CN110380700A - Preamplifier, MEMS sensor reading circuit and MEMS sensor system - Google Patents
Preamplifier, MEMS sensor reading circuit and MEMS sensor system Download PDFInfo
- Publication number
- CN110380700A CN110380700A CN201910781595.1A CN201910781595A CN110380700A CN 110380700 A CN110380700 A CN 110380700A CN 201910781595 A CN201910781595 A CN 201910781595A CN 110380700 A CN110380700 A CN 110380700A
- Authority
- CN
- China
- Prior art keywords
- switch
- circuit
- current
- reading
- mems sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses a kind of preamplifier, MEMS sensor reading circuit and MEMS sensor systems, the preamplifier includes the first operational amplifier, first operational amplifier includes the first biasing circuit, and the preamplifier further includes the first synchronism switching current supplying circuit；The first synchronism switching current supplying circuit is used to provide the first bias current to first biasing circuit, and first bias current is less than the current value that first bias current works in the reading circuit reading stage in the current value that the reading circuit works in the clearing stage.Preamplifier, MEMS sensor reading circuit and MEMS sensor system provided by the invention, while guaranteeing that the reading circuit has low noise, reduce the power consumption of the reading circuit, to reduce the power consumption of MEMS sensor system, the contradiction of MEMS sensor system low-power consumption and low noise is efficiently solved.
Description
Technical field
The present invention relates to micro-electromechanical system fields, and in particular to a kind of preamplifier, MEMS sensor read electricity
Road and MEMS sensor system.
Background technique
Under the further development of artificial intelligence, big data and Internet of Things, data collection is particularly important, and with
The closely bound up sensor technology of data collection is also rapidly developed.The especially development of Internet of Things, so that sensor produces
Product demand increases considerably, and center of gravity is also increasingly turned to technology content higher MEMS (MEMS, Micro-Electro-
Mechanical Systems) sensor field.MEMS is to collect micro sensing using traditional semiconductor process and materials
Device, microactrator, micromechanics mechanism, signal processing and control circuit, high-performance electronic integrated device, interface, communication and power supply
Deng in the microdevice or system of one, has many advantages, such as small size, low cost, integrated.
Fig. 1 is the structural schematic diagram of common MEMS sensor system, and the MEMS sensor system includes MEMS sensing
Device 11 and reading circuit.The MEMS sensor 11 is micro- for being converted to the measurands such as pressure, acceleration and flow
Weak electric signal output, a duty cycle of the reading circuit can be divided into clearing stage and the reading stage two work
Stage: when working in the clearing stage, the reading circuit stores offset voltage and input terminal noise；It works in and reads rank
Duan Shi, the reading circuit are read and the external world for cutting the offset voltage and the input terminal noise from read output signal
The proportional signal of transducing signal.The reading circuit generally includes preamplifier 12 and signal conditioning circuit 13: before described
Amplifier 12 is set to be made of the first operational amplifier OPA1, the first bias current sources Ib1 and some other components, for pair
The output signal of the MEMS sensor 11 amplifies processing；The signal conditioning circuit 13 is by M second operational amplifier
OPA2, M the second bias current sources Ib2 and some other components are constituted, for the output to the preamplifier 12
Signal is filtered and/or the processing such as analog-to-digital conversion, wherein the second operational amplifier OPA2 and second bias current
Source Ib2 is corresponded, and M is positive integer.The signal conditioning circuit 13 can be analog circuit, be also possible to modulus mixing electricity
It is micro- to generally include the ratio being made of the M second operational amplifier OPA2 and M the second bias current sources Ib2 for road
Divide device, integrator or proportional integral derivative device etc..
Further, the first operational amplifier OPA1 and the second operational amplifier OPA2 generally include biasing circuit
And amplifying circuits at different levels.In the preamplifier 12, the first bias current sources Ib1 is used for first operation
Amplifier OPA1 provides the first bias current, and the first biasing circuit in the first operational amplifier OPA1 passes through the side such as mirror image
First bias current is converted to the amplifying circuits at different levels guaranteed in the first operational amplifier OPA1 and worked normally by formula
Electric current；In the signal conditioning circuit 13, the second bias current sources Ib2 is used for corresponding second operational amplifier
OPA2 provides the second bias current, and the second biasing circuit in the second operational amplifier OPA2 is by modes such as mirror images by institute
It states the second bias current and is converted to the electric current for guaranteeing that the amplifying circuits at different levels in the second operational amplifier OPA2 work normally.
Input stage amplification in order to reduce the noise of the MEMS sensor system, in the first operational amplifier OPA1
Input in circuit is arranged very big to the size needs of pipe.And input and be arranged bigger to the size of pipe, the MEMS sensing
The power consumption of device system can also increase accordingly.Therefore, existing MEMS sensor system can not meet low-power consumption and low noise simultaneously
Demand.Especially in the case where MEMS sensor loads biggish situation, low-power consumption and low noise contradiction are especially prominent.
Summary of the invention
To be solved by this invention is that existing MEMS sensor system can not meet low-power consumption and low noise demand simultaneously
The problem of.
The present invention is achieved through the following technical solutions:
A kind of preamplifier is applied to MEMS sensor reading circuit, including the first operational amplifier, first fortune
Calculating amplifier includes the first biasing circuit, and the preamplifier further includes the first synchronism switching current supplying circuit；
The first synchronism switching current supplying circuit is used to provide the first bias current, institute to first biasing circuit
It states the first bias current and is less than first bias current described in the current value that the reading circuit works in the clearing stage
Reading circuit works in the current value in reading stage.
Optionally, the first synchronism switching current supplying circuit includes reference current source and N number of current-controlled switch, N
For the integer not less than 2；
The reference current source for exporting N number of reference current, open with N number of current control by N number of reference current
It closes and corresponds；
One end of n-th of current-controlled switch is for receiving n-th of reference current, the control of n-th of current-controlled switch
End is connected and for receiving n-th of switch control signal, the other end of N number of current-controlled switch as the synchronism switching
The output end of current supplying circuit, 1≤n≤N and n are integer.
Optionally, the preamplifier further includes the first signal generating circuit；
First signal generating circuit is for generating the switch control signal.
