CN110333276A - A kind of highly integrated electrode of bismuth film and the preparation method and application thereof for fast detection of trace cadmium - Google Patents
A kind of highly integrated electrode of bismuth film and the preparation method and application thereof for fast detection of trace cadmium Download PDFInfo
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Abstract
The present invention provides a kind of highly integrated electrodes of bismuth film for fast detection of trace cadmium and preparation method thereof and the application in Electrochemical Detection.The electrode includes: electrode basement, buffer layer, layer, skin and conversion zone, and electrode uses three-electrode system, and wherein bismuth film is electroplated in working electrode, and to electrode platinum plating, reference electrode plates silver-silver chloride.Electrode is prepared the following steps are included: pre-processing to electrode of the substrate；The pretreated electrode of the substrate is put into plating bismuth solution, bismuth film electrode is made in plating.Electrode maximum sensitivity of the present invention can reach 10ppb, detection time is short, step is simple, high sensitivity, it is at low cost, the quick detection that Determination of Trace Amount Cadmium can be achieved, solve need specific place, large-scale instrument, pre-treatment step testing conditions, and small hand-held instrument and electrochemical workstation can be cooperated to use.
Description
Technical field
The invention belongs to field of electrochemical detection, and in particular to a kind of preparation method of bismuth film electrode, and its in electrochemistry
Application in terms of fast detection of trace cadmium.
Background technique
With the arriving of industrial age, the shortage of environmental protection consciousness causes largely to contain without what effective waste reduction was handled
There is the waste of heavy metal to direct out discharge, results in serious heavy metal pollution, including water body, gas or even soil dirt
Dye, causes certain physiological function to damage, wherein being typically include cadmium (Cd), lead (Pb), mercury after causing heavy metal to enter human body
(Hg) etc..
Micro heavy ion gradually accumulates in water body and plant, causes to endanger to human body by the layer-by-layer accumulation of food chain
Evil, common copper and cadmium are marked as Environment Priority control pollutant, are 129 kinds of harmful substances that Environmental Protection Agency USA announces
Two of them.
Cadmium (Cd) is a kind of heavy metal contaminants, and toxicity is very strong, with chemical property is active, toxicity is lasting in the environment
The characteristics of, and its long half time was up to 10~35 years.Cadmium sulfate is the common existence of cadmium element, generally in addition to ferrous metal
Metallic ore and rock among it is relatively common, also with the presence of the compound forms such as cadmium carbonate, cadmium nitrate, caddy, it is different
Its toxicity level of the cadmium of existing forms is different, and wherein the toxicity level of cadmium nitrate and caddy is higher.
The raw material that cadmium is used as industrial or agricultural are mainly used for battery, plating, preservative and pesticide etc., but eventually arrange
It is put into environment, pollutes.In the modern times, with the rapid development of industry, the consumption of cadmium increases year by year, and therefore, cadmium is released
It high-volume increases, expands the distribution of cadmium in the environment constantly.
It is provided according to China's standard, cadmium content must not exceed 0.005mg/L in Drinking Water, and cadmium element is limited the quantity in rice
For 0.2g/kg, cadmium limitation is 0.1mg/kg in meat.And the World Health Organization provides, maximum permissible intake (MPI) of the human body to cadmium
It for 1 μ g/kgd, therefore is always the important topic of food safety and environmental protection for the exploitation of the instant detector device of cadmium.
The detection method of heavy metal cadmium ion includes instrumental method, such as spectrophotometry, atomic absorption spectrum at present
Method etc., and biology detection includes biosensor detection method and immunological detection etc..These methods require preposition place
Step or large-scale instrument cooperation detection are managed, can not be detected immediately in any detection environment for cadmium the time, and these sides
Fado number detection limit is excessively high, is unfavorable for the detection to trace concentration of cadmium ions, and therefore, research and development have highly selective, highly sensitive
Cadmium element quantitative measurement technology be highly important.
