CN110289286B - Display panel, manufacturing method thereof and electronic equipment - Google Patents

Display panel, manufacturing method thereof and electronic equipment Download PDF

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CN110289286B
CN110289286B CN201910447935.7A CN201910447935A CN110289286B CN 110289286 B CN110289286 B CN 110289286B CN 201910447935 A CN201910447935 A CN 201910447935A CN 110289286 B CN110289286 B CN 110289286B
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layer
light
insulating layer
display panel
metal wiring
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CN110289286A (en
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张文真
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Guangdong Oppo Mobile Telecommunications Corp Ltd
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Guangdong Oppo Mobile Telecommunications Corp Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/86Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass

Abstract

The application provides a display panel, a manufacturing method thereof and electronic equipment. The pixel control layer is electrically connected with the light emitting layer and is used for controlling the light emitting layer so that the display panel can display a picture. The luminous layer is provided with a light hole penetrating through the luminous layer, and the light hole is used as a light channel when ambient light passes through the luminous layer, so that the influence of the luminous layer on the ambient light can be weakened or even eliminated, and the reliability of the display panel is improved. The light guide medium is filled in the light transmission holes and used for weakening or even eliminating reflection of ambient light when the ambient light sequentially passes through the cover plate, the light emitting layer and the pixel control layer so as to improve the transmittance of the display panel to the ambient light and further improve the reliability of the display panel.

Description

Display panel, manufacturing method thereof and electronic equipment
Technical Field
The application relates to the technical field of electronic equipment, in particular to a display panel, a manufacturing method of the display panel and the electronic equipment.
Background
At present, in order to realize functions of face recognition, self-photographing, video call and the like, electronic equipment is generally provided with a front camera module on the front side of a body. In addition, the screen occupation ratio of the electronic equipment is higher and higher, so that better user experience can be obtained, and the competitiveness of the product is improved. For this reason, various large equipment manufacturers have successively introduced designs such as "bang screen", "drip screen", and "drilling screen". However, many of the above designs are directed to electronic devices equipped with lcd (liquid Crystal display) display panels.
Disclosure of Invention
The embodiment of the application provides a display panel, wherein, this display panel is including base plate, pixel control layer, luminescent layer and the apron that stacks gradually the setting, and the pixel control layer is connected with the luminescent layer electricity to be used for controlling the luminescent layer, the luminescent layer is seted up the light trap that runs through the luminescent layer, and the light trap intussuseption is filled with leaded light medium.
The embodiment of the application also provides an electronic device, wherein, this electronic device includes display panel and camera module, display panel is including the base plate of range upon range of setting, the pixel control layer, luminescent layer and apron, the pixel control layer is connected with the luminescent layer electricity, and be used for controlling the luminescent layer, the luminescent layer is seted up the light trap that runs through the luminescent layer, the light trap intussuseption is filled with leaded light medium, the camera module sets up the one side of keeping away from the pixel control layer at the base plate, and just to setting up with leaded light medium on display panel's light-emitting direction.
The embodiment of the application further provides a manufacturing method of the display panel, wherein the manufacturing method comprises the following steps: forming a pixel control layer on a substrate; forming a light emitting layer on the pixel control layer;
forming a light transmission hole penetrating the light emitting layer in the light emitting layer; forming a light guide medium in the light holes; the cover plate is covered on the luminescent layer.
The beneficial effect of this application is: the application provides a display panel includes base plate, pixel control layer, luminescent layer and the apron that stacks gradually the setting. The pixel control layer is electrically connected with the light emitting layer and is used for controlling the light emitting layer so that the display panel can display a picture. The luminous layer is provided with a light hole penetrating through the luminous layer, and the light hole is used as a light channel when ambient light passes through the luminous layer, so that the influence of the luminous layer on the ambient light can be weakened or even eliminated, and the reliability of the display panel is improved. The light guide medium is filled in the light transmission holes and used for weakening or even eliminating reflection of ambient light when the ambient light sequentially passes through the cover plate, the light emitting layer and the pixel control layer so as to improve the transmittance of the display panel to the ambient light and further improve the reliability of the display panel.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic cross-sectional structure diagram of a first embodiment of a display panel provided in the present application;
FIG. 2 is a schematic cross-sectional view of one embodiment of the electrical connection of the pixel control layer of FIG. 1;
FIG. 3 is a schematic diagram of a control circuit formed by the pixel control layer of FIG. 1;
FIG. 4 is a schematic top view of the display panel shown in FIG. 1;
FIG. 5 is a schematic view of the structure of the light-emitting layer of FIG. 1;
FIG. 6 is a schematic cross-sectional view of a second embodiment of a display panel provided in the present application;
fig. 7 is a schematic cross-sectional structure diagram of a first embodiment of an electronic device provided in the present application;
FIG. 8 is a schematic flow chart illustrating a method for fabricating a display panel according to a first embodiment of the present disclosure;
FIG. 9 is a schematic flow chart of one embodiment of step S101 in FIG. 8;
FIG. 10 is a schematic flow chart diagram of another embodiment of step S101 in FIG. 8
FIG. 11 is a schematic flow chart diagram illustrating one embodiment of step S102 in FIG. 8;
fig. 12 is a schematic structural view of a process of forming the light emitting layer in fig. 11.
Detailed Description
The present application will be described in further detail with reference to the following drawings and examples. It is to be noted that the following examples are only illustrative of the present application, and do not limit the scope of the present application. Likewise, the following examples are only some examples and not all examples of the present application, and all other examples obtained by a person of ordinary skill in the art without any inventive work are within the scope of the present application.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein can be combined with other embodiments.
The inventors of the present application have found, through long-term research: in order to further improve the screen ratio, the full-screen is realized. In an electronic device with an OLED (Organic Light-Emitting Diode) display panel, a camera module is generally disposed below the OLED display panel to increase the screen ratio of the display panel. The camera module can be reached only by the ambient light passing through the display panel, so that the functions of face recognition, self-photographing, video conversation and the like are realized; the influence of the display panel on the imaging effect of the camera module becomes a problem to be considered. To this end, the present application proposes the following examples.
Referring to fig. 1, fig. 1 is a schematic cross-sectional structure diagram of a display panel according to a first embodiment of the present disclosure.
