CN110297596A - Storage equipment with wide operating temperature range - Google Patents
Storage equipment with wide operating temperature range Download PDFInfo
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- CN110297596A CN110297596A CN201810236824.7A CN201810236824A CN110297596A CN 110297596 A CN110297596 A CN 110297596A CN 201810236824 A CN201810236824 A CN 201810236824A CN 110297596 A CN110297596 A CN 110297596A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/062—Securing storage systems
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0655—Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
- G06F3/0659—Command handling arrangements, e.g. command buffers, queues, command scheduling
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0673—Single storage device
- G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
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Abstract
The application provides the storage equipment with wide operating temperature range.The method of storage device processes read command includes: to issue the first read command to nonvolatile memory according to the read access command of host；Receive the first data read according to the first read command；If there is not repairable mistake in the first data, it is determined that read operation parameter；The second read command is issued to nonvolatile memory, the second read command depends on read operation parameter, and the second read command and the first read command access identical physical address；Receive the second data read according to the second read command, the reading result as read access command.
Description
Technical field
This application involves storage equipment, more particularly to the storage equipment with wide operating temperature range.
Background technique
Fig. 1 illustrates the block diagram of solid storage device.Solid storage device 102 is coupled with host, for mentioning for host
For storage capacity.Host can be coupled in several ways between solid storage device 102, and coupled modes include but is not limited to
For example, by SATA (Serial Advanced Technology Attachment, Serial Advanced Technology Attachment), SCSI
(Small Computer System Interface, small computer system interface), SAS (Serial Attached
SCSI, Serial Attached SCSI (SAS)), IDE (Integrated Drive Electronics, integrated drive electronics), USB
(Universal Serial Bus, universal serial bus), PCIE (Peripheral Component Interconnect
Express, PCIe, high speed peripheral component interconnection), NVMe (NVM Express, high speed non-volatile memory), Ethernet, optical fiber it is logical
Road, cordless communication network etc. connect host and solid storage device 102.Host, which can be, to be set through the above way with storage
The standby information processing equipment communicated, for example, personal computer, tablet computer, server, portable computer, network exchange
Machine, router, cellular phone, personal digital assistant etc..Storing equipment 102 includes interface 103, control unit 104, one or more
A NVM chip 105 and DRAM (Dynamic Random Access Memory, dynamic RAM) 110.
Nand flash memory, phase transition storage, FeRAM (Ferroelectric RAM, ferroelectric memory), MRAM (Magnetic
Random Access Memory, magnetoresistive memory), RRAM (Resistive Random Access Memory, resistance-change memory
Device) etc. be common NVM.
Interface 103 can be adapted to for example, by the side such as SATA, IDE, USB, PCIE, NVMe, SAS, Ethernet, optical-fibre channel
Formula and host exchanging data.
Control unit 104 is used to control the data transmission between interface 103, NVM chip 105 and DRAM 110, also
For storage management, host logical address to flash memory physical address map, erasure balance, bad block management etc..Control unit 104 can
It is realized by the various ways of software, hardware, firmware or combinations thereof, for example, control unit 104 can be FPGA (Field-
Programmable gate array, field programmable gate array), ASIC (Application Specific
Integrated Circuit, application specific integrated circuit) or a combination thereof form.Control unit 104 also may include place
Device or controller are managed, software is executed in processor or controller and carrys out the hardware of manipulation and control component 104 to handle IO
(Input/Output) it orders.Control unit 104 is also coupled to DRAM 110, and may have access to the data of DRAM 110.?
DRAM can store the data of the I/O command of FTL table and/or caching.
Control unit 104 includes flash interface controller (or being Media Interface Connector controller, flash memory channel controller), is dodged
It deposits interface controller and is coupled to NVM chip 105, and sent out in a manner of the interface protocol to follow NVM chip 105 to NVM chip 105
It orders out, to operate NVM chip 105, and receives the command execution results exported from NVM chip 105.Known NVM chip connects
Mouth agreement includes " Toggle ", " ONFI " etc..
Memory target (Target) is shared CE (Chip Enable, chip are enabled) signal in nand flash memory encapsulation
One or more logic units (LUN, Logic UNit).It may include one or more tube cores (Die) in nand flash memory encapsulation.
