CN110376250A - A kind of integrated circuit that metallic nanoparticle is ligand modified and preparation method - Google Patents
A kind of integrated circuit that metallic nanoparticle is ligand modified and preparation method Download PDFInfo
- Publication number
- CN110376250A CN110376250A CN201910590616.1A CN201910590616A CN110376250A CN 110376250 A CN110376250 A CN 110376250A CN 201910590616 A CN201910590616 A CN 201910590616A CN 110376250 A CN110376250 A CN 110376250A
- Authority
- CN
- China
- Prior art keywords
- ligand
- cooh
- covered
- integrated circuit
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003446 ligand Substances 0.000 title claims abstract description 87
- 239000002105 nanoparticle Substances 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title claims abstract description 31
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 claims abstract description 15
- 229920005573 silicon-containing polymer Polymers 0.000 claims abstract description 15
- 235000013339 cereals Nutrition 0.000 claims description 45
- 241000209094 Oryza Species 0.000 claims description 43
- 235000007164 Oryza sativa Nutrition 0.000 claims description 43
- 239000010931 gold Substances 0.000 claims description 43
- 229910052737 gold Inorganic materials 0.000 claims description 43
- 235000009566 rice Nutrition 0.000 claims description 43
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 42
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 27
- 239000012462 polypropylene substrate Substances 0.000 claims description 26
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 238000004544 sputter deposition Methods 0.000 claims description 24
- 239000000243 solution Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 23
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 21
- 125000000896 monocarboxylic acid group Chemical group 0.000 claims description 20
- 150000002500 ions Chemical class 0.000 claims description 19
- 239000002082 metal nanoparticle Substances 0.000 claims description 18
- 150000001768 cations Chemical class 0.000 claims description 15
- 230000008859 change Effects 0.000 claims description 13
- 238000010521 absorption reaction Methods 0.000 claims description 12
- 235000019441 ethanol Nutrition 0.000 claims description 12
- 238000005498 polishing Methods 0.000 claims description 12
- 239000002356 single layer Substances 0.000 claims description 12
- 238000003756 stirring Methods 0.000 claims description 12
- 229910021645 metal ion Inorganic materials 0.000 claims description 11
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 9
- 239000010410 layer Substances 0.000 claims description 9
- 239000012071 phase Substances 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 239000005457 ice water Substances 0.000 claims description 3
- 239000012074 organic phase Substances 0.000 claims description 3
- 239000012266 salt solution Substances 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims description 3
- 230000006641 stabilisation Effects 0.000 claims description 3
- 238000011105 stabilization Methods 0.000 claims description 3
- QBVXKDJEZKEASM-UHFFFAOYSA-M tetraoctylammonium bromide Chemical compound [Br-].CCCCCCCC[N+](CCCCCCCC)(CCCCCCCC)CCCCCCCC QBVXKDJEZKEASM-UHFFFAOYSA-M 0.000 claims description 3
- 238000012544 monitoring process Methods 0.000 claims 1
- 239000002243 precursor Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 9
- 230000005611 electricity Effects 0.000 abstract description 6
- 230000007613 environmental effect Effects 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 239000000126 substance Substances 0.000 abstract description 5
- 238000005538 encapsulation Methods 0.000 abstract description 4
- 238000011109 contamination Methods 0.000 abstract description 3
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 238000005265 energy consumption Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 4
- 125000000129 anionic group Chemical group 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- -1 resistance Substances 0.000 description 4
- 239000002253 acid Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000005595 deprotonation Effects 0.000 description 2
- 238000010537 deprotonation reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000009881 electrostatic interaction Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 239000013110 organic ligand Substances 0.000 description 2
- 238000005303 weighing Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- JZZIHCLFHIXETF-UHFFFAOYSA-N dimethylsilicon Chemical compound C[Si]C JZZIHCLFHIXETF-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Electrochemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analytical Chemistry (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
The invention discloses a kind of integrated circuit that metallic nanoparticle is ligand modified and preparation methods, belong to electronics field.A kind of integrated circuit that metallic nanoparticle is ligand modified and preparation method, thisization electricity circuit can use in wet environment, solves the not waterproof disadvantage of traditional silicon circuit, and the dimethyl silicone polymer sheathing material flexibility of encapsulation is good, is not easily broken.Circuit energy consumption is low, in microwatt range, and chemical signal is changed into short the time required to electric signal, i.e. high sensitivity.Compared to traditional integrated circuit, the production of nanoparticle is that nonhazardous is free of contamination, has the feature of environmental protection.
Description
Technical field
The present invention relates to electronics field more particularly to a kind of integrated circuit that metallic nanoparticle is ligand modified and preparations
Method.
