CN110333009B - Piezoelectric sensor - Google Patents
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- CN110333009B CN110333009B CN201910643567.3A CN201910643567A CN110333009B CN 110333009 B CN110333009 B CN 110333009B CN 201910643567 A CN201910643567 A CN 201910643567A CN 110333009 B CN110333009 B CN 110333009B
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- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims description 14
- 239000002033 PVDF binder Substances 0.000 claims description 11
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 11
- 229920001577 copolymer Polymers 0.000 claims description 5
- 239000011343 solid material Substances 0.000 claims description 4
- ZGEYCCHDTIDZAE-BYPYZUCNSA-N L-glutamic acid 5-methyl ester Chemical compound COC(=O)CC[C@H](N)C(O)=O ZGEYCCHDTIDZAE-BYPYZUCNSA-N 0.000 claims description 3
- 229920000571 Nylon 11 Polymers 0.000 claims description 3
- 229920000915 polyvinyl chloride Polymers 0.000 claims description 3
- 239000004800 polyvinyl chloride Substances 0.000 claims description 3
- 229920002620 polyvinyl fluoride Polymers 0.000 claims description 3
- 239000010408 film Substances 0.000 description 57
- 239000010409 thin film Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000003698 laser cutting Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 210000002321 radial artery Anatomy 0.000 description 2
- 210000000707 wrist Anatomy 0.000 description 2
- MIZLGWKEZAPEFJ-UHFFFAOYSA-N 1,1,2-trifluoroethene Chemical group FC=C(F)F MIZLGWKEZAPEFJ-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229920009405 Polyvinylidenefluoride (PVDF) Film Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000010349 pulsation Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/302—Sensors
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Force Measurement Appropriate To Specific Purposes (AREA)
Abstract
A piezoelectric sensor includes a substrate, a plurality of active elements, a plurality of electrodes, and a piezoelectric film. The active device is disposed on the substrate. The electrode is disposed on the substrate and electrically connected to the active device. The piezoelectric film is arranged on the electrode and is provided with a first surface facing the electrode and a second surface opposite to the first surface. The first surface of the piezoelectric film has a plurality of first recesses and a plurality of first protrusions defined by the first recesses. The second surface of the piezoelectric film has a plurality of second recesses and a plurality of second protrusions defined by the second recesses. The first convex portion is disposed corresponding to the second convex portion, and the first concave portion is disposed corresponding to the second concave portion.
Description
Technical Field
The present invention relates to sensors, and more particularly to piezoelectric sensors.
Background
Currently, flexible piezoelectric materials (e.g., commercially available polyvinylidene fluoride (PVDF) films) are attached to the arrayed thin film transistor substrate to form an arrayed piezoelectric sensor, which is used in acoustic wave sensing or speakers. The arrayed thin film transistors can be used for collecting specific small-range piezoelectric information in a large area, and can be manufactured into a high-precision/resolution piezoelectric sensing element.
As the resolution requirements of piezoelectric sensors increase, the area of each electrode on the arrayed tft substrate tends to decrease, thereby reducing the single-point signal available for small-area electrodes. Thus, the thickness of the piezoelectric material needs to be increased to generate a larger signal to increase the single point signal available for a small area electrode. However, thicker piezoelectric materials and smaller and denser electrodes cause more severe cross talk (crosstalk), which in turn reduces the resolution of the piezoelectric sensor.
Disclosure of Invention
The present invention provides a piezoelectric sensor, which can improve the problem of mutual interference and has better resolution.
The piezoelectric sensor of the invention comprises a substrate, a plurality of active elements, a plurality of electrodes and a piezoelectric film. The active device is disposed on the substrate. The electrode is disposed on the substrate and electrically connected to the active device. The piezoelectric film is arranged on the electrode and is provided with a first surface facing the electrode and a second surface opposite to the first surface. The first surface of the piezoelectric film has a plurality of first recesses and a plurality of first protrusions defined by the first recesses. The second surface of the piezoelectric film has a plurality of second recesses and a plurality of second protrusions defined by the second recesses. The first convex portion is disposed corresponding to the second convex portion, and the first concave portion is disposed corresponding to the second concave portion.