The display panel 10 of the present embodiment includes a substrate 11, a pixel control layer 12, a light-emitting layer 13, and a cover 14, which are stacked in this order. The pixel control layer 12 is electrically connected to the light emitting layer 13 and is used for controlling the light emitting layer 13 so that the display panel 10 can display a picture.
In general, the substrate 11 mainly functions to support the display panel 10, and the cover plate 14 mainly functions to protect the display panel 10. In some embodiments, the composition of the substrate 11 and the cover plate 14 may be glass, for example: may be made of silicon dioxide (SiO2) to form a rigid display panel. In other embodiments, the composition of the substrate 11 and the cover plate 14 may be optically transparent resin, such as: may be made of Polyimide (PI) to form a flexible display panel.
The pixel control layer 12 includes a first insulating layer 121, a second insulating layer 122, and a third insulating layer 123 stacked in this order. The first insulating layer 121 is provided with a transistor array layer 124 and a first metal wiring layer 125, the second insulating layer 122 is provided with a second metal wiring layer 126, and the third insulating layer 123 is provided with a third metal wiring layer 127.
In this embodiment, the first insulating Layer 121 may be an Inter Layer Insulating Layer (ILD) of the pixel control Layer 12, and is mainly used for electrically insulating the first metal wiring Layer 125 and the second metal wiring Layer 126. The second insulating Layer 122 may also be an Inter Layer Insulating Layer (ILD) of the pixel control Layer 12, and is mainly used for electrically insulating the second metal wiring Layer 126 from the third metal wiring Layer 127. The third insulating layer 123 may be a Passivation insulating layer (PV) of the pixel control layer 12, and is mainly used to electrically insulate the third metal wiring layer 127 from the outside and protect the functional layers to some extent. In some embodiments, the composition of the first insulating layer 121, the second insulating layer 122, and the third insulating layer 123 may be a silicon-oxygen compound or a silicon-nitrogen compound, such as: silicon dioxide (SiO2), silicon nitride (Si3N4) to enable ambient light to pass through the pixel control layer 12, as well as to serve the electrical insulation described above. In other embodiments, the first insulating layer 121, the second insulating layer 122 and the third insulating layer 123 may have the same composition, so that the first insulating layer 121, the second insulating layer 122 and the third insulating layer 123 form a uniform insulating transparent body, thereby preventing the ambient light from being unnecessarily reflected at the boundary of the insulating layers during the process of passing through the pixel control layer 12, and further increasing the transmittance of the pixel control layer 12 to the ambient light.
It should be noted that, silicon dioxide has better toughness than silicon nitride; for the flexible display panel, if there is a special requirement for the flexibility, bending degree, etc. of the flexible display panel, silicon dioxide may be considered as the composition of the first insulating layer 121, the second insulating layer 122, and the third insulating layer 123 in the flexible display panel.
Optionally, the pixel control layer 12 further includes a planarization insulating layer (PLN) 128, and the planarization insulating layer 128 is disposed on a side of the third insulating layer 123 away from the second insulating layer 122. The planarization insulating layer 128 mainly serves to planarize the surface of the pixel control layer 12 so as to form the light emitting layer 13 on the surface of the pixel control layer 12.
Referring to fig. 2 and 3 together, fig. 2 is a schematic cross-sectional structure of an embodiment of electrical connection of the pixel control layer 12 in fig. 1, and fig. 3 is a schematic structural diagram of a control circuit formed by the pixel control layer 12 in fig. 1.
Further, the transistor array layer 124 is electrically connected to the light emitting layer 13 through the first metal wiring layer 125, the second metal wiring layer 126, and the third metal wiring layer 127, as shown in fig. 2, thereby forming a control circuit of the display panel 10, as shown in fig. 3, to control the light emitting layer 13.
Among them, the first metal wiring layer 125 may be electrically connected to the gates of the transistors in the transistor array layer 124, thereby forming a scan line. The second metal wiring layer 126 may be used to reset the transistor array layer 124 and the light emitting layer 13. The third metal wiring layer 127 may be electrically connected to the source and drain of the transistor in the transistor array layer 124, thereby forming a data line. A storage capacitor can also be formed between the first metal wiring layer 125 and the second metal wiring layer 126, mainly for stabilizing the gate voltage of the transistor. Generally, the first metal wiring layer 125, the second metal wiring layer 126, and the third metal wiring layer 127 are arranged in a grid shape so as to cross each other.
Specifically, the control circuit includes first to seventh transistors T1, T2, T3, T4, T5, T6, T7, a storage capacitor Cs, and a light emitting element LE. For example: the first transistor T1 is used as a driving transistor, and the second to seventh transistors are used as switching transistors. The control circuit is briefly described as follows:
the gate of the first transistor T1 is connected to the first node N1, the first pole of the first transistor T1 is connected to the second node N2, and the second pole of the first transistor T1 is connected to the third node N3. A gate of the second transistor T2 is for receiving the Scan signal Scan, a first pole of the second transistor T2 is for receiving the data signal Vdata, and a second pole of the second transistor T2 is connected to the third node N3. The gate of the third transistor T3 is for receiving the Scan signal Scan, the first pole of the third transistor T3 is connected to the second node N2 and is for receiving the data signal Vdata, the second pole of the third transistor T3 is connected to the first pole of the storage capacitor Cs, and the second pole of the storage capacitor Cs is for receiving the first voltage Vdd. A gate of the fourth transistor T4 is for receiving the first emission control signal EM1, a first pole of the fourth transistor T4 is for receiving the first voltage Vdd, and a second pole of the fourth transistor T4 is connected to the second node N2. A gate of the fifth transistor T5 is for receiving the second light emission control signal EM2, a first pole of the fifth transistor T5 is connected to the third node N3, and a second pole of the fifth transistor T5 is connected to the fourth node N4. The gate of the sixth transistor T6 is for receiving the reset signal RST, the first pole of the sixth transistor T6 is connected to the first node N1, and the second pole of the sixth transistor T6 is connected to the third node N3. A gate of the seventh transistor T7 is for receiving the reset signal RST, a first pole of the seventh transistor T7 is connected to the first node N4, and a second pole of the seventh transistor T7 is for receiving the reset voltage Vinit. For example, the reset voltage Vinit may be 0V, or may be another low-level signal. The anode of the light emitting element LE is connected to the fourth node N4, and the cathode of the light emitting element LE receives the second voltage Vss. For example, the second voltage terminal may be grounded, i.e., Vss may be 0V.