Optionally, the preamplifier further includes first switch, second switch, third switch, the 4th switch, the 5th opens
Pass, the 6th switch, the 7th switch and feedback capacity；
For receiving the first reference voltage, described second is opened for one end of the first switch and one end of third switch
One end of pass and one end of the 4th switch are for receiving the second reference voltage, the other end of the first switch and described the
One fixed electrode of the other end connection MEMS sensor of two switches, the other end of the third switch and the 4th switch
The other end connect another of the MEMS sensor and fix electrode, the voltage value of first reference voltage is not less than 0V,
The voltage value of second reference voltage is not more than 0V；
The inverting input terminal of first operational amplifier, it is described 5th switch one end and the feedback capacity one
End connects the target of the MEMS sensor, the non-inverting input terminal ground connection of first operational amplifier, first fortune
The output end for calculating amplifier connects the other end of the 5th switch and one end of the 6th switch and as the preceding storing
The output end of big device；
The other end of the feedback capacity connects the other end of the 6th switch and one end of the 7th switch, described
The other end ground connection of 7th switch；
The control terminal of the control terminal of the first switch, the control terminal of the 4th switch and the 6th switch is used for
Receive first control signal, the control of the control terminal of the second switch, the control terminal of third switch, the 5th switch
The control terminal of end and the 7th switch is for receiving second control signal.
Optionally, the MEMS sensor reading circuit further includes phase compensation unit；
The phase compensation unit includes the 8th switch and compensating electric capacity；
One end of 8th switch connects the output end of the operational amplifier, the other end connection of the 8th switch
One end of the compensating electric capacity, the control terminal of the 8th switch is for receiving the second control signal, the compensating electric capacity
The other end ground connection.
Optionally, the preamplifier further includes phase compensation unit, and the phase compensation unit includes the 8th switch
And compensating electric capacity；
One end of 8th switch connects the output end of first operational amplifier, the other end of the 8th switch
One end of the compensating electric capacity is connected, the control terminal of the 8th switch is for receiving the second control signal, the compensation
The other end of capacitor is grounded.
Optionally, the preamplifier further includes the 9th switch；
The inverting input terminal of first operational amplifier, it is described 5th switch one end and the feedback capacity one
End connects the target of the MEMS sensor by the 9th switch, and the control terminal of the 9th switch is for receiving institute
State first control signal.
Optionally, the preamplifier further includes second signal generation circuit；
The second signal generation circuit is for generating the first control signal and the second control signal.
Based on same inventive concept, the present invention also provides a kind of MEMS sensor reading circuits, including signal condition electricity
Road and above-mentioned preamplifier.
Optionally, the signal conditioning circuit includes that M second operational amplifier and M the second synchronism switching electric currents provide
Circuit, the second operational amplifier and the second synchronism switching current supplying circuit correspond, and M is positive integer；
The second operational amplifier includes the second biasing circuit；
The second synchronism switching current supplying circuit is used to provide the second bias current to corresponding second biasing circuit,
Second bias current is less than second bias current in institute in the current value that the reading circuit works in the clearing stage
State the current value that reading circuit works in the reading stage.
Optionally, the MEMS sensor reading circuit further includes feed circuit；
First bias current works in the current value in clearing stage partially no more than described first in the reading circuit
The current value that electric current works in feedback stage in the reading circuit is set, and first bias current is in the reading circuit work
The current value for making in feedback stage works in the electric current in reading stage no more than first bias current in the reading circuit
Value；
Second bias current works in the current value in clearing stage partially no more than described second in the reading circuit
The current value that electric current works in feedback stage in the reading circuit is set, and second bias current is in the reading circuit work
The current value for making in feedback stage works in the electric current in reading stage no more than second bias current in the reading circuit
Value.
Based on same inventive concept, the present invention also provides a kind of MEMS sensor systems, including MEMS sensor, also wrap
Include above-mentioned MEMS sensor reading circuit.
Compared with prior art, the present invention having the following advantages and benefits:
Preamplifier, MEMS sensor reading circuit and MEMS sensor system provided by the invention, it is described preposition
Amplifier includes the first operational amplifier and the first synchronism switching current supplying circuit, is provided by the first synchronism switching electric current
First biasing circuit of the circuit into first operational amplifier provides the first bias current.Due to first bias current
It is less than first bias current in the current value that the reading circuit works in the clearing stage to work in the reading circuit
The current value in reading stage, it may be assumed that the first synchronism switching current supplying circuit works in the reading stage in the reading circuit
Big bias current is provided to first biasing circuit, so that first biasing circuit is by modes such as mirror images by described
One bias current is converted to big electric current, guarantees that first operational amplifier can drive big load capacitance；Described first
Synchronism switching current supplying circuit the reading circuit work in the clearing stage provide to first biasing circuit it is small inclined
Electric current is set, so that first bias current is converted to small electric current by modes such as mirror images by first biasing circuit, is protected
It demonstrate,proves first operational amplifier and is able to maintain that normal working condition, meet the low-power consumption demand of system.Therefore, this hair
Preamplifier, MEMS sensor reading circuit and the MEMS sensor system of bright offer, eliminate low noise and low-power consumption
The contradiction that can not meet simultaneously, while guaranteeing that the preamplifier has low noise, so that the function of the preamplifier
Consumption is greatly lowered.By reasonably controlling, the power consumption of preamplifier provided by the invention can be reduced to three points of original power consumption
One of, it is even lower.
Detailed description of the invention
Attached drawing described herein is used to provide to further understand the embodiment of the present invention, constitutes one of the application
Point, do not constitute the restriction to the embodiment of the present invention.In the accompanying drawings:
Fig. 1 is the structural schematic diagram of common MEMS sensor system；
Fig. 2 is the partial structure diagram of the preamplifier of the embodiment of the present invention；
Fig. 3 is the electrical block diagram of the first synchronism switching current supplying circuit of the embodiment of the present invention；
Fig. 4 is the electrical block diagram of the preamplifier of an embodiment of the present invention；
Fig. 5 is the electrical block diagram of the preamplifier of another embodiment of the invention；
Fig. 6 is the electrical block diagram of the preamplifier of another embodiment of the present invention；
Fig. 7 is the electrical block diagram of the preamplifier of another embodiment of the invention；
Fig. 8 is the electrical block diagram of the MEMS sensor system of an embodiment of the present invention；
Fig. 9 is the schematic diagram of the control signal of MEMS sensor system shown in Fig. 8；
Figure 10 is the electrical block diagram of the MEMS sensor system of another embodiment of the invention；
Figure 11 is the schematic diagram of the control signal of MEMS sensor system shown in Fig. 10.
