CN110264958A - Display device - Google Patents

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Publication number
CN110264958A
CN110264958A CN201910555298.5A CN201910555298A CN110264958A CN 110264958 A CN110264958 A CN 110264958A CN 201910555298 A CN201910555298 A CN 201910555298A CN 110264958 A CN110264958 A CN 110264958A
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China
Prior art keywords
circuit
detection
signal
transistor
display device
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CN201910555298.5A
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CN110264958B (en
Inventor
王雅榕
王贤军
苏松宇
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AU Optronics Corp
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AU Optronics Corp
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    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3258Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the voltage across the light-emitting element

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)

Abstract

The present invention provides a kind of display device, comprising: display panel, drive module and grid control circuit.Display panel includes: M pixel circuit and M detection enable circuit.Grid control circuit includes scanning circuit and mode selection circuit.Scanning circuit provides scanning signal in scan signal line;Mode selection circuit receives scanning signal, bias, the first input signal inverting each other and the second input signal.Mode selection circuit includes: that first mode selection path and second mode select path.First mode selects path when display device is display pattern, and according to bias and the first input signal, forbidden energy detects enable circuit.Second mode selects path when display device is detection pattern, and according to scanning signal and the second input signal, enable detects enable circuit.

Description

Display device
Technical field
The present invention relates to a kind of display devices, more particularly to a kind of display device that can compensate for brightness.
Background technique
The more traditional liquid of thickness of Organic Light Emitting Diode (Organic Light-Emitting Diode, referred to as OLED) It is brilliant thinner, quite it is suitble to emphasize frivolous portable running gear.Therefore, it is also become increasingly popular using the display device of OLED.
Ideally, each pixel on display panel is when receiving identical data-signal, all OLED It should show identical brightness.However, the pixel circuit characteristic positioned at different location is not fully identical in display panel. Such phenomenon heterogeneous causes display panel when showing picture, and there are current difference and luminance difference, shapes between each OLED The phenomenon that at brightness irregularities (mura).
In addition, display panel, after long-time use, the critical voltage of OLED may also generate drift.Due to each picture The used picture data shown of plain circuit is not identical, as time goes by, the critical voltage of the LED in each pixel circuit Drift degree is not also identical.Also therefore, even if the data-signal voltage that is provided to the grid of each pixel transistor is identical, But the OLED in different pixel circuits can't generate identical brightness.
As previously mentioned, the circuit characteristic of each pixel circuit in display panel is not quite similar with state.To using OLED Display device for, how to enable display panel normally show picture become an important topic.
Summary of the invention
The invention relates to a kind of display device, can in response to each pixel transistor state and compensate, therefore can Promote the display effect of display panel.
According to an aspect of the invention, it is proposed that a kind of display device.Display device includes: display panel, drive module, with And grid control circuit.Display panel includes M pixel circuit and M detection enable circuit.Each pixel circuit is electric respectively It is connected to each detection enable circuit, and M is positive integer.Drive module is electrically connected by M data signal wire in pixel Circuit, and be electrically connected by M bar state signal lines in detection enable circuit.Grid control circuit passes through scanning Signal wire and be electrically connected to pixel circuit, and detection is electrically connected to by scan signal line and detection pattern enable signal wire Enable circuit.Grid control circuit includes: scanning circuit and mode selection circuit.Scanning circuit provides scanning in scan signal line Signal.Mode selection circuit receives scanning signal, bias, the first input signal and the second input signal.Wherein, the first input letter It is number inverting each other with the second input signal.Mode selection circuit includes: that first mode selection path and second mode select path. First mode selects path when display device is display pattern, and according to bias and the first input signal, M detection of forbidden energy is caused It can circuit.Second mode selects path when display device is detection pattern, is caused according to scanning signal with the second input signal It can M detection enable circuit.
Detailed description of the invention
Fig. 1 is detection enable circuit according to an embodiment of the present invention and detection circuit structural schematic diagram.
Fig. 2 is the flow chart of detection enable circuit and detection circuit according to an embodiment of the present invention.
Fig. 3 A is pixel circuit P of the invention(m,n)Schematic diagram in display pattern.
Fig. 3 B is waveform diagram corresponding with Fig. 3 A.
Fig. 4 A is pixel circuit and detection enable circuit detection LED of the invention(m,n)Schematic diagram.
Fig. 4 B is waveform diagram corresponding with Fig. 4 A.
Fig. 5 A is detection enable circuit detection pixel transistor Tp1 of the invention(m,n)Schematic diagram.
Fig. 5 B is waveform diagram corresponding with Fig. 5 A.
Fig. 6 is the display device schematic diagram of detection the enable circuit and mode selection circuit of the embodiment of the present invention.
Fig. 7 is the signal waveforms of display device shown in fig. 6.
Fig. 8 is the detection enable circuit of the embodiment of the present invention and detection circuit is in the flow chart that compensation detects program.
