CN110311195B - Miniaturized ultra-wideband artificial surface plasmon band-pass filter - Google Patents
Miniaturized ultra-wideband artificial surface plasmon band-pass filter Download PDFInfo
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- CN110311195B CN110311195B CN201910495394.5A CN201910495394A CN110311195B CN 110311195 B CN110311195 B CN 110311195B CN 201910495394 A CN201910495394 A CN 201910495394A CN 110311195 B CN110311195 B CN 110311195B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
- H01P1/2039—Galvanic coupling between Input/Output
Abstract
The invention discloses a miniaturized ultra-wideband artificial surface plasmon band-pass filter, which comprises an upper-layer metal structure, a first dielectric substrate, a middle-layer traditional plasmon waveguide, a second dielectric substrate and a lower-layer metal structure which are sequentially arranged from top to bottom, wherein the middle of the upper-layer metal structure is a single-conductor miniaturized plasmon waveguide, two ends of the waveguide are respectively connected with a transition section, and the other end of the transition section is connected with a first metal strip; the length of the middle-layer traditional plasmon waveguide is the same as that of the upper-layer single-conductor miniaturized plasmon waveguide, and the middle-layer traditional plasmon waveguide comprises a plurality of artificial surface plasmon unit structures; the lower-layer metal structure comprises two symmetrical structures which are not communicated in the middle, and the symmetrical structures sequentially comprise a rectangular metal ground, a trapezoidal metal ground transition structure and a lower-layer artificial surface plasmon transition structure from one end to the middle. The invention can reduce the electrical size to 26% of the traditional artificial surface plasmon structure and expand the relative working bandwidth of the band-pass filter to 180%.
Description
Technical Field
The invention relates to a band-pass filter, in particular to a miniaturized ultra-wideband artificial surface plasmon band-pass filter.
Background
The surface plasmon is an optical surface wave excited by interaction of photons and electrons on a metal/dielectric medium interface, and has the unique advantages of wavelength compression, near field enhancement and the like. However, when the operating frequency is reduced to the microwave band, such surface plasmons are essentially impossible to exist because the metal behaves as a perfect conductor at this time. An alternative approach is taken that by periodically etching sub-wavelength artificial structures on the metal, artificial surface plasmons can be excited and used to mimic optical surface plasmons in the microwave band. The ultrathin two-dimensional artificial surface plasmon waveguide is easier to integrate with a traditional radio frequency circuit, so that people pay attention to the waveguide widely. Since an effective conversion method between the artificial surface plasmon waveguide and the traditional circuit is provided, the application of the ultrathin artificial surface plasmon waveguide in the radio frequency circuit is increasing. Because the ultra-wideband band-pass filter is a key component in a modern broadband wireless communication system, the design of the ultra-wideband band-pass filter by using the artificial surface plasmon waveguide has a remarkable engineering value. Because of the high-frequency cut-off characteristic, the artificial surface plasmon waveguide is a natural low-pass filter, and the artificial surface plasmon waveguide band-pass filter can be designed by introducing a low-frequency transmission zero point.
Disclosure of Invention
The purpose of the invention is as follows: the design method of the artificial surface plasmon band-pass filter is provided, and the ultra-wideband and miniaturization effects are remarkable.
The technical scheme is as follows: in order to realize the purpose, the invention adopts the following technical scheme:
a miniaturized ultra-wideband artificial surface plasmon band-pass filter comprises an upper-layer metal structure, a first medium substrate, a middle-layer traditional plasmon waveguide, a second medium substrate and a lower-layer metal structure which are sequentially arranged from top to bottom, wherein the upper-layer metal structure comprises two first metal strips, two micro-slotted artificial surface plasmon unit transition sections with gradually increased sawtooth heights and a single-conductor miniaturized plasmon waveguide comprising a plurality of micro-slotted artificial surface plasmon units, the single-conductor miniaturized plasmon waveguide is positioned in the middle, two ends of the single-conductor miniaturized plasmon waveguide are respectively connected with one transition section, and the other end of the transition section is connected with the first metal strips; the length of the middle-layer traditional plasmon waveguide is the same as that of the single-conductor miniaturized plasmon waveguide, the middle-layer traditional plasmon waveguide comprises a plurality of artificial surface plasmon unit structures, and the number of the artificial surface plasmon unit structures is the same as that of the micro-grooved artificial surface plasmon units in the single-conductor miniaturized plasmon waveguide; the lower-layer metal structure comprises two symmetrical structures which are not communicated with each other in the middle, and the symmetrical structures sequentially comprise a metal ground, a metal ground transition structure and a lower-layer artificial surface plasmon transition structure from one end to the middle.