Specific embodiment
The noise of operational amplifier is inputted with it and is inversely proportional to the size of pipe, i.e. input is bigger to the size of pipe, and operation is put
The noise of big device is lower.By taking 1/f noise as an example, the corresponding 1/f noise V of field effect transistornAre as follows:
Wherein, K is the first proportionality coefficient, and W is the width of the conducting channel of field effect transistor, and L is field effect transistor
Conducting channel length, f is frequency.When the first Proportional coefficient K and frequency f fixed, the size of field effect transistor is bigger,
That is the length L of the conducting channel of the width W and field effect transistor of the conducting channel of field effect transistor is bigger, field effect transistor
Manage corresponding 1/f noise VnIt is smaller.
It works in the electric current I of the field effect transistor of saturation statesAre as follows:
Wherein, kpFor the second proportionality coefficient, VGSFor the gate source voltage of field effect transistor, VthFor the threshold of field effect transistor
Threshold voltage.In actual design process, due to field effect transistor conducting channel length L variation range compared to field-effect
The variation of the width W of the conducting channel of transistor is smaller, and the size for increasing field effect transistor is usually to pass through increase field-effect
The width W of transistor is realized.As can be seen that length L, the second proportionality coefficient k of the conducting channel when field effect transistorp, field
The gate source voltage V of effect transistorGSAnd the threshold voltage V of field effect transistorGSWhen fixed, the conduction of field effect transistor
The width W of channel is bigger, the electric current I of field effect transistorsBigger, the power consumption of circuit is also bigger.
Therefore, in order to reduce the noise of MEMS sensor system shown in FIG. 1, in the first operational amplifier OPA1
Input in input stage amplifying circuit is arranged very big to the size needs of pipe.And input and be arranged bigger to the size of pipe, institute
The power consumption for stating MEMS sensor system can also increase accordingly, and existing MEMS sensor system can not meet low-power consumption and low simultaneously
The demand of noise, especially in the case where MEMS sensor heavy load, this contradiction is more prominent.Based on this, the present invention is provided
A kind of preamplifier, MEMS sensor reading circuit and MEMS sensor system, by the way that is arranged in preamplifier
One synchronous switching electric current provides circuit, by the first synchronism switching current supplying circuit the reading circuit different operating
Stage, the first biasing circuit in the first operational amplifier in Xiang Suoshu preamplifier provide the first of different current values partially
Electric current is set, to eliminate the contradiction that low noise and low-power consumption can not meet simultaneously.
To make the objectives, technical solutions, and advantages of the present invention clearer, below with reference to embodiment and attached drawing, to this
Invention is described in further detail, and exemplary embodiment of the invention and its explanation for explaining only the invention, are not made
For limitation of the invention.
Embodiment 1
The present embodiment provides a kind of preamplifiers, are applied to MEMS sensor reading circuit.Fig. 2 is the preposition amplification
The partial structure diagram of device, the preamplifier include that the first operational amplifier OPA1 and the first synchronism switching electric current provide
Circuit 21, the first operational amplifier OPA1 include the first biasing circuit and amplifying circuit at different levels.The amplifying circuit
Series is usually three-level, i.e. input stage amplifying circuit, output stage amplifier circuit and intergrade amplifying circuit.The amplifying circuit
Series be configured according to actual needs, the present embodiment to this without limit.Further, first operational amplifier
Some function electricity can also be arranged in addition to including first biasing circuit and amplifying circuit at different levels in OPA1 according to actual needs
Road, such as protection circuit etc..The preamplifier is a part of the reading circuit, a job of the reading circuit
Period can be divided into two working stages of clearing stage and reading stage: when working in the clearing stage, the reading circuit pair
Offset voltage and input terminal noise are stored；When working in the reading stage, the reading circuit from read output signal for subtracting
Fall the offset voltage and the input terminal noise, reads the signal proportional to extraneous transducing signal.
Specifically, the first synchronism switching current supplying circuit 21 is used to provide first partially to first biasing circuit
Electric current is set, first bias current is less than first biased electrical in the current value that the reading circuit works in the clearing stage
Stream works in the current value in reading stage in the reading circuit.First biasing circuit is by modes such as mirror images by described
One bias current is converted to the electric current for guaranteeing that amplifying circuits at different levels work normally；Amplifying circuits at different levels are used for first operation
The input signal of amplifier OPA1 amplifies.Since reading circuit work is at the stage of reading, the reading circuit is
It reads and needs to drive big load capacitance with the proportional signal of external world's transducing signal, the preamplifier, thus described the
One bias current is arranged bigger, guarantees that the electric current of amplifying circuits at different levels is bigger.And the reading circuit work is in the stage of clearing
When, the reading circuit is stored to offset voltage and input terminal noise, and the preamplifier does not need to drive big
Load capacitance, it is only necessary to maintain the working condition of amplifying circuits at different levels, thus can reduce the electric current of first bias current
Value, so that the electric current of amplifying circuit at different levels reduces, to reduce the power consumption of whole system.Therefore, the preamplifier is eliminated
The contradiction that low noise and low-power consumption can not meet simultaneously, while guaranteeing that the preamplifier has low noise, so that institute
The power consumption for stating preamplifier is greatly lowered.
If not using the first bias current that current value is of different sizes, electric current of first bias current in the stage of clearing
Value I1With first bias current read the stage current value I2Ratio be I1:I2=1:1.First bias current
The circuits such as the first operational amplifier OPA1 input stage and output stage are mirrored to by mirror current source, it is assumed that reset the stage
Clock duty cycle φ1With the clock duty cycle φ in the stage of reading2Ratio be φ1:φ2=3:1, mirroring ratios coefficient are k,
The then average current of the preamplifier in one cycle are as follows:
And preamplifier provided in this embodiment is used, if first bias current is in the current value in the stage of clearing
I1' and first bias current read the stage current value I'2Ratio be I1':I'2=0.2:1, wherein I'2=I2,
Constant, the then average current of the preamplifier in one cycle at this time is arranged in he are as follows:
As can be seen that the current value of the average current of preamplifier provided in this embodiment in one cycle, is reduced to
0.4 times of the current value of the average current of existing preamplifier in one cycle.By the way that first biasing is rationally arranged
Electric current is resetting the current value and clock duty cycle of the current value in stage, first bias current in the stage of reading, can be with
The power consumption of the preamplifier is reduced to original half or one third, it is even lower.
It should be noted that the first synchronism switching current supplying circuit 21 can be with first operational amplifier
OPA1 is integrated, and can also be arranged independently of each other with the first operational amplifier OPA1, the present embodiment to this without
It limits.Since the particular circuit configurations of the first operational amplifier OPA1 are not the improvement of the present embodiment, first fortune
Calculating amplifier OPA1 can be used existing circuit structure realization, thus the present embodiment is no longer to the first operational amplifier OPA1
Particular circuit configurations be described in detail.Fig. 3 is a kind of specific electricity of the first synchronism switching current supplying circuit 21
Line structure, the first synchronism switching current supplying circuit 21 include reference current source 31 and N number of current-controlled switch, the N
A current-controlled switch include current-controlled switch K31, current-controlled switch K32 ..., current-controlled switch K3N, wherein N
For the integer not less than 2.