Wherein, appended drawing reference are as follows:
Driving circuit 29, SD1、SDm、SDM
Data-signal (line) data, datam、data1、dataM
State detection signal DET, DETm、DET1、DETM、DET2
Sequence controller 20,53 pixel circuits 21
Pixel unit 22 detects enable circuit 23
Detection node Ns, Ns(m,n)
Detection pattern enable signal (line) EN, ENn、EN1、ENN
Detect transistor Mdet, Mdet(m,n)
Grid control circuit 26, GC1、GCn、GCN
Mode selection circuit 25, MSCnScanning circuit 27
First mode selects 25a second mode in path to select path 25b
Selection transistor Ts1, Ts2, Ts3, Ts4, Ts1n、Ts2n、Ts3n、Ts4n
Electric capacity of voltage regulation C1 bias Vbs
Input signal IN1, IN2
Scanning signal SCANn、SCAN1、SCANN
Step S301, S303, S305, S310, S309, S307, S311, S312, S313, S313a, S313b, S313c, S315、S316、S317、S318、S319
Tdis during picture data voltage Vdis is shown
Pixel transistor Tp1(m,n)、Tp2(m,n)Light-emitting diode LED(m,n)
Pixel circuit P(m,n)、P(1,1)、P(1,N)、P(m,1)、P(M,1)、P(M,N)
Supply voltage Vdd ground voltage Vss
Storage capacitors Cs
Detect enable circuit SC(m,n)、SC(1,1)、SC(1,N)、SC(m,1)、SC(M,1)、SC(M,N)
Enclose CV1, CV2, CV3, CRL1, CRL2, CRLN at choosing
Time point t1, t2, t1', t2', t1 ", t2 "
Low level L high levels H
Td_led during LED data voltage Vdata_led LED is detected
Td_tft during TFT data voltage Vdata_tft TFT is detected
51 display panel 57 of drive module
55 grid control signal Sgc of grid control module
Source control signal Ssc display device 50
Test data voltage Vdata_tst
Tdet_r during column detection1、Tdet_r2、Tdet_rN
Specific embodiment
In order to have clearer understanding, special embodiment below to display device of the invention, and cooperate institute's accompanying drawings detailed Carefully it is described as follows:
Using OLED display panel in, there is because each pixel circuit in OLED state be not quite similar and Need the phenomenon that compensating.For this purpose, the present invention proposes the conception that the characteristic for pixel circuit compensates.To obtain pixel The display device of the characteristic of circuit, the embodiment of the present invention provides two kinds of operation modes, display pattern and detection pattern.
When display device is in display pattern, display panel can normally show image frame.When display device is in inspection When survey mode, display panel pause display image frame.In a display device, setting detection enable circuit (sensing Enablement circuit, referred to as SC), the characteristic to detection pixel circuit.Thereafter, sequential control circuit or image Controller, can by these Characteristics Detection results adjust that it controls the display panel in the way of.That is, by way of compensation Eliminate the inconsistent phenomenon of pixel circuit characteristic.
Fig. 1 is detection enable circuit according to an embodiment of the present invention and detection circuit structural schematic diagram.As shown in Figure 1, root According to the embodiment of the present invention, sequence controller 20 can utilize driving circuit 29 and 26 detection pixel circuit 21 of grid control circuit State.For purposes of illustration only, herein, with identical symbology signal wire and the signal online in signal.For example, with data Indicate data signal line and data-signal.
Grid control circuit 26 includes scanning circuit 27 and mode selection circuit (mode selection circuit, letter Referred to as MSC) 25.Wherein, scanning circuit 27 is for generating and transmitting scanning signal SCAN to pixel unit 22, and model selection is electric Road 25 generates and transmits detection pattern enable signal EN to pixel unit 22.
In Fig. 1, defining each pixel unit 22 includes a pixel circuit 21 and a detection enable circuit 23.Picture Plain circuit 21 is electrically connected to detection enable circuit 23 by detection node Ns, and detects enable circuit 23 and be electrically connected to mode choosing Select circuit 25.
Pixel circuit 21 receives data-signal data from driving circuit 29 by data signal line data.According to data-signal The level of data changes, and there may be brightness changes for the Light-emitting diode LED in pixel circuit 21.On the other hand, enable is detected 23 slave pattern selection circuit 25 of circuit receive detection pattern enable signal EN after, according to detection pattern enable signal EN level and Selectivity generates state detection signal DETm
In this embodiment, it is assumed that detection enable circuit 23 includes detection transistor Mdet, and detect transistor Mdet's Grid is controlled by detection pattern enable signal EN, and the other both ends of detection transistor Mdet are then electrically connected in detection node Ns and state detection signal line DET.When practical application, the implementation of detection enable circuit 23 is not limited thereto.
It holds, when detection pattern enable signal EN is first level (for example, low level L), detection transistor Mdet is It closes.Conversely, detection transistor Mdet is to lead when detection pattern enable signal EN is second level (for example, high levels H) Logical, detection enable circuit 23 is enabled, and the voltage of signal lines DET is determined by detection node Ns.
Mode selection circuit 25 and the equal self-scanning circuit 27 of pixel circuit 21 receive scanning signal SCAN.In addition, mode is selected It selects circuit 25 and also receives bias Vbs and input signal IN1, IN2 from external.Mode selection circuit 25 according to scanning signal SCAN, Bias Vbs and input signal IN1, IN2 and after determining the level of detection pattern enable signal EN, will test mode enable signal EN It is sent to detection enable circuit 23.
Mode selection circuit 25 includes that first mode selection path 25a and second mode select path 25b.Wherein, first Model selection path 25a is used to generate the detection pattern enable signal EN of the first level;Second mode selection path 25b is for producing The detection pattern enable signal EN of raw second level.It includes selection transistor Ts1, Ts2 that first mode, which selects path 25a,.Second Model selection path 25b includes selection transistor Ts3, Ts4 and electric capacity of voltage regulation C1.Wherein, selection transistor Ts1, Ts2, Ts3, Ts4 can be NMOS transistor.Then illustrate the connection inside first mode selection path 25a and second mode selection path 25b Relationship and its purposes, further details can be found in native 3A, 3B, 4A, 4B, 5A, 5B.