Background technique
Integrated circuit is a kind of microelectronic device or component.It is through peroxidating, photoetching, diffusion, extension, evaporation of aluminum etc. half
Conductor manufacturing process, between the elements such as semiconductor, resistance, capacitor needed for constituting the circuit with certain function and they
Connecting wire is fully integrated on a fritter silicon wafer, is then welded the electronic device being encapsulated in a shell, is become with institute
Need the microstructure of circuit function；Wherein all elements have formed a whole in structure, make electronic component towards microminiature
Major step has been strided forward in terms of change, low-power consumption, intelligence and high reliability.The appearance and application of integrated circuit, indicate electronics skill
Art has developed to a new stage.It realizes material, element, the unification between circuit three.It is widely used in space electricity
Sub- technology, biomedical electronic technology, information processing, remote sensing technology and sensor.
The production of integrated circuit: it is used as base using monocrystalline silicon wafer crystal (or iii-v, such as GaAs).Then using micro-
The components such as MOSFET or BJT are made in the technologies such as shadow, diffusion, CMP, conducting wire then are made using lithographic, film and CMP technique, such as
This just completes chip manufacturing.
But silicon coremaking piece can not use in wet environment, since moisture content is higher under moist environment, be easy
Form droplet on circuit boards, be attached on each pin or track of electronic component, due to being applied in current circuit board
Electronic component be all SOP or SSOP surface mount elements, the distance between pin and pin are very small, especially SSOP encapsulation
The distance between its pin of integrated circuit and pin are very small, encapsulate integrated circuit in SSOP for droplet drop when Moisture converting
It, will be to one invisible resistance of increase between the pin of integrated circuit if circuit board is in operating status at this time when on pin
(because water is conductive), can notably cause short circuit, the circuit board in running order is caused to break down.If by moisture
The droplet drop transformed on circuit boards between the pin of electronic component when, and circuit board is not just at working or power off at this time
After state will not immediately cause damages to circuit board, but the pin of electronic component or track are by the infiltration of water droplet, element
Pin will corrode, and can also break foot detonator circuit plate failure because of corrosion over time, after track is infiltrated by droplet, especially
It is that signal transmssion line is relatively fine, after infiltration a period of time, just will appear the mould disconnected situation of track and occurs, lead to circuit
Plate is in secondary devote oneself to work, the case where appearance cannot be run.And when integrated circuit board cannot work, since circuit is complicated,
Pin is more, not easy to repair, can only replace circuit board, and maintenance cost is higher, and makes the material of the electronic components such as resistance, capacitor
It all include metal, for the rare or precious metal part in circuit board, by the way of burning or strong acid dissolution, i.e., it
Noble metal is left after his ingredient removal.This process can generate a large amount of " three wastes ", be unfavorable for environmental protection.
But integrated circuit and preparation method that a kind of current metallic nanoparticle is ligand modified, waterproof effect is poor, cost
It is high and not environmentally.
Summary of the invention
The purpose of the present invention is to solve waterproof effects it is poor, at high cost and not environmentally the problem of, and propose a kind of gold
Belong to nanoparticle ligand modified integrated circuit and preparation method.
To achieve the goals above, present invention employs following technical solutions:
A kind of integrated circuit that metallic nanoparticle is ligand modified, comprising: dimethyl silicone polymer shell；
Resistance, the resistance are placed in dimethyl silicone polymer interior of shell, and the resistance and diode are electrically connected, institute
Resistance is stated for maintaining the stabilization of integrated circuit；
Diode, the diode are stacked face-to-face by diode cathode and diode cathode and are formed, the diode peace
It is placed in dimethyl silicone polymer interior of shell, the diode and sensor are electrically connected, and the diode is integrated for controlling
Circuit；
Sensor, the sensor are made of metal cation sensor, alkaline gas sensor and humidity sensor, institute
It states sensor and is placed in dimethyl silicone polymer outer surface of outer cover, the sensor is used to monitor humidity, the acid of environmental air
The change of basicity and metal ion.
It is ligand modified to be applied to a kind of metallic nanoparticle for a kind of integrated circuit preparation that metallic nanoparticle is ligand modified
Integrated circuit, the preparation of the resistance and alkaline gas sensor the following steps are included:
A1, the HS- (CH that the gold electrode after polishing treatment is immersed in 4-5m m o l/L2)10It is impregnated in-COOH solution
10-14h spontaneously forms fine and close monolayer in gold electrode surfaces；
A2, fall the remaining HS- (CH of surface physics absorption using a large amount of ethyl alcohol and pure water rinsing2)10- COOH molecule；
A3, it will be covered with HS- (CH2)10- COOH gold electrode immerses in the metal nanoparticle prepared, can be obtained and covers
It is stamped ligand HS- (CH2)10Jenner's grain of rice substrate of-COOH；
A4, ligand HS- (CH is covered with by obtained in A32)10Jenner's grain of rice substrate sputter coating of-COOH is to polypropylene
Substrate obtains resistance and alkaline gas sensor.
