CN110264881A - Display device and production method - Google Patents
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- CN110264881A CN110264881A CN201910537818.XA CN201910537818A CN110264881A CN 110264881 A CN110264881 A CN 110264881A CN 201910537818 A CN201910537818 A CN 201910537818A CN 110264881 A CN110264881 A CN 110264881A
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- 239000004038 photonic crystal Substances 0.000 claims abstract description 169
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 239000003086 colorant Substances 0.000 claims description 4
- 239000004408 titanium dioxide Substances 0.000 claims description 4
- 238000005401 electroluminescence Methods 0.000 claims description 3
- 230000017260 vegetative to reproductive phase transition of meristem Effects 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
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- 230000008569 process Effects 0.000 claims description 2
- 239000000470 constituent Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 230000005284 excitation Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
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- 239000000377 silicon dioxide Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 208000033748 Device issues Diseases 0.000 description 1
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- 238000010521 absorption reaction Methods 0.000 description 1
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
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Abstract
The invention discloses display device and production methods.The display device includes: backlight, and backlight is electroluminescent device；The side of backlight is arranged in layer of photonic crystals, layer of photonic crystals, and layer of photonic crystals includes multiple photonic crystal elements；Quantum dot layer, side of the layer of photonic crystals far from backlight is arranged in quantum dot layer, quantum dot layer includes multiple quantum dot elements, quantum dot element is arranged in a one-to-one correspondence with photonic crystal elements, photonic crystal elements are configured as the luminous intensity distribution situation that can enable quantum dot element at different light-emitting angles, match from luminous intensity distribution situation of the electroluminescent device at different light-emitting angles.The inclined problem of view can be effectively relieved as a result, so that inclined display is ignored in display device realization.
Description
Technical field
The present invention relates to field of display technology, and in particular, to display device and production method.
Background technique
Quanta point material refers to partial size in the semiconductor grain of 1-100nm.Quanta point material under the excitation of external light source,
Transition occurs for electronics, emits fluorescence, since the half-wave width of quanta point material is relatively narrow, thus the monochromatic light of capable of emitting higher degree.
There is higher luminous efficiency compared to traditional display device based on the display device of quanta point material.However, invention human hair
Now currently based on the display device of quanta point material, there is also have to regard inclined problem at different light-emitting angles.
Therefore, still have much room for improvement currently based on the display device of quanta point material and production method.
Summary of the invention
The present invention is directed to alleviate or solve the problems, such as at least one in above-mentioned refer at least to some extent.
In one aspect of the invention, the invention proposes a kind of display devices.The display device includes: backlight, institute
Stating backlight is electroluminescent device；The side of the backlight, the light is arranged in layer of photonic crystals, the layer of photonic crystals
Sub- crystal layer includes multiple photonic crystal elements；Quantum dot layer, the quantum dot layer are arranged in the layer of photonic crystals far from institute
The side of backlight is stated, the quantum dot layer includes multiple quantum dot elements, the quantum dot element and the photonic crystal list
Member is arranged in a one-to-one correspondence, and the photonic crystal elements are configured as that hair of the quantum dot element at different light-emitting angles can be enabled
Light intensity distributions situation matches from luminous intensity distribution situation of the electroluminescent device at different light-emitting angles.By
This, can use luminous intensity of the photonic crystal elements quantum dot element at different light-emitting angles, and enable quantum dot list
Luminous intensity distribution situation luminous intensity from electroluminescent device different light-emitting angles at of the member at different light-emitting angles
Distribution situation matches, so as to which the inclined problem of view is effectively relieved.
According to an embodiment of the invention, the photonic crystal elements be configured as can be improved the quantum dot element it is small go out
Luminous intensity under angular.Be conducive to the luminous intensity distribution situation for making quantum dot element and electroluminescent device as a result,
Luminous intensity distribution matches, and regards inclined problem to alleviate, improves the display quality of display device.
According to an embodiment of the invention, the photonic crystal elements include the protrusion of multiple array arrangements.Thus, it is possible to sharp
The adjusting to luminous intensity at quantum dot element difference light-emitting angle is realized with the protrusion of photonic crystal elements.