In first mode selection path 25a, for receiving bias Vbs, the other end is electrically connected for one end of selection transistor Ts1 It is connected to selection transistor Ts4, electric capacity of voltage regulation C1 and detection enable circuit 23.One end of selection transistor Ts2 is for receiving bias Vbs, the other end are electrically connected to selection transistor Ts3 and electric capacity of voltage regulation C1.The gate terminal of selection transistor Ts1, Ts2 receive defeated Enter signal IN1.
In second mode selection path 25b, one end of selection transistor Ts3 is connected with control terminal, and defeated for receiving Enter signal IN2, the other end is then electrically connected to selection transistor Ts4 and electric capacity of voltage regulation C1.One end of selection transistor Ts4 is for passing Send detection pattern enable signal EN, the other end for receiving scanning signal SCAN, and gate terminal be then connected to electric capacity of voltage regulation C1 with Selection transistor Ts3.
Letter speech, first mode selects path 25a to be used in display mode, according to bias Vbs and input signal IN1 The level that will test mode enable signal EN is set as the first level.Related, enable circuit 23 is detected according to the first level Detection pattern enable signal EN and stop generate state detection signal DET.On the other hand, second mode selection path 25 is used for Under detection pattern, the level that will test mode enable signal EN according to input signal IN2 is set as the second level.Related, It detects enable circuit 23 and state detection signal DET is generated according to the detection pattern enable signal EN of the second level.Wherein, no matter It is that in display pattern or in a detection mode, input signal IN1, IN2 is inverting each other.
Fig. 2 is the flow chart of detection enable circuit and detection circuit according to an embodiment of the present invention.As shown in Fig. 2, firstly, After display device is switched on (step S301), sequence controller 20 judges whether display panel enters display pattern (step S303).If the judging result of step S303 is affirmative, sequence controller 20 controls driving circuit 29 and grid control circuit 26, Display panel is set to execute the relevant operation (step S305) (Fig. 3 A, 3B) of display pattern.If the judging result of step S303 is no Fixed, then display panel executes the relevant operation (S310) (Fig. 4 A, 4B, 5A, 5B) of detection pattern.Step S310 corresponds to display surface Pixel circuit on plate is in the situation of detection pattern.About the further details of step S310, following explanation is please referred to.
In some applications, sequence controller 20 can also just judge whether display panel answers after display pattern Into detection pattern (step S307).If the judging result of step S307 is negative, process terminates.If the judgement of step S307 As a result it is affirmative, thens follow the steps S310.
In general, the pixel circuit on display panel is arranged with array manner.For convenience, it is assumed that display panel includes row Multiple pixel circuits of M row and N column are classified as, and M, N are positive integer.Illustrate below to be located at the pixel circuit of m row and the n-th column P(m,n)For, wherein m≤M, and n≤N.
Herein, display panel is likely to be at display pattern or detection pattern.Then, with 3A, 3B figure pixels illustrated Circuit P(m,n)Signal intensity in display mode;With Fig. 4 A, 4B pixels illustrated circuit P(m,n)In (the LED inspection of the first detection pattern Survey mode) under signal intensity;And with Fig. 5 A, 5B pixels illustrated circuit P(m,n)In the second detection pattern (TFT detection pattern) Under signal intensity.Wherein, Fig. 3 A, 4A, 5A are pixel circuit (pixel circuit, referred to as P), detect enable circuit 23 With the operational scenario of mode selection circuit 25 in each mode, and Fig. 3 B, 4B, 5B be coherent signal waveform diagram.Those waveforms The waveform of figure is from top to bottom respectively data-signal datam, scanning signal SCANn, bias Vbs, input signal IN1, IN2, detection Mode enable signal ENn, state detection signal DETm
Referring to Fig. 3 A, 3B.Fig. 3 A is pixel circuit P(m,n)Schematic diagram in display pattern.Fig. 3 B be and Fig. 3 A Corresponding waveform diagram.Pixels illustrated circuit P individually below(m,n), detection enable circuit SC(m,n)With mode selection circuit MSC(m,n) The state of interior element in display mode.
Pixel circuit P(m,n)Including Light-emitting diode LED(m,n), pixel transistor Tp1(m,n)、Tp2(m,n), and storage electricity Hold (storage capacitor) Cs.Light-emitting diode LED(m,n)Cathode be connected to ground voltage Vss.Storage capacitors Cs's Both ends are respectively electrically connected to pixel transistor Tp1(m,n)Grid and source electrode.
Pixel transistor Tp1(m,n)Drain electrode receive supply voltage Vdd;Pixel transistor Tp1(m,n)Grid be electrically connected to Pixel transistor Tp2(m,n)Source electrode;And pixel transistor Tp1(m,n)Source electrode via detection node Ns(m,n)It is electrically connected to luminous Diode (LED)(m,n)Anode.Pixel transistor Tp1(m,n)Relationship between source voltage Vs and grid voltage Vg, not only influences Pixel transistor Tp1(m,n)Conducting, also related influence Light-emitting diode LED(m,n)It is whether shinny.That is, state-detection Signal DETmVoltage can reflect out, pixel transistor Tp1(m,n)With Light-emitting diode LED(m,n)State.In pixel circuit P(m,n)In, pixel transistor Tp1(m,n)With Light-emitting diode LED(m,n)Characteristic may influence pixel circuit P(m,n)Brightness. It is event, the state detection signal DET of embodiment of this casemIt can be used for detection pixel transistor Tp1(m,n)With Light-emitting diode LED(m,n) Characteristic.