Preferably, the diode cathode and humidity sensor preparation the following steps are included:
B1, the HS- (CH that the gold electrode after polishing treatment is immersed in 4-5m m o l/L2)11-N(CH3)3It is soaked in H solution
10-14h is steeped, spontaneously forms fine and close monolayer in gold electrode surfaces；
B2, fall the remaining HS- (CH of surface physics absorption using a large amount of ethyl alcohol and pure water rinsing2)11-N(CH3)3H molecule；
B3, it will be covered with HS- (CH2)11-N(CH3)3The gold electrode of H ligand is put into NH4After being electrolysed in Cl solution
It immerses in the metal nanoparticle prepared, can be obtained by Cl-What ion surrounded is covered with ligandJenner's grain of rice substrate；
B4, will be obtained by Cl in B3-What ion surrounded is covered with ligand's
Jenner's grain of rice substrate sputter coating obtains diode cathode and humidity sensor to polypropylene substrate.
Preferably, the diode anode preparation the following steps are included:
C1, the HS- (CH that the gold electrode after polishing treatment is immersed in 4-5mmol/L2)1010- is impregnated in-COOH solution
14h spontaneously forms fine and close monolayer in gold electrode surfaces；
C2, fall the remaining HS- (CH of surface physics absorption using a large amount of ethyl alcohol and pure water rinsing2)10- COOH molecule；
C3, it will be covered with HS- (CH2)10The gold electrode of-COOH ligand is put into NH4It is immersed after being electrolysed in Cl solution
In the metal nanoparticle prepared, can be obtained byOrWhat ion surrounded is covered with ligand HS-
(CH2)10-COO-Jenner's grain of rice substrate；
C4, by quilt obtained in C3OrWhat ion surrounded is covered with ligand HS- (CH2)10-COO-
Jenner's grain of rice substrate sputter coating to polypropylene substrate obtain diode anode.
Preferably, the metal cation sensor preparation the following steps are included:
D1, the HS- (CH that the gold electrode after polishing treatment is immersed in 4-5mmol/L2)10- COOH and HS-CH2CH
(NHCOCH3) 10-14h is impregnated in COOH solution, fine and close monolayer is spontaneously formed in gold electrode surfaces；
D2, fall the remaining HS- (CH of surface physics absorption using a large amount of ethyl alcohol and pure water rinsing2)10- COOH and HS-
CH2CH(NHCOCH3) COOH molecule；
D3, it will be covered with ligand HS- (CH2)10- COOH and ligand HS-CH2CH(NHCOCH3) COOH gold electrode immersion system
In the metal nanoparticle got ready, it can be obtained and be covered with ligand HS- (CH2)10- COOH and HS-CH2CH(NHCOCH3)COOH
Jenner's grain of rice substrate；
D4, ligand HS- (CH is covered with by obtained in D32)10- COOH and HS-CH2CH(NHCOCH3) COOH Jenner
The sputter coating of grain of rice substrate obtains metal cation sensor to polypropylene substrate.
Preferably, further include following metal nanoparticle preparation step:
S1, the toluene solution of 10-20mlTOAB is taken to be placed in 50ml round-bottomed flask, addition 2- 8ml concentration is 0.6-1mg/
Ml metal salt presoma stirs 25-35min；
After S2, stirring, TOAB is transferred to metal ion in toluene organic phase from water phase as consisting of phase-transferring agent, at this time upper layer
It is rendered as the color of metal salt solution, it is 0.8-1.2mol/LNaBH that the concentration that the fresh ice water of 5-8ml is prepared, which is added,4, stirring
1.5-2.5h；
After S3, stirring, the nanoparticle sol for being dispersed in upper toluene layer, Reusability are obtained after separatory funnel filters
A large amount of pure water rinsings filter away the NaBH in remaining benzene layer4Metal nanoparticle is made afterwards, it is standby in the environment of being stored in 3-5 DEG C
With.
Compared with prior art, the present invention provides a kind of integrated circuits that metallic nanoparticle is ligand modified and preparation side
Method, have it is following the utility model has the advantages that
(1) the purpose of the present invention is to provide a kind of waterproof change electricity circuits.Circuit consists of three parts, first is that by covering
It is stamped HS- (CH2)10The resistance constituted in Jenner's grain of rice sputter coating to polypropylene substrate of-COOH ligand, second is that by being covered with
HS-CH2CH(NHCOCH3) COOH and HS- (CH2)10It is constituted in Jenner's grain of rice sputter coating to polypropylene substrate of-COOH ligand
Metal cation sensor, be covered with(the former is moved Jenner's grain of rice of ligand
Cl-Particle surrounds) humidity sensor that constitutes in sputter coating to polypropylene substrate and it is covered with HS- (CH2)10- COOH matches
The alkaline gas sensor constituted in Jenner's grain of rice sputter coating to polypropylene substrate of body.Three are covered with HS- (CH2)10-
COO-(the former is moved Jenner's grain of rice of ligandOrParticle surrounds), sputter coating to polypropylene-base
The anode that diode is constituted on plate, is covered with(the former is moved Jenner's grain of rice of ligand
Dynamic Cl-Particle surrounds) cathode of diode is constituted in sputter coating to polypropylene substrate.The positive and negative anodes of diode are face-to-face
Lamination is placed to obtain complete diode.All electronic components connect post package in poly dimethyl silicon by logic circuit setting
In oxygen alkane shell.Obtained thisization electricity circuit can use in wet environment, and solving traditional silicon circuit cannot prevent
The shortcomings that water, and the dimethyl silicone polymer sheathing material flexibility of encapsulation is good, is not easily broken.The circuit energy consumption it is low (
Microwatt range), and chemical signal is changed into short the time required to electric signal, i.e. high sensitivity.Compared to traditional integrated circuit,
The production of nanoparticle is that nonhazardous is free of contamination, has the feature of environmental protection；
(2) resistance is changed by the thickness and electrode width of gap size, film between change nanoparticle in the present invention
Become its resistance value.
