CN110323211A - Luminous chip package structure and packaging method - Google Patents
Luminous chip package structure and packaging method Download PDFInfo
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- CN110323211A CN110323211A CN201810264816.3A CN201810264816A CN110323211A CN 110323211 A CN110323211 A CN 110323211A CN 201810264816 A CN201810264816 A CN 201810264816A CN 110323211 A CN110323211 A CN 110323211A
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- luminous
- electrode
- package structure
- chip package
- connection pad
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Abstract
The present invention discloses a kind of luminous chip package structure and packaging method.Luminous chip package structure includes a luminescence chip, an adhesive body and a redistribution line construction；Luminescence chip has a luminous zone, a first electrode and a second electrode；Adhesive body at least coats the side wall surface of luminescence chip；Redistribution line construction is set to adhesive body, and the first internal connection-wire structure for being electrically connected at first electrode including one and one be electrically connected at second electrode the second internal connection-wire structure；First internal connection-wire structure and the second internal connection-wire structure are respectively provided with one first connection pad and one second connection pad, and the first connection pad and the second connection pad are positioned at the same side of luminous chip package structure.Luminous chip package structure provided by the present invention and packaging method solve the problems, such as that volume can not be reduced in conventional packaging techniques or cost is excessively high.
Description
Technical field
The present invention relates to a kind of chip-packaging structure and packaging method, more particularly to a kind of luminous chip package structure and
Packaging method.
Background technique
It is existing luminous element packing structure generally includes substrate, is disposed on the substrate semiconductor light emitting crystal grain, a plurality of
Bonding wire and molding material, wherein semiconductor light emitting crystal grain is electrically connected to substrate by a plurality of bonding wire.Molding material can coat
Semiconductor light emitting crystal grain, a plurality of bonding wire and the surface for covering substrate, it is brilliant to avoid the aqueous vapor contact semiconductor light emitting in air
Grain and bonding wire.Semiconductor light emitting crystal grain above-mentioned is, for example, light emitting diode (Light-emitting diode, LED), hangs down
Face -emitting laser (Vertical Cavity Surface Emitting Laser, VCSEL), edge-emitting laser (Edge directly
Emitting Laser) or Organic Light Emitting Diode (Organic Light Emitting Diode, OLED).However, above-mentioned
Luminous element packing structure usually there is substrate and bonding wire, therefore volume is difficult to further be contracted by, and is difficult to meet micro-
The trend of smallization.
Currently used for encapsulating chip size packages (Chip Scale Package, CSP) technology of other semiconductor grains,
The size of finished product after can making encapsulation is completely equivalent or less times greater than chip size, thus the substantially volume after reduction encapsulation.
Therefore, industry has been attempted for chip size packages technology to be applied to encapsulation semiconductor light emitting crystal grain at present, to further reduce envelope
Assembling structure.That is, in the wafer manufacturing stage, that is, before wafer is not cut into multiple semiconductor light emitting crystal grain,
Interconnection wiring is made on wafer, to form two electrode pads in the bottom of each semiconductor luminescent grain, and forms crystal covering type half
Conductor luminescent grain.Aforementioned flip-chip type semiconductor luminescent grain can be arranged on another circuit board by surface laminating type.So
And the cost for forming crystal-coated light-emitting chip in the wafer manufacturing stage is excessively high.
Summary of the invention
Technical problem to be solved by the present invention lies in provide a kind of luminescence chip encapsulation knot in view of the deficiencies of the prior art
Structure and packaging method solve the problems, such as that volume can not be reduced in conventional packaging techniques or cost are excessively high.
In order to solve the above technical problems, a wherein technical solution of the present invention is to provide a kind of luminous core
Chip package comprising: a luminescence chip, an adhesive body and a redistribution line construction.Luminescence chip has one to shine
Area, a first electrode and a second electrode.Adhesive body at least coats the side wall surface of luminescence chip.Redistribution line construction is set
It is placed in adhesive body, and the first internal connection-wire structure for being electrically connected at first electrode including one and one is electrically connected at second electrode
The second internal connection-wire structure.First internal connection-wire structure and the second internal connection-wire structure are respectively provided with one first connection pad and one second connect
Pad, and the first connection pad and the second connection pad are positioned at the same side of luminous chip package structure.
Further, luminous chip package structure have a light emission side and a bottom side opposite with light emission side, first
Connection pad and the second connection pad are all located at bottom side.
Further, first electrode is located at light emission side, and the first internal connection-wire structure still further comprises one and is located at light emission side
The first conductive layer and one run through adhesive body the first conductive column, and first electrode by the first conductive layer with first conduction
Column, to be electrically connected the first connection pad for being located at bottom side.
Further, second electrode is located at bottom side, and the second connection pad covers second electrode.
Further, the area of the second connection pad is greater than or equal to the area of second electrode, second electrode is completely covered.
Further, second electrode is located at light emission side, and the second internal connection-wire structure still further comprises one and is located at light emission side
The second conductive layer and one run through adhesive body the second conductive column, and second electrode is conductive by the second conductive layer and second
Column, to be electrically connected the second connection pad for being located at bottom side.
Further, redistribution line construction still further comprises a conductive radiating layer for being located at luminescence chip bottom,
Conductive radiating layer and the first connection pad are separated from each other setting.
Further, luminous chip package structure may further comprise: an intracorporal passive component of embedment sealing,
In, redistribution line construction still further comprises one to make passive component be electrically connected the third interconnection wiring knot of luminescence chip
Structure.
Further, the luminous zone of luminescence chip is exposed to outside adhesive body and is not covered by adhesive body.
Further, adhesive body includes one around portion and a covering part, and the side wall surface of luminescence chip is coated around portion,
The luminous zone of covering part covering luminescence chip.
Further, optical texture includes multipoint condensing structure, a single-point concentration structure, an equal photo structure, a blast
It is at least one of among structure and an optical grating construction.
Further, luminous chip package structure may further comprise: other multiple luminescence chips, multiple luminescence chips
It is electrically connected to each other by redistribution line construction.
Further, luminous chip package structure has a light emission side and a bottom side opposite with light emission side, wherein
First connection pad and the second connection pad are all located at bottom side.
Further, luminous chip package structure has a light emission side and a bottom side opposite with light emission side, wherein
First connection pad and the second connection pad are all located at light emission side, and second electrode is located at bottom side, and the second internal connection-wire structure still further comprises
One runs through the second conductive column of adhesive body positioned at the second conductive layer of light emission side and at least one, and second electrode is led by second
Electric layer and the second conductive column are electrically connected the second connection pad for being located at light emission side.
In order to solve the above technical problems, an other technical solution of the present invention is to provide a kind of luminous core
The packaging method of piece comprising: a setting at least luminescence chip is on a temporary support plate, wherein temporary support plate includes one
Adhesive, and luminescence chip is combined by adhesive and temporary support plate, and luminescence chip has a luminous zone, one first
Electrode and a second electrode；An adhesive body is formed, adhesive body at least coats the side wall surface of luminescence chip and covers peelable
Surface from glue；Temporary support plate is removed, to form an initial encapsulating structure；And a redistribution is formed in initial encapsulating structure
Line construction, redistribution line construction include that first internal connection-wire structure for being electrically connected at first electrode and one are electrically connected
In the second internal connection-wire structure of second electrode, the first internal connection-wire structure and the second internal connection-wire structure be respectively provided with one first connection pad with
And one second connection pad, and the first connection pad and the second connection pad are located at the same side of luminous chip package structure.