Pixel transistor Tp2(m,n)Drain electrode be electrically connected to data-signal datam, and its grid is electrically connected with source electrode In scanning signal SCANnWith pixel transistor Tp1(m,n)Grid.As shown in Figure 3A, as pixel circuit P(m,n)It is selected for showing When showing picture, with pixel circuit P(m,n)Corresponding scanning signal SCANnFor high levels H.At this point, pixel transistor Tp2(m,n)By because It is connected by high levels H that grid receives, and then by data-signal datamIt is sent to pixel transistor Tp1(m,n)Grid. Related, pixel transistor Tp1(m,n)As in gate data signal datamVoltage and be connected, and then generate flow through hair Optical diode LED(m,n)Conducting electric current.At this point, Light-emitting diode LED(m,n)Brightness depend on data-signal datamElectricity Pressure.
In mode selection circuit MSCnIn, belong to the selection transistor Ts1 of first mode selection path 25an、Ts2n, because Grid receives the input signal IN1 of high levels H and is connected;Belong to the selection transistor Ts3 of second mode selection path 25bn、 Ts4n, closed because grid receives the input signal IN2 of low level L.With selection transistor Ts1nConducting, bias Vbs warp By selection transistor Ts1nIt is sent to detection enable circuit SC(m,n).Also, because selection transistor Ts4nIt is high for the reason of closing The scanning signal SCAN of level HnAnd it is unlikely to influence the level of detection pattern enable signal EN.Accordingly, in display mode, it examines The level of survey mode enable signal EN is only determined by first mode selection path.Due to the reason that bias Vbs is low level L, inspection Survey transistor Mdet(m,n)Grid the detection pattern enable signal EN of low level L is received via electric capacity of voltage regulation C1, thus to close State.Also therefore, state detection signal DETmTdis can't be sent to driving circuit 29 during display.
In time point t1 to Tdis during the display of time point t2, data-signal data it can be seen from Fig. 3 BmVoltage can be with Pixel circuit P(m,n)Picture brightness to display and it is different, this sentences picture data voltage Vdis and represents number under display pattern It is believed that number datam.At this point, scanning signal SCANnFor high levels H;Bias Vbs is low level L;Input signal IN1 is high levels H; Input signal IN2 is low level L;Detection pattern enable signal ENnFor low level L.According to preceding description it is known that showing Period Tdis, detection pattern enable signal ENnLevel be to be codetermined by bias Vbs and input signal IN1.This sentences circle choosing Place CV1 represents bias Vbs, input signal IN1 and detection pattern enable signal ENnBetween relationship.In addition, because in display mould Under formula, transistor Mdet is detected(m,n)It is in off state, detects enable circuit SC(m,n)And it can't outputs state detection signal DETm
Then pixels illustrated circuit P(m,n)In a detection mode the case where.When display device is in detection pattern, pixel Circuit P(m,n)It is likewise maintained at enabled status, but pixel circuit P(m,n)It is not to be received from data-signal data in this mode Actual picture data voltage Vdis, but receive LED data voltage Vdata_led or the TFT data voltage of detection Vdata_tft。
As previously mentioned, detection pattern can further discriminate between as the first detection pattern and two type shape of the second detection pattern.? Under first detection pattern, 29 detection pixel circuit P of driving circuit(m,n)Interior Light-emitting diode LED(m,n)State (such as Fig. 4 A, 4B It is shown);Under the second detection pattern, 29 detection pixel circuit P of driving circuit(m,n)Interior pixel transistor Tp1(m,n)(as schemed Shown in 5A, 5B).
Referring to Fig. 4 A, 4B.Fig. 4 A is detection enable circuit SC(m,n)Under the first detection pattern, detection luminous two Pole pipe LED(m,n)The schematic diagram of state.Fig. 4 B is waveform diagram corresponding with Fig. 4 A.Pixels illustrated circuit P individually below(m,n), inspection Survey enable circuit SC(m,n)With mode selection circuit MSC(m,n)State of the interior element under the first detection pattern.
As pixel circuit P(m,n)When in the first detection pattern, scanning signal SCANnFor high levels H.Therefore, pixel transistor Pipe Tp2(m,n)For on state.At the same time, pixel transistor Tp2(m,n)It also can be from data signal line datamReceive LED data Voltage Vdata_led.Therefore, the pixel transistor Tp2 of conducting(m,n)LED data voltage Vdata_led can be sent to pixel crystalline substance Body pipe Tp1(m,n)Grid.
At this point, in pixel circuit P(m,n)In, data-signal datamVoltage pass through pixel transistor Tp2(m,n)With and store In storage capacitors Cs, in detection node Ns(m,n)Though voltage be enough to make Light-emitting diode LED(m,n)It shines.But pixel transistor Pipe Tp1(m,n)Grid voltage Vg and source voltage Vs between cross-pressure it is too low and can not switch on pixel transistor Tp1(m,n).By In pixel transistor Tp1(m,n)To close, therefore the data voltage data inputted in this stagemIt will not influence detection section Point Ns(m,n)Voltage.Therefore, pixel transistor Tp1 at this time(m,n)Source voltage Vs reflects merely Light-emitting diode LED(m,n) Cross-pressure.
