CN110323055A - A kind of preparation facilities and preparation method of nanocrystalline product - Google Patents
A kind of preparation facilities and preparation method of nanocrystalline product Download PDFInfo
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- CN110323055A CN110323055A CN201910574064.5A CN201910574064A CN110323055A CN 110323055 A CN110323055 A CN 110323055A CN 201910574064 A CN201910574064 A CN 201910574064A CN 110323055 A CN110323055 A CN 110323055A
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- nanocrystalline
- release film
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21D—WORKING OR PROCESSING OF SHEET METAL OR METAL TUBES, RODS OR PROFILES WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21D28/00—Shaping by press-cutting; Perforating
- B21D28/02—Punching blanks or articles with or without obtaining scrap; Notching
- B21D28/06—Making more than one part out of the same blank; Scrapless working
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21D—WORKING OR PROCESSING OF SHEET METAL OR METAL TUBES, RODS OR PROFILES WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21D28/00—Shaping by press-cutting; Perforating
- B21D28/02—Punching blanks or articles with or without obtaining scrap; Notching
- B21D28/14—Dies
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/26—Methods of annealing
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/74—Methods of treatment in inert gas, controlled atmosphere, vacuum or pulverulent material
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D9/00—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor
- C21D9/52—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor for wires; for strips ; for rods of unlimited length
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
- H01F1/12—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials
- H01F1/14—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys
- H01F1/147—Alloys characterised by their composition
- H01F1/153—Amorphous metallic alloys, e.g. glassy metals
- H01F1/15333—Amorphous metallic alloys, e.g. glassy metals containing nanocrystallites, e.g. obtained by annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/0206—Manufacturing of magnetic cores by mechanical means
- H01F41/0233—Manufacturing of magnetic circuits made from sheets
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Thermal Sciences (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Dispersion Chemistry (AREA)
- Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
- Soft Magnetic Materials (AREA)
Abstract
The invention discloses the preparation facilities and preparation method of a kind of nanocrystalline product.Described device includes: conveying device, including material conveying device and release film transmission device；Stamping device, including at least 1 mold group, the set of molds include mutually matched 1 punch die and 1 bed die, and the punch die is punch-pin；The bed die is cavity plate, and the cavity plate is through-hole structure.The preparation method includes: to convey nanocrystalline strip by material conveying device, nanocrystalline strip is struck out a nanometer chip by the set of molds by stamping device, the nanometer chip is fallen through the through-hole of bed die to stick on the release film that lower section is conveyed by release film transmission device, obtain sticking on the nanocrystalline product being made of nanometer chip on release film, the nanocrystalline strip and release film move synchronously.The nanocrystalline product resistivity with higher and lower magnetic loss that preparation method provided by the invention obtains.
Description
Technical field
The invention belongs to the manufacturing technology fields of nanocrystalline product, and in particular to a kind of preparation dress of nanocrystalline product
It sets and preparation method.
Background technique
In power domain, with the maturing of high-frequency inversion technology, typical high power linear power supply starts largely high
Frequency Switching Power Supply is substituted, and in order to improve efficiency, reduces volume, the working frequency of Switching Power Supply is higher and higher, this is just right
More stringent requirements are proposed for soft magnetic materials therein, although ferrite high-frequency loss is low, at high-power aspect, there are still many
Problem can not reduce the volume of transformer first is that saturation magnetic strength is low；Second is that Curie temperature is low, thermal stability is poor；Third is that production is big
The yield rate of size iron core is low, at high cost.Amorphous nano-crystalline has high saturation magnetic induction and extremely low high-frequency loss, and heat simultaneously
Stablize, is the optimal selection of high power switching power supply soft magnetic materials.In electronic information field, with computer, network and
The rapid development of mechanics of communication, to small size, light weight, the demand of the Switching Power Supply and the network equipment of high reliability and low noise
It is growing, require it is higher and higher.For example, the working frequency of computer switching power supply from 20KHz in order to reduce volume to improve
To 500KHz；Low-voltage and high-current in order to realize CPU is stabilized the output voltage for electric current power supply mode using magnetic amplifier；For
Elimination various noises using the Spike-killers of the spontaneous interference of limiting circuitry, and inhibit the common mode and differential mode of Conduction Interference
Choke coil.A large amount of high-gradient magnetism device is increased in Switching Power Supply and interface equipment, by the nanocrystalline of special processing
Product can play excellent effect here.
The nanocrystalline product mainly produced by production methods such as slivers in existing production technology, can not expire
Foot performance requirement of the existing equipment to high-frequency low-consumption product in the market, it is therefore necessary to develop a kind of low damage of novel high-frequency
Consume the technical solution of nanocrystalline product.
