CN110344110A - A kind of preparation method of nitrogenous semiconductor nano material - Google Patents
A kind of preparation method of nitrogenous semiconductor nano material Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G11/00—Compounds of cadmium
- C01G11/02—Sulfides
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- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G15/00—Compounds of gallium, indium or thallium
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
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- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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- C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
- C01P2004/13—Nanotubes
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- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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- C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
- C01P2004/16—Nanowires or nanorods, i.e. solid nanofibres with two nearly equal dimensions between 1-100 nanometer
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- C—CHEMISTRY; METALLURGY
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- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
Abstract
The invention belongs to field of nanometer material technology, especially a kind of preparation method of nitrogenous semiconductor nano material, it is more single for the preparation method of existing nitrogenous semiconductor nano material, the poor problem of selectivity, the preparation method for now proposing the following nitrogenous semiconductor nano material of scheme kind, method includes the following steps: microemulsion method prepares ultra-fine grain；By transparent water droplet, (w/o) or the monodisperse system formed, the partial size of micro-structure are 5~70nm in the oil, are w/o (reversed phase micelle) type；The oil droplet monodisperse system that (O/W) is formed in water, the partial size of micro-structure are 5~70nm, are O/W type；Mechanism 1, A increase Yu Shuihe, and B increases Yu Shuihe, A and B and reacts in water core；Mechanism 2, A increase Yu Shuihe, and B exists and in solution, B enters in the water core of A reacts；The present invention just prepares nano material with a variety of preparation methods, provides a variety of preparation selections for user.
Description
Technical field
The present invention relates to technical field of nano material more particularly to a kind of preparation methods of nitrogenous semiconductor nano material.
Background technique
Nano material refers to that at least one dimension is in nano-scale (0.1-100 nm) or is made by them in three dimensions
For the material that basic unit is constituted, this is about as much as the scale that 10~100 atoms are arranged closely together.It is " nano combined
The functionalization of Synthetic Leather material " and " application of the nano material in vacuum insulation plate " 2 collaborative projects obtain compared with
Big progress.With negative ion releasing function and burst size up to 2000 or more Synthetic Leather meets ecological, environmental protective synthesis
Leather strategy upgrading direction, waits for a few days ago and carries out enlarged experiment research.The successful research and development of the product and further industrialization can spokes
Penetrate the updating and upgrading of a product for driving more than 300 peer enterprises.The nano combined insulation core material thermal coefficient that alliance prepares is controllable
It is made as down to 4.4mW/mK.The product realizes scale up test in enterprise, just in construction scale metaplasia producing line.Nanometer skill
The broad scope of art may include the side such as nano material technology and nanofabrication technique, nano measurement technology, nano application technology
Face.Wherein nano material technology focuses on the production (Ultramicro-powder, plated film, nano modified material etc.) of nano-functional material, property
It can detection technique (performances such as chemical composition, micro-structure, configuration of surface, object, change, electricity, magnetic, heat and optics).Nanoprocessing skill
Art includes precision processing technology (energy beam processing etc.) and Scanning probe technique.Nano semiconductor material is by silicon, GaAs etc.
Nano material made of semiconductor material has many excellent properties.For example, the quantum tunneling in nano semiconductor material is imitated
Should make that the electron transport of certain semiconductor materials is unusual, conductivity reduces, electric thermal coefficient also with the reduction of particle size and
Decline, or even there is negative value.These characteristics play an important role in fields such as LSI devices, photoelectric devices.
It can prepare that incident photon-to-electron conversion efficiency is high, it is novel to work normally in rainy days using semi-conductor nano particles
Solar battery.Since the electrons and holes generated when the irradiation of Nano semiconductor particles light have stronger reduction and oxidation
Ability, thus it can aoxidize toxic inorganic matter, most of organic matters of degrading, ultimately generate nontoxic, tasteless carbon dioxide,
Water etc., so, solar energy catalytic decomposition inorganic matter and organic matter can be utilized by semi-conductor nano particles；
The preparation method of existing nitrogenous semiconductor nano material is more single, and selectivity is poor, thus it is proposed that one
The preparation method of nitrogenous semiconductor nano material is planted to solve the above problems.