For this purpose, pixel transistor Tp1(m,n)Grid and source electrode between pressure difference (Vgs) be necessarily less than pixel transistor Tp1(m,n)Critical grid voltage Vth, and pixel transistor Tp1(m,n)Grid and drain electrode between pressure difference (Vgd) must be small In pixel transistor Tp1(m,n)Critical grid voltage Vth, that is, Vgs < Vth and Vgd < Vth.Alternatively, if pixel transistor Tp1(m,n)Grid voltage Vg be lower than Light-emitting diode LED(m,n)Critical voltage when, pixel transistor Tp1(m,n)It is also maintained at Closed state.
In mode selection circuit MSCnIn, belong to the selection transistor Ts1 in first mode selection pathn、Ts2n, because of grid Pole receives the input signal IN1 of low level L and closes;Belong to the selection transistor Ts3 in second mode selection pathn、Ts4n, because For grid receives the input signal IN2 of high levels H and is connected.Because of selection transistor Ts3n、Ts4nThe reason of conducting, high levels H Scanning signal SCANnVia selection transistor Ts4nIt is sent to detection transistor Mdet(m,n)Grid, and as detection pattern Enable signal ENnIt uses.
On the other hand, due to selection transistor Ts1nThe reason of closing is maintained under the first detection pattern, bias Vbs is simultaneously It does not turn on to detection pattern enable signal wire ENn.Therefore, in display mode, detection pattern enable signal ENnLevel by Scanning signal SCANnIt is codetermined with input signal IN2.As shown in Figure 4 A, due to detection pattern enable signal ENnIt is at this moment High levels H detects transistor Mdet(m,n)It will be connected, that is, according to pixel transistor Tp1(m,n)Source voltage Vs generate shape State detects signal DETm.Wherein, pixel transistor Tp1(m,n)Source voltage Vs corresponds to Light-emitting diode LED(m,n)State.
It can be seen from Fig. 4 B during time point t1 ' to time point t2 ' this section of LED detection Td_led, data-signal datam Voltage be LED data voltage Vdata_led.LED data voltage is not enough to pixel transistor conducting Tp1(m,n).At this point, scanning Signal SCANnFor high levels H;Bias Vbs is low level L;Input signal IN1 is low level L;Input signal IN2 is high levels H;Detection pattern enable signal ENnFor high levels L.Accordingly, state detection signal line DETmBy the detection transistor by conducting Mdet(m,n)Receive detection node Ns(m,n)Voltage after, will test node Ns(m,n)Voltage reach driving circuit 29.Accordingly, when Sequence controller 20 is just able to grasp Light-emitting diode LED(m,n)State.
According to the explanation of Fig. 4 A it is known that LED detection during Td_led, detection pattern enable signal ENnLevel It is by scanning signal SCANn, input signal IN2 codetermines (as enclosed at choosing shown in CV2).This sentences arrow direction and represents input Signal IN2 and detection pattern enable signal ENnBetween relationship.
Referring to Fig. 5 A, 5B.Fig. 5 A is detection enable circuit SC(m,n)Under the second detection pattern, detection pixel is brilliant Body pipe Tp1(m,n)The schematic diagram of state.Fig. 5 B is waveform diagram corresponding with Fig. 5 A.
To mode selection circuit MSCnWith detection enable circuit SC(m,n)For, the level of signal and the state of element exist The time point t1 ' of Fig. 4 A between time point t2 ' LED detection during between Td_led, with the time point t1 " to time point t2 " of Fig. 5 A Td_tft is identical during TFT is detected, therefore the level of and will not be described here in detail its element state and signal.Similarly, it is detected in TFT Period Td_tft, detection pattern enable signal ENnLevel be also by scanning signal SCANn, input signal IN2 codetermine (such as It encloses at choosing shown in CV3).
On the other hand, the pixel circuit P in Fig. 5 A, 5B(m,n)In element state also all with the pixel circuit in Fig. 4 A, 4B P(m,n)It is identical.According to an embodiment of the invention, the first detection pattern and the second detection pattern the difference is that, data-signal datamThe voltage transmitted during TFT detection is not LED data voltage Vdata_led, but TFT data voltage Vdata_ tft.As data-signal datamWhen transmitting TFT data voltage Vdata_tftt, pixel transistor Tp1(m,n)Grid voltage Vg with Though the pressure difference between source voltage Vs is enough switch on pixel transistor Tp1(m,n), but pixel transistor Tp1(m,n)Source voltage Vs Still it is not enough to switched-on light emitting diodes LED(m,n).Due to Light-emitting diode LED(m,n)In this case and the reason that does not turn on, this When pixel transistor Tp1(m,n)Source voltage Vs reflects merely pixel transistor Tp1(m,n)Characteristic.Accordingly, state-detection is believed Number line DETmBy the detection transistor Mdet by conducting(m,n)Receive detection node Ns(m,n)Voltage after, will test node Ns(m,n)Voltage reach driving circuit 29.Accordingly, sequence controller 20 is just able to grasp pixel transistor Tp1(m,n)State.
Fig. 6 is the display device schematic diagram of detection the enable circuit and mode selection circuit of the embodiment of the present invention.Such as Fig. 6 institute Show, display device 50 includes drive module 51, sequence controller 53, display panel 57 and grid control circuit 55.Display surface Plate 57 includes multiple pixel units for being arranged as array (as shown in dashed rectangle).For convenience, it is assumed that these are by pixel electricity Road P(1,1)~P(M,N)With detection enable circuit SC(1,1)~SC(M,N)The pixel unit of composition is arranged as M row and N is arranged.
Fig. 6 assumes that drive module 51 includes M driving circuit SD1...SDM;And grid control module 55 includes N number of grid Pole control circuit GC1...GCN.Sequence controller 53 controls driving circuit SD using source control signal Ssc1~SDM, Yi Jili Grid control circuit GC is controlled with grid control signal Sgc1~GCN.When practical application, solution multiplexing is separately can be used in drive module 51 Circuit/duplex circuit, for reducing the number of required driving circuit.It is the change of this case about the difference in such application Change, is not explained in detail herein.
As shown in fig. 6, identical positioned at being electrically connected to the pixel circuit of a line by same data signal line data Driving circuit SD.For example, being similarly positioned in the pixel circuit P of the 1st row(1,1)…P(1,N)Pass through data signal line data1And it is electrically connected It is connected to driving circuit SD1.In addition, passing through same state detection signal line DET positioned at the detection enable circuit SC with a line It is electrically connected to identical driving circuit SD.For example, being similarly positioned in the detection enable circuit SC of the 1st row(1,1)…SC(1,N)Pass through shape State signal lines DET1And it is electrically connected to driving circuit SD1
On the other hand, it is electrically connected to together positioned at M pixel circuit P of same row by same scan signal line SCAN One grid control circuit GC.The M detection enable circuit SC positioned at same row (the n-th column) will pass through same scanning signal SCANnThe same grid control circuit GC is electrically connected to same detection pattern enable signal wire EN.
Therefore, it is similarly positioned in the pixel circuit P of first row(1,1)…P(M,1)Pass through scan signal line SCAN1And it is electrically connected to Grid control circuit GC1;It is similarly positioned in the detection enable circuit SC of first row(1,1)…SC(M,1)Pass through scan signal line simultaneously SCAN1With detection pattern enable signal wire ENnAnd it is electrically connected to grid control circuit GC1
As previously mentioned, grid control circuit GC1…GCNScanning circuit is also provided, and scanning circuit can generate and each column in turn Scan signal line SCAN corresponding to pixel unit1~SCANN.Pass through the scan signal line SCAN of these generations interlaced with each other1~ SCANN, sequence controller 53 can the pixel circuit respectively to each column detect.Wherein, unselected for showing or examining The pixel circuit P of survey(m,n), scanning signal SCANn is low level L.When scanning signal SCANn is low level L, it is similarly in Pixel circuit P under display pattern and detection pattern(m,n)With detection enable circuit SC(m,n)The variation of interior element and signal It is slightly different.
Fig. 7 is referred to, is the signal waveforms of display device shown in fig. 6.Fig. 7 is from top to bottom respectively the data of M row Signal data1、data2...dataM, N column scanning signal SCAN1、SCAN2…SCANN, bias Vbs, input signal IN1, The detection pattern enable signal EN that IN2, the N that enable circuit is detected for enable are arranged1~ENN, and represent light emitting diode (LED) the state detection signal DET of the N of state or thin film transistor (TFT) (TFT) state column1、DET2…DETN.Wherein, data-signal data1、data2...dataMWith state detection signal DET1、DET2…DETNFor analog voltage.Furthermore reality according to the present invention Apply example, the received bias Vbs of grid control circuit institute, input signal IN1, IN2 are digital signal, and its voltage do not need with Each column change.Therefore, when being conceived using the present invention, sequence controller 53 is to grid control circuit GC1…GCNControlling party Formula is relatively easy.
Tdet_r during Tdet_all can further comprise N number of column detection during detection1、Tdet_r2…Tdet_rN, this N During corresponding respectively to detect the pixel circuit that N is arranged during a column detection.The Tdet_r during arranging detection1, grid Control circuit GC1Export the scanning signal SCAN of high levels1To the detection enable circuit SC for being similarly positioned in first row(1,1)~ SC(M,1);The Tdet_r during arranging detection2, grid control circuit GC2Export the scanning signal SEL of high levels2To being similarly positioned in The detection enable circuit SC of one column(1,2)~SC(M,2), the rest may be inferred by analogy.
Tdet_r during column detection1Corresponding to CRL1 at circle choosing, during this section, data-signal data1~dataMTo draw Face data voltage Vdis, scanning signal SCAN1For high levels, the pixel circuit P of first row is represented(1,1)、P(2,1)…P(M,1)It is selected It takes.At this point, all detection enable circuit SC positioned at first row(1,1)~SC(M,1), from grid control circuit GC1Received Detection pattern enable signal EN1It is high levels.Therefore, the state detection signal DET it can be seen from CRL1 at circle choosing1、 DET2…DETNThe Tdet_r during arranging detection1Level respectively represent same position in first row but the pixel circuit do not gone together P(1,1)、P(2,1)…P(M,1)State.
Similarly, Tdet_r during column detection2、Tdet_rNCorrespond respectively to CRL2, CRLN at circle choosing.It can by circle choosing CRL2 To find out, state detection signal DET1、DET2,~DETNThe Tdet_r during arranging detection2Level respectively represent pixel circuit P(1,2)、P(2,2)、…P(M,2)State;The state detection signal DET it can be seen from CRLN at circle choosing1、DET2,~DETNIt is arranging Tdet_r during detectionNLevel respectively represent the same position of table in Nth column but the pixel circuit P that does not go together(1,N)、P(2,N)、… P(M,N)State.
