CN110346855A - The preparation method of light diffusing sheet - Google Patents
The preparation method of light diffusing sheet Download PDFInfo
- Publication number
- CN110346855A CN110346855A CN201910703385.0A CN201910703385A CN110346855A CN 110346855 A CN110346855 A CN 110346855A CN 201910703385 A CN201910703385 A CN 201910703385A CN 110346855 A CN110346855 A CN 110346855A
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- Prior art keywords
- peripheral region
- photoresist layer
- preparation
- exposed
- central area
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/02—Diffusing elements; Afocal elements
- G02B5/0268—Diffusing elements; Afocal elements characterized by the fabrication or manufacturing method
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
Abstract
The present invention provides a kind of preparation methods of light diffusing sheet.This preparation method is the following steps are included: form photoresist layer in substrate surface, defining photoresist layer has central area and peripheral region, peripheral region includes n the first peripheral region and n+1 the second peripheral region, first peripheral region and the second peripheral region around central area and are arranged alternately, the natural number that n is >=1；Photoresist layer sequence is exposed and is developed, central area property is formed microstructured layers, and the first peripheral region and the second peripheral region are formed and have reeded anti-overflow plastic structure, adhesive-spill-preventing structure ring is around microstructured layers, wherein, exposure intensity to the first peripheral region is less than to the exposure intensity of central area, and the exposure intensity to the first peripheral region is less than to the exposure intensity of the second peripheral region.It is effectively prevented the excessive glue situation that may occur when light diffusing sheet to be fixed in camera lens using above-mentioned anti-overflow plastic structure, avoids influence of the excessive glue to device optical performance.
Description
Technical field
The present invention relates to optical technical fields, in particular to a kind of preparation method of light diffusing sheet.
Background technique
Light diffusing sheet must be used, in the fields such as TOF Range finder to provide the area source of uniform.Such light
Diffusion sheet needs the structure feature with micro-nano-scale for adequately being scattered to visible-infrared light or diffraction.It is existing
There are dry etching, wet etching, photoetching, electron beam lithography, nano impression etc. to can be used for making tool in some micro-nano technology technologies
There is the light diffusing sheet of micro-nano-scale structure feature.Light diffusing sheet for TOF is in the precision designed and manufactured far below knot
Structure light etc. has the Range finder scheme being strict with to the spatial distribution of emergent light.Therefore, having for the light diffusing sheet of TOF can
It can be produced in batches with lower cost and higher efficiency.
In high volume production process, necessarily refer to for TOF light diffusing sheet to be assembled in lens barrel using as TOF lens assembly
A component and be fixed.The technical problem faced during such volume production is to fill the parts such as eyeglass
It needs to be fixed using dotting glue method when fitting on lens barrel, and glue may excessively cause to overflow, and influence lens optical to have
Imitate the optical property within part.
Summary of the invention
The main purpose of the present invention is to provide a kind of preparation methods of light diffusing sheet, are spread with solving light in the prior art
Piece in assembly excessive glue and the problem of lead to device optical reduced performance.
To achieve the goals above, according to an aspect of the invention, there is provided a kind of preparation method of light diffusing sheet, packet
It includes following steps: forming photoresist layer in substrate surface, defining photoresist layer has central area and peripheral region, peripheral region
Including n the first peripheral region and n+1 the second peripheral region, the first peripheral region and the second peripheral region are around center
It domain and is arranged alternately, the natural number that n is >=1；Photoresist layer sequence is exposed and is developed, central area property is formed micro-
Structure sheaf, and the first peripheral region and the second peripheral region are formed and have reeded anti-overflow plastic structure, adhesive-spill-preventing structure ring around
Microstructured layers, wherein the exposure intensity to the first peripheral region is less than to the exposure intensity of central area, and to the second external zones
The exposure intensity in domain is less than the exposure intensity to the first peripheral region.
Further, in substrate surface spin coating positive photoresist, to obtain photoresist layer.
Further, photoresist layer with a thickness of 5~80 μm.
Further, photoresist layer is exposed and is developed, central area, which is formed, has periodic micro structure battle array
The microstructured layers of column or random distribution micro structure array.
Further, central area is rectangle, and the length of central area is 1.6~4mm, and width is 0.8~2mm.
Further, photoresist layer is exposed and is developed, so that corresponding with the first peripheral region in substrate surface
Partial denudation, exposed part constitute the bottom surface of groove.
