CN110277297A - Electron generating and ion implantation device - Google Patents
Electron generating and ion implantation device Download PDFInfo
- Publication number
- CN110277297A CN110277297A CN201910538143.0A CN201910538143A CN110277297A CN 110277297 A CN110277297 A CN 110277297A CN 201910538143 A CN201910538143 A CN 201910538143A CN 110277297 A CN110277297 A CN 110277297A
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- CN
- China
- Prior art keywords
- reaction chamber
- module
- electron generating
- wall
- electronics
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
The present invention provides a kind of electron generating and ion implantation devices, module, reaction chamber and isolation module occurs including electronics, the electronics occurs module and is set in the reaction chamber to generate electronics, and the isolation module, which is detachably arranged on the inner wall of the reaction chamber, occurs module with the inner wall that the reaction chamber is isolated and the electronics.When maintaining electron generating, it only needs to carry out wiping cleaning to isolation module, and do not have to carry out wiping cleaning to the inner wall of reaction chamber, because of the inner wall without reaction chamber is lost, it reduces production cost and reduces the risk of metallic pollution, also, because isolation module is detachably arranged on the inner wall of reaction chamber, so isolation module is convenient for unpicking and washing and replacing, to improve the maintenance efficiency of electron generating.
Description
Technical field
The present invention relates to technical field of semiconductor preparation more particularly to a kind of electron generatings and ion implantation device.
Background technique
Ion implantation device is one of high-pressure bench scale accelerator, and number of applications is most, it is that institute is obtained by ion source
The ion needed, ion obtain the ion beam of several hundred thousands of ev energies by acceleration, are used as semiconductor material, extensive collection
At the ion implanting of circuit and device.
In ion implantation device, electron generating is a kind of device for neutralizing crystal column surface charge, and principle is
By filament launching electronics, it is uniformly applied to crystal column surface, and then reduces the probability of charge defects.Electron generating maintenance
It is one of the project that the monthly maintenance of ion implantation apparatus must be done, but the intracavitary portion of the electric arc reaction of electron generating is produced due to ionization
A thick layer film is given birth to, film is attached on the inner wall of electric arc reaction chamber, is influenced resistance, and then influence emission current, is led
Cause emission current relatively low.In general, the maintenance method of the electric arc reaction chamber of electron generating is to wipe electricity using scouring pad and washing
The inside of arc reaction chamber, maintenance often to the cavity of electric arc reaction chamber can cause very lossy, improve production cost,
It is easy to produce metallic pollution simultaneously.
Summary of the invention
The purpose of the present invention is to provide a kind of electron generating and ion implantation devices, can be improved electronics and fill
The maintenance efficiency set reduces the risk of production cost and metallic pollution.
In order to achieve the above object, the present invention provides a kind of electron generatings, including electronics, and module, reaction chamber occurs
And isolation module, the electronics occur module and are set in the reaction chamber to generate electronics, the isolation module is dismountable
It is set on the inner wall of the reaction chamber and module is occurred with the inner wall that the reaction chamber is isolated and the electronics.
Optionally, the shape of the isolation module and the shape of the reaction chamber match, so that the isolation module is complete
The inner wall of reaction chamber described in all standing.
Optionally, the isolation module includes several liner plates, and the inner wall of the quantity of the liner plate and the reaction chamber
Quantity is identical, and an inner wall of the reaction chamber is completely covered in a liner plate.
Optionally, the liner plate includes graphite lining plate.
Optionally, the thickness of the liner plate is between 0.5mm-1.5mm.
Optionally, be provided with several card slots on the inner wall of the reaction chamber, the liner plate be inserted into the card slot with institute
Reaction chamber is stated to be detachably connected.
Optionally, it further includes power supply and tungsten filament that module, which occurs, for the electronics, and the power supply is connect with the tungsten filament, institute
Tungsten filament is stated to heat the reaction chamber so as to gas ionization in the reaction chamber and generate electronics.
Optionally, the filament is twist.
The present invention also provides a kind of ion implantation devices, and module, wafer carrying module and the electricity occurs including ion
Sub- generating device, the electron beam of the electron generating transmitting enter the ion and occur in the ion beam of module transmitting, and
In the wafer of the co-implanted wafer carrying module carrying.