In an embodiment of the invention, a solid material portion of the piezoelectric film is disposed between one of the first concave portions and a corresponding one of the second concave portions.
In an embodiment of the invention, the first convex portions are respectively overlapped with the second convex portions, and the first concave portions are respectively overlapped with the second concave portions.
In an embodiment of the invention, the first convex portions are respectively disposed on the electrodes.
In an embodiment of the invention, the electrodes are spaced apart from each other and arranged in an array on the substrate.
In an embodiment of the invention, a material of the piezoelectric film includes polyvinylidene fluoride, polyvinylidene fluoride and a copolymer thereof, polyvinyl fluoride, polyvinyl chloride, poly-gamma-methyl-L-glutamate, or nylon-11.
In an embodiment of the invention, the electrode includes a transparent electrode, a reflective electrode, or a combination thereof.
In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
Fig. 1A is a schematic top view of a piezoelectric sensor according to an embodiment of the invention.
FIG. 1B is a cross-sectional view of a piezoelectric sensor according to an embodiment of the present invention corresponding to the cross-sectional line A-A' of FIG. 1A.
Fig. 2A is a schematic cross-sectional view of a piezoelectric sensor according to an embodiment of the invention when an external force is applied.
Fig. 2B is a schematic cross-sectional view of a piezoelectric sensor according to a comparative example of the present invention when an external force is applied.
Fig. 2C is a schematic cross-sectional view of a piezoelectric sensor according to another comparative example of the present invention.
Fig. 3 is a schematic cross-sectional view of a piezoelectric sensor according to another embodiment of the invention.
Fig. 4 is a schematic cross-sectional view of a piezoelectric sensor according to another embodiment of the invention.
Wherein the reference numerals are as follows:
100. 100a, 100b, 100c, 200, 300: piezoelectric sensor
110: active element substrate
111: substrate
112: active component
1121: grid electrode
1122: gate insulating layer
1123: channel layer
1124: source electrode
1125: drain electrode
113. 113a1, 113a2, 113a3, 213a1, 213a2, 213a 3: electrode for electrochemical cell
114: dielectric layer
115: contact window
120. 120a, 220, 320: piezoelectric film
121. 121a, 221, 321: first surface
122. 122a, 222, 322: second surface
123: first concave part
124. 124a, 124b, 124c, 324: first convex part
125: second concave part
126. 126a, 126b, 126 c: second convex part
127: solid material part
130: connecting element
F: external force
P1, P2: position of
Detailed Description
Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings and the description to refer to the same or like parts.
Fig. 1A is a schematic top view of a piezoelectric sensor according to an embodiment of the invention. FIG. 1B is a cross-sectional view of a piezoelectric sensor according to an embodiment of the present invention corresponding to the cross-sectional line A-A' of FIG. 1A.
Referring to fig. 1A and 1B, a piezoelectric sensor 100 of the present embodiment includes an active device substrate 110 and a piezoelectric film 120 disposed on the active device substrate 110. The active device substrate 110 includes a substrate 111, a plurality of active devices 112, a plurality of electrodes 113, a dielectric layer 114, and a plurality of contact holes 115. The active device 112 is disposed on the substrate 111. The dielectric layer 114 is disposed on the substrate 111 and covers the active device 112. The contact 115 penetrates the dielectric layer 114. The electrode 113 is disposed on the dielectric layer 114 and electrically connected to the active device 112 through the contact hole 115. The substrate 111 may be a hard board or a soft board. For example, the hard board may be glass or a silicon wafer, and the soft board may be a polyimide or other plastic soft board, but the invention is not limited thereto.
