CN110323188A - A kind of IGBT module of aluminium silicon carbide of high-volume fractional and preparation method thereof - Google Patents
A kind of IGBT module of aluminium silicon carbide of high-volume fractional and preparation method thereof Download PDFInfo
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- CN110323188A CN110323188A CN201910643944.3A CN201910643944A CN110323188A CN 110323188 A CN110323188 A CN 110323188A CN 201910643944 A CN201910643944 A CN 201910643944A CN 110323188 A CN110323188 A CN 110323188A
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- silicon carbide
- aluminium silicon
- aluminium
- precast body
- igbt module
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
Abstract
The present invention provides a kind of IGBT module of aluminium silicon carbide and preparation method thereof of high-volume fractional, including silicon carbide precast body 62~78% and alusil alloy 22~38%, the silicon carbide precast body is combined by aluminium silicon carbide coarse powder, aluminium silicon carbide fine powder, aluminium silicon carbide micro mist and binder according to percent by volume.The present invention silicon carbide precast body and alusil alloy in the way of dipping in the IGBT module by high―temperature nuclei generation aluminium silicon carbide, reduce the expansion rate of IGBT module, while strengthening the thermal diffusivity and intensity of IGBT module.
Description
Technical field
The present invention relates to technical field of composite materials, more particularly, to a kind of IGBT mould of the aluminium silicon carbide of high-volume fractional
Block and preparation method thereof.
Technical background
Along with the development of semiconductor technology, (such as IGBT power mould is continuously improved in high power module chip integration
Block), chip power be continuously improved, the operating temperature of igbt chip also therewith constantly rise, corresponding device encapsulating material is especially
The requirement of heat-radiating substrate is also higher and higher, and not requiring nothing more than heat-radiating substrate has the lower line expansion system to match with electronic chip
Number, it is desirable that meet light-weighted demand, it is desirable that the density of material is low as far as possible, elasticity modulus is high as far as possible, but also wants
There is higher thermal conductivity, and has certain machinability.
The thermal expansion coefficient of silicon chip only has 4 × 10-6/ K, in the prior art, IGBT heat-radiating substrate material are generallyd use
Metallic aluminium, copper can cut down metal, tungsten copper, molybdenum copper etc., and the suitable coefficient of expansion (CTE) having can such as cut down metal (CTE=5.9 × 10-6/
K), but its thermal conductivity is low (17W/mk), and density is big (8.3 g/cm3)；Some thermal conductivities are big, such as metal copper plate thermal conductivity (400
W/mk), also high (CTE=17 × 10 of the coefficient of expansion but under high temperature-6/ K), so that the welding chip on its substrate deformation desoldering is occurred existing
As；Thermal expansion coefficient of composites and thermal conductivity also is just met the requirements, such as wolfram steel (W85Cu15) thermal expansion coefficient (CTE=
6.3~7.0 × 10-6/ K) thermal conductivity (160~190W/mk), but density is high (16.4 g/cm3), and manufacturing cost is high, and processing is tired
Difficulty, so the technical issues of greatly limiting the module application development of powerful IGBT.
Summary of the invention
Technical problems to be solved by the inivention
Invention broadly provides IGBT modules of aluminium silicon carbide of a kind of high-volume fractional and preparation method thereof, on solving
It states and is proposed in background technique, since the coefficient of thermal expansion of the baseplate material of IGBT module and the coefficient of thermal expansion of electronic chip have one
Fixed gap, so that deformation desoldering phenomenon, Composite Thermal Expansion also also occurs in the welding chip on the substrate made
The technical issues of coefficient and thermal conductivity are just met the requirements, but manufacturing cost is high, processing difficulties.
Technical solution
To achieve the above object, the invention provides the following technical scheme: a kind of IGBT module of the aluminium silicon carbide of high-volume fractional,
Including silicon carbide precast body 62~78% and alusil alloy 22~38%, the silicon carbide precast body is by aluminium silicon carbide coarse powder, aluminium carbon
SiClx fine powder, aluminium silicon carbide micro mist and binder are combined according to percent by volume.