(3) working principle of humidity sensor is the water content in nanometer film when the humidity increases in the present inventionAlso it will increase, since sparing action makes the nanoparticle for being covered with organic ligand and resists
Electrostatic interaction between weighing apparatus ion dies down, therefore the electric conductivity enhancing of material, so as to cause the variation of electric current.Alkaline gas sensing
The working principle of device is covered with HS- (CH2)10COOH group on the nanoparticle of-COOH ligand is exposed in alkaline gas, carboxylic
Sour deprotonation generates mobile ammonium ion.The increase of ammonium ion increases ionic current, effectively reduces impedance, leads to
Cross the variation that chemical change causes electric signal.The working principle of metal ion sensor is the HS- covered on Jenner's grain of rice
CH2CH(NHCOCH3) COOH and HS- (CH2)10- COOH ligand, the former and metal ion have strong binding ability, the latter and metal
The binding ability of ion is weaker, but enhances the selectivity to metal ion.The combination of the two ligands can detect determining
Metal cation will increase the electric conductivity of material when metal cation combines, cause the change of electric signal.
(4) diode is by being covered with HS- (CH in the present invention2)10-COO-(the former is moved Jenner's grain of rice of ligandOrIon surrounds) as anode, it is covered withThe gold of ligand
Nanoparticle is as the cathode (Cl that the former is moved-Ion surrounds), the positive and negative anodes of diode must be physically contacted could normal work
Make, working principle is after positive and negative anodes lamination is placed, and counter ion counterionsl gegenions are (positiveOrIon, the Cl of cathode-
Ion) phase counterdiffusion occurs, for anionic current to cathode, anionic current forms electric field to anode between positive and negative anodes, to be formed
Current path.
Detailed description of the invention
Fig. 1 is a kind of integrated circuit structure signal of integrated circuit that metallic nanoparticle is ligand modified proposed by the present invention
Figure；
Fig. 2 is that a kind of integrated circuit that metallic nanoparticle is ligand modified proposed by the present invention is covered with HS- (CH2)10-
The polypropylene substrate schematic diagram of Jenner's grain of rice of COOH ligand；
Fig. 3 is that a kind of integrated circuit that metallic nanoparticle is ligand modified proposed by the present invention is covered with HS- (CH2)10-
COOH and HS- (CH2)10-COO-The polypropylene substrate schematic diagram of Jenner's grain of rice of ligand；
Fig. 4 is a kind of being covered with for integrated circuit that metallic nanoparticle is ligand modified proposed by the present inventionThe polypropylene substrate schematic diagram of Jenner's grain of rice of ligand；
Fig. 5 is a kind of anode portion for the integrated circuit that metallic nanoparticle is ligand modified proposed by the present invention by being covered with
HS-(CH2)10-COO-Jenner's grain of rice polypropylene-base plate of ligand 3, cathode portion is by being covered withThe polypropylene substrate schematic diagram of Jenner's grain of rice of ligand.
Figure label explanation:
1 dimethyl silicone polymer shell, 2 resistance, 3 diodes, 4 sensors.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.
In the description of the present invention, it is to be understood that, term " on ", "lower", "front", "rear", "left", "right", "top",
The orientation or positional relationship of the instructions such as "bottom", "inner", "outside" is to be based on the orientation or positional relationship shown in the drawings, merely to just
In description the present invention and simplify description, rather than the device or element of indication or suggestion meaning must have a particular orientation, with
Specific orientation construction and operation, therefore be not considered as limiting the invention.
Embodiment 1:
A kind of integrated circuit that metallic nanoparticle is ligand modified, comprising: dimethyl silicone polymer shell 1；
Resistance 2, resistance 2 are placed in inside dimethyl silicone polymer shell 1, and resistance 2 and diode 3 are electrically connected, resistance 2
For maintaining the stabilization of integrated circuit；
Diode 3, diode 3 are stacked face-to-face by diode cathode and diode cathode and are formed, and diode 3 is placed in poly-
Inside dimethyl siloxane shell 1, diode 3 and sensor 4 are electrically connected, and diode 3 is for controlling integrated circuit；
Sensor 4, sensor 4 are made of metal cation sensor, alkaline gas sensor and humidity sensor, sensing
Device 4 is placed in 1 outer surface of dimethyl silicone polymer shell, and sensor 4 is used to monitor the humidity, pH value and gold of environmental air
Belong to the change of ion.