In detail, in the present embodiment, the active device 112 includes a thin film transistor having a gate electrode 1121, a gate insulating layer 1122, a channel layer 1123, a source electrode 1124 and a drain electrode 1125. The channel layer 1122 is disposed on the gate 1121, the channel layer 1122 overlaps the gate 1121, and a gate insulating layer 1122 is interposed between the channel layer 1123 and the gate 1121. The source 1124 and the drain 1125 are disposed on the gate insulating layer 1122, and the source 1124 and the drain are respectively electrically connected to the channel layer 1120.
In the present embodiment, the channel layer 1122 is disposed on the gate 1121, that is, the active device 112 can be selectively a bottom gate thin film transistor. However, the invention is not limited thereto, and in other embodiments, the active device 112 may also include any other type of thin film transistor, such as: a top gate type thin film transistor, an etch stop (IS) thin film transistor, and the like. In addition, in the present embodiment, the material of the channel layer 1122 of the thin film transistor may be selectively amorphous silicon. However, the invention is not limited thereto, and in other embodiments, the material of the channel layer 1122 may be any other kind of semiconductor, such as: low temperature poly-silicon (LTPS), polysilicon, microcrystalline silicon, monocrystalline silicon, organic semiconductor materials, oxide semiconductor materials, or other suitable materials, or containing dopants (dopants) therein, or combinations thereof.
In the present embodiment, the electrode 113 and the active device 112 may be selectively disposed on two opposite sides of the dielectric layer 114. The electrode 113 may be electrically connected to the active device 112 through a contact 115. In addition, in the present embodiment, the plurality of electrodes 113 may be spaced apart from each other and arranged in an array on the substrate 111. That is, the plurality of electrodes 113 may form a patterned electrode layer, but the invention is not limited thereto. Although fig. 1A shows 30 electrodes 113, and the plurality of electrodes 113 are arranged on the substrate 111 in a 5 × 6 array, the number and arrangement of the electrodes 113 are not limited in the present invention. In some embodiments, the electrode 113 may include a transparent electrode, a reflective electrode, or a combination thereof.
In the present embodiment, the piezoelectric film 120 is disposed on the plurality of electrodes 113, and the piezoelectric film 120 and the dielectric layer 114 are respectively disposed on two opposite sides of the plurality of electrodes 113. For example, the material of the piezoelectric film 120 includes polyvinylidene fluoride (PVDF), polyvinylidene fluoride and its copolymer (e.g., a copolymer of vinylidene fluoride and trifluoroethylene, or a copolymer of vinylidene fluoride and tetrafluoroethylene, etc.), polyvinyl fluoride, polyvinyl chloride, or poly-gamma-methyl-L-glutamate, or nylon-11. It should be noted that the piezoelectric film 120 should be tightly connected to the electrode 113, so as to have a better piezoelectric sensing effect. In addition, in the embodiment, the connection between the piezoelectric film 120 and the electrode 113 may be, for example, by directly connecting or attaching the piezoelectric film 120 to the electrode 113, or by vacuum sealing, so that the piezoelectric film 120 and the electrode 113 are tightly connected, but the invention is not limited thereto. In other embodiments, the piezoelectric film 120 may be tightly attached to the electrode 113 by using an adhesive material having conductivity.
In detail, the piezoelectric film 120 has a first surface 121 facing the electrode 113 and an opposite second surface 122 disposed on the first surface 121. The first surface 121 of the piezoelectric film 120 has a plurality of first recesses 123 and a plurality of first protrusions 124 defined by the first recesses 123. The second surface 122 of the piezoelectric film 120 has a plurality of second recesses 125 and a plurality of second protrusions 126 defined by the second recesses 125. Wherein the first protrusion 124 is disposed corresponding to the second protrusion 126, and the first recess 123 is disposed corresponding to the second recess 125. In some embodiments, the first protrusions 124 may overlap the second protrusions 126, respectively, and the first recesses 123 may overlap the second recesses 125, respectively. In some embodiments, the vertical projection of the first recess 123 is located outside the vertical projection of the plurality of electrodes 113 and between the vertical projections of the plurality of electrodes 113, and the vertical projection of the second recess 125 is located outside the vertical projection of the plurality of electrodes 113 and between the vertical projections of the plurality of electrodes 113, but the invention is not limited thereto.
