CN110311193A - Double narrowbands based on frequency-selective surfaces gate terahertz filter - Google Patents
Double narrowbands based on frequency-selective surfaces gate terahertz filter Download PDFInfo
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- CN110311193A CN110311193A CN201910662159.2A CN201910662159A CN110311193A CN 110311193 A CN110311193 A CN 110311193A CN 201910662159 A CN201910662159 A CN 201910662159A CN 110311193 A CN110311193 A CN 110311193A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
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Abstract
The present invention proposes that double narrowbands based on frequency-selective surfaces gate terahertz filter, and the structural unit of multiple evenly distributed periodic structures being square is equipped at the frequency-selective surfaces of the filter；The frequency-selective surfaces material is metal；The structural unit is asymmetric hollow out cross；Brachium, the arm of the transverse arm and vertical arm that form asymmetric hollow out cross are wide unequal；In periodic structure, the transverse arm head and the tail of each structural unit are adjacent to form a plurality of horizontal line being parallel to each other, and the vertical arm head and the tail of each structural unit are adjacent to form a plurality of vertical line being parallel to each other；The present invention can realize double narrowband selection filter functions on single device.
Description
Technical field
The present invention relates to Terahertz Technology fields, are based especially on double narrowbands gating Terahertz filtering of frequency-selective surfaces
Device.
Background technique
THz wave refers to the electromagnetic wave of frequency 0.1-10THz (1THz=1012Hz) range, its corresponding wave-length coverage
For 30 μm of -3mm, wave band be located at traditional microwave and it is infrared between.In non-destructive testing, safety is imaged Terahertz Technology, communication and
There is extensive potential application in the fields such as sensing.These applications not only need efficient terahertz sources source and detector, also need
Efficient optical device is wanted to regulate and control THz wave, such as filter, polarizing film, wave plate, high-speed switch.In terahertz wave band
Lack the device of highly effective and limits the development of Terahertz Technology to manipulate THz wave.Terahertz filter can will make an uproar
Sound and Signal separator are highly important function elements in Terahertz communication and terahertz imaging system.
Terahertz filter mainly includes with Types Below: THz wave waveguide filter, photon crystal filter and being based on
The Terahertz of frequency-selective surfaces (Frequency Selective Surface, FSS) and Meta Materials (Metamaterial) are filtered
Wave device.THz wave waveguide filter is application of the microwave waveguide filtering theory in terahertz wave band, but due to Terahertz wavelength compared with
Short, the machining accuracy usually required that is very high (micron dimension), and waveguide type filter belongs to three-dimensional structure, general processing technology
It is difficult to meet process requirements.Photonic crystal is the artificial electromagnetic medium heterogeneous of a kind of dielectric constant period profile.Artificially
After introducing defect in the photonic crystal, forms one and possess own resonant frequency microcavity, the electromagnetism wave energy and defect of specific frequency
It resonates, this, which allows for photonic crystal, filtering characteristic.Photon crystal filter has good filter effect, but crystal
Structure it is complex, it usually needs processed in material internal, in addition, vulnerable to such environmental effects such as temperature, therefore
It cannot well adapt to environment transformation.
In addition to the filter of both the above type, research hotspot in recent years is based on frequency-selective surfaces and Meta Materials
Terahertz filter.Meta Materials are primarily referred to as those and are processed by complicated engineer with the period according to using needs
Property microstructure unit three-dimensional composite material, this kind of material has the characteristic that does not have of general material.And frequency-selective surfaces
A kind of two-dimensional structure, refers to the metal resonant patch or metal surface resonance pore cell of periodic arrangement, realize band resistance or
The filter effect of band logical.The structure size of the metal unit of frequency-selective surfaces determines the centre frequency of filter；Unit
Shape determines filter filter characteristics.Compared to waveguide filter and photon crystal filter, the filter based on frequency-selective surfaces
Wave device has many advantages, such as that simple structure, easy processing, frequency response are good.
Summary of the invention
The present invention proposes that double narrowbands based on frequency-selective surfaces gate terahertz filter, can be real on single device
Existing double narrowbands select filter function.
The present invention uses following technical scheme.
Double narrowbands based on frequency-selective surfaces gate terahertz filter, set at the frequency-selective surfaces of the filter
There is the structural unit of multiple evenly distributed periodic structures being square；The frequency-selective surfaces material is metal；It is described
Structural unit is asymmetric hollow out cross；Brachium, the arm of the transverse arm and vertical arm that form asymmetric hollow out cross are wide unequal.
The transverse arm is the galianconism of asymmetric hollow out cross；The vertical arm is the long-armed of asymmetric hollow out cross.