Further, when the fifth transistor T5, the sixth transistor T6, and the seventh transistor T7 are turned on simultaneously (i.e., the second emission control signal EM2 and the reset signal RST are on signals simultaneously), the first node N1 and the light emitting element LE are connected to the reset voltage Vinit simultaneously, that is, the storage capacitor Cs, the gate of the first transistor T1, and the light emitting element LE may be reset simultaneously. When the third transistor T3 is turned on, the gate (first node N1) and the second pole (second node N2) of the first transistor T1 may be connected. At this time, the first transistor T1 is diode-connected, so that the data signal Vdata can be stored in the storage capacitor Cs. Meanwhile, the threshold voltage of the first transistor T1 may also be compensated by itself. In addition, the third transistor T3 is disposed between the gate and the second pole of the first transistor T1, and the sixth transistor T6 is disposed between the gate and the first pole of the first transistor T1, so that the third transistor T3 and the sixth transistor T6 are symmetrically disposed with respect to the first transistor T1. With this connection, the first node N1 has two leakage paths with opposite polarities, and the leakage currents can compensate each other, so that the leakage current in the off state can be reduced, and the display effect of the display panel 10 using the control circuit can be improved.
Note that each Transistor in the Transistor array layer 124 may be a Thin Film Transistor (TFT) or a field effect Transistor (fet), or another switching device having the same characteristics. In the present embodiment, the transistors in the transistor array layer 124 are all thin film transistors. Since the source and drain electrodes of the thin film transistor may be symmetrical in structure, the source and drain electrodes may not be different in structure. In order to distinguish the two poles of the transistor except the gate, one of them is directly described as a first pole, and the other is directly described as a second pole. In addition, the transistors in this embodiment are all described by taking P-type transistors as examples; at this time, the first pole may be a source and the second pole may be a drain. Of course, the transistors in this embodiment may all be N-type transistors; at this time, the first pole may be a drain and the second pole may be a source.
Referring to fig. 4 and 5 together, fig. 4 is a schematic top view of the display panel 10 in fig. 1, and fig. 5 is a schematic structural view of the light emitting layer 13 in fig. 1.
The light emitting Layer 13 includes light emitting cells 131 and a Pixel Definition Layer (PDL) 132 arranged in an array, and the light emitting cells 131 are electrically connected to transistors in the transistor array Layer 124 to display a picture under the control of the Pixel control Layer 12. The pixel defining layer 132 is disposed in a grid shape for isolating the light emitting cells 132 in the extending direction of the display panel 10.
The direction indicated by the arrow X, Y in fig. 4 is the extending direction of the display panel 10.
In general, the light Emitting unit 131 includes at least an Anode metal Layer (Anode)1311, a Hole Injection Layer (HIL) 1312, a Hole Transport Layer (HTL) 1313, an Electroluminescent Layer (EL) 1314, an Electron output Layer (ETL) 1315, an Electron Injection Layer (EIL) 1316, and a Cathode metal Layer (Cathode)1317, which are sequentially stacked, as shown in fig. 5.
Among them, the anode metal layer 1311 may be electrically connected to the third metal wiring layer 127 to achieve electrical connection between the light emitting layer 13 and the pixel control layer 12. In some embodiments, the anode metal layer 1311 may be indium tin oxide ITO (which has a high work function) and is mainly used to provide holes after the display panel 10 is powered on; holes reach the electroluminescent layer 1314 through the hole injection layer 1312 and the hole transport layer 1313. The cathode metal layer 1317 may be an organic metal with a low work function, such as magnesium or silver, and is mainly used to provide electrons after the display panel 10 is powered on, and the electrons reach the electroluminescent layer 1314 through the electron injection layer 1316 and the electron output layer 1315. Further, the electroluminescent layer 1314 may be any one of RGB sub-pixels, and the holes and the electrons combine to release light energy, so that the light emitting unit 131 emits light and presents different colors.
Based on the above description, in order to improve the screen ratio of the display panel 10, a camera module (not shown in the figure) may be disposed below the display panel 10. At this time, the ambient light needs to pass through the display panel 10 to reach the camera module, so as to realize the functions of face recognition, self-photographing, video call, and the like. Because the luminescent layer 13 can hinder ambient light to reach the camera module to a certain extent, and the light that the luminescent layer 13 sent also can influence the formation of image effect of camera module to a certain extent. In this regard, a portion of the light-emitting layer 13 corresponding to the camera module may be removed to form a light channel, so as to reduce or even eliminate the influence of the light-emitting layer 13 when the ambient light reaches the camera module through the display panel 10.
Referring to fig. 1 and 4 again, the light emitting layer 13 of the present embodiment is provided with a light hole 133 penetrating through the light emitting layer 13. The light-transmitting holes 133 serve as light passages for ambient light when passing through the light-emitting layer 13 to reduce or even eliminate the influence of the light-emitting layer 13 on the ambient light.
Alternatively, the sectional shape of the light-transmitting hole 133 is circular, as shown in fig. 4. Parameters such as the diameter of the light hole 133 may be reasonably designed according to the light transmission requirement of the display panel 10, and are not limited herein.
The inventors of the present application further found in long-term studies that: light is reflected from one medium a into another medium B so that not all of the light enters medium B, but part is reflected back into medium a, resulting in some loss of light. In other words, the transmittance of light is reduced. According to the fresnel formula: when light enters from medium a (whose refractive index is denoted as n1) into medium B (whose refractive index is denoted as n2) at an incident angle (approach) of 90 °, the reflectance R can be calculated as:
R=[(n1-n2)/(n1+n2)]2
in the display panel 10, the substrate 11 and the cover plate 14 are made of glass (mainly containing silicon dioxide), and the first insulating layer 121, the second insulating layer 122, and the third insulating layer 123 in the pixel control layer 12 are made of silicon dioxide. When the ambient light sequentially passes through the cover plate 14, the light holes 133 of the light emitting layer 13, the pixel control layer 12 and the substrate 11 in a manner perpendicular to the display panel 10, the ambient light is reflected at least twice due to different media.