Specifically, the reference current source 31 is for exporting N number of reference current.The reference current source 31 can be common
Current source, or band gap current reference.The electric current of the band gap current reference output is temperature independent, thus can
To improve the accuracy of first bias current.N number of reference current and N number of current-controlled switch correspond,
Each reference current correspondence is supplied to a current-controlled switch by the i.e. described reference current source 31.N number of reference current
Current value can all it is identical, can also part it is identical, can also be all not identical.For example, the current value of n-th of reference current
It can be n times of the current value of first reference current, 1≤n≤N and n are integer, and the present embodiment is to this without limiting.
One end of n-th of current-controlled switch is for receiving n-th of reference current, the control of n-th of current-controlled switch
End is connected and synchronizes as described first for receiving n-th of switch control signal, the other end of N number of current-controlled switch
Switching electric current provides the output end of circuit 21, and the output end of the first synchronism switching current supplying circuit 21 is described for generating
First bias current, 1≤n≤N and n are integer.For example, one end of first current-controlled switch K31 is for receiving first
Reference current, the control terminal of first current-controlled switch K31 is for receiving first switch control signal S31；Second electricity
One end of flow control switch K32 is for receiving second reference current, and the control terminal of second current-controlled switch K32 is for connecing
Receive first switch control signal S32；……；One end of n-th current-controlled switch K3N is used to receive n-th reference current,
The control terminal of n-th current-controlled switch K3N is for receiving n-th switch control signal S3N.N number of current-controlled switch
It can be the combination of one or more of the switch such as NMOS transistor, PMOS transistor or cmos switch, the present embodiment pair
This is without limiting.
Apply corresponding switch control signal by the control terminal to each current-controlled switch, can control each electric current
The switch state of control switch.The switch state of N number of current-controlled switch is different, first bias current of generation
Current value is not also identical.Therefore, the first synchronism switching current supplying circuit 21 can be provided to first biasing circuit
Different first bias current of current value, meets the working condition demand of the first operational amplifier OPA1.Further,
Due to being provided with N number of current-controlled switch in the first synchronism switching current supplying circuit 21, the value of N is not less than
2, thus more than two different current values may be implemented in the first synchronism switching current supplying circuit 21, first operation is put
For big device OPA1 in same working condition, first bias current can be some reference current, and it is several to be also possible to certain
The combination of reference current.It is possible thereby to flexibly realize that the first operational amplifier OPA1 exists according to specific power dissipation design demand
The electric current in different operating stage.
The switch control signal can be provided by the external circuit of the preamplifier, can also be described by being arranged in
Circuit inside preamplifier provides.When the switch control signal is mentioned by the circuit inside the preamplifier is arranged in
For when, the preamplifier further includes the first signal generating circuit, and first signal generating circuit is for generating described open
Close control signal.The switch control signal is determined by the specific structure of the current-controlled switch, for example, working as the electric current control
When system switch is NMOS transistor, PMOS transistor or cmos switch, the switch control signal is square-wave signal.Accordingly
Ground, first signal generating circuit are square-wave generator.Further, when the current-controlled switch is NMOS transistor,
The high level of the square-wave signal controls the current-controlled switch conducting, electric current described in the low level control of the square-wave signal
Control switch disconnects；When the current-controlled switch is PMOS transistor, the high level of the square-wave signal controls the electricity
Flow control switch disconnects, the conducting of current-controlled switch described in the low level control of the square-wave signal.
It should be noted that the first synchronism switching current supplying circuit 21 is not limited to structure shown in Fig. 3, as long as
The current generating circuit for being capable of providing two or more current values all can serve as the first synchronism switching electric current and mention
For circuit 21.
For different MEMS sensors, the physical circuit of the preamplifier is not also identical.It is passed with capacitive MEMS
For sensor, the preamplifier can be correlated double sampling circuit, or auto zero circuit.With the preceding storing
Big device is for auto zero circuit, Fig. 4 is a kind of particular circuit configurations of the preamplifier.Wherein, MEMS sensor
40 include two fixed electrodes and a target, wherein a fixed capacitor between electrode and the target can
To be indicated using equivalent capacity Ca, another capacitor fixed between electrode and the target can use equivalent capacity Cb
It indicates.It includes the first operational amplifier OPA1 and the first synchronism switching current supplying circuit that the preamplifier, which removes,
Outside 21, further includes first switch K41, second switch K42, third switch K43, the 4th switch K44, the 5th switch K45, the 6th opens
Close K46, the 7th switch K47 and feedback capacity C41.
Specifically, one end of the first switch K41 and one end of the third switch K43 are for receiving first with reference to electricity
One end of pressure Vref1, one end of the second switch K42 and the 4th switch K44 are for receiving the second reference voltage
Vref2, the other end of the first switch K41 connect the MEMS sensor 40 with the other end of the second switch K42
One fixed electrode, the other end of the third switch K43 connect the MEMS sensing with the other end of the 4th switch K44
Another of device 40 fixes electrode, and the voltage value of first reference voltage Vref 1 is not less than 0V, second reference voltage
The voltage value of Vref2 is not more than 0V.For example, when the reading circuit works in the reading stage, second reference voltage
The absolute value of the voltage value of Vref2 can be equal with the voltage value of first reference voltage Vref 1, first reference voltage
The voltage value of Vref1 is greater than 0V；When the reading circuit works in the clearing stage, the electricity of first reference voltage Vref 1
The voltage value of pressure value and second reference voltage Vref 2 can be 0V.The voltage value of first reference voltage Vref 1 and institute
The voltage value for stating the second reference voltage Vref 2 is 0V, the preamplifier when the reading circuit works in the clearing stage
Load capacitance driving requires the electric current minimum minimum, the required first synchronism switching current supplying circuit 21 provides, can be most
The preamplifier is reduced to limits in the power consumption in the stage of clearing.
The inverting input terminal of the first operational amplifier OPA1, one end of the 5th switch K45 and the feedback
One end of capacitor C41 connects the target of the MEMS sensor 40, the homophase input of the first operational amplifier OPA1
End ground connection, the other end and the described 6th that the output end of the first operational amplifier OPA1 connects the 5th switch K45 are opened
Close one end of K46 and the output end as the preamplifier.The other end connection the described 6th of the feedback capacity C41 is opened
Close the other end of K46 and one end of the 7th switch K47, the other end ground connection of the 7th switch K47.