Further, in the step of being exposed to photoresist layer, substrate level is placed, and is made outside light and first
Enclosing has inclination angle between the surface in region, so that the first peripheral region forms tip-like structure after development；Or to photoetching
In the step of glue-line is exposed, substrate inclination is prevented, and keep light vertical with the surface of the first peripheral region, so that first
Peripheral region forms tip-like structure after development.
It further, is 0 to the exposure intensity of the first peripheral region.
Further, the first peripheral region is spaced multiple, is exposed and develops to photoresist layer, by the
One peripheral region and the second peripheral region form multiple grooves, and each groove structure interval is arranged and surround microstructured layers.
Further, in the step of being exposed to photoresist layer, to the exposure intensity of each first peripheral region not phase
Together.
It applies the technical scheme of the present invention, provides a kind of preparation method of light diffusing sheet, which passes through light
Photoresist layer is divided into multiple regions, and adjusts the exposure intensity to each region, to form microstructured layers and around microstructured layers
Anti-overflow plastic structure, so that being effectively prevented using above-mentioned anti-overflow plastic structure may send out when light diffusing sheet to be fixed in camera lens
Raw excessive glue situation avoids the light diffusing sheet influence of excessive glue to device optical performance in assembly, and then improves with upper
State the optical property of the device of light diffusing sheet.
Detailed description of the invention
The Figure of description for constituting a part of the invention is used to provide further understanding of the present invention, and of the invention shows
Examples and descriptions thereof are used to explain the present invention for meaning property, does not constitute improper limitations of the present invention.In the accompanying drawings:
Fig. 1 is shown in the preparation method according to a kind of light diffusing sheet of the application, forms photoresist layer in substrate surface
The schematic diagram of the section structure of matrix afterwards；
Fig. 2 shows the schematic diagram of the section structure that rear matrix is exposed to photoresist layer shown in Fig. 1；
Fig. 3 is shown develop to photoresist exposed portion shown in Fig. 2 after matrix the schematic diagram of the section structure；
Fig. 4 shows the overlooking structure diagram of matrix shown in Fig. 3；
Fig. 5 is shown in a kind of embodiment according to the application, matrix after photoresist layer sequence is exposed and is developed
The schematic diagram of the section structure；
Fig. 6 is shown in another embodiment according to the application, base after photoresist layer sequence is exposed and is developed
The schematic diagram of the section structure of body；And
Fig. 7 is shown in the another embodiment according to the application, base after photoresist layer sequence is exposed and is developed
The schematic diagram of the section structure of body.
Wherein, the above drawings include the following reference numerals:
10, microstructured layers；11, anti-overflow plastic structure；12, groove；100, substrate；111, the first excessive glue groove；112, second overflows
Glue groove；113, third excessive glue groove；21, photoresist layer；22, photoresist exposed portion.
Specific embodiment
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the present invention can phase
Mutually combination.The present invention will be described in detail below with reference to the accompanying drawings and embodiments.
In order to enable those skilled in the art to better understand the solution of the present invention, below in conjunction in the embodiment of the present invention
Attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is only
The embodiment of a part of the invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill people
The model that the present invention protects all should belong in member's every other embodiment obtained without making creative work
It encloses.
It should be noted that description and claims of this specification and term " first " in above-mentioned attached drawing, "
Two " etc. be to be used to distinguish similar objects, without being used to describe a particular order or precedence order.It should be understood that using in this way
Data be interchangeable under appropriate circumstances, so as to the embodiment of the present invention described herein.In addition, term " includes " and " tool
Have " and their any deformation, it is intended that cover it is non-exclusive include, for example, containing a series of steps or units
Process, method, system, product or equipment those of are not necessarily limited to be clearly listed step or unit, but may include without clear
Other step or units listing to Chu or intrinsic for these process, methods, product or equipment.
As background technique is introduced, the component assemblies such as TOF light diffusing sheet are needed when on lens barrel in the prior art
It is fixed using dotting glue method, and glue may excessively cause to overflow, and influence the optics within lens optical live part
Property.In order to solve technical problem as above, in the first embodiment of the application, present applicant proposes a kind of systems of light diffusing sheet
Preparation Method, as shown in Figures 1 to 4, comprising the following steps:
Photoresist layer 21 is formed on 100 surface of substrate, defining photoresist layer 21 has central area and peripheral region, periphery
Region includes n the first peripheral region and n+1 the second peripheral region, and the first peripheral region and the second peripheral region are in
It heart district domain and is arranged alternately, the natural number that n is >=1；
21 sequence of photoresist layer is exposed and is developed, central area property is formed into microstructured layers 10, and by first
Peripheral region and the second peripheral region form the anti-overflow plastic structure 11 with groove 12, and anti-overflow plastic structure 11 is around microstructured layers
10, wherein the exposure intensity to the first peripheral region, and the exposure to the second peripheral region are less than to the exposure intensity of central area
Luminous intensity is less than the exposure intensity to the first peripheral region.