The purpose of the present invention is to provide a kind of waterproof change electricity circuits.Circuit consists of three parts, first is that by covering
There is HS- (CH2)10The resistance 1 constituted in Jenner's grain of rice sputter coating to polypropylene substrate of-COOH ligand, second is that by being covered with
HS-CH2CH(NHCOCH3) COOH and HS- (CH2)10It is constituted in Jenner's grain of rice sputter coating to polypropylene substrate of-COOH ligand
Metal cation sensor, be covered with(the former is moved Jenner's grain of rice of ligand
Cl-Particle surrounds) humidity sensor that constitutes in sputter coating to polypropylene substrate and it is covered with HS- (CH2)10- COOH matches
The alkaline gas sensor constituted in Jenner's grain of rice sputter coating to polypropylene substrate of body.Three are covered with HS- (CH2)10-
COO-(the former is moved Jenner's grain of rice of ligandOrParticle surrounds), sputter coating to polypropylene-base
The anode that diode 3 is constituted on plate, is covered withJenner's grain of rice (the former quilt of ligand
Mobile Cl-Particle surrounds) cathode of diode 3 is constituted in sputter coating to polypropylene substrate.By the positive and negative pole-face of diode 3
Opposite lamination is placed to obtain complete diode 3.All electronic components connect post package in poly- two by logic circuit setting
In methylsiloxane shell 1.Obtained thisization electricity circuit can use in wet environment, solve traditional silicon circuit
Not waterproof disadvantage, and 1 material flexibility of dimethyl silicone polymer shell of encapsulation is good, is not easily broken.Circuit consumption
Can low (in microwatt range), and chemical signal is changed into short the time required to electric signal, i.e. high sensitivity.Collect compared to tradition
At circuit, the production of nanoparticle is that nonhazardous is free of contamination, has the feature of environmental protection.
Embodiment 2: based on embodiment 1 it is different be；
It is ligand modified to be applied to a kind of metallic nanoparticle for a kind of integrated circuit preparation that metallic nanoparticle is ligand modified
Integrated circuit, the preparation of resistance 2 and alkaline gas sensor the following steps are included:
A1, the HS- (CH that the gold electrode after polishing treatment is immersed in 4-5mmol/L2)1010- is impregnated in-COOH solution
14h spontaneously forms fine and close monolayer in gold electrode surfaces；
A2, fall the remaining HS- (CH of surface physics absorption using a large amount of ethyl alcohol and pure water rinsing2)10- COOH molecule；
A3, it will be covered with HS- (CH2)10- COOH gold electrode immerses in the metal nanoparticle prepared, can be obtained and covers
It is stamped ligand HS- (CH2)10Jenner's grain of rice substrate of-COOH；
A4, ligand HS- (CH is covered with by obtained in A32)10Jenner's grain of rice substrate sputter coating of-COOH is to polypropylene
Substrate obtains resistance 2 and alkaline gas sensor.
Further, it is preferable that further include following metal nanoparticle preparation step:
S1, the toluene solution of 10-20mlTOAB is taken to be placed in 50ml round-bottomed flask, addition 2- 8ml concentration is 0.6-1mg/
Ml metal salt presoma stirs 25-35min；
After S2, stirring, TOAB is transferred to metal ion in toluene organic phase from water phase as consisting of phase-transferring agent, at this time upper layer
It is rendered as the color of metal salt solution, it is 0.8-1.2mol/LNaBH that the concentration that the fresh ice water of 5-8ml is prepared, which is added,4, stirring
1.5-2.5h；
After S3, stirring, the nanoparticle sol for being dispersed in upper toluene layer, Reusability are obtained after separatory funnel filters
A large amount of pure water rinsings filter away the NaBH in remaining benzene layer4Metal nanoparticle is made afterwards, it is standby in the environment of being stored in 3-5 DEG C
With.
Resistance 2 is changed by the thickness and electrode width of gap size, film between change nanoparticle in the present invention
Its resistance value.
Embodiment 3: based on Examples 1 and 2 it is different be；
The preparation of diode cathode and humidity sensor the following steps are included:
B1, the HS- (CH that the gold electrode after polishing treatment is immersed in 4-5mmol/L2)11-N(CH3)3It is impregnated in H solution
10-14h spontaneously forms fine and close monolayer in gold electrode surfaces；
B2, fall the remaining HS- (CH of surface physics absorption using a large amount of ethyl alcohol and pure water rinsing2)11-N(CH3)3H molecule；
B3, it will be covered with HS- (CH2)11-N(CH3)3The gold electrode of H ligand is put into NH4After being electrolysed in Cl solution
It immerses in the metal nanoparticle prepared, can be obtained by Cl-What ion surrounded is covered with ligandJenner's grain of rice substrate；
B4, will be obtained by Cl in B3-What ion surrounded is covered with ligand's
Jenner's grain of rice substrate sputter coating obtains diode cathode and humidity sensor to polypropylene substrate.