The control terminal of the first switch K41, the control terminal of the 4th switch K44 and the 6th switch K46
Control terminal is for receiving first control signal S41, the control of the control terminal of the second switch K42, the third switch K43
The control terminal at end, the control terminal of the 5th switch K45 and the 7th switch K47 is for receiving second control signal S42.
The first control signal S41 and second control signal S42 is cyclical signal, and the first control signal S41
It is two-phase non-overlap signal with the second control signal S42.
It is similar with the current-controlled switch, the first switch K41, the second switch K42, third switch
K43, the 4th switch K44, the 5th switch K45, the 6th switch K46 and the 7th switch K47 can be
NMOS transistor, PMOS transistor or cmos switch etc. switch one or more of combination, the present embodiment to this not into
Row limits.By applying first control to the first switch K41, the 4th switch K44 and the 6th switch K46
Signal S41 processed, to the second switch K42, the third switch K43, the 5th switch K45 and the 7th switch
K47 applies the second control signal S42, can control the first switch K41, the second switch K42, the third and opens
K43, the 4th switch K44, the 5th switch K45, the 6th switch K46 and the 7th switch K47 is closed to open
Off status.
When the reading circuit works in the clearing stage, applies the first control signal S41 control described first and open
It closes K41, the 4th switch K44 and the 6th switch K46 to disconnect, apply described in the second control signal S42 control
Second switch K42, the third switch K43, the 5th switch K45 and the 7th switch K47 conducting, the reading electricity
Road stores the input terminal noise of offset voltage and the first operational amplifier OPA1；It is worked in the reading circuit
When the reading stage, applies the first control signal S41 and control the first switch K41, the 4th switch K44 and described
6th switch K46 conducting applies the second control signal S42 and controls the second switch K42, the third switch K43, institute
It states the 5th switch K45 and the 7th switch K47 to disconnect, the reading circuit from read output signal for cutting the imbalance
Voltage and the input terminal noise read the signal proportional to extraneous transducing signal.
Within a duty cycle of the reading circuit, the first switch K41, the 4th switch K44 and institute
State the 6th switch K46 turn-on time be less than the second switch K42, the third switch K43, the 5th switch K45 with
And the turn-off time of the 7th switch K47, and the first switch K41, the 4th switch K44 and the 6th switch
At the time of K46 is converted on state by off-state, the second switch K42, the third switch K43, described is lagged behind
At the time of 5th switch K45 and the 7th switch K47 are converted to off-state by state；The second switch K42,
The third switch K43, the 5th switch K45 and the 7th switch K47 are converted on state by off-state
Moment lags behind the first switch K41, the 4th switch K44 and the 6th switch K46 and is converted to by state
At the time of off-state.
The first control signal S41 and the second control signal S42 can be by the external electricals of the preamplifier
Road provides, and can also be provided by the circuit inside the preamplifier is arranged in.As the first control signal S41 and described
When second control signal S42 is provided by circuit inside the preamplifier is arranged in, the preamplifier further includes the
Binary signal generation circuit, the second signal generation circuit is for generating the first control signal S41 and second control
Signal S42.It should be noted that the second signal generation circuit and first signal generating circuit can be for two mutually
Independent circuit module, or the same circuit module, the present embodiment is to this without limiting.
Embodiment 2
In application scenes, the phase to the first operational amplifier OPA1 is needed to compensate.Therefore, this reality
It applies example and a kind of preamplifier is provided, compared with the preamplifier that embodiment 1 provides, difference is: the preamplifier
It further include phase compensation unit, the phase compensation unit is for compensating phase margin, it is ensured that first operational amplifier
The stability of OPA1.Fig. 5 is the electrical block diagram of the preamplifier, and the phase compensation unit includes the 8th switch
K48 and compensating electric capacity C42.One end of the 8th switch K48 connects the output end of the first operational amplifier OPA1, described
The other end of 8th switch K48 connects one end of the compensating electric capacity C42, and the control terminal of the 8th switch K48 is for receiving
The other end of the second control signal S42, the compensating electric capacity C42 are grounded.The reading stage is worked in the reading circuit
When, the second control signal S42 controls the 8th switch K48 conducting, and it is abundant to compensate phase by the compensating electric capacity C42
Degree.Certainly, the specific structure of the phase compensation unit is not limited to set in the output end of the first operational amplifier OPA1
Set the 8th switch K48 and compensating electric capacity C42, such as miller compensation can also be set etc., the present embodiment to this not into
Row limits.
Embodiment 3
The present embodiment provides a kind of preamplifier, Fig. 6 is the electrical block diagram of the preamplifier, with implementation
The preamplifier that example 1 provides is compared, and difference is: the preamplifier further includes the 9th switch K49.First operation
One end of the inverting input terminal of amplifier OPA1, one end of the 5th switch K45 and the feedback capacity C41 passes through described
9th switch K49 connects the target of the MEMS sensor 40, and the control terminal of the 9th switch K49 is described for receiving
First control signal S41.By the way that the 9th switch K49 is arranged, when the reading circuit works in the clearing stage, described the
One control signal S41 controls the 9th switch K49 and disconnects, to disconnect the preamplifier and the MEMS sensor 40
Connection, do not influenced by 40 signal intensity of MEMS sensor, it is ensured that when the reading circuit works in the clearing stage
The state of the first operational amplifier OPA1 remains unchanged, it is easy to accomplish the low-power consumption of the preamplifier.
Embodiment 4
The present embodiment provides a kind of preamplifier, Fig. 7 is the electrical block diagram of the preamplifier, with implementation
The preamplifier that example 2 provides is compared, and difference is:
The preamplifier further includes the 9th switch K49.The inverting input terminal of the first operational amplifier OPA1, institute
One end of one end and the feedback capacity C41 for stating the 5th switch K45 is passed by the 9th switch K49 connection MEMS
The target of sensor 40, the control terminal of the 9th switch K49 is for receiving the first control signal S41.Pass through setting
The 9th switch K49, when the reading circuit works in the clearing stage, first control signal S41 control described the
Nine switch K49 are disconnected, to disconnect the connection of the preamplifier Yu the MEMS sensor 40, are not sensed by the MEMS
The influence of 40 signal intensity of device, it is ensured that the first operational amplifier OPA1 described in when the reading circuit works in the clearing stage
State remains unchanged, it is easy to accomplish the low-power consumption of the preamplifier.
