CN110307913A - A kind of polar region multiple spot cryogenic temperature sensing device and temp measuring method - Google Patents
A kind of polar region multiple spot cryogenic temperature sensing device and temp measuring method Download PDFInfo
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- CN110307913A CN110307913A CN201910580977.8A CN201910580977A CN110307913A CN 110307913 A CN110307913 A CN 110307913A CN 201910580977 A CN201910580977 A CN 201910580977A CN 110307913 A CN110307913 A CN 110307913A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/02—Means for indicating or recording specially adapted for thermometers
- G01K1/024—Means for indicating or recording specially adapted for thermometers for remote indication
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/02—Means for indicating or recording specially adapted for thermometers
- G01K1/026—Means for indicating or recording specially adapted for thermometers arrangements for monitoring a plurality of temperatures, e.g. by multiplexing
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
- G01K7/20—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer in a specially-adapted circuit, e.g. bridge circuit
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K2219/00—Thermometers with dedicated analog to digital converters
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Abstract
The invention discloses a kind of polar region multiple spot cryogenic temperature sensing device and temp measuring methods, including host record unit and slave measuring unit, it is characterized in that, slave measuring unit includes temperature detecting module, data processing module and communication transmission module, further includes a kind of temperature sensing circuit in temperature detecting module；The host record unit is after the data for receiving multiple slave measuring units, all data are recorded and analyzed, the slave measuring unit is acquired by the data that temperature detecting module carries out the measurement of polar region temperature, then the data of measurement are passed into the storage and further transmitting that the data processing module carries out data, the wireless transmission of node data is carried out with host record unit by radio frequency medium eventually by communication transmission module and is exchanged.The present invention realizes the temperature measurement of polar region multiple spot low temperature, and not only ensure that higher measurement accuracy but also realized each slave can be set oneself exclusive address, without increasing additional cable.
Description
Technical field
The present invention relates to a kind of temperature measurement technology, especially a kind of polar region multiple spot cryogenic temperature sensing device.
Background technique
With the continuous development of commercial production levels, temperature measurement technology is also important in one for being increasingly becoming technical level
Index.Polar region as cold source maximum on the earth, the variations of ice sheet or sea ice thermodynamics to Global vertical datum, climate change and
Sea level variability has extreme influence, and the variation of polar region shallow-layer ice sheet and sea-ice temperature fields directly reflects temperature change and polar ice
Snow thermokinetics is directly related, is the indicator for studying Global climate change, so the essence of polar region ice and snow multiple spot continuous temperature field
It really detects extremely important.
That designs at present is used to observe the multi-point temperature observation device of sea-ice temperature fields.The thermometric platinum resistance of each layer of position needs
A piece independent signal cable is directly connect with data acquisition box, and shortcoming is increasing with measurement layer position, will lead to conducting wire
It is more, or since used temperature sensor has the lower defect of temperature measurement accuracy, surveyed so that it is unable to satisfy high-precision
Measure the demand in polar region temperature field.
Summary of the invention
Goal of the invention: a kind of polar region multiple spot cryogenic temperature sensing device and temp measuring method are provided, to solve the above problems.