Typically, logic unit corresponds to single tube core.Logic unit may include multiple planes (Plane).It is more in logic unit
A plane can be with parallel access, and multiple logic units in nand flash memory chip can execute order and report independently of one another
State.
Data are usually stored and read on storage medium by page.And data are erased in blocks.Block (also referred to as physical block) packet
Containing multiple pages.Page (referred to as Physical Page) on storage medium has fixed size, such as 17664 bytes.Physical Page can also be with
With other sizes.
In solid storage device, safeguarded using FTL (Flash Translation Layer, flash translation layer (FTL)) from
Map information of the logical address to physical address.Logical address constitutes the solid-state that the upper layer software (applications)s such as operating system are perceived and deposits
Store up the memory space of equipment.Physical address is the address for accessing the physical memory cell of solid storage device.In related skill
Also implement address of cache using intermediate address form in art.Such as logical address is mapped as intermediate address, and then will be intermediate
Address is further mapped as physical address.
The table structure for storing the map information from logical address to physical address is referred to as FTL table.FTL table is that solid-state is deposited
Store up the important metadata in equipment.The data item of usual FTL table has recorded the ground in solid storage device as unit of data page
Location mapping relations.
It include multiple NVM chips in solid storage device.Each NVM chip includes one or more tube cores (DIE) or patrols
It collects unit (LUN).Read-write operation can be responded between tube core or logic unit parallel.It is more on same tube core or logic unit
A reading and writing or erasing operation sequence execute.
Bulk includes coming from physical block in each of multiple logic units (LUN) (also referred to as logic unit group).Each
Logic unit can provide a physical block for bulk.For example, being patrolled in the schematic diagram of bulk out shown in Fig. 2 at every 16
It collects and constructs bulk on unit (LUN).Each bulk includes 16 physical blocks respectively from 16 logic units (LUN).In Fig. 2
Example in, bulk 0 includes the physical block 0 of each logic unit in 16 logic units (LUN), and bulk 1 includes
Physical block 1 from each logic unit (LUN).Bulk can also be constructed in many other ways.
For example, constructing page band in bulk, the Physical Page of each interior same physical address of logic unit (LUN) is constituted
" page band ".In Fig. 2, Physical Page P0-0, Physical Page P0-1 ... and Physical Page P0-x constitute page band 0, wherein Physical Page
P0-0, Physical Page P0-1 ... Physical Page P0-14 are for storing user data, and Physical Page P0-x is for storing according in band
The verification data that are calculated of all customer data.Similarly, in Fig. 2, Physical Page P2-0, Physical Page P2-1 ... and physics
Page P2-x constitutes page band 2.Physical Page for storing verification data can be located at any position in page band.
Application No. is 201710752321.0 Chinese patent application (2017 applyings date August 28th, denomination of invention,
Rubbish recovering method and device based on variable length bulk) in provide the bulk of included physical block variable amounts, by this
The full text of Chinese patent application is incorporated herein by reference.
Flash memory stores information by keeping the quantity of electric charge in the memory unit.The quantity of electric charge in storage unit determines storage
The read-out voltage of unit.When reading flash data, compare read-out voltage and the threshold voltage of storage unit to identify that storage is single
The information that member is stored.Phase transition storage, resistance-variable storing device, magnetic rotation memory, DRAM are each with depositing based on different principle
Storage unit stores information.
Storage medium is generally not completely reliable.Due to storage unit the quantity of electric charge by the quality of storage unit, the service life,
The influence of many factors such as time, and from multiple storage units to the heterogencity of the signal transmission path of sense amplifier,
Cause the data read from storage unit with the data of write-in there are deviation, can not correctly embody original being written to storage unit
Information.
Prevent or cope with to lead because of the variation of the factors such as the quantity of electric charge of storage unit using some means in the prior art
Data the problem of can not correctly embodying the data of write-in for causing to read, for example, in United States Patent (USP) US9070454B1, according to depositing
The factors such as the erasable number of storage unit, retention time calculate threshold voltage and (read data from storage unit or to storage unit
The threshold voltage or judgement voltage used when middle write-in data), and number is written to storage unit using calculated threshold voltage
According to.Threshold voltage may include writing threshold value for the reading threshold value of read operation and for write operation.