Optionally, the middle of the micro-grooved artificial surface plasmon unit is longitudinally provided with a plurality of bow-shaped grooves, and the upper end and the lower end of the micro-grooved artificial surface plasmon unit are transversely provided with a plurality of bow-shaped grooves respectively.
Optionally, the single-conductor miniaturized plasmon waveguide and the middle-layer conventional plasmon waveguide are overlapped on an x-y plane and separated by the first dielectric substrate in the z direction, and the two waveguide jointly form the double-conductor miniaturized artificial surface plasmon waveguide.
Optionally, the cutoff frequency of the two-conductor miniaturized artificial surface plasmon waveguide is 4.25GHz, and the corresponding cutoff wavelength is 66.7 mm.
Optionally, the upper layer metal structure and the lower layer metal structure jointly form a conversion structure of the microstrip line and the double-conductor miniaturized artificial surface plasmon waveguide.
Optionally, the lower metal structure and the middle layer conventional plasmon waveguide are partially overlapped on an x-y plane, the overlapped positions are located on two sides of the middle layer conventional plasmon waveguide, the range is one unit size, and the overlapped positions are separated by the second dielectric substrate in the z direction.
Optionally, the metal ground in the lower metal structure is a rectangular structure, and the metal ground transition structure is a trapezoidal structure.
Optionally, the passband of the bandpass filter is 0.23-4.25GHz, the relative bandwidth is up to 180%, and the group delay within the passband is 1-1.8 ns.
Has the advantages that: compared with the prior art, the invention can obviously improve the passband bandwidth of the band-pass filter, greatly reduce the geometric dimension of the artificial surface plasmon waveguide and is beneficial to the miniaturization of the whole application system. In addition, the invention has simple manufacture, convenient operation and easy integration, only needs one photoetching process, not only saves the manufacturing cost, but also avoids the processing error caused by a complex structure.
Drawings
Fig. 1 is a schematic diagram of a miniaturized artificial surface plasmon band-pass filter, in which (a) is an overall schematic diagram and (b) is a layered display diagram;
FIG. 2 is a schematic diagram of a miniaturized artificial surface plasmon unit structure and surface current distribution, wherein (a) is a structural diagram and (b) is a surface current distribution diagram;
FIG. 3 is a comparison of dispersion curves for conventional and miniaturized surface plasmon units;
FIG. 4 is an S parameter of a miniaturized artificial surface plasmon band pass filter;
FIG. 5 is a group delay of a miniaturized artificial surface plasmon band pass filter;
FIG. 6 is an experimental sample of a miniaturized artificial surface plasmon band pass filter;
in the figure: the structure comprises an upper-layer metal structure 1, a first medium substrate 2, a middle-layer traditional plasmon waveguide 3, a second medium substrate 4, a lower-layer metal structure 5, a first metal strip 11, a transition section 12, a single-conductor miniaturized plasmon waveguide 13, a rectangular metal ground 51, a trapezoidal metal ground transition structure 52 and a lower-layer artificial surface plasmon transition structure 53.
Detailed Description
The technical solution of the present invention is described in detail below with reference to the accompanying drawings and specific embodiments.