Technical solution: a kind of polar region multiple spot cryogenic temperature sensing device, including host record unit and slave measuring unit,
It is characterized in that, slave measuring unit includes temperature detecting module, data processing module and communication transmission module；
Host record unit can be mainly divided into data record and data and analyze two modules, by data recordin module to from
The data of machine measuring unit transmission are recorded, and provide reasonable data support, the data for the operation of data analysis module
Analysis module optimizes analysis to the data use that the data recordin module records, and excludes abnormal data, realizes that polar region is more
The accuracy of point temperature measurement；
Temperature detecting module further includes a kind of temperature sensing circuit, carries out temperature to tested field by setting temperature sensing circuit
Multimetering, and by modulus conversion chip to temperature detection data carry out analog-to-digital conversion, select have low-power consumption standby mould
The modulus conversion chip of formula or fully powered-off mode can reduce slave power consumption, provide data for follow-up data processing；
Data processing module, in order to reduce slave power consumption, it is main using have the single-chip microcontroller of low-power consumption standby mode to data into
Row preliminary treatment, under the management of host, slave is judged after receiving data packet, when in data packet destination address with from
When machine address is identical, low-power consumption mode is exited by the serial ports interrupt routine of single-chip microcontroller and execution must to the progress of required measurement data
The transimission and storage work order wanted immediately enters low-power consumption mode after having worked；
Communication transmission module, using the communication structure of one master and multiple slaves, host, which issues instruction, adopts all slaves in synchronization
Collect temperature, then read back temperature data one by one at slave respectively, realizes the wireless transmission and friendship of data between host and slave
Change, guarantee to adopt simultaneously all temperature spots temperature value；
Temperature sensing circuit, including parallel voltage-stabilizing integrated circuit U1, operational amplifier U2:A, operational amplifier U2:B, operation are put
Big device U2:C, operational amplifier U2:D, platinum resistance RT1, resistance R1, resistance R2, resistance R3, resistance R4, resistance R5, resistance R6,
Resistance R7, resistance R8, resistance R9, resistance R10, resistance R11, resistance R12, resistance R13, resistance R14, resistance R15, resistance R16,
Resistance R17, resistance R18, potentiometer RV1, potentiometer RV2, capacitor C1, capacitor C2, capacitor C3, capacitor C4 and triode Q1, institute
The 1st pin for stating parallel voltage-stabilizing integrated circuit U1 is connect with the 3rd pin of the potentiometer RV1, the integrated electricity of the parallel voltage-stabilizing
2nd pin of the 2nd pin and the potentiometer RV1 of road U1 is grounded, the 3rd pin point of the parallel voltage-stabilizing integrated circuit U1
Not with the one of the 1st pin of the potentiometer RV1, one end of the resistance R7, one end of the resistance R1 and the resistance R2
End connection, another termination VCC voltage signal of the resistance R7, the other end of the resistance R1 respectively with the platinum resistance RT1
One end, the resistance R5 one end connection, the other end of the resistance R2 respectively with one end of the resistance R3, the resistance
One end of R6 connects, and the other end of the platinum resistance RT1 connects with one end of the other end of the resistance R3, the resistance R4 respectively
Connect, the other end of resistance R4 ground connection, the other end of the resistance R5 respectively with one end of the capacitor C1, the potentiometer
The 1st pin of RV2, the 3rd pin of the potentiometer RV2 are connected with the non-inverting input terminal of the operational amplifier U2:A, described
The other end of resistance R6 the 2nd pin and the operational amplifier with the other end of the capacitor C1, the potentiometer RV2 respectively
The non-inverting input terminal of U2:B connects, the inverting input terminal of the operational amplifier U2:A respectively with one end of the resistance R8, institute
State resistance R9 one end connection, the output end of the operational amplifier U2:A respectively with the other end of the resistance R9, the electricity
Hinder R11 one end connection, the inverting input terminal of the operational amplifier U2:B respectively with the other end of the resistance R8, the electricity
Hinder R10 one end connection, the output end of the operational amplifier U2:B respectively with the other end of the resistance R10, the resistance
One end of R12 connects, the other end of the resistance R11 respectively with one end of the capacitor C2, one end of the resistance R13 and institute
State operational amplifier U2:C inverting input terminal connection, the other end of the resistance R12 respectively with one end of the resistance R14,
One end of the capacitor C3 is connected with the non-inverting input terminal of the operational amplifier U2:C, the other end of the resistance R14 and institute
The other end for stating capacitor C3 is grounded, and the other end of the capacitor C2 is put with the other end of the resistance R13, the operation respectively
The output end of big device U2:C is connected with one end of the resistance R15, the other end and the operational amplifier of the resistance R15
The non-inverting input terminal of U2:D connects, one end of the inverting input terminal of the operational amplifier U2:D and the resistance R16, the electricity
The emitter of one end and the triode Q1 for holding C4 connects output signal, and the other end of the resistance R16 is grounded, the electricity
Hold the other end ground connection of C4, the output end of the operational amplifier U2:D is connect with one end of the resistance R17, the resistance
The other end of R17 is connect with the base stage of the triode Q1, and one end of the collector of the triode Q1 and the resistance R18 connect
It connects, another termination VCC voltage signal of the resistance R18.