Further, the partial size of the aluminium silicon carbide coarse powder, the aluminium silicon carbide fine powder and the aluminium silicon carbide micro mist point
It Wei not 120~180um, 30~63um, 6~10um.
Further, the slurry formulation of the silicon carbide precast body: 45%~65%(of aluminium silicon carbide coarse powder partial size in mass ratio
Range D50>=120um), aluminium silicon carbide fine powder 15%~25%(particle size range D50≤ 60um), aluminium silicon carbide micro mist 8%~12%(
Diameter range D50≤ 15um), pore creating material starch 5%~12%, binder aluminium dihydrogen phosphate aqueous solution (content 9%~15%).
A kind of preparation method of the IGBT module of the aluminium silicon carbide of high-volume fractional, comprising the following steps: S1: be configured to
The net molding mixed slurry of aluminium silicon carbide precast body；
S2: aluminium silicon carbide precast body dry pressure formed, that porous structure is prepared into through molding sintering is used；
S3: fusing aluminium alloy, preheating loads the net molding die of silicon carbide precast body, by molten aluminum pressure impregnation to porous silicon carbide
In precast body；
S4: after molding cooling to be solidified, being taken out from mold by product using demoulding tooling, do not process or process and be electroplated on a small quantity,
Just stand-by package substrate is made.
Further, manufactured silicon carbide precast body is honeycomb setting in step S2.
Further, slurry is prepared in proportion, through mechanical stirring 6~10 hours, using two-way compression molding, briquetting pressure
50~200MPa is heated to 500 DEG C~650 DEG C with 1.5~2.5 DEG C/min speed, keeps the temperature 1.5~3h, furnace cooling obtains more
The silicon carbide precast body of pore structure, volume fraction 62%~78%.
Further, the silicon carbide precast body processed is put into net mold for forming and tooling, mold is preheating to 500
DEG C~800 DEG C, it is kept the temperature after alusil alloy fusing.
Further, apply 3~10MPa of air pressure after first vacuumizing in silicon carbide precast body in step S3, by molten aluminum pressure
Power is impregnated into the aluminium silicon carbide in mold, and pressing time 3~40 minutes.
It compares with the prior art, the beneficial effects of the present invention are:
The present invention carries out the aluminium for being mixed and made into high-volume fractional in certain proportion by using silicon carbide precast body and alusil alloy
Carbofrax material, the material is with low thermal expansion (thermal expansion coefficient CTE=6.0~8.0 × 10-6/ K), good heat dissipation effect
(180 W/mk of thermal conductivity >), intensity is big (320 MPa of bending strength >), and good rigidity (180 GPa of Young's modulus >), density is small
(2.92~3.12 g/cm3), the effect of high reliablity.
Detailed description of the invention
Fig. 1 is the package structure diagram of IGBT module.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Embodiment 1, including silicon carbide precast body 62~78% and alusil alloy 22~38%, the alusil alloy are immersed in
In the silicon carbide precast body, and the silicon carbide precast body is by aluminium silicon carbide coarse powder, aluminium silicon carbide fine powder, aluminium silicon carbide micro mist
It is combined with binder according to percent by volume.
The partial size of the aluminium silicon carbide coarse powder, the aluminium silicon carbide fine powder and the aluminium silicon carbide micro mist is respectively 120~
180um, 30~63um, 6~10um.
The slurry formulation of the silicon carbide precast body: 45%~65%(of aluminium silicon carbide coarse powder particle size range D in mass ratio50≥
120um), 15%~25%(of aluminium silicon carbide fine powder particle size range D50≤ 60um), aluminium silicon carbide micro mist 8%~12%(particle size range D50
≤ 15um), pore creating material starch 5%~12%, binder aluminium dihydrogen phosphate aqueous solution (content 9%~15%).
