CN110323242A - The forming method of imaging sensor - Google Patents
The forming method of imaging sensor Download PDFInfo
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- CN110323242A CN110323242A CN201910754077.0A CN201910754077A CN110323242A CN 110323242 A CN110323242 A CN 110323242A CN 201910754077 A CN201910754077 A CN 201910754077A CN 110323242 A CN110323242 A CN 110323242A
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- convex lens
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- spectral signal
- forming method
- imaging sensor
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- 238000000034 method Methods 0.000 title claims abstract description 43
- 238000003384 imaging method Methods 0.000 title claims abstract description 24
- 238000005530 etching Methods 0.000 claims abstract description 79
- 239000000463 material Substances 0.000 claims abstract description 73
- 230000003595 spectral effect Effects 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 239000004065 semiconductor Substances 0.000 claims abstract description 44
- 229910004014 SiF4 Inorganic materials 0.000 claims abstract description 29
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 6
- 238000010992 reflux Methods 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- 229910018540 Si C Inorganic materials 0.000 claims description 5
- 229910018557 Si O Inorganic materials 0.000 claims description 5
- 229910007991 Si-N Inorganic materials 0.000 claims description 5
- 229910008045 Si-Si Inorganic materials 0.000 claims description 5
- 229910006294 Si—N Inorganic materials 0.000 claims description 5
- 229910006411 Si—Si Inorganic materials 0.000 claims description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 5
- 229920001577 copolymer Polymers 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 2
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 12
- 238000001459 lithography Methods 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005516 deep trap Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Drying Of Semiconductors (AREA)
Abstract
A kind of forming method of imaging sensor, which comprises provide semiconductor substrate, the surface of the semiconductor substrate is formed with flatness layer；Lens arrangement is formed on the surface of the flatness layer, the lens arrangement includes multiple convex lens, and the material of the convex lens contains element silicon；Using the etching gas containing fluorine ion, the multiple convex lens is performed etching, and in etching process, continuous collecting SiF4The spectral signal intensity of material；According to the spectral signal intensity, the dwell time point for stopping etching to the multiple convex lens is determined.Whether the present invention program can complete the transfer lithography to convex lens according to spectral signal intensity accurate judgement, to achieve the effect that accurate etching.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors more particularly to a kind of forming methods of semiconductor devices.
Background technique
Imaging sensor is the core component of picture pick-up device, realizes image taking function by converting optical signals into electric signal
Energy.By taking cmos image sensor (CMOS Image Sensors, CIS) device as an example, due to its tool
There is the advantages of low-power consumption and high s/n ratio, therefore is widely applied in various fields.
For later illuminated (Back-side Illumination, BSI) CIS, in existing manufacturing process, first half
In conductor substrate and surface forms logical device, pixel device and metal interconnection structure, then using carrying wafer with it is described
The front bonding of semiconductor substrate, so the back of semiconductor substrate is carried out it is thinned, and then in the back side shape of semiconductor substrate
At the subsequent technique of CIS.
In a kind of concrete application, latticed grid can be formed at the semiconductor substrate back side of the pixel device
(Grid), a variety of filter (Color Filter) is formed in the grid between the grid, is formed on the surface of filter
Flatness layer (Under Layer) forms lens (Micro- on the surface of the flatness layer to form even curface
Lens) structure, the lens arrangement include multiple convex lens.
During forming convex lens, it is usually initially formed lens material layer, traditional approach is using reflux (Reflow) work
Skill makes its self-assembling formation convex lens pattern, however, gap between adjacent convex lens is easy to cause mutually to glue, and then influences optically focused
Effect.
In the prior art, lens arrangement can be performed etching using etching technics, the entering light face of lens can be increased
Product, however a urgent problem needed to be solved is become to the control of etching cut off (End Point).
Summary of the invention
The technical problem to be solved by the present invention is to provide a kind of forming methods of imaging sensor, can be strong according to spectral signal
Whether degree accurate judgement has completed the transfer lithography to convex lens, to achieve the effect that accurate etching.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of forming method of imaging sensor, comprising: provide
The surface of semiconductor substrate, the semiconductor substrate is formed with flatness layer；Lens arrangement, institute are formed on the surface of the flatness layer
Stating lens arrangement includes multiple convex lens, and the material of the convex lens contains element silicon；Using the etching gas containing fluorine ion
Body performs etching the multiple convex lens, and in etching process, continuous collecting SiF4The spectral signal intensity of material；Root
According to the spectral signal intensity, the dwell time point for stopping etching to the multiple convex lens is determined.
