CN110303383A - A kind of magnetorheological auxiliary atmosphere plasma polishing silicon-based component method - Google Patents

A kind of magnetorheological auxiliary atmosphere plasma polishing silicon-based component method Download PDF

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Publication number
CN110303383A
CN110303383A CN201910529967.1A CN201910529967A CN110303383A CN 110303383 A CN110303383 A CN 110303383A CN 201910529967 A CN201910529967 A CN 201910529967A CN 110303383 A CN110303383 A CN 110303383A
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CN
China
Prior art keywords
magnetorheological
polishing
plasma
gas
silicon
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN201910529967.1A
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Chinese (zh)
Inventor
宋力
徐学科
顿爱欢
王哲
吴伦哲
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Shanghai Hengyi Optical Precision Machinery Co ltd
Shanghai Institute of Optics and Fine Mechanics of CAS
Original Assignee
Shanghai Hengyi Optical Precision Machinery Co ltd
Shanghai Institute of Optics and Fine Mechanics of CAS
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Application filed by Shanghai Hengyi Optical Precision Machinery Co ltd, Shanghai Institute of Optics and Fine Mechanics of CAS filed Critical Shanghai Hengyi Optical Precision Machinery Co ltd
Priority to CN201910529967.1A priority Critical patent/CN110303383A/en
Publication of CN110303383A publication Critical patent/CN110303383A/en
Withdrawn legal-status Critical Current

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B29/00Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)

Abstract

The present invention relates to silicon-based optical element surface ultra-smooth precision processing technology fields, and in particular to a kind of magnetorheological auxiliary atmosphere plasma polishing silicon-based component processing method.When solving the processing of existing atmosphere plasma, surface generates residue, causes optical element surface quality degradation problem.First with atmosphere plasma using He as carrier gas, CF4For reaction gas, O2Silicon-based component is processed for auxiliary gas, after generating residue, element surface is polished with magnetorheological, generated residue is quickly removed by flexible abrasive material in magnetic current liquid, realizes the high efficiency polishing of silicon-based optical element.