In the above-described embodiments, it since microstructured layers 10 have the rough surface for protruding from surface, is carried out to central area
Exposure intensity can not be excessive when exposure, need to leave the photoresist of a part at least to form the rough surface.Around central area
Be non-optical active area, the optical property of light diffusing sheet will not be had an impact, thus anti-overflow plastic structure 11 be arranged in it is non-
In optical active area.The wall of anti-overflow plastic structure 11 by being constituted after the first peripheral region exposure and imaging, anti-overflow plastic structure 11
Bottom section after the second peripheral region exposure and imaging by constituting.
In the above preparation method, it by the way that photoresist layer is divided into multiple regions, and adjusts strong to the exposure in each region
Degree, to form microstructured layers and around the anti-overflow plastic structure of microstructured layers, to effectively be prevented using above-mentioned anti-overflow plastic structure
The excessive glue situation that may only occur when light diffusing sheet to be fixed in camera lens, avoid light diffusing sheet assembly when excessive glue to device
The influence of part optical property, and then improve the optical property of the device with above-mentioned light diffusing sheet.
Above-mentioned optical property includes but is not limited to the efficiency of transmission, shooting angle, energy of the optical active area of light diffusing sheet
Measure distributing homogeneity etc..
In the second embodiment of the application, substrate 100 is silicon layer, silicon carbide layer, quartz layer, resin layer, conductive glass layer
Any one of with ceramic layer.Those skilled in the art the type to above-mentioned substrate 100 can carry out rationally according to actual needs
It chooses.But it should be noted that the type of above-mentioned substrate 100 can also be not limited to mentioned kind, those skilled in the art can
To carry out Rational choice according to type of the prior art to above-mentioned substrate 100.
In the 3rd embodiment of the application, substrate 100 with a thickness of 0.4~0.6mm.Meet the substrate of above-mentioned thickness range
100 can convenient for carried out in TOF light diffusing sheet using.
In the fourth embodiment of the application, in 100 surface spin coating positive photoresist of substrate, to obtain photoresist layer 21.It can
Mask plate is set to 21 top of photoresist layer, mask plate has and central area, the first peripheral region and the second external zones
The corresponding hollow-out parts in domain, it is suitable to above-mentioned central area, above-mentioned first peripheral region and above-mentioned second peripheral region by mask plate
Sequence is exposed and develops, and the exposure intensity of corresponding different zones is different, so that area corresponding with hollow-out parts in photoresist layer
Domain is partially removed or all removals.
In the above-described embodiments, formed photoresist layer 21 photoresist may include PMMA (polymethyl methacrylate),
Common materials, the photoresist such as poly- polydimethyl glutarimide (PMGI) and DNQ (phenolic resin) are preferably felt in 300-600nm
Light.Those skilled in the art can carry out Rational choice according to type of the prior art to above-mentioned photoresist.
In the 5th embodiment of the application, photoresist layer 21 with a thickness of 5~80 μm.Meet the photoetching of above-mentioned thickness range
More structurally sound anti-overflow plastic structure can be prepared convenient for thickness to the exposure and development treatment of photoresist layer 21 in glue-line 21
11, more effectively avoid the occurrence of excessive glue.Those skilled in the art can set photoresist according to required thickness
Spin coating revolving speed.
In the sixth embodiment of the application, before the step of forming above-mentioned photoresist layer 21, above-mentioned preparation of the invention
Method further includes the steps that carrying out high-temperature baking to substrate 100.Above-mentioned high-temperature process can be improved photoresist layer 21 subsequent
Exposure and imaging efficiency preferably toasts 1~60min to substrate at 50~150 DEG C.
In the 7th embodiment of the application, develop to the photoresist layer 21 after exposure, developer solution includes TMAH.Surface
The substrate 100 for being formed with photoresist layer 21 can be impregnated in developer solution or be sprayed using developer solution, the time can 1~
10min.Hereafter, other common solvents such as water can be used to be fixed, the pattern after development can also be transferred to other again
Substrate is moved on substrate.