The preparation of diode anode the following steps are included:
C1, the HS- (CH that the gold electrode after polishing treatment is immersed in 4-5mmol/L2)1010- is impregnated in-COOH solution
14h spontaneously forms fine and close monolayer in gold electrode surfaces；
C2, fall the remaining HS- (CH of surface physics absorption using a large amount of ethyl alcohol and pure water rinsing2)10- COOH molecule；
C3, it will be covered with HS- (CH2)10The gold electrode of-COOH ligand is put into NH4It is immersed after being electrolysed in Cl solution
In the metal nanoparticle prepared, can be obtained byOrWhat ion surrounded is covered with ligand HS-
(CH2)10-COO-Jenner's grain of rice substrate；
C4, by quilt obtained in C3OrWhat ion surrounded is covered with ligand HS- (CH2)10-COO-
Jenner's grain of rice substrate sputter coating to polypropylene substrate obtain diode anode.
Diode 3 is by being covered with HS- (CH in the present invention2)10-COO-(the former is moved Jenner's grain of rice of ligandOrIon surrounds) as anode, it is covered withThe gold of ligand
Nanoparticle is as the cathode (Cl that the former is moved-Ion surrounds), the positive and negative anodes of diode 3 must be physically contacted could normal work
Make, working principle is after positive and negative anodes lamination is placed, and counter ion counterionsl gegenions are (positiveOrIon, the Cl of cathode-
Ion) phase counterdiffusion occurs, for anionic current to cathode, anionic current forms electric field to anode between positive and negative anodes, to be formed
Current path.
Embodiment 4: based on embodiment 1,2 and 3 it is different be；
The preparation of metal cation sensor the following steps are included:
D1, the HS- (CH that the gold electrode after polishing treatment is immersed in 4-5mmol/L2)10- COOH and HS-CH2CH
(NHCOCH3) 10-14h is impregnated in COOH solution, fine and close monolayer is spontaneously formed in gold electrode surfaces；
D2, fall the remaining HS- (CH of surface physics absorption using a large amount of ethyl alcohol and pure water rinsing2)10- COOH and HS-
CH2CH(NHCOCH3) COOH molecule；
D3, it will be covered with ligand HS- (CH2)10- COOH and ligand HS-CH2CH(NHCOCH3) COOH gold electrode immersion system
In the metal nanoparticle got ready, it can be obtained and be covered with ligand HS- (CH2)10- COOH and HS-CH2CH(NHCOCH3)COOH
Jenner's grain of rice substrate；
D4, ligand HS- (CH is covered with by obtained in D32)10- COOH and HS-CH2CH(NHCOCH3) COOH Jenner
The sputter coating of grain of rice substrate obtains metal cation sensor to polypropylene substrate.
The working principle of humidity sensor is the water content in nanometer film when the humidity increases in the present inventionAlso it will increase, since sparing action makes the nanoparticle for being covered with organic ligand and resists
Electrostatic interaction between weighing apparatus ion dies down, therefore the electric conductivity enhancing of material, so as to cause the variation of electric current.Alkaline gas sensing
The working principle of device is covered with HS- (CH2)10COOH group on the nanoparticle of-COOH ligand is exposed in alkaline gas,
Carboxylic acid deprotonation generates mobile ammonium ion.The increase of ammonium ion increases ionic current, effectively reduces impedance,
Cause the variation of electric signal by chemical change.The working principle of metal ion sensor is the HS- covered on Jenner's grain of rice
CH2CH(NHCOCH3) COOH and HS- (CH2)10- COOH ligand, the former and metal ion have strong binding ability, the latter and metal
The binding ability of ion is weaker, but enhances the selectivity to metal ion.The combination of the two ligands can detect determining
Metal cation will increase the electric conductivity of material when metal cation combines, cause the change of electric signal.
The foregoing is only a preferred embodiment of the present invention, but scope of protection of the present invention is not limited thereto,
Anyone skilled in the art in the technical scope disclosed by the present invention, according to the technique and scheme of the present invention and its
Inventive concept is subject to equivalent substitution or change, should be covered by the protection scope of the present invention.
Claims (6)
1. a kind of integrated circuit that metallic nanoparticle is ligand modified, comprising: dimethyl silicone polymer shell (1), it is characterised in that；
Resistance (2), the resistance (2) are placed in inside dimethyl silicone polymer shell (1), the resistance (2) and diode (3)
It is electrically connected, the resistance (2) is used to maintain the stabilization of integrated circuit；
Diode (3), the diode (3) is stacked face-to-face by diode cathode and diode cathode to be formed, the diode
(3) it is internal to be placed in dimethyl silicone polymer shell (1), the diode (3) and sensor (4) are electrically connected, two pole
Pipe (3) is for controlling integrated circuit；
Sensor (4), the sensor (4) are made of metal cation sensor, alkaline gas sensor and humidity sensor,
The sensor (4) is placed in dimethyl silicone polymer shell (1) outer surface, and the sensor (4) is hollow for monitoring environment
The change of the humidity, pH value and metal ion of gas.