Summary of the invention
The purpose of the present invention is to solve problems of the prior art, and the one kind proposed is received containing nitrogen semi-conductor
The preparation method of rice material.
To achieve the goals above, present invention employs following technical solutions:
1, a kind of preparation method of nitrogenous semiconductor nano material, method includes the following steps:
Step (1) microemulsion method prepares ultra-fine grain；
1-1. by transparent water droplet (w/o) or the monodisperse system formed in the oil, the partial size of micro-structure is 5~
70nm is w/o (reversed phase micelle) type；
The 1-2. oil droplet monodisperse system that (O/W) is formed in water, the partial size of micro-structure are 5~70nm, are O/W type；
1-3. mechanism 1, A increase Yu Shuihe, and B increases Yu Shuihe, A and B and reacts in water core；
1-4. mechanism 2, A increase Yu Shuihe, and B exists and in solution, B enters in the water core of A reacts；
1-5. mechanism 3, A increase Yu Shuihe, and B is gas, and the water core reacted in A carries out；Step (2) Template synthesis nanometer
Material；
1-1. prepares nanoparticle, and molecular sieve Na-Y draws upper zeolite through ion exchange, by Cd ion, and then HHS gas exists
In the hole of zeolite, CdS nano-corpuscule is formed；
1-2. prepares nano wire, with the In203 nanometer of electro-deposition and oxidizing process preparation rule in anodic oxidation aluminium formwork
During line, nanoparticle and matrix metal are co-deposited, the presence of nanoparticle will affect electrocrystallization process, make matrix metal
Crystal grain greatly refine, the crystal grain of matrix metal becomes nanocrystalline；
1-3. alumina formwork enters in Na2S solution the sodium hexametaphosphate solution that CdCl2 after about 10Min, is added, preparation
The CdS nano-tube array of both ends open；
The superlattices and quantum-well materials of step (3) molecular beam epitaxy preparation；
Monocrystal chip is placed on heating evaporation under the ultra-high vacuum environment of the 10 1 SPa orders of magnitude by 1-1., by coating materials component
Atom (or molecule) is ejected on the substrate of heating epitaxial diposition into film according to a certain percentage；
The pressure of cvd reactive chamber is maintained 1.33-10SPa by 1-2., and electron beam directly hits the center of source material, will be single
Brilliant substrate is heated into liquid, and in the liquid state, atom is evaporated from material, overflows, is deposited in from the opening of jet units
On the surface of wafer；
Step (4) metal-organic chemical vapor precipitating prepares superlattice film；
1-1. deposit of gallium arsenide (GaAS) in VPE is exactly a kind of halide technique, and hot-zone is by nl race halide
(transferring) is formed, and cold-zone deposits 11 work-w compounds of group.
In the metallorganic technique of GaAS, (CH3) 3Ga enters reaction chamber with As and reacts 1-2., forms GaAS, instead
Answer formula are as follows: (CH3) 3Ga+AsH3=GaAS+3CH4；
Step (5) laser ablation method prepares nano material；
1-1. will first be mixed with a certain proportion of catalyst target powder briquet, be put into a high quartz Guan Zhen
Degassing is toasted in empty furnace, and target is heated to 1200 DEG C or so after pretreatment；
1-2. beam of laser melts target, while being blown into flow is 50cm, and the protection ammonia of/min or so is kept
Prepared nano material is collected in the air pressure of (400~-700) x133.3Pa near gas outlet by water cooling collector.
It is had the beneficial effect that in the present invention:
1, film is easily prepared, and synthetic method is simple；The tubular material of diameter very little can be synthesized；Since fenestra aperture is big
It is small -- it causes, preparation nano material equally has that aperture is identical, monodispersed structure；The nanotube and nanometer formed in fenestra
Fiber is easy to separate from template, and compared with other technologies of preparing, MBE the preparation method has following characteristics: UHV condition
Lower residual gas impurity is few, film surface can be kept to clean；
2, solid sample is made sheet and is placed on sample stage, at sample surfaces on laser beam focus points.Swashed using ruby
Light device carries out a laser bombardment, and a diameter very little dell can be generated on sample, consumes sample by plasma flow mistake
Sample surfaces, then plasmatorch is imported through a conduit, sample ionizes in torch.Laser burning sympathize laser used be it is high-power,
Height repeats laser, large area sampling.Sampling uniformity is good in this way, and is not limited by sample type.Using laser ablation
Mass-spectrometric technique can analyze sample tiny area.