When incident filter THz wave electric field polarization direction perpendicular to frequency-selective surfaces structure structural unit
It is long-armed when, then filter low frequency obtain narrowband transmission peaks；When the electric field polarization direction of the THz wave of incident filter is hung down
Directly when the galianconism of the structural unit of frequency-selective surfaces structure, then filter obtains narrowband transmission peaks in high band.
When long-armed or galianconism the length of structural unit changes, the centre frequency of narrowband transmission peaks changes；When structure list
When long-armed or galianconism the width of member changes, the bandwidth of narrowband transmission peaks changes.
The preparation process of the frequency-selective surfaces of the filter includes but is not limited to photoetching, mechanical micro Process, chemistry quarter
Erosion or femtosecond laser parallel micromachining.
The frequency-selective surfaces are formed with conductive film material.
The material of the frequency-selective surfaces is conductive metal；The conductive metal includes but is not limited to gold, silver or aluminium.
Compared to the prior art, the invention has the following advantages: it is proposed by the invention based on frequency-selective surfaces
Double narrowbands gate terahertz filter, compared with traditional conventional terahertz filter part, have and have the advantage that
(1) single device realizes double narrowband gatings: general frequency-selective surfaces are only operable on a certain specific center frequency
Rate.And the terahertz filter of the present invention based on frequency-selective surfaces, double narrowband gatings can be realized by rotating angle
Effect.
(2) working frequency of dual band pass is realized by adjusting two brachiums.
(3) transmission peaks bandwidth can pass through the wide realization of regulating arm.
Detailed description of the invention
The present invention is described in more detail with reference to the accompanying drawings and detailed description:
Attached drawing 1 is the schematic diagram of the structural unit of frequency-selective surfaces；
Attached drawing 2 is the schematic diagram of frequency-selective surfaces；
Attached drawing 3 be THz wave respectively from 0 ° and 90 ° incident filter when transmissivity spectral line；
Attached drawing 4 is that the transmissivity spectral line when galianconism length of structural unit is adjusted to 170 μm by 120 μm changes schematic diagram；
In figure: 1- frequency-selective surfaces；2- structural unit.
Specific embodiment
As shown in Figs 1-4, double narrowbands based on frequency-selective surfaces gate terahertz filter, the frequency of the filter
Select the structural unit 2 that multiple evenly distributed periodic structures being square are equipped at surface 1；The frequency-selective surfaces material
Material is metal；The structural unit is asymmetric hollow out cross；Form the transverse arm of asymmetric hollow out cross and brachium, the arm of vertical arm
It is wide unequal.
The transverse arm is the galianconism of asymmetric hollow out cross；The vertical arm is the long-armed of asymmetric hollow out cross.
When incident filter THz wave electric field polarization direction perpendicular to frequency-selective surfaces structure structural unit
It is long-armed when, then filter low frequency obtain narrowband transmission peaks；When the electric field polarization direction of the THz wave of incident filter is hung down
Directly when the galianconism of the structural unit of frequency-selective surfaces structure, then filter obtains narrowband transmission peaks in high band.
When long-armed or galianconism the length of structural unit changes, the centre frequency of narrowband transmission peaks changes；When structure list
When long-armed or galianconism the width of member changes, the bandwidth of narrowband transmission peaks changes.
The preparation process of the frequency-selective surfaces of the filter includes but is not limited to photoetching, mechanical micro Process, chemistry quarter
Erosion or femtosecond laser parallel micromachining.
The frequency-selective surfaces are formed with conductive film material.
The material of the frequency-selective surfaces is conductive metal；The conductive metal includes but is not limited to gold, silver or aluminium.
Embodiment:
In this example, structural unit is cross aperture type cellular construction, the parameters of structure, including period P, long brachium
L1, long-armed width W1, the long L2 of cross galianconism, the wide W2 of galianconism.
On frequency-selective surfaces, ten word cell of pore type forms periodic structure by square arrangement with some cycles P.
The frequency-selective surfaces terahertz filter selects 10 μm of thickness of aluminium foil, uses in performance of filter simulation
Drude model parameter, aluminum plasma frequencies omegap=2.24 × 1016Rad/s, collision frequency ωτ=1.24 × 1014rad/s。
Described cross P=250 μm of frequency-selective surfaces structural cycle, L1=230 μm of cross long brachium, long-armed width W1=
3 μm, galianconism is L2=120 μm long, and galianconism is W2=6 μm wide.
