CN110324540A - The forming method and electronic equipment of a kind of imaging sensor, imaging sensor - Google Patents
The forming method and electronic equipment of a kind of imaging sensor, imaging sensor Download PDFInfo
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- CN110324540A CN110324540A CN201910497541.2A CN201910497541A CN110324540A CN 110324540 A CN110324540 A CN 110324540A CN 201910497541 A CN201910497541 A CN 201910497541A CN 110324540 A CN110324540 A CN 110324540A
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
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Abstract
The embodiment of the present application discloses the forming method and electronic equipment of a kind of imaging sensor, imaging sensor, wherein imaging sensor includes the pixel array positioned at substrate；Wherein, the pixel array includes at least three pixel units, and the shape of the pixel unit is non-quadrangle；The optical signal is converted into electric signal for receiving optical signal by the pixel unit；The floating diffusion region being distributed between the pixel unit, for storing the electric signal.
Description
Technical field
The invention relates to semiconductor devices and its manufacturing field, a kind of imaging sensor, figure are related to, but are not limited to
As the forming method and electronic equipment of sensor.
Background technique
Imaging sensor is the device for converting optical signals into electric signal.In recent years, with computer and communications industry
Fast development, in such as digital camera, field camera, game machine, security video camera, medical miniature video camera and machine
In the various equipment of people etc., the application range of imaging sensor is gradually increased, and is also had for the performance of imaging sensor
Bigger demand.
Imaging sensor photosensitive effect is one of most important performance of imaging sensor.For imaging sensor,
The size of pixel unit is bigger, and photosensitive effect is better.It is at present usually to be expanded by increasing single pixel unit size parameter
The gross area of pixel array.
But current pixel unit, and expand pixel cell size parameter to improve the side of the pixel array gross area
Case cannot effectively improve the area utilization of image sensor pixel cells.
Summary of the invention
It is set in view of this, the embodiment of the present application provides a kind of imaging sensor, the forming method of imaging sensor and electronics
It is standby, it can be improved the area utilization of image sensor pixel cells.
The technical solution of the embodiment of the present application is achieved in that
In a first aspect, the embodiment of the present application provides a kind of imaging sensor, comprising:
Positioned at the pixel array of substrate；Wherein, the pixel array includes at least three pixel units, the pixel
The shape of unit is non-quadrangle；The optical signal is converted into electric signal for receiving optical signal by the pixel unit；
The floating diffusion region being distributed between the pixel unit, for storing the electric signal.
In some embodiments, the pixel unit of every preset quantity shares same floating diffusion region.
In some embodiments, the pixel array has honeycomb structure；Accordingly, the shape of the pixel unit is
Hexagon.
In some embodiments, the pixel unit includes the first colored pixels unit, the second colored pixels unit and the
Three colored pixels units；
The first colored pixels unit, the second colored pixels unit and the third colored pixels unit form one
A pixel unit set；The corresponding floating diffusion region of each pixel unit set.
In some embodiments, the pixel array has the boundary of irregular shape, and close to the first of the boundary
The structure of pixel unit in region is identical as the structure of pixel unit in the second area far from the boundary.
In some embodiments, the pixel array has the boundary of regular shape, and close to firstth area on the boundary
Pixel unit in domain is nonfunctional pixel unit.
In some embodiments, described image sensor further include: the transmission grid being connect with each pixel unit；
The transmission grid, for charge caused by the pixel unit to be transmitted to the floating diffusion region, to realize
Store the electric signal.
Second aspect, the embodiment of the present application provide a kind of forming method of imaging sensor, comprising:
Pixel array is formed on the substrate；Wherein, the pixel array includes at least three pixel units, the pixel list
The shape of member is non-quadrangle, and the optical signal is converted into electric signal for receiving optical signal by the pixel unit；
By ion implantation technology, floating diffusion region is formed between the pixel unit, to store the electric signal.
It is in some embodiments, described that pixel array is formed on the substrate, comprising:
Obtain image sensor chip to be etched；
The photomask layer with honeycomb structure is formed on the image sensor chip to be etched；
Based on the photomask layer, the image sensor chip to be etched is performed etching, being formed has honeycomb knot
The pixel array of structure.