Patent CN107478696A discloses a kind of preparation side of carbon electrode modified glassy carbon electrode for cadmium ion detection
Method, the carbon material of electrode face finish specific surface area with higher and electronics conduction velocity, the spirit of electrode detection cadmium ion
Sensitivity is high, and detection limits lower, strong antijamming capability, reproducible.But glass-carbon electrode price is more expensive, is not suitable for popularizing
Heavy metal examine miniature instrument fastly, it is therefore desirable to find the electrode of a kind of low cost, simple process, easy volume production as fast test examination instrument
Core element.
Patent CN103134839A discloses a kind of method of fast detection of trace heavy metal ion, including electrolytic cell, work
Make electrode signal channel, bismuth pole array, composite construction working electrode, reference electrode and to electrode.This method possesses three-dimensional
Flower shape, nano wire, three kinds of different structures of nanometer pinpoint bismuth pole array, solve in the prior art only using a kind of structure
Working electrode, the problem for causing detection sensitivity and detection limit not high.However the electrode is not suitable for hand-held quickly detects
Instrument, and processing technology is excessively cumbersome, is not suitable for volume production.
In conclusion the fast accurate for trace concentration of cadmium ions detects, there are requirement particular detection environment, need greatly
Type instrument needs the problems such as pre-treatment step, therefore this patent problem to be solved is to provide one kind with highly sensitive, high
Stability, low cost, the detecting electrode that small hand-held instrument and electrochemical workstation can be cooperated.
Summary of the invention
The object of the present invention is to provide a kind of highly integrated electrodes of bismuth film for fast detection of trace cadmium.
The highly integrated electrode matrix surface of bismuth film provided by the invention is equipped with buffer layer；Electrode matrix surface or buffer-layer surface
Equipped with layer and skin；Conductive layer surface is equipped with conversion zone.Buffer layer is at least two formation in Ti, W, Mo
Alloy-layer；Layer is layers of copper；Skin is layer gold.Buffer layer thickness is 5~50 μm；Layer is with a thickness of 35~40
μm；Skin is with a thickness of 0.5~3.0 μm.
The highly integrated electrode of bismuth film provided by the invention uses three-electrode system, respectively working electrode, reference electrode with it is right
Electrode.Wherein working electrode plates bismuth film, and reference electrode plates silver-silver chloride, to electrode platinum plating.Three electrodes are generally aligned in the same plane, work
Make electrode and to the distance of electrode between 50~100 μm.
The highly integrated electrode of bismuth film takes the coplanar system of three electrodes, and fixed interelectrode distance is smaller, can substantially eliminate electrification
The concentration polarization in test is learned, electrode detection accuracy is effectively improved.
The highly integrated electrode of bismuth film is interdigital electrode, and interdigital electrode detection zone is as working electrode and USB port conducting shell
It is connected, ink box dam is equipped with around interdigital electrode detection zone, prevents testing liquid from overflowing electrode detection region.
The highly integrated electrode of bismuth film can be used cooperatively with small handheld instrument, in any environment directly to testing liquid
Immediately it is detected, and can directly be connect with the USB interface of electrochemical workstation, instantaneous transmission data.
The highly integrated electrode matrix of bismuth film is any one in silicon substrate, high molecular polymer or ceramics, and ceramics are led with height
Hot property and high dielectric constant are suitble to processing fine-line；High molecular polymer includes the materials such as FR-4, PET, PI, BT, is in
Electrode machining cost consideration, this patent select FR-4 material as electrode base materials.
The present invention carries out the modification of bismuth film on FR-4 interdigital electrode surface using preplating bismuth embrane method, and realizes Determination of Trace Amount Cadmium with this
The quick detection of ion, compared with the electrode of prior art preparation, bismuth film electrode prepared by the present invention possess lower processing cost,
More environmentally friendly friendly process and higher sensitivity.
It is a further object of the present invention to provide a kind of preparation sides of highly integrated electrode of bismuth film for fast detection of trace cadmium
Method.
The technical solution that the preparation of bismuth film electrode of the invention is taken includes the following steps:
S1: electrode of the substrate is pre-processed；
S2: pretreated electrode of the substrate is put into plating bismuth solution, bismuth film electrode is made in plating.