CN107243610A discloses a kind of automatic rolling type nanocrystalline strip Preparation equipment, including a carrying device processed；Institute
The side for the carrying device processed stated is equipped with two sets of horizontal positioned parallel precisions and slides guide rail, and the parallel precision slides guide rail packet
Include that the first precision slides guide rail, the second precision slides guide rail, third precision slides guide rail；The third precision slides on guide rail
Equipped with the wrap-up that can be slided guide rail along third precision and move；The wrap-up includes winding base, winding motor, grabs
Take wheel；Design is equipped with electromagnetism grabbing device in the crawl wheel, and outside is additionally provided with winding core, is also built-in with Gao Ling on wireline reel
Sensitivity optoelectronic switch；The bottom of the winding base is additionally provided with the guide rail slide block for mobile rolling device.
CN104900383A discloses a kind of wireless charging single/multiple layer magnetic conduction sheet and preparation method thereof, the single layer magnetic conduction
Piece includes: one layer of magnetic flakes, a plurality of crackle is evenly distributed on the thin slice, and a plurality of crackle divides the thin slice
At multiple fragmentation cells；Dielectric is filled in the gap of a plurality of crackle, so that the fragmentation cell of the crackle two sides
Mutually insulated；Double-sided adhesive, wherein one side, the another side of the magnetic flakes for being adhered to the magnetic flakes are formed with by described
The protection film that dielectric is constituted.Preparation method include: heat treatment, adhered by double sided plaster, crazing processing, dipping process with
And baking and curing processing step.
CN107979966A discloses a kind of antifreeze plate and its preparation process applied to wireless charging and NFC, preparation
Technique includes: construction every magnetic cell: to have the soft magnetism band of the sheet structure there are two exposed surface as primitive, in the soft magnetic strip
One of exposed surface of material is bonded double-sided adhesive, and another exposed surface of the soft magnetism band is pressed into netted line
Road；Construct antifreeze plate.
But above-mentioned apparatus or product its magnetic loss of method preparation still have to be reduced, and resistivity is to be improved.Cause
This, preparation facilities and the preparation method for developing the nanocrystalline product of more excellent high-frequency low-consumption are significant to this field.
Summary of the invention
Aiming at the above shortcomings existing in the prior art, the purpose of the present invention is to provide a kind of preparations of nanocrystalline product
Device and preparation method.Device and method provided by the invention prepare that nanocrystalline product resistivity is high, magnetic loss is low, can be with
Meet market to high-frequency low-consumption strip product demand.
To achieve this purpose, the present invention adopts the following technical scheme:
In a first aspect, the present invention provides a kind of nanocrystalline product preparation facilities, described device includes:
Conveying device, including material conveying device and release film transmission device, the material conveying device for convey to
The nanocrystalline strip of processing；The release film transmission device is for conveying release film；The release film transmission device is located at material
Transmit the lower section of rotary device；
Stamping device, including at least 1 mold group, the set of molds include mutually matched 1 punch die and 1 bed die,
The punch die is punch-pin, positioned at the top of the nanocrystalline strip to be processed conveyed by material conveying device；The bed die is recessed
Mould, between the nanocrystalline strip to be processed of material conveying device conveying and the release film of release film transmission device conveying,
The cavity plate is through-hole structure, and the stamping device is used for the nanocrystalline strip punching press to be processed for conveying material conveying device
At nanometer chip, and described nanocrystalline is set to fall on the release film conveyed by release film transmission device；
In the present invention, the stamping device includes at least 1 mold group, such as 1 set, 2 sets, 3 sets, 4 sets, 5 sets or 6 sets
Deng.
In nanocrystalline product preparation facilities provided by the invention, the cavity plate (counterdie) is through-hole structure, it is ensured that convex
The nanometer chip that mould (punch die) stamps out can be leaked down by through-hole, be sticked on following release film.
In nanocrystalline product preparation facilities provided by the invention, a nanometer chip is stamped out by stamping device, and can make
Its close-packed arrays on release film obtains the nanocrystalline product of high resistivity.
It is used as currently preferred technical solution below, but not as the limitation to technical solution provided by the invention, leads to
Following preferred technical solution is crossed, can preferably reach and realize technical purpose and beneficial effect of the invention.
As the currently preferred technical solution of base, the tricks of the set of molds of the stamping device is 2-6 set, such as 2 sets,
3 sets, 4 sets, 5 sets or 6 sets, preferably 4 sets.Using multiple sets of molds group, can divide on the punch die and bed die of every suit set of molds
Less protrusion and through-hole are not set, the difficulty for opening up mold is reduced；But excessive set of molds will cause Sheet Metal Forming Technology excessively
It is very long, influence production efficiency.
Preferably, when the tricks of the set of molds of the stamping device is more than 1 set, each set of molds is filled along the material transmission
Set the direction arrangement of conveying nanocrystalline strip.