Optionally, the material of the convex lens includes siliceous part；Wherein, the siliceous part includes with the next item down or more
: Si-O key, Si-Si bond, Si-C key and Si-N key.
Optionally, the material of the convex lens is trimethyl silicane co-polymer.
Optionally, the material of the flatness layer is the compound containing C, H, O element, and does not include Si element.
Optionally, the material of the flatness layer is selected from: epoxy resin, polymethyl methacrylate.
Optionally, according to the spectral signal intensity, the dwell time point for stopping etching to the multiple convex lens is determined
It include: when the spectral signal intensity of the SiF4 material meets following one or more, determination stops the multiple convex lens
Only etch: it is strong that the spectral signal intensity of the SiF4 material drops to preset strength threshold value, the spectral signal of the SiF4 material
There is inflection point in the curve for spending the spectral signal intensity for dropping to preset percentage and the SiF4 material.
Optionally, the etching gas is selected from: CH2F2And CF4。
Optionally, the etching gas containing fluorine ion is being used, it is described before being performed etching to the multiple convex lens
The forming method of imaging sensor further include: use reflux technique, the multiple convex lens is handled.
Optionally, semiconductor substrate is provided, it includes: offer semiconductor that the surface of the semiconductor substrate, which is formed with flatness layer,
Substrate, the surface of the semiconductor substrate are formed with filter structure；Flatness layer is formed on the surface of the filter structure.
Optionally, described image sensor BSI-CIS.
Compared with prior art, the technical solution of the embodiment of the present invention has the advantages that
In embodiments of the present invention, convex lens is formed by using the material containing element silicon, and then is arranged to use and contains
The etching gas of fluorine ion performs etching the multiple convex lens, and in etching process, continuous collecting SiF4The light of material
Spectrum signal intensity, can be according to spectral signal intensity, at the time of judging to be etched to silicon oxide film, compared with the prior art
In, it is performed etching using fixed etching duration, can not be according to concrete technology situation, real-time control etching depth, accuracy is lower,
Using the scheme of the embodiment of the present invention, the transfer to convex lens whether can have been completed according to spectral signal intensity accurate judgement
Etching, to achieve the effect that accurate etching.
Further, in embodiments of the present invention, the material of the convex lens includes siliceous part, and the siliceous part is wrapped
Containing following one or more: Si-O key, Si-Si bond, Si-C key and Si-N key, and the material of the flatness layer be containing C, H,
The compound of O element, and do not include Si element, it is performed etching compared to the stack layer directly to flatness layer and convex lens, spectrum
Signal is difficult to embody difference, can be more effectively according to spectral signal intensity accurate judgement using the scheme of the embodiment of the present invention
Whether transfer lithography to convex lens has been completed, to achieve the effect that accurate etching.
Detailed description of the invention
Fig. 1 to Fig. 4 is the corresponding device profile knot of each step in a kind of forming method of imaging sensor in the prior art
Structure schematic diagram；
Fig. 5 is a kind of flow chart of the forming method of imaging sensor in the embodiment of the present invention；
Fig. 6 to Fig. 9 is that the corresponding device of each step cuts open in a kind of forming method of imaging sensor in the embodiment of the present invention
Face structural schematic diagram；
Figure 10 is a kind of schematic diagram of spectral signal ionization meter curve in the embodiment of the present invention.
Specific embodiment
In the existing manufacturing process for forming lens arrangement, it is usually initially formed lens material layer, then passes through etching shape
At the block of lense being mutually isolated, and then reflux technique is used, makes its self-assembling formation convex lens pattern, however, being easy to cause adjacent
Convex lens between there are adhesion, and then influence spotlight effect.
Fig. 1 to Fig. 4 is the corresponding device profile knot of each step in a kind of forming method of imaging sensor in the prior art
Structure schematic diagram.
Referring to Fig.1, semiconductor substrate 100 is provided, the surface of the semiconductor substrate 100 is formed with flatness layer 110.
Specifically, the semiconductor substrate 100 can be silicon substrate, and the semiconductor substrate 100 can also include being located at
The structure on the surface of the semiconductor substrate 100, such as gate structure, metal interconnection structure, filter structure etc., however it is not limited to institute
State the part within the surface of semiconductor substrate 100.
The flatness layer 110 can be used for the surface planarisation after forming filter structure.
Referring to Fig. 2, block of lense 121 is formed on the surface of the flatness layer 110.
Specifically, it can be initially formed lens material layer, then form patterned cover on the surface of the lens material layer
Film layer, and then using the patterned mask layer as exposure mask, the block of lense 121 being mutually isolated described in formation.
The block of lense 121 is handled using reflux technique referring to Fig. 3, makes its self-assembling formation convex lens 122.
