula below (7).Further more, as the 4th precondition, unit structure region R (x, y) by with X-axis Parallel respectively and lattice-site O (x, y) at the center as unit structure region R (x, y) orthogonal s axis and t axle gauge with Y-axis It is fixed.
[numerical expression 6]
[numerical expression 7]
F (x, y)=A (x, y) × exp [jP (x, y)] ... (7)
Under above-mentioned 1st~the 4th precondition, the configuration pattern in the different refractivity region of phase-modulation layer passes through rotation Mode or axis shift-up mode determine.Specifically, in the decision of the configuration pattern of rotation mode, in unit structure region R In (x, y), so that connection lattice-site O (x, y) was formed with the line segment of the center of gravity G1 in corresponding different refractivity region and s axis Angle φ (x, y) satisfaction becomes
φ (x, y)=C × P (x, y)+B
C: for proportionality constant, such as 180 °/π
B: for arbitrary constant, such as 0 mode of relationship configures the corresponding different refractivity region.
In the semiconductor light-emitting elements with structure as described above, preferably in phase-modulation layer, composition is imaginary just The center (lattice-site) of the constituent parts structural region of prismatic crystal lattice and the center of gravity G1 distance r in corresponding different refractivity region are spread Phase-modulation layer generally fixed value (in addition, however not excluded that distance r is partly different).As a result, in the phase of phase-modulation layer entirety Bit distribution (distribution for being assigned to the phase term P (x, y) of the complex amplitude F (x, y) of unit structure region R (x, y)) is equally divided In the case where being distributed in 0~2 π (rad), if average, the center of gravity in different refractivity region and the unit structure area of tetragonal The lattice-site of domain R is consistent.Therefore, the Two dimensional Distribution bragg diffraction effect of above-mentioned phase-modulation layer is close in tetragonal The Two dimensional Distribution bragg diffraction effect in the case where different refractivity region is configured on each lattice-site, therefore easy to form is stayed Wave can expect that the threshold current for oscillation reduces.
(5) on the other hand, in the decision of the configuration pattern of axis shift-up mode, under above-mentioned 1st~the 4th precondition, In unit structure region R (x, y), by lattice-site O (x, y), corresponding different refractions are configured from the inclined straight line of s axis The center of gravity G1 in rate region.At this point, so that until lattice-site O (x, y) to the center of gravity G1 in the corresponding different refractivity region Line segment length r (x, y) meets
R (x, y)=C × (P (x, y)-P0)
C: proportionality constant
P0: for arbitrary constant, for example, 0 relationship mode, this is corresponding not for configuration in unit structure region R (x, y) Same refractive index area.In addition, the configuration pattern in the different refractivity region of phase-modulation layer is determined by axis shift-up mode In the case where, it can also obtain effect identical with above-mentioned rotation mode.
(6) as a mode of present embodiment, preferably in multiple half comprising the 1st and the 2nd semiconductor light-emitting elements In at least one semiconductor light-emitting elements in conductor light-emitting component, the whole of multiple and different refractive index areas of phase-modulation layer In, the shape being prescribed on an x-y plane, the area being prescribed on an x-y plane and the distance r being prescribed on an x-y plane In at least certain one it is consistent.It herein, further include constituting 1 different folding in above-mentioned " shape being prescribed on an x-y plane " Penetrate the combined shaped of multiple elements in rate region (referring to Figure 25 (h)~Figure 25 (k)).Thereby, it is possible to inhibit light beam projecting region The generation of interior noise light and 0 light as noise.In addition, 0 light is the light exported in parallel with Z-direction, refer to The light that phase-modulation layer is not phase-modulated.
(7) as a mode of present embodiment, the shape on the X-Y plane of preferably multiple and different refractive index areas is Positive round, square, regular hexagon, octagon, positive ten hexagon, equilateral triangle, isosceles right triangle, rectangle, ellipse, 2 circles or it is elliptical a part overlapping shape, ovum type shape, tear-drop type shape, isosceles triangle, arrowhead-shaped shape, it is trapezoidal, Any shape in the shape of a part overlapping of pentagon and 2 rectangles.In addition, ovum type shape such as Figure 22 (h) and Figure 38 (d) Shown is by so that the size along the short-axis direction near an end of its long axis is less than near another end The mode of the size of the short-axis direction is by shape obtained from ovalizing deflection.Shown in tear-drop type shape such as Figure 22 (d) and Figure 38 (e) Be as by along an elliptical Leading Edge Deformation for its long axis at shape obtained from along the end of long axis direction point outstanding. Be shown in arrowhead-shaped shape such as Figure 22 (e) and Figure 38 (g) one of rectangle while constitute the notch of triangle and when with this Opposite side constitutes the shape of the protrusion of triangle.
Shape on the X-Y plane of multiple and different refractive index areas becomes positive round, square, regular hexagon, positive eight side In the case where shape, positive ten hexagon, rectangle and elliptical any shape, that is, the shape of variant refractive index area becomes mirror In the case where as symmetrical (line is symmetrical), in phase-modulation layer, can accurately it set from the more of the imaginary tetragonal of composition The direction of center of gravity G1 of from a respective lattice-site O of unit structure region R to corresponding each different refractivity region and flat with X-axis The angle φ that capable s axis is formed.In addition, the shape on the X-Y plane of multiple and different refractive index areas is equilateral triangle, isosceles Shape, the ovum type shape, tear-drop type shape, arrow that right angled triangle, isosceles triangle, 2 circles or elliptical a part are overlapped Type shape, trapezoidal, pentagon, 2 rectangles a part overlapping shape any shape in the case where, that is, do not having In the case where 180 ° of rotational symmetry, higher light output can be obtained.
(8) it as a mode of present embodiment, can also partly be led at least one in multiple semiconductor light-emitting elements In body light-emitting component, phase-modulation layer has interior by the M1 × N1 unit structure region R inside region constituted and to surround this The lateral area that the mode of the periphery of side region is arranged.In addition, lateral area include with by the imaginary tetragonal Periphery set identical with imaginary tetragonal lattice structure and the defined lattice-site amplified in tetragonal weighs respectively Periphery lattice-site different refractivity regions that folded mode configures, multiple.In this case, it is able to suppress along X-Y plane Light leakage reduces oscillation threshold current.
(9) it as a mode of present embodiment, can also partly be led at least one in multiple semiconductor light-emitting elements In body light-emitting component, phase-modulation floor has the multiple other different refractivity areas different from multiple and different refractive index areas Domain, i.e. multiple lattice-site different refractivities region.Multiple and different refractive index areas are arranged respectively at M1 × N1 unit structure area Domain R is configured in such a way that respective center of gravity G2 is consistent with the lattice-site O of corresponding unit structure region R.In this case, Do not have 180 ° of rotation as a whole by the combined shaped that different refractivity region and lattice-site different refractivity region are constituted Symmetry.Therefore higher light output is obtained.
More than, remaining can be respectively applied to by being somebody's turn to do each mode enumerated in [explanation of the embodiment of the present application] column All combinations of all modes or remaining mode.
[details of the embodiment of the present application]
Hereinafter, being carried out referring to attached drawing to the light emitting semiconductor module of present embodiment and its specific structure of control method It is described in detail.In addition, the present invention is not limited to these illustrations, it is intended to encompass be represented by claim and be equal with claim Meaning and scope in had altered.In addition, marking identical symbol in the explanation of attached drawing to identical element, omitting weight Multiple explanation.
(the 1st embodiment)
Referring to Fig.1~Fig. 3 illustrates the structure of the light emitting semiconductor module 1 of the 1st embodiment.Fig. 1 is from semiconductor light emitting The figure when light emitting semiconductor module 1 of the 1st embodiment is seen in 1st surface side of element.Fig. 2 is in terms of the 4th surface side of supporting substrates Figure when light emitting semiconductor module 1.Fig. 3 is section along Fig. 1 and III-III line shown in Fig. 2, light emitting semiconductor module 1 Face figure.
Such as FIG. 1 to FIG. 3 as indicated, light emitting semiconductor module 1 includes a pair of semiconductor light-emitting elements 100-1,100-2 and branch Hold substrate 11.Semiconductor light-emitting elements 100-1,100-2 can also be respectively provided with layer structure identical with Fig. 2 of patent document 1, But it is not absolutely required to be same layer structure.Semiconductor light-emitting elements 100-1,100-2 are respectively provided with the 1st face 100- 1a, 100-2a and the 2nd face 100-1b, 100-2b, from the 1st face 100-1a, 100-2a output light.Supporting substrates 11 have the 3rd face 11a and the 4th face 11b and there are a pair of of driving electrodes 11-1,11-2 of the configuration on the 3rd face, it can be via a pair of driving electricity Pole 11-1,11-2 load a pair of of semiconductor light-emitting elements 100-1,100-2.Semiconductor light-emitting elements 100-1,100-2 have respectively Active layer 103-1,103-2, it is wrapped with phase-modulation layer 104-1,104-2 of active layer 103-1,103-2 optical bond, the 1st Coating 102-1,102-2, the 2nd clad 106-1,106-2, the 2nd surface side electrode 108-1,108-2 and the 1st surface side electrode 110- 1,110-2.In addition, laminate structure includes at least active layer 103-1 and phase-modulation layer in semiconductor light-emitting elements 100-1 104-1.On the other hand, in semiconductor light-emitting elements 100-2, laminate structure includes at least active layer 103-2 and phase-modulation Layer 104-2.The structure of laminate structure is same in embodiment disclosed below.
The 2nd surface side electrode 108-1,108-2 and corresponding driving electrodes 11- of semiconductor light-emitting elements 100-1,100-2 1,11-2 is separately connected.Phase-modulation layer 104-1,104-2 separately include fundamental region 104-1a with the 1st refractive index, 104-2a and multiple and different refractive index area 104-1b, 104-2b with 2nd refractive index different from the 1st refractive index.It is multiple Different refractivity region 104-1b, 104-2b is located at and the imagination in fundamental region 104-1a, 104-2a according to respective center of gravity Tetragonal each lattice-site separate as defined in distance r place as configure pattern, be arranged respectively at fundamental region In 104-1a, 104-2a.Pattern is configured so that from the 1st when supplying driving current from corresponding driving electrodes 11-1,11-2 Light that the light of face 100-1a, 100-2a output shows, light beam projecting pattern and the drop shadow spread as the light beam projecting pattern Beam view field distinguishes consistent mode with target beam projection pattern and target beam view field and sets.
In addition, being provided in any light emitting semiconductor module of the light emitting semiconductor module of the 1st~the 4th embodiment following At least any structure in 1st~the 3rd structure.That is, in the 1st structure, contain in the light emitting semiconductor module multiple half At least one semiconductor light-emitting elements (the 1st semiconductor light-emitting elements) in conductor light-emitting component and with the 1st semiconductor light emitting element Between the other semiconductor light-emitting elements of the different at least one of part (the 2nd semiconductor light-emitting elements), each target beam projected area Domain is substantially consistent.That is, light beam projecting direction is different between the 1st and the 2nd semiconductor light-emitting elements.In the 2nd structure, the 1st half The target beam projection pattern of conductor light-emitting component and the target beam projection pattern of the 2nd semiconductor light-emitting elements are different from each other. In the 3rd structure, the emission wavelength of the emission wavelength and the 2nd semiconductor light-emitting elements of the 1st semiconductor light-emitting elements is different from each other.
In addition, " light beam projecting region " so-called in this specification refer to when supplying driving current from 1 driving electrodes from The drop shadow spread of the light of light emitting semiconductor module output, " light beam projecting pattern " refers to the perspective view of the light in above-mentioned drop shadow spread Case (the strong and weak pattern of light).
In the present embodiment, in the case where 1 structure, semiconductor light-emitting elements (the 1st semiconductor light-emitting elements) The target beam view field of 100-1 and the target beam of semiconductor light-emitting elements (the 2nd semiconductor light-emitting elements) 100-2 project Region is identical.In this configuration, the target beam projection pattern of semiconductor light-emitting elements 100-1 and semiconductor light-emitting elements 100- 2 target beam projection pattern both can be the same or different.In addition, the emission wavelength of semiconductor light-emitting elements 100-1 with The emission wavelength of semiconductor light-emitting elements 100-2 also both can be the same or different.In the case where 2 structure, semiconductor The target beam projection pattern of light-emitting component 100-1 and the target beam projection pattern of semiconductor light-emitting elements 100-2 are different.? In the structure, the target beam view field of semiconductor light-emitting elements 100-1 and the target beam of semiconductor light-emitting elements 100-2 View field both can be the same or different.In addition, the emission wavelength and semiconductor light emitting element of semiconductor light-emitting elements 100-1 The emission wavelength of part 100-2 also both can be the same or different.In the case where 3 structure, semiconductor light-emitting elements 100-1 Target beam projection pattern and target beam view field and semiconductor light-emitting elements 100-2 target beam projection pattern and Target beam view field both can be the same or different.In any structure, the emission wavelength of semiconductor light-emitting elements is equal It can be carried out by the lattice constant of imaginary tetragonal etc. in the material of active layer and the fundamental region of phase-modulation layer It adjusts.
As shown in figures 1 and 3, the 1st surface side electrode 110-1,110-2 is respectively provided with for the opening to central portion emergent light Portion 110-1a, 110-2a.1st surface side electrode 110-1,110-2 respectively can also substitute the electrode with opening portion and be transparent Electrode.
The upper and lower relation of active layer 103-1,103-2 and phase-modulation layer 104-1,104-2 can also with it is shown in Fig. 3 on Lower relationship is opposite.In addition, semiconductor light-emitting elements 100-1,100-2 also record substrate layer 101-1,101- respectively in Fig. 3 2, upper light guide layer 105b-1,105b-2, lower part photoconductive layer 105a-1,105a-2, contact layer 107-1,107-2, insulating layer 109-1,109-2, antireflection layer 111-1,111-2.But semiconductor light-emitting elements 100-1,100-2 it is not absolutely required to Have them.
Constituent material, shape, size, the manufacturing method etc. of each layer, each region for the above-described, those skilled in the art Member can the contents based on patent document 1 suitably select, part thereof of example illustrated below.That is, each layer shown in Fig. 3 Material and structure an example it is as described below.Substrate layer 101-1,101-2 are made of GaAs, the 1st clad 102-1,102-2 It is made of AlGaAs.Active layer 103-1,103-2 have multi-quantum pit structure MQW.In phase-modulation layer 104-1,104-2, base 104-1a, 104-2a are made of GaAs for one's respective area, multiple and different refractive index areas in embedment fundamental region 104-1a, 104-2a 104-1b, 104-2b are made of AlGaAs.Upper light guide layer 105b-1,105b-2 and lower part photoconductive layer 105a-1,105a-2 by AlGaAs is constituted.2nd clad 106-1,106-2 is made of AlGaAs.Contact layer 107-1,107-2 are made of GaAs.Insulation Layer 109-1,109-2 are by SiO2Or silicon nitride is constituted.Antireflection layer 111-1,111-2 are by silicon nitride (SiN), silica (SiO2) etc. dielectrics monofilm or multilayer dielectric film constitute.Multiple and different refractive index area 104-1b, 104-2b can also To be respectively the hole for being enclosed argon, nitrogen or air etc..
In addition, in the case where the light emitting semiconductor module 1 has any structure of the 1st and the 2nd structure, preferred active layer The multi-quantum pit structure MQW of 103-1,103-2 include barrier layer: AlGaAs/ well layer: the structure of InGaAs.In addition, partly leading at this In the case that body light emitting module 1 has the 3rd structure, the preferably multi-quantum pit structure MQW of active layer 103-1,103-2 includes potential barrier Layer: AlGaAs/ well layer: InGaAs, barrier layer: GaInAsP/ well layer: GaInAsP, barrier layer: InGaN/ well layer: InGaN, gesture Barrier layer: AlGaInP/ well layer: the structures such as GaInP.
As an example, the miscellaneous of N-type is added in substrate layer 101-1,101-2 and the 1st clad 102-1,102-2 Matter.The impurity of p-type is added in the 2nd clad 106-1,106-2 and contact layer 107-1,107-2.In addition, the 1st clad The band gap of 102-1,102-2 and the 2nd clad 106-1,106-2 are greater than upper light guide layer 105b-1,105b-2 and lower part light The band gap of conducting shell 105a-1,105a-2.In addition, setting upper light guide layer 105b-1,105b-2 and lower part photoconductive layer 105a-1, The band gap of multi-quantum pit structure MQW of the band gap of 105a-2 greater than active layer 103-1,103-2.
Then, referring to Fig. 4 and Fig. 5, illustrate the configuration pattern of multiple and different refractive index areas of each phase-modulation layer.Fig. 4 It is the schematic diagram for illustrating the configuration pattern in the different refractivity region of phase-modulation layer, Fig. 5 is for illustrating different refractions The figure of the positional relationship of lattice-site in the center of gravity in rate region and imaginary tetragonal.In Fig. 4, different refractivity region is only Diagram 12, but actually it is provided with a large amount of different refractivity region.It is provided with 704 × 704 differences in one example Refractive index area.In addition, configuration pattern described herein as is not distinctive configuration pattern in the 1st embodiment, the following the 2nd The configuration pattern of~the 4 embodiment is also identical.Therefore, in Fig. 4, phase-modulation layer, fundamental region and more will be respectively indicated The symbol in a different refractivity region generalizes, and indicates phase-modulation layer with n04-m, indicates fundamental region with n04-ma, with N04-mb indicates multiple and different refractive index areas.Wherein, " n " is that (the 1st embodiment is for distinguishing the number of embodiment " 1 ", the 2nd embodiment are " 2 " ... ...), m is for distinguishing the semiconductor light-emitting elements for constituting 1 light emitting semiconductor module Number, " n " and " m " is with 1 or more integer representation.