Preferably, when the tricks of the set of molds of the stamping device is more than 1 set, each set of molds to rush film size homogeneous
Together, the raised position of each punch die and the raised position of other punch dies do not have any coincidence.Here, the punch die size of each set of molds
It is all the same, the same position of each set of molds punching press nanocrystalline strip can be made, and then more efficiently use nanocrystalline strip.Each
The raised position of punch die and the raised position of other punch dies do not have any coincidence can guarantee will not be on nanocrystalline strip before
It is stamped fall position continue punching press and cause pneumatics, and the raised quantity on each punch die can be reduced in turn
Reduce the difficulty for opening up mold.
The punch die size of each set of molds can be as needed the size of nanocrystalline product be determined.
Preferably, the protrusion of the punch die is circular protrusions.
As currently preferred technical solution, the nanocrystalline product preparation facilities further includes rolling device, the roller
Pressure device includes roll-in axis, for obtained after punching press be located on the release film conveyed as release film transmission device described in receive
Rice chip carries out roll-in.
Roll-in is carried out with rolling device to the nanometer chip sticked on release film, mainly makes nanometer chip and release film
It well sticks, can be convenient subsequent treatment process, prevent sticking for the nanocrystalline product gone out and release film fortunately not subsequent
Obscission is generated in processing, while can also play the role of slight sliver.
Preferably, the roll-in axis of the rolling device includes upper roller last item and lower roll last item, the upper roller last item be located at by
The top of the release film of release film transmission device conveying, the lower roll last item are located at the release film conveyed by release film transmission device
Lower section.
Preferably, the roll-in axis driving motor of the rolling device is variable-frequency motor.Nothing can be carried out using variable-frequency motor
Pole speed regulation.
Preferably, the roll-in axis is external rubber-coated steel shaft.
Second aspect, the present invention, which provides, a kind of prepares nanocrystalline product with nanocrystalline product preparation facilities described in first aspect
Method, the described method comprises the following steps:
Nanocrystalline strip is conveyed by material conveying device, the set of molds by stamping device, which strikes out nanocrystalline strip, to be received
Rice chip, the nanometer chip is fallen through the through-hole of bed die to stick on the release film that lower section is conveyed by release film transmission device,
Obtain sticking on the nanocrystalline product being made of nanometer chip on release film, nanocrystalline strip fortune synchronous with release film
It is dynamic.
Nanocrystalline strip is washed into a nanometer chip through the stamping process and sticks on release film by preparation method provided by the invention
On, nanocrystalline product is obtained, nanocrystalline product resistivity with higher that preparation method through the invention obtains and lower
Magnetic loss.
In step (1), the nanocrystalline strip and release film move synchronously and refer to that nanocrystalline strip and release film are same at the same speed
To movement, guarantee that the relative position of nanocrystalline strip and release film is constant, in this way if with set of molds Multi-step forming, nanocrystalline band
The nanometer chip that material the same area stamps out every time during Multi-step forming can stick on the same corresponding region of release film,
This may be implemented for nanometer chip to be closely arranged in together, and being formed has product (the i.e. nanometer sheet phase for being uniformly distributed formula air gap
The product that gap between mutually distributes very evenly), help to promote nanocrystalline product resistivity, reduces its magnetic loss.
As currently preferred technical solution, the nanocrystalline strip is the nanocrystalline strip after fitting.
Preferably, the preparation method of the nanocrystalline strip after the fitting includes: in the upper of annealed nanocrystalline strip
One layer of double-sided adhesive without substrate is covered on surface, using the nanocrystalline strip as bottom, opens the isolation film of double-sided adhesive, then separately takes one
Piece nanocrystalline strip is attached on the double-sided adhesive opened as the second layer, is covered in the nanocrystalline strip upper surface of the second layer two-sided
Glue, and so on conform to the required nanocrystalline strip number of plies, the nanocrystalline strip after obtaining the fitting.
Preferably, the double-sided adhesive of the no substrate with a thickness of 0.005-0.01mm, such as 0.005mm, 0.007mm,
0.009mm or 0.01mm etc., it is not limited to cited numerical value, other interior unlisted numerical value of the numberical range are equally suitable
With.
Preferably, the method for the annealing is the following steps are included: by nanocrystalline original tape in the annealing for being full of protective gas
It is made annealing treatment in furnace, obtains the annealed nanocrystalline strip.
Preferably, the protective gas includes nitrogen.
Preferably, the temperature of the annealing is 520-580 DEG C, such as 520 DEG C, 530 DEG C, 540 DEG C, 550 DEG C, 560
DEG C, 570 DEG C or 580 DEG C etc., it is not limited to cited numerical value, other unlisted numerical value are equally suitable in the numberical range
With.
Preferably, the time of the annealing be 60-120min, such as 60min, 70min, 80min, 90min,
100min, 110min or 120min etc., it is not limited to cited numerical value, other interior unlisted numerical value of the numberical range
It is equally applicable.