As shown in figure 3, gap between adjacent convex lens is easy to cause mutually to glue, and then influence spotlight effect.
In the prior art, lens arrangement can be performed etching using etching technics, the entering light face of lens can be increased
Product.However it is easy the presence of over etching, cause to generate damage to flatness layer 110.
Referring to Fig. 4, the multiple convex lens 122 is performed etching (referring to Fig. 3), to form mutually isolated convex lens
123。
The present inventor has found after study, in the prior art, the material of the flatness layer 110 and the convex lens
Material is the compound containing C, H, O element, and the ingredient of etching gas is also with uniformity.Therefore convex lens 122 is carried out
Etching, will necessarily damage flatness layer 110, cause to have an impact the flat performance of flatness layer.
The inventor of invention is after study it has furthermore been found that conventionally, as flatness layer 110 and the convex lens
Material it is similar, and do not have element (such as Si element) easy to identify, cause even if the method using spectral signal intensity detection
Find the dwell time point (End-point) of etching, it is also difficult to find element appropriate and be detected.
In embodiments of the present invention, by forming silicon oxide film between the flatness layer and lens material layer, in turn
It is arranged using the etching gas containing fluorine ion, the multiple convex lens is performed etching, and in etching process, continuous collecting
SiF4The spectral signal intensity of material at the time of judging to be etched to silicon oxide film, can be compared according to spectral signal intensity
In in the prior art, performed etching using fixed etching duration, can not according to concrete technology situation, real-time control etching depth,
Whether accuracy is lower, using the scheme of the embodiment of the present invention, can have been completed according to spectral signal intensity accurate judgement pair
The transfer lithography of convex lens, to achieve the effect that accurate etching.
It is understandable to enable above-mentioned purpose of the invention, feature and beneficial effect to become apparent, with reference to the accompanying drawing to this
The specific embodiment of invention is described in detail.
Referring to Fig. 5, Fig. 5 is a kind of flow chart of the forming method of imaging sensor in the embodiment of the present invention.Described image
The forming method of sensor may include step S21 to step S24:
Step S21: semiconductor substrate is provided, the surface of the semiconductor substrate is formed with flatness layer；
Step S22: forming lens arrangement on the surface of the flatness layer, and the lens arrangement includes multiple convex lens,
The material of the convex lens contains element silicon；
Step S23: the etching gas containing fluorine ion is used, the multiple convex lens is performed etching, and etched
Cheng Zhong, continuous collecting SiF4The spectral signal intensity of material；
Step S24: according to the spectral signal intensity, the dwell time for stopping etching to the multiple convex lens is determined
Point.
Above-mentioned each step is illustrated below with reference to Fig. 6 to Fig. 9.
Fig. 6 to Fig. 9 is that the corresponding device of each step cuts open in a kind of forming method of imaging sensor in the embodiment of the present invention
Face structural schematic diagram；
Referring to Fig. 6, semiconductor substrate 200 is provided, forms flatness layer 210 on the surface of the semiconductor substrate 200.
Wherein, the semiconductor substrate 200 can be with for the material of silicon substrate or the semiconductor substrate 200
Including germanium, SiGe, silicon carbide, GaAs or gallium indium, the semiconductor substrate 200 can also be the silicon substrate on insulator
Or the germanium substrate on insulator, or grow the substrate for having epitaxial layer (Epitaxy layer, Epi layer).It is preferred that
Ground, the semiconductor substrate 200 are the semiconductor substrate being lightly doped, and are served as a contrast in doping type and subsequent technique in the semiconductor
The photodiode formed in bottom 200 is opposite.It specifically, can be real by carrying out ion implanting to the semiconductor substrate 200
Existing deep trap doping (Deep Well Implant).
It should be pointed out that the semiconductor substrate 200 can also include positioned at the surface of the semiconductor substrate 200
Structure, such as gate structure, metal interconnection structure, filter structure etc., however it is not limited within the surface of the semiconductor substrate 200
Part.
Specifically, semiconductor substrate is provided, the step of surface of the semiconductor substrate 200 is formed with flatness layer 210 can
To include: to provide semiconductor substrate 200, the surface of the semiconductor substrate 200 is formed with filter structure；In the filter structure
Surface formed flatness layer 210.
Wherein, the material of the flatness layer 210 can be the compound containing C, H, O element, and not include Si element
Material.
As a unrestricted example, the material of the flatness layer 210 can be selected from: epoxy resin, poly- methyl-prop
E pioic acid methyl ester.