Specific embodiment
The technical scheme in the embodiments of the invention will be clearly and completely described below, it is clear that described reality
Applying example is only a part of the embodiment of the present invention, instead of all the embodiments.
In addition, term " first ", " second " are used for description purposes only, it is not understood to indicate or imply relatively important
Property or implicitly indicate the quantity of indicated technical characteristic." first " is defined as a result, the feature of " second " can be expressed
Or implicitly include one or more of the features.In the description of the present invention, the meaning of " plurality " is two or two
More than a, unless otherwise specifically defined.
In addition, term " first ", " second " are used for description purposes only, it is not understood to indicate or imply relatively important
Property or implicitly indicate the quantity of indicated technical characteristic." first " is defined as a result, the feature of " second " can be expressed
Or implicitly include one or more of the features.In the description of the present invention, the meaning of " plurality " is two or two
More than a, unless otherwise specifically defined.
In the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " fixation "
Equal terms shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can be with
It is mechanical connection, is also possible to be electrically connected；It can be directly connected, two can also be can be indirectly connected through an intermediary
Connection inside a element.For the ordinary skill in the art, above-mentioned term can be understood as the case may be
Concrete meaning in the present invention.
A kind of preparation method of nitrogenous semiconductor nano material, which is characterized in that method includes the following steps:
Step (1) microemulsion method prepares ultra-fine grain；
1-1. by transparent water droplet (w/o) or the monodisperse system formed in the oil, the partial size of micro-structure is 5~
70nm is w/o (reversed phase micelle) type；
The 1-2.1-2. oil droplet monodisperse system that (O/W) is formed in water, the partial size of micro-structure are 5~70nm, are O/
W type；
1-3. mechanism 1, A increase Yu Shuihe, and B increases Yu Shuihe, A and B and reacts in water core；
1-4. mechanism 2, A increase Yu Shuihe, and B exists and in solution, B enters in the water core of A reacts；
1-5. mechanism 3, A increase Yu Shuihe, and B is gas, and the water core reacted in A carries out；
Microemulsion is by oil, water, emulsifier and agent is helped to form stable transparent of isotropy, thermodynamic property or half
Transparent colloid dispersion, dispersed phase size are nanoscale.From microcosmic angle analysis, with surfactant interface film institute
The characteristics of stable microemulsion prepares ultra-fine grain, this ultra-fine grain is: particle surface wraps up layer of surface active agent molecule,
Make to be not easy to coalesce between particle；By selecting different surfactant molecules that can modify particle surface, and control
The size of particle.
Step (2) Template synthesis nano material；
1-1. prepares nanoparticle, and molecular sieve Na-Y draws upper zeolite through ion exchange, by Cd ion, and then HHS gas exists
In the hole of zeolite, CdS nano-corpuscule is formed；
1-2. prepares nano wire, with the In203 nanometer of electro-deposition and oxidizing process preparation rule in anodic oxidation aluminium formwork
During line, nanoparticle and matrix metal are co-deposited, the presence of nanoparticle will affect electrocrystallization process, make matrix metal
Crystal grain greatly refine, the crystal grain of matrix metal becomes nanocrystalline；
1-3. alumina formwork enters in Na2S solution the sodium hexametaphosphate solution that CdCl2 after about 10Min, is added, preparation
The CdS nano-tube array of both ends open；
Template is the effective technology for synthesizing the monodimension nanometer materials such as nano wire and nanotube, has good controllability,
The size of synthetic material, pattern, structure and arrangement etc. are controlled using the debugging effect of its space restriction effect and template
System；Using aperture is nanoscale to micron-sized porous material as template, and in conjunction with electrochemical process, deposit: method, colloidal sol one are solidifying
The technologies such as glue method and vapor deposition make material atom or ion precipitation on template hole wall, form required nanostructure 8).