Typically, silica has a refractive index of about 1.46; the refractive index of air is about 1.00. It is clear that the first reflection occurs when ambient light enters the light transmission holes 133 (air medium) of the light emitting layer 13 from the cover plate 14 (silica medium). At this time, the reflectance R1 ═ [ (1.46-1.00)/(1.46+1.00)]2Approximately 0.187, that is to say 18.7% of the ambient light will undergo a first reflection, and only 81.3% of the ambient light will enter the light-transmitting apertures 133 of the light-emitting layer 13 from the cover plate 14. Similarly, a second reflection occurs when the ambient light continues to enter the pixel control layer 12 (silicon dioxide medium) from the light transmission hole 133 (air medium) of the light emitting layer 13. At this time, the reflectance R2 ═ [ (1.00-1.46)/(1.46+1.00)]2Approximately 0.187, that is, 18.7% of the ambient light will undergo a second reflection, and only 81.3% of the ambient light will enter the pixel control layer 12 from the light-transmitting aperture 133 of the light-emitting layer 13. Therefore, if the above-mentioned double reflection phenomenon occurs during the process of the ambient light passing through the display panel 10, only about 66% (81.3% multiplied by 81.3%) of the ambient light will eventually reach the camera module. In other words, the light transmittance of the display panel 10 is only 66%, which obviously affects the imaging effect of the camera module, for example: darkening of the image, extended exposure time, etc.
In contrast, the light guide medium 134 is filled in the light hole 133 of this embodiment to replace the original air medium (theoretically, the refractive index is the lowest), so as to increase the refractive index of the portion, further weaken or even eliminate the above-mentioned two-time reflection phenomenon, and improve the transmittance of the display panel 10 to the ambient light. Further, the difference between the refractive index of light guiding medium 134 and the refractive index of pixel control layer 12 is less than or equal to 1. The difference between the refractive index of the light guide medium 134 and the refractive index of the cover plate 14 is less than or equal to 0.6. The light guide medium 134 may be composed of a silicon oxide compound or a silicon nitride compound, or an optically transparent resin.
The following description will be given taking a rigid display panel as an example. The substrate 11 and the cover plate 14 are made of glass (mainly silicon dioxide, with a refractive index of about 1.46), and the first insulating layer 121, the second insulating layer 122, and the third insulating layer 123 in the pixel control layer 12 are made of silicon oxide (e.g., silicon dioxide) or silicon nitride (e.g., silicon nitride, with a refractive index of about 2.04). Taking the light guide medium 134 as an example, which includes silicon oxide (e.g., silicon dioxide), silicon nitride (e.g., silicon nitride), and optically transparent resin (e.g., allyl diglycol dicarbonate, which has a refractive index of about 1.50), the light transmittance of the display panel 10 is calculated, and the calculation results are shown in table 1 below. Where the difference (positive value) between the refractive index of the light-guiding medium 134 and the refractive index of the cover plate 14 is denoted as δ 1, a first reflection of ambient light may occur when the ambient light enters the light-guiding medium 134 from the cover plate 14 (the reflectivity is denoted as R1); the difference between the refractive index of light guiding medium 134 and the refractive index of pixel control layer 12 (taking a positive value) is denoted as δ 2, and a second reflection of ambient light may occur as it enters pixel control layer 12 from light guiding medium 134 (the reflectivity is denoted as R2).
Table 1:
Figure GDA0002956720130000091
Figure GDA0002956720130000101
the following description will take the flexible display panel as an example. The substrate 11 and the cover plate 14 are made of an optically transparent resin (e.g., polyimide, refractive index of about 1.70), and the first insulating layer 121, the second insulating layer 122, and the third insulating layer 123 in the pixel control layer 12 are made of a silicon oxide compound (e.g., silicon dioxide) or a silicon nitride compound (e.g., silicon nitride). Taking the light guide medium 134 as an example, which includes silicon oxide (e.g., silicon dioxide), silicon nitride (e.g., silicon nitride), and optically transparent resin (e.g., allyl diglycol dicarbonate), the light transmittance of the display panel 10 is calculated, and the calculation results are shown in table 2 below. Where the difference (positive value) between the refractive index of the light-guiding medium 134 and the refractive index of the cover plate 14 is denoted as δ 3, a first reflection of ambient light may occur when the ambient light enters the light-guiding medium 134 from the cover plate 14 (the reflectivity is denoted as R3); the difference between the refractive index of light guiding medium 134 and the refractive index of pixel control layer 12 (taking a positive value) is denoted as δ 4, and a second reflection of ambient light may occur as it enters pixel control layer 12 from light guiding medium 134 (the reflectivity is denoted as R4).
Table 2:
Figure GDA0002956720130000102
Figure GDA0002956720130000111
from the simple calculation results, it can be seen that: 1) after the light guide medium 134 is filled in the light hole 133 to replace the original air medium, the two reflection phenomena are weakened to a certain extent due to the change of the refractive index of the part, so that the transmittance of the display panel 10 to the ambient light is improved; 2) the pixel control layer 12 and the cover plate 14 with different compositions and the light guide medium 134 with different compositions can form the display panel 10 with various light transmittances, thereby increasing the application range of the display panel 10.
It should be noted that, since the composition of the substrate 11 and the composition of the cover plate 14 are generally the same (for example, both are glass), the third reflection condition that may occur when the ambient light enters the substrate 11 from the pixel control layer 12 may refer to the first reflection condition that may occur when the ambient light enters the light guide medium 134 from the cover plate 14; the above third reflection case is also not added to the above calculation results. Further, in this example, the quality of the light transmittance was not classified and evaluated.
In order to further reduce or even eliminate the influence of other factors on the transmittance of the display panel 10 to the ambient light, the structure of the display panel 10 in this embodiment is further modified at least as follows:
a) since the planarization insulating layer 128 is generally made of an organic material, there may be a difference between the refractive index of the planarization insulating layer and the refractive index of the third insulating layer 123 and the light guiding medium 134 in the pixel control layer 12, which may affect the transmittance of the display panel 10 to the ambient light. For this reason, the light-transmitting holes 133 of the present embodiment penetrate through the planarization insulating layer 128 in the light-emitting direction of the display panel 10, as shown in fig. 1, so that the light-guiding medium 134 directly contacts with the third insulating layer 123 in the pixel control layer 12, thereby reducing the number of times of reflection of ambient light between different media in the display panel 10, and further improving the transmittance of the display panel 10 for the ambient light.