Further, the packaging method of luminescence chip may further comprise: and execute a cutting step to initial encapsulating structure
Suddenly, to form luminous chip package structure.
Further, in a setting at least luminescence chip in the step on temporary support plate, luminescence chip is to shine
Area is set on temporary support plate in face of the mode of adhesive.
Further, initial encapsulating structure has a light emission side and a bottom side opposite with light emission side, first electrode
Positioned at light emission side, second electrode is located at bottom side, and the step of forming redistribution line construction may further comprise: in adhesive body
Form at least one through-hole for running through adhesive body；A conductive material is formed in an at least through-hole, it is conductive to form at least one first
Column；First conductive layer being electrically connected between first electrode and the first conductive column is formed in light emission side；And in bottom side shape
At the first connection pad for being electrically connected the first conductive column and it is electrically connected the second connection pad of second electrode.
Further, in a setting at least luminescence chip in the step on temporary support plate, luminescence chip is to shine
The mode of area back to adhesive is set on temporary support plate.
Further, adhesive body includes a covering part that luminous zone is covered around portion and one, and around portion, cladding shines
The side wall surface of chip, and a light output surface of covering part has an optical texture.
Be further understood that feature and technology contents of the invention to be enabled, please refer to below in connection with it is of the invention specifically
Bright and attached drawing, however provided attached drawing is only for reference and description, and is not intended to limit the present invention.
Detailed description of the invention
Fig. 1 is the flow chart of the packaging method of the luminescence chip of one embodiment of the invention.
Fig. 2A is partial cutaway schematic of the luminous chip package structure of one embodiment of the invention in manufacturing step.
Fig. 2 B is partial cutaway schematic of the luminous chip package structure of one embodiment of the invention in manufacturing step.
Fig. 2 C is partial cutaway schematic of the luminous chip package structure of one embodiment of the invention in manufacturing step.
Fig. 2 D is partial cutaway schematic of the luminous chip package structure of one embodiment of the invention in manufacturing step.
Fig. 2 E is partial cutaway schematic of the luminous chip package structure of one embodiment of the invention in manufacturing step.
Fig. 3 A is the partial cutaway schematic of the luminous chip package structure of one embodiment of the invention.
Fig. 3 B is the schematic top plan view of the luminous chip package structure of Fig. 3 A.
Fig. 4 is the diagrammatic cross-section of the luminous chip package structure of another embodiment of the present invention.
Fig. 5 is the diagrammatic cross-section of the luminous chip package structure of yet another embodiment of the invention.
Fig. 6 is the diagrammatic cross-section of the luminous chip package structure of further embodiment of this invention.
Fig. 7 is the schematic top plan view of the luminous chip package structure of another embodiment of the present invention.
Fig. 8 is the schematic top plan view of the luminous chip package structure of another embodiment of the present invention.
Fig. 9 is the schematic top plan view of the luminous chip package structure of another embodiment of the present invention.
Figure 10 A is partial cutaway schematic of the luminous chip package structure of one embodiment of the invention in manufacturing step.
Figure 10 B is partial cutaway schematic of the luminous chip package structure of one embodiment of the invention in manufacturing step.
Figure 10 C is partial cutaway schematic of the luminous chip package structure of one embodiment of the invention in manufacturing step.
Figure 10 D is partial cutaway schematic of the luminous chip package structure of one embodiment of the invention in manufacturing step.
Figure 10 E is partial cutaway schematic of the luminous chip package structure of one embodiment of the invention in manufacturing step.
Figure 11 is the diagrammatic cross-section of the luminous chip package structure of another embodiment of the present invention.
Figure 12 is the diagrammatic cross-section of the luminous chip package structure of another embodiment of the present invention.
Figure 13 is the diagrammatic cross-section of the luminous chip package structure of another embodiment of the present invention.
Figure 14 is the diagrammatic cross-section of the luminous chip package structure of another embodiment of the present invention.
Figure 15 is the diagrammatic cross-section of the luminous chip package structure of another embodiment of the present invention.
Figure 16 is the diagrammatic cross-section of the luminous chip package structure of another embodiment of the present invention.
Specific embodiment
It is to illustrate presently disclosed related " luminous chip package structure and its system by specific specific example below
Make method " embodiment, those skilled in the art can by content disclosed in this specification understand advantages of the present invention and effect
Fruit.The present invention can be implemented or be applied by other different specific embodiments, and the various details in this specification can also base
In different viewpoints and application, carry out various modifications and change in the case where not departing from design of the invention.In addition, attached drawing of the invention is only
To be simple schematically illustrate, not according to the description of actual size, state in advance.This will be explained in further detail in the following embodiments and the accompanying drawings
The relevant technologies content of invention, but the protection scope that disclosure of that is not intended to limit the invention.
It should be understood that although various assemblies or signal may be described using term first, second, third, etc. herein,
But these components or signal should not be limited by these terms.These terms are mainly to distinguish a component and another group
Part or a signal and another signal.In addition, term "or" used herein, should may include correlation depending on actual conditions
Connection lists any of project or multiple combinations.
The present invention provides luminescence chip packaging method and luminous chip package structure, wherein packaging method is applicable to seal
Harness has the luminescence chip of transverse structure (lateral structure), or has vertical structure (vertical
Structure luminescence chip).Luminescence chip such as, but not limited to, light emitting diode (Light-emitting diode,
LED) chip, Organic Light Emitting Diode (OLED) chip or laser diode (Laser diode, LD) chip etc., wherein swashing
Luminous diode chip can be vertical cavity surface emitting laser (VCSEL) (VCSEL) or edge-emitting laser (EELD).Fig. 1 is please referred to,
Fig. 1 is the flow chart of the packaging method of the luminescence chip of one embodiment of the invention.
As shown in Figure 1, in the step s 100, an at least luminescence chip is arranged on a temporary support plate, wherein temporary
Support plate includes an adhesive, and luminescence chip is combined by adhesive and temporary support plate.Then, in step s 200,
An adhesive body is formed, and adhesive body at least coats the side wall surface of luminescence chip and covers the surface of adhesive.Then, exist
In step S300, temporary support plate is removed, to form an initial encapsulating structure.Then, in step S400, in initial encapsulation knot
It is configured to a redistribution line construction.Later, in step S500, a cutting step is executed to initial encapsulating structure, to be formed
The luminous chip package structure of the embodiment of the present invention.