Description

A kind of magnetorheological auxiliary atmosphere plasma polishing silicon-based component method
Technical field
The present invention relates to silicon-based optical element surface ultra-smooth precision processing technology fields, and in particular to a kind of magnetorheological auxiliary Atmosphere plasma is helped to polish silica-base material method.When solving the polishing of existing atmosphere plasma, surface generates residue, causes The problem of making optical element surface quality degradation.
Background technique
With the progress of modern science and technology, more stringent requirements are proposed to material surface for contemporary optics and opto-electronics, Thereupon, how lossless, quickly and superfinishing thickly rapidoprint becomes important research topic, and fused quartz, silicon carbide Equal silica-base materials have a large amount of application in modern optical super-precision surface, and tradition polishing silica-base material has there are low efficiency to be drawn The problems such as trace, such as SiC material is due to stable chemical performance, that thermal coefficient is high, thermal expansion coefficient is small, wear-resisting property is good etc. is excellent Characteristic has special application in fields such as aerospace, microelectromechanical systems, these applications are determined to its machined surface shape The high request of precision and surface quality, Ultraprecise polished in processing technology are to guarantee that surface to be machined realizes ultra-smooth, intact It falls into, undamaged key.But the processing of nano-precision surface of SiC is a global problem, the Mohs' hardness of silicon carbide Up to 9.25, optical manufacturing is extremely difficult, while traditional processing silicon-based component method is still unavoidable from traditional machinery Contact processes intrinsic defect, and contact type mechanical processes the surface breakdown that can all cause material to some extent, is formed micro- Crackle causes the lattice of material to disturb, to influence the surface quality of reflecting mirror, reduces its surface breakdown threshold value.
Atmosphere plasma polishing is under atmospheric pressure, using the radio-frequency voltage applied between the electrodes, so that fluorine-containing work Property gas excitation in being loaded into the plasma atmosphere that is excited of gas He generate active particle, occur with the atom of workpiece surface Chemical reaction generates volatile products, realizes and processes to the Contactless high-efficiency of silicon-based optical part, but due in process Introduce reaction gas CF4, the active fluorine ions being excited largely react: SiC+4F*+2O=SiF4↑+CO2↑, Si+4F*= SiF4↑、SiO2+ 4F*+=SiF4↑+O2↑ still there is small part fluorine ion and carbon atom commissure to remain in workpiece table for fluorocarbons Face, it is difficult to remove, influence element roughness, this residue can be removed in such a way that magnetorheological auxiliary polishes.
By retrieval find, it is existing removal atmosphere plasma processing after residue method mainly pass through uniaxial machine into The global polishing of row, this processing method removal efficiency is low and can destroy atmosphere plasma processing shape below.Magnetorheological auxiliary is big Gas plasma polishing removal efficiency is high and does not destroy workpiece face shape, proposes a kind of highly-efficient processing silica-base material accordingly and can be quickly Remove the process of surface residue.
Summary of the invention
It is an object of the invention to overcome the above-mentioned prior art, a kind of magnetorheological auxiliary atmosphere plasma polishing is provided The method of silica-base material carries out efficient repairing to silica-base material in conjunction with atmosphere plasma polishing and Magnetorheological Polishing two ways Shape, while can quickly remove the residue generated in process.
Step 1: workpiece to be processed is placed on atmospheric plasma apparatus processing platform, opens atmosphere plasma, Using He as carrier gas, CF4Gas is reaction gas, O2To assist gas, wherein He range of flow: 1-5L/min, CF4Range of flow: 10-100mL/min、O2Range of flow: 5-100mL/min, firing power 40-150W generate plasma jet, and chemistry occurs Reaction: SiC+4F*+2O=SiF4↑+CO2↑/Si+4F*=SiF4 ↑/SiO2+ 4F*+=SiF4↑+O2↑, generation reactant is gas Volatilization, closes power supply and all gas after process finishing, workpiece roughness rms1 and face shape pv1 after detection processing, atmosphere etc. from Workpiece surface is generated because gas CF4 reacts the residue not exclusively introduced after daughter processing;
Step 2: the workpiece after atmosphere plasma is processed is moved on magnetorheological devices workbench, selects cerium oxide Or the flexible abrasive material that the workpiece to be processed that compares is soft, polish wheel load depth range: 0.2-0.8mm, open it is magnetorheological, be allowed to along it is equal from Daughter flame machining locus polishes workpiece to be processed surface.
2, the magnetorheological auxiliary atmosphere plasma of one kind according to claim 1 polishes silicon-based component method, special Sign is that the step 2 is specifically that polishing powder is added in magnetorheological fluid container, opens magnetic rheologic magnet, opens polishing Wheel after polishing wheel is turned over, opens peristaltic pump, and recover begins to recycle magnetorheological fluid, finally opens centrifugal pump and drives nozzle to throwing Spray into magnetorheological fluid on halo, polishing pressure depth is 0.4mm, polishing wheel along plasma flame machining locus to optical element surface into Row uniform polish removes the residue during plasma process.
3, the magnetorheological auxiliary atmosphere plasma of one kind according to claim 1 polishes silicon-based component method, special Sign is that the silica-base material includes silicon carbide, fused quartz or silicon wafer.
Compared with prior art, the beneficial effects of the present invention are: magnetorheological auxiliary atmosphere plasma polishes silica-base material Method be able to achieve fast polishing silicon-based optical element and the residue that leaves after atmosphere plasma polishing can be removed, realize silicon The high efficiency Ultra-precision Turning of sill.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of atmospheric plasma apparatus in the present invention.
Fig. 2 is the structural schematic diagram of magnetorheological finishing device in the present invention
In figure: 1-1: radio-frequency power supply, 1-2: electrode, 1-3: air inlet, 1-4: nozzle, 1-5: plasma jet, 2-1: Magnetorheological fluid container, 2-2: peristaltic pump, 2-3: electromagnet, 2-4: recover, 2-5: polishing wheel, 2-6: nozzle, 2-7: centrifugal pump.
Specific embodiment
Below with reference to embodiment polishing silicon carbide (SiC), the invention will be further described, but should not limit this hair with this Bright protection scope.
Present approach provides a kind of group technology processing methods of new shape, in conjunction with atmosphere plasma polishing and magnetic current Become polishing, efficient correction of the flank shape can be carried out to silica-base material, while can quickly remove the residue generated in process.
Below in conjunction with the attached drawing of magnetorheological auxiliary atmosphere plasma polishing silica-base material, to the group technology of this new shape Processing method carries out clear, system elaboration, its method and step are as follows:
Step 1: workpiece to be processed is placed on atmospheric plasma apparatus platform, open precisely to knife to workpiece Atmosphere plasma radio-frequency power supply 1-1 is opened, carrier gas He, flow 3L/min are passed through in air inlet 1-3;Reaction gas CF4, stream Amount is 30mL/min;Assist gas O2, flow 10mL/min, by air inlet, apply power is the mixed gas of composition 65W.Diameter 5mm, long 965mm, the aluminum alloy anode 1-2 of discharge end parts chamfering diameter 3mm are selected, generates plasma at its tip Body flame forms plasma jet 1-5 by nozzle 1-4, and atmosphere plasma jet stream removes the high etching of SiC ceramic material, The surface and subsurface defect that quickly removal SiC optical element generates in earlier processing steps, carry out optical element surface Etching polishing.Power supply and gas are closed after the completion of polishing.SiC workpiece roughness rms1 and face shape pv1 after detection processing, atmosphere etc. Gas ions are 3.6 × 10 to SiC high etching removal rate-3mm3/ min, workpiece surface generates residual because of reaction gas CF after processing4 React the residue not exclusively introduced.
Step 2: the workpiece after atmosphere plasma is processed is moved on magnetorheological devices workbench, precisely to knife after, Polishing powder cerium oxide is added in magnetorheological fluid container 2-1, opens magnetic rheologic magnet 2-3, opens polishing wheel 2-5, polishing wheel After turning over, peristaltic pump 2-2 is opened, recover 2-4 starts to recycle magnetorheological fluid, finally opens centrifugal pump 2-7 and drives nozzle 2-6 Magnetorheological fluid is sprayed on polishing wheel, polishing pressure depth is 0.4mm.Polishing wheel is along plasma flame machining locus to optical element table Face carries out uniform polish, removes the residue during plasma process, and workpiece detects discovery fluorine carbon with XPS after magnetorheological processing Chemical combination residue has been removed, after detect the face roughness rms2 shape pv2, after residue is gone out, roughness rms2 is compared with rms1 Reduce, because being polished using flexible abrasive material, pv1 is identical as pv2 after processing twice, is gone during removal of residue not with magnetorheological It is broken to change face shape.Entire processing process has realized the efficient polishing of SiC optical ceramics element.
Magnetorheological auxiliary atmosphere plasma described in this patent polishes silicon-based optical element approach, by it is actual it is equal from Daughter polishing experiments, polishing efficiency and surface roughness are much higher than traditional atmosphere plasma polishing method.