The electrode of the substrate that the present invention uses is high molecular polymer interdigital electrode, it is contemplated that electrode performance and cost are selected
Modified Bismuth film is electroplated as electrode of the substrate in FR-4 interdigital electrode in electrode of the substrate, and traditional mercury film electrode is substituted with this, makes
Standby environmental-friendly type electrode.
In step S1 of the present invention, electrode of the substrate pretreatment the following steps are included:
(1) electrode of the substrate is placed in ethanol solution, is cleaned by ultrasonic 30min；
(2) processed electrode of the substrate is put into the ammonium persulfate mixed solution of 10% sulfuric acid solution and 10g/L, is impregnated
30~60s is washed with deionized water.
It is electrode surface oil removal treatment that electrode of the substrate, which is placed in ethanol solution and is cleaned by ultrasonic, and electrode is avoided before plating
The greasy dirt on surface interferes；Electrode of the substrate after oil removing is impregnated in dilute sulfuric acid, surface rusty stain and oxide is can remove, is
Plating bismuth film is prepared in next step.
The present invention prepares bismuth film electrode using preplating bismuth embrane method, the electrochemical parameter and bismuth when can be electroplated by changing from
The concentration adjustment plating bismuth effect of son, and the adjusting solution ph such as ammonium acetate and potassium tartrate is added in the plating solution and improves solution and leads
Electric rate.
In step S2 of the present invention, the solution composition of plating are as follows: bismuth nitrate 0.2mol/L, lithium chloride 0.5mol/L, sulfuric acid
1.0mol/L, potassium chloride 0.5mol/L, potassium tartrate 20g/L, ethylenediamine tetra-acetic acid 10g/L, ammonium acetate 20g/L.
The plating area area of the working electrode of the coplanar interdigital electrode of three electrode prepared by the present invention is too small, electric current when plating
Density is excessive or electroplating time is too short can all generate plating leakage phenomenon.
In step S2 of the present invention, electroplating time is 180s~300s, and preferably 240s, current density is 0.8~1.4ASD,
Preferably 0.8ASD.
It is a further object of the present invention to provide a kind of preparation sides of highly integrated electrode of bismuth film for fast detection of trace cadmium
The application method of method.
For the present invention using the trace cadmium ion in electrochemical method determining water body, being will be to measured ion Cd2+Deposition is enriched in
Then working electrode surface is dissolved out with differential pulse method.Cd can be qualitatively judged according to the current potential at dissolution peak2+, and according to
Peak point current can be with quantitative detection Cd2+.Its detection mechanism is as follows:
(1) enriching step, Cd2+It is reduced to form cadmium bismuth alloy；
(2) cadmium is reoxidized and in rework solution: Cd (Bi) → Cd2++2e-.In this step, the amount of cadmium element is by making
It is determined with sensitive electrochemical techniques, measure detection curve using anodic stripping voltammetry (CVS) in this patent and calculates electricity
Pole sensitivity.
Electro-chemical test of the invention is carried out in three-electrode system, and wherein bismuth film electrode is working electrode, and platinum electrode is
To electrode, silver-silver chloride electrode is reference electrode, and test solution is the 0.1M PBS solution that pH is 7.0.
Electro-chemical test of the invention uses anodic stripping voltammetry, and scanning current potential is -1.0V~-0.4V, scanning speed
For 100mV/s, electro-chemical test environment maintains 25 ± 2 DEG C of room temperature.
The highly integrated electrode of bismuth film prepared by the present invention can accurately measure trace concentration of cadmium ions.
The sensitivity of the highly integrated electrode detection cadmium ion of bismuth film prepared by the present invention can reach 10ppb.
The beneficial effects of the present invention are:
(1) present invention uses the coplanar system of three electrodes, by reducing interelectrode constant spacing, greatly reduces concentration polarization
Change, to improve the accuracy of electrode detection.
(2) present invention has abandoned traditional mercury film electrode, simple process, cost using bismuth film electrode as working electrode
It is lower, to more environment-friendly.