According to an aspect of the present invention, the platinum resistance RT1 is platinum resistance PT1000, and change in resistance amplitude is big, thermometric
Sensitivity it is higher, field is tested to polar region and carries out continuous real time temperature measurement, and measurement data is passed at the data
It manages module and avoids the temperature of mutation by being compared with the measurement data of the temperature detecting module of multiple slave measuring units
Degree evidence guarantees comprehensive measurement to polar region temperature.
According to an aspect of the present invention, the parallel voltage-stabilizing integrated circuit U1 is parallel voltage-stabilizing integrated circuit TL431,
Play the role of zener diode in circuit, provides a stable reference voltage as input voltage for electric bridge, it is low stablizing
Guarantee high value characteristic when pressure, to protect the measuring circuit of the platinum resistance PT1000 not because high pressure generates damage.
According to an aspect of the present invention, the operational amplifier U2:A, the operational amplifier U2:B, the operation are put
Big device U2:C, the operational amplifier U2:D are operational amplifier LM324, form differential amplifier circuit, after increased drawdown signal
Export the voltage signal of desired size.
According to an aspect of the present invention, the potentiometer RV2 is linear potentiometer, adjusts potentiometer RV2 resistance value size
It can change the zero point setting of temperature.
According to an aspect of the present invention, the modulus conversion chip model ADS1232 of the temperature detecting module, it is described
The single-chip microcontroller model MSP430G2553 of data processing module.
A kind of polar region multiple spot low temperature temp measuring method is surveyed by the advantage that nonequilibrium bridge can measure consecutive variations physical quantity
Platinum resistance resistance value out goes out temperature, specific steps further according to computing the resistor value are as follows:
Step 1, electric bridge both ends input voltage UACReference voltage V as modulus conversion chip ADS1232REF, i.e. UAC= VREF,
Measurement voltage of the output voltage Δ Uo of electric bridge as modulus conversion chip ADS1232；
The resistance value data of step 2, the platinum resistance RT1 for establishing the calculation formula of bridge output voltage Δ Uo and therefrom analyzing measurement；
The calculation formula of step 21, the connection type according to electric bridge, bridge output voltage Δ Uo can further indicate that are as follows:
ΔUo= VREF [RT1/(R1+RT1)-R3/(R2+R3)] (1)
Wherein, RT1 is the resistance value of the platinum resistance RT1, and R1 is the resistance value of the resistance R1, and R2 is the resistance value of the resistance R2,
R3 is the resistance value of the resistance R3；
Step 22 learns the data ADCX that AD conversion obtains by modulus conversion chip ADS1232 databook are as follows:
ADCX=2G(223-1)ΔUo/VREF (2)
Wherein, G is gain；
Step 23 is established model according to transmission function and can be learnt:
RT1=R1{1/[R2/(R2+R3)-ADCX/2G(223-1)]-1} (3)
Wherein, due to the measurement voltage of modulus conversion chip ADS1232 can be it is ambipolar, can pass through identification ADCX symbol
Number position judges the positive and negative values of temperature.
According to an aspect of the present invention, in the case that temperature is certain, this measurement resistance value method is not by input voltage wave
Dynamic influence, so as to more accurately calculate the resistance value of platinum resistance RT1.
According to an aspect of the present invention, the measurement accuracy of platinum resistance RT1 only with the composition resistance R1 of bridge arm, resistance R2,
Resistance R3 is related with AD conversion module precision, and resistance R1, resistance R2, resistance R3 use precision resister, and pass through single-chip microcontroller
Algorithm in MSP430G2553 carries out compensation for calibrating errors, so temperature detecting module measurement accuracy with higher.
The utility model has the advantages that the present invention is able to solve in the prior art during measuring polar region temperature field because with measurement layer position
Increase, cause conducting wire more, or due to used temperature sensor have the lower defect of temperature measurement accuracy.By non-flat
The advantage that weighing apparatus electric bridge can measure consecutive variations physical quantity measures platinum resistance resistance value, goes out temperature further according to computing the resistor value, to have
There is higher measurement accuracy.Specifically it will be described below.