Embodiment 5
The present embodiment provides a kind of MEMS sensor system and MEMS sensor reading circuit, Fig. 8 is that the MEMS is passed
The electrical block diagram of sensor system, the MEMS sensor system include MEMS sensor 80 and the MEMS sensor
Reading circuit, the MEMS sensor reading circuit include preamplifier 81 and signal conditioning circuit 82.The MEMS sensing
Device 80 is used to being converted to the measurands such as pressure, acceleration and flow into faint electric signal and export, such as can be electricity
Appearance formula MEMS sensor etc.；The preamplifier 81 is the preposition amplification that embodiment 1 to embodiment 4 any embodiment provides
Device.The signal conditioning circuit 82 is for being filtered the output signal of the preamplifier 81 and/or analog-to-digital conversion etc.
Processing, can be analog circuit, is also possible to Analog-digital circuit.The circuit structure of the signal conditioning circuit 82 can be
Available circuit structure shown in FIG. 1, i.e., the described signal conditioning circuit 82 include by operational amplifier and the second bias current sources structure
At proportion differential device, integrator or proportional integral derivative device etc..
In the present embodiment, the signal conditioning circuit 82 includes M second operational amplifier OPA2 synchronous with M a second
Switching electric current provides circuit 22, and the second operational amplifier OPA2 and the second synchronism switching current supplying circuit 22 are one by one
Corresponding, M is positive integer.Specifically, the second operational amplifier OPA2 includes the second biasing circuit and amplifying circuit at different levels.
The second synchronism switching current supplying circuit 22 is used to provide the second bias current to corresponding second biasing circuit, and described the
Two bias currents are less than second bias current in the reading in the current value that the reading circuit works in the clearing stage
Circuit works in the current value in reading stage.The particular circuit configurations of the second synchronism switching current supplying circuit 22 with it is described
First synchronism switching current supplying circuit 21 is similar, can refer to the description to the first synchronism switching current supplying circuit 21,
Details are not described herein.
It should be noted that the M the second synchronism switching current supplying circuits 22 can be arranged independently of each other, for example,
The circuit structure of each second synchronism switching current supplying circuit 22 is as shown in figure 3, needed for each second operational amplifier OPA2
Bias current corresponding provided by a circuit；The M the second synchronism switching current supplying circuits 22 also can be set one
It rises, for example, the M the second synchronism switching current supplying circuits 22 share reference current source 31 shown in Fig. 3, the M the
Bias current needed for two operational amplifier OPA2 is provided by the same circuit；The M the second synchronism switching electric currents provide electricity
Road 22 can also be set together with the first synchronism switching current supplying circuit 21, for example, the M the second synchronism switchings
Current supplying circuit 22 and the first synchronism switching current supplying circuit 21 share reference current source 31 shown in Fig. 3, the M
Bias current needed for a second operational amplifier OPA2 and the first operational amplifier OPA1 is provided by the same circuit.Institute
Stating the second synchronism switching current supplying circuit 22 can integrate with corresponding second operational amplifier OPA2, can also be with
Corresponding second operational amplifier OPA2 is arranged independently of each other, and the present embodiment is to this without limiting.
It is similar with the preamplifier 81, in reading circuit work at the stage of reading, the signal condition electricity
Road 82 needs to drive big load capacitance, thus second bias current is arranged bigger, guarantees the electricity of amplifying circuits at different levels
It flows bigger.And the reading circuit worked at the stage of clearing, the signal conditioning circuit 82 does not need to drive big load electricity
Hold, it is only necessary to the working condition of amplifying circuits at different levels is maintained, thus can reduce the current value of second bias current, so that
The electric current of amplifying circuits at different levels reduces, to further decrease the power consumption of whole system.
One duty cycle of the reading circuit can be divided into two working stages of clearing stage and reading stage.Institute
First control signal S41 and the second control signal S42 are stated by the first switch K41, the second switch K42, described
Third switch K43, the 4th switch K44, the 5th switch K45, the 6th switch K46 and the 7th switch
The specific structure of K47 determines, for example, as the first switch K41, the second switch K42, the third switch K43, described
4th switch K44, the 5th switch K45, the 6th switch K46 and the 7th switch K47 are NMOS transistor
When, the first control signal S41 and the second control signal S42 are as shown in Figure 9.
Embodiment 6
The present embodiment provides a kind of MEMS sensor system and MEMS sensor reading circuit, Figure 10 is that the MEMS is passed
The electrical block diagram of sensor system.Compared with the reading circuit that embodiment 5 provides, difference is: the reading circuit is also
Including feed circuit 84, the feed circuit 84 is used for when the reading circuit works in feedback stage, by the signal tune
The output signal of reason circuit 83 feeds back to the input terminal of the preamplifier 82, i.e., the input terminal connection of the described feed circuit 84
The output end of the signal conditioning circuit 83, the output end of the feed circuit 84 connect the input of the preamplifier 82
End.Since the particular circuit configurations of the feed circuit 84 are not the improvement of the present embodiment, the feed circuit 84 be can be used
Existing circuit structure is realized, thus the present embodiment no longer carries out detailed retouch to the particular circuit configurations of the feed circuit 84
It states.
Still with the first switch K41, the second switch K42, the third switch K43, the 4th switch K44,
For the 5th switch K45, the 6th switch K46 and the 7th switch K47 are NMOS transistor, Figure 11 is this
The schematic diagram of the control signal of the MEMS sensor system of embodiment.One duty cycle of the reading circuit is divided into clearly
Zeroth order section reads three working stages of stage and feedback stage:
When the reading circuit works in the clearing stage, applies the first control signal S41 control described first and open
It closes K41, the 4th switch K44 and the 6th switch K46 to disconnect, apply described in the second control signal S42 control
Second switch K42, the third switch K43, the 5th switch K45 and the 7th switch K47 conducting, and the feedback
Circuit 84 does not work, and the reading circuit deposits the input terminal noise of offset voltage and the first operational amplifier OPA1
Storage；
When the reading circuit works in the reading stage, applies the first control signal S41 control described first and open
K41, the 4th switch K44 and the 6th switch K46 conducting are closed, is applied described in the second control signal S42 control
Second switch K42, the third switch K43, the 5th switch K45 and the 7th switch K47 are disconnected, and the feedback
Circuit 84 does not work, and the reading circuit is read for cutting the offset voltage and the input terminal noise from read output signal
The signal proportional to extraneous transducing signal out；
When the reading circuit works in feedback stage, applies the first control signal S41 control described first and open
It closes K41, the 4th switch K44 and the 6th switch K46 to disconnect, apply described in the second control signal S42 control
Second switch K42, the third switch K43, the 5th switch K45 and the 7th switch K47 conducting, and the feedback
Circuit 84 works, and the output signal of the reading circuit is fed back to front end.