(3) the highly integrated electrode of bismuth film of the invention can cooperate with the fast test examination instrument of small handheld, realize fast detection of trace
Concentration of cadmium ions can be used for food safety, environmental monitoring, geology spy without precondition and large-scale instrument, detection environmental requirement
The multiple fields such as survey, public safety.
Detailed description of the invention
Invention is described further using attached drawing, but the embodiments in the accompanying drawings do not constitute any limitation to the present invention,
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to the following drawings
Its attached drawing.
Fig. 1 is the highly integrated electrode of bismuth film obtained in FR-4 three-electrode system electrode surface plating bismuth film.
Fig. 2 is that the highly integrated electrode of bismuth film is bent to the cyclic voltammetric of various concentration cadmium element measurement in 0.1M PBS buffer solution
Line.
Fig. 3 is the anodic stripping voltammetry curve of the highly integrated determination of electrode Trace Cadmium In Water of bismuth film.
Fig. 4 is the detection performance anode of the common bismuth film electrode bismuth film interdigital electrode coplanar with three electrodes under equal conditions
Stripping Voltammetry curve comparison figure.
Fig. 5 is that bismuth film electrode when current density is 1.0ASD when bismuth film is electroplated plates bismuth figure.
Fig. 6 is the common bismuth film electrode obtained in FR-4 single electrode system electrode surface plating bismuth film.
Specific embodiment
For a better understanding of the present invention, below with reference to the embodiment content that the present invention is furture elucidated, but it is of the invention
Content is not limited solely to the following examples.
It is a kind of for measuring the preparation method of the highly integrated electrode of bismuth film of micro lead in water, specifically includes the following steps:
S1: electrode of the substrate is pre-processed；
S2: pretreated electrode of the substrate is put into plating bismuth solution, bismuth film electrode is made in plating.
Further, electrode of the substrate used in process made above is high score sub-electrode, preferably FR-4 electrode.
Further, in step S1, electrode of the substrate pretreatment the following steps are included:
(1) electrode of the substrate is placed in ethanol solution, is cleaned by ultrasonic 30min；
(2) electrode of the substrate for crossing aforementioned processing is put into the ammonium persulfate mixed solution of 10% sulfuric acid solution and 10g/L,
30~60s is impregnated, is washed with deionized water.
Further, in step S2, the solution composition of bismuth is electroplated are as follows: bismuth nitrate 0.2mol/L, lithium chloride 0.5mol/L, sulfuric acid
1.0mol/L, potassium chloride 0.5mol/L, potassium tartrate 20g/L, ethylenediamine tetra-acetic acid 10g/L, ammonium acetate 20g/L.
Further, in step S2, electroplating time is 180s~300s, and current density is 0.8~1.4ASD；Preferably, it walks
In rapid S2, electroplating time 240s, current density 0.8ASD.
The contents of the present invention are described in further detail below by way of specific embodiment.
Embodiment 1
The preparation of the highly integrated electrode of bismuth film:
FR-4 three-electrode system electrode is placed in ethanol solution, puts it into 10% sulfuric acid solution after being cleaned by ultrasonic 30min
In the ammonium persulfate mixed solution of 10g/L, 60s is impregnated, is washed with deionized water spare.Pretreated FR-4 electrode is put
Enter to plate in bismuth solution, bismuth film electrode is made in plating, and electroplating solution group becomes bismuth nitrate 0.2mol/L, lithium chloride 0.5mol/L, sulphur
Sour 1.0mol/L, potassium chloride 0.5mol/L, potassium tartrate 20g/L, ethylenediamine tetra-acetic acid 10g/L, ammonium acetate 20g/L, when plating
Between be 240s, current density 0.8ASD takes out electrode after plating, is rinsed three times with deionized water, obtains bismuth film height collection
At electrode, as shown in Fig. 1.
It is to electrode with platinum, silver-silver chloride is reference electrode, and bismuth film electrode is working electrode, and it is 7.0 that test solution, which is pH,
0.1M PBS buffer solution, scanning current potential be -1.0V~-0.4V, scanning speed 100mV/s, electro-chemical test environment dimension
Stripping voltammetry test is carried out under conditions of holding 25 ± 2 DEG C of room temperature.