It should be pointed out that in embodiments of the present invention, the material of the flatness layer 210 can also be other materials appropriate
Material.If including Si element in the material of the flatness layer 210, siliceous convex lens material can be used, and is directly adopted
With spectral signal intensity to SiF4Material is detected.
Referring to Fig. 7, block of lense 221 is formed on the surface of the flatness layer 210.
Specifically, it can be initially formed lens material layer, then form patterned cover on the surface of the lens material layer
Film layer, and then using the patterned mask layer as exposure mask, the block of lense 221 being mutually isolated described in formation.
Specifically, the material of the block of lense 221 may include siliceous part；Wherein, the siliceous part includes following
It is one or more: Si-O key, Si-Si bond, Si-C key and Si-N key.
In embodiments of the present invention, the material of the convex lens includes siliceous part, and the siliceous part includes following
It is one or more: Si-O key, Si-Si bond, Si-C key and Si-N key, and the material of the flatness layer is to contain C, H, O element
Compound, and do not include Si element, performed etching compared to the stack layer directly to flatness layer and convex lens, spectral signal is difficult
To embody difference, using the scheme of the embodiment of the present invention, can more effectively according to spectral signal intensity accurate judgement whether
Through completing the transfer lithography to convex lens, to achieve the effect that accurate etching.
Further, the material of the block of lense 221 can be trimethyl silicane co-polymer.
Specifically, by using trimethyl silicane co-polymer, it can use the element silicon in the material, in subsequent technique
Middle formation SiF4, to realize the scheme for judging dwell time point according to spectral signal intensity.
It should be pointed out that the material of the block of lense 211 can also include photosensitive part.
In embodiments of the present invention, further include photosensitive part by the material that convex lens is arranged, it can be better achieved
Light transmission function, to meet the device requirement of imaging sensor.
The block of lense 221 is handled using reflux technique referring to Fig. 8, makes its self-assembling formation convex lens 222.
As shown, influencing spotlight effect when serious, and easily cause light there are adhesion between adjacent convex lens 222
Learn crosstalk.
The multiple convex lens 222 is performed etching using the etching gas containing fluorine ion referring to Fig. 9, and is being etched
In the process, continuous collecting SiF4The spectral signal intensity of material, and according to the spectral signal intensity, determine to the multiple
Convex lens stops the dwell time point of etching, and when stopping etching, forms mutually isolated convex lens 223.
It should be pointed out that including fluorine in the etching gas due to including siliceous part in the material of convex lens 222
Ion can make in etching process, and reaction generates SiF4Compound, to meet the needs of spectral signal intensity detection.
Further, the etching gas can be selected from: CH2F2And CF4。
It should be pointed out that in embodiments of the present invention, other etching gas appropriate containing fluorine ion can also be used
Body.
Further, according to the spectral signal intensity, when determining the stopping to the multiple convex lens 222 stopping etching
Between put the step of may include: as the SiF4When the spectral signal intensity of material meets following one or more, determine to institute
It states multiple convex lens 222 and stops etching: the SiF4The spectral signal intensity of material drops to preset strength threshold value, the SiF4
The spectral signal intensity of material drops to preset percentage and the SiF4The curve of the spectral signal intensity of material turns
Point.
In specific implementation, the spectral signal intensity can be acquired using spectrum detection instrument, it is also an option that having certainly
The etching machine bench of measure spectrum signal strength function is realized to the SiF4During material performs etching, to the SiF4
The spectral signal intensity of material measures.
0, Figure 10 is a kind of schematic diagram of spectral signal ionization meter curve in the embodiment of the present invention referring to Fig.1.
Specifically, the curve shows the SiF4The spectral signal intensity curve of material.
Specifically, before etching is to terminal, what is be etched is convex lens；After etching to terminal, it is etched simultaneously
Be flat layer region between convex lens.Since the material being etched is different, the corresponding spectral signal of different materials can occur
Variation, therefore detected and calculated with intensity of the optics detection instrument to these spectral signals, it can know that etching process is
It is no to reach terminal.
It in specific implementation, can be according to the SiF4The spectral signal intensity of material is begun to decline, it can be determined that described
Adhesion region between convex lens has been etched to a certain degree, or even has begun the flatness layer exposed between convex lens
Surface.And then it can be according to the SiF4The spectral signal intensity of material drops to preset strength threshold value, judges the convex lens
Between adhesion region be etched to a certain degree.
It in specific implementation, can also be according to the SiF4The spectral signal intensity of material drops to preset percentage, sentences
Break the adhesion region between the convex lens be etched to a certain degree, for example, by using control wafer (Monitor Wafer) into
Row etches and records the case where not sticking together completely, and the spectral signal intensity being arranged at that time is absolutely.