Such as Fig. 4 as indicated, phase-modulation layer n04-m include the 1st refractive index fundamental region n04-ma and with the 1st refractive index The different refractivity region n04-mb of the 2nd different refractive index is prescribed on an x-y plane in phase-modulation layer n04-m setting Imaginary tetragonal.In addition, Fig. 4 is the configuration pattern (rotation for illustrating the different refractivity region of phase-modulation layer Mode) schematic diagram.One side of tetragonal is parallel with X-axis, another side is parallel with Y-axis.At this point, with the crystalline substance of tetragonal The unit structure region R of square centered on lattice point O can spread multiple column along X-axis and multiple rows two along Y-axis The setting of dimension ground.Multiple and different refractive index area n04-mb are respectively arranged 1 in constituent parts structural region R.Different refractivity region The flat shape of n04-mb is, for example, circle.In constituent parts structural region R, the center of gravity G1 of different refractivity region n04-mb and Nearest lattice-site O is discretely configured therewith.Specifically, X-Y plane be with semiconductor light-emitting elements 100-1 shown in Fig. 3, The orthogonal plane of the respective thickness direction of 100-2 (Z axis), with the phase-modulation layer n04- comprising different refractivity region n04-mb A face of m is consistent.Constitute tetragonal unit structure region R respectively by the coordinates component x of X-direction (1 or more it is whole Number) and the coordinates component y (1 or more integer) of Y direction it is specific, as unit structure region R (x, y) expression.At this point, unit The center of structural region R (x, y), i.e. lattice-site are indicated with O (x, y).In addition, lattice-site O can both be located at different refractivity area The outside of domain n04-mb also may be embodied in the inside of different refractivity region n04-mb.In addition, different refractivity region n04- The ratio area S of mb shared in 1 unit structure region R is known as fill factor (FF).In season between the lattice of tetragonal When being divided into a, the fill factor FF of different refractivity region n04-mb is as S/a2To assign.S is the different refractivity of X-Y plane The area of region n04-mb uses the straight of positive round in the case that the shape of n04-mb is, for example, positive round in different refractivity region Diameter D and as S=π (D/2)2To assign.In addition, in the case where the shape of different refractivity region n04-mb is square, Use the length LA on a side of square and as S=LA2To assign.
In Fig. 4, the center of the X-direction of unit structure region R is indicated with the dotted line that x1~x4 is indicated, with y1~ The dotted line that y3 is indicated indicates the center of the Y direction of unit structure region R.Therefore, dotted line x1~x4 and dotted line y1~y3 Each intersection point indicate the respective center O (1,1) of unit structure region R (1,1)~R (3,4)~O (3,4), i.e. lattice-site.The vacation The lattice constant for the tetragonal thought is a.In addition, lattice constant a is adjusted according to emission wavelength.
The configuration pattern of above-mentioned different refractivity region n04-mb according to target beam view field and light beam projecting pattern, It is determined using the method illustrated in patent document 1.That is, by according to target beam view field and target beam perspective view The corresponding original pattern of case carries out phase decision obtained from inverse fourier transform for the center of gravity of variant refractive index area n04-mb Each lattice-site (intersection point of dotted line x1~x4 and dotted line y1~y3) of the G1 from the imaginary tetragonal in the n04-ma of fundamental region The direction of deviation determines above-mentioned configuration pattern.About the distance r (referring to Fig. 5) deviateed from each lattice-site, preferably such as patent document As being recorded in 1, the range for being 0 < r≤0.3a when the lattice constant for enabling tetragonal is a.Deviate from each lattice-site O Distance r is usually identical in all phase-modulation layers, all different refractivity regions, but can also enable a part of phase-modulation layer Distance r is the value different with other phase-modulation layer distance r, can also enable the distance r in a part of different refractivity region be The different value with other different refractivity region distance r.In addition, Fig. 5 is the configuration for illustrating to determine by rotation mode The figure of one example of pattern (rotation mode) indicates the structure of unit structure region R (x, y), from lattice-site to not in Fig. 5 Distance r with refractive index area n04-mb is indicated with r (x, y).
As shown in figure 5, constituting the unit structure region R (x, y) of tetragonal by the s mutually orthogonal in lattice-site O (x, y) Axis and t axis convention.In addition, s axis is the axis parallel with X-axis, it is corresponding with dotted line x1~x4 shown in Fig. 4.T axis is flat with Y-axis Capable axis, it is corresponding with dotted line y1~y3 shown in Fig. 4.In the s-t plane for being specified that unit structure region R (x, y), from crystalline substance The angle that the direction of lattice point O (x, y) Xiang Chongxin G1 and s axis are formed is φ (x, y).Rotating the case where angle φ (x, y) is 0 ° Under, connection lattice-site O (x, y) is consistent with the positive direction of s axis with the direction of the vector of center of gravity G1.In addition, connection lattice-site O (x, Y) (being equivalent to distance r) is r (x, y) with the length of the vector of center of gravity G1.
As shown in figure 4, in phase-modulation layer n04-m, the lattice-site O of the center of gravity G1 of different refractivity region n04-mb (x, Y) the rotation angle φ (x, y) around is independently set according to target beam projection pattern (light image) by per unit structural region R. Rotating angle φ (x, y) has specific value in unit structure region R (x, y), but is not necessarily limited to specific function table Show.That is, rotating angle φ (x, y) from the fixation transformed to target beam projection pattern on wave number space, to the wave number space Wave-number range carry out two dimensional inverse fourier transform obtained from complex amplitude phase term determine.In addition, being thrown from target beam When shadow pattern seeks COMPLEX AMPLITUDE (the respective complex amplitude of unit structure region R), by with hologram generate calculating when Iterative algorithm as Gerchberg-Saxton (GS) method (Phase Retrieve Algorithm) generally used improves target beam projection The reproducibility of pattern.
Fig. 6 is the target beam projection pattern (light for illustrating to export from semiconductor light-emitting elements 100-1,100-2 respectively Picture) figure with the relationship of the distribution of the rotation angle φ (x, y) of phase-modulation layer n04-m.Specifically, considering that target will be used as The target beam view field of the drop shadow spread of light beam projecting pattern (is shown with the coordinate (x, y, z) in XYZ rectangular coordinate system The setting face of light image in design) transform on wave number space obtained from Kx-Ky plane.Provide the Kx axis of the Kx-Ky plane It is mutually orthogonal with Ky axis, and respectively by above-mentioned formula (1)~formula (5) with by the projecting direction of target beam projection pattern from the When the normal direction (Z-direction) of 1 face 100-1a, 100-2a is rocked to the 1st face 100-1a, 100-2a relative to the normal The angle in direction is corresponding.In the Kx-Ky plane, the determination region comprising target beam projection pattern is respectively by the M2 of square A image-region FR of (1 or more integer) × N2 (1 or more integer) is constituted.In addition, the X-Y on phase-modulation layer n04-m The imaginary tetragonal set in plane is by a unit structure region R structure of M1 (1 or more integer) × N1 (1 or more integer) At.In addition, integer M2 do not need it is consistent with integer M1.Equally, Integer N 2 does not need consistent with Integer N 1 yet.At this point, will By the coordinates component k of Kx axis directionxThe coordinates component k of (1 or more M2 integer below) and Ky axis directiony(1 or more N2 is below Integer) specific, Kx-Ky plane image-region FR (kx, ky) two dimensional inverse fourier transform is distinguished into the coordinate by X-direction Coordinates component y (1 or more N1 integer below) specific unit structure of ingredient x (1 or more M1 integer below) and Y direction Region R (x, y), unit structure region R (x, y) complex amplitude F (x, y) is using j as imaginary unit shown in formula (8) below Value.
[numerical expression 8]
In addition, in unit structure region R (x, y), enabling term amplitude is A (x, y) and when to enable phase term be P (x, y), the multiple vibration Width F (x, y) is with formula below (9) regulation.
[numerical expression 9]
F (x, y)=A (x, y) × exp [jP (x, y)] ... (9)
As shown in fig. 6, unit structure region R's (x, y) answers in the range of coordinates component x=1~M1 and y=1~N1 The term amplitude of amplitude F (x, y) is that the distribution of A (x, y) is equivalent to the intensity distribution on X-Y plane.In addition, in x=1~M1, y= In the range of 1~N1, the phase term of the complex amplitude F (x, y) of unit structure region R (x, y) is that the distribution of P (x, y) is equivalent to X-Y Phase distribution in plane.As it is explained in detail hereinafter, the rotation angle φ (x, y) of unit structure region R (x, y) is obtained by P (x, y), In the range of coordinates component x=1~M1 and y=1~N1, point of the rotation angle φ (x, y) of unit structure region R (x, y) Cloth is equivalent to the rotation angular distribution on X-Y plane.
In addition, the center Q of the light beam projecting pattern in Kx-Ky plane is located at the axis vertical with the 1st face 100-1a, 100-2a On line, indicate in Fig. 6 using center Q as 4 quadrants of origin.In Fig. 6, subrepresentation is in 1st quadrant and the 3rd as an example Quadrant obtains the case where light image, but can also obtain picture in the 2nd quadrant and the 4th quadrant or All Quardrants.In this embodiment party In formula, as shown in fig. 6, obtaining the pattern about origin point symmetry.Fig. 6 as an example subrepresentation third quadrant obtain character " A ", the case where character " A " is rotated into 180 ° of pattern is obtained in 1st quadrant.In addition, in the light image (such as ten for rotational symmetry Word, circle, double-round etc.) in the case where, it is overlapped and is observed as a light image.
From semiconductor light-emitting elements 100-1,100-2 export light beam projecting pattern (light image) become with by luminous point, by 3 points Luminous point group, straight line, cross, stick figure, lattice pattern, photo, candy strip, CG (computer graphical) and the word constituted above The corresponding light image of light image (original image) at least one kind of design shown in symbol.Herein, in order to obtain target beam perspective view Case determines the rotation angle φ (x, y) of the different refractivity region n04-mb of unit structure region R (x, y) in the following order.
In unit structure region R (x, y), as described above, with the center of gravity G1 and lattice of different refractivity region n04-mb The state of point O (x, y) separation distance r (value of r (x, y)) configures.At this point, in unit structure region R (x, y), so that rotation The mode that gyration φ (x, y) meets relationship below configures different refractivity region n04-mb.
φ (x, y)=C × P (x, y)+B
C: for proportionality constant, such as 180 °/π
B: for arbitrary constant, such as 0
In addition, proportionality constant C and arbitrary constant B is identical value relative to all unit structure region R.
That is, in the case where target beam projection pattern to be obtained, it will be in the Kx-Ky plane being projected on wave number space The pattern two dimensional inverse fourier transform of formation at the unit structure region R (x, y) on the X-Y plane on phase-modulation layer n04-m, The corresponding rotation angle φ (x, y) with the phase term P (x, y) of its complex amplitude F (x, y) is enabled to assign configuration in the unit structure region Different refractivity region n04-mb in R (x, y).In addition, the far-field pattern after the two dimensional inverse fourier transform of laser beam As single or multiple light spot form, annulus shape, rectilinear form, character shape, double annulus shape or Laguerre can be taken The various shapes such as Gaussian beam shape.In addition, because target beam projection pattern is indicated with the wavenumber information on wave number space (in Kx-Ky plane), so being the feelings of bitmap images indicated with two-dimensional location information etc. in the target beam projection pattern Under condition, two dimensional inverse fourier transform is carried out after being temporarily transformed to wavenumber information.
As from COMPLEX AMPLITUDE being obtained by two dimensional inverse fourier transform, on X-Y plane obtain intensity distribution and The method of phase distribution, such as about intensity distribution (distribution of the term amplitude A (x, y) on X-Y plane), can be by using The abs function of the numeric value analysis software " MATLAB " of MathWorks company is calculated, about phase distribution (on X-Y plane The distribution of phase term P (x, y)), it can be calculated by using the angle function of MATLAB.
It, can be respectively from partly leading as described above, if can determine the configuration pattern of different refractivity region n04-mb The 1st face 100-1a, 100-2a of body light-emitting component 100-1,100-2 export target beam perspective view to target beam view field The light of case.Target beam projection pattern can arbitrarily be determined by designer, can be luminous point, the luminous point constituted by 3 points or more Group, straight line, stick figure, cross, figure, photo, CG (computer graphical), character etc..In the X-Y plane of each phase-modulation layer It is interior, all different refractivity region n04-mb figure, identical area and/or identical distance r having the same.In addition, more A different refractivity region n04-mb can also be by the combination of translation or translation and rotation process, can be overlapped Mode formed.In this case, the production of the noise light and 0 light as noise that are able to suppress in light beam projecting region It is raw.0 light is the light exported in parallel to Z-direction herein, refers to the light not being phase-modulated in phase-modulation layer n04-m.
Herein, Fig. 7 indicate target beam projection pattern and to corresponding original pattern carry out inverse fourier transform and One example of the obtained phase distribution in COMPLEX AMPLITUDE.When Fig. 7 (a) indicates to supply driving current from driving electrodes 11-1 One example of obtained target beam projection pattern, what Fig. 7 (b) expression obtained when supplying driving current from driving electrodes 11-2 One example of target beam projection pattern.Fig. 7 (c) and Fig. 7 (d), which is respectively indicated, to be thrown with each light beam of Fig. 7 (a) and Fig. 7 (b) The corresponding original pattern of shadow pattern carries out the phase distribution in COMPLEX AMPLITUDE obtained from inverse fourier transform.Fig. 7 (c) and Fig. 7 (d) it is made of 704 × 704 elements, passes through the distribution of the angle of 0~2 π of deep or light expression of color.Color is the part of black Indicate angle 0.
Then, referring to Fig. 8, the light emitting device for having light emitting semiconductor module 1 is illustrated.Fig. 8 is to indicate have half The block diagram of the structure of the light emitting device of conductor light emitting module 1.As shown in figure 8, light emitting device 140 include light emitting semiconductor module 1, Power circuit 141, control signal input circuit 142 and driving circuit 143.Power circuit 141 is to driving circuit 143 and semiconductor Light emitting module 1 supplies power supply.Control signal input circuit 142 will be transmitted from the control signal of light emitting device 140 externally supplied To driving circuit 143.Driving circuit 143 supplies driving current to light emitting semiconductor module 1.Driving circuit 143 and semiconductor are sent out 2 driving line 144-1, the 144-2 and 2 common potential line 145-1,145-2 connections of optical module 1 by supply driving current. Driving line 144-1,144-2 and driving electrodes 11-1,11-2 are separately connected.Common potential line 145-1,145-2 and the 1st surface side electricity 110-1,110-2 are separately connected for pole.In addition, in fig. 8, the light emitting semiconductor module 1 that is indicated on driving circuit 143 and The light emitting semiconductor module 1 indicated under driving circuit 143 respectively indicates the semiconductor light emitting element of 1 light emitting semiconductor module 1 The side part 100-1,100-2 (the 1st surface side) and 11 side of supporting substrates (the 4th surface side).In fig. 8,2 common potential line 145-1, 145-2 is separately connected with the 1st surface side electrode 110-1,110-2.But it is also possible to be not provided with 2 common potential lines and be arranged 1 Common potential line, which connect with any electrode of the 1st surface side electrode 110-1,110-2, and the 1st surface side Electrode 110-1,110-2 are connected with each other by other connecting lines.
Depending on the application, driving line 144-1,144-2 can both select a driving, can also drive simultaneously.In addition, driving circuit 143 seperated with light emitting semiconductor module 1 can both be constituted, can also be on the supporting substrates 11 of light emitting semiconductor module 1 integrally Ground is formed.
The light emitting device 140 for having the light emitting semiconductor module 1 of above such structure controls (this embodiment party as described below The control method of formula).That is, in the control method, when as driven object selection 1 or 1 or more semiconductor light-emitting elements When, the control pattern individually set according to the semiconductor light-emitting elements for being respectively relative to the selection, by driving circuit 143, Individually control the movement of each selected semiconductor light-emitting elements.In addition, control pattern is sent out comprising selected semiconductor The respective information that driving opportunity and driving time are at least defined along time shaft of optical element.
Specifically, from driving circuit 143 to driving line 144-1,144-2 any one line use together equipotential line 145-1, Driving current is supplied between 145-2.Half connect through driving electrodes with the driving line for being supplied to driving current in the 2nd surface side electrode In conductor light-emitting component, the compound of electronics and hole occurs in active layer, the active layer of the semiconductor light-emitting elements shines.Because being somebody's turn to do Light obtained from shining effectively is enclosed by the 1st clad 102-1,102-2 and the 2nd clad 106-1,106-2.From active layer The light of 103-1,103-2 outgoing is incident on the inside of corresponding phase-modulation layer, because the two-dimensional feedback of phase-modulation layer causes Enclosed effect and form defined mode.By injecting enough electrons and holes in active layer, it is incident on phase-modulation layer Light with defined mode oscillation.The light of oscillation mode as defined in being formed is corresponding by the configuration pattern to different refractivity region Phase-modulation, by the light after phase-modulation as showing with the light of the corresponding light beam projecting pattern of configuration pattern from the 1st face Lateral electrode laterally outside (light beam projecting region) outgoing.
(the 1st structure of the 1st embodiment)
In the present embodiment, in the case where using the 1st structure, target beam view field semiconductor in office shines first (the respective light beam projecting direction semiconductor light-emitting elements 100-1,100-2 is different) are all similarly set in part 100-1,100-2. In such 1st structure, the application examples for being able to carry out the semiconductor light-emitting elements recorded in patent document 1 (is swept object Retouch the application examples of laser beam) other than various applications.For example, according to the present embodiment, (first) is able to carry out to by 2 patterns The various display devices of the type of display are switched in the same area of screen application, (second) are to STED (Stimulated Emission Depletion (stimulated emission depletion)) application of light source of microscope, (third) to at one accomplished continuously or intermittently Ground irradiates the application of the various illuminations of the type of the light of identical patterns, (fourth) to by continuously to irradiation identical patterns at one Pulsed light and wear the application of the laser processing of the type in the hole of target pattern in object.
The example of application (first) as the 1st structure, has " OFF " character pattern shown in Fig. 7 (a) and Fig. 7 (b) institute " ON " character pattern shown is answered being switched over and shown in the same position of screen by the instruction of user or opportunity appropriate With.At this point, the luminescent color of semiconductor light-emitting elements 100-1,100-2 can also be mutually different color.Thus, for example also Red display OFF can be used, shows ON with blue.
The example of application (second) as the 1st structure, for example, the emission wavelength by enabling semiconductor light-emitting elements 100-1 It is the emission wavelength and projection pattern for being suitable for the exciting light of STED microscope with light beam projecting pattern, enables semiconductor light emitting element The emission wavelength and light beam projecting pattern of part 100-2 are emission wavelength and the throwing of the stimulated light emission for being suitable for STED microscope Shadow pattern can use light emitting semiconductor module 1 as the light source of STED microscope.Make by light emitting semiconductor module 1 In the case where light source use for STED microscope, additionally it is possible to utilize current mirror, polygonal mirror, MEMS (Micro Electro Mechanical Systems (MEMS)) carry out test point scanning.