Fig. 1(a) is an overall model of the proposed miniaturized artificial surface plasmon band-pass filter, which includes two dielectric substrates, and three metal layers respectively located between the two dielectric substrates and on the upper and lower surfaces, the dielectric constants of the two dielectric substrates are the same, both are 3.48, and the thicknesses of the substrates are 0.762mm and 0.101mm, respectively. Fig. 1(b) is a layered display for a three-layered metal structure, wherein an upper-layer metal structure 1 includes a first metal strip 11, two micro-grooved artificial surface plasmon unit transition sections 12 whose saw tooth heights are gradually increased, and a single-conductor miniaturized plasmon waveguide 13 including a plurality of micro-grooved artificial surface plasmon units, the two transition sections 12 are respectively located at both ends of the upper-layer metal strip, and the transition sections are connected with the first metal strip and symmetrically disposed at both sides of the upper-layer metal strip, and the single-conductor miniaturized plasmon waveguide is located between the transition sections. The length of the middle-layer traditional plasmon waveguide 3 is the same as that of the single-conductor miniaturized plasmon waveguide, and the middle-layer traditional plasmon waveguide is also composed of the same number of artificial surface plasmon units, and the difference is that the artificial surface plasmon unit structure is in a traditional form without micro-grooving. The micro-slotting artificial surface plasmon unit is characterized in that transverse and longitudinal micro-slotting is carried out on a traditional zigzag artificial surface plasmon structure, and dislocation is generated, so that the conductor structure is not cut off (a structure similar to a bow shape is formed). The upper layer single-conductor miniaturized plasmon waveguide and the middle layer traditional plasmon waveguide are superposed on the x-y plane and separated by the first dielectric substrate in the z direction, and the upper layer single-conductor miniaturized plasmon waveguide and the middle layer traditional plasmon waveguide jointly form the double-conductor miniaturized artificial surface plasmon waveguide. The lower metal structure 5 is composed of two symmetrical parts respectively located at two ends of the whole structure, and the components of the lower metal structure comprise a rectangular metal ground 51, a trapezoidal metal ground transition structure 52 and a lower artificial surface plasmon transition structure 53. The upper layer metal structure and the lower layer metal structure jointly form a conversion structure of the microstrip line and the double-conductor miniaturized artificial surface plasmon waveguide. The lower metal structure and the middle layer of the traditional plasmon waveguide respectively have a unit-scale overlapping range on two sides, overlap in an x-y plane, and are separated by a second dielectric substrate in a z direction.
As shown in fig. 1, a radio frequency signal is fed into a band pass filter through a feed structure composed of a first metal strip 11 and a rectangular metal ground 51 at one end, and is converted into a plasmon surface wave through an artificial surface plasmon unit transition section 12, a trapezoidal metal ground transition structure 52 and a lower artificial surface plasmon transition structure 53, a signal having a frequency within a band pass band range is conducted to the other end, and other radio frequency signals are reflected, thereby achieving an effective filtering effect.
Wherein the values of the parameters are as follows: d 4.7mm, h 11.2 mm, h2 0.8mm, h3 0.4mm, h4 1mm, h5 0.7mm, h6 0.4mm, L1 8mm, L2 9.8mm, Wt 12.8 mm.
As shown in fig. 2, (a) is a diagram of a micro-grooved artificial surface plasmon unit structure proposed by the present invention, and (b) is a diagram of a corresponding surface current distribution obtained by full-wave simulation. It can be seen that the micro-grooved design of the cell surface greatly increases the conduction path of the current, thus creating a significant miniaturization effect.