Furthermore, A to Fig. 2 E referring to figure 2., shows the luminous chip package structure of the embodiment of the present invention respectively
Partial cutaway schematic in each step.As shown in Figure 2 A, an at least luminescence chip 10 is arranged on a temporary support plate 2
On.Luminescence chip 10 can be with transverse structure (lateral structure) or have vertical structure (vertical
Structure light emitting diode (Light-emitting diode, LED) chip, Organic Light Emitting Diode (OLED) core)
Piece, vertical cavity surface emitting laser (VCSEL) (VCSEL), edge-emitting laser (EELD) etc..It in the present embodiment, is vertical to have
It is illustrated for the laser diode chip of structure, wherein the laser diode chip with vertical structure is vertically to be total to chamber
Plane radial type laser (Vertical-cavity surface emitting laser, VCSEL).
Therefore, the luminescence chip 10 of the present embodiment will include a substrate 100, one first mirror layer 101, active layers (figure
Do not show), one second mirror layer 102, first electrode 103 and second electrode 104.First mirror layer 101, active layers and
Second mirror layer 102 is all located on substrate 100, and active layers be located at the first mirror layer 101 and the second mirror layer 102 it
Between.
First mirror layer 101 and the second mirror layer 102 can be by two kinds of films with different refraction coefficients
The distributed bragg reflector mirror (Distributed Bragg Reflector, DBR) for being alternately stacked and being formed, so as to have
The light beam of predetermined wavelength projects.In one embodiment, the first mirror layer 101 is N-shaped distributed bragg reflector mirror, and second
Mirror layer 102 is p-type distributed bragg reflector mirror.
Active layers generate just between the first mirror layer 101 and the second mirror layer 102 to be excited by electric energy
Beginning light beam.Incipient beam of light caused by active layers passes through anti-back and forth between the first mirror layer 101 and the second mirror layer 102
It penetrates and resonates and gain is amplified, be finally emitted by the second mirror layer.Although in addition it is noted that being painted the second reflection in Fig. 2A
The side of mirror layer 102 inside contracts relative to the first mirror layer 101 and forms an island platform part, but is not intended to limit this hair
It is bright.In other embodiments, the surface of the first mirror layer 101 can also be completely covered in the second mirror layer 102.
In the present embodiment, first electrode 103 and second electrode 104 can be single metal layer, alloy-layer either by
The lamination that different metal material is constituted.First electrode 103 is to be located on the second mirror layer 102, and second electrode 104 is position
In on the bottom surface of substrate 100.
Specifically, the meeting of first electrode 103 second mirror layer 102 in electrical contact, and second electrode 104 can be in electrical contact
Substrate 100 or the first mirror layer 101.When applying a voltage to first electrode 103 and second electrode 104, in first electrode 103
It can produce the current path by active layers between second electrode 104.In addition, there is first electrode 103 definition to set out
The aperture of light area A1, and first electrode 103 can be isolated by an insulating protective layer 106 and the first mirror layer 101.
Accordingly, the first electrode 103 of the luminescence chip 10 of the present embodiment and luminous zone A1 can be located at the phase of luminescence chip 10
It is ipsilateral, and second electrode 104 can be located at side of the luminescence chip 10 in contrast to luminous zone A1.That is, first electrode 103 with
Second electrode 104 can be located at the opposite side of luminescence chip 10.However, in other embodiments, the first of luminescence chip 10
Electrode 103, second electrode 104 and luminous zone A1 can also be all located at the same side of substrate 100.
In addition, in the present embodiment, temporary support plate 2 includes a support plate 20 and one is arranged in glue in support plate 20
Layer 21.It is worth noting that, in setting luminescence chip 10 when on temporary support plate 2, luminescence chip 10 can quilt in the present embodiment
It is inverted.That is, luminescence chip 10 can be set on temporary support plate 2 with luminous zone A1 in face of glue-line 21.
In the present embodiment, support plate 20 can be metal substrate, ceramic substrate, composite plate either other can carry it is luminous
The substrate of chip 10, the present invention are not intended to limit.Glue-line 21 is a soft material, and has a predetermined thickness, to cooperate luminous core
The surface shape of piece 10 and deform, in order to avoid damage luminescence chip 10 luminous zone A1.In other words, when luminescence chip 10 combines temporarily
When property support plate 2, a part of luminescence chip 10 can be fallen into glue-line 21.
In addition, the binding force between glue-line 21 and support plate 20 is greater than the binding force between glue-line 21 and luminescence chip 10,
To avoid it is subsequent temporary substrate 2 and luminescence chip 10 are separated when, damage luminescence chip 10.In one embodiment, glue-line
21 be a releasing layer or a peelable glue-line.
It should be noted that although Fig. 2A is only painted a luminescence chip 10 and is arranged on temporary support plate 2, in practical system
When making, multiple luminescence chips 10 can be arranged on temporary support plate 2 simultaneously, to be packaged jointly.
Then, as shown in Figure 2 B, the adhesive body at least coating 21 surface of side wall surface and glue-line of luminescence chip 10 is formed
11'.The material of adhesive body 11 ' be mainly epoxy resin (Epoxy), epoxy moldable resin (Epoxy Molding Compound,
EMC), silica gel (Silicone) either other materials suitable for encapsulation, the present invention is not intended to limit.As shown in Figure 2 B, it seals
Colloid 11 ' has one first face 11a and the second face 11b in contrast to the first face 11a, wherein the first face 11a is and glue-line 21
The surface of contact.It is worth noting that, in the present embodiment, adhesive body 11 ' does not cover second electrode 104, and make the second electricity
Pole 104 is exposed to adhesive body 11 ' outside.That is, the second face 11b of the adhesive body 11 ' of the present embodiment is and luminescence chip 10
Bottom surface (the namely bottom surface of second electrode 104) it is coplanar.
Specifically, adhesive body 11 ' can be formed by injecting glue step.A seal glue is namely first injected in mold
Material can form the initial adhesive body with predetermined shape after adhesive material solidification.However, initial adhesive body is in addition to packet
The side wall surface for covering luminescence chip 10 can also cover the second electrode 104 of luminescence chip 10.Accordingly, in the step for forming adhesive body 11 '
In rapid, can the further initial adhesive body of thinning, until making second electrode 104 be exposed to adhesive body 11 ' outside, in favor of subsequent route
Production.
It should be noted that in other embodiments, also can be omitted thinning step above-mentioned, and directly it is being subsequently formed weight
In the processing procedure of distribution lines structure, it is electrically connected in the line construction of second electrode 104.
Then, as shown in Figure 2 C, temporary support plate 2 is removed, to form an initial encapsulating structure P1 '.Initial encapsulation knot
Structure P1 ' includes luminescence chip 10 and the adhesive body 11 ' for coating 10 side wall surface of luminescence chip.Accordingly, initial encapsulating structure P1 ' tool
There is an a light emission side S1 and bottom side S2 opposite with light emission side S1.First electrode 103 is located at light emission side S1, that is, luminous zone
Side where A1, and second electrode 104 is to be located at bottom side S2.
Significantly, since luminescence chip 10 is set with luminous zone A1 towards temporary support plate 2 previous in step
It sets, therefore in initial encapsulating structure P1 ', luminous zone A1 is not covered by adhesive body 11 ', but is exposed to adhesive body 11
Outside.