Claims (3)

1. a kind of method of magnetorheological auxiliary atmosphere plasma polishing silica-base material, it is characterized in that the polishing method includes following Step:
Step 1: workpiece to be processed is placed on atmospheric plasma apparatus processing platform, atmosphere plasma is opened, with He For carrier gas, CF4Gas is reaction gas, O2To assist gas, wherein He range of flow: 1-5L/min, CF4Range of flow: 10- 100mL/min、O2Range of flow: 5-100mL/min, firing power 40-150W generate plasma jet, and it is anti-that chemistry occurs It answers: SiC+4F*+2O=SiF4↑+CO2↑, Si+4F*=SiF4↑, SiO2+4F*+=SiF4↑+O2↑, it generates reactant and is waved for gas It sends out, power supply and all gas, workpiece roughness rms1 and face shape pv1 after detection processing, atmospheric plasma is closed after process finishing Workpiece surface is generated because of gas CF after body processing4React the residue not exclusively introduced;
Step 2: the workpiece after atmosphere plasma is processed is moved on magnetorheological devices workbench, selects cerium oxide or phase The soft flexible abrasive material of workpiece to be processed is compared, wheel load depth range: 0.2-0.8mm is polished, unlatching is magnetorheological, is allowed to along plasma Flame machining locus polishes workpiece to be processed surface.
2. the magnetorheological auxiliary atmosphere plasma of one kind according to claim 1 polishes silicon-based component method, feature exists In the step 2 is specifically that polishing powder is added in magnetorheological fluid container, opens magnetic rheologic magnet, opens polishing wheel, is thrown After halo is turned over, peristaltic pump is opened, recover begins to recycle magnetorheological fluid, finally opens centrifugal pump driving nozzle on polishing wheel Magnetorheological fluid is sprayed into, polishing pressure depth is 0.4mm, and polishing wheel carries out optical element surface along plasma flame machining locus uniform Polishing removes the residue during plasma process.
3. the magnetorheological auxiliary atmosphere plasma of one kind according to claim 1 polishes silicon-based component method, feature exists In the silica-base material includes silicon carbide, fused quartz or silicon wafer.
CN201910529967.1A 2019-06-19 2019-06-19 A kind of magnetorheological auxiliary atmosphere plasma polishing silicon-based component method Withdrawn CN110303383A (en)

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
CN111515769A (en) * 2020-05-18 2020-08-11 中国科学院上海光学精密机械研究所 Method for polishing silicon carbide reflector by using small grinding head to assist atmosphere plasma
CN111590395A (en) * 2020-04-29 2020-08-28 中国科学院上海光学精密机械研究所 Processing method of ultrathin optical element

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Publication number Priority date Publication date Assignee Title
JP5913154B2 (en) * 2013-02-28 2016-04-27 株式会社栗本鐵工所 Magnetorheological fluid and clutch using the same
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CN105643394A (en) * 2016-01-14 2016-06-08 长春设备工艺研究所 High-efficiency and high-precision advanced manufacturing technology process for medium or large caliber aspherical optical element
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111590395A (en) * 2020-04-29 2020-08-28 中国科学院上海光学精密机械研究所 Processing method of ultrathin optical element
CN111515769A (en) * 2020-05-18 2020-08-11 中国科学院上海光学精密机械研究所 Method for polishing silicon carbide reflector by using small grinding head to assist atmosphere plasma

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Application publication date: 20191008