The third aspect, the embodiment of the present application provide a kind of electronic equipment, comprising:
Electronic device body；
Imaging sensor on the electronic device body；
Wherein, described image sensor includes: the pixel array positioned at substrate；Wherein, the pixel array includes
At least three pixel units, the shape of the pixel unit are non-quadrangle；The pixel unit is used to receive optical signal, and will
The optical signal is converted into electric signal；The floating diffusion region being distributed between the pixel unit, for storing the electric signal.
The forming method and electronic equipment of imaging sensor provided by the embodiments of the present application, imaging sensor, due to pixel
The shape of pixel unit in array is therefore non-quadrangle can greatly reduce the invalid photosensitive area in pixel unit,
To improve the area utilization of image sensor pixel cells.
Detailed description of the invention
In attached drawing (it is not necessarily drawn to scale), similar appended drawing reference can describe phase in different views
As component.Similar reference numerals with different letter suffix can indicate the different examples of similar component.Attached drawing with example and
Unrestricted mode generally shows each embodiment discussed herein.
Figure 1A is the structural schematic diagram of one of the relevant technologies imaging sensor；
Figure 1B is the circuit diagram of the imaging sensor in Figure 1A；
Fig. 1 C is the structural schematic diagram of another imaging sensor in the related technology；
Fig. 1 D is the circuit diagram of the imaging sensor in Fig. 1 C；
Fig. 1 E is the schematic diagram of the microlens array of imaging sensor in the related technology；
Fig. 2 is the structural schematic diagram of imaging sensor provided by the embodiments of the present application；
Fig. 3 is the layout of the pixel array of imaging sensor provided by the embodiments of the present application；
Fig. 4 is the layout of the pixel array of imaging sensor provided by the embodiments of the present application；
Fig. 5 is the layout of the floating diffusion region of imaging sensor provided by the embodiments of the present application；
Fig. 6 is a kind of layout of pixel array of imaging sensor provided by the embodiments of the present application；
Fig. 7 is the layout of another pixel array of imaging sensor provided by the embodiments of the present application；
Fig. 8 is the structural schematic diagram of imaging sensor provided by the embodiments of the present application；
Fig. 9 is the circuit diagram of imaging sensor provided by the embodiments of the present application；
Figure 10 is the flow diagram of the forming method of imaging sensor provided by the embodiment of the present application；
Figure 11 is the structural schematic diagram of electronic equipment provided by the embodiments of the present application.
Specific embodiment
To keep the technical solution and advantage of the embodiment of the present application clearer, below in conjunction with attached in the embodiment of the present application
Figure, is described in further detail the specific technical solution of the application.Following embodiment is not used to limit for illustrating the application
Scope of the present application processed.
As shown in the application and claims, unless context clearly prompts exceptional situation, " one ", "one", " one
The words such as kind " and/or "the" not refer in particular to odd number, may also comprise plural number.In general, term " includes " only prompts to wrap with "comprising"
Include clearly identify the step of and element, and these steps and element do not constitute one it is exclusive enumerate, method or device
The step of may also including other or element.
When the embodiment of the present application is described in detail, for purposes of illustration only, indicating that the sectional view of device architecture can disobey general proportion work
Partial enlargement, and the schematic diagram is example, should not limit the range of the application protection herein.In addition, in practical system
It should include the three-dimensional space of length, width and depth in work.
Spatial relation term for example " ... under ", " ... below ", " below ", " ... under ", " ...
On ", " above " etc., herein can for convenience description and be used to describe an elements or features shown in figure
With the relationship of other elements or features.It should be understood that other than orientation shown in figure, spatial relation term intention further includes
The different orientation of device in using and operating.For example, then, being described as " in other elements if the device in attached drawing is overturn
Below " or " under it " or " under it " elements or features will be oriented in other elements or features "upper".Therefore, exemplary
Term " ... below " and " ... under " it may include upper and lower two orientations.Device can additionally be orientated and (be rotated by 90 °
Or other orientations) and spatial description language as used herein correspondingly explained.
In the context of this application, structure of the described fisrt feature in the "upper" of second feature may include first
Feature and second feature are formed as the embodiment directly contacted, also may include that other feature is formed in fisrt feature and second
Embodiment between feature, such fisrt feature and second feature may not be direct contact.
The preparation side of the planarization process method and three-dimensional storage that are provided in the embodiment of the present application in order to better understand
Method carries out analytic explanation to planarization process method in the related technology first.
Figure 1A is the structural schematic diagram of one of the relevant technologies imaging sensor, as shown in Figure 1A, described image sensing
Device 10 includes: pixel array 11 and floating diffusion region 12；Wherein, pixel array 11 includes at least four pixel units 110.
