CN110317309A - Memristor and preparation method thereof based on two-dimensional polymer film - Google Patents
Memristor and preparation method thereof based on two-dimensional polymer film Download PDFInfo
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- CN110317309A CN110317309A CN201810278806.5A CN201810278806A CN110317309A CN 110317309 A CN110317309 A CN 110317309A CN 201810278806 A CN201810278806 A CN 201810278806A CN 110317309 A CN110317309 A CN 110317309A
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- polymer film
- dimensional polymer
- fragrance
- aldehyde
- memristor
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- 229920006254 polymer film Polymers 0.000 title claims abstract description 95
- 238000002360 preparation method Methods 0.000 title claims abstract description 34
- 125000002485 formyl group Chemical class [H]C(*)=O 0.000 claims abstract description 55
- 125000003118 aryl group Chemical group 0.000 claims abstract description 54
- 239000003205 fragrance Substances 0.000 claims abstract description 54
- 239000011259 mixed solution Substances 0.000 claims abstract description 54
- 239000003960 organic solvent Substances 0.000 claims abstract description 39
- 239000007788 liquid Substances 0.000 claims abstract description 13
- 239000000243 solution Substances 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 40
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 23
- 229910052709 silver Inorganic materials 0.000 claims description 23
- 239000004332 silver Substances 0.000 claims description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 19
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 18
- 239000000126 substance Substances 0.000 claims description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 17
- 229910052802 copper Inorganic materials 0.000 claims description 17
- 239000010949 copper Substances 0.000 claims description 17
- 150000007524 organic acids Chemical class 0.000 claims description 15
- 239000008367 deionised water Substances 0.000 claims description 12
- 229910021641 deionized water Inorganic materials 0.000 claims description 12
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 11
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical group CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 9
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Substances ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 7
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 claims description 6
- 238000001291 vacuum drying Methods 0.000 claims description 6
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000003153 chemical reaction reagent Substances 0.000 claims description 5
- MVPPADPHJFYWMZ-IDEBNGHGSA-N chlorobenzene Chemical group Cl[13C]1=[13CH][13CH]=[13CH][13CH]=[13CH]1 MVPPADPHJFYWMZ-IDEBNGHGSA-N 0.000 claims description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 3
- 150000004816 dichlorobenzenes Chemical group 0.000 claims description 3
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 claims description 3
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 3
- 239000012498 ultrapure water Substances 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 125000003368 amide group Chemical group 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims 1
- 229920000642 polymer Polymers 0.000 abstract description 17
- 239000000178 monomer Substances 0.000 abstract description 11
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 239000010409 thin film Substances 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 36
- 239000000463 material Substances 0.000 description 29
- 239000010408 film Substances 0.000 description 14
- 230000014759 maintenance of location Effects 0.000 description 14
- 230000008569 process Effects 0.000 description 12
- 238000005303 weighing Methods 0.000 description 11
- 238000012360 testing method Methods 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
- 239000011521 glass Substances 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 238000006116 polymerization reaction Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 229910021389 graphene Inorganic materials 0.000 description 4
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical group NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- NXUBVBMQRSLBHQ-UHFFFAOYSA-N O1OOCC=C1.C1=CC=CC=C1 Chemical compound O1OOCC=C1.C1=CC=CC=C1 NXUBVBMQRSLBHQ-UHFFFAOYSA-N 0.000 description 3
- 239000002262 Schiff base Substances 0.000 description 3
- 150000004753 Schiff bases Chemical class 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 229920000768 polyamine Polymers 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 238000000919 Fourier transform infrared map Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000013310 covalent-organic framework Substances 0.000 description 2
- 229960001760 dimethyl sulfoxide Drugs 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000002336 sorption--desorption measurement Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000013112 stability test Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000013473 2D covalent-organic framework Substances 0.000 description 1
- 238000003775 Density Functional Theory Methods 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229940126678 chinese medicines Drugs 0.000 description 1
- NEHMKBQYUWJMIP-UHFFFAOYSA-N chloromethane Chemical class ClC NEHMKBQYUWJMIP-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000000763 evoking effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 238000000399 optical microscopy Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G12/00—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen
- C08G12/02—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes
- C08G12/04—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes with acyclic or carbocyclic compounds
- C08G12/06—Amines
- C08G12/08—Amines aromatic
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2361/00—Characterised by the use of condensation polymers of aldehydes or ketones; Derivatives of such polymers
- C08J2361/20—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen
- C08J2361/22—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes with acyclic or carbocyclic compounds
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
Abstract
The invention discloses a kind of memristor and preparation method thereof based on two-dimensional polymer film, preparation method, the following steps are included: being added dropwise the more aldehyde mixed solutions of fragrance on the liquid level of aromatic multi-amine mixed solution, the aromatics organic solvent B volatilization placed at 20~25 DEG C of room temperature into the more aldehyde mixed solutions of fragrance finishes, and two-dimensional polymer film is obtained on liquid level.The present invention prepares covalently organic two-dimentional polymer thin film using the more aldehyde of fragrance and aromatic multi-amine as reaction monomers for the first time, provides the growth conditions for preparing covalently organic two-dimensional polymer.The preparation method simple economy, the instrument of high-end precision is not needed, the uniform two-dimensional polymer film of large area can be obtained without providing high-energy, and the adjusting to two-dimensional polymer film thickness is reached by the adjusting to amount of monomer, be suitble to the demand of actual production.