Optionally, the electron generating is set to the ion and occurs between module and the wafer carrying module,
Also, the electron generating and the ion occur between module be greater than at a distance from ion beam current classical prescription is upward it is described
Electron generating is between the wafer carrying module at a distance from ion beam current classical prescription is upward.
In electron generating provided by the invention and ion implantation device, including electronics occur module, reaction chamber and
Isolation module, the electronics occur module and are set in the reaction chamber to generate electronics, and the isolation module is removably set
It is placed on the inner wall of the reaction chamber, when needing to maintain electron generating, it is only necessary to tear the isolation module open
Lower cleaning, and do not have to carry out wiping cleaning to the inner wall of reaction chamber, because of the inner wall without reaction chamber is lost, reduce life
Produce cost, improve the maintenance efficiency of electron generating, and the isolation module be isolated the inner wall of the reaction chamber with
Module occurs for the electronics, to reduce the risk that reaction chamber is contaminated with metals.
Detailed description of the invention
Fig. 1 is a structural schematic diagram of electron generating provided in an embodiment of the present invention；
Fig. 2 is another structural schematic diagram of electron generating provided in an embodiment of the present invention；
Fig. 3 is the structural schematic diagram of ion implantation device provided in an embodiment of the present invention；
Wherein, appended drawing reference are as follows:
101- reaction chamber；102- inner wall；103- isolation module；104- air inlet；
10- electron generating；11- electron beam；Module occurs for 20- ion；21- ion beam；30- wafer carrying module；
31- wafer.
Specific embodiment
A specific embodiment of the invention is described in more detail below in conjunction with schematic diagram.According to following description,
Advantages and features of the invention will become apparent from.It should be noted that attached drawing is all made of very simplified form and using non-accurate
Ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
As depicted in figs. 1 and 2, a kind of electron generating is present embodiments provided, including electronics occurs module and (do not show
Out), reaction chamber 101 and isolation module 103, the electronics occur module and are set in the reaction chamber 101 to generate electronics, institute
It states isolation module 103 and is detachably arranged in the inner wall that the reaction chamber 101 is isolated on the inner wall 102 of the reaction chamber 101
102 occur module with the electronics.
Further, the electronics occur module include power supply (not shown) and tungsten filament (be not shown, the power supply with it is described
Tungsten filament connection, the tungsten filament are heated gas ionization and production so that in the reaction chamber 101 to the reaction chamber 101
Raw electronics.There is an air inlet 104 on the inner wall 102 of the reaction chamber, when needing launching electronics, gas passes through air inlet 104
Into in reaction chamber 101, power supply is powered to tungsten filament to heat the gas, and makes the gas ionization launching electronics beam.Institute
State tungsten filament twist, the contact surface of spiral tungsten filament and gas is bigger, and ionization effect is more preferable.
Since the inner wall 102 and electronics generation module of the reaction chamber 101, institute has been isolated in the isolation module 103
After stating the gas ionization that electronics occurs in module, the film for ionizing generation can be attached on the isolation module 103 without attached
On the inner wall 102 of the reaction chamber 101, when needing to maintain electron generating, it is only necessary to by the isolation
Module 103 removes cleaning, and does not have to carry out wiping cleaning to the inner wall of reaction chamber 101, because without reaction chamber 101 is lost
Inner wall, reduce production cost, improve the maintenance efficiency of electron generating, and the isolation module 103 is isolated
Module occurs for the inner wall 102 and the electronics of the reaction chamber 101, to reduce the risk that reaction chamber 102 is contaminated with metals.
Optionally, the shape of the isolation module 103 and the shape of the reaction chamber 101 match, so that the isolation
Module 103 is completely covered the inner wall 102 of the reaction chamber 101, and in the present embodiment, the shape of the reaction chamber 101 is cuboid,
The shape of the so described isolation module 103 is also cuboid, and the isolation module 103 completely covers the reaction chamber
101 inner wall 112 prevents the inner wall 112 from module contact occurs with the electronics.It should be noted that isolation module 103
It can be square, cylindrical body etc. shape, mainly selected according to the shape of reaction chamber 101, as long as can reach complete
Cover in 102 purpose of inner wall.
Further, the isolation module 103 includes several liner plates, and the quantity of the liner plate and the reaction chamber 101
The quantity of inner wall 102 is identical, and an inner wall 102 of the reaction chamber 101 is completely covered in a liner plate.In the present embodiment,
Liner plate selects graphite lining plate, main reason is that: first, the stable chemical performance of graphite material, when ionization can reduce electronics with
The probability of metal bump reduces metallic pollution risk, improves the yield of wafer；Second, cost is relatively low for graphite lining plate, Ke Yijie
About production cost；Third, the electric conductivity and thermal conductivity of graphite material are fine, ionization will not influence.