Then, as shown in Fig. 2 D and Fig. 2 E, a redistribution line construction 12 is formed in initial encapsulating structure P1 '.First say
It is bright, it is different from existing chip size packages technology, it is that substrate is divided again to make that the embodiment of the present invention, which is with adhesive body 11 ',
It is routed line structure, to form the luminous chip package structure of crystal covering type.A present invention described further below wherein implementation
The details of example production redistribution line construction 12.
As shown in Figure 2 D, at least one is formed in adhesive body 11 ' (be painted two in Fig. 2 D through the through-hole H1 of adhesive body 11 '
It is a).That is, through-hole H1 is to extend to the second face 11b by the first face 11a of adhesive body 11.
Then, as shown in Figure 2 E, redistribution line construction 12 is made.In the present embodiment, redistribution line construction 12 includes
One the first internal connection-wire structure 121 and one for being electrically connected at first electrode 103 is electrically connected in the second of second electrode 104
Connecting line construction 122.First internal connection-wire structure 121 and the second internal connection-wire structure 122 are respectively provided with one first connection pad 121a and one
Second connection pad 122a, and the first connection pad 121a and the second connection pad 122a are to be located at same side, that is, be all located at initial encapsulation knot
The bottom side S2 of structure P1 '.
Furthermore, it is conductive to still further comprise one first conductive layer 121b and first for the first internal connection-wire structure 121
Column 121c, and the first conductive layer 121b can be electrically connected at the first connection pad positioned at bottom side S2 by the first conductive column 121c
121a.In addition, in the present embodiment, the second connection pad 122a of the second internal connection-wire structure 122 then directly covers second electrode 104
On.
Therefore, in the step of forming redistribution line construction 12, it may further comprise: and form a conduction in through-hole H1
Material, to form the first conductive column 121c.In one embodiment, can be formed in through-hole H1 by being electroplated or changing plating first
Conductive column 121c.
Then, first between an electric connection first electrode 103 and the first conductive column 121c is formed in light emission side S1
Conductive layer 121b, and be electrically connected the first connection pad 121a of the first conductive column 121c in bottom side S2 and formed and electrically connect
Meet the second connection pad 122a of second electrode 104.In addition, in one embodiment, adhesive body 11 can be plated in by being electroplated or changing
Two opposite sides respectively form conductive layer.And then respectively to two Conductive Layer Etch, to be formed in the first conductive layer of light emission side S1
121b, and it is formed in the first connection pad 121a and the second connection pad 122a of bottom side S2.The first conductive layer is formed in light emission side S1
121b and bottom side S2 formed the first connection pad 121a and the second connection pad 122a sequencing be not intended to limit in the present invention.
As shown in Figure 2 E, after the production for completing redistribution line construction 12, along pre-defined a plurality of cutting line out
L1 executes a cutting step to initial encapsulating structure P1 ', to form multiple luminous chip package structure P1 being separated from each other.It is logical
It crosses in the manufacturing method of luminous chip package structure P1 provided by the embodiment of the present invention, the crystal-coated light-emitting of no substrate can be formed
Chip-packaging structure P1.
In addition, compared to existing chip size packages technology, using manufacturing method provided by the embodiment of the present invention, no
It needs to make the intraconnections to form crystal covering type chip in the wafer manufacturing stage, so as to which manufacturing cost is greatly reduced.
A and Fig. 3 B referring to figure 3. shows the section signal of the luminous chip package structure of one embodiment of the invention respectively
Figure and schematic top plan view.
The luminous chip package structure P1 of the embodiment of the present invention divides again including a luminescence chip 10, an adhesive body 11 and one
It is routed line structure 12.In addition, luminous chip package structure P1 has a light emission side S1 and a bottom side opposite with light emission side S1
S2.The light emission side S1 being previously mentioned below refers to the side where the luminous zone A1 of luminescence chip 10.
As previously mentioned, luminescence chip 10 has a luminous zone A1, a first electrode 103 and a second electrode 104.At this
In embodiment, first electrode 103 and second electrode 104 are to be located at the opposite side of luminescence chip 10.
In addition, the adhesive body 11 of the present embodiment coats the side wall surface of luminescence chip 10, but and uncoated luminescence chip 10
Top surface and bottom surface.That is, the luminous zone A1 of luminescence chip 10 is exposed to outside adhesive body 11, and do not covered by adhesive body 11
Lid.In the present embodiment, the second face 11b of adhesive body 11 can be coplanar with the surface of second electrode 104.
As shown in Figure 3A, redistribution line construction 12 is set to adhesive body 11, and is electrically connected at first electrode including one
103 the first internal connection-wire structure 121 and one be electrically connected at second electrode 104 the second internal connection-wire structure 122.
In the present embodiment, the first internal connection-wire structure 121 include one positioned at light emission side S1 the first conductive layer 121b, consistent
The the first conductive column 121c and one for wearing adhesive body 11 is located at the first connection pad 121a of bottom side S2, and the first conductive layer, first leads
Electric column 121c and the first connection pad 121a are electrically connected to each other.Accordingly, can sequentially pass through positioned at the first electrode 103 of light emission side S1
First conductive layer 121b and the first conductive column 121c is electrically connected the first connection pad 121a for being located at bottom side S2.
B referring to figure 3., the first conductive layer 121b of the present embodiment have the opening of an exposure luminous zone A1.In addition, first
The quantity of conductive column 121c can select according to actual needs, and the present invention is not intended to limit.For example, it shines for high-power
Chip 10, the first internal connection-wire structure 121 can have the first more conductive column 121c.For lower-powered luminescence chip
10, the first internal connection-wire structure 121 can also be with only one the first conductive column 121c.
That is, encapsulation procedure provided by the embodiment of the present invention may be not only suitable for the small luminescence chip of encapsulation power
10, it can also be suitable for encapsulating high-power luminescence chip 10 by adjusting the quantity of the conductive column in adhesive body 11.
Referring again to Fig. 3 A, the second internal connection-wire structure 122 includes the second connection pad 122a positioned at bottom side S2, and the second connection pad
122a covers second electrode 104.Accordingly, the luminous chip package structure P1 of the present embodiment is used to be electrically connected the of outside line
One connection pad 121a and the second connection pad 122a is to be located at the same side of luminous chip package structure P1, that is, be located at the core that shines
The bottom side S2 of chip package P1.Accordingly, the luminous chip package structure P1 of the embodiment of the present invention can pass through surface fitting side
Formula is assembled in again on another circuit substrate.
It should be noted that although in the present embodiment, adhesive body 11 absolutely not covers second electrode 104, at it
In his embodiment, adhesive body 11 can also partly cover the surface of second electrode 104.In that case, the second connection pad
122a can be formed on the second face 11b of adhesive body 11, then be electrically connected at second electrode 104 by another conductive column.