Description
Technical field
The invention belongs to organic two-dimensional material technical fields, relate in particular to a kind of recalling based on two-dimensional polymer film
Hinder device and preparation method thereof.
Background technique
The lateral dimension of two-dimensional material is greater than 100nm or even several microns of even greater laminated structures, but thickness is only single
Atom or several atomic thickness (usually less than 5 nanometers) are a kind of high score of the inside with region repetitive unit, periodic structure
Sub- material.In two-dimensional material, electronics is limited in two dimensions, to obtain unprecedented physics, electronics and chemistry
Property.The two-dimensional material being originally found is the graphene being stripped out from graphite.Graphene is as a kind of monoatomic layer thickness
Two-dimensional material, be by sp2The hexagonal honeycomb shape lattice of the carbon atom composition of hydridization is constituted, the big π formed based on this structure
Conjugated system is with excellent electron-transport, optics, machinery and heating conduction.The discovery of these excellent properties of graphene,
Researchers are evoked from atom or the interest of molecular level design and rational and synthesizing new two-dimension polymer.
Further exploration after study, it was found that the covalent organic grid material (2D COFs) of two dimension.This material by
Organic structure ele is with the New Two Dimensional material made of covalent linkage, with periodic structure and single structure element thickness.
The monomer that the material is made of C, H, O, N these " light elements " is formed highly stable by covalent bond stronger between atom
Porosity nano material.Therefore can be reached by the adjusting to monomer type and position to two-dimensional polymer function
The regulation of energy.Similar with graphene, traditional two-dimensional polymer is to remove covalent organic frame using the method for " from top to bottom "
Material (COF) obtains.Due to the organic size of grid framework material (COFs) of two dimension itself, greatly limit monatomic
The area of thickness degree two dimension monocrystal material, so that two-dimensional material be made to be difficult to meet the requirement of nano electron device.And another
" from bottom to top " method is also often used in the preparation of two-dimensional material.This method is first by monomer deposition appropriate
Then substrate material surface gives certain environmental stimuli, prepare two-dimensional polymer by surface reaction.It is this to be made on interface
The two dimension that the method for standby two-dimensional material can make full use of the catalytic activity of substrate and the effect of Van der Waals extension to prepare single layer is poly-
Object is closed, and is possible to obtain the monolayer material of large area.But this method generally requires some exacting terms, such as high
Temperature, ultra-high vacuum environment etc. can just promote the generation of reaction.In addition to this, there is hardly possiblies to turn for the two-dimensional material that this method obtains
The problem of shifting.Whether the two-dimensional material of method preparation " from top to bottom " or " from bottom to top ", in size and properties
All it is difficult meet the needs of practical application.
Summary of the invention
In view of the deficiencies of the prior art, the purpose of the present invention is to provide a kind of memristors based on two-dimensional polymer film
Device, the preparation method of the two-dimensional polymer film are based on interface method, ultra-thin can closely prepare in atmospheric environment at room temperature
Two-dimensional polymer film passes through concentration and the mole (ratio of fragrance more aldehyde and aromatic multi-amine of change monomer during the preparation process
Example) method the two-dimensional polymer film of different-thickness can be obtained.The two-dimensional polymer that preparation method obtains through the invention
Film, which can according to need, to be transferred in any required substrate, and the electronic device (memristor) for constructing different structure is conducive to.
The purpose of the present invention is what is be achieved by following technical proposals.
A kind of preparation method of two-dimensional polymer film, comprising the following steps:
The more aldehyde mixed solutions of fragrance are added dropwise on the liquid level of aromatic multi-amine mixed solution, are placed at 20~25 DEG C of room temperature
It is finished to the aromatics organic solvent B volatilization in the more aldehyde mixed solutions of the fragrance, two-dimensional polymer film is obtained on liquid level,
Wherein,
The more aldehyde of fragrance in the more aldehyde mixed solutions of fragrance and the aromatic multi-amine in the aromatic multi-amine mixed solution
The ratio (0.0015~0.005) of the amount of substance: 0.01389；
The configuration method of the aromatic multi-amine mixed solution are as follows: aromatic multi-amine is evenly distributed in organic solvent A, is obtained
Deionized water is added in the solution A and uniformly mixes, obtains the aromatic multi-amine mixed solution of light brown for solution A, wherein
The concentration of aromatic multi-amine is 0.185~4.63mmol/mL in the solution A, and the organic solvent A is aprotic and mutual with water
Molten organic reagent；
The configuration method of the more aldehyde mixed solutions of fragrance are as follows: the more aldehyde of fragrance are evenly distributed on aromatics organic solvent B
In, solution B is obtained, organic acid is added in the solution B, obtains the more aldehyde mixed solutions of fragrance, wherein the aromatics are organic
The ratio of the amount number of the substance of the volume parts of solvent B and the more aldehyde of fragrance is (0.5~1): (0.0008~0.01), described
The volume of organic acid is the 0.7~1.5% of the volume of the solution B；
The organic acid is acetic acid, trifluoroacetic acid or trifluoromethanesulfonic acid；
Aromatics organic solvent B is chlorobenzene, dichloro-benzenes or toluene.