Detailed description of the invention
Fig. 1 is structural block diagram of the invention.
Fig. 2 is the schematic diagram of temperature sensing circuit of the invention.
Specific embodiment
As shown in Figure 1, in this embodiment, a kind of polar region multiple spot cryogenic temperature sensing device, including host record unit
With slave measuring unit, which is characterized in that slave measuring unit includes temperature detecting module, data processing module and communication transfer
Module；
Host record unit can be mainly divided into data record and data and analyze two modules, by data recordin module to from
The data of machine measuring unit transmission are recorded, and provide reasonable data support, the data for the operation of data analysis module
Analysis module optimizes analysis to the data use that the data recordin module records, and excludes abnormal data, realizes that polar region is more
The accuracy of point temperature measurement；
Temperature detecting module further includes a kind of temperature sensing circuit, carries out temperature to tested field by setting temperature sensing circuit
Multimetering, and by modulus conversion chip to temperature detection data carry out analog-to-digital conversion, select have low-power consumption standby mould
The modulus conversion chip of formula or fully powered-off mode can reduce slave power consumption, provide data for follow-up data processing；
Data processing module, in order to reduce slave power consumption, it is main using have the single-chip microcontroller of low-power consumption standby mode to data into
Row preliminary treatment, under the management of host, slave is judged after receiving data packet, when in data packet destination address with from
When machine address is identical, low-power consumption mode is exited by the serial ports interrupt routine of single-chip microcontroller and execution must to the progress of required measurement data
The transimission and storage work order wanted immediately enters low-power consumption mode after having worked；
Communication transmission module, using the communication structure of one master and multiple slaves, host, which issues instruction, adopts all slaves in synchronization
Collect temperature, then read back temperature data one by one at slave respectively, realizes the wireless transmission and friendship of data between host and slave
Change, guarantee to adopt simultaneously all temperature spots temperature value；
As shown in Fig. 2, temperature sensing circuit, including parallel voltage-stabilizing integrated circuit U1, operational amplifier U2:A, operational amplifier
U2:B, operational amplifier U2:C, operational amplifier U2:D, platinum resistance RT1, resistance R1, resistance R2, resistance R3, resistance R4, resistance
R5, resistance R6, resistance R7, resistance R8, resistance R9, resistance R10, resistance R11, resistance R12, resistance R13, resistance R14, resistance
R15, resistance R16, resistance R17, resistance R18, potentiometer RV1, potentiometer RV2, capacitor C1, capacitor C2, capacitor C3, capacitor C4 and
Triode Q1, the 1st pin of the parallel voltage-stabilizing integrated circuit U1 are connect with the 3rd pin of the potentiometer RV1, the parallel connection
2nd pin of the 2nd pin and the potentiometer RV1 of integrated regulator U1 is grounded, the parallel voltage-stabilizing integrated circuit U1
The 3rd pin respectively with the 1st pin of the potentiometer RV1, one end of the resistance R7, one end of the resistance R1 and described
One end of resistance R2 connects, another termination VCC voltage signal of the resistance R7, the other end of the resistance R1 respectively with it is described
One end of platinum resistance RT1, the resistance R5 one end connection, the other end of the resistance R2 respectively with the resistance R3 one
End, the resistance R6 one end connection, the other end of the platinum resistance RT1 respectively with the other end of the resistance R3, the electricity
Hinder R4 one end connection, the resistance R4 the other end ground connection, the other end of the resistance R5 respectively with the capacitor C1 one
End, the 1st pin of the potentiometer RV2, the potentiometer RV2 the 3rd pin and the operational amplifier U2:A it is same mutually defeated
Enter end connection, the other end of the resistance R6 respectively with the other end of the capacitor C1, the potentiometer RV2 the 2nd pin and
The non-inverting input terminal of the operational amplifier U2:B connects, the inverting input terminal of the operational amplifier U2:A respectively with the electricity
One end of R8, one end connection of the resistance R9 are hindered, the output end of the operational amplifier U2:A is respectively with the resistance R9's