Embodiment 2, a kind of technical solution of the preparation method of the IGBT module of the aluminium silicon carbide of high-volume fractional are as follows:
Step 1: 45%~65%(of aluminium silicon carbide coarse powder particle size range D in mass ratio50>=120um), aluminium silicon carbide fine powder 15%~
25%(particle size range D50≤ 60um), aluminium silicon carbide micro mist 8%~12%(particle size range D50≤ 15um), pore creating material starch 5%~
12%, binder aluminium dihydrogen phosphate aqueous solution (content 9%~15%).Mechanical stirring 6-10 hours.The mixing of aluminium silicon carbide precast body
Slurry；
Step 2: using two-way compression molding, 50~200MPa of briquetting pressure.Sintering process: with 1.5~2.5 DEG C/min speed
500 DEG C~650 DEG C are heated to, 1.5~3h is kept the temperature, furnace cooling obtains the silicon carbide precast body of porous structure, volume fraction 62%
~78%, it is prepared into the aluminium silicon carbide precast body of porous structure；
Step 3: fusing aluminium alloy, preheating loads the net molding die of silicon carbide precast body, by molten aluminum pressure impregnation to porous carbon
In SiClx precast body, and impregnation technology: it 500 DEG C~800 DEG C of mold preheating temperature, 600 DEG C~800 DEG C of temperature of aluminum liquid, vacuumizes
20~200 Pa, 3~10 MPa of impregnation pressure, pressing time 3~40 minutes
Step 4: being taken out from net molding die after coagulation forming, using demoulding tooling, product is taken out from net molding die,
After cutting polishing molding running channel, it can completely be produced by drawing through a small amount of processing and not process or process on a small quantity and be electroplated, just
Stand-by package substrate is made.
In summary: first in mass ratio 45%~65%(of aluminium silicon carbide coarse powder particle size range D50>=120um), aluminium silicon carbide
Fine powder 15%~25%(particle size range D50≤ 60um), aluminium silicon carbide micro mist 8%~12%(particle size range D50≤ 15um), pore creating material
Starch 5%~12%, binder aluminium dihydrogen phosphate aqueous solution (content 9%~15%) are combined according to percent by volume.
The IGBT module of the aluminium silicon carbide for the high-volume fractional being prepared using this kind of method has heat with higher
Conductance (180 W/mK of >), and electronic chip majority is silicon materials, thermal expansion coefficient 4.1(10-6/ K) left and right, aluminium silicon carbide
The thermal expansion coefficient of material is also in 4-5(10-6/ K) or so, i.e., the IGBT module obtained by this kind of method can be controlled effectively
Deflection under high temperature reduces the generation of desoldering defect with silicon chip synchronous material.
And the result can by after welding chip carry out thermal cycling fatigue test report, x-ray detect hole ratio and
Substrate size camber variation, to verify.
In addition, it should be understood that although this specification is described in terms of embodiments, but not each embodiment is only wrapped
Containing an independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should
It considers the specification as a whole, the technical solutions in the various embodiments may also be suitably combined, forms those skilled in the art
The other embodiments being understood that.
Claims (8)
1. a kind of IGBT module of the aluminium silicon carbide of high-volume fractional, it is characterised in that: including 62~78% He of silicon carbide precast body
Alusil alloy 22~38%, the alusil alloy are immersed in the silicon carbide precast body, and the silicon carbide precast body is by aluminium
Silicon carbide coarse powder, aluminium silicon carbide fine powder, aluminium silicon carbide micro mist and binder are combined according to percent by volume.
2. a kind of IGBT module of aluminium silicon carbide and preparation method thereof of high-volume fractional according to claim 1, special
Sign is: the partial size of the aluminium silicon carbide coarse powder, the aluminium silicon carbide fine powder and the aluminium silicon carbide micro mist is respectively 120~
180um, 30~63um, 6~10um.
3. a kind of IGBT module of the aluminium silicon carbide of high-volume fractional according to claim 1, it is characterised in that: the carbon
The slurry formulation of SiClx precast body: 45%~65%(of aluminium silicon carbide coarse powder particle size range D in mass ratio50>=120um), aluminium silicon carbide
Fine powder 15%~25%(particle size range D50≤ 60um), aluminium silicon carbide micro mist 8%~12%(particle size range D50≤ 15um), pore creating material
Starch 5%~12%, binder aluminium dihydrogen phosphate aqueous solution (content 9%~15%).