In flash chip, by indicating different parameters for read operation, come threshold value electricity used when selecting read operation
Pressure.By the read operation with different threshold voltages, the data read from storage unit have different results.Some results tool
Have lower bit error rate (percentage of the total bit number of Bit Error Ratio, error bit and transmission), and some are tied
Fruit bit error rate with higher.ECC (Error Correction Code, the error-correcting code) technology of combined use, has
The probability that the reading result of lower bit error rate is corrected by ECC technology is higher, thus by attempting different parameters, to cope with
The mistake encountered in read operation.Parameter may be incorporated in and be supplied to flash chip in read operation, or is arranged in flash chip
For the parameter of read operation, and when flash chip handles read operation, set parameter is used.
Temperature has an impact to the read-write operation of NVM chip.U.S. Patent application US2015/0092488A1 discloses basis
Temperature when reading data selects the scheme of corresponding read operation parameter.
Summary of the invention
Store working environment of the equipment application in various working environments, such as the storage equipment of data center.Generally
Environment temperature at 20~80 degrees Celsius, and be used for vehicle, factory, outdoor environment storage equipment to bear broader environment temperature
Degree variation, for example, -40~85 degrees Celsius.Under this wide operating temperature range, since temperature is to the read-write operation of NVM chip
Influence, produce higher bit error rate.Therefore, it is necessary to solve under wide operating ambient temperature, because of variation of ambient temperature
The high wrong bitrate bring that the slave NVM chip generated reads data influences.
The storage equipment of the application being designed to provide with wide operating temperature range is changed with compensation temperature to NVM
The influence of the bit error rate of chip improves storage equipment to the adaptability of variation of ambient temperature, so that storage equipment can
It is worked normally under wide temperature range.
According to a first aspect of the present application, the first read command processing method according to the application first aspect is provided, is wrapped
It includes following steps: the first read command is issued to nonvolatile memory according to the read access command of host；It receives and is read according to first
Order the first data read；If there is not repairable mistake in the first data, it is determined that read operation parameter；To non-volatile
Memory issues the second read command, and the second read command depends on read operation parameter, and the second read command accesses phase with the first read command
Same physical address；Receive the second data read according to the second read command, the reading result as read access command.
According to a second aspect of the present application, the first read command processing method according to the application second aspect is provided, is wrapped
It includes following steps: the first read command is issued to nonvolatile memory according to the read access command of host；It determines and reads life with first
The corresponding read operation parameter of storage unit belonging to the data to be read indicated in order；It is deposited using read operation parameter from non-volatile
The first data are read in reservoir.
The first read command processing method according to a second aspect of the present application provides according to the application second aspect
Second reading command handling method, wherein if there is not repairable mistake in the first data, the page item by reading bulk is brought
Restore data.
The first read command processing method according to a second aspect of the present application provides according to the application third aspect
Third reading command handling method, wherein if there is not repairable mistake in the first data, it is determined that new read operation parameter, to
Nonvolatile memory issues the second read command, and the second read command depends on new read operation parameter, the second read command and first
Read command accesses identical physical address；Receive the second data read according to the second read command, the reading as read access command
Result out.
First according to a second aspect of the present application provides to the read command processing method of any one of third according to this
Apply for the 4th read command processing method of second aspect, wherein according to belonging to the data to be read indicated in the first read command
Environment temperature and/or current environmental temperature when storage unit is written into determine read operation parameter.
The 4th read command processing method according to a second aspect of the present application provides according to the application second aspect
Five read command processing methods, wherein the temperature of first environment temperature and current environmental temperature environment respectively where storage equipment.
The 4th or five read command processing methods according to a second aspect of the present application, provide according to the application second aspect
The 6th read command processing method, wherein first environment thermograph is in the metadata of storage unit.
The 6th read command processing method according to a second aspect of the present application provides according to the application second aspect
Seven read command processing methods, wherein further include: third read command is issued to storage unit, to obtain first environment temperature.
The 6th or seven read command processing methods according to a second aspect of the present application, provide according to the application second aspect
The 8th read command processing method, wherein the copy of metadata be stored in storage equipment memory in, from storage equipment in
It deposits and reads first environment temperature.
The 4th read command processing method according to a second aspect of the present application provides according to the application second aspect
Nine read command processing methods, wherein current environmental temperature is obtained by accessing the temperature sensor being disposed in storage equipment,
Or current environmental temperature is obtained by the host of same storage equipment coupling.