One end connection of the other end, the resistance R11, the inverting input terminal of the operational amplifier U2:B is respectively with the resistance R8's
One end connection of the other end, the resistance R10, the output end of the operational amplifier U2:B are another with the resistance R10 respectively
One end, the resistance R12 one end connection, the other end of the resistance R11 respectively with one end of the capacitor C2, the resistance
One end of R13 is connected with the inverting input terminal of the operational amplifier U2:C, the other end of the resistance R12 respectively with the electricity
One end of one end, the capacitor C3 for hindering R14 is connected with the non-inverting input terminal of the operational amplifier U2:C, the resistance R14
The other end of the other end and the capacitor C3 be grounded, the other end of the capacitor C2 is another with the resistance R13 respectively
It holds, the output end of the operational amplifier U2:C is connected with one end of the resistance R15, the other end of the resistance R15 and institute
State the non-inverting input terminal connection of operational amplifier U2:D, the inverting input terminal of the operational amplifier U2:D and the resistance R16
One end, one end of the capacitor C4 and the emitter of the triode Q1 connect output signal, the other end of the resistance R16
It is grounded, the other end ground connection of the capacitor C4, one end of the output end of the operational amplifier U2:D and the resistance R17 connect
It connects, the other end of the resistance R17 is connect with the base stage of the triode Q1, the collector and the resistance of the triode Q1
One end of R18 connects, another termination VCC voltage signal of the resistance R18.
In a further embodiment, the platinum resistance RT1 is platinum resistance PT1000, and change in resistance amplitude is big, thermometric
Sensitivity is higher, is tested field to polar region and carries out continuous real time temperature measurement, and measurement data is passed to the data processing
Module avoids the temperature of mutation by being compared with the measurement data of the temperature detecting module of multiple slave measuring units
Data guarantee comprehensive measurement to polar region temperature.
In a still further embodiment, the platinum resistance RT1 and the resistance R1, the resistance R2 and the resistance R3
Nonequilibrium bridge is formed, platinum resistance RT1 resistance value is measured by the advantage that nonequilibrium bridge can measure consecutive variations physical quantity, then
Go out temperature according to computing the resistor value.
In a further embodiment, the parallel voltage-stabilizing integrated circuit U1 is parallel voltage-stabilizing integrated circuit TL431, in electricity
Play the role of zener diode in road, provides a stable reference voltage as input voltage, in stabilizing low voltage for electric bridge
When guarantee high value characteristic, to protect the measuring circuit of the platinum resistance PT1000 not because high pressure generates damage.
In a still further embodiment, it is adjusted and is produced using the parallel voltage-stabilizing integrated circuit U1 and potentiometer VR1
Raw reference power source.
In a further embodiment, the operational amplifier U2:A, the operational amplifier U2:B, the operation amplifier
Device U2:C, the operational amplifier U2:D are operational amplifier LM324, form differential amplifier circuit, defeated after increased drawdown signal
The voltage signal of desired size out.
In a still further embodiment, when the resistance value of the platinum resistance RT1 and the resistance value of the potentiometer VR2 not
When equal, electric bridge exports one mV grades of pressure difference signal, this pressure difference signal passes through the operational amplifier U2:A, the operation
The voltage signal of desired size is exported after amplifier U2:B, the operational amplifier U2:C, operational amplifier U2:D amplification,
The signal can directly connect modulus conversion chip.
In a still further embodiment, the resistance value of the resistance value of resistance R5 described in differential amplifier circuit and the resistance R6
Equal, the resistance value of the resistance R9 is equal with the resistance value of the resistance R10.
In a further embodiment, the potentiometer RV2 is linear potentiometer, and adjusting potentiometer RV2 resistance value size can
To change the zero point setting of temperature.
In a further embodiment, the modulus conversion chip model ADS1232 of the temperature detecting module, the number
According to the single-chip microcontroller model MSP430G2553 of processing module.