In specific implementation, the SiF can also be used4There is inflection point in the curve of the spectral signal intensity of material, judgement
There has been the sign for being etched and penetrating in adhesion region between the convex lens, so that it is determined that the adhesion region between convex lens is
It is etched to deeper degree.
In embodiments of the present invention, convex lens is formed by using the material containing element silicon, and then is arranged to use and contains
The etching gas of fluorine ion performs etching the multiple convex lens, and in etching process, continuous collecting SiF4The light of material
Spectrum signal intensity, can be according to spectral signal intensity, at the time of judging to be etched to silicon oxide film, compared with the prior art
In, it is performed etching using fixed etching duration, can not be according to concrete technology situation, real-time control etching depth, accuracy is lower,
Using the scheme of the embodiment of the present invention, the transfer to convex lens whether can have been completed according to spectral signal intensity accurate judgement
Etching, to achieve the effect that accurate etching.
Further, described image sensor can be BSI-CIS.
By using the scheme of the embodiment of the present invention, can with real-time control etching depth so that flatness layer obtain compared with
Good flatness helps to obtain preferable spotlight effect when light is injected from chip back.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (10)
1. a kind of forming method of imaging sensor characterized by comprising
Semiconductor substrate is provided, the surface of the semiconductor substrate is formed with flatness layer；
Lens arrangement is formed on the surface of the flatness layer, the lens arrangement includes multiple convex lens, the convex lens
Material contains element silicon；
Using the etching gas containing fluorine ion, the multiple convex lens is performed etching, and in etching process, continuous collecting
SiF4The spectral signal intensity of material；
According to the spectral signal intensity, the dwell time point for stopping etching to the multiple convex lens is determined.
2. the forming method of imaging sensor according to claim 1, which is characterized in that
The material of the convex lens includes siliceous part；
Wherein, the siliceous part includes following one or more: Si-O key, Si-Si bond, Si-C key and Si-N key.
3. the forming method of imaging sensor according to claim 2, which is characterized in that
The material of the convex lens is trimethyl silicane co-polymer.
4. the forming method of imaging sensor according to claim 1, which is characterized in that
The material of the flatness layer is the compound containing C, H, O element, and does not include Si element.
5. the forming method of imaging sensor according to claim 4, which is characterized in that
The material of the flatness layer is selected from: epoxy resin, polymethyl methacrylate.
6. the forming method of imaging sensor according to claim 1, which is characterized in that strong according to the spectral signal
Degree determines that the dwell time point for stopping etching to the multiple convex lens includes:
When the spectral signal intensity of the SiF4 material meets following one or more, determines and the multiple convex lens is stopped
Etching: the spectral signal intensity of the SiF4 material drops to the spectral signal intensity of preset strength threshold value, the SiF4 material
There is inflection point in the curve for dropping to the spectral signal intensity of preset percentage and the SiF4 material.
7. the forming method of imaging sensor according to claim 1, which is characterized in that
The etching gas is selected from: CH2F2And CF4。
8. the forming method of imaging sensor according to claim 1, which is characterized in that using the quarter containing fluorine ion
Gas is lost, before performing etching to the multiple convex lens, further includes:
Using reflux technique, the multiple convex lens is handled.
9. the forming method of imaging sensor according to claim 1, which is characterized in that semiconductor substrate is provided, it is described
The surface of semiconductor substrate is formed with flatness layer
Semiconductor substrate is provided, the surface of the semiconductor substrate is formed with filter structure；
Flatness layer is formed on the surface of the filter structure.
10. the forming method of imaging sensor according to claim 1, which is characterized in that
Described image sensor is BSI-CIS.
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| CN1482578A (en) * | 2002-06-21 | 2004-03-17 | �����ɷ� | Graphic identification method and system for process endpoint curve and computer readable media having instructions executing the same method |
| CN101118379A (en) * | 2006-07-31 | 2008-02-06 | 东部高科股份有限公司 | Microlenses of cmos image sensor and method for fabricating the same |
| CN204558428U (en) * | 2015-03-19 | 2015-08-12 | 信利（惠州）智能显示有限公司 | Wet etching device |
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| CN1482578A (en) * | 2002-06-21 | 2004-03-17 | �����ɷ� | Graphic identification method and system for process endpoint curve and computer readable media having instructions executing the same method |
| CN101118379A (en) * | 2006-07-31 | 2008-02-06 | 东部高科股份有限公司 | Microlenses of cmos image sensor and method for fabricating the same |
| CN204558428U (en) * | 2015-03-19 | 2015-08-12 | 信利（惠州）智能显示有限公司 | Wet etching device |
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