2. a kind of integrated circuit preparation that metallic nanoparticle is ligand modified, it is characterised in that: be applied to a kind of metal nano
The ligand modified integrated circuit of grain, the preparation of the resistance (2) and alkaline gas sensor the following steps are included:
A1, the HS- (CH that the gold electrode after polishing treatment is immersed in 4-5mmol/L2)1010-14h is impregnated in-COOH solution,
Gold electrode surfaces spontaneously form fine and close monolayer；
A2, fall the remaining HS- (CH of surface physics absorption using a large amount of ethyl alcohol and pure water rinsing2)10- COOH molecule；
A3, it will be covered with HS- (CH2)10- COOH gold electrode immerses in the metal nanoparticle prepared, can be obtained and is covered with
Ligand HS- (CH2)10Jenner's grain of rice substrate of-COOH；
A4, ligand HS- (CH is covered with by obtained in A32)10Jenner's grain of rice substrate sputter coating of-COOH is to polypropylene substrate
Obtain resistance (2) and alkaline gas sensor.
3. a kind of ligand modified integrated circuit preparation of metallic nanoparticle according to claim 2, it is characterised in that:
The preparation of the diode cathode and humidity sensor the following steps are included:
B1, the HS- (CH that the gold electrode after polishing treatment is immersed in 4-5mmol/L2)11-N(CH3)310- is impregnated in H solution
14h spontaneously forms fine and close monolayer in gold electrode surfaces；
B2, fall the remaining HS- (CH of surface physics absorption using a large amount of ethyl alcohol and pure water rinsing2)11-N(CH3)3H molecule；
B3, it will be covered with HS- (CH2)11-N(CH3)3The gold electrode of H ligand is put into NH4System is immersed after being electrolysed in Cl solution
In the metal nanoparticle got ready, it can be obtained by Cl-What ion surrounded is covered with ligandJenner's grain of rice substrate；
B4, will be obtained by Cl in B3-What ion surrounded is covered with ligandJenner
The sputter coating of grain of rice substrate obtains diode cathode and humidity sensor to polypropylene substrate.
4. a kind of ligand modified integrated circuit preparation of metallic nanoparticle according to claim 2, it is characterised in that:
The preparation of the diode anode the following steps are included:
C1, the HS- (CH that the gold electrode after polishing treatment is immersed in 4-5mmol/L2)1010-14h is impregnated in-COOH solution,
Gold electrode surfaces spontaneously form fine and close monolayer；
C2, fall the remaining HS- (CH of surface physics absorption using a large amount of ethyl alcohol and pure water rinsing2)10- COOH molecule；
C3, it will be covered with HS- (CH2)10The gold electrode of-COOH ligand is put into NH4It immerses and prepares after being electrolysed in Cl solution
Metal nanoparticle in, can be obtained byOrWhat ion surrounded is covered with ligand HS- (CH2)10-
COO-Jenner's grain of rice substrate；
C4, by quilt obtained in C3OrWhat ion surrounded is covered with ligand HS- (CH2)10-COO-Gold
The sputter coating of nanoparticle substrate obtains diode anode to polypropylene substrate.
5. a kind of ligand modified integrated circuit preparation of metallic nanoparticle according to claim 2, it is characterised in that:
The preparation of the metal cation sensor the following steps are included:
D1, the HS- (CH that the gold electrode after polishing treatment is immersed in 4-5mmol/L2)10- COOH and HS-CH2CH(NHCOCH3)
10-14h is impregnated in COOH solution, spontaneously forms fine and close monolayer in gold electrode surfaces；
D2, fall the remaining HS- (CH of surface physics absorption using a large amount of ethyl alcohol and pure water rinsing2)10- COOH and HS-CH2CH
(NHCOCH3) COOH molecule；
D3, it will be covered with ligand HS- (CH2)10- COOH and ligand HS-CH2CH(NHCOCH3) COOH gold electrode immerses and prepare
In metal nanoparticle, it can be obtained and be covered with ligand HS- (CH2)10- COOH and HS-CH2CH(NHCOCH3) COOH gold nano
Grain substrate；
D4, ligand HS- (CH is covered with by obtained in D32)10- COOH and HS-CH2CH(NHCOCH3) COOH Jenner's grain of rice base
Plate sputter coating obtains metal cation sensor to polypropylene substrate.