In addition, manufacturing method provided by Fig. 1 is suitable for being packaged the luminescence chip 10 of a variety of different structures, and shape
At crystal-coated light-emitting chip-packaging structure P1.Referring to figure 4. to Fig. 6, the luminescence chip of different embodiments of the invention is shown respectively
The diagrammatic cross-section of encapsulating structure.These embodiments and the identical component of the embodiment of Fig. 3 A label having the same, and it is identical
Part repeat no more.
In the luminous chip package structure P1 of Fig. 4, the second mirror layer of luminescence chip 10 has multiple be separated from each other
Minor structure 102a, thus make luminescence chip 10 have multiple discontinuous luminous zone A1.In the luminous chip package structure of Fig. 5
In P1, the area of the second connection pad 122a is greater than the area of second electrode 104, to promote the heat dissipation effect to luminescence chip 10.
In the luminous chip package structure P2 of Fig. 6, the first electrode 103 and second electrode 104 of luminescence chip 10 are
Positioned at same side, that is, it is all located at the light emission side S1 of luminous chip package structure P1.
Accordingly, the second internal connection-wire structure 122 can further comprise one positioned at light emission side S1 the second conductive layer 122b and
One runs through the second conductive column 122c of adhesive body 11.Second conductive layer 122b, the second conductive column 122c and the second connection pad 122a
It is electrically connected to each other, and second electrode 104 is electrically connected by the second conductive layer 122b and the second conductive column 122c and is located at bottom
The second connection pad 122a of side S2.That is, no matter the position of the first electrode 103 of luminescence chip 10 and second electrode 104 is such as
What is arranged, and by the redistribution line construction 12 in adhesive body 11, can form the luminous chip package structure P1 of crystal covering type.
In addition, in the present embodiment, the second connection pad 122a and not in contact with 10 bottom of luminescence chip.Accordingly, redistribution route
Structure 12 can also further comprise the conductive radiating layer 123 positioned at 10 bottom of luminescence chip, to radiate to luminescence chip 10.At this
In embodiment, conductive radiating layer 123 can be separated from each other setting with the first connection pad 121a.In addition, conductive radiating layer 123, first connecing
Pad 121a and the second connection pad 122a can be formed in same step.
It should be noted that luminescence chip 10 and another component can be packaged in by the packaging method of the embodiment of the present invention jointly
In the same encapsulating structure, and the size of the component is not necessarily identical with luminescence chip 10.
Fig. 7 is please referred to, shows the schematic top plan view of the luminous chip package structure of another embodiment of the present invention.In this implementation
In example, luminescence chip 10 and an encapsulation jointly of passive component 13, and be electrically connected to each other by redistribution line construction 12.
Specifically, luminous chip package structure P3 still further comprises the passive component 13 in an embedment adhesive body 11.
Redistribution line construction 12 still further comprises one to make passive component 13 be electrically connected the third intraconnections of luminescence chip 10
Structure 124.
Passive component 13 above-mentioned is, for example, Zener diode (Zener diode), capacitance component or Inductive component, this hair
It is bright to be not intended to limit.In the present embodiment, be illustrated by taking Zener diode as an example, and Zener diode be electrically connected at it is luminous
Chip 10, using the electrostatic protection component as luminescence chip 10.In the present embodiment, passive component 13, which also has, to be located at passively
The positive electrode 130 and negative electrode 131 of 13 liang of opposite sides of component, and the positive electrode 130 of passive component 13 and negative electrode 131 are logical
Overweight distribution lines structure 12 is electrically connected luminescence chip 10, to provide luminescence chip 10 electrostatic protection.
As shown in fig. 7, third internal connection-wire structure 124 includes that a third conductive layer 124a and one for being located at light emission side runs through
The third conductive column 124b of adhesive body 11.Third conductive layer 124a is electrically connected at the positive electrode 130 of passive component 13, and with
One conductive layer 121b is separated from each other.Third conductive layer 124a and passive component 13 can be another in adhesive body 11 by being formed in
One conductive column is electrically connected positive electrode 130, or directly contacts with positive electrode 130.
Third conductive layer 124a can be electrically connected at the first connection pad 121a positioned at bottom side by third conductive column.In addition,
The negative electrode 131 of passive component 13 is to be electrically connected the second connection pad 122a for being located at bottom side.Accordingly, luminescence chip 10 and passive group
Part 13 can establish electrical connection.
Electrical communication is established it should be noted that being only for illustrating luminescence chip 10 and passive component 13 shown in Fig. 7
One way in which.In other embodiments, can also according to the demand of circuit design, adjust third conductive layer 124a and
The structure of third conductive column 124b and position, to form different third internal connection-wire structures 124.
Multiple luminescence chips 10 can also be encapsulated in the same encapsulating structure by the packaging method of the embodiment of the present invention.It please join
According to Fig. 8 and Fig. 9, the schematic top plan view of the luminous package structure of different embodiments of the invention is shown respectively.
As shown in figure 8, the luminous chip package structure P4 of the present embodiment includes multiple luminescence chips 10.That is, envelope
Colloid 11 can coat the side wall surface of each luminescence chip 10.In addition, multiple luminescence chips 10 can divide through this embodiment again
Wiring line structure 12 is electrically connected to each other.For example, the first electrode 103 of these luminescence chips 10 can be electrically connected jointly
To the first conductive layer 121b, and the first conductive layer 121b electric connection is electrically connected to by multiple first conductive column 121c and is located at
First connection pad 121a of bottom side.
In addition, the second electrode 104 of these luminescence chips 10 can be electrically connected to the second connection pad positioned at bottom side jointly
122a.Specifically, in the present embodiment, the second connection pad 122a can cover the bottom surface of all luminescence chips 10, in electrical contact
The second electrode of all luminescence chips 10.Accordingly, the first connection pad 121a of the luminous chip package structure P1 of the present embodiment and
Two connection pad 122a are positioned at the bottom side of luminous chip package structure P1.
When forming the luminous chip package structure P4 of the embodiment of the present invention, multiple luminescence chips 10 are arranged at the beginning
When on temporary support plate 2, multiple luminescence chips 10 can be divided into multiple subgroups in advance, had in each subgroup predetermined
The luminescence chip 10 of quantity.After forming adhesive body, redistribution line construction 12 is formed, so that more in each subgroup
A luminescence chip 10 is electrically connected to each other.And then cutting step is executed, to form multiple luminous chip package structure P4, and
Luminescence chip 10 in the same subgroup can be encapsulated in same luminous chip package structure P4.
Luminous chip package structure P4 can form area source, and apply in lighting device.Therefore, luminescence chip encapsulation knot
Structure P4 does not need to be set on another circuit board, and directly can receive electric power by power supply line.In that case, may be used
So that the light emission side of luminous chip package structure is arranged in the first connection pad 121a and the second connection pad 122a.
Please refer to Fig. 9, the embodiment of the luminous chip package structure P5 and Fig. 8 of the present embodiment the difference is that, this reality
The the first connection pad 121a and the second connection pad 122a for applying the luminous chip package structure P5 of example are to be located at light emission side.