Wherein, the pixel unit 110 is quadrangle, and every four pixel units share the same floating diffusion region 12.
Figure 1B is the circuit diagram of the imaging sensor in Figure 1A, as shown in Figure 1B, one of described image sensor
Transmit grid 14 (Transfer Gate, TG), a pixel unit 110 (Photodiode, PD) and the floating diffusion region 12
(Floating Diffusion, FD) forms a metal-oxide semiconductor fieldeffect transistor (Metal-Oxide-
Semiconductor, MOS) structure.Wherein, in the corresponding metal-oxide-semiconductor of each pixel unit, TG forms the grid of the metal-oxide-semiconductor
Pole, PD forms the source electrode of the metal-oxide-semiconductor, and the drain electrode of four metal-oxide-semiconductors is collectively formed in FD.That is, sharing same floating expansion
Dissipate the drain series of four metal-oxide-semiconductors in area.
Please continue to refer to Figure 1B, described image sensor further includes reset gate 15 (Reset Gate, RG), the reset gate
It is connect respectively with supply voltage 19 (VDD) and the floating diffusion region, the reset gate is for resetting in the floating diffusion region
Image charge.That connect with the supply voltage further includes source follower 16 (Source Follower, SF), wherein institute
The source electrode connection supply voltage of source follower is stated, the grid of the source follower is connect with floating diffusion region, the source electrode
The drain electrode of follower and the source electrode of a row selector 17 (Row Selector, RS) connect, and the drain electrode of the row selector connects
Connect public output alignment 18 (Output common column line).
Fig. 1 C is the structural schematic diagram of another imaging sensor in the related technology, and as shown in Figure 1 C, described image passes
Sensor 10 includes: pixel array 11 and floating diffusion region 12；Wherein, pixel array 11 includes at least two pixel units 110.
Wherein, the pixel unit 110 is also quadrangle, and every two pixel unit shares the same floating diffusion region 12.
Fig. 1 D is the circuit diagram of the imaging sensor in Fig. 1 C, as shown in figure iD, one of described image sensor
It transmits 14, pixel units 110 of grid and the floating diffusion region 12 forms a metal-oxide-semiconductor structure.Wherein, in each pixel list
In the corresponding metal-oxide-semiconductor of member, TG forms the grid of the metal-oxide-semiconductor, and PD forms the source electrode of the metal-oxide-semiconductor, and FD is collectively formed two
The drain electrode of metal-oxide-semiconductor.That is, sharing the drain series of two metal-oxide-semiconductors of same floating diffusion region.
Please continue to refer to Fig. 1 D, described image sensor also further includes reset gate 15, and the reset gate is electric with power supply respectively
Pressure 19 is connected with the floating diffusion region, and the reset gate is used to reset the image charge in the floating diffusion region.With it is described
Supply voltage connection further includes source follower 16, wherein the source electrode of the source follower connects supply voltage, the source
The grid of pole follower is connect with floating diffusion region, and the drain electrode of the source follower connects with the source electrode of a row selector 17
It connects, the drain electrode connection of the row selector exports public alignment 18.
But either two pixel units share a floating diffusion region or four pixel units share one and float
Diffusion region is set, the shape of pixel unit in the related technology is quadrangle.Also, when imaging sensor receives optical signal,
The photosensitive area area of pixel unit determines imaging sensor photosensitive effect, and for the pixel unit of quadrangle, each pixel
The photosensitive area area of unit is actually and not equal to the gross area of pixel unit, in the ideal case, the photosensitive area of pixel unit
Area actually can only be the border circular areas at pixel unit center.It as referring to figure 1E, is imaging sensor in the related technology
The schematic diagram of microlens array, the corresponding border circular areas of each lenticule 13 is having for pixel unit corresponding to the lenticule
Effect photosensitive area can have portion it can be seen from Fig. 1 E in the entire pixel array arranged between every two pixel unit
Facet product cannot be used effectively, then this, which will result in the actually active of pixel array, is much smaller than pixel battle array using area
The gross area of column.
Currently, generalling use following two mode in order to increase the effective use area of pixel unit and realizing:
The first, increases the area of single pixel unit.
Second, increase the gross area of pixel array.