In the above-mentioned technical solutions, the organic solvent A is n,N-Dimethylformamide, n,N-dimethylacetamide or two
Methyl sulfoxide.
In the above-mentioned technical solutions, aromatics organic solvent B of the placement into the more aldehyde mixed solutions of the fragrance is waved
Distributing the complete time is at least 24 hours.
In the above-mentioned technical solutions, in the aromatic multi-amine mixed solution, the volume parts of the deionized water and institute
The ratio for stating the amount number of the substance of aromatic multi-amine is 1:(0.005~0.03).
In the above-mentioned technical solutions, the unit of the volume parts is mL, and the unit of a mass fraction is
Mg, the unit of the amount number of a substance are mmol.
In the above-mentioned technical solutions, the more aldehyde of fragrance include two or 2 or more aldehyde radicals.
In the above-mentioned technical solutions, the aromatic multi-amine includes two or 2 or more amidos.
In the above-mentioned technical solutions, the deionized water is ultrapure water, and resistivity is 18.2M Ω ﹒ cm.
The two-dimensional polymer film that above-mentioned preparation method obtains.
In the above-mentioned technical solutions, the two-dimensional polymer film with a thickness of 2~80nm.
The memristor that above-mentioned two-dimensional polymer film is obtained as active layer.
In the above-mentioned technical solutions, the memristor is from top to bottom successively are as follows: active electrode, two-dimensional polymer film and lazy
Property electrode, the active electrode be aluminium layer, layers of copper or silver layer；The inert electrode is ITO conductive glass layer, layer gold or platinum layer.
In the above-mentioned technical solutions, the active electrode with a thickness of 10~200nm.
The preparation method of above-mentioned memristor, comprising the following steps:
A) the two-dimensional polymer film is transferred to the upper surface of inert electrode, in a vacuum drying oven in 15~40 DEG C
2~10h of lower vacuum drying；
B) active electrode is deposited on the two-dimensional polymer film.
In the step b), when the active electrode is silver layer, method that the silver layer is deposited are as follows: use copper mesh as
Mask plate is attached to the upper surface of the two-dimensional polymer film, withRate deposition thickness be 20~100nm silver
Layer, the copper mesh is removed after deposition, completes vapor deposition silver layer.
In the above-mentioned technical solutions, the mesh number of the copper mesh is 200~300 mesh.
Application of the above-mentioned two-dimensional polymer film as active layer in memristor.
Compared with the prior art, two-dimensional polymer film of the invention has the beneficial effect that
1, it is thin to prepare covalently organic two dimension polymerization using the more aldehyde of fragrance and aromatic multi-amine as reaction monomers for the first time by the present invention
Film provides the growth conditions for preparing covalently organic two-dimensional polymer.The preparation method simple economy does not need high-end precision
Instrument can be obtained the uniform two-dimensional polymer film of large area without providing high-energy, and pass through the adjusting to amount of monomer
Reach the adjusting to two-dimensional polymer film thickness, is suitble to the demand of actual production.
2, the present invention proposes to prepare covalently organic two-dimensional polymer film at water-air interface using solution epitaxy, together
When the characteristics of being connected by two kinds of monomer covalents, uniform cavernous structure can not only be provided, while also making the material a variety of
Stable presence in organic solvent and water.Pass through the film that the methods of spin coating, droplet casting obtain compared to one-dimensional Polymers, which removes
Have outside uniform cavernous structure, also there is good solvent resistance, expanded the application places of material.
3, the present invention proposes that preparing covalently organic two-dimensional polymer film at water-air interface using solution epitaxy is presented
Unformed state out, the characteristics of making the two-dimensional polymer film show flexible self-supporting.
4, the present invention is provided for the first time using two-dimensional polymer film as the memristor of functional layer, by the porous knot of the material
Structure prepares the memristor based on conductive filament principle using active electrode.What it is due to two-dimensional polymer film of the present invention is in gas-liquid
It is prepared on interface, so very convenient be transferred in any substrate, other materials are by inorganic vapor deposition, spin coating etc.
Method is transferred in substrate, our method has convenient and easy-operating advantage by comparison, and can be transferred to institute
In any substrate needed.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of memristor of the invention；
Fig. 2 be two-dimensional polymer film of the invention 10 μ m, 10 μ m atomic force microscope characterize pattern, 2
(a) in two-dimensional polymer film with a thickness of 20nm, in 2 (b) two-dimensional polymer film with a thickness of 50nm, two dimension is poly- in 2 (c)
Close object film with a thickness of 70nm；
Fig. 3 is the curve of unlatching and the erasing of memristor of the invention (using the two-dimensional polymer film of 20nm thickness)；
Fig. 4 is the statistics of the cyclical stability of memristor of the invention (using the two-dimensional polymer film of 20nm thickness)；
Fig. 5 is the statistics of the high low resistance state of different components (using the two-dimensional polymer film of 20nm thickness)；
Fig. 6 is to be read the memristor obtained retention time of the present invention (to polymerize using the thick two dimension of 20nm with 0.1V voltage
Object film)；
Fig. 7 is the curve of unlatching and the erasing of memristor of the invention (using the two-dimensional polymer film of 50nm thickness)；
Fig. 8 is the statistics of the cyclical stability of memristor of the invention (using the two-dimensional polymer film of 5 0nm thickness)；
Fig. 9 is the statistics of the high low resistance state of different components (using the two-dimensional polymer film of 50nm thickness)；
Figure 10 is to be read the memristor obtained retention time of the present invention (to polymerize using the thick two dimension of 50nm with 0.1V voltage
Object film)；
Figure 11 is the curve of unlatching and the erasing of memristor of the invention (using the two-dimensional polymer film of 70nm thickness)；
Figure 12 is the statistics of the cyclical stability of memristor of the invention (using the two-dimensional polymer film of 70nm thickness)；
Figure 13 is the statistics of the high low resistance state of different components (using the two-dimensional polymer film of 70nm thickness)；
Figure 14 is to be read the memristor obtained retention time of the present invention (to polymerize using the thick two dimension of 70nm with 0.1V voltage
Object film)；
Figure 15 is nitrogen adsorption/desorption curve of two-dimensional polymer film；
Figure 16 is the graph of pore diameter distribution of two-dimensional polymer film；
Figure 17 is the Fourier transform infrared map of two-dimensional polymer film of the invention；
Figure 18 is the high resolution transmission electron microscopy picture for the two-dimensional polymer film that embodiment 2 is prepared；
Figure 19 is the image of the selective electron diffraction for the two-dimensional polymer film that embodiment 2 is prepared.