The direction indicated by the arrow Z in fig. 1 is the light emitting direction of the display panel 10.
b) Since the first metal wiring layer 125, the second metal wiring layer 126 and the third metal wiring layer 127 are generally opaque, if the ambient light interferes with any one of the metal wiring layers during the process of passing through the pixel control layer 12, a shadow (i.e. the shadow of the metal wiring layer) appears in the imaging result of the camera module. For this reason, the first metal wiring layer 125, the second metal wiring layer 126 and the third metal wiring layer 127 of the present embodiment do not overlap with the light guide medium 134 in the light outgoing direction of the display panel 10, as shown in fig. 1, so that the ambient light does not interfere with any of the metal wiring layers in the process of entering the pixel control layer 12 from the light guide medium 134 and propagating therein, thereby eliminating the above-mentioned shadow phenomenon. Furthermore, the first metal wiring layer 125, the second metal wiring layer 126 and the third metal wiring layer 127 are crossed and staggered with each other and arranged in a grid shape, so that the metal wiring layer "woven net" has a certain light shielding effect.
c) For an OLED display panel, each light emitting unit 131 is a light source. Since the light hole 133 is opened in the light emitting layer 13, the light emitting unit 131 is inevitably surrounded around the light hole 133, as shown in fig. 1 and 4. Further, the light emitted from the light emitting unit 131 may reach the light transmitting hole 133 to interfere with ambient light. When the light guide medium 134 is filled in the light hole 133, the light guide medium 134 may be affected by the light emitting unit 131, and thus the display panel 10 may be affected. For this reason, the minimum distance between the light emitting unit 131 and the light guide medium 134 in the extending direction of the display panel 10 is greater than or equal to a distance threshold, for example: the distance threshold may be 500 μm to reduce the influence of the light emitting unit 131 on the light guiding medium 134. Further, the pixel defining layer 132 of the present embodiment is used for isolating the light emitting unit 131 from the light guide medium 134 in the extending direction, so as to reduce the light transmittance of the light emitted by the light emitting unit 131 to a certain extent, thereby further reducing the influence of the light emitting unit 131 on the light guide medium 134.
Referring to fig. 6, fig. 6 is a schematic cross-sectional structure diagram of a display panel according to a second embodiment of the present disclosure.
Since the light emitted from the light emitting unit 131 may reach the light transmitting hole 133 to interfere with the ambient light, when the light transmitting hole 133 is filled with the light guiding medium 134, the light guiding medium 134 may be affected by the light emitting unit 131, and thus reliability of the display panel 10 may be affected. For this reason, the light-emitting layer 13 in the display panel 20 of the present embodiment further includes a light-shielding layer 135, and the light-shielding layer 135 is disposed between the pixel defining layer 132 and the light-guiding medium 134. The light shielding layer 135 is used to block light interference between the light emitting unit 131 and the light guide medium 134, so as to prevent the light emitting unit 131 from affecting ambient light passing through the light guide medium 134, thereby improving reliability of the display panel 20.
Optionally, the light-shielding layer 135 is composed of light-shielding ink or light-shielding tape. The light-shielding layer 135 may be disposed on an inner peripheral wall of the light-transmitting hole 133 or an outer peripheral wall of the light-guiding medium 134 to block light interference between the light-emitting unit 131 and the light-guiding medium 134.
Further, other structures of the display panel 20 of the present embodiment are the same as or similar to those of the display panel 10 of the first embodiment, and reference may be made to the detailed description of the display panel 10 of the first embodiment, which is not repeated herein.
Referring to fig. 7, fig. 7 is a schematic cross-sectional structure diagram of a first embodiment of an electronic device provided in the present application.
The electronic device 30 of the present embodiment includes the camera module 31 and the display panel of any of the above embodiments, and the present embodiment is described by taking the second embodiment of the display panel 20 as an example. The display panel 20 includes a substrate 11, a pixel control layer 12, a light emitting layer 13, and a cover plate 14, which are stacked, and the light emitting layer 13 is provided with a light guide medium 134, as shown in fig. 6. The camera module 31 is disposed on a side of the substrate 11 away from the pixel control layer 12, and is disposed opposite to the light guide medium 134 in the light emitting direction of the display panel 20.
For the specific structure of the display panel 20, reference may be made to the above detailed description of the second embodiment of the display panel 20, which is not repeated herein.
Based on the above description, the pixel control layer 12 is electrically connected to the light emitting layer 13 and is used to control the light emitting layer 13 so that the display panel 20 can display a picture, and the electronic device 30 can be used by a user. The light emitting layer 13 is provided with a light hole 133 penetrating through the light emitting layer 13, and the light hole 133 serves as a light channel when ambient light passes through the light emitting layer 13, so that the influence of the light emitting layer 13 on the ambient light is weakened or even eliminated, the imaging effect of the camera module 31 is increased, and the experience and the sensitivity of a user on the electronic device 30 are improved. Further, the light guide medium 134 is filled in the light hole 133, and the light guide medium 134 is used for weakening or even eliminating reflection of the ambient light when the ambient light sequentially passes through the cover plate 14, the light emitting layer 13 and the pixel control layer 12, so as to improve the transmittance of the display panel 20 to the ambient light, thereby increasing the imaging effect of the camera module 31 and improving the user experience sensitivity of the electronic device 30. In addition, a light shielding layer 135 is disposed between the pixel defining layer 132 and the light guiding medium 134, and the light shielding layer 135 is used for blocking light interference between the light emitting unit 131 and the light guiding medium 134, so as to prevent the light emitting unit 131 from affecting ambient light passing through the light guiding medium 134, further increase an imaging effect of the camera module 31, and improve reliability of the electronic device 30.