For the first above-mentioned scheme, the area by increasing single pixel unit may be implemented to expand having for pixel unit
Effect utilizes area.But since the gross area of pixel array is certain, that is to say, that the area of image sensor chip is one
Fixed, then, the scheme for increasing single pixel cell area will certainly reduce the quantity of pixel unit, in this way, image can be reduced
The pixel of sensor.
For above-mentioned second scheme, by the gross area for increasing pixel array, that is, can guarantee in pixel unit quantity
Under conditions of constant, increase the area of each pixel unit.But this scheme will definitely increase the ruler of image sensor chip
It is very little.And current technique is most of all in the pursuit high performance chip of small size, it is clear that the program can not reach good effect
Fruit.
Based on scheme in the related technology, it can be seen that increase the side of pixel unit effective use area in the related technology
In case, increasing the pixel array gross area will increase the size of image sensor chip, and reducing pixel unit quantity can be reduced
The resolution ratio of imaging, it is clear that the effect difficult to realize to make the best of both worlds of two schemes in the related technology.
Based at least one problem present in the relevant technologies, the embodiment of the present application provides a kind of imaging sensor, can
The invalid photosensitive area being significantly reduced in pixel unit, to improve the area utilization of image sensor pixel cells.
Fig. 2 is the structural schematic diagram of imaging sensor provided by the embodiments of the present application, as shown in Fig. 2, described image senses
Device 20 includes: substrate (not shown), pixel array 21 and floating diffusion region 22.
The substrate can be silicon substrate, alternatively, the material of the substrate may be germanium, SiGe, silicon carbide, arsenic
Gallium or indium arsenide, the substrate can also be the germanium substrate on the silicon substrate or insulator on insulator, or growth has
The substrate of epitaxial layer.When the substrate is silicon substrate (Silicon-On-Insulator, the SOI) on insulator, the SOI
It may include the first silicon substrate layer, liner oxidation layer and the second silicon substrate layer stacked.
The pixel array 21 is located at the substrate, and the pixel array includes at least three pixel units 211.Institute
Pixel unit 211 is stated for receiving optical signal, and the optical signal is converted into electric signal.In some embodiments of the application,
The pixel unit 211 can be light sensitive diode, realized by the light sensitive diode and turn optical signal according to usage mode
Change electric current or voltage signal into.
The shape of the pixel unit 211 is non-quadrangle form, for example, the shape of the pixel unit can be triangle
Any one non-quadrangle form such as shape, hexagon, octagon.It is hexagon that pixel unit 211 is illustratively depicted in Fig. 2
The case where, it should be understood that, the embodiment of the present application does not limit the shape of pixel unit as hexagon.
It should be noted that since the shape of the pixel unit 211 is non-quadrangle, then, in the non-quadrangle
Any two adjacent edges boundary position, can be avoided the more invalid photosensitive areas of generation, so that each pixel list
Member is increased using area, so that the area utilization of entire pixel array increases.
The floating diffusion region 22 is distributed between the pixel unit 211, and the floating diffusion region 22 is for storing institute
State electric signal.In the embodiment of the present application, the pixel unit can be with any a line of non-quadrangle or any two sides
Vertex is formed by face of the floating diffusion region, and the pixel unit can overlap with the floating diffusion region.
Imaging sensor provided by the embodiments of the present application includes: the pixel array positioned at substrate；Wherein, the pixel
Array includes at least three pixel units, and the shape of the pixel unit is non-quadrangle；The pixel unit is for receiving light
Signal, and the optical signal is converted into electric signal；The floating diffusion region being distributed between the pixel unit, for storing
State electric signal.In this way, since the shape of the pixel unit in pixel array is non-quadrangle, picture can greatly be reduced
Invalid photosensitive area in plain unit, to improve the area utilization of image sensor pixel cells.
In some embodiments, please continue to refer to Fig. 2, the pixel unit of every preset quantity shares same floating diffusion region.
Here, the preset quantity can be any one preset quantity such as two, three, four, the preset quantity
It is determined according to the true form of the pixel unit, as long as the pixel unit is enabled to arrange according to the preset quantity
When, can be realized most close arrangement, the embodiment of the present application to the preset quantity without limitation.
The pixel unit described in Fig. 2 is illustrated for being illustratively hexagon, since the pixel unit is six
Side shape, therefore, three hexagons can be realized as most closely arranging, and there is no areas in pixel array after arranging
Waste, therefore, when the pixel unit is hexagon, the preset quantity is three, that is to say, that when the pixel unit
When for hexagon, every three pixel units share same floating diffusion region.