As currently preferred technical solution, the punch die and bed die in the set of molds are according to required nanocrystalline product institute
The thickness and size needed is outputed.
As currently preferred technical solution, the tricks of the set of molds is 2-6 set, such as 2 sets, 3 sets, 4 sets, 5 sets
Or 6 sets, preferably 4 sets.
When the tricks of the set of molds is more than 1 set, each mold group conveys nanocrystalline band along the material conveying device
The directional spreding of material is on different station.
Preferably, when the tricks of the set of molds is more than 1 set, nanocrystalline strip is struck out to the method packet of nanometer chip
Include: after the nanocrystalline strip carries out punching press by one set of die group, nanocrystalline strip is conveyed by material conveying device again, is moved to
Next station carries out two times punch by another set of set of molds, and so on punching press Jing Guo all set of molds.
Nanocrystalline strip and release film are distributed under the drive of material conveying device and release film transmission device, a set of
After set of molds punching press, next station can be moved to automatically by another set of set of molds punching press.
When the tricks of the set of molds is more than 1 set, nanocrystalline strip will can just obtain nanocrystalline production by Multi-step forming
Product.
As currently preferred technical solution, the method also includes: it is sticked by the conveying of release film transmission device
The release film for stating nanocrystalline product enters rolling device, carries out roll-in to the nanocrystalline product, nanocrystalline after being rolled
Product.
Preferably, the roll-in axis of the rolling device rotates linear velocity as 0.8-1.2m/min, such as 0.8m/min,
0.9m/min, 1.0m/min, 1.1m/min or 1.2m/min etc., it is not limited to cited numerical value, in the numberical range
Other unlisted numerical value are equally applicable, preferably 1m/min.
As currently preferred technical solution, the method also includes: to the nanocrystalline product progress after the roll-in
Other shapes are wound or strike out, the nanocrystalline product finished.
As the further preferred technical solution of preparation method of the present invention, the described method comprises the following steps:
(1) nanocrystalline original tape is made annealing treatment in the annealing furnace full of protective gas, the temperature of annealing
It is 520-580 DEG C, time 60-120min obtains annealed nanocrystalline strip；
(2) one layer of double-sided adhesive without substrate is covered in the upper surface of step (1) the annealed nanocrystalline strip, this is received
Rice crystal zone material opens the isolation film of double-sided adhesive, then a piece of nanocrystalline strip is separately taken to be attached on the double-sided adhesive opened as bottom
As the second layer, double-sided adhesive is covered in the nanocrystalline strip upper surface of the second layer, and so on conform to required nanocrystalline band
The material number of plies, the nanocrystalline strip after obtaining the fitting；
(3) by the nanocrystalline strip after material conveying device supplying step (2) described fitting, by the mold of stamping device
Nanocrystalline strip after the fitting is struck out a nanometer chip by group, and the quantity of the set of molds is 4 sets, receiving after the fitting
It after rice crystal zone material carries out punching press by the 1st mold group, then is conveyed by material conveying device, is moved to next station by the 2nd set
Set of molds carries out two times punch, and so on punching press Jing Guo 4 mold groups, the nanometer chip that each punching press obtains is through bed die
Through-hole fall and stick on the release film that lower section is conveyed by release film transmission device, obtain sticking on release film by nanometer
The nanocrystalline product of chip composition, nanocrystalline strip and release film after the fitting move synchronously；
(4) rolling device is entered by the release film that the conveying of release film transmission device sticks the nanocrystalline product, to institute
It states nanocrystalline product and carries out roll-in, the roll-in axis rotation linear velocity of the rolling device is 1m/min, the nanometer after being rolled
Brilliant product；
(5) the nanocrystalline product after the roll-in that step (4) obtains is wound or is struck out other shapes, obtain
To the nanocrystalline product of finishing.
Compared with prior art, the invention has the following advantages:
(1) nanocrystalline product preparation facilities provided by the invention is automation linkage device, can be realized by conveying device
The automatic conveying of nanocrystalline strip and release film is obtained nanometer chip by way of punching press and forms nanocrystalline product, is suitable for
The nanocrystalline product of high-frequency low-consumption is prepared, continuous production can be carried out, and the device can be processed not by adjusting stamping die
With the product of dimensions.
(2) the nanocrystalline product that nanocrystalline product preparation method provided by the invention is prepared has high-saturation magnetic induction strong
Degree, high magnetic permeability, higher resistivity, good thermal stability and lower magnetic loss, saturation induction density is in 1.15T
More than, (magnetic conductivity imaginary part) is lost in 125kw/m 100 or more in magnetic conductivity3Hereinafter, resistivity is more than 578.06m Ω.