The read command processing method of four to any one of 9th according to a second aspect of the present application is provided according to this
Apply for the tenth read command processing method of second aspect, wherein determine according to the difference of first environment temperature and current environmental temperature
Read operation parameter.
The tenth read command processing method according to a second aspect of the present application provides according to the application second aspect
11 read command processing methods, wherein determine read operation parameter by accessing the first look-up table, the first look-up table has recorded first
Corresponding relationship between environment temperature and the difference and read operation parameter of current environmental temperature.
The read command processing method of four to any one of 9th according to a second aspect of the present application is provided according to this
Apply for the tenth second reading command handling method of second aspect, wherein index the multiple of first environment temperature with current environmental temperature
Second look-up table, each second look-up table correspond to the value or value range of first environment temperature, and record is same in second look-up table
The corresponding read operation parameter of multiple current environmental temperatures.
The read command processing method of four to any one of 9th according to a second aspect of the present application is provided according to this
Apply for the tenth third reading command handling method of second aspect, wherein with the difference rope of first environment temperature and current environmental temperature
Draw multiple third look-up tables of first environment temperature, each third look-up table corresponds to the value or value model of first environment temperature
It encloses, record is the same as first environment temperature read operation parameter corresponding with multiple differences of current environmental temperature in third look-up table.
The read command processing method of four to any one of 9th according to a second aspect of the present application is provided according to this
Apply for the 14th read command processing method of second aspect, wherein index the multiple of current environmental temperature with first environment temperature
4th look-up table, each 4th look-up table correspond to the value or value range of current environmental temperature, and record is same in the 4th look-up table
The corresponding read operation parameter of multiple first environment temperature.
The read command processing method of four to any one of 9th according to a second aspect of the present application is provided according to this
Apply for the 15th read command processing method of second aspect, wherein with the difference rope of first environment temperature and current environmental temperature
Draw multiple 5th look-up tables of current environmental temperature, each 5th look-up table corresponds to the value or value model of current environmental temperature
It encloses, record is the same as first environment temperature read operation parameter corresponding with multiple differences of current environmental temperature in the 5th look-up table.
The read command processing method of 12 to any one of 15th according to a second aspect of the present application, provides root
According to the 16th read command processing method of the application second aspect, wherein first environment temperature or current environmental temperature it is multiple
Look-up table copy is stored in memory, determines read operation parameter by accessing memory.
The read command processing method of four to any one of 9th according to a second aspect of the present application is provided according to this
Apply for the 17th read command processing method of second aspect, wherein according to first environment temperature, current environmental temperature, the first number
Primary quilt on the time and storage unit that number, the first data are retained in bulk is wiped free of according to the storage unit at place
One or more in the number being read after erasing determines read operation parameter.
The read command processing method of four to any one of 17th according to a second aspect of the present application, provides basis
18th read command processing method of the application second aspect, wherein obtained according to first environment temperature and current environmental temperature
The sequence of read operation parameter；
Multiple thirds are read from nonvolatile memory according to the corresponding read command of each read operation parameter in sequence
Data, the reading result there will be no the third data of not correctable error as read access command.
The 18th read command processing method according to a second aspect of the present application, provides according to the application second aspect
19th read command processing method, wherein further include: the corresponding read operation parameter of read command of third data will be taken, use
In subsequent read command.
First according to a second aspect of the present application provides to the read command processing method of any one of third according to this
Apply for the 20th read command processing method of second aspect, wherein determine read operation parameter according to parameter list is read, read parameter list note
Storage unit under current environmental temperature locating for storage equipment or current environmental temperature range has been recorded to grasp with read operation parameter or reading
Make the corresponding relationship between argument sequence.
The 20th read command processing method according to a second aspect of the present application, provides according to the application second aspect
21st read command processing method, wherein first environment temperature or first environment when being written into data according to storage unit
Temperature range, storage equipment locating for current environmental temperature or current environmental temperature range, storage unit be wiped free of number, deposit
One or more update in the number that the time and storage unit that the data that storage unit is stored are saved are read reads ginseng
Read operation parameter or read operation argument sequence in number table.
The 20th read command processing method according to a second aspect of the present application, provides according to the application second aspect
20th second reading command handling method, wherein if the variation of current environmental temperature locating for storage equipment is more than threshold value, basis
The first environment temperature recorded in current environmental temperature and the metadata of each storage unit after variation, which updates, reads parameter list.