In the present embodiment, the reaction chamber 101 is a cuboid reaction chamber, and the graphite lining plate quantity is four pieces, every piece
The shape of the graphite lining plate is cuboid, direct by one piece one piece of the graphite lining plate before using electron generating
It is put into reaction chamber 101, so that each graphite lining plate is joined end to end by the size of the design graphite lining plate and constitute a length
The frame of cube, and each graphite lining plate can be close to the inner wall of the reaction chamber 101.When electron generating 10 works
When, because the graphite lining plate separates the inner wall 102 of the electron generating 10 and the reaction chamber 101, the electricity
Module occurs for son will be attached on graphite lining plate due to ionizing the film generated, the inner wall without being attached to reaction chamber 101
On 102, when needing to maintain the electron generating, it is only necessary to remove one piece of block of graphite lining plate, wipe clear
It washes, is removed without module first is occurred for the electronics in reaction chamber 101, then remove the inner wall of cleaning reaction chamber 101 again
102, because being lost caused by without the inner wall 102 to reaction chamber 101, to reduce the wind of production cost and metallic pollution
Danger.Also, because graphite lining plate can mount and dismount manually, convenient for unpicking and washing and replacing, to improve electronics
The maintenance efficiency of device 10.
Certainly, since there are many shapes of the reaction chamber 101, the quantity of the graphite lining plate is also not limited to 4 pieces, can
To be 5 pieces, 6 pieces or more or even one piece is good, such as when the reaction chamber 101 is a cylindrical reaction chamber, then every
It can be one piece of cylindrical graphite lining plate from module 103.
Further, several card slot (not shown) are provided on the inner wall 102 of the reaction chamber 101, the graphite lining plate is inserted
Enter in the card slot to be detachably connected with the reaction chamber 101.Certainly, the company of the reaction chamber 101 and the isolation module
The mode of connecing is also possible to other detachable connection methods, for example is threadedly coupled or snaps connection, or can also will be described
Graphite lining plate is put into reaction chamber 101 after being first assembled into a general frame, such as by four pieces of graphite lining plates in the present embodiment
It is assembled into an end to end rectangular frame, directly rectangular frame is put into the reaction chamber 101, and can reach
To the purpose for covering in inner wall 102, the present embodiment no longer illustrates one by one.
Optionally, the thickness of the graphite lining plate is between 0.5mm-1.5mm, by inventor's many experiments and always
Knot, is more preferably to select when graphite lining plate is with a thickness of 1mm, because the too thin easy loss of graphite lining plate, needs to be replaced frequently,
It will affect ionization space if too thick, to influence ionization effect.
Based on this, the present embodiment also provides a kind of ion implantation device, as shown in figure 3, including that module 20, crystalline substance occur for ion
The circle carrier module 30 and electron generating 10, the electron beam 11 that the electron generating 10 emits enter it is described from
Son occurs in the ion beam 21 of module transmitting, and in the wafer 31 of the co-implanted carrying of wafer carrying module 30.The electricity
Sub- generating device 10 is set to the ion and occurs between module 20 and the wafer carrying module 30, also, the electronics is sent out
Generating apparatus 10 occurs flowing through between module 20 in ion beam 21 with the ion and is greater than electronics generation at a distance from direction
Device 10 flows through at a distance from direction between the wafer carrying module 21 in ion beam 21, that is to say, that when ion occurs
The ion beam 21 that module 20 emits soon reaches just meeting and electron generating when on the wafer 31 that wafer carrying module 30 carries
The electron beam 11 of 10 transmittings, and in the wafer 31 of the co-implanted carrying of wafer carrying module 30.
To sum up, the embodiment of the invention provides a kind of electron generating and ion implantation devices, by reaction chamber
Isolation module 103 is removably set between 101 and electronics generation module, making electronics that module occur will not be with reaction chamber 101
Inner wall directly contacts, so when maintaining electron generating, it is only necessary to wiping cleaning is carried out to isolation module 103,
And do not have to carry out wiping cleaning to the inner wall of reaction chamber 101, because of the inner wall 102 without reaction chamber 101 is lost, reduce production
The risk of cost and metallic pollution, also, because isolation module is detachably arranged on the inner wall of reaction chamber, isolation
Module 103 is convenient for unpicking and washing and replacing, to improve the maintenance efficiency of electron generating.