Detailed description of the invention
Fig. 1 is the structural schematic diagram for the nanocrystalline product preparation facilities that the embodiment of the present invention 1 provides；
The punch die of 4 mold groups of stamping device in the nanocrystalline product preparation facilities that Fig. 2 provides for the embodiment of the present invention 1
Appearance diagram；
Fig. 3 is after a punching press, two times punch, three times punching press and four punching presses, to stick in the embodiment of the present invention 1
The schematic diagram of nanometer chip on release film；
Wherein, 1- material conveying device, 2- release film transmission device, the first punch die of 301-, the second punch die of 302-, 303-
Three punch dies, the 4th punch die of 304-, 4- bed die, 5- rolling device, 6- nanocrystalline strip, 7- release film.
Specific embodiment
In order to better illustrate the present invention, it is easy to understand technical solution of the present invention, below further specifically to the present invention
It is bright.But following embodiments is only simple example of the invention, does not represent or limit the scope of the present invention, this hair
Bright protection scope is subject to claims.
The following are typical but non-limiting embodiments of the invention:
Embodiment 1
The present embodiment provides a kind of nanocrystalline product preparation facilities, the structure of the device is as shown in Figure 1.The present embodiment provides
Nanocrystalline product preparation facilities include:
Conveying device, including material conveying device 1 and release film transmission device 2, the material conveying device 1 is for conveying
Nanocrystalline strip 6 to be processed；The release film transmission device 2 is for conveying release film 7；The release film transmission device 2
In the lower section of material transmission rotary device 1.
Stamping device, including 4 mold groups, distribution (is passed along the material this 4 mold group from left to right in Fig. 1
The direction arrangement for sending device 1 to convey nanocrystalline strip 6), this 4 mold group includes mutually matched 1 punch die (i.e. in Fig. 1
The first punch die 301, the second punch die 302, third punch die 303 and the 4th punch die 304) and 1 bed die (i.e. bed die 4 in Fig. 1,
Bed die 4 include 4 bed dies, from left to right be respectively matched with corresponding punch die the first bed die, the second bed die, third bed die and
4th bed die, this 4 bed dies are joined together to form an entirety, unified in Fig. 1 to be indicated with bed die 4), the punch die is
Punch-pin, positioned at the top of the nanocrystalline strip 6 to be processed conveyed by material conveying device 1；The bed die is cavity plate, is located at object
Expect between the nanocrystalline strip 6 to be processed that transmission device 1 conveys and the release film 7 of the conveying of release film transmission device 2, it is described recessed
Mould is through-hole structure, and the nanocrystalline strip 6 to be processed that the stamping device is used to convey material conveying device 1, which strikes out, to be received
Rice chip, and make described nanocrystalline to fall on the release film 7 conveyed by release film transmission device 2.
Fig. 2 is the punch die appearance of 4 mold groups of stamping device in nanocrystalline product preparation facilities provided in this embodiment
Schematic diagram, the first punch die 301, the second punch die 302, third punch die 303 is identical with the size of the 4th punch die 304, but this 4 punchings
The raised position of circular protrusions on mould is different, and the raised position of each punch die and the raised position of other punch dies are not appointed
What is overlapped.
Rolling device 5, including roll-in axis, for release positioned at being conveyed by release film transmission device to what is obtained after punching press
The nanometer chip on film carries out roll-in.The roll-in axis of the rolling device includes upper roller last item and lower roll last item, it is described on
Roll-in axle position is located in the top of the release film conveyed by release film transmission device, the lower roll last item by release film transmission device
The lower section of the release film of conveying；The roll-in axis driving motor of rolling device is variable-frequency motor, and the roll-in axis is external cladding rubber
The steel shaft of glue.
The present embodiment, which additionally provides, a kind of prepares nanocrystalline method, the side using above-mentioned nanocrystalline product preparation facilities
Method the following steps are included:
(1) nanocrystalline original tape is made annealing treatment in the annealing furnace full of protective gas, the temperature of annealing
It is 550 DEG C, time 90min obtains annealed nanocrystalline strip；
(2) one layer of double-sided adhesive without substrate is covered in the upper surface of step (1) the annealed nanocrystalline strip, this is received
Rice crystal zone material opens the isolation film of double-sided adhesive, then a piece of nanocrystalline strip is separately taken to be attached on the double-sided adhesive opened as bottom
As the second layer, double-sided adhesive is covered in the nanocrystalline strip upper surface of the second layer, and so on is bonded the nanocrystalline band at 4 layers
Material, the nanocrystalline strip 6 after obtaining the fitting；
(3) nanocrystalline strip 6 is conveyed by material conveying device 1, rushes nanocrystalline strip by the set of molds of stamping device
It is pressed into a nanometer chip, the quantity of the set of molds is 4 sets, after the nanocrystalline strip carries out punching press by the 1st mold group, then by
Material conveying device 1 drives nanocrystalline strip 6 to be moved to next station and carries out two times punch by the 2nd mold group, with such
Push away the punching press by 4 mold groups, through-hole of the nanometer chip that each punching press obtains through bed die 4 fall stick on lower section by from
On the release film 7 that type film transmission device 2 conveys, obtain sticking on the nanocrystalline product being made of nanometer chip on release film,
The nanocrystalline strip and release film move synchronously；
(4) rolling device is entered by the release film that the conveying of release film transmission device sticks the nanocrystalline product, to institute
It states nanocrystalline product and carries out roll-in, the roll-in axis rotation linear velocity of the rolling device is 1m/min, the nanometer after being rolled
Brilliant product；
(5) the nanocrystalline product after the roll-in that step (4) obtains is wound or is struck out other shapes, obtain
To the nanocrystalline product of finishing.