Embodiment 2
Detection of the highly integrated electrode of bismuth film to cadmium ion:
The highly integrated electrode of bismuth film is prepared according to the step of embodiment 1, and is put into 0.1M PBS buffer solution (pH7.0)
In, and various concentration cadmium-ion solution, respectively 40mg/L, 50mg/L, 60mg/L, 70mg/L, 80mg/L is added, it tests it and follows
Ring volt-ampere curve figure obtains test result such as attached drawing 2.Dissolution peak heights of the visible cadmium ion under various concentration are in incremental in figure
Trend, according to test result, it can be deduced that conclusion: the highly integrated electrode of bismuth film of the invention can be used for the measurement of cadmium ion, and
There is outstanding detection performance under low concentration.
Embodiment 3
Standard curve determination of the highly integrated electrode of bismuth film to cadmium ion:
The highly integrated electrode of bismuth film is prepared according to the step of embodiment 1, and is put into 0.1M PBS buffer solution (pH7.0)
In, and the lead ion solution of various concentration, respectively 2mg/L, 4mg/L, 6mg/L, 8mg/L, 10mg/L is added, it is molten using anode
Voltammetry is tested out, and scanning voltage is -1.0V~-0.4V, scanning speed 100mV/s, obtains test result such as attached drawing 3.Figure
In the dissolution peak of visible cadmium ion increase with concentration of cadmium ions and be lifted, peak current also increases, and detection sensitivity is reachable
To 0.0001A/V, according to the calculating of standard curve, it can be deduced that conclusion: (the R within the scope of 2~10mg/L concentration gradient2=
0.996), the highly integrated electrode detection sensitivity of bismuth film of the invention can reach 10ppb, i.e., the highly integrated electrode of bismuth film of the invention can
The metastable measurement of essence is carried out for trace cadmium ion within the scope of a certain concentration.
Comparative example
The preparation of common bismuth film electrode:
FR-4 single electrode system electrode is placed in ethanol solution, its back side glue is sealed after being cleaned by ultrasonic 30min, is reserved just
Face plating area is put into the ammonium persulfate mixed solution of 10% sulfuric acid solution and 10g/L, is impregnated 60s, is washed with deionized water
It is spare, as shown in Fig. 6.
Using bismuth film electrode as working electrode, test solution is 0.1M PBS buffer solution that pH is 7.0, scanning current potential is-
1.0V~-0.4V, scanning speed 100mV/s, electro-chemical test environment carry out dissolution volt under conditions of maintaining 25 ± 2 DEG C of room temperature
The test of peace method.
The highly integrated electrode of bismuth film made from common bismuth film electrode made from comparative example and embodiment 1 possesses identical size and face
Two kinds of electrodes are placed in 0.1M PBS buffer solution, add the cadmium-ion solution of same concentration by long-pending working electrode, are carried out double
The Stripping Voltammetry test of side's measurement cadmium ion ability comparison, obtains test result such as attached drawing 4.It is seen that embodiment 1 is made
The dissolution peak peak type of the standby highly integrated electrode of bismuth film is more prominent, and peak current is also larger, and the dissolution peak phase of common bismuth film electrode
To more gentle, it may be said that the highly integrated electrode of bismuth film prepared by bright embodiment 1 is sensitiveer for the response of cadmium ion, is measuring
In terms of concentration of cadmium ions advantageously.
Phenetic analysis
Attached drawing 1 is the schematic diagram of the highly integrated electrode of bismuth film prepared in embodiment 1.Electrode base material is FR-4, and electrode uses
Three-electrode system, including working electrode, reference electrode and to electrode.Wherein working electrode plates bismuth film, and reference electrode is silver-plated-chlorination
Silver, to electrode platinum plating, three electrode runs parallels are integrated, and electrode ports are adapted to USB interface in the same plane, can directly with electrification
Work station connection is learned, realizes detection immediately and transmitting detection data.Ink box dam is equipped with around electrode working electrode detection zone,
Testing liquid can be effectively prevent to pour down or forth or reveal in the detection process.