The example of application (third) as the 1st structure, has following application: not by semiconductor light-emitting elements 100-1 With the configuration of the different refractivity region 104-2b of the configuration pattern and semiconductor light-emitting elements 100-2 of refractive index area 104-1b Can obtain, identical light beam projecting region, (light beam projecting pattern for example takes identical light beam projecting pattern pattern both sides The entirety in light beam projecting region or a part have the light beam projecting pattern of uniform brightness) mode preset, then, Driving current is supplied from driving electrodes 11-1,11-2 both sides in the case where needing bright illumination, it is enough in dim illumination In the case where only from any one electrode of driving electrodes 11-1,11-2 supply driving current.
The example of application (fourth) as the 1st structure, has following application: not by semiconductor light-emitting elements 100-1 With the configuration of the different refractivity region 104-2b of the configuration pattern and semiconductor light-emitting elements 100-2 of refractive index area 104-1b Pattern both sides with can obtain same light beam view field same light beam projection pattern (light beam projecting region with to wear it is processed The position in the hole of object aligns, and light beam projecting pattern is set as the pattern of the shape in the hole to be worn) mode preset.Then, From driving electrodes 11-1,11-2, both sides are alternately supply pulse current.In this case, between the pulse that each element can be made Every length, therefore higher peak output can be obtained from each element, can obtain bigger output.
(the 2nd structure of the 1st embodiment)
In the present embodiment, in the case where using the 2nd structure, the target beam of semiconductor light-emitting elements 100-1 is projected Pattern is set as the light beam projecting pattern different from the target beam projection pattern of semiconductor light-emitting elements 100-2.Such In 2nd structure, the application examples for the semiconductor light-emitting elements recorded in patent document 1 is able to carry out (to object scanning laser light The application examples of beam) other than various applications.For example, being able to carry out following such application.That is, according to the present embodiment, it can It carries out (first) and switches over each of the type of display in the same area of screen or mutually different 2 regions to by 2 patterns The application of kind display device, (second) are micro- to STED (Stimulated Emission Depletion (stimulated emission depletion)) The application of the light source of mirror.
The example of application (first) as the 2nd structure, has " OFF " character pattern shown in Fig. 7 (a) and Fig. 7 (b) institute " ON " character pattern shown by user instruction or opportunity appropriate the same position of screen or mutually different 2 positions into The such application of row switching display.At this point, the luminescent color of semiconductor light-emitting elements 100-1,100-2 can also be mutually different Color.Thus, for example can also enough red display OFF, with blue show ON.
The example of application (second) as the 2nd structure, for example, the emission wavelength by enabling semiconductor light-emitting elements 100-1 It is the emission wavelength and projection pattern for being suitable for the exciting light of STED microscope with light beam projecting pattern, enables semiconductor light emitting element The emission wavelength and light beam projecting pattern of part 100-2 are emission wavelength and the throwing of the stimulated light emission for being suitable for STED microscope Shadow pattern can use light emitting semiconductor module 1 as the light source of STED microscope.Make by light emitting semiconductor module 1 In the case where light source use for STED microscope, additionally it is possible to utilize current mirror, polygonal mirror, MEMS (Micro Electro Mechanical Systems (MEMS)) carry out test point scanning.
(the 3rd structure of the 1st embodiment)
In the present embodiment, in the case where using the 3rd structure, the emission wavelength of semiconductor light-emitting elements 100-1 and half The emission wavelength of conductor light-emitting component 100-2 is mutually different.In such 3rd structure, it is able to carry out in patent document 1 and records Semiconductor light-emitting elements application examples (to the application examples of object scanning laser light beam) other than various applications.For example, energy It is enough to carry out following such application.That is, according to the present embodiment, being able to carry out (first) and shielding to by 2 different patterns of color The same area or mutually different 2 regions of curtain switch over the application of various display devices of the type of display, (second) to The application of the light source of STED (StimulatedEmissionDepletion) microscope, (third) are to continuously or intermittently to one The application of place's irradiation identical patterns and the various illuminations of the type of the different multiple light of color.
The example of application (a) as the 3rd structure, has " OFF " character pattern shown in Fig. 7 (a) and Fig. 7 (b) institute " ON " character pattern shown by user instruction or opportunity appropriate the same position of screen or mutually different 2 positions into The such application of row switching display.At this point, the luminescent color of liquid level semiconductor light-emitting elements 100-1,100-2 are mutually different, institute With for example can also enough red display OFF, with blue show ON.
The example of application (second) as the 3rd structure, for example, the emission wavelength by enabling semiconductor light-emitting elements 100-1 It is the emission wavelength and projection pattern for being suitable for the exciting light of STED microscope with light beam projecting pattern, enables semiconductor light emitting element The emission wavelength and light beam projecting pattern of part 100-2 are emission wavelength and the throwing of the stimulated light emission for being suitable for STED microscope Shadow pattern can use light emitting semiconductor module 1 as the light source of STED microscope.Make by light emitting semiconductor module 1 In the case where light source use for STED microscope, additionally it is possible to utilize current mirror, polygonal mirror, MEMS (Micro Electro Mechanical Systems (MEMS)) carry out test point scanning.
The example of application (third) as the 3rd structure, has following application: not by semiconductor light-emitting elements 100-1 With the configuration of the different refractivity region 104-2b of the configuration pattern and semiconductor light-emitting elements 100-2 of refractive index area 104-1b Pattern both sides with can obtain same light beam view field, same light beam projection pattern (light beam projecting pattern be, for example, in light beam The entirety of view field or a part have light beam projecting pattern as uniform brightness) mode preset.So Afterwards, the luminescent color of the luminescent color and semiconductor light-emitting elements 100-2 that enable semiconductor light-emitting elements 100-1 is mutually different Color enables the color and 3 grades of illumination switchings of illumination by the combination of the driving of driving electrodes 11-1,11-2.
(the 2nd embodiment)
2nd embodiment is enabled in the 1st embodiment as 2 (a pair) semiconductor light-emitting elements and of driving electrodes Several embodiments for being 3 or more, configuring their 1 dimensions are identical as the 1st embodiment in addition to the change.
Referring to Fig. 9~Figure 11, the structure of the light emitting semiconductor module 2 of the 2nd embodiment is illustrated.Fig. 9 is from half The figure when light emitting semiconductor module 2 of the 2nd embodiment is seen in 1st surface side of conductor light-emitting component.Figure 10 is from supporting substrates Figure when light emitting semiconductor module 2 is seen in 4th surface side.Figure 11 is the sectional view of the X-X line along Fig. 9 and Figure 10.Example in Fig. 9~Figure 11 Show the example for arranging 5 semiconductor light-emitting elements and 5 driving electrodes on straight line, but semiconductor light-emitting elements and driving electrodes Number may be other than 5, in addition, one-dimensional configuration can also be on curve.
As shown in Fig. 9~Figure 11, light emitting semiconductor module 2 includes multiple semiconductor light-emitting elements 200-1~200-5 and branch Hold substrate 21.Semiconductor light-emitting elements 200-1~200-5 also can have layer structure identical with Fig. 2 of patent document 1, but It is not absolutely required to be same layer structure.Semiconductor light-emitting elements 200-1~200-5 is respectively provided with the 1st face 200-1a ~200-5a and the 2nd face 200-1b~200-5b, from the 1st face 200-1a~200-5a output light.Supporting substrates 21 have the 3rd face 21a and the 4th face 21b and there are multiple driving electrodes 21-1~21-5s of the configuration on the 3rd face.In addition, 21 energy of supporting substrates Enough load multiple semiconductor light-emitting elements 200-1~200-5.Semiconductor light-emitting elements 200-1~200-5 respectively has work Property layer 203-1~203-5, with phase-modulation layer 204-1~204-5 of active layer 203-1~203-5 optical bond, the 1st cladding Layer 202-1~202-5, the 2nd clad 206-1~206-5, the 2nd surface side electrode 208-1~208-5 and the 1st surface side electrode 210- 1~210-5.In addition, the laminate structure of semiconductor light-emitting elements 200-1~200-5 at least separately include active layer 203-1~ 203-5 and phase-modulation layer 204-1~204-5.In addition, semiconductor light-emitting elements 200-1~200-5 is each in the 2nd embodiment From X-Y plane also as the 1st embodiment, in the 2nd clad 206-1~206-5 and phase modulating layer 204-1~204-5 Interface be set separately.In addition, the Z axis orthogonal with X-Y plane and the respective stacking of semiconductor light-emitting elements 200-1~200-5 Direction is consistent.
The respective 2nd surface side electrode 208-1~208-5 of semiconductor light-emitting elements 200-1~200-5 is electric with corresponding driving 21-1~21-5 at least any one electrode in pole connects.Phase-modulation layer 204-1~204-5 is separately included with the 1st refractive index Fundamental region 204-1a~204-5a and multiple and different refractive index areas with 2nd refractive index different from the 1st refractive index 204-1b~204-5b.Multiple and different refractive index area 204-1b~204-5b are located at according to respective center of gravity and fundamental region Each lattice-site of imaginary tetragonal in 204-1a~204-5a separates configuration diagram as the place of defined distance r Case configures in the 204-1a~204-5a of fundamental region.Configuration pattern is according to making with from corresponding driving electrodes 21-1~21- It the light beam projecting patterns that show of light that are exported when 5 supply driving current from the 1st face 200-1a~200-5a and is thrown as the light beam The light beam projecting region of the drop shadow spread of shadow pattern and the consistent mode of target beam projection pattern and target beam view field Setting.
In the 2nd embodiment, light emitting semiconductor module 2 also has at least any structure in the 1st~the 3rd structure. That is, in the 1st structure, at least one semiconductor in multiple semiconductor light-emitting elements for containing in the light emitting semiconductor module Light-emitting component (the 1st semiconductor light-emitting elements) and at least one other semiconductor light emittings different from the 1st semiconductor light-emitting elements Between element (the 2nd semiconductor light-emitting elements), respective target beam view field is substantially consistent.That is, the 1st and the 2nd half Between conductor light-emitting component, light beam projecting direction is different.In the 2nd structure, the target beam perspective view of the 1st semiconductor light-emitting elements Case and the target beam projection pattern of the 2nd semiconductor light-emitting elements are mutually different.In the 3rd structure, the 1st semiconductor light-emitting elements Emission wavelength and the 2nd semiconductor light-emitting elements emission wavelength it is mutually different.
In the present embodiment, in the case where 1 structure, target beam view field semiconductor light emitting component in office It is all the same in 200-1~200-5.In this configuration, the target beam projection pattern of semiconductor light-emitting elements 200-1~200-5 Both can be all identical, it can also be a part of different from other parts.In addition, the hair of semiconductor light-emitting elements 200-1~200-5 Optical wavelength both can be all identical, can also be a part of different from other parts.In the case where 2 structure, semiconductor light emitting The mesh of at least one and other at least one semiconductor light-emitting elements in the target beam projection pattern of element 200-1~200-5 It is different to mark light beam projecting pattern.In this configuration, the target beam view field of semiconductor light-emitting elements 200-1~200-5 had been both Can be all identical, it can also be a part of different from other parts.In addition, semiconductor light-emitting elements 200-1~200-5's shines Wavelength both can be all identical, can also be a part of different from other parts.In the case where 3 structure, semiconductor light emitting element The emission wavelength of at least one semiconductor light-emitting elements in part 200-1~200-5 and other at least one semiconductor light-emitting elements Emission wavelength.In this configuration, the target beam projection pattern and target beam of semiconductor light-emitting elements 200-1~200-5 View field both can be all identical, can also be a part of different from other parts.The semiconductor light-emitting elements in any structure Emission wavelength can pass through the crystalline substance of the imaginary tetragonal in the material of active layer and the fundamental region of phase-modulation layer Lattice constant etc. is adjusted.
As shown in figures 9 and 11, the 1st surface side electrode 210-1~210-5 has for the opening portion of central portion emergent light 210-1a~210-5a.1st surface side electrode 210-1~210-5 can also substitute the electrode with opening portion but transparent electrode.
The upper and lower relation of active layer 203-1~203-5 and phase-modulation layer 204-1~204-5 can also with shown in Figure 11 Upper and lower relation it is opposite.In addition, also recorded in Figure 11 substrate layer 201-1~201-5, upper light guide layer 205b-1~ 205b-5, lower part photoconductive layer 205a-1~205a-5, contact layer 207-1~207-5, insulating layer 209-1~209-5, reflection are anti- Only layer 211-1~211-5, but it is not absolutely required to have these layers by semiconductor light-emitting elements 200-1~200-5.
Constituent material, shape, size, the manufacturing method etc. of each layer, each region for the above-described, those skilled in the art Member can the contents based on patent document 1 suitably select, part thereof of example illustrated below.That is, each shown in Figure 11 The material of layer and an example of structure are as described below.Substrate layer 201-1~201-5 is made of GaAs, and the 1st clad 202-1~ 202-5 is made of AlGaAs.Active layer 203-1~203-5 has multi-quantum pit structure MQW.Phase-modulation layer 204-1~204- 5 by multiple and different refractive index areas in fundamental region 204-1a~204-5a and embedment fundamental region 204-1a~204-5a 204-1b~204-5b is constituted.Fundamental region 204-1a~204-5a is made of GaAs, multiple and different refractive index area 204-1b ~204-5b is made of AlGaAs.Upper light guide layer 205b-1~205b-5 and lower part photoconductive layer 205a-1~205a-5 by AlGaAs is constituted.2nd clad 206-1~206-5 is made of AlGaAs.Contact layer 207-1~207-5 is made of GaAs.Absolutely Edge layer 209-1~209-5 is by SiO2Or silicon nitride is constituted.Antireflection layer 211-1~211-5 is by silicon nitride (SiN), dioxy SiClx (SiO2) etc. dielectrics monofilm or multilayer dielectric film constitute.Multiple and different refractive index area 204-1b~204-5b Or the hole for being enclosed argon, nitrogen or air etc..
In addition, in the case where the light emitting semiconductor module 2 has any structure of the 1st and the 2nd structure, preferred active layer The multi-quantum pit structure MQW of 203-1~203-5 includes barrier layer: AlGaAs/ well layer: the structure of InGaAs.In addition, this half In the case that conductor light emitting module 2 has the 3rd structure, the preferably multi-quantum pit structure MQW of active layer 203-1~203-5 includes Barrier layer: AlGaAs/ well layer: InGaAs, barrier layer: GaInAsP/ well layer: GaInAsP, barrier layer: InGaN/ well layer: InGaN, barrier layer: AlGaInP/ well layer: the structures such as GaInP.
As an example, in substrate layer 201-1~201-5 and the 1st clad 202-1~202-5 added with the miscellaneous of N-type Matter.The impurity of p-type is added in the 2nd clad 206-1~206-5 and contact layer 207-1~207-5.In addition, the 1st clad The band gap of 202-1~202-5 and the 2nd clad 206-1~206-5 are greater than upper light guide layer 205b-1~205b-5 and lower part The band gap of photoconductive layer 205a-1~205a-5.Upper light guide layer 205b-1~205b-5 and lower part photoconductive layer 205a-1~ The energy band unoccupied place setting of multi-quantum pit structure MQW of the band gap of 205a-5 greater than active layer 203-1~203-5.
Herein, target beam projection pattern in present embodiment and the 3rd following embodiments is indicated in Figure 12 and Figure 13 With an example of the phase distribution carried out to corresponding original pattern in COMPLEX AMPLITUDE obtained from inverse fourier transform. Figure 12 (a)~Figure 12 (c) respectively indicates the target beam obtained when supplying driving current from driving electrodes 21-1,21-3,21-5 One example of projection pattern.Figure 12 (d)~Figure 12 (f) respectively indicate to each light beam projecting figure of Figure 12 (a)~Figure 12 (c) The corresponding original pattern of case carries out the phase distribution in COMPLEX AMPLITUDE obtained from inverse fourier transform.Figure 13 (a)~Figure 13 (c) Respectively indicate another of the target beam projection pattern obtained when supplying driving current from driving electrodes 21-1,21-3,21-5 Example.Figure 13 (d)~Figure 13 (f) is respectively indicated to original pattern corresponding with each light beam projecting pattern of Figure 13 (a)~Figure 13 (c) Carry out the phase distribution in COMPLEX AMPLITUDE obtained from inverse fourier transform.Figure 12 (d)~Figure 12 (f) and Figure 13 (d)~figure 13 (f) are made of 704 × 704 elements, pass through the distribution of the angle of 0~2 π of deep or light expression of color.Color is the portion of black Dividing indicates angle 0.
Then, referring to Fig.1 4, the light emitting device for having light emitting semiconductor module 2 is illustrated.Figure 14 is to indicate have The block diagram of the structure of the light emitting device of light emitting semiconductor module 2.As shown in figure 14, light emitting device 240 includes semiconductor light emitting mould Block 2, power circuit 241, control signal input circuit 242 and driving circuit 243.Power circuit 241 is to driving circuit 243 and partly Conductor light emitting module 2 supplies power supply.Controlling signal input circuit 242 will be from the control signal of light emitting device 240 externally supplied It is transmitted to driving circuit 243.Driving circuit 243 supplies driving current to light emitting semiconductor module 2.Driving circuit 243 with partly lead Body light emitting module 2 by supply driving current multiple driving line 244-1~244-5 and multiple common potential line 245-1~ 245-5 connection.Driving line 244-1~244-5 and driving electrodes 21-1~21-5 is separately connected.Common potential line 245-1~ 245-5 is separately connected with the 1st surface side electrode 210-1~210-5.In addition, being indicated on driving circuit 243 in Figure 14 Light emitting semiconductor module 2 and the light emitting semiconductor module 2 indicated under driving circuit 243 respectively indicate 1 semiconductor light emitting The side semiconductor light-emitting elements 200-1~200-5 (the 1st surface side) of module 2 and 21 side of supporting substrates (the 4th surface side).In Figure 14, Multiple common potential line 245-1~245-5 are separately connected with the 1st surface side electrode 210-1~210-5, more however, you can also not be arranged A common potential line and 1 common potential line is only set.In this case, it is also possible that 1 common potential line and the 1st Any one electrode of surface side electrode 210-1~210-5 connects, and it is other that the 1st surface side electrode 210-1~210-5 is passed through Connecting line is connected with each other.