Further, when the camera module 31 is disposed below the display panel 20, in order to increase the amount of light that reaches the camera module 31 through the display panel 20, that is, to increase the lighting amount of the camera module 31, the diameter of the light guide medium 134 may be slightly larger than the camera module 31, as shown in fig. 7. However, this design easily causes part of the structure of the camera module 31 to be directly exposed to the user, thereby affecting the overall aesthetic appearance. Therefore, in the present embodiment, the light-shielding ring 32 is disposed on a surface of the substrate 11 away from the pixel control layer 12, the light-shielding ring 32 is disposed coaxially with the light-guiding medium 134, and the light-shielding ring 134 is interposed between the substrate 11 and the camera module 31 to shield the camera module 31 from the lens, thereby improving the aesthetic appearance of the electronic device 30.
Referring to fig. 8, fig. 8 is a schematic flow chart of a manufacturing method of a display panel according to a first embodiment of the present disclosure. The manufacturing method comprises the following steps:
s101: a pixel control layer is formed on the substrate.
Among them, the substrate 11 mainly functions to support the display panel 10, as shown in fig. 1. In some embodiments, the composition of the substrate 11 may be glass, for example: may be made of silicon dioxide to form a rigid display panel. In other embodiments, the composition of the substrate 11 may also be an optically transparent resin, such as: may be made of polyimide to form a flexible display panel.
S102: a light emitting layer is formed on the pixel control layer.
The pixel control layer 12 is electrically connected to the light emitting layer 13, as shown in fig. 2. The pixel control layer 12 is mainly used to control the light emitting layer 13, so that the light emitting layer 13 emits light under the control of the pixel control layer 12, thereby enabling the display panel 10 to display a picture.
S103: a light-transmitting hole penetrating the light-emitting layer is formed in the light-emitting layer.
The light-transmitting holes 133 serve as light channels for ambient light to pass through the light-emitting layer 13, as shown in fig. 1 and 3. The light-transmitting holes 133 are mainly used to reduce or even eliminate the influence of the light-emitting layer 13 on the ambient light.
S104: and forming a light guide medium in the light holes.
The light guide medium 134 is mainly used to replace the original air medium in the light hole 133, as shown in fig. 1, so as to increase the refractive index of the light guide medium, further weaken or even eliminate the above-mentioned two-time reflection phenomenon, and improve the transmittance of the display panel 10 to the ambient light.
S105: the cover plate is covered on the luminescent layer.
Among other things, the cover plate 14 mainly functions to protect the display panel 10, as shown in fig. 1. In some embodiments, the cover plate 14 may be a glass, for example: may be made of silicon dioxide to form a rigid display panel together with the substrate 11 (the constituent component of which is glass). In other embodiments, the composition of the cover plate 14 may also be an optically transparent resin, such as: may be made of polyimide to form a flexible display panel together with the substrate 11, the constituent components of which are optically transparent resin.
Referring to fig. 9, fig. 9 is a schematic flowchart of an embodiment of step S101 in fig. 8.
The step S101 specifically includes the following steps, which are described with reference to fig. 1 and 2:
s1011: and manufacturing a transistor array layer and a first metal wiring layer on the substrate.
Each transistor in the transistor array layer 124 may be a thin film transistor, a field effect transistor, or other switching devices with the same characteristics, and may be fabricated on the substrate 11 by using an etching method. The first metal layer wire 125 may be formed of gold, silver, copper, or the like, and may be formed by photolithography. Further, the first metal wiring layer 125 may be electrically connected to the gates of the transistors in the transistor array layer 124, thereby forming a scan line.
Alternatively, before the transistor array layer 124 is formed on the substrate 11, one or more layers of silicon oxygen compound or silicon nitrogen compound may be deposited on the substrate 11 in advance by chemical vapor deposition to prevent silicon atoms in the substrate 11 from entering the transistor array layer 124, so as to improve the reliability of the pixel control layer 12.
S1012: a first insulating layer is deposited on a substrate.
The first insulating layer 121 may be a silicon-oxygen compound or a silicon-nitrogen compound, and may be deposited on the substrate 11 by chemical vapor deposition. The first insulating layer 121 covers the transistor array layer 124 and the first metal wiring layer 125, and is mainly used for electrically insulating the first metal wiring layer 125.
S1013: and manufacturing a second metal wiring layer on the first insulating layer.
The second metal layer wire 126 may be made of gold, silver, copper, or the like, and may be formed on the first insulating layer 121 by photolithography. The second metal wiring layer 126 is electrically connected to the transistor array layer 124, and is mainly used for resetting the transistor array layer 124 and the light emitting layer 13. Further, a storage capacitor can be formed between the second metal wiring layer 126 and the first metal wiring layer 125, and is mainly used for stabilizing the gate voltage of the transistor in the transistor array layer 124.
S1014: a second insulating layer is deposited over the first insulating layer.
The second insulating layer 122 may be a silicon-oxygen compound or a silicon-nitrogen compound, and may be deposited on the first insulating layer 121 by chemical vapor deposition. The second insulating layer 122 covers the second metal wiring layer 126, and is mainly used for electrically insulating the second metal wiring layer 126.
S1015: and manufacturing a third metal wiring layer on the second insulating layer.
The third metal layer wiring 127 may be formed of gold, silver, copper, or the like, and may be formed on the second insulating layer 122 by photolithography. Further, the third metal wiring layer 127 may be electrically connected to the source and drain of the transistor in the transistor array layer 124, thereby forming a data line.
S1016: a third insulating layer is deposited over the second insulating layer.
The third insulating layer 123 may be a silicon-oxygen compound or a silicon-nitrogen compound, and may be deposited on the second insulating layer 122 by chemical vapor deposition. The third insulating layer 123 covers the third metal wiring layer 127, and is mainly used for electrically insulating the third metal wiring layer 127.
Referring to fig. 10, fig. 10 is a schematic flowchart of another embodiment of step S101 in fig. 8.
In this embodiment, step S101 may further include:
s1017: a planarization insulating layer is coated on the third insulating layer.
The planarization insulating layer 128 may be an organic material, and may be formed on the third insulating layer 123 by coating. The planarization insulating layer 128 mainly serves to planarize the surface of the pixel control layer 12 so as to form the light emitting layer 13 on the surface of the pixel control layer 12.
Referring to fig. 11 and 12 together, fig. 11 is a schematic flow chart of an embodiment of step S102 in fig. 8, and fig. 12 is a schematic structural view of a forming process of the light emitting layer in fig. 11.
Step S102 specifically includes the following steps, which are described with reference to fig. 1, 5, and 12:
s1021: a pixel defining layer is coated on the planarization insulating layer.