Attached drawing 2 is 0.1M PBS of the highly integrated electrode of bismuth film in the cadmium-ion solution containing various concentration of the preparation of embodiment 1
Cyclic voltammetry curve figure in buffer solution (pH7.0), scanning speed 100mV/s.Visible cadmium ion is in bismuth film height collection in figure
It is less than -0.9V at spike potential is deposited on electrode, dissolves out peak position in -0.7V or so, curve is more stable, and molten under various concentration
Peak heights present increasing trend out, illustrate that the highly integrated electrode of bismuth film of the invention can be used for the measurement of cadmium ion, and at low concentrations
With outstanding detection performance.
Attached drawing 3 is that the highly integrated electrode of bismuth film prepared by embodiment 1 surveys the standard curve determination of trace cadmium ion, is specifically existed
In 0.1M PBS buffer solution (pH7.0), its Stripping Voltammetry curve in various concentration cadmium ion, concentration of cadmium ions model are tested
It encloses for 2~10mg/L, scanning voltage is -1.0V~-0.4V, scanning speed 100mV/s.It is visible with concentration of cadmium ions in figure
Increase, the dissolution peak positioned at -0.80V or so is gradually lifted, and oxidation current increases linear growth with concentration, according to linear gauge
Calculate (R2=0.996), detection sensitivity can reach 10ppb, illustrate that the highly integrated electrode of bismuth film of the invention can be directed to Determination of Trace Amount Cadmium
Ion carries out the metastable measurement of essence.
Attached drawing 4 is the highly integrated electrode of bismuth film prepared by embodiment 1 and common bismuth film electrode prepared by comparative example in same
The detectability of the cadmium ion of same concentrations is compared under part.It, can be true as it can be seen that both having significantly dissolution peak in figure
It is fixed both that there is the ability that cadmium ion is measured within the scope of a certain concentration, the highly integrated electrode of bismuth film that wherein prepared by embodiment 1
Dissolution peak it is more prominent, oxidation current is significantly enhanced, and illustrates that the highly integrated electrode of bismuth film of the invention possesses faster response
Speed and higher sensitivity and reactivity.This is because present invention employs the coplanar system of three electrodes, by three electrode runs parallels
It is set to same plane and substantially reduces and fix interelectrode line space, greatly reduce concentration polarization, improve electrode
Detection performance.The sensitivity and accuracy of electrode also greatly improved in the interdigital structure of detecting electrode simultaneously.
Attached drawing 5 is plating bismuth pole figure of the common bismuth film electrode of the preparation of comparative example 1 when electroplating current density is 1.0ASD
Piece, bismuth film are integrally in silver color, are uniformly attached on electrode conducting layer.
Attached drawing 6 is the schematic diagram of common bismuth film electrode prepared by comparative example 1.Electrode base material is FR-4, and electrode is using single electricity
Polar body system, only working electrode, working electrode surface plates bismuth film, electrode front buffer layer and conductive layer parameter and embodiment 1 is protected
It holds consistent.Electrode ports are adapted to USB interface, can directly be connect with electrochemical workstation, realize that detection immediately is examined with transmitting
Measured data.Electrode working electrode detection zone area and the working electrode area of embodiment 1 keep almost the same.
It is obvious to a person skilled in the art that invention is not limited to the details of the above exemplary embodiments, Er Qie
In the case where without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, the present embodiments are to be considered as illustrative and not restrictive, and the scope of the present invention is by appended power
Benefit requires rather than above description limits, it is intended that all by what is fallen within the meaning and scope of the equivalent elements of the claims
Variation is included within the present invention.
In addition, it should be understood that although this specification is described in terms of embodiments, but not each embodiment is only wrapped
Containing an independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should
It considers the specification as a whole, the technical solutions in the embodiments can also be by appropriately combined, formation those skilled in the art
The other embodiments that member is understood that.The technical detail being not described in detail in the present invention can pass through appointing in this field
One prior art is realized.Particularly, all technical characterstics being not described in detail can pass through any prior art reality in the present invention
It is existing.