4. a kind of preparation method of the IGBT module of the aluminium silicon carbide of high-volume fractional, it is characterised in that: the following steps are included:
S1: it is configured to the mixed slurry of net molding aluminium silicon carbide precast body；
S2: aluminium silicon carbide precast body dry pressure formed, that porous structure is prepared into through molding sintering is used；
S3: fusing aluminium alloy, preheating loads the net molding die of silicon carbide precast body, by molten aluminum pressure impregnation to porous silicon carbide
In precast body；
S4: after molding cooling to be solidified, being taken out from mold by product using demoulding tooling, do not process or process and be electroplated on a small quantity,
Just stand-by package substrate is made.
5. a kind of preparation method of the IGBT module of the aluminium silicon carbide of high-volume fractional according to claim 4, feature
Be: manufactured silicon carbide precast body is honeycomb setting in step S2.
6. a kind of preparation method of the IGBT module of the aluminium silicon carbide of high-volume fractional according to claim 4, feature
It is: prepares slurry in proportion, through mechanical stirring 6~10 hours, using two-way compression molding, 50~200MPa of briquetting pressure,
500 DEG C~650 DEG C are heated to 1.5~2.5 DEG C/min speed, keeps the temperature 1.5~3h, furnace cooling obtains the carbonization of porous structure
Silicon precast body, volume fraction 62%~78%.
7. a kind of preparation method of the IGBT module of the aluminium silicon carbide of high-volume fractional according to claim 4, feature
Be: the silicon carbide precast body processed being put into net mold for forming and tooling in step S3, mold be preheating to 500 DEG C~
It 800 DEG C, is kept the temperature after alusil alloy fusing.
8. a kind of preparation method of the IGBT module of the aluminium silicon carbide of high-volume fractional according to claim 4, feature
It is: applies 3~10MPa of air pressure after first vacuumizing in silicon carbide precast body in step S3, by molten aluminum pressure impregnation to mold
In aluminium silicon carbide in, pressing time 3~40 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201910643944.3A CN110323188B (en) | 2019-07-17 | 2019-07-17 | IGBT module of aluminium carborundum |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910643944.3A CN110323188B (en) | 2019-07-17 | 2019-07-17 | IGBT module of aluminium carborundum |
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| CN110323188B CN110323188B (en) | 2021-09-07 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112552052A (en) * | 2020-12-22 | 2021-03-26 | 珠海亿特立新材料有限公司 | Microwave-assisted silicon carbide porous ceramic, aluminum silicon carbide composite preparation method and aluminum silicon carbide composite |
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| CN102181753A (en) * | 2011-03-16 | 2011-09-14 | 西安明科微电子材料有限公司 | Silicon and silicon carbide hybrid enhanced aluminum-base composite material and preparation method thereof |
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| CN101092672A (en) * | 2007-07-19 | 2007-12-26 | 西安明科微电子材料有限公司 | Compositions of electronic package basal plate or outer shell material of aluminum silicon carbide with ultra low heat expansion, and method for preparing products |
| CN102140600A (en) * | 2011-03-16 | 2011-08-03 | 西安明科微电子材料有限公司 | Aluminum-silicon electronic packaging material and preparation method thereof |
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| CN112552052A (en) * | 2020-12-22 | 2021-03-26 | 珠海亿特立新材料有限公司 | Microwave-assisted silicon carbide porous ceramic, aluminum silicon carbide composite preparation method and aluminum silicon carbide composite |
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Effective date of registration: 20220830 Address after: 246000 Jingjiu Road, 1.3 square kilometers Development Industrial Park, Anqing Development Zone, Anhui Province Patentee after: Anhui Hansheng Industrial Parts Co.,Ltd. Address before: 246100 No. 17, Shipai Avenue, industrial park, Huaining County, Anqing City, Anhui Province Patentee before: Anhui Hansheng Vehicle Parts Co.,Ltd. |
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