Specifically, in the present embodiment, multiple luminescence chips 10 can also be electrical each other by redistribution line construction 12
Connection.But the first internal connection-wire structure 121 only has the first conductive layer 121b and the first connection pad 121a positioned at light emission side.It is more
The first electrode 103 of a luminescence chip 10 can be electrically connected to the same first connection pad 121a by the first conductive layer 121b.
Second internal connection-wire structure 122 includes the second conductive layer 122b, the second conductive column 122c and the second connection pad 122a.?
In the present embodiment, the second conductive layer 122b is positioned at the bottom side of luminous chip package structure P1, with luminescence chip 10 in electrical contact
Second electrode 104.In addition, the second connection pad 122a of the present embodiment is to be located at light emission side.Therefore, each luminescence chip 10
Second electrode 104 can be by being located at the second conductive layer 122b of bottom side and through the second conductive column 122c of adhesive body 11, electricity
Property is connected to the second connection pad 122a positioned at light emission side.
In the embodiment of Fig. 8 and Fig. 9, the quantity of the luminescence chip 10 in luminous chip package structure P4, P5 can root
Change according to actual demand, the present invention is not intended to limit.
Then, the details process of the luminescence chip packaging method of another embodiment of the present invention please refers to Figure 10 A to Figure 10 E,
It shows the partial cutaway schematic of the luminous chip package structure of another embodiment of the present invention in each step respectively.
As shown in Figure 10 A, in the present embodiment, when setting luminescence chip 10 when on temporary support plate 2, luminescence chip 10
It is to be arranged on temporary support plate 2 with luminous zone A1 back to glue-line 21.That is, luminescence chip 10 is bonded by bottom surface
In glue-line 21.
Then, as shown in Figure 10 B, an adhesive body 11 ' is formed, to coat luminescence chip 10.In the present embodiment, adhesive body
11 ' can coat entire luminescence chip 10.Specifically, adhesive body 11 ' includes around portion 110 ' and being connected to around portion 110 '
Covering part 111 ', wherein coat the side wall surface of luminescence chip 10 around portion 110 ', and covering part 111 ' can cover entire shine
Area A1.
For another angle, adhesive body 11 ' has the first face 11a and second face 11b opposite with the first face 11a,
In the first face 11a be adhesive body 11 ' contact glue-line 21 surface.Accordingly, the first face 11a of adhesive body 11 ' is relative to glue-line 21
Surface between height, can be greater than luminescence chip 10 top surface relative to the height between the surface of glue-line 21.Therefore, in this reality
It applies in example, the material of adhesive body 11 ' should select the material that light beam caused by luminescence chip 10 can be made to penetrate.
Then, as illustrated in figure 10 c, temporary support plate 2 is removed, to form initial encapsulating structure P6 '.Initial encapsulating structure
P6 ' includes luminescence chip 10 and the adhesive body 11 ' for coating 10 side wall surface of luminescence chip.Accordingly, initial encapsulating structure P6 ' has
An one light emission side S1 and bottom side S2 opposite with light emission side S1.In the present embodiment, adhesive body 11 ' the second face 11b can and
The bottom surface of luminescence chip 10 is coplanar.
Figure 10 D and Figure 10 E is please referred to, forms redistribution line construction 12 in initial encapsulating structure P6 '.Specifically,
As shown in Figure 10 D, the through-hole H1 (two are painted in Figure 10 D) of at least one perforation adhesive body 11 is formed in adhesive body 11 ', and
At least one opening H2 (two are painted in Figure 10 D) to exposure first electrode 103.That is, through-hole H1 is by adhesive body
11 the first face 11a extends to the second face 11b, and the H2 that is open is to extend to first electrode by the first face 11a of adhesive body 11
103。
As shown in figure 10e, redistribution line construction 12 is made, and redistribution line construction 12 includes one being electrically connected at the
First internal connection-wire structure 121 of one electrode 103 and one be electrically connected at second electrode 104 the second internal connection-wire structure 122.
First internal connection-wire structure 121 of the present embodiment includes the first conductive layer 121b, the first conductive column 121c, the first conduction
Bolt 121d and the first connection pad 121a.First conductive plugs 121d is located in opening H2, with first electrode 103 in electrical contact, and the
One conductive column 121c is located in through-hole H1.First conductive layer 121b is set on the first face 11a of adhesive body 11, and by first
Conductive plugs 121d extends to the first conductive column 121c.In addition, the first connection pad 121a is located at the second face 11b of adhesive body 11 and electrical
Connect the first conductive column 121c.
That is, the first electrode 103 covered by adhesive body 11 can pass through the first conductive plugs 121d, the first conductive layer
121b and the first conductive column 121c is electrically connected to the first connection pad 121a positioned at bottom side S2.In addition, in the present embodiment, the
Second connection pad 122a of two internal connection-wire structures 122 is then directly covered in second electrode 104.
Therefore, the step of forming redistribution line construction 12 may further comprise: and first fill out in through-hole H1 and opening H2
Enter a conductive material, to form the first conductive column 121c and the first conductive plugs 121d.Then, one is formed electrically in light emission side S1
Connect the first conductive layer 121b between the first conductive plugs 121d and the first conductive column 121c.In addition, forming electricity in bottom side S2
Property connection the first conductive column 121c the first connection pad 121a, and be electrically connected the second connection pad 122a of second electrode 104.
As shown in figure 10e, after the production for completing redistribution line construction 12, along pre-defined a plurality of cutting line out
L1 executes a cutting step to initial encapsulating structure P6 ', to form multiple luminous chip package structure P6 being separated from each other.Such as
Shown in Figure 11, through the embodiment of the present invention in the manufacturing method of provided luminous chip package structure P6, no substrate can be formed
Crystal-coated light-emitting chip-packaging structure P6.
As previously mentioned, the luminous chip package structure P1 of luminous chip package structure P6 and Fig. 3 A of the present embodiment is different
Place is that adhesive body 11 includes one around portion 110 and a covering part 111, and covering part 111 can cover luminescence chip 10
Luminous zone A1.In addition, since covering part 111 can cover the first electrode 103 of luminescence chip 10, the first internal connection-wire structure
121 further include the first conductive plugs 121d in an insertion covering part 111, is led so that first electrode 103 can be electrically connected to first
Electric layer 121b.
It should be noted that as long as changing the direction that temporary support plate 2 is arranged in luminescence chip 10 at the beginning, Figure 10 A to figure
The process of the packaging method of 10E can also be applied to encapsulate multiple luminescence chips 10 in the same encapsulating structure, or application
It is encapsulated in the same encapsulating structure in by another passive component 13 and luminescence chip 10.
In addition to this, the luminescence chip packaging method of the embodiment of the present invention can also further when packaged, in luminescence chip
10 top makes different optical textures, to be applied to different fields.Figure 12 to Figure 16 is please referred to, shows this hair respectively
The diagrammatic cross-section of the luminous chip package structure of bright difference embodiment.
As shown in Figure 12 to Figure 16, the covering part 111 of adhesive body 11 has a light output surface for corresponding to luminous zone A1, and
Light output surface has an optical texture 111S.Optical texture 111S above-mentioned may include multipoint condensing structure, single-point optically focused knot
Structure, equal photo structure, brightening structure and be at least one of of an optical grating construction.