A kind of polar region multiple spot low temperature temp measuring method is surveyed by the advantage that nonequilibrium bridge can measure consecutive variations physical quantity
Platinum resistance resistance value out goes out temperature, specific steps further according to computing the resistor value are as follows:
Step 1, electric bridge both ends input voltage UACReference voltage V as modulus conversion chip ADS1232REF, i.e. UAC= VREF,
Measurement voltage of the output voltage Δ Uo of electric bridge as modulus conversion chip ADS1232；
The resistance value data of step 2, the platinum resistance RT1 for establishing the calculation formula of bridge output voltage Δ Uo and therefrom analyzing measurement；
The calculation formula of step 21, the connection type according to electric bridge, bridge output voltage Δ Uo can further indicate that are as follows:
ΔUo= VREF [RT1/(R1+RT1)-R3/(R2+R3)] (1)
Wherein, RT1 is the resistance value of the platinum resistance RT1, and R1 is the resistance value of the resistance R1, and R2 is the resistance value of the resistance R2,
R3 is the resistance value of the resistance R3；
Step 22 learns the data ADCX that AD conversion obtains by modulus conversion chip ADS1232 databook are as follows:
ADCX=2G(223-1)ΔUo/VREF (2)
Wherein, G is gain；
Step 23 is established model according to transmission function and can be learnt:
RT1=R1{1/[R2/(R2+R3)-ADCX/2G(223-1)]-1} (3)
Wherein, due to the measurement voltage of modulus conversion chip ADS1232 can be it is ambipolar, can pass through identification ADCX symbol
Number position judges the positive and negative values of temperature.
In a further embodiment, in the case that temperature is certain, this measurement resistance value method is not by input voltage fluctuation
Influence, so as to more accurately calculate the resistance value of platinum resistance RT1.
In a further embodiment, the measurement accuracy of platinum resistance RT1 only with composition bridge arm resistance R1, resistance R2, electricity
It is related with AD conversion module precision to hinder R3, resistance R1, resistance R2, resistance R3 use precision resister, and pass through single-chip microcontroller
Algorithm in MSP430G2553 carries out compensation for calibrating errors, so temperature detecting module measurement accuracy with higher.
In short, the invention has the following advantages that being surveyed by the advantage that nonequilibrium bridge can measure consecutive variations physical quantity
Platinum resistance resistance value out goes out temperature further according to computing the resistor value, thus measurement accuracy with higher.By more between host and slave
Machine communication modes, slave use low-power scm MSP430G2553,24 high precision analogue conversion chip ADS1232 and platinum
Resistance, not only ensure that higher measurement accuracy but also realized each slave can be set oneself exclusive address, pass through channel radio
News exchange data, without increasing additional cable, slave number can accordingly be changed depending on fathoming and counting, and have pole
Big flexibility.
It is further to note that specific technical features described in the above specific embodiments, in not lance
In the case where shield, it can be combined in any appropriate way.In order to avoid unnecessary repetition, the present invention to it is various can
No further explanation will be given for the combination of energy.