The pixel defining layer 132 may be an organic material, and the pixel defining layer 132 may be disposed in a grid shape on the planarization insulating layer 128 by coating, as shown in fig. 12 (a) to (b). The grid-shaped pixel defining layer 132 has a plurality of regions to be evaporated 136, and the regions to be evaporated 136 are used for manufacturing the light emitting units 131.
S1022: and coating a pixel definition layer in a region to be evaporated in a preset region.
Here, the predetermined region refers to a region where the light-transmitting hole 133 is located in the light-emitting layer 13, as indicated by a dashed-line frame in fig. 12 (b). The pixel defining layer 132 is coated on the to-be-evaporated region 136 in the predetermined region to fill the to-be-evaporated region 136 in the predetermined region, as in the processes of (b) to (c) in fig. 12.
Optionally, a side of the pixel defining layer 132 away from the planarization insulating layer 128 is further coated with light supporting Posts (PS) 137 similar to the pixel defining layer 132 and arranged in a grid shape, as in the processes of (c) to (d) in fig. 12.
S1023: and at least evaporating an anode metal layer, a hole injection layer, a hole transport layer, an electroluminescent layer, an electron output layer and an electron injection layer in sequence in the area to be evaporated.
Among them, the anode metal layer 1311 may be electrically connected to the third metal wiring layer 127 to achieve electrical connection between the light emitting layer 13 and the pixel control layer 12.
In this embodiment, the light emitting unit 131 can be formed in the to-be-evaporated region 126 by using a Fine Metal Mask (FMM) and an evaporation method. Specifically, compared to the above-mentioned chemical vapor deposition and coating methods, the semi-finished product including the substrate 11, the pixel control layer 12, the pixel defining layer 132 and the light supporting pillars 137 is turned over by 180 °, so that the semi-finished product is "flipped over" above the evaporation solution to prepare for the subsequent evaporation. Further, the light supporting posts 137 abut against the FMM and make the region to be evaporated 136 face the through holes on the FMM, as shown in fig. 12 (d) to (e), so that the evaporation solution can pass through the through holes on the FMM, and at least the anode metal layer 1311, the hole injection layer 1312, the hole transport layer 1313, the electroluminescent layer 1314, the electron output layer 1315, and the electron injection layer 1316 are deposited on the region to be evaporated 136.
Since the FMM is not directly in contact with the pixel defining layer 132 and the illumination supporting posts 137 are disposed between the FMM and the pixel defining layer 132, the pixel defining layer 132 can be effectively prevented from being scratched.
Further, after the evaporation is finished, the planarization insulating layer 128, the pixel defining layer 132 and the third insulating layer 123 may be peeled off and the light emitting unit 131 possibly existing in the predetermined region may be taken away by irradiating the predetermined region with laser, so as to form the light transmitting hole 133, as shown in fig. 1. In other embodiments, the light-transmitting holes 133 may be formed by machining a predetermined region.
In the related art, in order to form the light transmission holes 133 in the light emitting layer 13, a shielding portion for blocking deposition of the evaporation solution in the region to be evaporated 136 is generally provided on the FMM. The FMM is provided with the through holes arranged in an array manner, so that the structural strength of the FMM can be weakened to a certain extent; if the blocking portion is further arranged on the FMM, the blocking portion is easy to cause the FMM structure to be failed (for example, completely deformed) due to the excessive gravity. In the related art, the shielding part is indirectly formed by splicing two FMMs, so that the gravity of the shielding part required to be borne by a single FMM is shared. However, the above splicing method has a large requirement on the processing precision and the butt joint precision of the two FMMs, which increases the manufacturing cost on one hand and potentially reduces the yield on the other hand (because once any one of the processing precision and the butt joint precision of the two FMMs does not meet the precision requirement, an evaporation defective product may be generated). In this embodiment, the region to be evaporated 136 in the predetermined region (i.e. the position where the light-transmitting hole 133 is located in the light-emitting layer 13) is filled in advance, and then the planarization insulating layer 128, the pixel defining layer 132 and the third insulating layer 123 are stripped by irradiating the predetermined region with laser, or the light-transmitting hole 133 is formed in the light-emitting layer 13 by machining the predetermined region, as shown in fig. 1 and 12. By the mode, the shielding part is not required to be arranged on the FMM, and the precision problem caused by splicing the FMMs is not required to be considered, so that the manufacturing process is simplified, and the yield is increased.
Alternatively, after forming the light transmission hole 133 penetrating the light emitting layer 13 in the light emitting layer 13, a light shielding ink may be applied or a light shielding tape may be attached to the inner circumferential wall of the light transmission hole 133 to form the light shielding layer 135, as shown in fig. 6.
Further, in the present embodiment, the light guide medium 134 is formed by filling a silicon oxide compound, a silicon nitride compound, or an optically transparent resin in the light transmission hole 133. And after filling the light guide medium 134 in the light transmission hole 133, a cathode metal layer 1317 is deposited on the pixel defining layer 132.
The above description is only a part of the embodiments of the present application, and not intended to limit the scope of the present application, and all equivalent devices or equivalent processes performed by the content of the present application and the attached drawings, or directly or indirectly applied to other related technical fields, are also included in the scope of the present application.

Claims (21)

1. A display panel is characterized by comprising a substrate, a pixel control layer, a light emitting layer and a cover plate which are sequentially stacked, wherein the pixel control layer is electrically connected with the light emitting layer and is used for controlling the light emitting layer;
the pixel control layer comprises a first insulating layer, a second insulating layer and a third insulating layer which are sequentially stacked, the first insulating layer is provided with a transistor array layer and a first metal wiring layer in a clamping mode, the second insulating layer is provided with a second metal wiring layer in a clamping mode, the third insulating layer is provided with a third metal wiring layer in a clamping mode, the transistor array layer is electrically connected with the light emitting layer through the first metal wiring layer, the second metal wiring layer and the third metal wiring layer, the first insulating layer is close to the substrate, the third insulating layer is close to the light emitting layer, and the first metal wiring layer, the second metal wiring layer and the third metal wiring layer are not overlapped with the light guide medium in the light emitting direction of the display panel in a projection mode.