Depending on the application, driving line 244-1~244-5 can both select a driving, can also drive simultaneously multiple.In addition, driving Dynamic circuit 243 seperated with light emitting semiconductor module 2 can both be constituted, can also be in the supporting substrates 21 of light emitting semiconductor module 2 On be integrally formed.
The light emitting device 240 for having the above light emitting semiconductor module 2 constituted like that controls (this embodiment party as described below The control method of formula).That is, in the control method, when as driven object selection 1 or 1 or more semiconductor light-emitting elements When, the control pattern individually set according to the semiconductor light-emitting elements for being respectively relative to the selection, by driving circuit 243, Individually control the movement of each selected semiconductor light-emitting elements.In addition, control pattern is sent out comprising selected semiconductor The respective information that driving opportunity and driving time are at least defined along time shaft of optical element.
Specifically, using equipotential line 245-1 together from driving circuit 243 to any one line of driving line 244-1~244-5 Driving current is supplied between~245-5.It is connect through driving electrodes with the driving line for being supplied to driving current in the 2nd surface side electrode In semiconductor light-emitting elements, the compound of electronics and hole occurs in active layer, the active layer of the semiconductor light-emitting elements shines.Cause Light obtained from this shines effectively is enclosed by the 1st clad 202-1~202-5 and the 2nd clad 206-1~206-5.From work Property layer 203-1~203-5 outgoing light be incident on the inside of corresponding phase-modulation layer, because of the two-dimensional feedback of phase-modulation layer Caused enclosed effect and form defined mode.By injecting enough electrons and holes in active layer, it is incident on phase tune The light of preparative layer is with defined mode oscillation.The light of oscillation mode as defined in being formed is by the configuration pattern with different refractivity region Corresponding phase-modulation, by the light after phase-modulation as showing with the light of the corresponding light beam projecting pattern of configuration pattern from the The outgoing of 1 surface side electrode laterally outside (light beam projecting region).
(the 1st structure of the 2nd embodiment)
In the present embodiment, in the case where using the 1st structure, target beam view field semiconductor in office shines first It is all similarly set in part 200-1~200-5.In this case, it is able to carry out the semiconductor hair recorded in patent document 1 Various applications other than the application examples (to the application examples of object scanning laser light beam) of optical element.For example, according to this embodiment party Formula is able to carry out (first) to by 3 or more multiple patterns and switches over the various of the type of display in the same area of screen The application of display device, (second) are to STED (Stimulated Emission Depletion (stimulated emission depletion)) microscope The various illuminations of the application of light source, (third) to type to the light for continuously or intermittently irradiating identical patterns at one are answered With, (fourth) to by continuously to the pulsed light for irradiating identical patterns at one and in object wear the type in the hole of target pattern Laser processing application.
The example of application (first) as the 1st structure, has and carries out changed in stages shown in Figure 12 (a)~Figure 12 (c) The switching of the icon of instruction shows, carries out that the switching of much information shown in Figure 13 (a)~Figure 13 (c) is shown, by continuous Ground, which switches, to be shown slightly different pattern and applies as 1 region display activity video etc..These displays both can be In the display of common screen, or in the display of the transmissive viewing screen of head-mounted display.It can also make each semiconductor The luminescent color of light-emitting component 200-1~200-5 is mutually different color.
The example of application (second) as the 1st structure, for example, it is also possible to enable the semiconductor light emitting of semiconductor light-emitting elements 2 The number of element is multipair (even number), and using each pair of semiconductor light-emitting elements as test point, slightly different STED is micro- each other The light source of mirror.In this case, multiple test points can be observed simultaneously, therefore can be improved STED microscope to entire right As the speed of the scanning of object.
The example of application (third) as the 1st structure, having will be as the application examples of the 1st structure of the 1st embodiment (the third) illumination that example illustrates is altered to being capable of the multistage such application of switching.
The example of application (fourth) as the 1st structure, having will be as the application (fourth) of the 1st structure of the 1st embodiment The laser processing that illustrates of example be altered to apply as multiple driving electrodes successively pulsed drive.In this case, The pulse spacing of each element can be made long, therefore higher peak output can be obtained from each element, can be obtained bigger defeated Out.
(the 2nd structure of the 2nd embodiment)
In the present embodiment, in the case where using the 2nd structure, so that the target light of at least one semiconductor light-emitting elements Beam projection pattern and the target beam projection pattern of other at least one semiconductor light-emitting elements are differently set.Therefore, Neng Goujin Other than the application examples (to the application examples of object scanning laser light beam) for the semiconductor light-emitting elements recorded in row patent document 1 Various applications.For example, according to the present embodiment, be able to carry out (first) to by 3 or more multiple patterns in the same zone of screen Domain or mutually different multiple regions switch over the application of the various display devices of the type of display, (second) to STED The application of the light source of (Stimulated Emission Depletion (stimulated emission depletion)) microscope.
The example of application (first) as the 2nd structure, carries out the instruction of changed in stages shown in Figure 12 (a)~Figure 12 (c) The switching of icon shows, carries out that the switching of much information shown in Figure 13 (a)~Figure 13 (c) is shown, by continuously cutting It changes and shows slightly different pattern and applied as 1 region display activity video etc..These displays both can be for general The display of logical screen, or in the display of the transmissive viewing screen of head-mounted display.It can also make each semiconductor light emitting The luminescent color of element 200-1~200-5 is mutually different color.
The example of application (second) as the 2nd structure, for example, it is also possible to enable the semiconductor light emitting of semiconductor light-emitting elements 2 The number of element is multipair (even number), and using each pair of semiconductor light-emitting elements as test point, slightly different STED is micro- each other The light source of mirror.In this case, multiple test points can be observed simultaneously, therefore can be improved STED microscope to entire right As the speed of the scanning of object.
(the 3rd structure of the 2nd embodiment)
In the present embodiment, in the case where using the 3rd structure, the emission wavelength of at least one semiconductor light-emitting elements with In addition the emission wavelength of at least one semiconductor light-emitting elements is different.Therefore, it is able to carry out the semiconductor recorded in patent document 1 Various applications other than the application examples (to the application examples of object scanning laser light beam) of light-emitting component.For example, according to this implementation Mode, be able to carry out (first) to by 3 or more multiple patterns screen same area or mutually different multiple regions into The application of various display devices of the type of row switching display, (second) are to STED (Stimulated Emission Depletion (stimulated emission depletion)) application of light source of microscope, (third) to continuously or intermittently to irradiating identical patterns at one and face The application of the various illuminations of the type of the different multiple light of color.
The example of application (first) as the 3rd structure, has and carries out changed in stages shown in Figure 12 (a)~Figure 12 (c) The switching of the icon of instruction shows, carries out that the switching of much information shown in Figure 13 (a)~Figure 13 (c) is shown, by continuous Ground, which switches, to be shown slightly different pattern and applies as 1 region display activity video etc..These displays both can be In the display of common screen, or in the display of the transmissive viewing screen of head-mounted display.Each semiconductor light-emitting elements The luminescent color of 200-1~200-5 can arbitrarily be selected from possible multiple luminescent colors.
The example of application (second) as the 3rd structure, for example, it is also possible to enable the semiconductor light emitting element of semiconductor light-emitting elements 2 The number of part is multipair (even number), using each pair of semiconductor light-emitting elements as test point slightly different STED microscope each other Light source.In this case, multiple test points can be observed simultaneously, therefore can be improved STED microscope to entire object The speed of the scanning of object.
The example of application (third) as the 3rd structure, having will be as the application (third) of the 3rd structure of the 1st embodiment The illumination that illustrates of example be altered to being capable of the multistage such application of switching.
(the 3rd embodiment)
3rd embodiment is the one-dimensional configuration change of the semiconductor light-emitting elements of the 2nd embodiment into the reality of two-dimensional arrangement Mode is applied, it is identical as the 2nd embodiment in addition to such change.
5~Figure 17 referring to Fig.1 is illustrated the structure of the light emitting semiconductor module 3 of the 3rd embodiment.Figure 15 be from The figure when light emitting semiconductor module 3 of the 3rd embodiment is seen in 1st surface side of semiconductor light-emitting elements.Figure 16 is from supporting substrates Figure of the 4th surface side when seeing light emitting semiconductor module 3.Figure 17 is the sectional view of the XVI-XVI line along Figure 15 and Figure 16.In Figure 15 In~Figure 17 illustrate in 3 rows 5 column arrangement 15 semiconductor light-emitting elements and driving electrodes example, but semiconductor light-emitting elements and The number of driving electrodes may not be 15, in addition, two-dimensional be configured to arbitrarily.
As shown in Figure 15~Figure 17, light emitting semiconductor module 3 include multiple semiconductor light-emitting elements 300-1~300-15 and Supporting substrates 31.Semiconductor light-emitting elements 300-1~300-15 can also be respectively provided with layer identical with Fig. 2 of patent document 1 Structure, but it is not absolutely required to be same layer structure.Semiconductor light-emitting elements 300-1~300-15 is respectively provided with the 1st Face 300-1a~300-15a and the 2nd face 300-1b~300-15b, from the 1st face 300-1a~300-15a output light.Supporting substrates 31 multiple driving electrodes 31-1~31-15 with the 3rd face 31a and the 4th face 31b and with configuration on the 3rd face.In addition, Supporting substrates 31 can load multiple semiconductor light-emitting elements 300-1~300-15.Semiconductor light-emitting elements 300-1~300-15 Be respectively provided with active layer 303-1~303-15, with the phase-modulation layer 304-1 of active layer 303-1~303-15 optical bond~ 304-15, the 1st clad 302-1~302-15, the 2nd clad 306-1~306-15, the 2nd surface side electrode 308-1~308-15 With the 1st surface side electrode 310-1~310-15.In addition, the laminate structure of semiconductor light-emitting elements 300-1~300-15 at least divides It Bao Han not active layer 303-1~303-5 and phase-modulation layer 304-1~304-5.In addition, semiconductor is sent out in the 3rd embodiment The respective X-Y plane of optical element 300-1~300-5 also as the 1st embodiment, in the 2nd clad 306-1~306-5 and The interface of phase modulating layer 304-1~304-5 is set separately.In addition, the Z axis and semiconductor light-emitting elements orthogonal with X-Y plane The respective stacking direction of 300-1~300-5 is consistent.
The respective 2nd surface side electrode 308-1~308-15 of semiconductor light-emitting elements 300-1~300-15 and corresponding driving Electrode 31-1~31-15 connection.Phase-modulation layer 304-1~304-15 separately includes the fundamental region with the 1st refractive index 304-1a~304-15a and multiple and different refractive index area 304-1b with 2nd refractive index different from the 1st refractive index~ 304-15b.Multiple and different refractive index area 304-1b~304-15b according to respective center of gravity be located at fundamental region 304-1a~ Each lattice-site of imaginary tetragonal in 304-15a separates and configures pattern as the place of defined distance r, and configuration exists In the 304-1a~304-15a of fundamental region.Configuration pattern according to make from corresponding driving electrodes 31-1~31-15 supply drive Become target beam from the light beam projecting region of the 1st face 300-1a~300-15a light exported and light beam projecting pattern when electric current The mode of view field and target beam projection pattern is set.
In the 3rd embodiment, light emitting semiconductor module 2 also has at least any structure in the 1st~the 3rd structure. That is, in the 1st structure, at least one semiconductor in multiple semiconductor light-emitting elements for containing in the light emitting semiconductor module Light-emitting component (the 1st semiconductor light-emitting elements) and at least one other semiconductor light emittings different from the 1st semiconductor light-emitting elements Between element (the 2nd semiconductor light-emitting elements), respective target beam view field is substantially consistent.That is, the 1st and the 2nd half Between conductor light-emitting component, light beam projecting direction is different.In the 2nd structure, the target beam perspective view of the 1st semiconductor light-emitting elements Case and the target beam projection pattern of the 2nd semiconductor light-emitting elements are mutually different.In the 3rd structure, the 1st semiconductor light-emitting elements Emission wavelength and the 2nd semiconductor light-emitting elements emission wavelength it is mutually different.
In the present embodiment, in the case where 1 structure, target beam view field semiconductor light emitting component in office It is all the same in 300-1~300-15.In this case, the target beam projection of semiconductor light-emitting elements 300-1~300-15 Pattern both can be all identical, can also be a part of different from other parts.In addition, semiconductor light-emitting elements 300-1~300- 15 emission wavelength both can be all identical, can also be a part of different from other parts.In the case where 2 structure, at least 1 The target beam perspective view of the target beam projection pattern of a semiconductor light-emitting elements and other at least one semiconductor light-emitting elements Case is different.In this case, the target beam view field of semiconductor light-emitting elements 300-1~300-15 both can whole phases It together, can also be a part of different from other parts.In addition, the emission wavelength of semiconductor light-emitting elements 300-1~300-15 both may be used It, can also be a part of different from other parts with all identical.In the case where 3 structure, at least one semiconductor light-emitting elements Emission wavelength it is different from the emission wavelength of other at least one semiconductor light-emitting elements.In this case, semiconductor light emitting element The target beam projection pattern of part 300-1~300-15 and target beam view field both can be all identical, can also be with one Divide different from other parts.In any structure the emission wavelength of semiconductor light-emitting elements can by the material of active layer and The lattice constant etc. of imaginary tetragonal in the fundamental region of phase-modulation layer is adjusted.
As shown in Figure 15 and Figure 17, the 1st surface side electrode 310-1~310-15 has for the opening to central portion emergent light Portion 310-1a~310-15a.1st surface side electrode 310-1~310-15 can also substitute the electrode with opening portion but transparent Electrode.
The upper and lower relation of active layer 303-1~303-15 and phase-modulation layer 304-1~304-15 can also be with Figure 17 institute The upper and lower relation shown is opposite.In addition, also recorded in Figure 17 substrate layer 301-1~301-15, upper light guide layer 305b-1~ It is 305b-15, lower part photoconductive layer 305a-1~305a-15, contact layer 307-1~307-15, insulating layer 309-1~309-15, anti- Penetrating prevents a layer 311-1~311-15, but it is not absolutely required to have these layers by semiconductor light-emitting elements 300-1~300-15.
Constituent material, shape, size, the manufacturing method etc. of each layer, each region for the above-described, those skilled in the art Member can the contents based on patent document 1 suitably select, part thereof of example illustrated below.That is, each shown in Figure 17 The material of layer and an example of structure are as described below.Substrate layer 301-1~301-15 is made of GaAs, and the 1st clad 302-1~ 302-15 is made of AlGaAs.Active layer 303-1~303-15 has multi-quantum pit structure MQW.Phase-modulation layer 304-1~ 304-15 is by multiple and different refractions in fundamental region 304-1a~304-15a and embedment fundamental region 304-1a~304-15a Rate region 304-1b~304-15b is constituted.Fundamental region 304-1a~304-15a is made of GaAs, multiple and different index regions Domain 304-1b~304-15b is made of AlGaAs.Upper light guide layer 305b-1~305b-15 and lower part photoconductive layer 305a-1~ 305a-15 is made of AlGaAs.2nd clad 306-1~306-15 is made of AlGaAs.Contact layer 307-1~307-15 by GaAs is constituted.Insulating layer 309-1~309-15 is by SiO2Or silicon nitride is constituted.Antireflection layer 311-1~311-15 is by nitrogen SiClx (SiN), silica (SiO2) etc. dielectrics monofilm or multilayer dielectric film constitute.Multiple and different refractive index areas 304-1b~304-15b may be the hole for being enclosed argon, nitrogen or air etc..
In addition, in the case where the light emitting semiconductor module 3 has any structure of the 1st and the 2nd structure, preferred active layer The multi-quantum pit structure MQW of 303-1~303-15 includes barrier layer: AlGaAs/ well layer: the structure of InGaAs.In addition, this half In the case that conductor light emitting module 3 has the 3rd structure, the preferably multi-quantum pit structure MQW of active layer 303-1~303-15 includes Barrier layer: AlGaAs/ well layer: InGaAs, barrier layer: GaInAsP/ well layer: GaInAsP, barrier layer: InGaN/ well layer: InGaN, barrier layer: AlGaInP/ well layer: the structures such as GaInP.
In one example, in substrate layer 301-1~301-15 and the 1st clad 302-1~302-15 added with N-type Impurity.The impurity of p-type is added in the 2nd clad 306-1~306-15 and contact layer 307-1~307-15.In addition, the 1st packet The band gap of coating 302-1~302-15 and the 2nd clad 306-1~306-15 are greater than upper light guide layer 305b-1~305b- The band gap of 15 and lower part photoconductive layer 305a-1~305a-15.Upper light guide layer 305b-1~305b-15 and lower part photoconductive layer The energy band unoccupied place of multi-quantum pit structure MQW of the band gap of 305a-1~305a-15 greater than active layer 303-1~303-15 is set It is fixed.
Then, referring to Fig.1 8, the light emitting device for having light emitting semiconductor module 3 is illustrated.Figure 18 is to indicate have The block diagram of the structure of the light emitting device of light emitting semiconductor module 3.As shown in figure 18, light emitting device 340 includes semiconductor light emitting mould Block 3, power circuit 341, control signal input circuit 342 and driving circuit 343.Power circuit 341 is to driving circuit 343 and partly Conductor light emitting module 3 supplies power supply.Controlling signal input circuit 342 will be from the control signal of light emitting device 340 externally supplied It is transmitted to driving circuit 343.Driving circuit 343 supplies driving current to light emitting semiconductor module 3.Driving circuit 343 with partly lead Body light emitting module 3 is connected by the multiple driving line 344-1~344-15 and 1 common potential line 345 of supply driving current.The 1 surface side electrode 310-1~310-15 is connected with each other by connecting line 346.Drive line 344-1~344-15 and driving electrodes 31-1 ~31-15 is separately connected, and common potential line 345 and any electrode of the 1st surface side electrode 310-1~310-15 (are in Figure 18 310-15) connect.In addition, in Figure 18, the light emitting semiconductor module 3 that is indicated on driving circuit 343 and in driving circuit The light emitting semiconductor module 3 indicated under 343 respectively indicate the semiconductor light-emitting apparatus 300-1 of 1 light emitting semiconductor module 3~ The side 300-15 (the 1st surface side) and 31 side of supporting substrates (the 4th surface side).In Figure 18, the 1st surface side electrode 310-1~310-15 is logical The interconnection of connecting line 346 is crossed, 1 the 1st surface side electrode 310-15 of common potential line 345 and 1 is connect.But it is also possible to not It connects in this way and quantity corresponding with the 1st surface side electrode is arranged in common potential line, by driving circuit 343 and each 1st surface side electricity Pole 310-1~310-15 is connected by different common potential lines respectively.