Claims (9)
1. a kind of polar region multiple spot cryogenic temperature sensing device, including host record unit and slave measuring unit, which is characterized in that
Slave measuring unit includes temperature detecting module, data processing module and communication transmission module；
Host record unit can be mainly divided into data record and data and analyze two modules, by data recordin module to from
The data of machine measuring unit transmission are recorded, and provide reasonable data support, the data for the operation of data analysis module
Analysis module optimizes analysis to the data use that the data recordin module records, and excludes abnormal data, realizes that polar region is more
The accuracy of point temperature measurement；
Temperature detecting module further includes a kind of temperature sensing circuit, carries out temperature to tested field by setting temperature sensing circuit
Multimetering, and by modulus conversion chip to temperature detection data carry out analog-to-digital conversion, select have low-power consumption standby mould
The modulus conversion chip of formula or fully powered-off mode can reduce slave power consumption, provide data for follow-up data processing；
Data processing module, in order to reduce slave power consumption, it is main using have the single-chip microcontroller of low-power consumption standby mode to data into
Row preliminary treatment, under the management of host, slave is judged after receiving data packet, when in data packet destination address with from
When machine address is identical, low-power consumption mode is exited by the serial ports interrupt routine of single-chip microcontroller and execution must to the progress of required measurement data
The transimission and storage work order wanted immediately enters low-power consumption mode after having worked；
Communication transmission module, using the communication structure of one master and multiple slaves, host, which issues instruction, adopts all slaves in synchronization
Collect temperature, then read back temperature data one by one at slave respectively, realizes the wireless transmission and friendship of data between host and slave
Change, guarantee to adopt simultaneously all temperature spots temperature value；
Temperature sensing circuit, including parallel voltage-stabilizing integrated circuit U1, operational amplifier U2:A, operational amplifier U2:B, operation are put
Big device U2:C, operational amplifier U2:D, platinum resistance RT1, resistance R1, resistance R2, resistance R3, resistance R4, resistance R5, resistance R6,
Resistance R7, resistance R8, resistance R9, resistance R10, resistance R11, resistance R12, resistance R13, resistance R14, resistance R15, resistance R16,
Resistance R17, resistance R18, potentiometer RV1, potentiometer RV2, capacitor C1, capacitor C2, capacitor C3, capacitor C4 and triode Q1, institute
The 1st pin for stating parallel voltage-stabilizing integrated circuit U1 is connect with the 3rd pin of the potentiometer RV1, the integrated electricity of the parallel voltage-stabilizing
2nd pin of the 2nd pin and the potentiometer RV1 of road U1 is grounded, the 3rd pin point of the parallel voltage-stabilizing integrated circuit U1
Not with the one of the 1st pin of the potentiometer RV1, one end of the resistance R7, one end of the resistance R1 and the resistance R2
End connection, another termination VCC voltage signal of the resistance R7, the other end of the resistance R1 respectively with the platinum resistance RT1
One end, the resistance R5 one end connection, the other end of the resistance R2 respectively with one end of the resistance R3, the resistance
One end of R6 connects, and the other end of the platinum resistance RT1 connects with one end of the other end of the resistance R3, the resistance R4 respectively
Connect, the other end of resistance R4 ground connection, the other end of the resistance R5 respectively with one end of the capacitor C1, the potentiometer
The 1st pin of RV2, the 3rd pin of the potentiometer RV2 are connected with the non-inverting input terminal of the operational amplifier U2:A, described
The other end of resistance R6 the 2nd pin and the operational amplifier with the other end of the capacitor C1, the potentiometer RV2 respectively
The non-inverting input terminal of U2:B connects, the inverting input terminal of the operational amplifier U2:A respectively with one end of the resistance R8, institute
State resistance R9 one end connection, the output end of the operational amplifier U2:A respectively with the other end of the resistance R9, the electricity
Hinder R11 one end connection, the inverting input terminal of the operational amplifier U2:B respectively with the other end of the resistance R8, the electricity
Hinder R10 one end connection, the output end of the operational amplifier U2:B respectively with the other end of the resistance R10, the resistance
One end of R12 connects, the other end of the resistance R11 respectively with one end of the capacitor C2, one end of the resistance R13 and institute
State operational amplifier U2:C inverting input terminal connection, the other end of the resistance R12 respectively with one end of the resistance R14,
One end of the capacitor C3 is connected with the non-inverting input terminal of the operational amplifier U2:C, the other end of the resistance R14 and institute
The other end for stating capacitor C3 is grounded, and the other end of the capacitor C2 is put with the other end of the resistance R13, the operation respectively
The output end of big device U2:C is connected with one end of the resistance R15, the other end and the operational amplifier of the resistance R15
The non-inverting input terminal of U2:D connects, one end of the inverting input terminal of the operational amplifier U2:D and the resistance R16, the electricity
The emitter of one end and the triode Q1 for holding C4 connects output signal, and the other end of the resistance R16 is grounded, the electricity
Hold the other end ground connection of C4, the output end of the operational amplifier U2:D is connect with one end of the resistance R17, the resistance
The other end of R17 is connect with the base stage of the triode Q1, and one end of the collector of the triode Q1 and the resistance R18 connect
It connects, another termination VCC voltage signal of the resistance R18.