In this implementation steps (3), each time after punching press, the schematic diagram of the obtained nanometer chip sticked on release film is such as
Shown in Fig. 3, in figure from left to right be respectively after a punching press, two times punch, three times punching press and four punching presses, stick on from
The schematic diagram of nanometer chip on type film, it can be seen that with increasing for punching press number, the arrangement of nanometer chip is more and more closer,
The figure of the rightmost side Fig. 3 is the schematic diagram of the nanocrystalline product obtained after 4 punching presses, and a nanometer chip is arranged closely in one
It rises, has and be uniformly distributed formula air gap.
The nanocrystalline original tape processing of 128KHz a kind of is prepared into nanocrystalline product according to the method for the present embodiment, to nanometer
Its performance of brilliant product test, the result is shown in tables 1.
Embodiment 2
The nanocrystalline product preparation facilities of the present embodiment is same as Example 1.
The nanocrystalline product preparation method of the present embodiment the difference from embodiment 1 is that, in step (1), annealing
Temperature is 520 DEG C, and the time of annealing is 60min；In step (4), the roll-in axis rotation linear velocity of the rolling device is
0.8m/min。
The processing of the nanocrystalline original tape of 128KHz same as Example 1 is prepared into according to the method for the present embodiment nanocrystalline
Product, to its performance of nanocrystalline product test, the result is shown in tables 1.
Embodiment 3
The nanocrystalline product preparation facilities of the present embodiment is same as Example 1.
The nanocrystalline product preparation method of the present embodiment the difference from embodiment 1 is that, in step (1), annealing
Temperature is 580 DEG C, and the time of annealing is 120min；In step (4), the roll-in axis rotation linear velocity of the rolling device is
1.2m/min。
The processing of the nanocrystalline original tape of 128KHz same as Example 1 is prepared into according to the method for the present embodiment nanocrystalline
Product, to its performance of nanocrystalline product test, the result is shown in tables 1.
Embodiment 4
The nanocrystalline product preparation facilities of the present embodiment is referring to embodiment 1, and difference is, stamping device only includes 2 cover dies
Tool group, i.e. only 2 punch dies (the first punch die 301, the second punch die 302) and bed die 4 (include 2 bed dies, are respectively from left to right
The first bed die and the second bed die matched with corresponding punch die).
The nanocrystalline product preparation method reference implementation example 1 of the present embodiment, difference is, 2 cover dies are only passed through in step (3)
The punching press of tool group obtains the nanocrystalline product being made of nanometer chip.
The processing of the nanocrystalline original tape of 128KHz same as Example 1 is prepared into according to the method for the present embodiment nanocrystalline
Product, to its performance of nanocrystalline product test, the result is shown in tables 1.
Embodiment 5
Referring to embodiment 1, difference is the nanocrystalline product preparation facilities of the present embodiment, and stamping device includes 6 molds
Group, that is, the bed die for sharing 6 punch dies and matching with above-mentioned punch die, the raised position on punch die, which is adjusted, makes each punch die
Raised position and the raised position of other punch dies do not have any coincidence.
The nanocrystalline product preparation method reference implementation example 1 of the present embodiment, difference is, 6 molds are passed through in step (3)
The punching press of group obtains the nanocrystalline product being made of nanometer chip.
The processing of the nanocrystalline original tape of 128KHz same as Example 1 is prepared into according to the method for the present embodiment nanocrystalline
Product, to its performance of nanocrystalline product test, the result is shown in tables 1.
Comparative example 1
Referring to embodiment 1, difference is the specific preparation method of the nanocrystalline product of this comparative example, provides without using the present invention
Preparation facilities carry out nanocrystalline product preparation, but prepared using traditional sliver apparatus, without in embodiment 1
The operation of step (3) and step (4), but nanocrystalline sliver is carried out, specific splinter method is referred to CN104900383A
Method.The nanocrystalline original tape that this comparative example uses is identical as the nanocrystalline original tape of embodiment 1.