The values of the parameters of the unit in fig. 2(a) are as follows: 2.8mm for a, 4.7mm for p, 5.2mm for H, 1.6mm for H, wg＝0.2 mm，ts＝0.762mm。
As shown in fig. 3, eigen-mode simulation is performed on the miniaturized surface plasmon unit proposed by the present invention, wherein the abscissa represents transmission frequency, and the ordinate represents dispersion, so that the cutoff frequency of the dispersion curve can be obtained to be 4.25GHz, and the corresponding cutoff wavelength is 66.7mm, as shown by the dotted line in the figure; for comparison of the miniaturization effect, as shown by the solid line in fig. 3, the dispersion curve of the conventional single-layer unslotted plasmon unit is also given here, the geometric size thereof is the same as that of the miniaturized surface plasmon unit of the present invention, the cut-off frequency thereof is 17GHz, and the corresponding cut-off wavelength is 17.6 mm. Therefore, the designed dual-conductor miniaturized artificial surface plasmon waveguide is electrically reduced to 26% of the conventional structure in terms of cutoff wavelength, and the miniaturization effect is remarkable.
FIG. 4 is an S parameter of a miniaturized artificial surface plasmon band pass filter, wherein the abscissa represents the transmission frequency and the ordinate represents the amplitude; FIG. 4 shows that the 3dB pass band range (S11< -10dB, S21 < -3 dB) of the designed band-pass filter is 0.23-4.25GHz, the relative bandwidth is as high as 180%, the pass band relative bandwidth of the traditional band-pass filter is greatly surpassed, the insertion loss is only 0.1dB, and the high-efficiency transmission performance of the filter is highlighted.
Fig. 5 is the group delay data of the miniaturized artificial surface plasmon band pass filter, and it can be seen that the group delay range is 1-1.8ns within the pass band range. Indicating that the filter has good signal fidelity characteristics.
Fig. 6 is a picture of a sample object produced showing photographs of the front and back of the filter. Sample size was only 11.2 cm2(0.07λ0 2) Wherein λ is0Is the filter center operating frequency. A1 cm line segment is given in the figure, and the miniaturization effect of the design is visually proved through comparison.
The invention relates to a miniaturized ultra-wideband surface plasmon band-pass filter. The filter is a three-layer metal structure and is separated by two dielectric substrates. The upper layer metal structure is a micro-slotted bilateral sawtooth artificial surface plasmon transmission line, and the height of the sawtooth is designed to be from low to high in order to realize good matching. The middle-layer metal structure is a section of plasmon transmission line with the same sawtooth height, the middle position is shorter than the upper-layer transmission line in length, and the sawtooth unit structures are in one-to-one correspondence with the upper-layer structure positions. The lower metal structure is divided into two sections with the same shape, and the two sections are symmetrically designed at the two ends of the integral structure of the filter respectively. And rectangular metal grounds are arranged near the two ends and are transited to a section of truncated plasmon transmission line through a trapezoidal conversion structure. A superposition range with a unit size exists between the lower cut-off plasmon transmission line and the middle layer structure, a capacitive coupling feed effect is formed, and therefore the low-frequency suppression effect of the band-pass filter is achieved, and the high-frequency cut-off effect of the filter is achieved through the natural low-pass characteristic of the artificial surface plasmon transmission line. The design can reduce the electrical size to 26% of the traditional artificial surface plasmon structure, and the relative working bandwidth of the band-pass filter is expanded to 180% for the first time.
Compared with the prior art, the invention can obviously improve the passband bandwidth of the band-pass filter, greatly reduce the geometric dimension of the artificial surface plasmon waveguide and is beneficial to the miniaturization of the whole application system. In addition, the invention has simple manufacture, convenient operation and easy integration, only needs one photoetching process, not only saves the manufacturing cost, but also avoids the processing error caused by a complex structure.