In the embodiment of Figure 12 and Figure 13, optical texture 111S is all multipoint condensing structure.Figure 12 and Figure 13 points
It is not painted the multipoint condensing structure of different embodiments.That is, the going out by covering part 111 of light beam caused by luminescence chip 10
When optical surface is emitted, multiple beamlets can be divided by optical texture 111S.
In addition, in the embodiment of figure 14, optical texture 111S is brightening structure.Light beam caused by luminescence chip 10 by
When the light output surface outgoing of covering part 111, optical texture 111S can be such that the light-emitting angle of light beam reduces within a predetermined range, and can
It concentrates light beam when outgoing more, and then improves brightness.
In the embodiment of Figure 15, optical texture 111S be single-point concentration structure, be, for example, Fresnel Lenses either
General lens.Accordingly, when light beam caused by luminescence chip 10 is emitted by the light output surface of covering part 111, optics knot can be passed through
Structure 111S is accumulated.In the embodiment of figure 16, optical texture 111S is optical grating construction, and luminous chip package structure P7 can be made to produce
The light beam of raw single mode.
Specifically, optical texture can be formed in the light output surface of covering part 111 together when forming adhesive body 11 '.
For example, adhesive material can be poured by using the mold with predetermined shape in a mold, had to form light output surface
The adhesive body 11 ' of optical texture.Later, redistribution line construction 12 is formed in adhesive body 11 '.In other embodiments,
Redistribution line construction 12 can formed and then passing through the processing procedures such as coining, etching or laser engraving, in covering part 111
Light output surface forms optical texture.In addition, the step of forming optical texture can execute before the step S500 for executing Fig. 1.
It is worth noting that, in the prior art, luminous chip package structure is when being applied in electronic product, usually still
Need to cooperate another optical module come using.Packaging method provided by the above embodiment of the present invention, can when packaged together
The optical texture 111S for corresponding to backend application is formed above luminescence chip 10.Therefore, the luminescence chip of the embodiment of the present invention
Encapsulating structure P1 is not needed again additionally using optical module, and can further reduce the volume of electronic product.
In other embodiments, when multiple luminescence chips 10 are encapsulated in the same luminous chip package structure P1, envelope
The covering part 111 of colloid 11 can cover the luminous zone A1 of all luminescence chips 10.In this embodiment, it can also be formed with light
Learn the covering part 111 of structure 111S.Therefore, as long as optical texture can be formed together in the processing procedure of encapsulating light emitting chip 10
111S, the present invention are not intended to limit the quantity either arrangement mode of luminescence chip 10.
[beneficial effect of embodiment]
A wherein beneficial effect of the invention is, light-emitting assembly packaging structure provided by the present invention and packaging method,
It can be by the technical solution of " forming redistribution line construction 12 in adhesive body 11 ", to form the crystal-coated light-emitting core without support plate
Chip package P1.Compared to encapsulating structure manufactured by existing wire-bonding package technology, luminescence chip of the invention encapsulates knot
The volume of structure P1~P7 is smaller.
In addition, the bonding pad materials for wiring are logical in the encapsulating structure manufactured by the existing wire-bonding package technology of application
It is often used golden (Au), and there is certain thickness, about 1 μm to 2 μm, thus higher cost.In comparison, in the nothing of the present embodiment
In crystal-coated light-emitting chip-packaging structure P1~P7 of support plate, (second leads the first conductive layer 121b of redistribution line construction 12
Electric layer 122b), the material of the first connection pad 121a and the second connection pad 122a be readily modified as copper, or it is gold-plated again by substrate of copper
(about 0.1 μm to 0.5 μm) can substantially reduce the dosage of gold, to reduce cost.
On the other hand, for compared to existing chip size packages technology, encapsulation side provided by the embodiment of the present invention
Method is to be initially formed adhesive body 11 and then in forming redistribution line construction 12 on adhesive body 11 and luminescence chip 10, and can
It is omitted in wafer manufacturing stage formation interconnection wiring, so as to reduce manufacturing cost.
In addition, application chip grade scale packaging techniques can not once encapsulate multiple sizes and the different crystal grain of function.This hair
Packaging method provided by bright embodiment then can be common by the different crystal grain of luminescence chip 10 and size and function according to demand
Encapsulation, and electric connection between the two is established by redistribution line construction 12, so as to keep backend application range wider
It is more elastic.
It, can be according to subsequent applications for the present invention wherein the luminous chip package structure P7 of an embodiment
Demand directly forms optical texture above the luminous zone A1 of luminescence chip 10 in encapsulation process.Therefore, when luminescence chip seals
It when assembling structure P7 is applied in another electronic product, does not need again additionally using optical module, and can further reduce electronics
The volume of product.
Content disclosed above is only preferable possible embodiments of the invention, not thereby limits to right of the invention and wants
The protection scope asked, therefore all equivalence techniques variations done with description of the invention and accompanying drawing content, are both contained in the present invention
Scope of protection of the claims in.
Claims (21)
1. a kind of luminous chip package structure, which is characterized in that the luminous chip package structure includes:
One luminescence chip has a luminous zone, a first electrode and a second electrode；
One adhesive body coats the side wall surface of the luminescence chip, at least with the supporting body as the luminescence chip；And
One redistribution line construction, is set to the adhesive body, wherein the redistribution line construction includes an electric connection
The second internal connection-wire structure of the second electrode, institute are electrically connected in the first internal connection-wire structure of the first electrode and one
It states the first internal connection-wire structure and second internal connection-wire structure is respectively provided with one first connection pad and one second connection pad, and described the
One connection pad and second connection pad are located at the same side of the luminous chip package structure.
2. luminous chip package structure as described in claim 1, which is characterized in that the luminous chip package structure has one
Light emission side and a bottom side opposite with the light emission side, first connection pad and second connection pad are all located at the bottom side.
3. luminous chip package structure as claimed in claim 2, which is characterized in that the first electrode is located at the light out
Side, first internal connection-wire structure still further comprise the first conductive layer that one is located at the light emission side and one through the envelope
First conductive column of colloid, and the first electrode passes through first conductive layer and first conductive column, to be electrically connected
First connection pad positioned at the bottom side.
4. luminous chip package structure as claimed in claim 2, which is characterized in that the second electrode is located at the bottom side,
Second connection pad covers the second electrode.
5. luminous chip package structure as claimed in claim 4, which is characterized in that the area of second connection pad is greater than or waits
In the area of the second electrode, the second electrode is completely covered.
6. luminous chip package structure as claimed in claim 2, which is characterized in that the second electrode is located at the light out
Side, second internal connection-wire structure still further comprise the second conductive layer that one is located at the light emission side and one through the envelope
Second conductive column of colloid, and the second electrode is connected by second conductive layer and second conductive column with electrical
Connect second connection pad positioned at the bottom side.
7. luminous chip package structure as described in claim 1, which is characterized in that the redistribution line construction is also further
The conductive radiating layer for being located at the luminescence chip bottom including one, the conductive radiating layer are separated from each other with first connection pad and set
It sets.