In the embodiment of the present application, the pixel unit of every preset quantity shares same floating diffusion region, in this way, the preset quantity
Pixel unit the electric signal transmission converted to same floating diffusion region can be saved.
In some embodiments, please continue to refer to Fig. 2, the shape of the pixel unit can be hexagon.Accordingly, until
Pixel array is formed by with honeycomb structure after few three pixel units arrangement.As shown in figure 3, being the embodiment of the present application
The layout of the pixel array of the imaging sensor of offer, the pixel unit 211 in the pixel array 21 can be arranged closely
It arranges, there is no the areas that pixel unit 211 is arrived without arranging in the pixel array 21, that is to say, that the pixel array 21
The gross area by sufficiently arrange pixel unit 211.It so, it is possible to realize and sufficiently benefit carried out to the gross area of the pixel array 21
With so as to reduce the invalid photosensitive area area in pixel array 21.In addition, since the pixel unit is hexagon, example
It such as can be regular hexagon.So, the angle between every two adjacent edges of the regular hexagon is 120 degree, relative to phase
90 degree of quadrangle of angle in the technology of pass, regular hexagon is smaller in the invalid photosensitive area area of angular position, therefore, can be into one
Step improves the area utilization of pixel unit.
Fig. 4 is the layout of the pixel array of imaging sensor provided by the embodiments of the present application, as shown in figure 4, the picture
It include the first colored pixels unit 211a, the second colored pixels unit 211b and third colored pixels unit in pixel array 21
211c；Successively by the first colored pixels unit 211a, the second colored pixels unit 211b and third colored pixels unit 211c
Arrangement, forms the pixel array.
In the embodiment of the present application, the first colored pixels unit can be red pixel cell (shown in FIG as R),
The second colored pixels unit can be green pixel cell (shown in FIG as G), and the third colored pixels unit can
Blue pixel cells (shown in FIG as B) is thought, in this way, can externally be in by the various combination of Red Green Blue
Existing different color, realizes the identification to institute's multiple color image.
Certainly, in some embodiments of the application, the first colored pixels unit, the second colored pixels unit,
The third colored pixels unit may be a kind of pixel unit of any other color or the pixel of a variety of different colours
Unit, the present embodiment does not limit.
It in some embodiments, further include colour filter on the pixel unit, the colour filter is covered in the picture
On plain unit, the colour filter is used to carry out colour filter processing to the optical signal.
The colour filter includes red color filter, green color filter and blue color filter, each colour filter and a pixel
Unit is corresponding, that is to say, that the position of each colour filter is overlapped with the position of corresponding pixel unit.
The shape of the colour filter can be identical as the shape of the pixel unit, can also be different.
It further include a lenticule, the position of the position of each lenticule and corresponding colour filter on each colour filter
Set overlapping.The lenticule is used to the optical signal converging to the colour filter.
Certainly, the colour filter can be with corresponding lenticule precise overlay in position, and there may also be certain inclined
Difference, the embodiment of the present application and without limitation.
The shape of the lenticule can be identical as the shape of the pixel unit, can also be different.
Fig. 5 is the layout of the floating diffusion region of imaging sensor provided by the embodiments of the present application, as shown in figure 5, first
Colored pixels unit 211a, the second colored pixels unit 211b and third colored pixels unit 211c form a pixel unit collection
It closes；The corresponding floating diffusion region 22 of each pixel unit set.By multiple pixel unit set close-packed arrays, ultimately form
The pixel array.
In the embodiment of the present application, the pixel unit can be regular hexagon, and every three pixel units shared one floating
There is position overlapping in diffusion region between the floating diffusion region and corresponding three pixel units.
Fig. 6 is a kind of layout of pixel array of imaging sensor provided by the embodiments of the present application, as shown in fig. 6, by
It can have the side of irregular shape in the marginal position of the close arrangement that realize the pixel unit, the pixel array
Boundary, and the structure of the pixel unit in the first area 601 on the boundary, with the second area 602 far from the boundary
The structure of interior pixel unit is identical.
In the embodiment of the present application, the marginal position of pixel array region uses irregular boundary, so as to keep
Whole honeycomb dot structure.
Fig. 7 is the layout of another pixel array of imaging sensor provided by the embodiments of the present application, as shown in fig. 7,
The marginal position of the pixel array can have the boundary of regular shape, then, in the first area 601 close to the boundary
It is interior, due to the smooth rule in order to realize marginal position, then need to planarize the pixel unit in the first area
Processing, to realize the smooth of the marginal position, therefore, the pixel unit in the first area 601 on the boundary is nothing
Function pixel unit 6011.