Specific embodiment
In a specific embodiment of the invention, related instrument is as follows:
Atomic force microscope model: German Bruker Dimension Icon ScanAsyst, when atomic force microscope is tested
Using tapping mode, what probe was selected is Brooker VSEP-2A type needle point.
Optical microscopy model: karr Zeiss Axio Scope A1 pol
Electrical testing probe station property: South Korea Ecopia EPS-1000
Semiconductor property tester: Shanghai carries moral EPS-300, when testing device performance using semiconductor property tester,
ITO ground connection, applies voltage, step-length 0.02V on Ag electrode.In device property figure, 1 refers to applying voltage from 0V-1.5V
The curve of scanning process, 2 refer to applying the curve that voltage is scanned from 1.5-0V, and 3 refer to that apply voltage scans from 0-3.3V
The curve of appearance, 4 refer to applying the curve that voltage occurs from 3.3-0V scanning.
BET test: JB-2020 type specific-surface area detection instrument, when BET is tested, 200 DEG C of activation, 77K test.
The purchase source of involved drug are as follows:
Agents useful for same is all purchased from Chinese medicines group, and purity is that analysis is pure.
In the following embodiments, the unit of a volume parts is mL, and the unit of a mass fraction is mg, a substance
Amount number unit be mmol.Deionized water is ultrapure water, and resistivity is 18.2M Ω ﹒ cm.
In the inventive solutions, reaction vessel can be surface plate, weighing bottle, culture dish, glass flume or glass
Glass cylinder etc., according to the difference of reaction vessel area, the area of the two-dimensional polymer film obtained can be 1um2-1m2.It is following
Examples 1 to 3 be all made of diameter be 7cm weighing bottle as reaction vessel, therefore, the two-dimensional polymer of following embodiment 1-3
The shape of film is 7 centimetres of diameter of circle, the shape of embodiment 4-6 be cut into 1*1 centimetres two-dimensional polymer it is thin
Film.
Technical solution of the present invention is further illustrated combined with specific embodiments below.
Embodiment 1
A kind of preparation method of two-dimensional polymer film, comprising the following steps:
Aromatic multi-amine mixed solution is configured in the weighing bottle that diameter is 7cm, and the more aldehyde mixed solutions of fragrance are added dropwise in virtue
On the liquid level of fragrant polyamines mixed solution, the lid of weighing bottle is covered, a 0.5cm wide is pressed from both sides between lid and the bottle body of weighing bottle
Filter paper item (folder filter paper item for reserve come some gaps, allow aromatics organic solvent B volatilize), in 20~25 DEG C of room temperature transfer
The aromatics organic solvent B volatilization set into the more aldehyde mixed solutions of fragrance finishes (standing time is 24 hours), on liquid level
To the two-dimensional polymer film with a thickness of 20nm, wherein
The amount of the substance of the more aldehyde of fragrance in the more aldehyde mixed solutions of fragrance and the aromatic multi-amine in aromatic multi-amine mixed solution
Ratio 0.00167:0.01389；
The configuration method of aromatic multi-amine mixed solution are as follows: aromatic multi-amine is evenly distributed in organic solvent A, obtains solution
Deionized water is added in solution A and uniformly mixes, obtains the aromatic multi-amine mixed solution of light brown, wherein deionized water by A
Volume parts and aromatic multi-amine substance amount number ratio be 1:0.01389.The concentration of aromatic multi-amine is in solution A
1.2mmol/mL, organic solvent A are aprotic and organic reagent miscible with water, organic solvent A N, N- dimethyl formyl
Amine.
The configuration method of the more aldehyde mixed solutions of fragrance are as follows: the more aldehyde of fragrance are evenly distributed in aromatics organic solvent B, are obtained
To solution B, organic acid is added in solution B, obtains the more aldehyde mixed solutions of fragrance, wherein the parts by volume of aromatics organic solvent B
Several ratios with the amount number of the substance of the more aldehyde of fragrance are 1:0.00167, and the volume of organic acid is the 1% of the volume of solution B；
Organic acid is acetic acid；
Aromatics organic solvent B is chlorobenzene.