2. The display panel according to claim 1, wherein an absolute value of a difference between a refractive index of the light guide medium and refractive indices of the first, second, and third insulating layers is less than or equal to 1.
3. The display panel according to claim 1, wherein an absolute value of a difference between the refractive index of the light guide medium and the refractive index of the cover sheet is less than or equal to 0.6.
4. The display panel according to claim 1, wherein the light guide medium comprises a silicon oxide compound, a silicon nitride compound, or an optically transparent resin.
5. The display panel according to claim 1, wherein a composition of the first insulating layer, the second insulating layer, and the third insulating layer is a silicon oxynitride compound or a silicon nitride compound.
6. The display panel according to claim 1, wherein the pixel control layer further comprises a planarization insulating layer, the planarization insulating layer is disposed on a surface of the third insulating layer away from the second insulating layer, and the light-transmitting hole penetrates through the planarization insulating layer in the light-emitting direction.
7. The display panel according to claim 1, wherein the light emitting layer comprises light emitting units arranged in an array, the light emitting units are electrically connected to the transistor array layer, and a minimum distance between the light emitting units and the light guide medium in an extending direction of the display panel is greater than or equal to a distance threshold.
8. The display panel according to claim 7, wherein the light emitting layer further comprises a pixel defining layer for isolating the light emitting unit in the extension direction and for isolating the light emitting unit from the light guide medium in the extension direction.
9. The display panel according to claim 8, wherein the light emitting layer further comprises a light shielding layer provided between the pixel defining layer and the light guide medium and configured to block light interference between the light emitting unit and the light guide medium.
10. The display panel according to claim 9, wherein the light-shielding layer is formed of a light-shielding ink or a light-shielding tape, and is provided on an inner peripheral wall of the light-transmitting hole or an outer peripheral wall of the light-guiding medium.
11. The display panel according to claim 1, wherein the substrate and the cover plate are composed of glass; alternatively, the substrate and the cover plate may be composed of an optically transparent resin.
12. An electronic device, comprising a camera module and the display panel of any one of claims 1-11, wherein the camera module is disposed on a side of the substrate away from the pixel control layer, and is disposed opposite to the light guide medium in a light emitting direction of the display panel.
13. The electronic device according to claim 12, wherein a light-shielding ring is disposed on a surface of the substrate away from the pixel control layer, the light-shielding ring is disposed coaxially with the light guide medium, and the light-shielding ring is interposed between the substrate and the camera module.
14. A manufacturing method of a display panel is characterized by comprising the following steps:
manufacturing a transistor array layer and a first metal wiring layer on a substrate; wherein the first metal wiring layer is electrically connected to the transistor array layer;
depositing a first insulating layer on the substrate; wherein the first insulating layer covers the transistor array layer and the first metal wiring layer;
manufacturing a second metal wiring layer on the first insulating layer; wherein the second metal wiring layer is electrically connected to the transistor array layer;
depositing a second insulating layer on the first insulating layer; wherein the second insulating layer covers the second metal wiring layer;
manufacturing a third metal wiring layer on the second insulating layer; wherein the third metal wiring layer is electrically connected to the transistor array layer;
depositing a third insulating layer on the second insulating layer; wherein the third insulating layer covers the third metal wiring layer;
forming a light emitting layer on the third insulating layer;
forming a light transmission hole penetrating the light emitting layer in the light emitting layer;
forming a light guide medium in the light holes; the first metal wiring layer, the second metal wiring layer and the third metal wiring layer are not overlapped with the light guide medium in the light emergent direction of the display panel in a projection mode;
and a cover plate is covered on the luminous layer.
15. The method according to claim 14, wherein before the step of forming a light-emitting layer over the third insulating layer, the method further comprises:
and coating a planarization insulating layer on the third insulating layer.
16. The method according to claim 15, wherein the step of forming a light-emitting layer over the third insulating layer comprises:
coating a pixel defining layer on the planarization insulating layer; the pixel definition layer is arranged in a grid shape and is provided with a plurality of areas to be evaporated;
coating the pixel defining layer on the region to be evaporated in a preset region;
sequentially evaporating at least an anode metal layer, a hole injection layer, a hole transport layer, an electroluminescent layer, an electron output layer and an electron injection layer in the area to be evaporated; wherein the anode metal layer is electrically connected to the third metal wiring layer.
17. The method according to claim 16, wherein the step of forming a light-transmitting hole in the light-emitting layer, the light-transmitting hole penetrating through the light-emitting layer, comprises:
irradiating the preset area with laser to enable the planarization insulating layer, the pixel defining layer and the third insulating layer to be stripped so as to form the light hole; alternatively, the first and second electrodes may be,
and machining the preset area to form the light hole.
18. The method of manufacturing according to claim 17, wherein after the step of forming a light-transmitting hole in the light-emitting layer, the method further comprises:
and coating shading ink on the inner peripheral wall of the light hole or sticking a shading adhesive tape to form a shading layer.
19. The method of claim 18, wherein the step of forming a light-guiding medium in the light-transmitting hole comprises:
and filling a silicon-oxygen compound, a silicon-nitrogen compound or an optical transparent resin in the light-transmitting hole to form the light-guiding medium.
20. The method of claim 19, wherein after the step of forming a light guide medium in the light hole, the method further comprises:
depositing a cathode metal layer on the pixel defining layer.
21. The method according to claim 14, wherein a composition of the first insulating layer, the second insulating layer, and the third insulating layer is a silicon oxynitride compound or a silicon nitride compound.
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Publication number Priority date Publication date Assignee Title
CN113272881B (en) * 2019-11-15 2023-08-29 京东方科技集团股份有限公司 Display panel, spliced display panel and preparation method thereof
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109120753A (en) * 2018-08-21 2019-01-01 武汉天马微电子有限公司 A kind of display panel and display device
CN109411519A (en) * 2018-10-23 2019-03-01 云谷(固安)科技有限公司 Display panel and preparation method thereof, display device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9870024B2 (en) * 2015-10-30 2018-01-16 Essential Products, Inc. Camera integrated into a display

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109120753A (en) * 2018-08-21 2019-01-01 武汉天马微电子有限公司 A kind of display panel and display device
CN109411519A (en) * 2018-10-23 2019-03-01 云谷(固安)科技有限公司 Display panel and preparation method thereof, display device

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