The processing of the nanocrystalline original tape of 128KHz same as Example 1 is prepared into according to the method for this comparative example nanocrystalline
Product, to its performance of nanocrystalline product test, the result is shown in tables 1.
Test method
To the nanocrystalline product that each embodiment and comparative example obtain, using SY-8218 instrument and 128KHz, 160A/M
With 25 DEG C of test conditions, saturation induction density is tested；Using SY-8218 instrument and 100KHz/100MT and 25 DEG C of test-strips
Part tests magnetic conductivity；Using SY-8218 instrument and 100KHz/100MT and 25 DEG C of test condition, test loss.It is visited using four
Skill of handling needles test resistance rate, test current strength are 5mA.
Table 1
Based on the above embodiments with comparative example it is found that the nanocrystalline product preparation facilities that 1-5 of the embodiment of the present invention is provided is
Linkage device is automated, the automatic conveying of nanocrystalline strip and release film can be realized by conveying device, by way of punching press
Continuous production can be carried out suitable for preparing the nanocrystalline product of high-frequency low-consumption by obtaining nanometer nanocrystalline product of chip composition.Pass through
By the technique of punching press in nanocrystalline product preparation method, nanocrystalline strip is washed into a nanometer chip and is sticked on release film, is obtained
To nanocrystalline product.In embodiment 1-5, with set of molds Multi-step forming, since nanocrystalline strip and release film move synchronously, nanometer
The nanometer chip that crystal zone material the same area stamps out every time during Multi-step forming can stick on the same corresponding of release film
Region, this may be implemented for nanometer chip to be closely arranged in together, and being formed has the product for being uniformly distributed formula air gap, facilitates
Nanocrystalline product resistivity is promoted, its magnetic loss is reduced.The nanocrystalline product magnetic conductivity real part that above-described embodiment is prepared down to
100, magnetic conductivity is lower, and magnetic loss is few, and resistivity is higher.
Comparative example 1 is using traditional sliver scheme, because traditional sliver is in irregular shape, splits fragment size out not
One, the nanocrystalline properties of product that distributed non-uniform air-gap causes its product to use process for stamping to obtain relative to embodiment 1-5
Difference.
The Applicant declares that the present invention is explained by the above embodiments detailed process equipment and process flow of the invention,
But the present invention is not limited to the above detailed process equipment and process flow, that is, it is above-mentioned detailed not mean that the present invention must rely on
Process equipment and process flow could be implemented.It should be clear to those skilled in the art, any improvement in the present invention,
Addition, selection of concrete mode of equivalence replacement and auxiliary element to each raw material of product of the present invention etc., all fall within of the invention
Within protection scope and the open scope.
Claims (10)
1. a kind of nanocrystalline product preparation facilities, which is characterized in that described device includes:
Conveying device, including material conveying device and release film transmission device, the material conveying device are to be processed for conveying
Nanocrystalline strip；The release film transmission device is for conveying release film；The release film transmission device is located at material transmission
The lower section of rotary device；
Stamping device, including at least 1 mold group, the set of molds include mutually matched 1 punch die and 1 bed die, described
Punch die is punch-pin, positioned at the top of the nanocrystalline strip to be processed conveyed by material conveying device；The bed die is cavity plate, position
It is described recessed between the nanocrystalline strip to be processed of material conveying device conveying and the release film of release film transmission device conveying
Mould is through-hole structure, and the nanocrystalline strip to be processed that the stamping device is used to convey material conveying device strikes out nanometer
Chip, and make described nanocrystalline to fall on the release film conveyed by release film transmission device.
2. nanocrystalline product preparation facilities according to claim 1, which is characterized in that the set of molds of the stamping device
Tricks is that 2-6 covers, preferably 4 sets；
Preferably, when the tricks of the set of molds of the stamping device is more than 1 set, each set of molds is defeated along the material conveying device
The direction of nanocrystalline strip is sent to arrange；
Preferably, when the tricks of the set of molds of the stamping device is more than 1 set, each set of molds to rush film size all the same, often
The raised position of a punch die and the raised position of other punch dies do not have any coincidence；
Preferably, the protrusion of the punch die is circular protrusions.
3. nanocrystalline product preparation facilities according to claim 1, which is characterized in that the nanocrystalline product preparation facilities
It further include rolling device, the rolling device includes roll-in axis, for being located to what is obtained after punching press by release film transmission device
The nanometer chip on the release film of conveying carries out roll-in；
Preferably, the roll-in axis of the rolling device includes upper roller last item and lower roll last item, and the upper roller last item is located at by release
The top of the release film of film transmission device conveying, the lower roll last item are located under the release film conveyed by release film transmission device
Side；
Preferably, the roll-in axis driving motor of the rolling device is variable-frequency motor；
Preferably, the roll-in axis is external rubber-coated steel shaft.