In the 8th embodiment of the application, photoresist layer 21 is exposed and is developed, central area, which is formed, to be had
The microstructured layers 10 of periodic micro structure array or random distribution micro structure array.Above-mentioned microstructured layers 10 correspond to substrate 100
The region on surface, the optical active area in light diffusing sheet as formed can using above-mentioned microstructured layers 10 as mask layer
The micro-structure for realizing light scattering is formed on 100 surface of substrate.
In the above-described embodiments, micro structure array includes the protrusion of various shapes with micro-or nano size, as hemispherical,
Rectangular, disc, triangle, polygon or irregular shape.The array of micro-structure can be two-dimensional array, be also possible to two
The stacking of array is tieed up to form cubical array.Substrate 100 with micro structure array may be used as depth finding device (TOF) group
Infrared light from laser is diffused as the area source of uniform by the light diffusing sheet in part.
In the 9th embodiment of the application, central area is rectangle, and the length of central area is 1.6~4mm, and width is
0.8~2mm.The central area for meeting above-mentioned size range can make to be subsequently formed to be convenient in the micro-structure on 100 surface of substrate
Carried out in TOF light diffusing sheet using.
In the tenth embodiment of the application, photoresist layer 21 is exposed and is developed, so that in 100 surface of substrate
The corresponding partial denudation of one peripheral region, exposed part constitute the bottom surface of groove 12, such as Fig. 2 institute of photoresist exposed portion 22
Show, the base structure after development is as shown in Figure 3 and Figure 4.It is strong by adjusting the exposure to the first peripheral region in photoresist layer 21
Degree can make the first peripheral region no longer have photoresist after applying developer solution, improve outside the first peripheral region and second
The difference in height after region exposes again is enclosed, extra glue is effectively prevent to be leached to the optical active area that anti-overflow plastic structure 11 is protected
In.
In the 11st embodiment of the application, in the step of being exposed to photoresist layer 21, to the first peripheral region
Exposure intensity it is constant.By keeping exposure intensity constant, the first peripheral region can be made to be formed after applying developer solution vertically
Side wall obtains first excessive glue groove 111 with biggish volume, as shown in Figure 5.
In the 12nd embodiment of the application, in the step of being exposed to photoresist layer 21,100 level of substrate is put
It sets, and makes that there is inclination angle between light and the surface of the first peripheral region, so that the first peripheral region forms needle after development
Pointed structures.Above embodiment by the incident direction of the oblique light in photoetching, thus reach to form triangle needed for spy
Determine angle, forms the tip-like structure with sloped sidewall after development, obtain the second excessive glue groove 112, as shown in figure 4, to
It enhances to the restriction effect for overflowing glue.
In the 13rd embodiment of the application, in the step of being exposed to photoresist layer 21, substrate 100 is tilted anti-
Only, and keep light vertical with the surface of the first peripheral region, so that the first peripheral region forms tip-like structure after development, such as
Shown in Fig. 6.Above embodiment passes through the direction for not changing incident light, and will expose again after substrate 100 entirely inclination, equally
The tip-like structure with sloped sidewall is formed, to enhance to the restriction effect for overflowing glue.
In the 14th embodiment of the application, in the step of being exposed to photoresist layer 21, to the first peripheral region
Exposure intensity be 0.By not being exposed processing to the first peripheral region, the anti-overflow plastic structure 11 to be formed can be made to retain light
The original height of photoresist layer 21 has enable more glues anti-to improve the volume of anti-overflow 11 further groove 12 of plastic structure
It is stored in excessive glue structure 11, avoids influence of the excessive glue to device optical performance.
It should be noted that the structure of anti-overflow plastic structure 11 is not limited to only include two side walls, it also may include multiple
Side wall constitutes multiple grooves 12 between adjacent wall.In the 15th embodiment of the application, the first peripheral region is interval setting
It is multiple, photoresist layer 21 is exposed and is developed, the first peripheral region and the second peripheral region are formed into multiple grooves
12, each 12 spacing structure of groove is arranged and surround microstructured layers 10.Above embodiment is capable of forming with multiple grooves 12
Anti-overflow plastic structure 11 has enable more glues to store in anti-overflow plastic structure 11, avoids excessive glue to device optical performance
It influences.