The read command processing method of 20 to any one of 22nd according to a second aspect of the present application, provides
According to the 20th third reading command handling method of the application second aspect, wherein reading parameter list, which only records, has been written to together data
The corresponding entry of storage unit.
The 20th third reading command handling method according to a second aspect of the present application, provides according to the application second aspect
The 24th read command processing method, wherein the storage unit in response to having been written to data is wiped free of, delete read parameter list
In with being wiped free of the corresponding record of storage unit.
According to the third aspect of the application, provide according to the first of the application third aspect the storage equipment, including control
Component and nonvolatile memory chip, control unit is for executing above-mentioned read command processing method.
What the application realized has the beneficial effect that:
According to an embodiment of the present application, environment temperature T1 when storage equipment is written into data according to bulk or physical block with
Environment temperature T2 when bulk or physical block are by reading data selects optimal reading parameter, is changed to NVM chip with compensation temperature
Bit error rate influence, improve storage equipment to the adaptability of variation of ambient temperature, so that storage equipment can be in width
It is worked normally under temperature range.
Detailed description of the invention
In order to illustrate the technical solutions in the embodiments of the present application or in the prior art more clearly, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The some embodiments recorded in application can also be obtained according to these attached drawings other attached for those skilled in the art
Figure.
Fig. 1 illustrates the block diagram of solid storage device；
Fig. 2 is the schematic diagram of bulk；
Fig. 3 illustrates the flow chart that data are read according to the slave NVM chip of the embodiment of the present application；
Fig. 4 illustrates reading parameter list according to an embodiment of the present invention.
Specific embodiment
Below with reference to the attached drawing in the embodiment of the present application, technical solutions in the embodiments of the present application carries out clear, complete
Ground description, it is clear that described embodiment is some embodiments of the present application, instead of all the embodiments.Based on the application
In embodiment, those skilled in the art's every other embodiment obtained without making creative work, all
Belong to the range of the application protection.
Embodiment one
The bulk stored in equipment has various states, for example, idle state, active state, having been written into state and/or mistake
Effect state.The each physical block for the bulk being in idle condition all has been wiped free of and has been not written into data.It is in active state
Bulk is the bulk for being presently used to carry data to be written.Bulk in the state that has been written into is be fully written data big
Block is no longer written to data (unless state changes), but be used to respond read operation.Bulk in failure state is
Such as the bulk being no longer used due to it comprises excessive unavailable physical block.
The data that idle bulk is used to carry storage equipment to be written are obtained, and by the state of acquired bulk by the free time
Status Change is active state.Metadata also is written in the designated position for the idle bulk being acquired.Storage is also obtained at this time to set
The temperature of standby local environment.For example, obtaining environment temperature by the temperature sensor of arrangement on a storage device, or by same
The host or network that storage equipment is coupled obtain environment temperature.Record bulk, which enters, in the metadata obtains when active state
Environment temperature (is denoted as T1).Optionally, the address of each physical block, bulk included by bulk are also recorded in metadata to be used
The number etc. that is read of data protection mode, the number that is wiped free of of bulk and bulk.
Although in bulk including multiple physical blocks, according to an embodiment of the present application, a environment temperature is only recorded in bulk
Information is spent, to reduce the occupancy to bulk memory space.Generally, each physical block in the bulk of active state is written into number
According to time it is in close proximity to one another, and temperature in a short time will not acute variation, thus a temperature information energy recorded in bulk
Generally represent environment temperature when each physical block of bulk is written into data.
Fig. 3 illustrates the flow chart that data are read according to the slave NVM chip of the embodiment of the present application.
Read access command is initiated to storage equipment in response to host, issues read command (310) to NVM chip.Wherein, life is read
Enable the physical address for indicating data to be read.Under normal conditions, using the read command of the read operation parameter with default.It is optional
Ground additionally determines read operation parameter in step 310, and identified read operation parameter is used in the read command of sending.It can
Selection of land, environment temperature when environment temperature and/or data when being written into according to the data to be read indicated in read command are read
It spends and determines read operation parameter.
Storage equipment carries out error checking (320) to the data read from NVM chip.