In the embodiment of the present application, the edge of pixel array uses smooth boundary, and boundary is filled and led up with nonfunctional pixel unit
It is whole, wherein the nonfunctional pixel unit can be the pixel unit of obstructed electric signal, be also possible to simply on a silicon substrate
The structure of metallization medium layer such as only deposits the structure of silica on a silicon substrate.
Fig. 8 is the structural schematic diagram of imaging sensor provided by the embodiments of the present application, as shown in figure 8, described image senses
Device includes: substrate (not shown), pixel array 21, floating diffusion region 22, transmission grid 81.
Wherein, the substrate, pixel array 21 and floating diffusion region 22 are identical as any of the above-described embodiment, are referred to
The explanation in any embodiment is stated, this embodiment is not repeated.
The transmission grid 81, for charge caused by the pixel unit 211 in the pixel array 21 to be transmitted to institute
Floating diffusion region 22 is stated, stores the electric signal to realize.Wherein, the corresponding transmission grid 81 of each pixel unit 211.
The transmission grid 81 can have isosceles-trapezium-shaped or right-angle triangle or isosceles triangle shape.It is each
Transmission grid 81 partly overlap with corresponding pixel unit 211 and the floating diffusion region 22 respectively, in such manner, it is possible to which realizing will be via
The charge that pixel unit 211 generates is transmitted to the floating diffusion region 22.
Fig. 9 is the circuit diagram of imaging sensor provided by the embodiments of the present application, as shown in figure 9, described image senses
81, pixel units 211 of a transmission grid and the floating diffusion region 22 of device form a metal-oxide-semiconductor structure.Wherein, every
In the corresponding metal-oxide-semiconductor of one pixel unit, TG forms the grid of the metal-oxide-semiconductor, and PD forms the source electrode of the metal-oxide-semiconductor, and FD is common
Form the drain electrode of three metal-oxide-semiconductors.That is, sharing the drain series of three metal-oxide-semiconductors of same floating diffusion region.
Please continue to refer to Fig. 9, described image sensor also further includes reset gate 91, the reset gate respectively with supply voltage
92 connect with the floating diffusion region, and the reset gate is used to reset the image charge in the floating diffusion region.With the electricity
Voltage connection in source further includes source follower 93, wherein the source electrode of the source follower connects supply voltage, the source electrode
The grid of follower is connect with floating diffusion region, and the drain electrode of the source follower is connect with the source electrode of a row selector 94,
The drain electrode connection of the row selector exports public alignment 95.
Based on above-mentioned image sensor embodiment, the embodiment of the present application provides a kind of forming method of imaging sensor, figure
10 be the flow diagram of the forming method of imaging sensor provided by the embodiment of the present application, as shown in Figure 10, the method
The following steps are included:
Step S101, is formed on the substrate pixel array.
Here, the pixel array includes at least three pixel units, and the shape of the pixel unit is non-quadrangle, institute
Pixel unit is stated for receiving optical signal, and the optical signal is converted into electric signal.
In some embodiments, the pixel array can have honeycomb structure；The shape of the pixel unit is six
Side shape.
In some embodiments, the pixel array of formation can have the boundary of irregular shape, and close to described
The structure phase of pixel unit in the structure of pixel unit in the first area on boundary, with the second area far from the boundary
Together.
Alternatively, in other embodiments, the pixel array of formation can have the boundary of regular shape, and close to institute
Stating the pixel unit in the first area on boundary is nonfunctional pixel unit.
The pixel unit may include the first colored pixels unit, the second colored pixels unit and third colored pixels list
Member；The first colored pixels unit, the second colored pixels unit and the third colored pixels unit form a picture
Plain unit set
Step S102 forms floating diffusion region between the pixel unit by ion implantation technology, described in storage
Electric signal.
Here, the floating diffusion region can be located in the substrate, and the pixel unit of every preset quantity shares same floating
Set diffusion region.When the pixel unit is colored pixels unit, the corresponding floating diffusion region of each pixel unit set.
For example, when the pixel unit is positive hexagonal shape, every three pixel units share a floating expansion
Dissipate area；When the pixel unit is respectively three primary colors pixel unit, each three primary colors pixel unit set shared one floating
Diffusion region.