Further, first bias current and second bias current work in feedback stage in the reading circuit
Current value, can be arranged according to actual needs.First bias current works in the electricity in clearing stage in the reading circuit
Flow valuve works in the current value of feedback stage, and first biasing no more than first bias current in the reading circuit
Electric current is not more than first bias current in the reading circuit in the current value that the reading circuit works in feedback stage
Work in the current value in reading stage；Second bias current works in the current value in clearing stage not in the reading circuit
The current value of feedback stage is worked in the reading circuit greater than second bias current, and second bias current exists
The current value that the reading circuit works in feedback stage is worked in no more than second bias current in the reading circuit
The current value in reading stage.
Above-described specific embodiment has carried out further the purpose of the present invention, technical scheme and beneficial effects
It is described in detail, it should be understood that being not intended to limit the present invention the foregoing is merely a specific embodiment of the invention
Protection scope, all within the spirits and principles of the present invention, any modification, equivalent substitution, improvement and etc. done should all include
Within protection scope of the present invention.
Claims (11)
1. a kind of preamplifier is applied to MEMS sensor reading circuit, including the first operational amplifier, first operation
Amplifier includes the first biasing circuit, which is characterized in that the preamplifier further includes that the first synchronism switching electric current provides electricity
Road；
The first synchronism switching current supplying circuit is used to provide the first bias current to first biasing circuit, and described the
One bias current is less than first bias current in the reading in the current value that the reading circuit works in the clearing stage
Circuit works in the current value in reading stage.
2. preamplifier according to claim 1, which is characterized in that the first synchronism switching current supplying circuit packet
Reference current source and N number of current-controlled switch are included, N is the integer not less than 2；
The reference current source is for exporting N number of reference current, N number of reference current and N number of current-controlled switch one
One is corresponding；
It is used for receiving n-th of reference current, the control terminal of n-th of current-controlled switch one end of n-th of current-controlled switch
In receiving n-th of switch control signal, the other end of N number of current-controlled switch is connected and as the synchronism switching electric current
The output end of circuit is provided, 1≤n≤N and n are integer.
3. preamplifier according to claim 2, which is characterized in that further include the first signal generating circuit；
First signal generating circuit is for generating the switch control signal.
4. preamplifier according to claim 1, which is characterized in that further include that first switch, second switch, third are opened
Pass, the 4th switch, the 5th switch, the 6th switch, the 7th switch and feedback capacity；
One end of the first switch and one end of third switch are used to receive the first reference voltage, the second switch
One end and one end of the 4th switch are opened for receiving the second reference voltage, the other end of the first switch and described second
One fixed electrode of the other end connection MEMS sensor of pass, the other end and the described 4th that the third switchs switch another
One end connects another fixation electrode of the MEMS sensor, and the voltage value of first reference voltage is not less than 0V, described
The voltage value of second reference voltage is not more than 0V；
One end of the inverting input terminal of first operational amplifier, one end of the 5th switch and the feedback capacity connects
The target of the MEMS sensor, the non-inverting input terminal ground connection of first operational amplifier are connect, first operation is put
The output end of big device connects the other end of the 5th switch and one end of the 6th switch and as the preamplifier
Output end；
One end that the other end of the feedback capacity connects the other end of the 6th switch and the described 7th switchs, the described 7th
The other end of switch is grounded；
The control terminal of the control terminal of the first switch, the control terminal of the 4th switch and the 6th switch is for receiving
First control signal, the control terminal of the second switch, the third switch control terminal, it is described 5th switch control terminal with
And the control terminal of the 7th switch is for receiving second control signal.
5. preamplifier according to claim 4, which is characterized in that further include phase compensation unit, the phase is mended
Repaying unit includes the 8th switch and compensating electric capacity；
One end of 8th switch connects the output end of first operational amplifier, the other end connection of the 8th switch
One end of the compensating electric capacity, the control terminal of the 8th switch is for receiving the second control signal, the compensating electric capacity
The other end ground connection.
6. preamplifier according to claim 4 or 5, which is characterized in that further include the 9th switch；
One end of the inverting input terminal of first operational amplifier, one end of the 5th switch and the feedback capacity is logical
Cross the target that the 9th switch connects the MEMS sensor, the control terminal of the 9th switch is for receiving described the
One control signal.
7. preamplifier according to claim 4, which is characterized in that further include second signal generation circuit；
The second signal generation circuit is for generating the first control signal and the second control signal.
8. a kind of MEMS sensor reading circuit, which is characterized in that any including signal conditioning circuit and claim 1 to 7
Preamplifier described in.
9. MEMS sensor reading circuit according to claim 8, which is characterized in that the signal conditioning circuit includes M
A second operational amplifier and M the second synchronism switching current supplying circuits, the second operational amplifier and described second is together
It walks switching electric current and circuit one-to-one correspondence is provided, M is positive integer；
The second operational amplifier includes the second biasing circuit；
The second synchronism switching current supplying circuit is used to provide the second bias current to corresponding second biasing circuit, described
Second bias current is less than second bias current in the reading in the current value that the reading circuit works in the clearing stage
Circuit works in the current value in reading stage out.
10. MEMS sensor reading circuit according to claim 9, which is characterized in that further include feed circuit；
First bias current works in the current value in clearing stage no more than first biased electrical in the reading circuit
Stream works in the current value of feedback stage in the reading circuit, and first bias current is worked in the reading circuit
The current value of feedback stage works in the current value in reading stage no more than first bias current in the reading circuit；
Second bias current works in the current value in clearing stage no more than second biased electrical in the reading circuit
Stream works in the current value of feedback stage in the reading circuit, and second bias current is worked in the reading circuit
The current value of feedback stage works in the current value in reading stage no more than second bias current in the reading circuit.