6. special according to a kind of ligand modified integrated circuit preparation of any metallic nanoparticle of claim 2-5
Sign is: further include following metal nanoparticle preparation step:
S1, the toluene solution of 10-20mlTOAB is taken to be placed in 50ml round-bottomed flask, it is 0.6-1mg/ml gold that 2-8ml concentration, which is added,
Belong to salt precursor body, stirs 25-35min；
After S2, stirring, TOAB is transferred to metal ion in toluene organic phase from water phase as consisting of phase-transferring agent, and upper layer is presented at this time
For the color of metal salt solution, it is 0.8-1.2mol/LNaBH that the concentration that the fresh ice water of 5-8ml is prepared, which is added,4, stir 1.5-
2.5h；
After S3, stirring, the nanoparticle sol for being dispersed in upper toluene layer is obtained after separatory funnel filters, Reusability is a large amount of
Pure water rinsing filters away the NaBH in remaining benzene layer4Metal nanoparticle is made afterwards, it is spare in the environment of being stored in 3-5 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910590616.1A CN110376250B (en) | 2019-07-02 | 2019-07-02 | Integrated circuit modified by metal nanoparticle ligand and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910590616.1A CN110376250B (en) | 2019-07-02 | 2019-07-02 | Integrated circuit modified by metal nanoparticle ligand and preparation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110376250A true CN110376250A (en) | 2019-10-25 |
| CN110376250B CN110376250B (en) | 2022-03-18 |
Family
ID=68251509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910590616.1A Expired - Fee Related CN110376250B (en) | 2019-07-02 | 2019-07-02 | Integrated circuit modified by metal nanoparticle ligand and preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110376250B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007019276A2 (en) * | 2005-08-04 | 2007-02-15 | University Of Virginia Patent Foundation | Quantitative detection of lead in water |
| CN102169850A (en) * | 2006-04-28 | 2011-08-31 | 株式会社半导体能源研究所 | Semiconductor integrated circuit, manufacturing method thereof, and semiconductor device using semiconductor integrated circuit |
| CN102500287A (en) * | 2011-09-28 | 2012-06-20 | 重庆大学 | Graphene/modified titanium dioxide nano sol composite material and preparation method thereof |
| CN108226251A (en) * | 2018-01-17 | 2018-06-29 | 中国检验检疫科学研究院 | A kind of preparation method of disposable bisphenol-A aptamers biosensor |
-
2019
- 2019-07-02 CN CN201910590616.1A patent/CN110376250B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007019276A2 (en) * | 2005-08-04 | 2007-02-15 | University Of Virginia Patent Foundation | Quantitative detection of lead in water |
| CN102169850A (en) * | 2006-04-28 | 2011-08-31 | 株式会社半导体能源研究所 | Semiconductor integrated circuit, manufacturing method thereof, and semiconductor device using semiconductor integrated circuit |
| CN102500287A (en) * | 2011-09-28 | 2012-06-20 | 重庆大学 | Graphene/modified titanium dioxide nano sol composite material and preparation method thereof |
| CN108226251A (en) * | 2018-01-17 | 2018-06-29 | 中国检验检疫科学研究院 | A kind of preparation method of disposable bisphenol-A aptamers biosensor |
Non-Patent Citations (2)
| Title |
|---|
| JOHN FINK 等: "Self-Organization of Nanosized Gold Particles", 《CHEM. MATER》 * |
| 陈瑞青 等: "采用配体交换法制备贵金属纳米粒子修饰电极的研究", 《贵金属》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110376250B (en) | 2022-03-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0185941B1 (en) | Polymer-based microelectronic pH-sensor | |
| Jia et al. | 1D alignment of ZnO@ ZIF-8/67 nanorod arrays for visible-light-driven photoelectrochemical water splitting | |
| AU581701B2 (en) | Apparatus for use in electrical, e.g. electrochemical, measurement procedures, and its production and use, and composite assemblies incorporating the apparatus | |
| Zohdy et al. | Corrosion and passivation behaviors of tin in aqueous solutions of different pH | |
| Ferris et al. | 3D interdigitated microsupercapacitors with record areal cell capacitance | |
| Zhang et al. | pH and iodide ion effect on corrosion inhibition of histidine self-assembled monolayer on copper | |
| Reynard et al. | Vanadium–manganese redox flow battery: study of mniii disproportionation in the presence of other metallic ions | |
| JP2005172769A (en) | Electrochemical measuring electrode | |
| KR20070024473A (en) | Layered barrier structure having one or more definable layers and method | |
| CN103403224B (en) | Manufacture the method for displacement plating precursor | |
| CN103265022B (en) | Method for spontaneously depositing three-dimensional graphene on conductive substrate | |
| TWI629700B (en) | Capacitor package structure | |
| CN105529191A (en) | High-conversion-efficiency solar cell based vehicle license plate recognition device of parking lot | |
| KR100215181B1 (en) | Corrosion and dissolution protection of a conductive silver/polymer composite | |
| CN1953868A (en) | Chromium-free antitarnish adhesion promoting treatment composition | |
| CN102687251A (en) | Etchant and method for manufacturing semiconductor device using same | |
| CN110376250A (en) | A kind of integrated circuit that metallic nanoparticle is ligand modified and preparation method | |
| Siva et al. | Emerging action of corrosion prevention based on sustained self-healing coatings | |
| CN108076591B (en) | The preparation method and preparation facilities of a kind of flexible circuit or electrode | |
| CN104828773A (en) | Nanowire in polypyrrole/silver@ silver sulfide core shell structure, use thereof and preparation method therefor | |
| Chamousis et al. | Effect of fractal silver electrodes on charge collection and light distribution in semiconducting organic polymer films | |
| CN110318067A (en) | Electro catalytic electrode, preparation and the recovery method of recoverable | |
| Ko et al. | Electroless gold plating on aluminum patterned chips for CMOS-based sensor applications | |
| KR100898020B1 (en) | Substrate a built-in rechargeable secondary battery and Semiconductor having the same | |
| CN105628757A (en) | ORP sensing chip based on MEMS and manufacturing method of ORP sensing chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20220318 |