As shown in fig. 7, during same detection, for the pixel circuit P for being located at same row(1,1)、P(2,1)…P(M,1) Detect result (the state detection signal DET obtained1、DET2…DETNVoltage) it is not fully identical.In addition, state-detection is believed Number DET1、DET2…DETNDuring different detections, result (the state detection signal DET obtained is detected1、DET2…DETN Voltage) it is not fully identical.This is because each pixel circuit P on display panel 57(1,1)…P(M,N)Light emitting diode The state of LED and/or thin film transistor (TFT) TFT are all not exactly the same caused.
It must be noted that, Fig. 7 is applicable to the first detection pattern and the second detection pattern.Either any detection mould Formula, scanning signal SCAN1、SCAN2、…SCANN, bias Vbs, input signal IN1, IN2, detection pattern enable signal EN1~ENN Voltage control it is all identical, difference be only that test data voltage Vdata_tst voltage level represent be LED data voltage Vdata_led or TFT data voltage Vdata_tft.
If the first detection pattern, state detection signal DET1、DET2,~DETNFor detecting LED state, then data are believed Number data1、data2...dataMVoltage be LED data voltage Vdata_led.On the other hand, if the second detection pattern, shape State detects signal DET1、DET2,~DETNFor detecting TFT state, then data-signal data1、data2...dataMVoltage be TFT data voltage Vdata_tft.
Conception according to the present invention can provide detection pattern, for detecting when display device has just been switched on or will shut down The state of each pixel circuit.Thereafter, sequence controller can in display mode, in response to those testing results to pixel electricity Compensation rate needed for road generates corresponding data-signal data.
For example, when testing result shows Light-emitting diode LED(m,n)When needing additional compensation 0.5V shinny, timing control Device processed is by data-signal datamAfter the compensation rate for adding 0.5V by original data-signal (such as 3V), pixel circuit is sent to P(m,n).Assuming that Light-emitting diode LED(m,n)Originally when the data voltage of brightness to display is 3V, sequence controller must be changed to Transmit the data-signal of 3V+0.5V.On how to carry out the application mode of subsequent compensation using testing result, do not need to limit It is fixed, it is also not described in detail herein.
Fig. 8 is the detection enable circuit of the embodiment of the present invention and detection circuit is in the flow chart that compensation detects program.Such as Shown in Fig. 8, setting linage-counter m first and column counter n (m=n=1) (step S311).Then, for the pixel of the n-th column Circuit P(1,n)~P(M,n)Detected (step S312).Step S312 further comprises step S313, S315, S316, S317. Wherein, step S313 is for pixel circuit P(m,n)It is detected, step S315, S316, S317 are then used to adjust linage-counter m With column counter n.When practical application, it is also possible to which by the way of parallel processing, drive module 51 passes through driving circuit simultaneously SD1...SDMThe synchronous state detection signal DET for reading M row1~DETM.Signal is detected using parallel processing reading state DET1~DETMWhen, it can the more efficient state for obtaining pixel circuit.
Step S313 further comprises the steps.Firstly, mode selection circuit MSCnReceive low level bias Vbs with The IN2 (Vbs=IN1=L, IN2=H) of input signal IN1, high levels.Accordingly, second mode selection path will generate high levels Detection pattern enable signal ENn(ENn=H), and then enable detects enable circuit SCn(step S313a).
Then, driving circuit SDmVia detection enable circuit SC(m,n)Detect Light-emitting diode LED(m,n)State (step ) and/or detection pixel transistor Tp1 S313b(m,n)State (step S313c).If selection individually detects light emitting diode LED(m,n)When state, step S313b is only executed.Step S313b corresponds to the situation of Fig. 4 A, 4B, and step S313c corresponds to figure The situation of 5A, 5B.
When practical application, Light-emitting diode LED can be detected in the similar and different stage in display device operating process(m,n) With pixel transistor Tp1(m,n)State.Light emitting diode is detected respectively with before shutdown after powering for example, can choose LED(m,n)With pixel transistor Tp1(m,n)State.If selecting independent detection pixel transistor Tp1(m,n)When state, step is only executed Rapid S313c.Alternatively, if desired detecting Light-emitting diode LED simultaneously(m,n)State and pixel transistor Tp1(m,n)When state, then may be used Step S313b and step S313c is executed in turn.The practices such as such execution opportunity about detection pattern and sequence do not need to limit It is fixed.
After step S313, judge whether linage-counter m is equal to M (step S315).If the judging result of step S315 For negative, just add up linage-counter m (step S317), and executes step S313 again.Conversely, if the judging result of step S315 Certainly, column counter m to be reset to 1 (step S316), and judge whether column counter n is equal to N (step S318).
If the judging result of step S318 is negative, just add up column counter n (step S319), and executes step again S313.Conversely, representing pixel circuit whole on display panel if the judging result of step S318 is affirmative and all detecting It finishes, therefore process terminates.
Conception according to the present invention, pixel transistor, selection transistor Ts1n、Ts2n、Ts3n、Ts4nIt can be film crystal It manages (Thin-Film Transistor, referred to as TFT), and the type of the Light-emitting diode LED in pixel circuit does not need It is particularly limited to.In addition to OLED above-mentioned, the Light-emitting diode LED in pixel circuit is also possible to polymer LED (Polymer Light Emitting Diode, referred to as PLED) or micro-led (micro LED) etc..This Outside, though aforementioned citing is by taking the pixel transistor of N-type, selection transistor as an example, idea of the invention is also applicable to p-type Pixel transistor, selection transistor.
Previous embodiment illustrates that the present invention how for pixel circuit setting detection enable circuit and mode selection circuit, makees It is used for the LED state in detection pixel circuit with TFT state.Wherein, the received bias Vbs of mode selection circuit institute, input Signal IN1, IN2 are digital signal.Therefore, when being conceived using the present invention, control of the sequence controller to grid control circuit Mode processed is relatively easy.
Although the present invention is disclosed above with embodiment, so it is not intended to limit the present invention, any technical field In those of ordinary skill can make several modifications and improvements without departing from the spirit and scope of the present invention, therefore it is of the invention Protection scope should be defined by the scope of the appended claims.

Claims (13)

1. a kind of display device, comprising:
One display panel, comprising:
M pixel circuit;And
M detection enable circuit, wherein respectively the M pixel circuit is electrically connected in respectively this M detection enable circuit, and M For positive integer;
One drive module is electrically connected by M data signal wire in the M pixel circuit, and passes through M bar state Signal lines and be electrically connected in this M detection enable circuit;
One grid control circuit is electrically connected at the M pixel circuit by scan signal line, and is believed by the scanning Number line and a detection pattern enable signal wire and be electrically connected at this M detection enable circuit, the wherein grid control circuit packet It includes:
One scanning circuit provides scan signal for the scan signal line;And
One mode selection circuit, for receiving the scanning signal, a bias, one first input signal and one second input signal, Wherein first input signal and second input signal are inverting each other, and the mode selection circuit includes:
One first mode selects path, for being inputted according to the bias and one first when the display device is a display pattern Signal and this M detection enable circuit of forbidden energy;And
One second mode select path, for the display device be a detection pattern when, according to the scanning signal and this second Input signal and this M detection enable circuit of enable.
2. display device as described in claim 1, which is characterized in that respectively the M pixel circuit includes one first pixel transistor Pipe, one second pixel transistor and a light emitting diode, wherein first pixel transistor and the light emitting diode are electrical It is connected to the one with this M detection enable circuit corresponding to the pixel circuit, and second pixel transistor is electrically connected In the one for the M data signal wire being electrically connected with the pixel circuit.
3. display device as claimed in claim 2, which is characterized in that
When the display device is the display pattern, the voltage of the M data signal wire is a picture data voltage;And
When the display device is the detection pattern, the voltage of the M data signal wire be a light emitting diode data voltage or For the one of a thin film transistor (TFT) data voltage, wherein the picture data voltage is higher than the light emitting diode data voltage, and should Light emitting diode data voltage is higher than the thin film transistor (TFT) data voltage.
4. display device as claimed in claim 3, which is characterized in that
The picture data voltage is enough that the light emitting diode and first pixel transistor is connected;
The light emitting diode data voltage is enough that the light emitting diode is connected but is not enough to be connected first pixel transistor;And
Thin film transistor (TFT) data voltage is not enough to be connected the light emitting diode but is enough that first pixel transistor is connected.
5. display device as described in claim 1, which is characterized in that this M detection enable circuit is used to examine in the M bar state It surveys signal wire and generates M state detection signal respectively, wherein
It is caused when the mode selection circuit generates and transmits the detection pattern enable signal with one first level to this M detection When energy circuit, this M detection enable circuit is disabled and stops generating the M state detection signal;And
It is caused when the mode selection circuit generates and transmits the detection pattern enable signal with one second level to this M detection When energy circuit, this M detection enable circuit is enabled and generates the M state detection signal.
6. display device as described in claim 1, which is characterized in that first mode selection path includes:
One first choice transistor is electrically connected at this M detection enable circuit, the bias and second mode selection path, For receiving first input signal;And
One second selection transistor, is electrically connected at the bias and the second mode selects path, for receiving first input Signal,
Wherein the first choice transistor is selective according to the level of first input signal passes through the detection mould for the bias Formula enable signal wire and be sent to this M detection enable circuit.
7. display device as claimed in claim 6, which is characterized in that be somebody's turn to do by what the detection pattern enable signal wire transmitted Bias is used for this M detection enable circuit of forbidden energy.
8. display device as claimed in claim 6, which is characterized in that
When the display device is the display pattern, which is connected with second selection transistor;And
When the display device is the detection pattern, the first choice transistor and second selection transistor are closed.
9. display device as claimed in claim 6, which is characterized in that second mode selection path includes:
One third selection transistor is electrically connected at second selection transistor, for receiving second input signal;And
One the 4th selection transistor, be electrically connected at this M detection enable circuit, the scanning circuit, the first choice transistor, Second selection transistor third selection transistor and the detection circuit,
Wherein the 4th selection transistor is used for the level according to second input signal, and selectivity is by the scanning signal by being somebody's turn to do Detection pattern enable signal wire and be sent to this M detection enable circuit.
10. display device as claimed in claim 9, which is characterized in that transmitted by the detection pattern enable signal wire The scanning signal is used for this M detection enable circuit of enable.
11. display device as claimed in claim 9, which is characterized in that
When the display device is the display pattern, the third selection transistor and the 4th selection transistor are to close;And
When the display device is the detection pattern, the third selection transistor and the 4th selection transistor are conducting.
12. display device as claimed in claim 9, which is characterized in that the second mode selects path further include:
One electric capacity of voltage regulation is electrically connected at the detection circuit, the first choice transistor, the third selection transistor and the 4th Selection transistor.
13. display device as claimed in claim 9, which is characterized in that the first choice transistor, the second selection crystal Pipe, the third selection transistor and the 4th selection transistor are NMOS transistor.
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