The more aldehyde of fragrance are equal benzene trioxin.
Aromatic multi-amine is p-phenylenediamine.
Embodiment 2
A kind of preparation method of two-dimensional polymer film, comprising the following steps:
Aromatic multi-amine mixed solution is configured in the weighing bottle that diameter is 7cm, and the more aldehyde mixed solutions of fragrance are added dropwise in virtue
On the liquid level of fragrant polyamines mixed solution, the lid of weighing bottle is covered, a 0.5cm wide is pressed from both sides between lid and the bottle body of weighing bottle
Filter paper item, the aromatics organic solvent B volatilization placed at 20~25 DEG C of room temperature into the more aldehyde mixed solutions of fragrance, which finishes, (puts
Setting the time is 36 hours), the two-dimensional polymer film with a thickness of 50nm is obtained on liquid level, wherein
The amount of the substance of the more aldehyde of fragrance in the more aldehyde mixed solutions of fragrance and the aromatic multi-amine in aromatic multi-amine mixed solution
Ratio 0.00333:0.01389；
The configuration method of aromatic multi-amine mixed solution are as follows: aromatic multi-amine is evenly distributed in organic solvent A, obtains solution
Deionized water is added in solution A and uniformly mixes, obtains the aromatic multi-amine mixed solution of light brown, wherein deionized water by A
Volume parts and aromatic multi-amine substance amount number ratio be 1:0.01389.The concentration of aromatic multi-amine is in solution A
1.2mmol/mL, organic solvent A are aprotic and organic reagent miscible with water, organic solvent A N, N- dimethyl formyl
Amine.
The configuration method of the more aldehyde mixed solutions of fragrance are as follows: the more aldehyde of fragrance are evenly distributed in aromatics organic solvent B, are obtained
To solution B, organic acid is added in solution B, obtains the more aldehyde mixed solutions of fragrance, wherein the parts by volume of aromatics organic solvent B
Several ratios with the amount number of the substance of the more aldehyde of fragrance are 1:0.00333, and the volume of organic acid is the 1% of the volume of solution B；
Organic acid is acetic acid；
Aromatics organic solvent B is chlorobenzene.
The more aldehyde of fragrance are equal benzene trioxin.
Aromatic multi-amine is p-phenylenediamine.
Embodiment 3
A kind of preparation method of two-dimensional polymer film, comprising the following steps:
Aromatic multi-amine mixed solution is configured in the weighing bottle that diameter is 7cm, and the more aldehyde mixed solutions of fragrance are added dropwise in virtue
On the liquid level of fragrant polyamines mixed solution, the lid of weighing bottle is covered, a 0.5cm wide is pressed from both sides between lid and the bottle body of weighing bottle
Filter paper item, the aromatics organic solvent B volatilization placed at 20~25 DEG C of room temperature into the more aldehyde mixed solutions of fragrance, which finishes, (puts
Setting the time is 48 hours), the two-dimensional polymer film with a thickness of 70nm is obtained on liquid level, wherein
The amount of the substance of the more aldehyde of fragrance in the more aldehyde mixed solutions of fragrance and the aromatic multi-amine in aromatic multi-amine mixed solution
Ratio 0.005:0.01389；
The configuration method of aromatic multi-amine mixed solution are as follows: aromatic multi-amine is evenly distributed in organic solvent A, obtains solution
Deionized water is added in solution A and uniformly mixes, obtains the aromatic multi-amine mixed solution of light brown, wherein deionized water by A
Volume parts and aromatic multi-amine substance amount number ratio be 1:0.01389.The concentration of aromatic multi-amine is in solution A
1.2mmol/mL, organic solvent A are aprotic and organic reagent miscible with water, organic solvent A N, N- dimethyl formyl
Amine.
The configuration method of the more aldehyde mixed solutions of fragrance are as follows: the more aldehyde of fragrance are evenly distributed in aromatics organic solvent B, are obtained
To solution B, organic acid is added in solution B, obtains the more aldehyde mixed solutions of fragrance, wherein the parts by volume of aromatics organic solvent B
Several ratios with the amount number of the substance of the more aldehyde of fragrance are 1:0.005, and the volume of organic acid is the 1% of the volume of solution B；
Organic acid is acetic acid；
Aromatics organic solvent B is chlorobenzene.
The more aldehyde of fragrance are equal benzene trioxin.
Aromatic multi-amine is p-phenylenediamine.
Fig. 2 is that the atomic force microscope for the two-dimensional polymer film that Examples 1 to 3 is prepared characterizes pattern, wherein 2
(a) the two-dimensional polymer film being prepared for embodiment 1, with a thickness of 20nm；2 (b) gather for the two dimension that embodiment 2 is prepared
Object film is closed, with a thickness of 50nm；2 (c) the two-dimensional polymer films being prepared for embodiment 3, with a thickness of 70nm；It can by figure
Know, the two-dimensional polymer film that the present invention is prepared has good homogeneity, and roughness is respectively 0.2nm in 10um
(embodiment 1), 0.7nm (embodiment 2) and 1.8nm (embodiment 3), roughness is lower.