Template, which prepares nano material, has following features: film is easily prepared, and synthetic method is simple；The pipe of diameter very little can be synthesized
Shape material；Since fenestra pore size causes, preparation nano material equally has that aperture is identical, monodispersed structure；In film
The nanotube and nanofiber formed in hole is easy to separate from template；
The superlattices and quantum-well materials of step (3) molecular beam epitaxy preparation；
Monocrystal chip is placed on heating evaporation under the ultra-high vacuum environment of the 10-SPa order of magnitude by 1-1., by coating materials component
Atom (or molecule) is ejected on the substrate of heating epitaxial diposition into film according to a certain percentage；
The pressure of cvd reactive chamber is maintained 1.33-10SPa by 1-2., and electron beam directly hits the center of source material, will be single
Brilliant substrate is heated into liquid, and in the liquid state, atom is evaporated from material, overflows, is deposited in from the opening of jet units
On the surface of wafer；
Template is the effective technology for synthesizing the monodimension nanometer materials such as nano wire and nanotube, has good controllability,
The size of synthetic material, pattern, structure and arrangement etc. are controlled using the debugging effect of its space restriction effect and template
System；Using aperture is nanoscale to micron-sized porous material as template, and in conjunction with electrochemical process, deposit: method, colloidal sol one are solidifying
The technologies such as glue method and vapor deposition make material atom or ion precipitation on template hole wall, form required nanostructure.Mould
Plate method, which prepares nano material, has following features: film is easily prepared, and synthetic method is simple；The tubulose of diameter very little can be synthesized
Material；Due to fenestra pore size -- it causes, preparation nano material equally has that aperture is identical, monodispersed structure；In fenestra
The nanotube and nanofiber of middle formation are easy to separate from template, and compared with other technologies of preparing, MBE the preparation method has
Following characteristics: residual gas impurity is few under UHV condition, film surface can be kept to clean；In (500-600 DEG C) life of low temperature F
Long 111 1 V races, mono- VI race of H and w group element compound film, the speed of growth extremely slow (1 one 10pm/h) are raw for stratiform because of film
It is long, therefore can get the film that surface defect is few, the uniformity is high；Since it is convenient for control concentration of component and impurity concentration, institute
The device of impurity concentration and component jumpy can be prepared；It can be seen in situ with reflection high energy electron diffraction device
Examine the growing state of film crystal；
Step (4) metal-organic chemical vapor precipitating prepares superlattice film；
1-1. deposit of gallium arsenide (GaAS) in VPE is exactly a kind of halide technique, and hot-zone is by nl race halide
(transferring) is formed, and cold-zone deposits 11 work-w compounds of group；
In the metallorganic technique of GaAS, (CH3) 3Ga enters reaction chamber with As and reacts 1-2., forms GaAS, instead
Answer formula are as follows: (CH3) 3Ga+AsH3=GaAS+3CH4；
MOCVD also has the ability of the different multilayer films of preparation chemical constituent；The film component of MOCVD is with gas
Body form enters reaction chamber, switchs easily controllable film composition by control carrier gas flux and switching, Film Contamination degree compared with
It is small；Using metallorganic as source, low temperature depositing can reduce vacancy concentration and defect in film；It can the various gases of accurate perception
Flow, control ingredient, conduction type, carrier concentration, thickness of epitaxial layer etc.；
Step (5) laser ablation method prepares nano material；
1-1. will first be mixed with a certain proportion of catalyst target powder briquet, be put into a high quartz Guan Zhen
Degassing is toasted in empty furnace, and target is heated to 1200 DEG C or so after pretreatment；
1-2. beam of laser melts target, while being blown into flow is 50cm, and the protection ammonia of/min or so is kept
Prepared nano material is collected in the air pressure of (400~-700) x133.3Pa near gas outlet by water cooling collector；
Solid sample is made sheet and is placed on sample stage, at sample surfaces on laser beam focus points.
A laser bombardment is carried out using ruby laser, a diameter very little dell can be generated on sample, is consumed
Sample crosses sample surfaces by plasma flow, then imports plasmatorch through a conduit, and sample ionizes in torch.Laser is burnt
Sympathizing laser used is high-power, Gao Chongfu laser, large area sampling.Sampling uniformity is good in this way, and not by sample
Type limitation.Using laser ablation mass-spectrometric technique, sample tiny area can be analyzed.