4. a kind of method for preparing nanocrystalline product with any one of the claim 1-3 nanocrystalline product preparation facilities, special
Sign is, the described method comprises the following steps:
Nanocrystalline strip is conveyed by material conveying device, the set of molds by stamping device strikes out nanocrystalline strip nanocrystalline
Piece, the nanometer chip is fallen through the through-hole of bed die to stick on the release film that lower section is conveyed by release film transmission device, obtains
The nanocrystalline product being made of nanometer chip on release film is sticked on, the nanocrystalline strip and release film move synchronously.
5. according to the method described in claim 4, it is characterized in that, the nanocrystalline strip is the nanocrystalline strip after fitting；
Preferably, the preparation method of the nanocrystalline strip after the fitting includes: in the upper surface of annealed nanocrystalline strip
One layer of double-sided adhesive without substrate is covered, using the nanocrystalline strip as bottom, the isolation film of double-sided adhesive is opened, then separately takes a piece of receive
Rice crystal zone material is attached on the double-sided adhesive opened as the second layer, is covered with double-sided adhesive in the nanocrystalline strip upper surface of the second layer, according to
This, which analogizes, conforms to the required nanocrystalline strip number of plies, the nanocrystalline strip after obtaining the fitting；
Preferably, the double-sided adhesive of the no substrate with a thickness of 0.005-0.01mm；
Preferably, the method for the annealing is the following steps are included: by nanocrystalline original tape in the annealing furnace full of protective gas
It is made annealing treatment, obtains the annealed nanocrystalline strip；
Preferably, the protective gas includes nitrogen；
Preferably, the temperature of the annealing is 520-580 DEG C；
Preferably, the time of the annealing is 60-120min.
6. method according to claim 4 or 5, which is characterized in that the punch die and bed die in the set of molds are according to needed for
Thickness needed for nanocrystalline product and size are outputed.
7. according to the described in any item methods of claim 4-6, which is characterized in that the tricks of the set of molds is 2-6 set, preferably
It is 4 sets；
Preferably, in step (1), when the tricks of the set of molds is more than 1 set, nanocrystalline strip is struck out into nanometer chip
Method includes: after the nanocrystalline strip carries out punching press by one set of die group, and nanocrystalline strip is conveyed by material conveying device again,
Be moved to next station and two times punch carried out by another set of set of molds, and so on punching press Jing Guo all set of molds.
8. according to the described in any item methods of claim 4-7, which is characterized in that the method also includes: it is transmitted by release film
The release film that device conveying sticks the nanocrystalline product enters rolling device, carries out roll-in to the nanocrystalline product, obtains
Nanocrystalline product after to roll-in；
Preferably, the roll-in axis rotation linear velocity of the rolling device is 0.8-1.2m/min, preferably 1m/min.
9. according to the described in any item methods of claim 8, which is characterized in that the method also includes: after the roll-in
Nanocrystalline product is wound or strikes out other shapes, the nanocrystalline product finished.
10. according to the described in any item methods of claim 4-9, which is characterized in that the described method comprises the following steps:
(1) nanocrystalline original tape is made annealing treatment in the annealing furnace full of protective gas, the temperature of annealing is
520-580 DEG C, time 60-120min obtains annealed nanocrystalline strip；
(2) one layer of double-sided adhesive without substrate is covered in the upper surface of step (1) the annealed nanocrystalline strip, this is nanocrystalline
Band opens the isolation film of double-sided adhesive as bottom, then a piece of nanocrystalline strip is separately taken to be attached to conduct on the double-sided adhesive opened
The second layer is covered with double-sided adhesive in the nanocrystalline strip upper surface of the second layer, and so on conform to required nanocrystalline strip layer
Number, the nanocrystalline strip after obtaining the fitting；
(3) by the nanocrystalline strip after material conveying device supplying step (2) described fitting, the set of molds by stamping device will
Nanocrystalline strip after the fitting strikes out a nanometer chip, and the quantity of the set of molds is 4 sets, nanocrystalline after the fitting
It after band carries out punching press by the 1st mold group, then is conveyed by material conveying device, is moved to next station by the 2nd mold
Group carries out two times punch, and so on punching press Jing Guo 4 mold groups, the nanometer chip that each punching press obtains leading to through bed die
Hole, which is fallen, to stick on the release film that lower section is conveyed by release film transmission device, obtain sticking on release film by nanometer chip
The nanocrystalline product of composition, nanocrystalline strip and release film after the fitting move synchronously；
(4) rolling device is entered by the release film that the conveying of release film transmission device sticks the nanocrystalline product, is received to described
The brilliant product of rice carries out roll-in, and the roll-in axis rotation linear velocity of the rolling device is 1m/min, the nanocrystalline production after being rolled
Product；
(5) the nanocrystalline product after the roll-in that step (4) obtains is wound or is struck out other shapes, obtain essence
The nanocrystalline product of processing.
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