11. a kind of MEMS sensor system, including MEMS sensor, which is characterized in that further include any one of claim 8 to 10
The MEMS sensor reading circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910781595.1A CN110380700B (en) | 2019-08-23 | 2019-08-23 | Preamplifier, MEMS sensor readout circuit and MEMS sensor system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910781595.1A CN110380700B (en) | 2019-08-23 | 2019-08-23 | Preamplifier, MEMS sensor readout circuit and MEMS sensor system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110380700A true CN110380700A (en) | 2019-10-25 |
| CN110380700B CN110380700B (en) | 2020-05-26 |
Family
ID=68260416
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910781595.1A Active CN110380700B (en) | 2019-08-23 | 2019-08-23 | Preamplifier, MEMS sensor readout circuit and MEMS sensor system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110380700B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111561958A (en) * | 2020-05-15 | 2020-08-21 | 中国科学院地质与地球物理研究所 | MEMS sensor detection device and MEMS sensor system |
| CN113834867A (en) * | 2020-06-24 | 2021-12-24 | 杭州亿联康医疗器械有限公司 | Circuit of electrochemical sensor and using method and application thereof |
| CN114397696A (en) * | 2022-03-23 | 2022-04-26 | 中国科学院地质与地球物理研究所 | Earthquake acquisition system based on low-power-consumption MEMS sensor and sensor |
| US20220381583A1 (en) * | 2019-12-23 | 2022-12-01 | Robert Bosch Gmbh | Sensor and method for reducing an interference signal component in a measuring signal from a sensor |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203480005U (en) * | 2013-08-06 | 2014-03-12 | 中国科学院上海微系统与信息技术研究所 | An integrating circuit and an applicable superconducting quantum interference sensor |
| CN104345758A (en) * | 2013-07-26 | 2015-02-11 | 中国科学院上海微系统与信息技术研究所 | Biased amplifier circuit of superconducting quantum interference device |
| CN104345286A (en) * | 2013-08-06 | 2015-02-11 | 中国科学院上海微系统与信息技术研究所 | Integral circuit and superconductive quantum interference sensor using integral circuit |
| CN104881070A (en) * | 2014-02-27 | 2015-09-02 | 无锡华润上华半导体有限公司 | Ultra-low power consumption LDO circuit applied to MEMS |
| CN106886241A (en) * | 2017-03-29 | 2017-06-23 | 北京松果电子有限公司 | Low pressure difference linear voltage regulator and its Working mode switching method |
| CN109587419A (en) * | 2018-11-06 | 2019-04-05 | 上海集成电路研发中心有限公司 | A kind of imaging sensor low-power consumption reading circuit structure and working sequence control method |
-
2019
- 2019-08-23 CN CN201910781595.1A patent/CN110380700B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104345758A (en) * | 2013-07-26 | 2015-02-11 | 中国科学院上海微系统与信息技术研究所 | Biased amplifier circuit of superconducting quantum interference device |
| CN203480005U (en) * | 2013-08-06 | 2014-03-12 | 中国科学院上海微系统与信息技术研究所 | An integrating circuit and an applicable superconducting quantum interference sensor |
| CN104345286A (en) * | 2013-08-06 | 2015-02-11 | 中国科学院上海微系统与信息技术研究所 | Integral circuit and superconductive quantum interference sensor using integral circuit |
| CN104881070A (en) * | 2014-02-27 | 2015-09-02 | 无锡华润上华半导体有限公司 | Ultra-low power consumption LDO circuit applied to MEMS |
| CN106886241A (en) * | 2017-03-29 | 2017-06-23 | 北京松果电子有限公司 | Low pressure difference linear voltage regulator and its Working mode switching method |
| CN109587419A (en) * | 2018-11-06 | 2019-04-05 | 上海集成电路研发中心有限公司 | A kind of imaging sensor low-power consumption reading circuit structure and working sequence control method |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20220381583A1 (en) * | 2019-12-23 | 2022-12-01 | Robert Bosch Gmbh | Sensor and method for reducing an interference signal component in a measuring signal from a sensor |
| CN111561958A (en) * | 2020-05-15 | 2020-08-21 | 中国科学院地质与地球物理研究所 | MEMS sensor detection device and MEMS sensor system |
| CN111561958B (en) * | 2020-05-15 | 2021-03-30 | 中国科学院地质与地球物理研究所 | MEMS sensor detection device and MEMS sensor system |
| CN113834867A (en) * | 2020-06-24 | 2021-12-24 | 杭州亿联康医疗器械有限公司 | Circuit of electrochemical sensor and using method and application thereof |
| CN114397696A (en) * | 2022-03-23 | 2022-04-26 | 中国科学院地质与地球物理研究所 | Earthquake acquisition system based on low-power-consumption MEMS sensor and sensor |
| CN114397696B (en) * | 2022-03-23 | 2022-06-21 | 中国科学院地质与地球物理研究所 | Earthquake acquisition system based on low-power-consumption MEMS sensor and sensor |
| US11472696B1 (en) | 2022-03-23 | 2022-10-18 | Institute Of Geology And Geophysics, Chinese Academy Of Sciences | Seismic acquisition system and sensor based on MEMS sensor with low power consumption |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110380700B (en) | 2020-05-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110380700A (en) | Preamplifier, MEMS sensor reading circuit and MEMS sensor system | |
| US7528636B2 (en) | Low differential output voltage circuit | |
| US20140210435A1 (en) | Regulator | |
| CN111638744B (en) | Current frequency conversion circuit | |
| US20090179706A1 (en) | Capacitor Gain-Boost Circuit | |
| JPH08195631A (en) | Sense amplifier | |
| US7893767B2 (en) | Operational amplifier and integrating circuit | |
| EP1955437B1 (en) | Small signal amplifier with large signal output boost stage | |
| CN100479027C (en) | Display device | |
| EP0643478A1 (en) | Cascode circuit operable at a low working voltage and having a high output impedance | |
| CN112769419B (en) | Hysteresis comparator | |
| CA1162301A (en) | Time division multiplier transducer with selective phase shift | |
| US5623224A (en) | Communication circuit with voltage drop circuit and low voltage drive circuit | |
| US4284958A (en) | Folded-cascode amplifier arrangement with current mirror amplifier | |
| US6483384B1 (en) | High speed amplifier | |
| US8212617B2 (en) | Fast class AB output stage | |
| JPH09130162A (en) | Current driver circuit with side current adjustment | |
| US7808281B1 (en) | Differential common mode logic driver with switching control circuit | |
| CN108733129A (en) | A kind of LDO based on modified load current replicated architecture | |
| US11150760B2 (en) | Touch analog front-end circuit and touch display apparatus thereof | |
| CN112346506A (en) | LDO circuit without off-chip capacitor | |
| US7525370B2 (en) | Circuits for generating a reference voltage | |
| US6559786B2 (en) | Circuit arrangement for conversion of an input current signal to a corresponding digital output signal | |
| US10756674B2 (en) | Amplifier | |
| JP2806530B2 (en) | Reference voltage source |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |