CN110265465A - Display panel and display device - Google Patents
Display panel and display device Download PDFInfo
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- CN110265465A CN110265465A CN201910575068.5A CN201910575068A CN110265465A CN 110265465 A CN110265465 A CN 110265465A CN 201910575068 A CN201910575068 A CN 201910575068A CN 110265465 A CN110265465 A CN 110265465A
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- film transistor
- tft
- display panel
- thin film
- bending
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- 238000005452 bending Methods 0.000 claims abstract description 113
- 239000010409 thin film Substances 0.000 claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000010408 film Substances 0.000 claims description 36
- 230000003287 optical effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 10
- 230000008569 process Effects 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000004146 energy storage Methods 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000003760 hair shine Effects 0.000 description 3
- 239000012044 organic layer Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
This application involves a kind of display panel and display devices.A kind of display panel provided herein and display device.Display panel includes substrate, and substrate has plane domain and bending region, and multiple second thin film transistor (TFT)s are located at bending region, and the angle in source electrode to the direction of drain electrode and the extending direction of the starting bending axis of second thin film transistor (TFT) is 0 degree to 30 degree.During display panel forms display device, the bending region can be folded into side, reduce the area that non-display area occupies in display device.In the bending process in bending region, the second thin film transistor (TFT) can keep good device state, therefore the reliability of gate driving circuit can be improved, so that display panel has display state well, thus can guarantee the service life of display panel.
Description
Technical field
This application involves field of display technology, more particularly to a kind of display panel and display device.
Background technique
With the development of science and technology, mobile phone shows that being increasingly intended to Rimless shows (Infinity Display), tradition
When reaching Rimless display in scheme, the edge of display screen even viewing area is generally subjected to bending design, to realize Rimless
Visual effect, while side can also show extremely dazzle effect.
For display screen during curved, gate driving circuit (GIP) used to drive pixels can also be in bending state.
In traditional scheme, the case where viewing area is bent, the conventional design of progress are not considered for the design of gate driving circuit.Tradition side
In case, the reliability of gate driving circuit is lower, and gate driving circuit is easy the presence of driving exception, even results in the aobvious of display screen
Show exception.
Summary of the invention
Based on this, it is necessary to for the lower problem of the reliability of gate driving circuit in traditional scheme, provide a kind of aobvious
Show panel and display device.
A kind of display panel, comprising:
Substrate, the surface of the substrate have plane domain and bending region, the plane domain and the bending region
It is disposed adjacent；
The substrate includes at least one starting bending axis, and the starting bends axis and is set to the bending region and described
Between plane domain；
Second thin film transistor (TFT), is set to the bending region, the source electrode of second thin film transistor (TFT) to the side of drain electrode
Angle to the extending direction with the starting bending axis is 0 degree to 30 degree.
In one embodiment, direction and the starting of the source electrode of at least one second thin film transistor (TFT) to drain electrode
The extending direction for bending axis is parallel.
In one embodiment, the flow direction of the carrier of at least one second thin film transistor (TFT) and the starting
The extending direction for bending axis is parallel.
In one embodiment, second thin film transistor (TFT) is multiple, and the width of the multiple second thin film transistor (TFT) is long
Than difference, wherein the source electrode of maximum second thin film transistor (TFT) of breadth length ratio bends axis to the direction of drain electrode and the starting
Extending direction it is parallel.
In one embodiment, further includes:
Pixel unit, the pixel unit are set to the plane domain；
The pixel unit includes first film transistor and Organic Light Emitting Diode；The first film transistor driving
The organic light-emitting diode display shines.
In one embodiment, further includes:
Gate driving circuit is set to the bending region；
The gate driving circuit is used to control the Organic Light Emitting Diode in the plane domain according to setting side
Formula is shown；
The second transistor is set in the gate driving circuit.
In one embodiment, gate driving circuit includes:
Multiple scan control units, the scan control unit includes scan signal line, the scan signal line with it is described
Pixel unit connection；And
Multiple luminous controling units, the luminous controling unit include LED control signal line, the LED control signal
Line is connect with the pixel unit.
In one embodiment, the source electrode of the first film transistor bends axis to the direction of drain electrode and the starting
Extending direction is vertical.
A kind of display device, which is characterized in that including the display panel.
In one embodiment, the display device includes the plane domain and is located at the plane domain
The bending region of two of two sides；
The display device further includes two startings bending axis parallel to each other, and described two starting bending axis are located at
Two intersections in the bending region and the plane domain, the substrate is along the axial display of described two startings bending
The non-luminous surface of panel is bent.
A kind of display panel provided herein and display device.Due to second thin film transistor (TFT) source electrode to drain electrode
Direction and the angle of extending direction of the starting bending axis be 0 degree to 30 degree, therefore the load of second thin film transistor (TFT)
The angle for flowing the flow direction of son and the extending direction of the starting bending axis is 0 degree to 30 degree.When the display panel is formed
During display device, the bending region can be folded into side, reduce the area that non-display area occupies in display device.
In the bending process in the bending region, second thin film transistor (TFT) can keep good device property, to improve
The reliability of the gate driving circuit, so that the display panel has display state well.Second film simultaneously
Transistor keeps good device state, it is ensured that the service life of the display panel.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the display panel provided in the application one embodiment；
Fig. 2 is the structure and position view of the second thin film transistor (TFT) provided in the application one embodiment；
Fig. 3 is the structure and schematic diagram of the first film transistor provided in the application one embodiment；
Fig. 4 is the structural schematic diagram of the display panel provided in the application one embodiment；
Fig. 5 is the structural schematic diagram of the gate driving circuit provided in the application one embodiment；
Fig. 6 is the structural schematic diagram of the gate driving circuit provided in the application one embodiment；
Fig. 7 is the structural schematic diagram of the display device provided in the application one embodiment.
Drawing reference numeral explanation:
Display panel 10
Display device 20
Substrate 100
Plane domain 110
Bend region 120
First film transistor 130
First source electrode 131
First drain electrode 132
First grid 133
Second thin film transistor (TFT) 140
Second source electrode 141
Second drain electrode 142
Second grid 143
Starting bending axis 150
Organic Light Emitting Diode 160
Gate driving circuit 170
Scan control unit 171
Scan signal line 172
Pixel driver control unit 173
LED control signal line 174
Storage device 175
Specific embodiment
It is with reference to the accompanying drawings and embodiments, right in order to which the objects, technical solutions and advantages of the application are more clearly understood
The application is further elaborated.It should be appreciated that specific embodiment described herein is only used to explain the application, not
For limiting the application.
In recent years, with the fast development and application of information technology, radio mobile communication and information household appliances, people are to electronics
The dependence of product is growing day by day, more brings flourishing for various display technologies and display device.Display device has complete
The features such as planarization, light, thin, power saving, therefore be widely used.
In traditional scheme, in order to reduce the manufacturing cost of display device, and the purpose of narrow frame is realized whereby, manufactured
Directly gate driving circuit (i.e. GIP circuit, Gate in Panel) would generally be integrated on display panel in journey.Display surface
Plate generally includes display area for displaying images and the non-display area around display area.GIP circuit is generally positioned at
In non-display area, and the non-display area can be folded into the back side of viewing area.Easily cause GIP electric in the process of bending
Thin film transistor (TFT) fracture or failure in road, cause GIP circuit reliability lower.The reliability of GIP circuit is bad, by direct shadow
Ring the display effect of display device.Therefore, how to solve the problems, such as that the reliability of GIP circuit in existing display device is low, at
Those skilled in the art technical problems urgently to be resolved.
Based on this, present inventor's problem lower for the reliability of GIP circuit in traditional display device is mentioned
For a kind of display panel and display device, solves the lower technical problem of the reliability of GIP circuit.
Referring to Fig. 1, providing a kind of display panel 10 in the application one embodiment.The display panel 10 includes substrate
100, at least one starting bending axis 150, the second thin film transistor (TFT) 140.
The surface of the substrate 100 has plane domain 110 and bending region 120.The plane domain 110 and described curved
Folding area domain 120 is disposed adjacent.Starting bending axis 150 be set to the bending region 120 and the plane domain 110 it
Between.The starting bending axis 150 is the axis that the bending region 120 is bent relative to the plane domain 110.
Second thin film transistor (TFT) 140 is set to the substrate 100, and is distributed in the bending region 120.Described
The angle in the source electrode of two thin film transistor (TFT)s 140 to the direction of drain electrode and the extending direction of the starting bending axis 150 is 0 degree to 30
Degree.The source electrode of i.e. described second thin film transistor (TFT) 140 to drain electrode direction and it is described starting bend axis 150 extending direction it is sharp
Angle can be 0 degree to 30 degree.
The geomery of the substrate 100 is unlimited.The substrate 100 can be constituted for flexible bendable material.At one
In embodiment, the material of the substrate 100 is polyimides.The substrate 100 has plane domain 110 and bending region 120.
The plane domain 110 can be display area.The bending region 120 can be non-display area.In the bending region
In 120, specific driving circuit can be set.The bending region 120 can carry out curved relative to the plane domain 110
Folding.In one embodiment, the substrate 100 includes organic layer and the barrier layer of alternately laminated setting.The organic layer can be with
For polyimide layer.The barrier layer can be silicon oxide or silicon nitride layer, and the barrier layer is for preventing film layer by the external world
The pollution of environment.Increase the barrier layer in the substrate 100, and makes the organic layer and the barrier layer alternating layer
Folded setting, can increase the mechanical strength of the substrate 100, while film layer being prevented to be contaminated.
In the present embodiment, since the source electrode of second thin film transistor (TFT) 140 is bent to the direction of drain electrode and the starting
The angle of the extending direction of axis 150 is 0 degree to 30 degree, therefore the flow direction of the carrier of second thin film transistor (TFT) 140
Angle with the extending direction of the starting bending axis 150 is 0 degree to 30 degree.When the display panel 10 forms display device
In the process, the bending region 120 can be folded into side, reduce the area that non-display area occupies in display device.Described
Bend region 120 bending process in, due to second thin film transistor (TFT) 140 source electrode to drain electrode direction and the starting
The acute angle for bending the extending direction of axis 150 can be 0 degree to 30 degree, i.e., the source electrode of described second thin film transistor (TFT) 140 is to draining
Direction relative to it is described starting bending axis 150 angle it is smaller.Therefore it is curved the starting to be based in the bending region (120)
It rolls over during axis 150 bends, the structure of second thin film transistor (TFT) 140 is not easy to be broken because of bending, and described the
Two thin film transistor (TFT)s 140 can keep good device property, to improve the reliability of the gate driving circuit 170, make
Obtaining the display panel 10 has display state well.Second thin film transistor (TFT) 140 keeps good device shape simultaneously
State, it is ensured that the service life of the display panel 10.
In one embodiment, the display panel further includes pixel unit.The pixel unit is set to the plane
Region 110.The pixel unit includes first film transistor 130 and Organic Light Emitting Diode 160.The first film crystal
Pipe 130 drives the display of Organic Light Emitting Diode 160 to shine.The pixel unit may include multiple sub-pixels, sub-pixel
It can be blue subpixels, green sub-pixels and red sub-pixel.
In one embodiment, the first film transistor 130 is bent by source electrode to the direction of drain electrode and the starting
The extending direction of axis 150 is vertical.The flow direction of the carrier of the i.e. described first film transistor 130 and the starting bend axis
150 extending direction is vertical.
The carrier of the first film transistor 130 is flowed along first direction.The load of second thin film transistor (TFT) 140
Stream flows in a second direction.The first direction is vertical with the second direction.Attached drawing 1 is referred to, the first direction is
Direction where lateral arrows, the second direction are the direction where longitudinal arrow.Second thin film transistor (TFT) 140 can be with
It is formed gate driving circuit 170 (specific structure of the gate driving circuit 170 is referred to shown in Fig. 5 and Fig. 6).The grid
Pole driving circuit 170 is for generating the grid control signal for controlling the first film transistor 130.
In one embodiment, the source electrode of at least one second thin film transistor (TFT) 140 to drain electrode direction with it is described
The angle of the extending direction of starting bending axis 150 is 0 degree to 15 degree.Therefore second thin film transistor (TFT) 140 is in the bending
Smaller by being influenced in the bending process in region 120, second thin film transistor (TFT) 140 can keep good device shape
State.
In one embodiment, the source electrode of at least one second thin film transistor (TFT) 140 to drain electrode direction with it is described
The extending direction of starting bending axis 150 is parallel.I.e. the source electrode of at least one second thin film transistor (TFT) 140 to drain electrode direction
Angle with the extending direction of the starting bending axis 150 is 0 °.Therefore second thin film transistor (TFT) 140 is in the bent area
Smaller by being influenced in the bending process in domain 120, second thin film transistor (TFT) 140 can keep good device state.
The bending region 120 is the region for including the gate driving circuit 170.The substrate 100 is along described
Beginning bending axis 150 is bent, and the bending region 120 after bending is bent to flat not at one with the plane domain 110
In face.During the bending region 120 is bent, the device architecture of second thin film transistor (TFT) 140 will not influence.Tool
Body, the position of the starting bending axis 150 and quantity can be adjusted according to the position and quantity in the bending region 120
It is whole.For example the display panel 10 includes a bending region 120, can be set respectively in 120 two sides of bending region
Two starting bending axis 150 are set, can specifically be selected with reference to the design of the practical display panel 10.Compare again
Such as, the display panel 10 may include two plane domains 110 and three bending regions 120, and two described flat
Face region 110 is spaced apart by three bending regions 120.The display panel 10 can be realized folding, i.e. user can be with
Two plane domains 110 of selection are shown, also can choose any one region in two plane domains 110 into
The display of row picture.
In one embodiment, Fig. 1 is seen, the display panel 10 includes setting up separately in 110 two sides of plane domain
Two bending regions 120.Between two bending regions 120 and the plane domain 110, it is respectively set one
The starting bends axis 150.In the display panel 10, the direction of carrier and institute in second thin film transistor (TFT) 140
It is parallel to state second direction, the starting bending axis 150 is parallel with the second direction.When the bending region 120 is along described
When starting bending axis 150 is bent, the device performance of second thin film transistor (TFT) 140 will not influence.Due to the plane
Region 110 and without bending, therefore when the bending region 120 along the starting bend axis 150 bent when, will not
Influence the device performance of the first film transistor 130.
In the present embodiment, the starting bending axis is set between the bending region 120 and the plane domain 110
150, starting bending axis 150 is parallel with the second direction, do not limit the specific location of the starting bending axis 150 with
Quantity.Starting bending axis 150 is parallel with second thin film transistor (TFT) 140, when the bending region 120 is along described
When beginning bending axis 150 is bent, the device performance of second thin film transistor (TFT) 140 will not influence.The thin film transistor (TFT)
140 device performance is good, it is ensured that the gate driving circuit 170 has good drive control ability, to guarantee
The display panel 10 has good display effect.
Referring to Fig. 2, as a kind of preferable embodiment, on the basis of the above embodiment, second film
Transistor 140 includes the second source electrode 141, second drain electrode 142 and second grid 143.
Specifically, not limiting the type of second thin film transistor (TFT) 140.For example, second thin film transistor (TFT) 140
It can be N-type transistor, the electronics (one kind for belonging to carrier) in N-type transistor is flowed to described by second source electrode 141
Second drain electrode 142.For another example, second thin film transistor (TFT) 140 can be P-type transistor, and the hole in P-type transistor (belongs to
In one kind of carrier) by second source electrode 141 flow to it is described second drain electrode 142.
In the present embodiment, the flow direction of carrier and the starting bend axis 150 in second thin film transistor (TFT) 140
Extending direction it is parallel, i.e., it is parallel with the second direction.Further, in this embodiment second source electrode 141 is directed toward institute
The direction for stating the second drain electrode 142 is parallel with the second direction or second source electrodes 141 are directed toward in second drain electrode 142
Direction it is parallel with the second direction.The flow direction of carrier is that second drain electrode is flowed to from second source electrode 141
142, or second source electrode 141 is flowed to from second drain electrode 142.In the present embodiment, pass through second film crystal
The flow direction of carrier limits the position orientation of second thin film transistor (TFT) 140 in pipe 140.It is equivalent to further
Define the positional relationship of second thin film transistor (TFT) 140 and the starting bending axis 150.In the present embodiment, when described curved
When folding area domain 120 is bent along starting bending axis 150, the device of second thin film transistor (TFT) 140 will not influence
Performance.The device performance of second thin film transistor (TFT) 140 is good, it is ensured that the grid positioned at the bending region 120
Pole driving circuit 170 has good drive control ability, to guarantee that the display panel 10 has good display effect.
As a kind of preferable embodiment, on the basis of the above embodiment, second thin film transistor (TFT) 140 is
It is multiple.The breadth length ratio of the multiple second thin film transistor (TFT) 140 is different.Maximum second thin film transistor (TFT) 140 of breadth length ratio
Direction and the starting of source electrode to drain electrode to bend the extending direction of axis (150) parallel.The multiple second thin film transistor (TFT)
It include different second thin film transistor (TFT) 140 of breadth length ratio in 140.Specifically, the width of second thin film transistor (TFT) 140 is long
Than bigger, the driving current of device (N-type transistor or P-type transistor) is bigger.In the present embodiment, second film crystal
Pipe 140 can have multiple, and multiple second thin film transistor (TFT)s 140 can form the gate driving after being electrically connected with capacitor
Circuit 170.It can control the display state of the display panel 10 by the gate driving circuit 170.Second film is brilliant
In body pipe 140, the maximum thin film transistor (TFT) 140 of breadth length ratio is parallel with starting bending axis 150.
In the present embodiment, it is possible to understand that near the position of the non-starting bending axis 150 in the bending region 120
The device direction of the thin film transistor (TFT) 140 can be arbitrarily arranged.Do not influencing the drive of grid described in the bending region 120
Under the premise of the device performance of dynamic circuit 170, in second thin film transistor (TFT) 140, lesser second film of breadth length ratio
The setting direction of transistor 140 can arbitrarily select to determine.In the present embodiment, when the bending region 120 is along the starting
When bending axis 150 is bent, lesser second thin film transistor (TFT) 140 of breadth length ratio is to the gate driving circuit 170
It influences smaller.In the present embodiment, the gate driving circuit 170 in the bending region 120 can guarantee good driving control
Ability processed, to guarantee that the display panel 10 has good display effect.
Referring to Fig. 3, as a kind of preferable embodiment, on the basis of the above embodiment, the first film
Transistor 130 includes the first source electrode 131, first drain electrode 132 and first grid 133.
Specifically, not limiting the type of the first film transistor 130.For example, the first film transistor 130
It can be N-type transistor, the electronics (one kind for belonging to carrier) in N-type transistor is flowed to described by first source electrode 131
First drain electrode 132.For another example, the first film transistor 130 can be P-type transistor, and the hole in P-type transistor (belongs to
In one kind of carrier) by first source electrode 131 flow to it is described first drain electrode 132.
In the present embodiment, the flow direction of carrier and the starting bend axis 150 in the first film transistor 130
Extending direction it is vertical.The flow direction of carrier is that first drain electrode 132, Huo Zhecong is flowed to from first source electrode 131
First drain electrode 132 flows to first source electrode 131.In the present embodiment, first source electrode 131 is directed toward first drain electrode
132 direction is parallel with the first direction or direction and the institute of first source electrodes 131 are directed toward in first drain electrode 132
It is parallel to state first direction.In the present embodiment, by the flow direction of carrier in the first film transistor 130 to limit
State the position orientation of first film transistor 130.It is equivalent to and further defines the first film transistor 130 and institute
State the positional relationship of starting bending axis 150.
Referring to Fig. 4, as a kind of preferable embodiment, it is on the basis of the above embodiment, the multiple organic
Light emitting diode 160 is set to the plane domain 110.The multiple first film transistor 130 drives the multiple organic
The display of light emitting diode 160 shines.
In the present embodiment, the arrangement mode of the multiple Organic Light Emitting Diode 160, which can be, can show red, green and blue
Any pixel arrangements of trichromatic some sub-pixels.The multiple first film transistor 130, which drives, the multiple to be had
Electric connection mode and drive control mode when the display of machine light emitting diode 160 shines, herein also without specifically limiting.This
In embodiment, it is ensured that carry out good show by the multiple Organic Light Emitting Diode 160 in the plane domain 110
Show.
Fig. 5 and Fig. 6 are please referred to, as a kind of preferable embodiment, on the basis of the above embodiment, the display
Panel 10 further includes gate driving circuit 170.The gate driving circuit 170 is set to the substrate 100, and is located at described curved
Folding area domain 120.The gate driving circuit 170 is used to control the multiple organic light-emitting diodes in the plane domain 110
Pipe 160 is shown according to setting means.The second transistor 140 is set in the gate driving circuit 170.
In one embodiment, the gate driving circuit 170 includes that multiple scan control units 171 and multiple pixels are driven
Dynamic control unit 173.As shown in figure 5, each scan control unit 171 includes sweeping in the multiple scan control unit 171
Signal wire 172 is retouched, the scan signal line 172 is electrically connected with the pixel unit.As shown in fig. 6, the multiple pixel driver
Each pixel driver control unit 173 includes LED control signal line 174, the LED control signal in control unit 173
Line 174 is electrically connected with the pixel unit.
It include multiple energy storage devices 175 in the gate driving circuit 170.The multiple energy storage device 175 is respectively set
In the substrate 100, and it is located at the bending region 120.The scan control unit 171 includes A institute being electrically connected to each other
State the second thin film transistor (TFT) 140 and B energy storage device 175.Multiple storage devices 175 can be the capacitor of different capabilities
Device.A second thin film transistor (TFT)s 140 being electrically connected to each other and B energy storage device 175 can be formed described in capable of controlling
The scanning signal of 130 switch state of first film transistor.The multiple pixel driver control unit 173 includes being electrically connected to each other
C second thin film transistor (TFT)s 140 and the D energy storage devices 175.C second films being electrically connected to each other are brilliant
Body pipe 140 and the D energy storage devices 175, can form the luminous control for controlling 130 switch state of first film transistor
Signal processed.Specifically, A, B, C and D represent the particular number of device, the quantity of device can be research and development technology personnel's designed, designed
It is formed.
In the present embodiment, the gate driving circuit 170 may include multiple second thin film transistor (TFT)s 140 and multiple
The storage device 175.The gate driving circuit 170 is believed by the scan signal line 172 and the light emitting control respectively
Number line 174 issues scanning signal and LED control signal.
Referring to Fig. 7, in one embodiment, the application also provides a kind of display device 20.The display device 20 is wrapped
Include display panel 10 described in any of the above-described.
In the present embodiment, the display device 20 can be set to the mobile phone display screen of narrow frame or Rimless.It is described
Display device 20 may be arranged as the display screen folded.Certainly, the display device 20 provided by the embodiments of the present application can be with
For any product having a display function such as tablet computer, television set, display, laptop, Digital Frame, navigator or
Component.Other essential component parts for the display device 20 are that those skilled in the art should manage
What solution had, this will not be repeated here, also should not be used as the limitation to the application.
Please continue to refer to Fig. 7, as a kind of preferable embodiment, on the basis of the above embodiment, the display
Device 20 includes the plane domain 110 and two bending regions for being located at 110 two sides of plane domain
120。
The display device 20 further includes two startings bending axis 150 parallel to each other.The display device 20 is along described
Two starting bending axis 150 are bent to the non-luminous surface of the display device 20, and described two starting bending axis 150 divide
It Wei Yu not two bending regions 120.
In the present embodiment, the mobile phone display screen of narrow frame or Rimless is may be implemented in the display device 20 provided.
Along described two startings bending axis 150 carry out bending process in, will not influence the gate driving circuit 170 structure,
Device performance and drive control method.The display device 20 can have good display effect, and guarantee longer make
Use the service life.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The several embodiments of the application above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the concept of this application, various modifications and improvements can be made, these belong to the protection of the application
Range.Therefore, the scope of protection shall be subject to the appended claims for the application patent.
Claims (10)
1. a kind of display panel characterized by comprising
The surface of substrate (100), the substrate (100) has plane domain (110) and bending region (120), the plane area
Domain (110) and the bending region (120) are disposed adjacent；
The substrate (100) includes at least one starting bending axis (150), and starting bending axis (150) is set to described curved
Between folding area domain (120) and the plane domain (110)；
Second thin film transistor (TFT) (140) is set to the bending region (120), the source electrode of second thin film transistor (TFT) (140)
Angle to the extending direction in the direction and starting bending axis (150) of drain electrode is 0 degree to 30 degree.
2. display panel as claimed in claim 2, which is characterized in that at least one second thin film transistor (TFT) (140)
The direction of source electrode to drain electrode is parallel with the starting bending extending direction of axis (150).
3. display panel as described in claim 1, which is characterized in that at least one second thin film transistor (TFT) (140)
The flow direction of carrier is parallel with the starting bending extending direction of axis (150).
4. display panel as described in claim 1, which is characterized in that second thin film transistor (TFT) (140) be it is multiple, it is described
The breadth length ratio of multiple second thin film transistor (TFT)s (140) is different, wherein maximum second thin film transistor (TFT) (140) of breadth length ratio
Direction and the starting of source electrode to drain electrode to bend the extending direction of axis (150) parallel.
5. display panel as described in claim 1, which is characterized in that further include:
Pixel unit is set to the plane domain (110)；
The pixel unit includes first film transistor (130) and Organic Light Emitting Diode (160)；
The first film transistor (130) drives Organic Light Emitting Diode (160) display to shine.
6. display panel as claimed in claim 5, which is characterized in that further include:
Gate driving circuit (170) is set to the bending region (120)；
The gate driving circuit (170) is used to control the Organic Light Emitting Diode (160) in the plane domain (110)
It is shown according to setting means；
The second transistor (140) is set in the gate driving circuit (170).
7. display panel as claimed in claim 6, which is characterized in that gate driving circuit (170) includes:
Multiple scan control units (171), the scan control unit (171) include scan signal line (172), the scanning letter
Number line (172) is connect with the pixel unit；And
Multiple luminous controling units (173), the luminous controling unit (173) include LED control signal line (174), the hair
Optical control signal line (174) is connect with the pixel unit.
8. display panel as claimed in claim 5, which is characterized in that the source electrode of the first film transistor (130) to leakage
The direction of pole is vertical with the starting bending extending direction of axis (150).
9. a kind of display device, which is characterized in that including display panel (10) such as of any of claims 1-8.
10. display device as claimed in claim 9, which is characterized in that two bending regions (120) are located at described
The two sides of plane domain (110)；
The display device (20) further includes two startings bending axis (150) parallel to each other, and described two startings bend axis
(150) two intersections of bending region (120) and the plane domain (110), substrate (100) edge are located at
Described two starting bendings axis (150) Xiang Suoshu display panel (10) non-luminous surface is bent.
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| CN201910575068.5A CN110265465B (en) | 2019-06-28 | 2019-06-28 | Display panel and display device |
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| CN201910575068.5A CN110265465B (en) | 2019-06-28 | 2019-06-28 | Display panel and display device |
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| CN112700728A (en) * | 2019-10-23 | 2021-04-23 | Oppo广东移动通信有限公司 | Display module and electronic equipment |
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| Publication number | Publication date |
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| CN110265465B (en) | 2021-04-20 |
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