Depending on the application, driving line 344-1~344-15 can both select a driving, can also drive simultaneously multiple.In addition, driving Dynamic circuit 343 seperated with light emitting semiconductor module 3 can both be constituted, can also be in the supporting substrates 31 of light emitting semiconductor module 3 On be integrally formed.
The light emitting device 340 for having the above light emitting semiconductor module 3 constituted like that controls (this embodiment party as described below The control method of formula).That is, in the control method, when as driven object selection 1 or 1 or more semiconductor light-emitting elements When, the control pattern individually set according to the semiconductor light-emitting elements for being respectively relative to the selection, by driving circuit 343, Individually control the movement of each selected semiconductor light-emitting elements.In addition, control pattern is sent out comprising selected semiconductor The respective information that driving opportunity and driving time are at least defined along time shaft of optical element.
Specifically, when using equipotential line together from driving circuit 343 to any one line of driving line 344-1~344-15 When supplying driving current between 345-1~345-15, in the 2nd surface side electrode through driving electrodes and the driving for being supplied to driving current Compound, the active layer hair of the semiconductor light-emitting elements in electronics and hole occurs for the active layer of the semiconductor light-emitting elements of line connection Light.Light obtained from shining because of this is effectively sealed by the 1st clad 302-1~302-15 and the 2nd clad 306-1~306-15 Enter.The light being emitted from active layer 303-1~303-15 is incident on the inside of corresponding phase-modulation layer, because of the two of phase-modulation layer Effect is enclosed caused by the feedback of dimension and forms defined mode.It is incident by injecting enough electrons and holes in active layer To phase-modulation layer light with defined mode oscillation.Formed as defined in oscillation mode light by with different refractivity region The corresponding phase-modulation of pattern is configured, being used as by the light after phase-modulation has light beam projecting region corresponding with configuration pattern It is emitted with the light of light beam projecting pattern from the 1st surface side electrode laterally outside.
(the 1st structure of the 3rd embodiment)
In the present embodiment, in the case where using the 1st structure, target beam view field semiconductor in office shines first It is all similarly set in part 300-1~300-15.Therefore, the semiconductor light-emitting elements recorded in patent document 1 are able to carry out Various applications other than application examples (to the application examples of object scanning laser light beam).Application and the 2nd embodiment party being able to carry out Application (first)~(fourth) of 1st structure of formula is identical.
(the 2nd structure of the 3rd embodiment)
In the present embodiment, in the case where using the 3rd structure, the target beam of at least one semiconductor light-emitting elements is thrown Shadow pattern is different from the target beam projection pattern of other at least one semiconductor light-emitting elements.Therefore, it is able to carry out patent document Various applications other than the application examples (to the application examples of object scanning laser light beam) for the semiconductor light-emitting elements recorded in 1. The application being able to carry out is identical as the application (first) and (second) of the 2nd structure of the 2nd embodiment.
(the 3rd structure of the 3rd embodiment)
In the present embodiment, in the case where using the 3rd structure, the emission wavelength of at least one semiconductor light-emitting elements with In addition the emission wavelength of at least one semiconductor light-emitting elements is different.Therefore, it is able to carry out the semiconductor recorded in patent document 1 Various applications other than the application examples (to the application examples of object scanning laser light beam) of light-emitting component.Be able to carry out application with Application (first)~(third) of 1st structure of the 2nd embodiment is identical.
(the 4th embodiment)
4th embodiment is to be altered to come from by the light output for coming from the side substrate layer 101-1,101-2 in the 1st embodiment With the embodiment of substrate layer 101-1,101-2 opposite side.As a result, since light output does not pass through substrate layer, so can eliminate Absorption of the substrate layer to output light, can prevent the decaying of output light and the fever of substrate layer.With the 1st in addition to such change Embodiment is identical.
9~Figure 21 referring to Fig.1 is illustrated the structure of the light emitting semiconductor module 1B of the 4th embodiment.Figure 19 be from 1st surface side of semiconductor light-emitting elements sees that the figure when light emitting semiconductor module 1B of the 4th embodiment, Figure 20 are from supporting substrates Figure of the 4th surface side when seeing light emitting semiconductor module 1B.Figure 21 is the sectional view of the XX-XX line along Figure 19 and Figure 20.
Such as Figure 19~Figure 21 as indicated, light emitting semiconductor module 1B includes a pair of of semiconductor light-emitting elements 100B-1,100B- 2 and supporting substrates 11B.Semiconductor light-emitting elements 100B-1,100B-2 can also be respectively provided with identical as Fig. 2 of patent document 1 Layer structure, but it is not absolutely required to be same layer structure.Semiconductor light-emitting elements 100B-1,100B-2 are respectively provided with 1st face 100B-1a, 100B-2a and the 2nd face 100B-1b, 100B-2b, from the 1st face 100B-1a, 100B-2a output light.Bearing Substrate 11B is with the 3rd face 11Ba and the 4th face 11Bb and has a pair of of driving electrodes 11B-1,11B- of the configuration on the 3rd face 2.In addition, supporting substrates 11B can load a pair of of semiconductor light-emitting elements 100B-1,100B-2.Semiconductor light-emitting elements 100B- 1,100B-2 is respectively provided with active layer 103B-1,103B-2, the phase-modulation layer with active layer 103B-1,103B-2 optical bond 104B-1,104B-2, the 1st clad 102B-1,102B-2, the 2nd clad 106B-1,106B-2, the 2nd surface side electrode 108B- 1,108B-2 and the 1st surface side electrode 110B-1~110B-2.In addition, the stacking knot of semiconductor light-emitting elements 100B-1,100B-2 Structure body at least separately includes active layer 103B-1,103B-2 and phase-modulation layer 104B-1,104B-2.
Respective 2nd surface side electrode 108B-1, the 108B-2 of semiconductor light-emitting elements 100B-1,100B-2 and corresponding driving Electrode 11B-1~11B-2 connection.Phase-modulation layer 104B-1,104B-2 separately include the fundamental region with the 1st refractive index 104B-1a, 104B-2a and multiple and different refractive index area 104B-1b with 2nd refractive index different from the 1st refractive index, 104B-2b.In addition, multiple and different refractive index area 104B-1b, 104B-2b are located at according to respective center of gravity and fundamental region Each lattice-site of imaginary tetragonal in 104B-1a, 104B-2a separates configuration diagram as the place of defined distance r Case configures in fundamental region 104B-1a, 104B-2a.Configuration pattern according to make with from corresponding driving electrodes 11B-1, The light beam projecting pattern that shows of light that is exported when 11B-2 supplies driving current from the 1st face 100B-1a, 100B-2a and as the light The light beam projecting region of the drop shadow spread of beam projection pattern and target beam projection pattern and target beam view field are consistent Mode is set.
In the 4th embodiment, light emitting semiconductor module 1B also has at least any structure in the 1st~the 3rd structure. That is, in the 1st structure, at least one semiconductor in multiple semiconductor light-emitting elements for containing in the light emitting semiconductor module Light-emitting component (the 1st semiconductor light-emitting elements) and at least one other semiconductor light emittings different from the 1st semiconductor light-emitting elements Between element (the 2nd semiconductor light-emitting elements), respective target beam view field is substantially consistent.That is, the 1st and the 2nd half Between conductor light-emitting component, light beam projecting direction is different.In the 2nd structure, the target beam perspective view of the 1st semiconductor light-emitting elements Case and the target beam projection pattern of the 2nd semiconductor light-emitting elements are mutually different.In the 3rd structure, the 1st semiconductor light-emitting elements Emission wavelength and the 2nd semiconductor light-emitting elements emission wavelength it is mutually different.
As shown in Figure 19 and Figure 21, the 1st surface side electrode 110B-1,110B-2 has for the opening to central portion emergent light Portion 110B-1a, 110B-2a.1st surface side electrode 110B-1,110B-2 can also substitute the electrode with opening portion but transparent Electrode.
The upper and lower relation of active layer 103B-1,103B-2 and phase-modulation layer 104B-1,104B-2 can also be with Figure 21 institutes The upper and lower relation shown is opposite.In addition, in order to reduce the absorption in the light of substrate layer 101B-1,101B-2, it can also be in substrate layer DBR layer 120B-1,120B-2 are set between 101B-1,101B-2 and the 1st clad 102B-1,102B-2.DBR layer 120B-1, As long as 120B-2 can also be other than this between phase-modulation layer 104B-1,140B-2 and substrate layer 101B-1,101B-2 Place.In addition, in Figure 21, also record substrate layer 101B-1,101B-2, upper light guide layer 105Ba-1,105Ba-2, under Portion photoconductive layer 105Bb-1,105Bb-2, contact layer 107B-1,107B-2, insulating layer 109B-1,109B-2, antireflection layer 111B-1,111B-2, but it is not absolutely required to have semiconductor light-emitting elements 100B-1,100B-2.
Constituent material, shape, size, the manufacturing method etc. of each layer, each region for the above-described, those skilled in the art Member can the contents based on patent document 1 suitably select, part thereof of example illustrated below.That is, each shown in Figure 21 The material of layer and an example of structure are as described below.Substrate layer 101B-1,101B-2 are made of GaAs, the 1st clad 102B-1, 102B-2 is made of AlGaAs.Active layer 103B-1,103B-2 have multi-quantum pit structure MQW.Phase-modulation layer 104B-1, 104B-2 respectively include fundamental region 104B-1a, 104B-2a and be embedded to fundamental region 104B-1a, 104B-2a in it is multiple not With refractive index area 104B-1b, 104B-2b.104B-1a, 104B-2a are made of GaAs for fundamental region.Multiple and different refractive index 104B-1b, 104B-2b are made of AlGaAs in region.Upper light guide layer 105Bb-1,105Bb-2 and lower part photoconductive layer 105Ba-1, 105Ba-2 is made of AlGaAs.2nd clad 106B-1,106B-2 is made of AlGaAs.Contact layer 107B-1,107B-2 by GaAs is constituted.Insulating layer 109B-1,109B-2 are by SiO2Or silicon nitride is constituted.Antireflection layer 111B-1,111B-2 are by nitrogen SiClx (SiN), silica (SiO2) etc. dielectrics monofilm or multilayer dielectric film constitute.Multiple and different refractive index areas 104B-1b, 104B-2b may be the hole for being enclosed argon, nitrogen or air etc..
In addition, in the case where light emitting semiconductor module 1B has any structure of the 1st and the 2nd structure, it is preferably active The multi-quantum pit structure MQW of layer 103B-1,103B-2 include barrier layer: AlGaAs/ well layer: the structure of InGaAs.In addition, at this In the case that light emitting semiconductor module 3 has the 3rd structure, the multi-quantum pit structure MQW packet of preferably active layer 103B-1,103B-2 Containing barrier layer: AlGaAs/ well layer: InGaAs, barrier layer: GaInAsP/ well layer: GaInAsP, barrier layer: InGaN/ well layer: InGaN, barrier layer: AlGaInP/ well layer: the structures such as GaInP.
In one example, in substrate layer 101B-1,101B-2 and the 1st clad 102B-1,102B-2 added with N-type Impurity.The impurity of p-type is added in the 2nd clad 106B-1,106B-2 and contact layer 107B-1,107B-2.In addition, the 1st packet The band gap of coating 102B-1,102B-2 and the 2nd clad 106B-1,106B-2 are greater than upper light guide layer 105Ba-1,105Ba- The band gap of 2 and lower part photoconductive layer 105Bb-1,105Bb-2.Upper light guide layer 105Ba-1,105Ba-2 and lower part photoconductive layer The energy band unoccupied place of multi-quantum pit structure MQW of the band gap of 105Bb-1,105Bb-2 greater than active layer 103B-1,103B-2 is set It is fixed.
(the 1st structure of the 4th embodiment)
In the case where 1 structure, in target beam view field semiconductor light emitting component 100B-1,100B-2 in office All similarly set.In this configuration, the target beam projection pattern and semiconductor light emitting element of semiconductor light-emitting elements 100B-1 The target beam projection pattern of part 100B-2 both can be the same or different.In addition, the hair of semiconductor light-emitting elements 100B-1 Optical wavelength and the emission wavelength of semiconductor light-emitting elements 100B-2 both may be the same or different.In addition, in the 1st structure In the case of, it is able to carry out application in a same manner as in the first embodiment.
(the 2nd structure of the 4th embodiment)
In the case where 2 structure, the target beam projection pattern and semiconductor light emitting of semiconductor light-emitting elements 100B-1 The target beam projection pattern of element 100B-2 is different.In this configuration, the target beam of semiconductor light-emitting elements 100B-1 is thrown Shadow zone domain and the target beam view field of semiconductor light-emitting elements 100B-2 both can be the same or different.In addition, partly leading The emission wavelength of body light-emitting component 100B-1 both can be identical with the emission wavelength of semiconductor light-emitting elements 100B-2, can also not Together.In addition, being able to carry out and similarly being applied with the 2nd structure of the 1st embodiment in the case where 2 structure.
(the 3rd structure of the 4th embodiment)
In the case where 3 structure, the emission wavelength and semiconductor light-emitting elements 100B- of semiconductor light-emitting elements 100B-1 2 emission wavelength is mutually different.In this configuration, the target beam view field of semiconductor light-emitting elements 100B-1 and target light Beam projection pattern both can target beam view field with semiconductor light-emitting elements 100B-2 and target beam projection pattern phase It together can also be different.In any structure, the emission wavelength of semiconductor light-emitting elements can pass through the material of active layer It is adjusted with the lattice constant of imaginary tetragonal etc. in the fundamental region of phase-modulation layer.In addition, 3 structure the case where Under, it is able to carry out and is similarly applied with the 3rd structure of the 1st embodiment.
More than, the 1st~the 4th embodiment of the invention is illustrated, but the present invention is not limited to the above-mentioned the 1st ~the 4 embodiment.
For example, instantiating the example that different refractivity region is round (positive round) in Fig. 4, Fig. 5, but different refractivity area Domain may be the shape other than circle.For example, the shape on the X-Y plane of multiple and different refractive index areas is positive round, just In the case where rectangular, regular hexagon, octagon, positive ten hexagon, rectangle and elliptical any shape, that is, variant folding The shape in rate region is penetrated as in the case where mirror symmetry (line is symmetrical), in phase-modulation layer, can accurately be set from structure At the respective lattice-site O of multiple unit structure region R of imaginary tetragonal to corresponding each different refractivity region The angle φ that the direction of center of gravity G1 is formed with the s axis for being parallel to X-axis.In addition, on the X-Y plane of multiple and different refractive index areas Shape can also show the shape without 180 ° of rotational symmetry such as Figure 22 (a)~Figure 22 (j).Without 180 ° In the shape of rotational symmetry, for example including isosceles right triangle shown in equilateral triangle, Figure 22 (a) shown in Figure 22 (b), Shape, Figure 22 (h) institute shown in Figure 22 (i) of isosceles triangle shown in Figure 22 (c), 2 circles or elliptical a part overlapping Tear-drop type shape shown in the ovum type shape shown, Figure 22 (d), ladder shown in arrowhead-shaped shape, Figure 22 (f) shown in Figure 22 (e) Shape shown in Figure 22 (j) of a part overlapping of pentagon shown in shape, Figure 22 (g), 2 rectangles.In this case, energy Enough obtain higher light output.In addition, ovum type shape such as Figure 22 (h) shown in be by so that along its long axis an end The mode that the size of neighbouring short-axis direction is less than the size of the short-axis direction near another end obtains ovalizing deflection The shape arrived.Be shown in tear-drop type shape such as Figure 22 (d) by by along an elliptical Leading Edge Deformation for its long axis at along length Shape obtained from the end of axis direction point outstanding.It is the side composition three of rectangle shown in arrowhead-shaped shape such as Figure 22 (e) Angular notch and the shape that the protrusion of triangle is constituted while opposite with this.
1st~the 3rd embodiment is constituted in a manner of the substrate layer side output light from each semiconductor light-emitting elements, but It can also be as the 4th embodiment to be constituted in a manner of with substrate layer opposite side output light.In the 4th embodiment, half The number of conductor light-emitting component is 2 (a pair), but can also be as the 2nd and the 3rd embodiment, by it in one-dimensional or two-dimentional Configuration 3 or more semiconductor light-emitting elements.Making light, output light does not pass through substrate from the structure exported with substrate layer opposite side Layer, therefore can be avoided the light absorption of substrate layer, the decaying of output light and the fever of substrate layer can be prevented.
In phase-modulation layer, the 1st variation (variation of phase-modulation layer shown in Fig. 4 that can also be as shown in figure 23 N04-m) like that, setting includes the interior of multiple and different refractive index areas for generating light beam projecting region and light beam projecting pattern Side region A and surround inside region A periphery lateral area B.Inside region A is substantially by being each configured with pair The region that the unit structure region R in the different refractivity region answered is constituted.It is different that lateral area B is provided with multiple periphery lattice-sites Refractive index area, as an example, the center of gravity in multiple periphery lattice-site different refractivity region with by it is imaginary just Amplify the lattice-site in tetragonal as defined in the periphery setting lattice structure identical with the imaginary tetragonal of prismatic crystal lattice It is consistent.In addition, Figure 23 indicates situation when seeing the variation of phase modulating layer along thickness direction (Z-direction).In Figure 23 In, the profile (lateral area B) in outside indicates a part in phase-modulation region.The inside region A surrounded by lateral area B is It is as the 1st~the 4th embodiment, include multiple and different refractions for generating light beam projecting region and light beam projecting pattern The phase-modulation region (region being substantially made of multiple unit structure region R) in rate region.Therefore, in the example of Figure 23 In, the phase-modulation region of phase-modulation layer is made of inside region A and lateral area B.As described above, lateral area B is packet The lattice positions being contained in imaginary tetragonal have the region in multiple periphery lattice-site different refractivity regions of center of gravity, Its an example of following presentation.That is, can also be with the imagination of the lattice constant of the imaginary tetragonal of lateral area B and inside region A Tetragonal lattice constant it is equal, and the shapes and sizes in each periphery lattice-site different refractivity region of lateral area B It is equal with the shapes and sizes in different refractivity region of inside region A.According to the variation, it is able to suppress towards direction in face Light leakage, can be realized the reduction of oscillation threshold current.