If there is not repairable mistake in the data read (for example, the error bit quantity read in data is more than
The error correcting capability of error correction engine) (320), then obtain the temperature T1 (330) that the storage unit of read command access is recorded.It should
Storage unit is bulk or physical block.Temperature T1 indicates data to be read when being written into bulk and (such as becomes from idle state
For active state) storage equipment environment temperature.For example, temperature T1 is that bulk is written when bulk or physical block are assigned and use
Or the environment temperature of the metadata of physical block.Optionally, all bulks or physical block (or all are had been written to count by storage equipment
According to bulk or physical block) metadata retain copy in memory, so as to each bulk of quick obtaining or first number of physical block
According to.Still optionally, to obtain environment temperature T1, equipment is stored to bulk or physical block and issues additional read command to read it
The environment temperature T1 recorded in metadata.
Storage equipment also obtains the current environmental temperature T2 (340) of local environment.Temperature T2 indicates data quilt to be read
The environment temperature of equipment is stored when reading.For example, being obtained by the temperature sensor that access is disposed in storage equipment current
Environment temperature, or current environmental temperature is obtained by the host of same storage equipment coupling.
According to temperature T1 and temperature T2, selection is suitable for the read operation parameter of temperature T1 Yu temperature T2, in step 310
The same physical address of read command access issues read command to read data, using the reading result as read access command again
As a result, wherein the read command issued again uses the read operation parameter (350) obtained according to temperature T1 and temperature T2.It can manage
Xie Di carries out error checking to the data read using the read command issued again from NVM chip.If by after error checking
Read the result that result is accessed as read command.
In one example, according to the difference of temperature T1 and temperature T2, read operation parameter is selected, to compensate read-write operation
When the introduced bit error rate of variation of ambient temperature.For example, being occurred by measurement write operation in the lab and read operation
When ambient temperature differences a variety of value conditions under, corresponding to every kind or the read operation parameter of every group of value, generation has recorded temperature
Spend the poor and look-up table of corresponding optimal read operation parameter of T1 and temperature T2.In step 350, storage equipment is according to temperature T1
Difference access look-up table with temperature T2 is to obtain optimal read operation parameter.
In another example, according to the value of temperature T1 and the value of temperature T2, read operation parameter is selected.For example, storage
Equipment records multiple look-up tables, and each look-up table corresponds to each of temperature T1 or every group of value, and record is the same as multiple in look-up table
The corresponding read operation parameter of current environmental temperature T2, and with the corresponding look-up table of the synthermal T1 of temperature T2 index, it indexes
The optimal read operation parameter corresponding to temperature T1 and temperature T2 is had recorded in lookup table entries.Behaviour is write by measuring in the lab
Under a variety of value conditions for making the environment temperature T1 and T2 when occurring with read operation, the optimal reading corresponding to each pair of T1 and T2 value
Operating parameter generates multiple look-up tables.Optionally, look-up table corresponding for synthermal T1, with the difference of temperature T2 and temperature T1
Index the look-up table.Still optionally, the copy corresponding to the look-up table of temperature T1 is stored in the storage of such as cache
In device, read operation parameter is determined by accessing the memory, to reduce the delay of access look-up table.
In another example, the multiple look-up tables of storage device records, each look-up table correspond to each of temperature T2 or
Every group of value, in look-up table record with multiple temperature T1 corresponding read operation parameter, and use the synthermal T2 correspondence of temperature T1 index
Look-up table, have recorded in the lookup table entries indexed corresponding to the optimal of temperature T1 and the difference of temperature T2 or T1 and T2
Read operation parameter.A variety of value feelings of environment temperature T1 and T2 when by measuring write operation and read operation generation in the lab
Under condition, corresponding to the optimal read operation parameter of each pair of T1 and T2 value, multiple look-up tables are generated.During storing equipment work, ring
Border temperature will not substantially mutate, so that the look-up table corresponding to temperature T2 can be applied to multiple bulks or physical block
Access.Optionally, look-up table corresponding for synthermal T2 indexes the look-up table with the difference of temperature T2 and temperature T1.Still
Optionally, the copy of the look-up table corresponding to temperature T2 is stored in the memory of such as cache, is deposited by accessing this
Reservoir determines read operation parameter, to reduce the delay of access look-up table.