Two-dimensional polymer film (2DP) DMF, the methylene chloride, three chloromethanes that obtained Examples 1 to 3 is prepared
After alkane and acetone impregnate cleaning in 5 hours respectively, discovery 2DP material, which is appointed, to be so stabilized.
Embodiment 4
The two-dimensional polymer film that embodiment 1 is prepared is obtained into memristor as active layer, memristor is from top to bottom
Successively are as follows: active electrode, two-dimensional polymer film and inert electrode, as shown in Figure 1.Active electrode is silver layer, with a thickness of 50nm；
Inert electrode is ITO conductive glass layer.The preparation method of memristor, comprising the following steps:
A) two-dimensional polymer film is transferred to the upper surface of inert electrode, vacuum is dry at 30 DEG C in a vacuum drying oven
Dry 8h；
B) active electrode is deposited on two-dimensional polymer film.The method that silver layer is deposited are as follows: use 100/400 copper mesh as
Mask plate is attached to the upper surface (mesh number of copper mesh is 200 mesh) of two-dimensional polymer film, withRate deposition thickness be
The silver layer of 50nm removes copper mesh after deposition, completes vapor deposition silver layer.
Fig. 3 is the curve of unlatching and erasing that embodiment 4 obtains memristor (using the two-dimensional polymer film of 20nm thickness)；
When testing device, ITO (ITO conductive glass layer) ground connection applies voltage, step-length 0.02V on Ag electrode (silver layer).Scheming
In 3,1 refers to the curve from 0V-1.5V scanning process, and 2 refer to the curve scanned from 1.5-0V, and curve 1 and 2 is in test
Limitation electric current be 10-3；3 refer to the curve that 0-3.3V scanning occurs, and 4 refer to scanning the curve occurred from 3.3-0V, bent
The limitation electric current of line 3 and 4 is 10-2.The step of curve 1 and 2 is the writing process of memristor, is equivalent to information storage, 3 He of curve
4 be the process of memristor erasing.From the figure 3, it may be seen that can be carried out by the memristor that embodiment 1 obtains two-dimensional polymer film preparation
Complete write-in and erase process.
Fig. 4 is the statistics of the cyclical stability for the memristor that embodiment 4 obtains, and is carried out to the same device (memristor)
Unlatching and erasing operation repeatedly, it is found that the two-dimensional polymer film of the thickness can carry out 100 times as the device of active layer
Normal operating.
Fig. 5 is the statistics of the high low resistance state for the memristor that embodiment 4 obtains；To the two dimension polymerization thick with a batch of 20nm
The memristor of object film preparation carries out unlatching and erasing operation, and counts the value of high low resistance state of 200 devices in -0.1V,
As shown in Figure 5, find the memristor on-off ratio of the two-dimensional polymer film preparation of 20nm thickness 102Magnitude.
Fig. 6 is the retention time of the memristor obtained with 0.1V voltage reading Example 4；Write operation is being carried out to device
Afterwards, device is read out with 0.1V voltage, obtains device in the retention time of low resistance state；Erasing behaviour is being carried out to same device
After work, device is read out with 0.1V voltage, obtains device in the retention time of high-impedance state.By obtain two retention times
Drawing of Curve found in same figure, read access time of the device under the thickness under 0.1V voltage be 8*103s。
Embodiment 5
The two-dimensional polymer film that embodiment 2 is prepared is obtained into memristor as active layer, memristor is from top to bottom
Successively are as follows: active electrode, two-dimensional polymer film and inert electrode, active electrode is silver layer, with a thickness of 50nm；Inert electrode is
ITO conductive glass layer.The preparation method of memristor, comprising the following steps:
A) two-dimensional polymer film is transferred to the upper surface of inert electrode, vacuum is dry at 30 DEG C in a vacuum drying oven
Dry 8h；
B) active electrode is deposited on two-dimensional polymer film.The method that silver layer is deposited are as follows: use 100/400 copper mesh as
Mask plate is attached to the upper surface (mesh number of copper mesh is 200 mesh) of two-dimensional polymer film, withRate deposition thickness be
The silver layer of 50nm removes copper mesh after deposition, completes vapor deposition silver layer.
Fig. 7 is the curve of unlatching and erasing that embodiment 5 obtains memristor；When testing device, ITO ground connection, in Ag electricity
It is extremely upper to apply voltage, step-length 0.02V.In Fig. 7,1 refers to the curve from 0V-1.5V scanning process, and 2 refer to from 1.5-
The curve of 0V scanning, limitation electric current of the curve 1 and 2 in test is 10-3；3 refer to the curve that 0-3.3V scanning occurs, and 4 refer to
Be the curve occurred from 3.3-0V scanning, the limitation electric current of curve 3 and 4 is 10-2.Curve 1 and 2 is the write-in of memristor
Journey, is equivalent to the step of information stores, and curve 3 and 4 is the process of memristor erasing.As seen from the figure, 50nm thick two dimension polymerization
The memristor of object film preparation can be completely written and erase process.
Fig. 8 is the statistics of the cyclical stability for the memristor that embodiment 5 obtains, to by 50nm thickness two-dimensional polymer film system
Standby memristor carries out cyclical stability test.The same device is being opened and erasing operation repeatedly, is finding the thickness
Two-dimensional polymer film can carry out 180 subnormal operations as the device of active layer.