In addition, in figures 4 and 5, being illustrated in and separately being advised with each lattice-site of the imaginary tetragonal in fundamental region Different refractivity region (hereinafter referred to as " displacement different refractivity region " of the place of fixed distance with center of gravity G1.) each 1 example is respectively set in unit structure region.It can also be so that all center of gravity position but be displaced different refractivity region Mode in the place for separating defined distance with above-mentioned each lattice-site, is divided into and is arranged multiplely.In addition it is also possible to not only exist It is displaced different refractivity region and lattice-site different refractivity region is set on each lattice-site.Lattice-site different refractivity area Domain is the area as displacement different refractivity region with the refractive index different with the refractive index of fundamental region (the 1st refractive index) Domain can be both made of material (material of identical refractive index) identical with displacement different refractivity region, it is also possible that its A part is Chong Die with a part in displacement different refractivity region.
Herein, referring to Figure 24~Figure 26, to not only setting displacement different refractivity region but also setting lattice-site difference is rolled over The example in the case where rate region is penetrated to be illustrated.Figure 24 is for illustrating not only setting displacement different refractivity region but also setting Set in the case where lattice-site different refractivity region, displacement different refractivity region center of gravity and lattice-site different refractivity area The figure of the positional relationship in domain.Figure 25 is to indicate that displacement different refractivity region but also setting lattice-site different refractivity is not only arranged In the case where region, displacement different refractivity region and lattice-site different refractivity region combined example (rotation mode) Figure.Figure 26 is in the case where indicating that displacement different refractivity region but also setting lattice-site different refractivity region is not only arranged Variation (rotation mode) figure.
In these figures, O indicates that lattice-site, G1 indicate the center of gravity of displacement refractive index area, and G2 indicates lattice-site difference folding Penetrate the center of gravity in rate region.As shown in figure 24, the positional relationship of the center of gravity G1 and lattice-site O of different refractivity region n04-mb are displaced It is identical as Fig. 5, but in Figure 24, herein on be additionally provided with lattice-site different refractivity region n04-mc.In Figure 24, lattice The center of gravity G2 of point different refractivity region n04-mc is Chong Die with lattice-site O, but as shown in figure 26, center of gravity G2 can not also be in crystalline substance On lattice point O.In Figure 24, displacement different refractivity region n04-mb and lattice-site different refractivity region n04-mc is circle Shape, the two is overlapped, but it's not limited to that for the combination of the two.
As shown in figure 25, as displacement different refractivity region n04-mb's and lattice-site different refractivity region n04-mc Combination considers various combinations.Figure 25 (a) is the combination of Figure 24.Figure 25 (b) is displacement different refractivity region n04-mb and lattice The combination that point different refractivity region n04-mc is square.Figure 25 (c) is displacement different refractivity region n04-mb and crystalline substance Lattice point different refractivity region n04-mc is circle, but the combination that a part of the two overlaps each other.Figure 25 (d) is to be displaced not It is square with refractive index area n04-mb and lattice-site different refractivity region n04-mc, and a part of the two weighs each other Folded combination.Figure 25 (e) is displacement different refractivity region n04-mb and the lattice-site different refractivity region for making Figure 25 (d) N04-mc is arbitrarily rotated centered on respective center of gravity G1, G2 (lattice-site O), so that the combination that the two does not overlap each other.Figure 25 (f) be displacement different refractivity region n04-mb for triangle, and lattice-site different refractivity region n04-mc is square Combination.Figure 25 (g) is the displacement different refractivity region n04-mb and lattice-site different refractivity region n04-mc for making Figure 25 (f) It is arbitrarily rotated centered on respective center of gravity G1, G2 (lattice-site O), so that the combination that the two does not overlap each other.Figure 25 (h) is The displacement different refractivity region n04-mb of Figure 25 (a) is divided into the combination in two circular regions.Figure 25 (i) is to be displaced not It is divided into squares and triangles with refractive index area n04-mb, lattice-site different refractivity region n04-mc is triangle Combination.Figure 25 (j) is the displacement different refractivity region n04-mb and lattice-site different refractivity region n04-mc for making Figure 25 (i) The arbitrarily postrotational combination centered on respective center of gravity G1, G2 (lattice-site O).Figure 25 (k) is displacement different refractivity area Domain n04-mb and lattice-site different refractivity region n04-mc are square, and displacement different refractivity region n04-mb is divided At 2 squares, the direction on the side of each square is towards unidirectional combination.It is not provided only with displacement different refractivity area Domain and in the case where being provided with lattice-site different refractivity region, because of the entire different refractivity that the rwo is composed Region does not have 180 ° of rotational symmetry, so higher light output can be obtained.
In different refractivity region (including periphery lattice-site different refractivity region, lattice-site different refractivity region) In the case that shape is the shape with linear side, the direction on its side is preferably made to constitute the specific of the crystal of substrate layer It is consistent in the orientation of face.In this way, then in the case where making different refractivity region be sealed with the hole of argon, nitrogen or air etc., into The control of the shape in the empty easy hole of row, is able to suppress the defect in the crystal layer of the upper growth in hole.
In addition, be correspondingly arranged with each lattice-site different refractivity region (including periphery lattice-site different refractivity region, Lattice-site different refractivity region) shape and number might not be identical in 1 phase-modulation region.It can also be such as Figure 27 Shown in (the 2nd variation of phase-modulation layer n04-m shown in Fig. 4), so that the shape and number in different refractivity region are by each A lattice-site is different.
Then, matching to the different refractivity region n04-mb for determining phase-modulation layer n04-m by axis shift-up mode The case where placing graphic pattern, is illustrated.In addition, in the configuration diagram of the different refractivity region n04-mb as phase-modulation layer n04-m Case determining method, in the case where above-mentioned rotation mode is replaced using axis shift-up mode, obtained phase-modulation layer also can Enough it is applied to the light emitting semiconductor module of above-mentioned various embodiments.
Figure 28 is that (axis moves up for configuration pattern for illustrating the different refractivity region n04-mb of phase-modulation layer n04-m Position mode) schematic diagram.Phase-modulation layer n04-m include the 1st refractive index fundamental region n04-ma and by with the 1st refractive index not The different refractivity region n04-mb that the 2nd same refractive index is constituted.Herein, the example phase in phase-modulation layer n04-m, with Fig. 4 The imaginary tetragonal being prescribed on an x-y plane is set together.One side of tetragonal is parallel with X-axis, another side It is parallel with Y-axis.At this point, the unit structure region R of the square centered on the lattice-site O of tetragonal is spread along X-axis It is multiple to arrange (x1~x4) and set along multiple rows (y1~y3) of Y-axis in two dimension shape.When by the seat of each unit structure region R When being designated as the position of centre of gravity of each unit structure region R, the position of centre of gravity is consistent with the lattice-site O of imaginary tetragonal.It is more A different refractivity region n04-mb is respectively arranged 1 in constituent parts structural region R.The plane of different refractivity region n04-mb Shape is, for example, circle.Lattice-site O can both be located at the outside of different refractivity region n04-mb, also may include in different foldings Penetrate the inside of rate region n04-mb.
In addition, the ratio area S of different refractivity region n04-mb shared in 1 unit structure region R is known as filling out Fill factor (FF).When the lattice spacing of tetragonal is a, the fill factor FF of different refractivity region n04-mb is as S/ a2To assign.S is the area of the different refractivity region n04-mb of X-Y plane, in the shape of different refractivity region n04-mb For example, in the case where positive round, positive diameter of a circle D is used and as S=π (D/2)2To assign.In addition, in different refractivity area In the case that the shape of domain n04-mb is square, use the length LA on a side of square and as S=LA2To assign.
Figure 29 is to illustrate different refractivity area for an example as the configuration pattern determined by axis displacement mode The figure of the positional relationship of the center of gravity G1 and the lattice-site O (x, y) in imaginary tetragonal of domain n04-mb.As shown in figure 29, respectively The center of gravity G1 configuration of different refractivity region n04-mb is on the linel.Straight line L is the correspondence by unit structure region R (x, y) Lattice-site O (x, y), the inclined straight line in each side relative to tetragonal.In other words, straight line L is relative to regulation constituent parts The inclined straight line of both sides of the s axis and t axis of structural region R (x, y).Straight line L is θ relative to the inclination angle of s axis.Tiltangleθ exists It is fixed in phase-modulation layer n04-m.Tiltangleθ meets 0 ° of 90 ° of < θ <, in one example θ=45 °.Alternatively, tiltangleθ is full 180 ° of 270 ° of < θ < of foot, in one example θ=225 °.Meet 0 ° of < θ <, 90 ° or 180 ° 270 ° of < θ <'s in tiltangleθ In the case of, straight line L extends to third quadrant from the 1st quadrant by s axis and the coordinate plane of t axis convention.Alternatively, tiltangleθ meets 90 ° of 180 ° of < θ <, in one example θ=135 °.Alternatively, tiltangleθ meets 270 ° of 360 ° of < θ <, in one example θ =315 °.In the case where tiltangleθ meets 90 ° of 180 ° or 270 ° of < θ <, 360 ° of < θ <, straight line L is from by s axis and t axis convention The 2nd quadrant of coordinate plane extend to the 4th quadrant.In this way, tiltangleθ is the angle in addition to 0 °, 90 °, 180 ° and 270 °. Herein, enabling lattice-site O (x, y) is r (x, y) at a distance from center of gravity G1.X indicates the position of x-th of lattice-site of X-axis, and y indicates Y The position of y-th of lattice-site of axis.In the case where the value that distance r (x y) is positive, center of gravity G1 be located at 1st quadrant (or the 2nd as Limit).In the case where the value that distance r (x y) is negative, center of gravity G1 is located at third quadrant (or the 4th quadrant).It is 0 in distance r (x, y) In the case where, lattice-site O and center of gravity G1 are consistent with each other.
The center of gravity G1's and unit structure region R (x, y) of variant refractive index area n04-mb shown in Figure 28 is corresponding The distance r (x, y) of lattice-site O (x, y) and target beam projection pattern (light image) correspondingly, press variant refractive index area n04- Mb is individually set.The distribution of distance r (x, y) is by each by x (being x1~x4 in the example of Figure 28) and y (the example y1 of Figure 28 ~y3) the position that determines of value there is specific value, but be not necessarily limited to specific function representation.Point of distance r (x, y) Cloth is as carrying out after extracting phase distribution in COMPLEX AMPLITUDE obtained from inverse fourier transform target beam projection pattern Distribution determines.That is,
Shown in Figure 29 the phase P (x, y) of unit structure region R (x, y) be P0In the case where distance r (x, y) set It is 0, is π+P in phase P (x, y)0In the case where distance r (x, y) be set as maximum value R0, it is-π+P in phase P (x, y)0Feelings Distance r (x, y) is set as minimum value-R under condition0.Then, to become r (x, y)={ P relative to in-between phase P (x, y) (x, y)-P0}×R0The mode set distance r (x, y) of/π.Herein, initial phase P0It can arbitrarily set.Tetragonal in season Lattice spacing be a when, the maximum value R of r (x, y)0The range of formula (10) for example, below.
[numerical expression 10]
In addition, when seeking COMPLEX AMPLITUDE from target beam projection pattern, by using the calculating generated in hologram When Gerchberg-Saxton (GS) method for generally using as iterative algorithm, can be improved the reproduction of light beam projecting pattern Property.
Figure 30 is the 1st variation of the phase-modulation layer as Figure 28, is illustrated only in the determination region of phase-modulation layer Using the top view of the example of the nearly periodic structure of refractive index.In the example shown in Figure 30, with Figure 23 shown in as example, The inside of the inside region RIN of square is formed with for being emitted the nearly periodic structure (example: figure for becoming purpose light beam projecting pattern 28 structure).On the other hand, in the lateral area ROUT for surrounding inside region RIN, the lattice positions of tetragonal, configuration There is the consistent round different refractivity region of position of centre of gravity.Side region RIN and lateral area ROUT, the pros of imagination setting The lattice spacing of lattice is mutually the same (=a).In the case of such a construction, it is also distributed light in outer side region ROUT, thus, it is possible to The production of enough high-frequency noises (so-called window function noise) for inhibiting the peripheral portion luminous intensity change dramatically due to side region RIN and generating It is raw.Furthermore it is possible to inhibit the light leakage towards direction in face, the reduction of threshold current can be expected.
In addition, multiple semiconductor light-emitting elements as the light emitting semiconductor module from above-mentioned various embodiments are distinguished The relationship of the phase distribution P (x, y) of light image that the light beam projecting pattern of output obtains and phase-modulation layer n04-m be above-mentioned (Fig. 5) equally in the case where rotation mode.Therefore, regulation tetragonal above-mentioned first precondition, by above-mentioned formula (1)~ Above-mentioned second precondition as defined in formula (3), the above-mentioned third precondition as defined in above-mentioned formula (4) and (5) and pass through upper It states under above-mentioned 4th precondition that formula (6) and formula (7) determine, phase-modulation layer n04-m is in a manner of meeting condition below It constitutes.That is, so that from lattice-site O (x, y) to corresponding different refractivity region n04-mb center of gravity G distance r (x, y) at To meet
R (x, y)=C × (P (x, y)-P0)
C: for proportionality constant, such as R0/π
P0: for arbitrary constant, such as this is corresponding not for configuration in unit structure region R (x, y) for 0 mode of relationship With refractive index area n04-mb.That is, distance r (x, y) is P in the phase P (x, y) of unit structure region R (x, y)0In the case where It is set as 0, is π+P in phase P (x, y)0In the case where be set as maximum value R0, it is-π+P in phase P (x, y)0The case where divide into It is set to minimum value-R0.In the case where target beam projection pattern to be obtained, Fourier is carried out to the target beam projection pattern Inverse transformation, enables that distance r (x, y) is distributed in multiple and different refractive index area n04- accordingly with the phase P (x, y) of its complex amplitude Mb.Phase P (x, y) and distance r (x, y) can also be mutually proportional.
In addition, the far field image after the Fourier transform of progress laser beam can take single or multiple light spot form, circle The various shapes such as ring-shaped, rectilinear form, character shape, double annulus shape or Laguerre Gaussian beam shape.Because can also Beam direction is enough controlled, so, by by multiple semiconductor light emittings of the light emitting semiconductor module of above-mentioned various embodiments Element is in one-dimensional or two-dimensional array respectively, such as carries out the laser machine of high-velocity scanning with can be realized electrical resistance.In addition, Because light beam projecting pattern is indicated with the angle information of far-end field, it is with two-dimensional position in target beam projection pattern In the case where bitmap images that information indicates etc., wave number space is transformed to after being temporarily transformed to angle information, is carried out later Inverse fourier transform.
As the method for obtaining intensity distribution and phase distribution from the COMPLEX AMPLITUDE obtained by inverse fourier transform, example It, can be by using the abs function of the numeric value analysis software " MATLAB " of MathWorks company such as about intensity distribution I (x, y) It is calculated, about phase distribution P (x, y), the angle function for being able to use MATLAB is calculated.
Herein, it illustrates from the inverse fourier transform result of target beam projection pattern and seeks phase distribution P (x, y), determine When distance r (x, y) of variant refractive index area n04-mb, using general Discrete Fourier Transform (or high speed Fourier become Change) calculated in the case where focus.In addition, Figure 31 is the inverse fourier transform knot illustrated from target beam projection pattern Fruit seeks phase angle distribution (the rotation angular distribution for being equivalent to rotation mode), determines the pass when configuration in different refractivity region Infuse the figure of point.As target beam projection pattern, from the COMPLEX AMPLITUDE meter obtained by the inverse fourier transform of Figure 31 (a) The light beam projecting pattern of calculation becomes state shown in Figure 31 (b).As shown in Figure 31 (a) and Figure 31 (b), when be divided into respectively A1, When this 4 quadrants of A2, A3 and A4, the 1st quadrant of the light beam projecting pattern of Figure 31 (b) present the 1st quadrant of Figure 31 (a), The overlapping pattern that the pattern overlapping of the third quadrant of pattern and Figure 31 (a) after rotating 180 degree is formed.Figure 31 (b) the 2nd as Limit the pattern overlapping formation of the 4th quadrant of pattern and Figure 31 (a) that the 2nd quadrant of Figure 31 (a) is presented, after rotation 180 degree Overlapping pattern.Figure 31 (b) third quadrant present Figure 31 (a) third quadrant, rotation 180 degree after pattern and Figure 31 (a) 1st quadrant pattern overlapping formed overlapping pattern.The 4th quadrant of Figure 31 (a), rotation is presented in the 4th quadrant of Figure 31 (b) The overlapping pattern that the pattern overlapping of 2nd quadrant of pattern and Figure 31 (a) after turnback is formed.At this point, after rotation 180 degree Pattern is the pattern based on -1 light ingredient.
Therefore, it is using only in pattern of the 1st quadrant with value as the light image (former light image) before inverse fourier transform In the case of, the 1st quadrant of former light image is presented in the third quadrant of the light beam projecting pattern of acquisition, in the light beam projecting pattern of acquisition 1st quadrant the pattern after the 1st quadrant of former light image to be rotated to 180 degree is presented.
In addition, in said structure, as long as the structure comprising active layer and phase-modulation layer, material class, film thickness, layer Structure is just able to carry out various changes.Herein, about the perturbation from imaginary tetragonal be 0 in the case where so-called pros Lattice photon crystal laser, scaling law are set up.That is, in the case where wavelength becomes constant α times, it can be by making entire pros Lattice structure is α times to obtain same standing wave state.Equally, in the present embodiment, it can also utilize corresponding with wavelength The structure of scaling law decision phase-modulation layer n04-m.Therefore, by using the active layer for issuing the light such as blue, green, red 12, with scaling law corresponding with wavelength, additionally it is possible to realize the semiconductor light-emitting elements of output visible light.