In still another example, in step 350, according to temperature T1, temperature T2, the bulk being read or physical block
Be wiped free of number, be read data in bulk or physical block be retained time and bulk or physical block on be once wiped free of after
One or more parameters in the number being read obtain corresponding optimal read operation parameter.
In still another example, the obtained preferred read operation for corresponding to temperature T1 Yu temperature T2 of step 350
The sequence of parameter.By the sequence for the read operation parameter that sequence provides, the object read using each read operation parameter into step 310
It manages address and issues read command to read data, until not correctable error is not present in the data of reading.There will be no can not correct
Reading result after the reading data progress error correction of mistake as the read access command of host.
Referring back to Fig. 3, in step 320, if reading result, there is no not correctable errors, to the processing knot of read command
Beam.
Optionally, it in step 310, is read according to additionally being determined above in conjunction with mode described in step 330 to step 350
Operating parameter, and identified read operation parameter is used in the read command that step 310 issues.
Further, make to read number in optimal read operation parameter or read operation argument sequence acquired in recording step 350
According to there is no the read operation parameter of not correctable error, the reading data for subsequent read command encounter straight when not correctable error
The optimal read operation parameter of usage record is connect to read data, the searching without executing step 330 to step 350 again is optimal
The process of read operation parameter.For example, being obtained in the optimal read operation parameter recorded or read operation argument sequence in step 310
Make to read data there is no the read operation parameter of not correctable error, using as additionally determining read operation parameter, and in step
Identified read operation parameter is used in rapid 310 read commands issued.Illustratively, storage equipment remembers optimal read operation parameter
It records in the memory or NVM chip of storage equipment.Optionally, the optimal read operation parameter recorded is directly applied to subsequent
Read command (for example, the optimal read operation parameter that application is recorded in the step 310 issues read command).
Fig. 4 illustrates reading parameter list according to an embodiment of the present invention.In another example, each entry of parameter list is read
Have recorded the corresponding optimal read operation parameter of one of same bulk or physical block.For example, the optimal reading for bulk 1 is grasped referring to Fig. 4
It is Vth4 as parameter, and the optimal read operation parameter for being used for bulk 2 is Vth6.Optionally, each of parameter list program recording is read
Optimal reading argument sequence.
It is optionally dynamic for reading parameter list, for example, with environment temperature variation and be updated.In an embodiment
In, it reads parameter list and corresponds to environment temperature (T2) or ambient temperature range locating for current storage devices.It is to be appreciated that current
Environment temperature violent will not generally significantly alter.Equipment is stored from each bulk for being written into data or first number of physical block
Temperature T1 when the bulk or physical block wherein recorded according to middle acquisition is written into data is fitted according to temperature T1 and temperature T2
For each bulk or the optimal read operation parameter or read operation argument sequence of physical block, and it is recorded in and reads in parameter list (Fig. 4).
Further, the time that the data that number, bulk or the physical block being also wiped free of according to bulk or physical block are stored are saved
And/or one or more in the parameters such as number for being read of bulk or physical block update the optimal readings behaviour read in parameter table clauses
Make parameter or read operation argument sequence.In the lab obtain temperature T1, temperature T2, be read bulk be wiped free of number,
One or more be read in the number being read after being once wiped free of on the time and bulk that data are retained in bulk
A parameter, with the optimal relationship for reading parameter, storage equipment is joined according to said one or multiple parameters and these parameters with optimal reading
Several relationships updates read parameter list during the work time.
In response to read operation, equipment bulk according to belonging to physical address to be read or physical block are stored, from reading parameter
Optimal read operation parameter or read operation argument sequence are obtained in table, and use the optimal read operation parameter or read operation parameter obtained
Sequence reads data from NVM chip.Further, if with the optimal read operation parameter or read operation argument sequence obtained from NVM
The data that chip is read still remain not correctable error, and the page item by reading bulk brings trial to restore data.For example
A variety of makes of bulk and its page band are provided in Chinese patent application 2017107523210.
In having an embodiment, change when storing current environmental temperature (T2) locating for equipment, or work as front ring
The variation of border temperature (T2) is more than threshold value, and storage equipment is according to the current environmental temperature (T2) and each bulk or physics after variation
The temperature (T1) recorded in the metadata of block, which updates, reads parameter list, to only maintain same current environmental temperature in storage equipment
(T2) corresponding a reading parameter list, and need not safeguard the reading parameter list or look-up table for corresponding to multiple values of environment temperature,
Reduce the occupancy to memory.