8. luminous chip package structure as described in claim 1, which is characterized in that the luminous chip package structure also into
One step includes: the intracorporal passive component of the embedment sealing, wherein the redistribution line construction still further comprises a use
So that the passive component is electrically connected the third interconnection wiring structure of the luminescence chip.
9. luminous chip package structure as described in claim 1, which is characterized in that the luminous zone of the luminescence chip is naked
It is exposed to outside the adhesive body and is not covered by the adhesive body.
10. luminous chip package structure as described in claim 1, which is characterized in that the adhesive body include one around portion with
And a covering part, the circular portion coat the side wall surface of the luminescence chip, the covering part covers the luminescence chip
The luminous zone.
11. luminous chip package structure as claimed in claim 10, which is characterized in that a light output surface of the covering part is set
There is an optical texture.
12. luminous chip package structure as claimed in claim 11, which is characterized in that the optical texture includes multipoint condensing
It is at least one of among structure, a single-point concentration structure, an equal photo structure, a brightening structure and an optical grating construction.
13. luminous chip package structure as described in claim 1, which is characterized in that the luminous chip package structure is also
Further comprise: in addition multiple luminescence chips, multiple luminescence chips are electrically connected each other by the redistribution line construction
It connects.
14. luminous chip package structure as claimed in claim 13, which is characterized in that the luminous chip package structure tool
There are a light emission side and a bottom side opposite with the light emission side, wherein first connection pad is all located at second connection pad
The bottom side.
15. luminous chip package structure as claimed in claim 13, which is characterized in that the luminous chip package structure tool
There are a light emission side and a bottom side opposite with the light emission side, wherein first connection pad is all located at second connection pad
The light emission side, and the second electrode is located at the bottom side, second internal connection-wire structure still further comprises one and is located at institute
State the second conductive layer of light emission side and the second conductive column that at least one runs through the adhesive body, and the second electrode passes through institute
It states the second conductive layer and second conductive column is electrically connected second connection pad for being located at the light emission side.
16. a kind of packaging method of luminescence chip, which is characterized in that the packaging method of the luminescence chip includes:
An at least luminescence chip is set on a temporary support plate, wherein the temporary support plate includes an adhesive, and institute
It states luminescence chip to combine by the adhesive and the temporary support plate, and the luminescence chip has a luminous zone, one
First electrode and a second electrode；
An adhesive body is formed, the adhesive body at least coats the side wall surface and the covering adhesive of the luminescence chip
Surface；
The temporary support plate is removed, to form an initial encapsulating structure；And
A redistribution line construction is formed in the initial encapsulating structure, the redistribution line construction is electrically connected at including one
First internal connection-wire structure of the first electrode and one be electrically connected at the second electrode the second internal connection-wire structure, it is described
First internal connection-wire structure and second internal connection-wire structure are respectively provided with one first connection pad and one second connection pad, and described first
Connection pad and second connection pad are located at the same side of the luminous chip package structure.
17. the packaging method of luminescence chip as claimed in claim 16, which is characterized in that the encapsulation side of the luminescence chip
Method, which may further comprise:, executes a cutting step to the initial encapsulating structure, to form the luminous chip package structure.
18. the packaging method of luminescence chip as claimed in claim 16, which is characterized in that at least one luminous core is being arranged
Piece is in the step on the temporary support plate, and the luminescence chip is by the luminous zone in face of setting in a manner of the adhesive
It is placed on the temporary support plate.
19. the packaging method of luminescence chip as claimed in claim 18, which is characterized in that the initial encapsulating structure has one
Light emission side and a bottom side opposite with the light emission side, the first electrode are located at the light emission side, the second electrode position
In the bottom side, and the step of forming the redistribution line construction may further comprise:
At least one through-hole for running through the adhesive body is formed in the adhesive body；
A conductive material is formed at least one through-hole, to form at least one first conductive column；
First conductive layer being electrically connected between the first electrode and first conductive column is formed in the light emission side；
And
First connection pad of first conductive column is electrically connected in the bottom side and is electrically connected described
Second connection pad of two electrodes.
20. the packaging method of luminescence chip as claimed in claim 16, which is characterized in that at least one luminous core is being arranged
In the step on the temporary support plate, the luminescence chip is set piece in such a way that the luminous zone is back to the adhesive
It is placed on the temporary support plate.
21. the packaging method of luminescence chip as claimed in claim 16, which is characterized in that the adhesive body includes one around portion
And one the covering luminous zone covering part, the circular portion coats the side wall surface of the luminescence chip, and described covers
One light output surface of cover has an optical texture.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810264816.3A CN110323211A (en) | 2018-03-28 | 2018-03-28 | Luminous chip package structure and packaging method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810264816.3A CN110323211A (en) | 2018-03-28 | 2018-03-28 | Luminous chip package structure and packaging method |
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| CN110323211A true CN110323211A (en) | 2019-10-11 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009020365A2 (en) * | 2007-08-08 | 2009-02-12 | Korea Photonics Technology Institute | Light emitting diode with metal piles and multi-passivation layers and its manufacturing method |
| CN102593275A (en) * | 2011-01-13 | 2012-07-18 | 台湾积体电路制造股份有限公司 | Method of fabricating light emitting diode package and light emitting diode thereof |
| US20140097536A1 (en) * | 2012-10-09 | 2014-04-10 | Avago Technologies General Ip (Singapore) Pte. Ltd | TWO-SIDED-ACCESS EXTENDED WAFER-LEVEL BALL GRID ARRAY (eWLB) PACKAGE, ASSEMBLY AND METHOD |
| US9324697B1 (en) * | 2015-03-16 | 2016-04-26 | Toshiba Corporation | Chip-on-heatsink light emitting diode package and fabrication method |
| CN109904179A (en) * | 2017-12-07 | 2019-06-18 | 三星电机株式会社 | Fan-out-type sensor package |
-
2018
- 2018-03-28 CN CN201810264816.3A patent/CN110323211A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009020365A2 (en) * | 2007-08-08 | 2009-02-12 | Korea Photonics Technology Institute | Light emitting diode with metal piles and multi-passivation layers and its manufacturing method |
| CN102593275A (en) * | 2011-01-13 | 2012-07-18 | 台湾积体电路制造股份有限公司 | Method of fabricating light emitting diode package and light emitting diode thereof |
| US20140097536A1 (en) * | 2012-10-09 | 2014-04-10 | Avago Technologies General Ip (Singapore) Pte. Ltd | TWO-SIDED-ACCESS EXTENDED WAFER-LEVEL BALL GRID ARRAY (eWLB) PACKAGE, ASSEMBLY AND METHOD |
| US9324697B1 (en) * | 2015-03-16 | 2016-04-26 | Toshiba Corporation | Chip-on-heatsink light emitting diode package and fabrication method |
| CN109904179A (en) * | 2017-12-07 | 2019-06-18 | 三星电机株式会社 | Fan-out-type sensor package |
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Application publication date: 20191011 |