In addition, in the case where the tetragonal of lattice spacing a, the unit vector of orthogonal coordinates is x in season, when y, substantially Translation vector a1=ax, a2=ay, relative to translation vector a1、a2Basic inverse lattice vector b1=(2 π/a) x, b2=(2 π/a) y.The wave-number vector of the wave present in lattice is k=nb1+mb2In the case where (n, m are arbitrary integer), wave number k is present in Γ point obtains lattice spacing a and wavelength X in the case that wherein the size of wave-number vector is equal to the basic size against lattice vector Equal resonance mode (standing wave in X-Y plane).Such resonance mode can be obtained in above-mentioned various embodiments Oscillation under (standing wave state).At this point, consider in the face parallel with tetragonal there are if TE mode as electric field, this There are 4 modes due to the symmetry of tetragonal for the sample lattice spacing standing wave state equal with wavelength.In above-mentioned various realities It applies in mode, is all similarly obtained desired light beam projecting figure in the case where the either mode oscillation by 4 standing wave states Case.
In addition, the standing wave in above-mentioned phase-modulation layer n04-m is spread by hole shape, it is vertical in face by phase-modulation The corrugated that is obtained on direction and obtain desired light beam projecting pattern.Therefore institute's phase can be obtained without polarization plate The light beam projecting pattern of prestige.The light beam projecting pattern is not only a pair of unimodal light beam (luminous point), additionally it is possible to be word as described above Accord with shape, 2 or more same shape luminous point groups or phase, intensity distribution spatially non-uniform vector beam etc..
In addition, as an example, preferably the refractive index of fundamental region n04-ma is 3.0~3.5, different refractivity region The refractive index of n04-mb is 1.0~3.4.In addition, variant refractive index area n04-mb in the hole of fundamental region n04-ma Mean radius is, for example, 20nm~120nm in the case where 940nm wave band.Pass through the size of variant refractive index area n04-mb It changes and the diffracted intensity towards Z-direction changes.The diffraction efficiency with to different refractivity region n04-mb's The optical bond coefficient κ 1 indicated with coefficient of first order when shape progress Fourier transform is proportional.About optical bond coefficient, For example, on the books in above-mentioned non-patent literature 2.
The configuration pattern having by axis shift-up mode decision different refractivity region n04-mb is utilized to as described above The obtained effect of semiconductor light-emitting elements of phase-modulation layer n04-m be illustrated.All the time, as semiconductor light emitting element Part, it is known to which the center of gravity G1 of variant refractive index area n04-mb leaves ground from the corresponding lattice-site O of imaginary tetragonal Configuration, and there is the structure for rotating angle corresponding with light image around each lattice-site O (referring for example to patent document 1).But It is, if it is possible to realize the positional relationship and the prior art of the center of gravity G1 and each lattice-site O of variant refractive index area n04-mb Different light emitting devices, then the freedom degree of the design of phase-modulation layer n04-m becomes larger, extremely useful.
There is fundamental region n04-ma and refractive index and fundamental region with the phase-modulation layer n04-m of active layer optical bond N04-ma different multiple and different refractive index area n04-mb, in each unit knot as defined in the rectangular coordinate system of s axis and t axis The center of gravity G1 configuration of structure region R, variant refractive index area n04-mb are passing through the lattice-site O of imaginary tetragonal and opposite In on the inclined straight line L of both sides of the s axis He the t axis.Then, the center of gravity G1 of variant refractive index area n04-mb with it is corresponding The distance r (x, y) of lattice-site O is individually set according to target beam projection pattern.In this case, the phase of light beam with Lattice-site O is corresponding at a distance from center of gravity G1 and changes.That is, only passing through the position of change center of gravity G1, it will be able to which control is not from respectively With the phase of the light beam of refractive index area n04-mb outgoing, the light beam projecting pattern being integrally formed can be made to become desired Shape (target beam projection pattern).That is, above-mentioned semiconductor light-emitting elements are respectively S-iPM laser, according to such Structure has and target beam projection pattern phase around each lattice-site O with the center of gravity G1 of variant refractive index area n04-mb The existing structure for the rotation angle answered is the same, can be to relative to the direction inclined direction vertical with the 1st face of output light Export the light beam projecting pattern of arbitrary shape.In such manner, it is possible to provide in axis shift-up mode, variant refractive index area n04- The positional relationship of the center of gravity G1 of mb and each lattice-site O and existing entirely different semiconductor light-emitting elements and semiconductor light emitting mould Block.
Herein, Figure 32 (a) is the figure for indicating the example of the light beam projecting pattern (light image) exported from semiconductor light-emitting elements. The center of Figure 32 (a) corresponds to and intersects with the light-emitting surface of semiconductor light-emitting elements and the axis vertical with light-emitting surface.In addition, Figure 32 It (b) is to indicate to intersect with the light-emitting surface of semiconductor light-emitting elements and the luminous intensity on the section comprising the axis vertical with light-emitting surface Distribution curve.Figure 32 (b) is using FFP optical system (creek pine photonics corporation A3267-12), camera (creek pine photonics Corporation ORCA-05G), laser beam analyzer (creek pine photonics corporation Lepas-12) obtain far field image, to 1344 points × The counting of the longitudinal direction of 1024 points of image data is added up and the figure that is depicted as.In addition, in order to by the most matter of fundamental importance of Figure 32 (a) Number is with 255 standardization, in addition, the intensity ratio of clear ± 1 light, makes 0 light B0 saturation in center.According to Figure 32 (b), Neng Gourong It changes places and understands the intensity difference of 1 light and -1 light.In addition, Figure 33 (a) is to indicate and light beam projecting pattern pair shown in Figure 32 (a) The figure for the phase distribution answered.Figure 33 (b) is the magnified partial view of Figure 33 (a).In Figure 33 (a) and Figure 33 (b), phase-modulation layer The the phase everywhere in n04-m the closer in bright areas more in dark areas closer to 0 ° of phase angle by deep or light expression 360 ° of phase angle.But the central value at phase angle can arbitrarily be set, therefore also might not be in the range of 0 °~360 ° Set phase angle.As shown in Figure 32 (a) and Figure 32 (b), semiconductor light-emitting elements are exported to relative to inclined 1st side of the axis To 1 light comprising the 1st light image part B1 of output and to about the symmetrical 2nd direction output of the axis and the 1st direction and packet Containing -1 light about the axis and the 2nd light image part B2 of the 1st light image part B1 rotational symmetry.Typically, the 1st light image portion 1st quadrant of the B1 in X-Y plane is divided to present, third quadrant of the 2nd light image part B2 in X-Y plane is presented.But according to Purposes there is a situation where using only 1 light without the use of -1 light.In such cases it is preferred to the light quantity of -1 light and 1 time Light is compared and is suppressed smaller.
Figure 34 is the figure for showing schematically the example of light beam projecting pattern of the traveling wave of all directions.In this example embodiment, exist Unit structure region R, enable straight line L relative to the inclination angle of s axis and t axis be 45 °.In the S-iPM laser of regular crystal lattice Phase-modulation layer generates basic traveling wave AU, AD, AR and AL along X-Y plane.Traveling wave AU and AD are along tetragonal Each Bian Zhongxiang Y direction extend side advance light.Traveling wave AU advances to Y-axis positive direction, and traveling wave AD is to Y-axis negative direction It advances.In addition, traveling wave AR and AL are the light that the side extended along each Bian Zhongxiang X-direction of tetragonal is advanced.Traveling wave AR It advances to X-axis positive direction, traveling wave AL advances to X-axis negative direction.In this case, from the traveling wavelength-division of mutually opposing traveling Reversed light beam projecting pattern is not obtained.For example, obtaining light beam projecting pattern only comprising the 2nd light image part B2 from traveling wave AU BU only obtains the light beam projecting pattern BD comprising the 1st light image part B1 from traveling wave AD.Equally, it is only wrapped from traveling wave AR Light beam projecting pattern BR containing the 2nd light image part B2 obtains light beam projecting figure only comprising the 1st light image part B1 from traveling wave AL Case BL.In other words, the traveling wave of mutually opposing traveling each other among, a side become 1 light, another party become -1 light.From The light beam projecting pattern of semiconductor light-emitting elements output is pattern made of these light beam projecting pattern BU, BD, BR and BL overlapping.
The research of people according to the present invention, in the existing semiconductor for rotating different refractivity region around lattice-site In light-emitting component, different refractivity region configuration in nature, centainly comprising mutually opposing traveling traveling wave both sides. That is, being formed in any wave of 4 traveling waves AU, AD, AR and AL of standing wave in existing mode, 1 light and -1 light same amount It presents, further, 0 light can be generated according to the radius of rotational circle (center of gravity in different refractivity region is at a distance from lattice-site). Therefore, it is difficult to keep the generation of each light quantity of 1 light and -1 light poor in principle, it is difficult to selectively reduce a wherein side.Therefore, It is difficult to keep the light quantity of -1 light relatively low relative to the light quantity of 1 light.
Herein, Figure 35 is the determining method of the configuration pattern as above-mentioned different refractivity region n04-mb, indicates to make The figure of rotation mode and traveling wave AU, AD, AR, AL that different refractivity region rotates around lattice-site.To making difference It is difficult to selectively reduce by 1 light and -1 light in the rotation mode that refractive index area n04-mb rotates around lattice-site O The reason of any light be illustrated.(figure in rotation mode is equivalent to relative to the designed phase φ (x, y) on some position 5 rotation angle), 1 as 4 traveling waves considers the traveling wave AU of the positive direction of the t axis of expression in Figure 35 (b).At this point, From geometric relationship, relative to traveling wave AU because becoming rsin φ (x, y) from the deviation of lattice-site O, at The relationship for being (2 π/a) rsin φ (x, y) for phase difference.As a result, phase distribution Φ (x, y) relevant to traveling wave AU (being equivalent to above-mentioned phase distribution P (x, y)) is small so can in the influence of the size due to different refractivity region n04-mb It is Φ (x, y)=exp { j (2 π/a) rsin φ (x, y) } in the case where ignoring its influence.To the 0 of phase distribution Φ (x, y) The contribution of secondary light and ± 1 light be by exp { jn Φ (x, y) } (n: integer) expansion in the case where n=0 and n=± 1 at Point.But when using with mathematical formulae as defined in formula (11) below relevant to the 1st class Bessel function Jn (z) of frequency n When, series expansion can be carried out to phase distribution Φ (x, y), can illustrate each light quantity of 0 light He ± 1 light.
[numerical expression 11]
At this point, 0 light ingredient of phase distribution Φ (x, y) is with J0(2 π r/a) indicates that 1 light ingredient is with J1(2 π r/a) table Show, -1 light ingredient is with J-1(2 π r/a) is indicated.But about ± 1 Bessel function, since there are J1(x)=- J-1 (x) relationship, so ± 1 light ingredient is equal in magnitude.Herein, the row as 1 consideration Y-axis positive direction of 4 traveling waves Into wave AU, but other 3 waves (traveling wave AD, AR, AL) also set up same relationship, ± 1 light ingredient it is equal in magnitude.According to On discussion, it is difficult in principle in the existing mode for rotating different refractivity region n04-mb around lattice-site O So that the light quantity generation of ± 1 light ingredient is poor.
In contrast, according to the phase for the configuration pattern for determining different refractivity region n04-mb by axis shift-up mode Modulating layer n04-m, it is poor to generate relative to single traveling wave in each light quantity of 1 light and -1 light, for example, tiltangleθ be 45 °, In the case where 135 °, 225 ° or 315 °, displacement R0Closer to the upper limit value of above-mentioned numerical expression (9), can more obtain ideal Phase distribution.As a result, 0 light is reduced, in each traveling wave AU, AD, AR and AL, 1 light and -1 time are selectively reduced One side of light.Therefore, by selectively reducing either the traveling wave of mutually opposing traveling, can make in principle 1 time It is poor that the light quantity of light and -1 light generates.
Figure 36 is the determining method of the configuration pattern as different refractivity region n04-mb, indicate by lattice-site and Relative to make different refractivity region mobile on the inclined axis of tetragonal axis shift-up mode (traveling wave AU, AD, AR, The figure of AL.As the center of gravity G1 of different refractivity region n04-mb by lattice-site O and relative to regulation unit structure region R Shown in the Figure 36 (a) moved on the inclined straight line L of the both sides of s axis and t axis, illustrating can be selectively in axis shift-up mode The reasons why reducing either 1 light and -1 light.Relative to the designed phase φ (x, y) of unit structure region R (x, y), make The traveling wave AU of the positive direction of y-axis shown in 1 consideration Figure 36 (b) for 4 traveling waves.At this point, from geometric relationship It sets out, relative to traveling wave AU because becoming rsin θ { φ (x, y)-φ from the deviation of lattice-site O0}/π, so becoming phase Potential difference is (2 π/a) rsin θ { φ (x, y)-φ0The relationship of }/π.Illustrate to enable tiltangleθ=45 °, phase here for simplification Parallactic angle φ0=0 °.At this point, phase distribution Φ (x, y) relevant to traveling wave AU is due to different refractivity region n04-mb's The influence of size is small and can ignore that in the case that it is influenced be formula below (12).
[numerical expression 12]
Contribution to 0 light and ± 1 light of phase distribution Φ (x, y) is to open up by exp { n Φ (x, y) } (n: integer) The ingredient of n=0 and n=± 1 in the case where opening.But when to function f (z) the progress Luo Lang by following formula (13) expressions (Laurent) when series expansion, with the establishment of mathematical formulae as defined in formula below (14).
[numerical expression 13]
F (z)=Zc…(13)
Wherein,
0 < | c | < 1
[numerical expression 14]
Herein, sinc (x)=x/sin (x).It, can be to phase when use mathematical formulae as defined in above-mentioned formula (14) It is distributed Φ (x, y) and carries out series expansion, can illustrate each light quantity of 0 light He ± 1 light.At this point, if paying attention to above-mentioned formula (14) absolute value of exponential term exp { j π (c-n) } is 1 this point, then the size of the 0 of phase distribution Φ (x, y) time light ingredient It is indicated with formula below (15).
[numerical expression 15]
In addition, the size of 1 light ingredient of phase distribution Φ (x, y) is indicated with formula below (16).
[numerical expression 16]
The size of -1 light ingredient of phase distribution Φ (x, y) is indicated with formula below (17).
[numerical expression 17]
Then, in above-mentioned formula (15)~(17), the case where in addition to meeting with condition as defined in formula below (18), 1 0 light and -1 light ingredient are presented other than secondary light ingredient.But the size of ± 1 light ingredient is not equal to each other.
[numerical expression 18]
In the above description, the case where 1 as 4 traveling waves considers the traveling wave AU of Y-axis positive direction, but to it There is also same relationships for its 3 wave (traveling wave AD, AR, AL), and it is poor to generate in the size of ± 1 light ingredient.It is begged for according to above By passing through lattice-site O and the axis moved from the inclined straight line L of tetragonal moves up according to different refractivity region n04-mb Position mode can be such that the light quantity of ± 1 light ingredient generates poor in principle.Therefore, -1 light or 1 light be can reduce in principle And selectively only take out desired light image (the 1st light image part B1 or the 2nd light image part B2).In above-mentioned Figure 32 (b), Also the difference of intensity can be generated between 1 light and -1 light.
In addition, (s axis is formed the tiltangleθ of the straight line L of unit structure region R with straight line L in axis shift-up mode Angle) it can also be fixed in phase-modulation layer n04-m.Thereby, it is possible to be easy to carry out different refractivity region n04-mb's The design of the configuration of center of gravity G1.In addition, in this case, inclination angle may be 45 °, 135 °, 225 ° or 315 °.As a result, Along 4 basic waves that tetragonal is advanced (in the case where X-axis and Y-axis of the setting along tetragonal, to X-axis positive direction row Into light, the light advanced to X-axis negative direction, the light advanced to Y-axis positive direction and the light advanced to Y-axis negative direction) can be impartial Ground facilitates light image.Further, in the case where tiltangleθ is 45 °, 135 °, 225 ° or 315 °, by selecting appropriate band edge The direction of mode, the electromagnetic field on straight line L is consistent facing one direction, can successively obtain rectilinearly polarized light.As such One example of mode has Mode A, B shown in the Fig.3 of above-mentioned non-patent literature 3.In addition, tiltangleθ be 0 °, In the case where 90 °, 180 ° or 270 °, to Y direction or a pair of of row of X-direction traveling in 4 traveling waves AU, AD, AR and AL It is unprofitable to 1 light (signal light) into wave, so being difficult to improve the efficiency of signal light.
In addition, active layer with the positional relationship of phase-modulation layer n04-m as above-mentioned rotation mode, even if along Z axis Direction becomes reversed, also being capable of easily optical bond.
Figure 37 and Figure 38 is the figure of the various examples (axis shift-up mode) for the flat shape for indicating different refractivity region. In the above example, the shape of the different refractivity region n04-mb on X-Y plane is circle.But different refractivity area Domain n04-mb also can have the shape other than circle.For example, the shape of different refractivity region n04-mb can also have mirror As symmetry (line symmetry).Herein, mirror symmetry (line symmetry) refers to, clips some straight line along X-Y plane, position It is reflected in the flat shape of the different refractivity region n04-mb of the side of the straight line from the different of the other side for being located at the straight line The flat shape of rate region n04-mb can become mutually mirror symmetry (line is symmetrical).As with mirror symmetry, (line is symmetrical Property) shape, such as square shown in positive round, Figure 37 (b) shown in Figure 37 (a) can be enumerated, positive six shown in Figure 37 (c) Octagon shown in side shape, Figure 37 (d), rectangle and Figure 37 shown in positive ten hexagon, Figure 37 (f) shown in Figure 37 (e) (g) ellipse etc. shown in.In this way, the shape of different refractivity region n04-mb on an x-y plane has mirror symmetry (line Symmetry) in the case where, in each unit structure region R of the imaginary tetragonal of phase-modulation layer n04-m, because being letter Single shape, so the side of the center of gravity G1 of corresponding different refractivity region n04-mb can accurately be determined from lattice-site O To and position.That is, can be realized the patterning under high precision.