In the present invention, microemulsion is by oil, water, emulsifier and to help agent to form isotropy, thermodynamic property stable
Transparent or semitransparent colloidal dispersion system, dispersed phase size are nanoscale.From microcosmic angle analysis, surfactant is used
The characteristics of stable microemulsion of interfacial film prepares ultra-fine grain, this ultra-fine grain is: particle surface wraps up layer of surface activity
Agent molecule makes to be not easy to coalesce between particle；By selecting different surfactant molecules that can modify particle surface,
And control the size of particle；
Template is the effective technology for synthesizing the monodimension nanometer materials such as nano wire and nanotube, has good controllability,
The size of synthetic material, pattern, structure and arrangement etc. are controlled using the debugging effect of its space restriction effect and template
System；Using aperture is nanoscale to micron-sized porous material as template, and in conjunction with electrochemical process, deposit: method, colloidal sol one are solidifying
The technologies such as glue method and vapor deposition make material atom or ion precipitation on template hole wall, form required nanostructure
8).Template, which prepares nano material, has following features: film is easily prepared, and synthetic method is simple；Diameter very little can be synthesized
Tubular material；Since fenestra pore size causes, preparation nano material equally has that aperture is identical, monodispersed structure；In film
The nanotube and nanofiber formed in hole is easy to separate from template；
Template is the effective technology for synthesizing the monodimension nanometer materials such as nano wire and nanotube, has good controllability,
The size of synthetic material, pattern, structure and arrangement etc. are controlled using the debugging effect of its space restriction effect and template
System；Using aperture is nanoscale to micron-sized porous material as template, and in conjunction with electrochemical process, deposit: method, colloidal sol one are solidifying
The technologies such as glue method and vapor deposition make material atom or ion precipitation on template hole wall, form required nanostructure.
Template, which prepares nano material, has following features: film is easily prepared, and synthetic method is simple；The pipe of diameter very little can be synthesized
Shape material；Due to fenestra pore size -- it causes, preparation nano material equally has that aperture is identical, monodispersed structure；In fenestra
The nanotube and nanofiber of middle formation are easy to separate from template, and compared with other technologies of preparing, MBE the preparation method has
Following characteristics: residual gas impurity is few under UHV condition, film surface can be kept to clean；In (500-600 DEG C) life of low temperature F
Long 111 1 V races, mono- VI race of H and w group element compound film, the speed of growth extremely slow (1 one 10pm/h) are raw for stratiform because of film
It is long, therefore can get the film that surface defect is few, the uniformity is high；Since it is convenient for control concentration of component and impurity concentration, institute
The device of impurity concentration and component jumpy can be prepared；It can be seen in situ with reflection high energy electron diffraction device
Examine the growing state of film crystal；
MOCVD also has the ability of the different multilayer films of preparation chemical constituent；The film component of MOCVD is with gas
Body form enters reaction chamber, switchs easily controllable film composition by control carrier gas flux and switching, Film Contamination degree compared with
It is small；Using metallorganic as source, low temperature depositing can reduce vacancy concentration and defect in film；It can the various gases of accurate perception
Flow, control ingredient, conduction type, carrier concentration, thickness of epitaxial layer etc.；
Solid sample is made sheet and is placed on sample stage, at sample surfaces on laser beam focus points.Use ruby laser
Device carries out a laser bombardment, and a diameter very little dell can be generated on sample, consumes sample by plasma flow and crosses sample
Product surface, then plasmatorch is imported through a conduit, sample ionizes in torch.It is high-power, high that laser burning, which sympathizes laser used,
Repeat laser, large area sampling.Sampling uniformity is good in this way, and is not limited by sample type.Using laser ablation matter
Spectral technology can analyze sample tiny area.
The foregoing is only a preferred embodiment of the present invention, but protection scope of the present invention be not limited to
This, anyone skilled in the art in the technical scope disclosed by the present invention, according to the technique and scheme of the present invention
And its inventive concept is subject to equivalent substitution or change, should be covered by the protection scope of the present invention.