In addition, in the present embodiment, the plurality of first protrusions 124 are disposed on the plurality of electrodes 113, respectively, and the plurality of second protrusions 126 are disposed on the plurality of electrodes 113, respectively. That is, each first protrusion 124 may correspond to one electrode 113, and each second protrusion 126 may also correspond to one electrode 113, but the invention is not limited thereto. In other embodiments, each first protrusion 124 may also correspond to a plurality of electrodes 113, and each second protrusion 126 may also correspond to a plurality of electrodes 113.
In particular, in the present embodiment, the solid material portion 127 of the piezoelectric film 120 is provided between one first recess 123 and a corresponding one second recess 125. That is, although the piezoelectric film 120 has the first recess 123 and the second recess 125, the piezoelectric film 120 is not broken by the first recess 123 and/or the second recess 125, as shown in fig. 1B.
In the present embodiment, the first concave portion 123, the second concave portion 125, the first convex portion 124, and the second convex portion 126 of the piezoelectric film 120 are formed by a knife film punch press, a laser cutting, or the like. In detail, the knife film tool is designed according to the arrangement of the electrodes 113, such that the knife film tool can cut a score (i.e., the first concave portion 123) on the first surface 121 of the piezoelectric film 120 and cut a score (i.e., the second concave portion 125) on the second surface 122 of the piezoelectric film 120, but does not cut the piezoelectric film 120. The size of the first protrusion 124 defined by the first recess 123 may correspond to the size of the electrode 113, and the size of the second protrusion 126 defined by the second recess 125 may also correspond to the size of the electrode 113.
Alternatively, the first surface 121 of the piezoelectric film 120 may be cut with a score (i.e., the first concave portion 123) by laser cutting, and the second surface 122 of the piezoelectric film 120 may be cut with a score (i.e., the second concave portion 125) without cutting the piezoelectric film 120. The size of the first protrusion 124 defined by the first recess 123 may correspond to the size of the electrode 113, and the size of the second protrusion 126 defined by the second recess 125 may also correspond to the size of the electrode 113. It should be noted that, when the laser is used for cutting, the laser wavelength and power should be selected appropriately to avoid the thermal affected zone generated by the laser cutting the piezoelectric film 120 from being too large to cause the piezoelectric characteristics at the first protrusion 124 or the second protrusion 126 to fail. For example, when PVDF is used as the material of the piezoelectric film, the processing temperature for PVDF and the process temperature for connecting PVDF and the active device substrate 110 are both less than 70 ℃ to avoid the piezoelectric property of PVDF from failing.
Fig. 2A is a schematic cross-sectional view of a piezoelectric sensor according to an embodiment of the invention when an external force is applied. Fig. 2B is a schematic cross-sectional view of a piezoelectric sensor according to a comparative example of the present invention when an external force is applied. Fig. 2C is a schematic cross-sectional view of a piezoelectric sensor according to another comparative example of the present invention.
Referring to fig. 2A, in the piezoelectric sensor 100a of the present embodiment, the first surface 121a of the piezoelectric film 120a has a plurality of first protrusions 124a, 124b, and 124c, and the second surface 122A has a plurality of second protrusions 126a, 126b, and 126 c. The second protrusion 126a corresponds to the first protrusion 124a and the electrode 113a1, the second protrusion 126b corresponds to the first protrusion 124b and the electrode 113a2, and the second protrusion 126c corresponds to the first protrusion 124c and the electrode 113a 3. When an external force F is applied to the position P1 on the piezoelectric film 120a, only the second protrusion 126b corresponding to the position P1 is deformed, and the deformed second protrusion 126b generates electric charges, so that the electrode 113a2 therebelow receives the piezoelectric signal. Since the piezoelectric film 120 has the plurality of first recesses 123 and the plurality of second recesses 125, the deformation of the second protrusion 126b itself is not likely to cause the deformation of the other surrounding second protrusions 126a and 126c, thereby avoiding the mutual interference (crosstalk).