Fig. 9 is the statistics of the high low resistance state for the memristor that embodiment 5 obtains (using the two-dimensional polymer film of 50nm thickness)；
Unlatching and erasing operation are carried out to the memristor of the two-dimensional polymer film preparation with a batch of 50nm thickness, and count 200
The value of high low resistance state of the device in -0.1V, as shown in figure 9, the memristor switch of the two-dimensional polymer preparation of discovery 50nm thickness
Than 104Magnitude.
Figure 10 is that the retention time of memristor is obtained with 0.1V voltage reading Example 5 (using the thick two dimension polymerization of 50nm
Object film)；As seen from the figure, after carrying out write operation to device, device is read out with 0.1V voltage, obtains device low
The retention time of resistance state；After carrying out erasing operation to same device, device is read out with 0.1V voltage, device is obtained and exists
The retention time of high-impedance state.By to the Drawing of Curve of two retention times found in same figure, the device under the thickness
Read access time of the part under 0.1V voltage is 1*104s。
Embodiment 6
The two-dimensional polymer film that embodiment 3 is prepared is obtained into memristor as active layer, memristor is from top to bottom
Successively are as follows: active electrode, two-dimensional polymer film and inert electrode, active electrode is silver layer, with a thickness of 50nm；Inert electrode is
ITO conductive glass layer.The preparation method of memristor, comprising the following steps:
A) two-dimensional polymer film is transferred to the upper surface of inert electrode, vacuum is dry at 30 DEG C in a vacuum drying oven
Dry 8h；
B) active electrode is deposited on two-dimensional polymer film.The method that silver layer is deposited are as follows: use 100/400 copper mesh as
Mask plate is attached to the upper surface (mesh number of copper mesh is 200 mesh) of two-dimensional polymer film, withRate deposition thickness be
The silver layer of 50nm removes copper mesh after deposition, completes vapor deposition silver layer.
Figure 11 is that embodiment 6 obtains the curve of unlatching and erasing of memristor (two-dimensional polymer using 70nm thickness is thin
Film)；When testing device, ITO ground connection applies voltage, step-length 0.02V on Ag electrode.In Figure 11,1 is referred to from 0V-
The curve of 1.5V scanning process, 2 refer to the curve scanned from 1.5-0V, and limitation electric current of the curve 1 and 2 in test is 10-3；
3 refer to the curve that 0-3.3V scanning occurs, and 4 refer to scanning the curve occurred, the limitation electric current of curve 3 and 4 from 3.3-0V
It is 10-2.The step of curve 1 and 2 is the writing process of memristor, is equivalent to information storage, curve 3 and 4 are memristor erasings
Process.As seen from the figure, the device that prepared by the two-dimensional polymer of 70nm thickness can be completely written and erase process.
Figure 12 is that embodiment 6 obtains the statistics of cyclical stability of memristor (two-dimensional polymer using 70nm thickness is thin
Film)；Cyclical stability test is carried out to the memristor of 70nm thickness two-dimensional polymer film preparation.It is carried out instead to the same device
Multiple unlatching and erasing operation, it is found that the two-dimensional polymer of the thickness can carry out 200 subnormal behaviour as the device of active layer
Make.
(two-dimensional polymer using 70nm thickness is thin for the statistics of the high low resistance state for the memristor that Figure 13 obtains for embodiment 6
Film)；Unlatching and erasing operation are carried out to the memristor with a batch of 70nm thickness two-dimensional polymer film preparation, and count 200
The value of high low resistance state of a device in -0.1V is depicted as Figure 13, finds the memristor of the two-dimensional polymer film preparation of 70nm thickness
Device on-off ratio is 105Magnitude.
Figure 14 is that the retention time of memristor is obtained with 0.1V voltage reading Example 6 (using the thick two dimension polymerization of 70nm
Object film), after carrying out write operation to device, device is read out with 0.1V voltage, obtains device in the guarantor of low resistance state
Hold the time；After carrying out erasing operation to same device, device is read out with 0.1V voltage, obtains device in high-impedance state
Retention time.By to the Drawing of Curve of two retention times find that the device under the thickness is in 0.1V in same figure
Read access time under voltage is 3.5*104s。
Figure 15 is the nitrogen adsorption/desorption curve for the two-dimensional polymer film that embodiment 2 is prepared.It can by figure
Know, which belongs to I types of absorbent curve, but desorption curve illustrates some nitrogen there is no being overlapped with adsorption curve
It is fixed on 2DPBTA+PDAIn, thus with the presence of micropore in testimonial material.The specific surface area for calculating material is 74.4m2/
G, pore volume are 8.82 × 10-2cm3/g.2DP is obtained by non-localized Density functional theory computation with the data of Figure 15BTA+PDA
The aperture of (two-dimensional polymer film) is 1.41nm, as shown in figure 16.(Figure 15 and 16 instrument models: JB-2020 type compares table
Area tester)
Figure 17 is to obtain the Fourier transform infrared map of two-dimensional polymer film, 3392cm by embodiment 2-1It is N-H key
Stretching vibration, 2292cm-1It is-NH on unreacted aromatic multi-amine monomer2Stretching vibration, 1694cm-1It is that fragrance is aldehyde BTA points more
It is the stretching vibration of the C=O of reaction, 1621cm on son-1It is the C=that the more aldehyde of fragrance and aromatic multi-amine generate after schiff base reaction
The stretching vibration of N, 1260cm-1It is the C-N key stretching vibration of phenyl ring and nitrogen-atoms.The wherein appearance of 1621 characteristic peaks, shows
Schiff base reaction has occurred in the more aldehyde of fragrance and aromatic multi-amine really under the catalysis of organic acid, and the 2DP of generation is existed by two monomers
It is polymerized under schiff bases reflection (answering).(instrument model: Brooker VERTEX80/80v.)