Claims (10)
1. a kind of highly integrated electrode of bismuth film for fast detection of trace cadmium, which is characterized in that the electrode matrix surface is equipped with
Buffer layer；The electrode matrix surface or the buffer-layer surface are equipped with layer and skin；The conductive layer surface
Equipped with conversion zone；The electrode matrix is any one of silicon substrate, high molecular polymer or ceramics；The buffer layer be Ti, W,
At least two alloy-layers formed in Mo；The layer is layers of copper；The skin is layer gold；The buffering thickness
Degree is 5~50 μm；The layer is with a thickness of 35~40 μm；The skin is with a thickness of 0.5~3.0 μm.
2. a kind of highly integrated electrode of bismuth film for fast detection of trace cadmium according to claim 1, which is characterized in that institute
Electrode is stated for working electrode, reference electrode and to the coplanar Integrated electrode of electrode, wherein the working electrode conversion zone is bismuth
Film, described is platinum to electrode reaction layer, and the reference electrode conversion zone is silver-silver chloride.
3. a kind of highly integrated electrode of bismuth film for fast detection of trace cadmium according to claim 1, which is characterized in that institute
Working electrode and the distance to electrode are stated between 50~100 μm.
4. a kind of highly integrated electrode of bismuth film for fast detection of trace cadmium according to claim 1, which is characterized in that institute
Stating electrode is interdigital electrode, is equipped with ink box dam around the interdigital electrode detection zone.
5. a kind of preparation method of highly integrated electrode of bismuth film for fast detection of trace cadmium according to claim 1,
It is characterized in that, comprising the following steps:
S1, electrode of the substrate is pre-processed；
S2: the pretreated electrode of the substrate is put into plating bismuth solution, bismuth film electrode is made in plating.
6. a kind of preparation method of highly integrated electrode of bismuth film for fast detection of trace cadmium according to claim 5,
Be characterized in that, in step S1, electrode of the substrate pretreatment the following steps are included:
(1) electrode of the substrate is placed in ethanol solution, is cleaned by ultrasonic 30min；
(2) the processed electrode of the substrate is put into the ammonium persulfate mixed solution of 10% sulfuric acid solution and 10g/L, is impregnated
30~60s is washed with deionized water.
7. a kind of preparation method of highly integrated electrode of bismuth film for fast detection of trace cadmium according to claim 5,
It is characterized in that, in step S2, the solution composition of the plating are as follows: bismuth nitrate 0.2mol/L, lithium chloride 0.5mol/L, sulfuric acid
1.0mol/L, potassium chloride 0.5mol/L, potassium tartrate 20g/L, ethylenediamine tetra-acetic acid 10g/L, ammonium acetate 20g/L.
8. a kind of preparation method of highly integrated electrode of bismuth film for fast detection of trace cadmium according to claim 5,
It is characterized in that, in step S2, the electroplating time is 180s~300s, and current density is 0.8~1.4ASD.
9. a kind of highly integrated electrode of bismuth film for fast detection of trace cadmium according to claim 1, which is characterized in that institute
Stating bismuth film electrode can be used for fast detection of trace concentration of cadmium ions.
10. a kind of highly integrated electrode of bismuth film for fast detection of trace cadmium according to claim 1, which is characterized in that
The bismuth film electrode is 10ppb to the detection sensitivity of cadmium.
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| CN113702477A (en) * | 2021-04-30 | 2021-11-26 | 广州钰芯智能科技研究院有限公司 | Gold film modified electrode for heavy metal detection and preparation method thereof |
| CN113702456A (en) * | 2021-04-30 | 2021-11-26 | 广州钰芯智能科技研究院有限公司 | Bismuth film modified electrode for heavy metal detection and preparation method thereof |
| CN114002285A (en) * | 2021-10-19 | 2022-02-01 | 广州钰芯智能科技研究院有限公司 | Polyaniline-nano bismuth composite electrode for heavy metal detection and preparation method thereof |
| CN115047053A (en) * | 2022-04-13 | 2022-09-13 | 哈尔滨工业大学 | Preparation method of bismuth-containing screen-printed electrode and application of bismuth-containing screen-printed electrode in heavy metal ion detection |
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