However, referring to fig. 2B, in the piezoelectric sensor 200 as a comparative example, the piezoelectric film 220 has a first surface 221 and a second surface 222 that are flat. That is, the piezoelectric film 220 does not have the plurality of first convex portions 124a, 124b, 124c and the plurality of second convex portions 126a, 126b, 126c as in fig. 2A. Thus, when an external force F is applied to the position P2 on the piezoelectric film 220, the piezoelectric film 220 corresponding to the position P2 and the periphery thereof is deformed, the deformed piezoelectric film 220 generates electric charges, and the electrodes 213a1, 213a2, and 213a3 therebelow receive piezoelectric signals. Therefore, the external force F not only receives the piezoelectric signal from the electrode 213a2 corresponding to the position P2, but also deforms the piezoelectric film 220 corresponding to the position P2, and causes the other electrodes 213a1 and 213a3 around the electrode 213a2 to receive the piezoelectric signal, thereby causing mutual interference.
Referring to fig. 2C, in the piezoelectric sensor 300 as a comparative example, the first surface 321 of the piezoelectric film 320 has a plurality of first protrusions 324, but the second surface 322 is a flat surface. That is, when only one side (the first surface 321) of the piezoelectric film 320 has a cut mark and the other side (the second surface 322) is flat, the stress imbalance between the first surface 321 and the second surface 322 may cause the piezoelectric film 320 to warp, which is not favorable for the sensing effect of the piezoelectric sensor 300.
In brief, the piezoelectric sensor 100 of the present embodiment includes a substrate 111, a plurality of active elements 112, a plurality of electrodes 113, and a piezoelectric film 120. The active device 112 is disposed on the substrate 111. The electrode 113 is disposed on the substrate 111 and electrically connected to the active device 112. The piezoelectric film 120 is disposed on the electrode 113, and has a first surface 121 facing the electrode 113 and an opposite second surface 122 disposed on the first surface 121. The first surface 121 of the piezoelectric film 120 has a plurality of first recesses 123 and a plurality of first protrusions 124 defined by the first recesses 123. The second surface 122 of the piezoelectric film 120 has a plurality of second recesses 125 and a plurality of second protrusions 126 defined by the second recesses 125. The first convex portion 124 is disposed corresponding to the second convex portion 126, and the first concave portion 123 is disposed corresponding to the second concave portion 125. With this design, the piezoelectric sensor 100 of the present embodiment can improve the problem of mutual interference and has better resolution.
The piezoelectric sensor 100 is used to detect the distribution of the force on the piezoelectric sensor 100. For example, in the present embodiment, the piezoelectric sensor 100 can be placed on the wrist to detect the pulsation of the radial artery of the wrist, so as to obtain the pulse waveform diagram of the radial artery. However, the invention is not limited thereto, and the piezoelectric sensor 100 may be applied to other applications.
Other examples will be listed below for illustration. It should be noted that the following embodiments follow the reference numerals and parts of the contents of the foregoing embodiments, wherein the same reference numerals are used to indicate the same or similar elements, and the description of the same technical contents is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.
Fig. 3 is a schematic cross-sectional view of a piezoelectric sensor according to another embodiment of the invention. Referring to fig. 1B and fig. 3, the piezoelectric sensor 100B of the present embodiment is similar to the piezoelectric sensor 100 of fig. 1B, and the main difference therebetween is: the piezoelectric sensor 100b of the present embodiment further includes a connecting element 130 disposed between the piezoelectric film 120 and the electrode 113. The connecting element 130 has conductivity and viscosity, so that the piezoelectric film 120 can be tightly connected to the electrode 113 and electrically connected to the electrode 113 through the connecting element 130. Therefore, in the present embodiment, the connection element 130 may be a conductive adhesive or other adhesive material with conductivity.