Claims (1)
1. a kind of preparation method of nitrogenous semiconductor nano material, which is characterized in that method includes the following steps:
Step (1) microemulsion method prepares ultra-fine grain；
By transparent water droplet, (w/o) or the monodisperse system formed, the partial size of micro-structure are 5~70nm to 1-1. in the oil, are
W/o (reversed phase micelle) type；
The 1-2. oil droplet monodisperse system that (O/W) is formed in water, the partial size of micro-structure are 5~70nm, are O/W type；
1-3. mechanism 1, A increase Yu Shuihe, and B increases Yu Shuihe, A and B and reacts in water core；
1-4. mechanism 2, A increase Yu Shuihe, and B exists and in solution, B enters in the water core of A reacts；
1-5. mechanism 3, A increase Yu Shuihe, and B is gas, and the water core reacted in A carries out；
Step (2) Template synthesis nano material；
1-1. prepares nanoparticle, and molecular sieve Na-Y draws upper zeolite through ion exchange, by Cd ion, and then HHS gas is in zeolite
Hole in, formed CdS nano-corpuscule；
1-2. prepares nano wire, with the In203 nano wire of electro-deposition and oxidizing process preparation rule in anodic oxidation aluminium formwork, receives
During rice particle and matrix metal are co-deposited, the presence of nanoparticle will affect electrocrystallization process, make the crystal grain of matrix metal
It greatly refines, the crystal grain of matrix metal becomes nanocrystalline；
1-3. alumina formwork enters in Na2S solution the sodium hexametaphosphate solution that CdCl2 after about 10Min, is added, and prepares both ends
The CdS nano-tube array of opening；
The superlattices and quantum-well materials of step (3) molecular beam epitaxy preparation；
Monocrystal chip is placed on heating evaporation under the ultra-high vacuum environment of the 10 1 SPa orders of magnitude by 1-1., by the atom of coating materials component
(or molecule) is ejected on the substrate of heating epitaxial diposition into film according to a certain percentage；
The pressure of cvd reactive chamber is maintained 1.33-10SPa by 1-2., and electron beam directly hits the center of source material, by monocrystalline base
Piece is heated into liquid, and in the liquid state, atom is evaporated from material, overflows from the opening of jet units, is deposited in wafer
Surface on；
Step (4) metal-organic chemical vapor precipitating prepares superlattice film；
1-1. deposit of gallium arsenide (GaAS) in VPE is exactly a kind of halide technique, and shape (is transferred) by nl race halide in hot-zone
At cold-zone deposits 11 work-w compounds of group；
In the metallorganic technique of GaAS, (CH3) 3Ga enters reaction chamber with As and reacts 1-2., forms GaAS, reaction equation
Are as follows: (CH3) 3Ga+AsH3=GaAS+3CH4；
Step (5) laser ablation method prepares nano material；
1-1. will first be mixed with a certain proportion of catalyst target powder briquet, be put into a high quartz pipe vacuum drying oven
Degassing is toasted, target is heated to 1200 DEG C or so after pretreatment；
1-2. with beam of laser melt target, while be blown into flow be 50cm, the protection ammonia of/min or so, keep (400~-
700) prepared nano material is collected in the air pressure of x133.3Pa near gas outlet by water cooling collector.
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| US20040137214A1 (en) * | 2002-10-25 | 2004-07-15 | I-Cherng Chen | Material with surface nanometer functional structure and method of manufacturing the same |
| CN101049905A (en) * | 2006-04-07 | 2007-10-10 | 中国科学院物理研究所 | Preparation method for developing single Nano line or array type Nano lines |
| CN101780946A (en) * | 2009-01-16 | 2010-07-21 | 复旦大学 | Method for preparing ZnSe nano wire films by pulsed laser ablation deposition |
| CN103204537A (en) * | 2013-02-06 | 2013-07-17 | 内蒙古大学 | Preparation method for nano-material with wurtzite structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040137214A1 (en) * | 2002-10-25 | 2004-07-15 | I-Cherng Chen | Material with surface nanometer functional structure and method of manufacturing the same |
| CN101049905A (en) * | 2006-04-07 | 2007-10-10 | 中国科学院物理研究所 | Preparation method for developing single Nano line or array type Nano lines |
| CN101780946A (en) * | 2009-01-16 | 2010-07-21 | 复旦大学 | Method for preparing ZnSe nano wire films by pulsed laser ablation deposition |
| CN103204537A (en) * | 2013-02-06 | 2013-07-17 | 内蒙古大学 | Preparation method for nano-material with wurtzite structure |
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