It is to be appreciated that reading only to need record with the bulk or the corresponding entry of physical block for having been written to data in parameter list.
It is wiped free of in response to bulk or physical block, it is same in deletion reading parameter list to be wiped free of bulk or the corresponding record of physical block.
According to an embodiment of the present application, environment temperature T1 when storage equipment is written into data according to bulk or physical block with
Environment temperature T2 when bulk or physical block are by reading data selects optimal reading parameter, is changed to NVM chip with compensation temperature
Bit error rate influence, improve storage equipment to the adaptability of variation of ambient temperature, so that storage equipment can be in width
It is worked normally under temperature range.
Although the preferred embodiment of the application has been described, it is created once a person skilled in the art knows basic
Property concept, then additional changes and modifications may be made to these embodiments.So it includes excellent that the following claims are intended to be interpreted as
It selects embodiment and falls into all change and modification of the application range.Obviously, those skilled in the art can be to the application
Various modification and variations are carried out without departing from spirit and scope.If in this way, these modifications and variations of the application
Belong within the scope of the claim of this application and its equivalent technologies, then the application is also intended to encompass these modification and variations and exists
It is interior.
Claims (10)
1. a kind of read command processing method, which comprises the steps of:
The first read command is issued to nonvolatile memory according to the read access command of host；
Receive the first data read according to first read command；
If there is not repairable mistake in first data, it is determined that read operation parameter；
The second read command is issued to the nonvolatile memory, second read command depends on the read operation parameter, institute
It states the second read command and first read command accesses identical physical address；
Receive the second data read according to second read command, the reading result as the read access command.
2. a kind of read command processing method, which comprises the steps of:
The first read command is issued to nonvolatile memory according to the read access command of host；
It determines with the corresponding read operation parameter of storage unit belonging to the data to be read indicated in first read command；
The first data are read from the nonvolatile memory using the read operation parameter.
3. read command processing method according to claim 2, which is characterized in that
If there is not repairable mistake in first data, it is determined that new read operation parameter non-volatile is deposited to described
Reservoir issues the second read command, and second read command depends on the new read operation parameter, second read command and institute
It states the first read command and accesses identical physical address；
Receive the second data read according to second read command, the reading result as the read access command.
4. read command processing method according to any one of claim 1-3, which is characterized in that read to order according to described first
Environment temperature and/or current environmental temperature when storage unit belonging to the data to be read indicated in order is written into, which determine, reads behaviour
Make parameter.
5. read command processing method according to claim 4, which is characterized in that according to the first environment temperature with it is described
The difference of current environmental temperature determines read operation parameter.
6. read command processing method according to claim 4, which is characterized in that worked as with the first environment temperature with described
Multiple third look-up tables of the difference index first environment temperature of preceding environment temperature, each corresponding first ring of the third look-up table
The value or value range of border temperature, record is the same as the multiple of first environment temperature and current environmental temperature in the third look-up table
The corresponding read operation parameter of difference.
7. the read command processing method according to any one of claim 4-6, which is characterized in that
The sequence of read operation parameter is obtained according to the first environment temperature and the current environmental temperature；
It is read from the nonvolatile memory according to the corresponding read command of each read operation parameter in the sequence multiple
Third data, the reading result there will be no the third data of not correctable error as the read access command.
8. read command processing method according to any one of claim 1-3, which is characterized in that determined according to parameter list is read
The read operation parameter, the reading parameter list have recorded current environmental temperature or current environmental temperature range locating for storage equipment
Lower storage unit is the same as the corresponding relationship between read operation parameter or read operation argument sequence.
9. read command processing method according to claim 8, which is characterized in that when being written into data according to storage unit
Current environmental temperature locating for first environment temperature or first environment temperature range, storage equipment or current environmental temperature range,
The number that the time and storage unit that the data that number that storage unit is wiped free of, storage unit are stored are saved are read
In one or more update the read operation parameters or read operation argument sequence read in parameter lists.
10. a kind of storage equipment, including control unit and nonvolatile memory chip, the control unit is for executing basis
Read command processing method described in claim 1-9.
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| CN113467704A (en) * | 2020-03-31 | 2021-10-01 | 西部数据技术公司 | Command optimization through intelligent threshold detection |
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