Fig. 4 is a schematic cross-sectional view of a piezoelectric sensor according to another embodiment of the invention. Referring to fig. 1B and fig. 4, the piezoelectric sensor 100c of the present embodiment is similar to the piezoelectric sensor 100 of fig. 1B, and the main difference therebetween is: in the piezoelectric sensor 100c of the present embodiment, the vertical projection of the first concave portion 123 of the piezoelectric film 120 overlaps the vertical projection of one of the electrodes 113. That is, the first protrusion 124 and the second protrusion 126 of the piezoelectric film 120 and the plurality of electrodes 113 may not need to be aligned precisely, and the piezoelectric sensor 100c may still have the effect of improving mutual interference.
In summary, in the piezoelectric sensor of the present invention, the piezoelectric film is disposed on the electrode, and has a first surface facing the electrode and a second surface opposite to the first surface. The first surface of the piezoelectric film is provided with a plurality of first concave parts and a plurality of first convex parts defined by the first concave parts. The second surface of the piezoelectric film has a plurality of second recesses and a plurality of second protrusions defined by the second recesses. The first convex portion is disposed corresponding to the second convex portion, and the first concave portion is disposed corresponding to the second concave portion. By the design, the piezoelectric sensor can solve the problem of mutual interference and has better resolution.
Although the present invention has been described with reference to the above embodiments, it should be understood that various changes and modifications can be made therein by those skilled in the art without departing from the spirit and scope of the invention.
Claims (7)
1. A piezoelectric sensor, comprising:
a substrate;
a plurality of active elements disposed on the substrate;
a plurality of electrodes disposed on the substrate and electrically connected to the active device; and
the piezoelectric film is arranged on the electrode and provided with a first surface facing the electrode and a second surface opposite to the first surface;
the first surface of the piezoelectric film has a plurality of first recesses and a plurality of first protrusions defined by the first recesses, the second surface of the piezoelectric film has a plurality of second recesses and a plurality of second protrusions defined by the second recesses, the first protrusions are disposed corresponding to the second protrusions, and the first recesses are disposed corresponding to the second recesses, wherein the first protrusions overlap the second protrusions, and the first recesses overlap the second recesses, respectively.
2. The piezoelectric sensor as claimed in claim 1, wherein one of the first recesses and a corresponding one of the second recesses have a solid material portion of the piezoelectric film therebetween.
3. The piezoelectric sensor as claimed in claim 1, wherein the orthogonal projections of the first recesses are located outside the orthogonal projections of the electrodes and each first recess is located between the orthogonal projections of two adjacent electrodes, and the orthogonal projections of the second recesses are located outside the orthogonal projections of the electrodes and each second recess is located between the orthogonal projections of two adjacent electrodes.
4. The piezoelectric sensor according to claim 1, wherein the first convex portions are respectively provided on the electrodes.
5. A piezoelectric sensor as in claim 1 wherein the electrodes are spaced apart and arrayed on the substrate.
6. The piezoelectric sensor of claim 1, wherein the material of the piezoelectric film comprises polyvinylidene fluoride, polyvinylidene fluoride and copolymers thereof, polyvinyl fluoride, polyvinyl chloride, or poly-gamma-methyl-L-glutamate, or nylon-11.
7. The piezoelectric sensor as claimed in claim 1, wherein a perpendicular projection of one of the first recesses and one of the second recesses overlaps a perpendicular projection of one of the electrodes.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW108100442A TWI689856B (en) | 2019-01-04 | 2019-01-04 | Piezoelectric sensor |
| TW108100442 | 2019-01-04 |
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| CN110333009A CN110333009A (en) | 2019-10-15 |
| CN110333009B true CN110333009B (en) | 2021-06-04 |
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| TWI741858B (en) * | 2020-10-27 | 2021-10-01 | 國立臺北科技大學 | Piezoelectric sensor and machine tool using the same |
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| TW202026828A (en) | 2020-07-16 |
| CN110333009A (en) | 2019-10-15 |
| TWI689856B (en) | 2020-04-01 |
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