In addition, the shape of the different refractivity region n04-mb on X-Y plane may be the rotation pair without 180 ° The shape of title property.As such shape, such as isosceles shown in equilateral triangle, Figure 38 (b) shown in Figure 38 (a) can be enumerated Ovum type shape shown in 2 circles shown in right angled triangle, Figure 38 (c) or the shape of elliptical a part overlapping, Figure 38 (d), Isosceles triangle shown in tear-drop type shape, Figure 38 (f) shown in Figure 38 (e), arrowhead-shaped shape, Figure 38 shown in Figure 38 (g) (h) shape that trapezoidal shown in, 2 rectangles shown in pentagon, Figure 38 (j) shown in Figure 38 (i) a part overlap each other The shape etc. of mirror symmetry is overlapped each other and not had with a part of 2 rectangles shown in Figure 38 (k).In addition, ovum type shape Shape is so that the size of the short-axis direction near an elliptical end along long axis is less than short near another end Shape obtained from the mode of the size of axis direction deforms.Tear-drop type shape is by an elliptical Leading Edge Deformation along long axis At the shape of the end along long axis direction point outstanding.Arrowhead-shaped shape be rectangle a side triangular shape recess, its The sharp shape of an opposite side triangular shape.In this way, by making the different refractivity region n04-mb on X-Y plane Shape do not have 180 ° of rotational symmetry, higher light output can be obtained.In addition, such as Figure 38 (j) and Figure 38 (k) institute Showing, different refractivity region n04-mb can also be made of multiple elements, in this case, different refractivity region n04-m Center of gravity G1 be multiple constituent elements synthesis center of gravity.
Figure 39 is the figure of another example (axis shift-up mode) of the flat shape for indicating different refractivity region.This Outside, Figure 40 is the figure for indicating the 2nd variation of phase-modulation layer of Figure 28.
In the example shown in the Figure 39 and Figure 40, variant refractive index area n04-mb be made of multiple element 15b, 15c is constituted.Center of gravity G1 is the synthesis center of gravity of all constituent elements, is located on straight line L.The both sides of constituent element 15b, 15c have 2nd refractive index different from the 1st refractive index of fundamental region n04-ma.The both sides of constituent element 15b, 15c both can be hole, Compound semiconductor can also be embedded in hole and constitute.In each unit structure region R, constituent element 15c is wanted with composition Plain 15b is arranged with corresponding respectively.Then, the center of gravity G1 for merging constituent element 15b, 15c is located at transversal composition imagination Tetragonal unit structure region R lattice-site O straight line L on.In addition, any constituent element 15b, 15c is included in In the range of the unit structure region R for constituting imaginary tetragonal.Unit structure region R becomes by by imaginary tetragonal Lattice-site between two equal parts straight line surround region.
The flat shape of constituent element 15c is, for example, circle, but can the various examples as shown in Figure 37 and Figure 38, With various shapes.Figure 39 (a)~Figure 39 (k) indicates the shape of constituent element 15b, 15c on X-Y plane and opposite The example of relationship.Figure 39 (a) and Figure 39 (b) indicates that the both sides of constituent element 15b, 15c have the mode of the figure of same shape. Figure 39 (c) and Figure 39 (d) indicates that the both sides of constituent element 15b, 15c have the figure of same shape, mutual a part mutually The mode of overlapping.Figure 39 (e) indicates that the both sides of constituent element 15b, 15c have the figure of same shape, appoint by each lattice-site The mode of distance between the center of gravity of meaning ground setting constituent element 15b, 15c.Figure 39 (f) indicates that constituent element 15b, 15c has phase The mutually mode of the figure of different shapes.Figure 39 (g) indicate constituent element 15b, 15c have mutually different shape figure, In the way of the distance between the center of gravity that each lattice-site arbitrarily sets constituent element 15b, 15c.
In addition it is also possible to constitute a part of different refractivity region n04-mb as shown in Figure 39 (h)~Figure 39 (k) Constituent element 15b is made of 2 regions 15b1,15b2 being separated from each other.Then, it can also arbitrarily be set by each lattice-site The center of gravity (center of gravity for being equivalent to single constituent element 15b) that region 15b1,15b2 are merged and the center of gravity of constituent element 15c Distance.In addition, in this case, it can also be as shown in Figure 39 (h), region 15b1,15b2 and constituent element 15c have mutually The figure of same shape.Alternatively, can also be as shown in Figure 39 (i), 2 figures in region 15b1,15b2 and constituent element 15c It is different from other figures.Further, it is also possible to as shown in Figure 39 (j), not only the straight line of connecting area 15b1,15b2 relative to The angle of the s axis and angle relative to s axis of constituent element 15c is also arbitrarily set by each lattice-site.Further, it is also possible to As shown in Figure 39 (k), region 15b1,15b2 and constituent element 15c are in the state of maintaining mutually the same relative angle, by every A lattice-site arbitrarily sets the angle relative to s axis of the straight line of connecting area 15b1,15b2.
In addition, the flat shape of different refractivity region n04-mb can also be mutually the same between the R of unit structure region. That is, being also possible to different refractivity region n04-mb has identical figure in all unit structure region R, can be grasped by translation Work or translation and rotation process, it is overlapped between lattice-site.In this case, it is able to suppress in light beam projecting pattern Noise light and 0 light as noise generation.Alternatively, the flat shape of different refractivity region n04-mb also might not Identical between the R of unit structure region, such as can also be as shown in figure 40, shape be each other between adjacent unit structure region R Together.Additionally, it is preferred that as shown in the example of Figure 36 (a) and Figure 36 (b), so that passing through under the either case of Figure 37~Figure 40 The center of the straight line L of each lattice-site O is set with the consistent mode of lattice-site O.
As described above, determining the phase-modulation of the configuration pattern in different refractivity region even by axis shift-up mode The structure of layer also can be obtained properly and apply the phase for configuring pattern for determining different refractivity region by rotation mode The identical effect of embodiment of position modulating layer.
The explanation of symbol
1,2,3,1B ... light emitting semiconductor module；11,21,31,11B ... supporting substrates；100-m (integer that m is positive), 200-m, 300-m, 100B-m ... semiconductor light-emitting elements；The 1st clad of 102-m, 202-m, 302-m, 102B-m ...；103-m, 203-m, 303-m, 103B-m ... active layer；104-m, 204-m, 304-m, 104B-m ... phase-modulation layer；104-ma, 204- The fundamental region ma, 304-ma, 104B-ma ...；The multiple and different refractive index areas 104-mb, 204-mb, 304-mb, 104B-mb ...； 106,206,306,106B-m ... the 2nd clads；The 2nd surface side electrode of 108-m, 208-m, 308-m, 108B-m ...；110-m, The 1st surface side electrode of 210-m, 310-m, 110B-m ....

Claims (10)

1. a kind of light emitting semiconductor module, which is characterized in that
Include:
It is respectively provided with the 1st face of output light and multiple semiconductor light-emitting elements in 2nd face opposite with the 1st face；With
Supporting substrates have the 3rd face, 4th face opposite with the 3rd face and distinguish with the multiple semiconductor light-emitting elements Corresponding multiple driving electrodes of the configuration on the 3rd face, in the 2nd face of the multiple semiconductor light-emitting elements and described the Across the multiple driving electrodes and with respect in the state of, the multiple semiconductor light-emitting elements are positioned in the 3rd face in 3 faces On,
The multiple semiconductor light-emitting elements respectively include:
Active layer between the 1st face and the 2nd face；
Phase-modulation layer, between the 1st face and the 2nd face, and the active layer optical bond, including have the The fundamental region of 1 refractive index is separately positioned in the fundamental region and has 2nd folding different from the 1st refractive index Penetrate multiple and different refractive index areas of rate；
1st clad is configured relative to the laminate structure for including at least the active layer and the phase-modulation layer in institute State the side that the 1st face is located at；
2nd clad configures the side being located in the 2nd face relative to the laminate structure；
1st surface side electrode configures the side being located in the 1st face relative to the 1st clad；With
2nd surface side electrode configures the side being located in the 2nd face relative to the 2nd clad, with the multiple drive Corresponding driving electrodes connection in moving electrode,
The multiple different refractivity region is respectively according to for making as electric from the corresponding driving electrodes supply driving From the light beam projecting pattern of the projection pattern of the light of the 1st face output and as the projection model of the light beam projecting pattern when stream Consistent configuration pattern is distinguished by the light beam projecting region and target beam projection pattern enclosed and target beam view field, and configuration exists Specified position in the fundamental region,
The configuration pattern is defined as,
By with the 1st face the consistent Z axis of normal direction and with the phase comprising the multiple different refractivity region Position modulating layer a face is consistent, in XYZ rectangular coordinate system as defined in X-Y plane comprising mutually orthogonal X-axis and Y-axis, The imaginary pros being made of M1 × N1 unit structure region R for being respectively provided with square shape are set on the X-Y plane When lattice, wherein the integer that M1 is 1 or more, the integer that N1 is 1 or more,
In the specific unit structure area on the X-Y plane coordinates component y of coordinates component x and Y direction by X-direction In domain R (x, y), it is located at the center of gravity G1 in the different refractivity region in the unit structure region R (x, y) and becomes the unit Lattice-site O (x, y) the separation distance r at the center of structural region R (x, y), and from lattice-site O (x, y) the Xiang Suoshu center of gravity The vector of G1 is towards specific direction, wherein and x is 1 or more M1 integer below, and y is 1 or more N1 integer below,
The multiple semiconductor light-emitting elements include regulation towards the light of the direction of travel of the light of the target beam view field Beam projecting direction, the target beam projection pattern 1st semiconductor light emitting element different at least either in emission wavelength Part and the 2nd semiconductor light-emitting elements.
2. light emitting semiconductor module as described in claim 1, which is characterized in that
1st light beam projecting direction of the 1st semiconductor light-emitting elements and the 2nd light beam of the 2nd semiconductor light-emitting elements are thrown Shadow direction is different,
1st and the 2nd light beam projecting direction is with the respective target beam projected area of the 1st and the 2nd semiconductor light-emitting elements The substantially consistent mode in domain is set.
3. light emitting semiconductor module as claimed in claim 1 or 2, which is characterized in that
When the lattice constant for enabling the imaginary tetragonal is a, the distance r meets 0≤r≤0.3a,
Coordinate (x, y, z) in the XYZ rectangular coordinate system is relative to by the length d1 of radius vector, the inclination angle from the Z axis θtiltWith the specific rotation angle θ from the X-axis on the X-Y planerotDefined spherical coordinate (d1, θtilt, θrot) full It is enough the relationship that formula below (1)~formula (3) indicates,
[numerical expression 1]
X=d1 sin θtiltcosθrot…(1)
[numerical expression 2]
Y=d1 sin θtiltsinθrot…(2)
[numerical expression 3]
Z=d1 cos θtilt …(3)
Enable the target beam projection pattern for towards by angle, θtiltAnd θrotWhen the set of the bright spot in defined direction, the angle Spend θtiltAnd θrotIt is converted into as the seat on the Kx axis corresponding with the X-axis of standardization wave number as defined in formula below (4) Scale value kxThe corresponding with the Y-axis and orthogonal with the Kx axis of wave number is standardized with as by formula below (5) is defined Coordinate value k on Ky axisy,
[numerical expression 4]
[numerical expression 5]
A: the lattice constant of the imaginary tetragonal
λ: the oscillation wavelength of the semiconductor light-emitting elements
By in the wave number space of the Kx axis and the Ky axis convention, the specific wave comprising the target beam projection pattern Number ranges respectively by square M2 × N2 image-region FR constitutes, wherein M2 for 1 or more integer, N2 for 1 or more it is whole Number,
In the wave number space, by will be by the coordinates component k of Kx axis directionxWith the coordinates component k of Ky axis directionySpecifically Image-region FR (kx, ky) respectively two dimensional inverse fourier transform at the unit structure region R (x, y) on the X-Y plane and Obtained complex amplitude F (x, y) is assigned using j as imaginary unit by formula below (6), wherein kxIt is below whole for 1 or more M2 Number, kyFor 1 or more N2 integer below,
[numerical expression 6]
In the unit structure region R (x, y), enabling term amplitude is A (x, y) and when to enable phase term be P (x, y), described multiple Amplitude F (x, y) by formula below (7) provide,
[numerical expression 7]
F (x, y)=A (x, y) × exp [jP (x, y)] ... (7)
And the unit structure region R (x, y) by it is parallel respectively with the X-axis and the Y-axis and the lattice-site O (x, Y) on when orthogonal s axis and t axis convention,
The phase-modulation layer is configured to,
Link the lattice-site O (x, y) and the line segment of the center of gravity G1 in the corresponding different refractivity region and s axis institute at Angle φ (x, y) meet the corresponding different refractivity region of the relationship for becoming following formula and configure in the unit structure In region R (x, y),
φ (x, y)=C × P (x, y)+B
C: proportionality constant
B: arbitrary constant.
4. light emitting semiconductor module as claimed in claim 1 or 2, which is characterized in that
Coordinate (x, y, z) in the XYZ rectangular coordinate system is relative to by the length d1 of radius vector, the inclination angle from the Z axis θtiltWith the specific rotation angle θ from the X-axis on the X-Y planerotDefined spherical coordinate (d1, θtilt, θrot) full It is enough the relationship that formula below (8)~formula (10) indicates,
[numerical expression 8]
X=d1 sin θtiltcosθrot…(8)
[numerical expression 9]
Y=d1 sin θtiltsinθrot…(9)
[numerical expression 10]
Z=d1 cos θtilt…(10)
Enable the target beam projection pattern for towards by angle, θtiltAnd θrotWhen the set of the bright spot in defined direction, the angle Spend θtiltAnd θrotIt is converted into as on the Kx axis corresponding with the X-axis of standardization wave number as defined in formula below (11) Coordinate value kxThe corresponding with the Y-axis and orthogonal with the Kx axis of wave number is standardized with as by formula below (12) is defined Ky axis on coordinate value ky,
[numerical expression 11]
[numerical expression 12]
A: the lattice constant of the imaginary tetragonal
λ: the oscillation wavelength of the semiconductor light-emitting elements
By in the wave number space of the Kx axis and the Ky axis convention, the specific wave comprising the target beam projection pattern Number ranges respectively by square M2 × N2 image-region FR constitutes, wherein M2 for 1 or more integer, N2 for 1 or more it is whole Number,
In the wave number space, by will be by the coordinates component k of Kx axis directionxWith the coordinates component k of Ky axis directionySpecifically Image-region FR (kx, ky) respectively two dimensional inverse fourier transform at the unit structure region R (x, y) on the X-Y plane and Obtained complex amplitude F (x, y) is assigned using j as imaginary unit by formula below (13), wherein kxIt is below whole for 1 or more M2 Number, kyFor 1 or more N2 integer below,
[numerical expression 13]
In the unit structure region R (x, y), enabling term amplitude is A (x, y) and when to enable phase term be P (x, y), described multiple Amplitude F (x, y) by formula below (14) provide,
[numerical expression 14]
F (x, y)=A (x, y) × exp [jP (x, y)] ... (14)
And the unit structure region R (x, y) by it is parallel respectively with the X-axis and the Y-axis and the lattice-site O (x, Y) on when orthogonal s axis and t axis convention,
The phase-modulation layer is configured to,
The center of gravity G1 in the corresponding different refractivity region be located at by the lattice-site O (x, y), from the s axis tilt Straight line on and the lattice-site O (x, y) to the center of gravity G1 in the corresponding different refractivity region until line segment length r (x, y) meet the corresponding different refractivity region configuration of the relationship for becoming following formula the unit structure region R (x, Y) in,
R (x, y)=C × (P (x, y)-P0)
C: proportionality constant
P0: arbitrary constant.
5. the light emitting semiconductor module as described in any one of Claims 1 to 4, which is characterized in that
At least one semiconductor in the multiple semiconductor light-emitting elements for including the 1st and the 2nd semiconductor light-emitting elements In light-emitting component,
In the whole in the multiple different refractivity region in the phase-modulation layer, it is prescribed on the X-Y plane At least appointing in shape, the area being prescribed on the X-Y plane and the distance r being prescribed on the X-Y plane One is consistent.
6. the light emitting semiconductor module as described in any one of Claims 1 to 5, which is characterized in that
Shape on the multiple different refractivity region, described X-Y plane is any shape in following shape: positive round, Square, regular hexagon, octagon, positive ten hexagon, equilateral triangle, isosceles right triangle, rectangle, ellipse, 2 circles Or the shape, another by being less than with the size of the short-axis direction near an end along its long axis of elliptical a part overlapping The mode of the size of the short-axis direction near one end by ovum type shape obtained from ovalizing deflection, by will be along it An elliptical Leading Edge Deformation for long axis is tear-drop type shape, isoceles triangle obtained from the end of long axis direction point outstanding Shape, one of rectangle while constitute the notch of triangle and with it is one while opposite side constitute triangle protrusion arrow The shape that a part of head dummy shape, trapezoidal, pentagon and 2 rectangles is overlapped.
7. the light emitting semiconductor module as described in any one of claim 1~6, which is characterized in that
In at least one semiconductor light-emitting elements in the multiple semiconductor light-emitting elements,
The phase-modulation layer includes:
The inside region being made of M1 × N1 unit structure region R；With
Lateral area is arranged in a manner of surrounding the periphery of the inside region, includes multiple periphery lattice-site different refractivities Region, multiple periphery lattice-site different refractivity region with by the periphery of the imaginary tetragonal setting and institute State the identical lattice structure of imaginary tetragonal and the mode that is overlapped respectively of lattice-site in defined amplification tetragonal is matched It sets.
8. the light emitting semiconductor module as described in any one of claim 1~7, which is characterized in that
In at least one semiconductor light-emitting elements in the multiple semiconductor light-emitting elements,
The phase-modulation layer includes the multiple lattice-site differences refraction for being arranged respectively at M1 × N1 unit structure region R Rate region, the lattice of multiple lattice-site different refractivity region respective center of gravity G2 and corresponding unit structure region R Point O is consistent.
9. a kind of control method of light emitting semiconductor module, which is characterized in that
Prepare light emitting semiconductor module described in any one of claim 1~8,
From include the 1st and the 2nd semiconductor light-emitting elements the multiple semiconductor light-emitting elements in, select 1 or 1 with Semiconductor-on-insulator light-emitting component as driven object,
The control pattern individually set according to the selected semiconductor light-emitting elements are respectively relative to, by driving circuit, Individually control the respective movement of the selected semiconductor light-emitting elements.
10. the control method of light emitting semiconductor module as claimed in claim 9, which is characterized in that
The control pattern, which includes that the selected semiconductor light-emitting elements are respective, at least defines driving opportunity along time shaft With the information of driving time.
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