In the above embodiment, it is preferable that in the step of being exposed to photoresist layer 21, to each first peripheral region
Exposure intensity it is not identical.It is different by the exposure intensity to different first peripheral region, anti-overflow plastic structure 11 can be made to have
While having multiple groove 12, the Sidewall Height for each groove 12 being distributed from inside to outside is gradually reduced, and obtains third excessive glue groove
113, as shown in fig. 7, in this way near the Sidewall Height highest of microstructured layers 10, and successively reduce outward, help to guide glue
Liquid is to flowing except optical active area.
In the 16th embodiment of the application, 21 sequence of photoresist layer is exposed and is developed, central area is formed
Microstructured layers 10, above-mentioned preparation method of the invention are further comprising the steps of: with microstructured layers 10 be mask layer to substrate 100 into
Row etching, to form micro-structure on 100 surface of substrate.Substrate 100 with micro-structure is used as light diffusion sheet, has and dissipates to light
Penetrate function.
In the 17th embodiment of the application, 21 sequence of photoresist layer is exposed and is developed, central area is formed
Microstructured layers 10, above-mentioned preparation method of the invention are further comprising the steps of: with microstructured layers 10 be mask layer to substrate 100 into
Row electroforming is to make metal mother.By carrying out electroforming to substrate 100, it to be used for subsequent molding.
It can be seen from the above description that the above embodiments of the present invention realized the following chievements:
Above-mentioned preparation method adjusts the exposure intensity to each region by the way that photoresist layer is divided into multiple regions, with
The anti-overflow plastic structure of microstructured layers and circular microstructured layers is formed, is being incited somebody to action to be effectively prevented using above-mentioned anti-overflow plastic structure
The excessive glue situation that light diffusing sheet may occur when being fixed in camera lens, avoid light diffusing sheet assembly when excessive glue to device optical
The influence of performance, and then improve the optical property of the device with above-mentioned light diffusing sheet.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of preparation method of light diffusing sheet, which comprises the following steps:
Photoresist layer (21) are formed on substrate (100) surface, define the photoresist layer (21) with central area and external zones
Domain, the peripheral region include n the first peripheral region and n+1 the second peripheral region, first peripheral region and described
Second peripheral region around the central area and is arranged alternately, the natural number that n is >=1；
The photoresist layer (21) is sequentially exposed and is developed, the central area property is formed into microstructured layers (10),
And first peripheral region and second peripheral region are formed into the anti-overflow plastic structure (11) with groove (12), it is described anti-
Excessive glue structure (11) is around the microstructured layers (10), wherein is less than the exposure intensity of the central area to described first
The exposure intensity of peripheral region, and the exposure to first peripheral region is less than to the exposure intensity of second peripheral region
Intensity.
2. preparation method according to claim 1, which is characterized in that in the substrate (100) surface spin coating positive-tone photo
Glue, to obtain the photoresist layer (21).
3. preparation method according to claim 1 or 2, which is characterized in that the photoresist layer (21) with a thickness of 5~80
μm。
4. preparation method according to claim 1, which is characterized in that the photoresist layer (21) is exposed and is shown
The central area is formed the microstructured layers with periodic micro structure array or random distribution micro structure array by shadow
(10)。
5. preparation method according to claim 1 or 4, which is characterized in that the central area is rectangle, the center
The length in domain is 1.6~4mm, and width is 0.8~2mm.
6. preparation method according to claim 1, which is characterized in that the photoresist layer (21) is exposed and is shown
Shadow, so that partial denudation corresponding with first peripheral region in substrate (100) surface, exposed part constitutes the groove
(12) bottom surface.
7. preparation method according to claim 1, which is characterized in that
It is in the step of being exposed to the photoresist layer (21), the substrate (100) are horizontal positioned, and make light and institute
Stating has inclination angle between the surface of the first peripheral region, so that first peripheral region forms tip-like knot after development
Structure；Or
In the step of being exposed to the photoresist layer (21), the substrate (100) inclination is prevented, and make light and the
The surface of one peripheral region is vertical, so that first peripheral region forms tip-like structure after development.
8. preparation method according to claim 1, which is characterized in that the exposure intensity to first peripheral region is 0.
9. according to claim 1, preparation method described in any one of 6 to 8, which is characterized in that first peripheral region is
It is spaced multiple, the photoresist layer (21) is exposed and is developed, by first peripheral region and described
Two peripheral region form multiple grooves (12), and each groove (12) spacing structure is arranged and surround the microstructured layers (10).
10. preparation method according to claim 9, which is characterized in that is be exposed to the photoresist layer (21)
It is not identical to the exposure intensity of each first peripheral region in step.
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Cited By (1)
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| CN110346855B (en) | 2021-08-31 |
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