In other embodiments, pixel array being formed in step S101 can be realized by following steps:
Step S1011 provides image sensor chip to be etched.
Here, the image sensor chip to be etched includes substrate, and is formed by other structures on substrate,
In, the other structures are the structure other than pixel unit and floating diffusion region.
Step S1012 forms the photomask layer with honeycomb structure on the image sensor chip to be etched.
Here, by forming photomask layer on image sensor chip to be etched, the photomask layer is based on to realize
Photoengraving is carried out to the image sensor chip to be etched.
The photomask layer has honeycomb structure, the corresponding at least three hexagon photomask layer figures of the honeycomb structure
Case.
Step S1013 is based on the photomask layer, performs etching to the image sensor chip to be etched, forms tool
There is the pixel array of honeycomb structure.
Here, the hexagonal shaped pattern based on the photomask layer performs etching the image sensor chip to be etched,
It is capable of forming the channel hole with hexagon, the pixel list is formed using pixel unit formation process in the channel hole
Member, and then realize and form the pixel array.
It should be noted that the pixel unit formation process can be using any one existing formation process come complete
At, for example, by distinguishing deposition oxide, nitride in the channel hole, then surface grinding is carried out, pass through after milling
The techniques such as ion implanting form the pixel unit to form diode structure.
In other embodiments, the method can with the following steps are included:
Step S1101 forms transmission grid on the surface of the substrate, wherein the transmission grid and each pixel list
The transmission grid of member connection.
The transmission grid, for charge caused by the pixel unit to be transmitted to the floating diffusion region, to realize
Store the electric signal.
It should be noted that the description of the forming method of the present embodiment imaging sensor, implements with above-mentioned imaging sensor
The description of example is similar, has with image sensor embodiment similar beneficial effect, therefore do not repeat them here.For the application image
Undisclosed technical detail in the forming method embodiment of sensor, please refers to retouching for the above-mentioned image sensor embodiment of the application
It states and understands.
Based on above embodiments, the embodiment of the present application provides a kind of electronic equipment, and Figure 11 is provided by the embodiments of the present application
The structural schematic diagram of electronic equipment, as shown in figure 11, the electronic equipment 1101 include that electronic device body 1102 and image pass
Sensor 1103.
Described image sensor 1103 is connect with the electronic device body 1102, and described image sensor 1103 is located at
On the electronic device body 1102, described image sensor 1103 includes: the pixel array positioned at substrate；Wherein,
The pixel array includes at least three pixel units, and the shape of the pixel unit is non-quadrangle；The pixel unit is used
In reception optical signal, and the optical signal is converted into electric signal；The floating diffusion region being distributed between the pixel unit is used
In the storage electric signal.
It should be noted that provided in the electronic equipment in the embodiment of the present application, including any one above-mentioned embodiment
Imaging sensor.Electronic equipment including described image sensor can be used to shoot still image or dynamic
The camera of image.
For example, the electronic equipment is other than including described image sensor, it can also include optical system or optics
Lens, shutter unit, driving unit and signal processing unit for controlling or driving shutter unit.
The optical system can guide image light, that is, incident light to the pixel array of imaging sensor from object；Shutter
Unit can control the illumination period and shading period of imaging sensor；Driving unit can control the transmission behaviour of imaging sensor
Make the shutter operation with shutter unit；Signal processing unit can execute the signal exported from imaging sensor various types of
Signal processing；Picture signal that treated can be stored in the storage medium such as memory or be output to monitor
Equal display units.
It should be noted that the description of the present embodiment electronic equipment, forms with above-mentioned imaging sensor and imaging sensor
The description of embodiment of the method is similar, has similar beneficial to effect with imaging sensor and imaging sensor forming method embodiment
Fruit, therefore do not repeat them here.For undisclosed technical detail in the application electronic equipment embodiment, the above-mentioned figure of the application is please referred to
As sensor and imaging sensor forming method embodiment description and understand.
It should be understood by those skilled in the art that, the formation side of the imaging sensor of the embodiment of the present application, imaging sensor
Other of method and electronic equipment constitute and effect, be all for a person skilled in the art it is known, it is superfluous in order to reduce
Remaining, the embodiment of the present application does not repeat them here.