Claims (8)
1. The utility model provides a artifical surface plasmon band pass filter of miniaturized ultra wide band which characterized in that: the micro-groove miniature plasmon waveguide comprises an upper-layer metal structure (1), a first medium substrate (2), a middle-layer traditional plasmon waveguide (3), a second medium substrate (4) and a lower-layer metal structure (5) which are sequentially arranged from top to bottom, wherein the upper-layer metal structure comprises two first metal strips (11), two micro-groove artificial surface plasmon unit transition sections (12) with gradually increased sawtooth heights and a single-conductor miniature plasmon waveguide (13) comprising a plurality of micro-groove artificial surface plasmon units, the single-conductor miniature plasmon waveguide is positioned in the middle, two ends of the single-conductor miniature plasmon waveguide are respectively connected with one transition section, and the other end of the transition section is connected with the first metal strips; the length of the middle-layer traditional plasmon waveguide (3) is the same as that of the single-conductor miniaturized plasmon waveguide (13), the middle-layer traditional plasmon waveguide comprises a plurality of artificial surface plasmon unit structures, and the number of the artificial surface plasmon unit structures is the same as that of micro-grooved artificial surface plasmon units in the single-conductor miniaturized plasmon waveguide (13); the lower-layer metal structure comprises two symmetrical structures which are not communicated with each other in the middle, and the symmetrical structures sequentially comprise a metal ground (51), a metal ground transition structure (52) and a lower-layer artificial surface plasmon transition structure (53) from one end to the middle.
2. The miniaturized ultra-wideband artificial surface plasmon band-pass filter according to claim 1, characterized in that: the middle of the micro-grooved artificial surface plasmon unit is longitudinally provided with a plurality of bow-shaped grooves, and the upper end and the lower end of the micro-grooved artificial surface plasmon unit are transversely provided with a plurality of bow-shaped grooves respectively.
3. The miniaturized ultra-wideband artificial surface plasmon band-pass filter according to claim 1, characterized in that: the projection of the single-conductor miniaturized plasmon waveguide and the projection of the middle-layer traditional plasmon waveguide are superposed on an x-y plane and separated by the first dielectric substrate in the z direction, and the single-conductor miniaturized plasmon waveguide and the middle-layer traditional plasmon waveguide jointly form the double-conductor miniaturized artificial surface plasmon waveguide.
4. The miniaturized ultra-wideband artificial surface plasmon band-pass filter according to claim 3, characterized in that: the cut-off frequency of the double-conductor miniaturized artificial surface plasmon waveguide is 4.25GHz, and the corresponding cut-off wavelength is 66.7 mm.
5. The miniaturized ultra-wideband artificial surface plasmon band-pass filter according to claim 1, characterized in that: the upper layer metal structure and the lower layer metal structure jointly form a conversion structure of the microstrip line and the double-conductor miniaturized artificial surface plasmon waveguide.
6. The miniaturized ultra-wideband artificial surface plasmon band-pass filter according to claim 1, characterized in that: the projection of the lower metal structure and the projection of the middle traditional plasmon waveguide are partially overlapped on an x-y plane, the overlapped positions are arranged on two sides of the middle traditional plasmon waveguide, the range of the overlapped positions is one unit size of the middle traditional plasmon waveguide, and the overlapped positions are separated by a second medium substrate in the z direction.
7. The miniaturized ultra-wideband artificial surface plasmon band-pass filter according to claim 1, characterized in that: the metal ground in the lower metal structure is in a rectangular structure, and the metal ground transition structure is in a trapezoidal structure.
8. The miniaturized ultra-wideband artificial surface plasmon band-pass filter according to claim 1, characterized in that: the band-pass filter has a pass band range of 0.23-4.25GHz, a relative bandwidth of up to 180%, and a group delay within the pass band range of 1-1.8 ns.
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| CN111009708B (en) * | 2019-12-20 | 2021-04-02 | 南京航空航天大学 | Band-pass filter based on equivalent local surface plasmon and working method thereof |
| CN114122654A (en) * | 2020-08-31 | 2022-03-01 | 华为技术有限公司 | Artificial surface plasmon transmission line structure, circuit board and electronic equipment |
| CN114335938B (en) * | 2021-12-29 | 2023-02-03 | 杭州电子科技大学 | Miniature adjustable band-pass filter based on artificial surface plasmon |
| CN114384621B (en) * | 2022-02-11 | 2023-07-04 | 中国科学院上海技术物理研究所 | Angle insensitive narrow-band filter based on double plasmon resonance |
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