The above is only a preferred embodiment of the present invention, does not play the role of any restrictions to the present invention.Belonging to any
Those skilled in the art, in the range of not departing from technical solution of the present invention, to the invention discloses technical solution and
Technology contents make the variation such as any type of equivalent replacement or modification, belong to the content without departing from technical solution of the present invention, still
Within belonging to the scope of protection of the present invention.
Claims (10)
1. a kind of electron generating, which is characterized in that module, reaction chamber and isolation module, the electronics occurs including electronics
Module occurs to be set in the reaction chamber to generate electronics, the isolation module is detachably arranged in the interior of the reaction chamber
Module is occurred with the inner wall that the reaction chamber is isolated and the electronics on wall.
2. electron generating as described in claim 1, which is characterized in that the shape of the isolation module and the reaction chamber
Shape match so that the inner wall of the reaction chamber is completely covered in the isolation module.
3. electron generating as described in claim 1, which is characterized in that the isolation module includes several liner plates, and institute
The quantity for stating liner plate is identical as the quantity of the inner wall of the reaction chamber, and one of the reaction chamber is completely covered in a liner plate
Inner wall.
4. electron generating as claimed in claim 3, which is characterized in that the liner plate includes graphite lining plate.
5. electron generating as described in claim 3 or 4, which is characterized in that the thickness of the liner plate is between 0.5mm-
Between 1.5mm.
6. electron generating as claimed in claim 3, which is characterized in that be provided with several cards on the inner wall of the reaction chamber
Slot, the liner plate are inserted into the card slot to be detachably connected with the reaction chamber.
7. electron generating as described in claim 1, which is characterized in that the electronics occur module further include power supply and with
The tungsten filament of the power supply connection, the tungsten filament are heated the gas ionization so that in the reaction chamber to the reaction chamber
And generate electronics.
8. electron generating as claimed in claim 7, which is characterized in that the tungsten filament is twist.
9. a kind of ion implantation device, which is characterized in that module, wafer carrying module occurs including ion and such as claim 1-
Electron generating described in any one of 8, the electron beam of the electron generating transmitting enter the ion and module occur
In the ion beam of transmitting, and in the wafer of the co-implanted wafer carrying module carrying.
10. ion implantation device as claimed in claim 9, which is characterized in that the electron generating be set to it is described from
Son occurs between module and the wafer carrying module, also, the electron generating and the ion occur between module
It is greater than between the electron generating and the wafer carrying module in the upward distance of ion beam current classical prescription in ion beam current
The upward distance of classical prescription.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910538143.0A CN110277297A (en) | 2019-06-20 | 2019-06-20 | Electron generating and ion implantation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910538143.0A CN110277297A (en) | 2019-06-20 | 2019-06-20 | Electron generating and ion implantation device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110277297A true CN110277297A (en) | 2019-09-24 |
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ID=67961365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910538143.0A Pending CN110277297A (en) | 2019-06-20 | 2019-06-20 | Electron generating and ion implantation device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110277297A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104157593A (en) * | 2013-05-14 | 2014-11-19 | 中芯国际集成电路制造(上海)有限公司 | Dust detection system and dust detection method |
| US20190062947A1 (en) * | 2017-08-25 | 2019-02-28 | Aixtron Se | Method and apparatus for surface preparation prior to epitaxial deposition |
| CN208954933U (en) * | 2018-09-17 | 2019-06-07 | 德淮半导体有限公司 | Arc chamber and plasma immersion rifle |
-
2019
- 2019-06-20 CN CN201910538143.0A patent/CN110277297A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104157593A (en) * | 2013-05-14 | 2014-11-19 | 中芯国际集成电路制造(上海)有限公司 | Dust detection system and dust detection method |
| US20190062947A1 (en) * | 2017-08-25 | 2019-02-28 | Aixtron Se | Method and apparatus for surface preparation prior to epitaxial deposition |
| CN208954933U (en) * | 2018-09-17 | 2019-06-07 | 德淮半导体有限公司 | Arc chamber and plasma immersion rifle |
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| PB01 | Publication | ||
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190924 |