As shown in Figure 18, which belongs to the material of undefined structure.It appears from figure 19 that the image is presented
Out the phenomenon that diffraction ring, illustrates that material belongs to unformed state, demonstrate the result of Figure 18.(instrument: Hitachi
HT7800)
In the inventive solutions, n,N-Dimethylformamide is modified to n,N-dimethylacetamide or dimethyl
Sulfoxide, or acetic acid is modified to trifluoroacetic acid or trifluoromethanesulfonic acid, or chlorobenzene is modified to dichloro-benzenes or toluene, technical effect
It is consistent with above-described embodiment.
Illustrative description has been done to the present invention above, it should explanation, the case where not departing from core of the invention
Under, any simple deformation, modification or other skilled in the art can not spend the equivalent replacement of creative work equal
Fall into protection scope of the present invention.
Claims (10)
1. a kind of memristor that two-dimensional polymer film is obtained as active layer, which is characterized in that the two-dimensional polymer film
Preparation method the following steps are included:
The more aldehyde mixed solutions of fragrance are added dropwise on the liquid level of aromatic multi-amine mixed solution, are placed at 20~25 DEG C of room temperature to institute
The aromatics organic solvent B volatilization stated in the more aldehyde mixed solutions of fragrance finishes, and two-dimensional polymer film is obtained on liquid level,
In,
The substance of fragrance more aldehyde and the aromatic multi-amine in the aromatic multi-amine mixed solution in the more aldehyde mixed solutions of fragrance
Amount ratio (0.0015~0.005): 0.01389；
The configuration method of the aromatic multi-amine mixed solution are as follows: aromatic multi-amine is evenly distributed in organic solvent A, obtains solution
Deionized water is added in the solution A and uniformly mixes, obtains the aromatic multi-amine mixed solution of light brown, wherein described by A
The concentration of aromatic multi-amine is 0.185~4.63mmol/mL in solution A, and the organic solvent A is aprotic and miscible with water
Organic reagent；
The configuration method of the more aldehyde mixed solutions of fragrance are as follows: the more aldehyde of fragrance are evenly distributed in aromatics organic solvent B, are obtained
To solution B, organic acid is added in the solution B, obtains the more aldehyde mixed solutions of fragrance, wherein the aromatics organic solvent B
Volume parts and the more aldehyde of fragrance substance amount number ratio be (0.5~1): (0.0008~0.01), it is described organic
The volume of acid is the 0.7~1.5% of the volume of the solution B；
The organic acid is acetic acid, trifluoroacetic acid or trifluoromethanesulfonic acid；
Aromatics organic solvent B is chlorobenzene, dichloro-benzenes or toluene.
2. memristor according to claim 1, which is characterized in that the memristor is from top to bottom successively are as follows: active electrode,
Two-dimensional polymer film and inert electrode, the active electrode are aluminium layer, layers of copper or silver layer；The inert electrode is ITO conductive
Glassy layer, layer gold or platinum layer.
3. memristor according to claim 2, which is characterized in that the aromatics organic solvent B is volatilized the time finished
It is at least 24 hours.
4. memristor according to claim 3, which is characterized in that in the aromatic multi-amine mixed solution, it is described go from
The ratio of the amount number of the substance of the volume parts of sub- water and the aromatic multi-amine is 1:(0.005~0.03)；One volume
The unit of number is mL, and the unit of a mass fraction is mg, and the unit of the amount number of a substance is mmol.
5. memristor according to claim 4, which is characterized in that the more aldehyde of fragrance include two or 2 or more aldehyde
Base；The aromatic multi-amine includes two or 2 or more amidos；The deionized water is ultrapure water, and resistivity is 18.2M Ω ﹒
cm。
6. memristor according to claim 5, which is characterized in that the organic solvent A be n,N-Dimethylformamide, N,
N- dimethyl acetamide or dimethyl sulfoxide.
7. memristor according to claim 6, which is characterized in that the active electrode with a thickness of 10~200nm；It is described
Two-dimensional polymer film with a thickness of 2~80nm.
8. the preparation method of memristor as described in any one of claim 1~7, which comprises the following steps:
A) the two-dimensional polymer film is transferred to the upper surface of inert electrode, it is true at 15~40 DEG C in a vacuum drying oven
Dry 2~the 10h of sky；
B) active electrode is deposited on the two-dimensional polymer film.
9. the preparation method of memristor according to claim 8, which is characterized in that in the step b), when the work
Property electrode when being silver layer, method that the silver layer is deposited are as follows: copper mesh is used to be attached to the two-dimensional polymer film as mask plate
Upper surface, withRate deposition thickness be 20~100nm silver layer, remove the copper mesh after deposition, complete
Silver layer is deposited.
10. the preparation method of memristor according to claim 9, which is characterized in that the mesh number of the copper mesh be 200~
300 mesh.
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