Transmissivity spectral line of the filter when rotating angle and being 0 ° and 90 ° in Fig. 3 present invention.Namely when incident Terahertz
When the electric field polarization direction of wave is perpendicular to galianconism (0 °), device transmission peaks are located at 1THz；When the electric field polarization of incident THz wave
Direction perpendicular to it is long-armed when (90 °), device transmission peaks are located at 0.45THz；
Fig. 4 is the long L of galianconism of filter in the present invention2Length is adjusted to 170 μm of transmissivity spectral line by 120 μm.Vertically
The centre frequency of transmission peaks is influenced in the brachium of incident terahertz polarization pitman arm, keeps cross frequency-selective surfaces structure
Other parameters are constant, by galianconism L2Length is adjusted to 170 μm by 120 μm, when the polarization direction of incident THz wave electric field is vertical
When galianconism (0 °), the central homology frequency of device transmission peaks changes into 0.84THz, the i.e. centre frequency of transmission peaks by 1.0THz
It is mobile toward low frequency.Therefore the adjusting of centre frequency can be realized by the brachium of simple adjustment cross structure.Meanwhile arm width will affect
The bandwidth of transmission peaks.
Filter in this example can be carried out by techniques such as photoetching, mechanical micro Process, chemical etching, femtosecond laser parallel micromachinings
Preparation.
Claims (6)
1. double narrowbands based on frequency-selective surfaces gate terahertz filter, it is characterised in that: the frequency of the filter is selected
Select the structural unit that multiple evenly distributed periodic structures being square are equipped at surface；The frequency-selective surfaces material is
Metal；The structural unit is asymmetric hollow out cross；Brachium, the arm of the transverse arm and vertical arm that form asymmetric hollow out cross are wide
It is unequal.
2. double narrowbands according to claim 1 based on frequency-selective surfaces gate terahertz filter, it is characterised in that:
The transverse arm is the galianconism of asymmetric hollow out cross；The vertical arm is the long-armed of asymmetric hollow out cross.
3. double narrowbands according to claim 2 based on frequency-selective surfaces gate terahertz filter, it is characterised in that:
When the electric field polarization direction of the THz wave of incident filter perpendicular to frequency-selective surfaces structure structural unit it is long-armed when,
Then filter obtains narrowband transmission peaks in low frequency；When the electric field polarization direction of the THz wave of incident filter is selected perpendicular to frequency
When selecting the galianconism of the structural unit of surface texture, then filter obtains narrowband transmission peaks in high band.
4. double narrowbands according to claim 3 based on frequency-selective surfaces gate terahertz filter, it is characterised in that:
When long-armed or galianconism the length of structural unit changes, the centre frequency of narrowband transmission peaks changes；It is long-armed when structural unit
Or the width of galianconism, when changing, the bandwidth of narrowband transmission peaks changes.
5. double narrowbands according to claim 1 based on frequency-selective surfaces gate terahertz filter, it is characterised in that:
The preparation process of the frequency-selective surfaces of the filter includes but is not limited to photoetching, mechanical micro Process, chemical etching or femtosecond
Laser Micro-Machining.
6. double narrowbands according to claim 5 based on frequency-selective surfaces gate terahertz filter, it is characterised in that:
The material of the frequency-selective surfaces is conductive metal；The conductive metal includes but is not limited to gold, silver or aluminium.
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Cited By (4)
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| CN112635948A (en) * | 2020-12-18 | 2021-04-09 | 南京锐码毫米波太赫兹技术研究院有限公司 | Ultra-low loss dielectric film in millimeter wave terahertz frequency band and surface metallization method |
| CN113224540A (en) * | 2021-04-14 | 2021-08-06 | 中国科学院国家空间科学中心 | Terahertz metamaterial wave absorber for inhibiting infrared absorption |
| CN115561845A (en) * | 2022-09-16 | 2023-01-03 | 合肥工业大学 | Optical band broadband metamaterial wave absorber |
| CN116073097A (en) * | 2023-03-14 | 2023-05-05 | 福州大学 | Terahertz broadband filter based on double-layer metamaterial and preparation method thereof |
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| CN112635948A (en) * | 2020-12-18 | 2021-04-09 | 南京锐码毫米波太赫兹技术研究院有限公司 | Ultra-low loss dielectric film in millimeter wave terahertz frequency band and surface metallization method |
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| CN113224540B (en) * | 2021-04-14 | 2022-07-26 | 中国科学院国家空间科学中心 | Terahertz metamaterial wave absorber for inhibiting infrared absorption |
| CN115561845A (en) * | 2022-09-16 | 2023-01-03 | 合肥工业大学 | Optical band broadband metamaterial wave absorber |
| CN115561845B (en) * | 2022-09-16 | 2024-04-30 | 合肥工业大学 | Optical band broadband metamaterial wave absorber |
| CN116073097A (en) * | 2023-03-14 | 2023-05-05 | 福州大学 | Terahertz broadband filter based on double-layer metamaterial and preparation method thereof |
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