2. a kind of polar region multiple spot cryogenic temperature sensing device according to claim 1, which is characterized in that the platinum resistance
RT1 is platinum resistance PT1000, and change in resistance amplitude is big, and the sensitivity of thermometric is higher, and it is continuous real-time to be tested field progress to polar region
Temperature measurement, and measurement data is passed into the data processing module, pass through the temperature detection with multiple slave measuring units
The measurement data of module is compared, and avoids the temperature data of mutation, guarantees comprehensive measurement to polar region temperature.
3. a kind of polar region multiple spot cryogenic temperature sensing device according to claim 1, which is characterized in that the parallel voltage-stabilizing
Integrated circuit U1 is parallel voltage-stabilizing integrated circuit TL431, plays the role of zener diode in circuit, provides one for electric bridge
Stable reference voltage guarantees high value characteristic in stabilizing low voltage, to protect the platinum resistance as input voltage
The measuring circuit of PT1000 is not because high pressure generates damage.
4. a kind of polar region multiple spot cryogenic temperature sensing device according to claim 1, which is characterized in that the operation amplifier
Device U2:A, the operational amplifier U2:B, the operational amplifier U2:C, the operational amplifier U2:D are operational amplifier
LM324 forms differential amplifier circuit, the voltage signal of desired size is exported after increased drawdown signal.
5. a kind of polar region multiple spot cryogenic temperature sensing device according to claim 1, which is characterized in that the potentiometer
RV2 is linear potentiometer, and adjusting potentiometer RV2 resistance value size can change the zero point setting of temperature.
6. a kind of polar region multiple spot cryogenic temperature sensing device according to claim 1, which is characterized in that the temperature detection
The modulus conversion chip model ADS1232 of module, the single-chip microcontroller model MSP430G2553 of the data processing module.
7. a kind of polar region multiple spot low temperature temp measuring method, which is characterized in that measurement platinum resistance RT1 resistance value, specific steps are as follows:
Step 1, electric bridge both ends input voltage UACReference voltage V as modulus conversion chip ADS1232REF, i.e. UAC= VREF, electricity
Measurement voltage of the output voltage Δ Uo of bridge as modulus conversion chip ADS1232；
The resistance value data of step 2, the platinum resistance RT1 for establishing the calculation formula of bridge output voltage Δ Uo and therefrom analyzing measurement；
The calculation formula of step 21, the connection type according to electric bridge, bridge output voltage Δ Uo can further indicate that are as follows:
ΔUo= VREF [RT1/(R1+RT1)-R3/(R2+R3)] (1)
Wherein, RT1 is the resistance value of the platinum resistance RT1, and R1 is the resistance value of the resistance R1, and R2 is the resistance value of the resistance R2,
R3 is the resistance value of the resistance R3；
Step 22 learns the data ADCX that AD conversion obtains by modulus conversion chip ADS1232 databook are as follows:
ADCX=2G(223-1)ΔUo/VREF (2)
Wherein, G is gain；
Step 23 is established model according to transmission function and can be learnt:
RT1=R1{1/[R2/(R2+R3)-ADCX/2G(223-1)]-1} (3)
Wherein, due to the measurement voltage of modulus conversion chip ADS1232 can be it is ambipolar, can pass through identification ADCX symbol
Number position judges the positive and negative values of temperature.
8. a kind of polar region multiple spot low temperature temp measuring method according to claim 7, which is characterized in that the certain situation of temperature
Under, this measurement resistance value method is not influenced by input voltage fluctuation, so as to more accurately calculate the resistance of platinum resistance RT1
Value.
9. a kind of polar region multiple spot low temperature temp measuring method according to claim 7, which is characterized in that the measurement of platinum resistance RT1
Precision is only related with the resistance R1 of composition bridge arm, resistance R2, resistance R3 and AD conversion module precision, resistance R1, resistance R2, resistance
R3 uses precision resister, and carries out compensation for calibrating errors by the algorithm in single-chip microcontroller MSP430G2553, so temperature detection mould
Block measurement accuracy with higher.
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