The forming method and electronic equipment of imaging sensor provided by the embodiments of the present application, imaging sensor, using non-four
The pixel unit of side shape arranges to form the pixel array with honeycomb structure, has at least the following advantages:
1) area of single pixel unit can be increased, and improve the chip area utilization rate of imaging sensor,
2) since the effective area of single pixel unit increases, the pixel array of unit area can be made
It optical signal is effectively converted into electric signal is formed by the number of charge and increase, to improve the pixel and resolution of imaging sensor
Rate.
3) pixel unit relative to quadrangle in the related technology, if the pixel unit is three primary colors,
In a pixel unit set, the scheme of quadrangle is every due to being that four pixel units share same floating diffusion region
In a pixel unit set can it is vacant go out a pixel unit can not color arrangement pixel unit.And the application is using hexagon
Pixel unit, every three pixel units form a pixel unit set, and share same floating diffusion region, in this way, can be
Three primary colors pixel unit is arranged in same pixel unit set, not will cause the vacant of colored pixels unit.Therefore, hexagon
Pixel unit of the pixel unit relative to quadrangle, the pixel unit that can have more a quarter carry out color arrangement pixel unit, such as
This, can greatly improve the pixel of formed imaging sensor.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example " " specific example "
Or the description of " some examples " etc. means particular features, structures, materials, or characteristics packet described in conjunction with this embodiment or example
In at least one embodiment or example contained in the application.In the present specification, schematic expression of the above terms are not necessarily
Refer to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be any one
It can be combined in any suitable manner in a or multiple embodiment or examples.
While there has been shown and described that embodiments herein, it will be understood by those skilled in the art that: not
A variety of change, modification, replacement and modification can be carried out to these embodiments in the case where being detached from the principle and objective of the application, this
The range of application is by claim and its equivalent limits.
Claims (10)
1. a kind of imaging sensor characterized by comprising
Positioned at the pixel array of substrate；Wherein, the pixel array includes at least three pixel units, the pixel unit
Shape be non-quadrangle；The optical signal is converted into electric signal for receiving optical signal by the pixel unit；
The floating diffusion region being distributed between the pixel unit, for storing the electric signal.
2. imaging sensor according to claim 1, which is characterized in that the pixel unit of every preset quantity shares same floating
Set diffusion region.
3. imaging sensor according to claim 1, which is characterized in that the pixel array has honeycomb structure；It is right
Ying Di, the shape of the pixel unit are hexagon.
4. imaging sensor according to claim 1, which is characterized in that the pixel unit includes the first colored pixels list
Member, the second colored pixels unit and third colored pixels unit；
The first colored pixels unit, the second colored pixels unit and the third colored pixels unit form a picture
Plain unit set；The corresponding floating diffusion region of each pixel unit set.
5. imaging sensor according to claim 1, which is characterized in that the pixel array has the side of irregular shape
Boundary, and the picture in the structure of the pixel unit in the first area on the boundary, with the second area far from the boundary
The structure of plain unit is identical.
6. imaging sensor according to claim 1, which is characterized in that the pixel array has the side of regular shape
Boundary, and the pixel unit in the first area on the boundary is nonfunctional pixel unit.
7. imaging sensor according to claim 1, which is characterized in that described image sensor further include: with each institute
State the transmission grid of pixel unit connection；
The transmission grid, for charge caused by the pixel unit to be transmitted to the floating diffusion region, to realize storage
The electric signal.
8. a kind of forming method of imaging sensor characterized by comprising
Pixel array is formed on the substrate；Wherein, the pixel array includes at least three pixel units, the pixel unit
Shape is non-quadrangle, and the optical signal is converted into electric signal for receiving optical signal by the pixel unit；
By ion implantation technology, floating diffusion region is formed between the pixel unit, to store the electric signal.
9. according to the method described in claim 8, it is characterized in that, described be formed on the substrate pixel array, comprising:
Obtain image sensor chip to be etched；
The photomask layer with honeycomb structure is formed on the image sensor chip to be etched；
Based on the photomask layer, the image sensor chip to be etched is performed etching, being formed has honeycomb structure
Pixel array.
10. a kind of electronic equipment characterized by comprising
Electronic device body；
Imaging sensor on the electronic device body；
Wherein, described image sensor includes: the pixel array positioned at substrate；Wherein, the pixel array includes at least
Three pixel units, the shape of the pixel unit are non-quadrangle；The pixel unit is used to receive optical signal, and will be described
Optical signal is converted into electric signal；The floating diffusion region being distributed between the pixel unit, for storing the electric signal.
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Application publication date: 20191011 |