According to an embodiment of the invention, the refractive index for constituting the material of the photonic crystal elements is greater than 1.6；Optional,
The layer of photonic crystals includes at least one of 1-D photon crystal, 2 D photon crystal and three-D photon crystal；Optional,
The material for constituting the photonic crystal elements includes at least one of polysilicon and titanium dioxide.Above-mentioned refraction is utilized as a result,
The higher material of rate constitutes photonic crystal elements, can reduce the height of photonic crystal elements protrusions, reduces difficulty of processing.
According to an embodiment of the invention, the electroluminescent device includes multiple sub- electroluminescent devices, the quantum dot
Unit is arranged in a one-to-one correspondence with the sub- electroluminescent device；Optional, the electroluminescent device includes organic light-emitting diodes
At least one of pipe, inorganic light-emitting diode and light emitting diode with quantum dots.Sub- electroluminescent device can be realized to amount as a result,
The independent control of sub- dot element, and sub- electroluminescent device can show display device by adjusting the size realization of input current
The control of grayscale can save the structures such as liquid crystal layer and the polaroid in current display device, show matter improving display device
In the case where amount, it is further simplified the structure of display device, reduces the cost of display device.
According to an embodiment of the invention, the display device further comprises at least one of flowering structure: half transflection of backlight
Side of the quantum dot layer far from the layer of photonic crystals, half transflection of backlight is arranged in layer, the half transflection layer of backlight
Layer covers the quantum dot element；Color film layer, the coloured silk film layer are arranged in the half transflection layer of backlight far from the quantum dot layer
Side, the coloured silk film layer includes multiple colors not whole identical color blocking blocks；First substrate, the first substrate are arranged in institute
It states between backlight and the layer of photonic crystals.Half transflection layer of backlight can continue what reflection was not absorbed by quantum dot element as a result,
Backlight realizes that backlight excites the circulation of quantum dot element, improves the utilization rate of backlight.
According to an embodiment of the invention, the backlight is blue light electroluminescent device, the coloured silk film layer includes red color
Stop block, green color blocking block and blue color blocking block, the quantum dot layer and the layer of photonic crystals are on the first substrate
Orthographic projection and the blue color blocking block orthographic projection on the first substrate between non-overlapping region, wherein the blue
Color blocking block extends to the first substrate side and is in contact with the first substrate, alternatively, the blue color blocking block and described
Transparent medium is filled between first substrate.Blue light is short-wavelength light, and short-wavelength light level spacing is big, is absorbed through quantum dot element
Afterwards, can the small long wavelength light in emission level interval, capable of emitting feux rouges after being stimulated such as red quantum dot element, green quantum dot list
Member capable of emitting green light after being stimulated realizes the display of display device, and sets blue light electroluminescent device for backlight, can save
The setting of blue quantum dot element is gone, material is saved, saves cost.
According to an embodiment of the invention, the backlight is ultraviolet light photo electroluminescence device, the quantum dot layer includes red
The sub- dot element of colo(u)r specification, green quantum dot element and blue quantum dot element, the coloured silk film layer include red color resistance block, green color
Stop block and blue color blocking block, and the quantum dot element in the color blocking block and the quantum dot layer in the color film layer corresponds
Setting.Ultraviolet light is short-wavelength light, by the excitation of ultraviolet light, the capable of emitting feux rouges of red quantum dot element, green quantum dot element
Capable of emitting green light, the blue capable of emitting blue light of quantum dot element, realizes the display of display device.
In another aspect of this invention, the invention proposes a kind of methods for making display device.Reality according to the present invention
Example is applied, this method comprises: production backlight, the backlight is electroluminescent device；In the side of the backlight, light is set
Sub- crystal layer, the layer of photonic crystals include multiple photonic crystal elements；In the layer of photonic crystals far from the backlight
Quantum dot layer is arranged in side, and the quantum dot layer includes multiple quantum dot elements, the quantum dot element and the photonic crystal
Unit is arranged in a one-to-one correspondence, and the photonic crystal elements are configured as to enable the quantum dot element at different light-emitting angles
Luminous intensity distribution situation matches from luminous intensity distribution situation of the electroluminescent device at different light-emitting angles.
It can be obtained the display device ignored and shown partially using simple method as a result,.
According to an embodiment of the invention, it includes: to be used in the side of backlight deposition that the layer of photonic crystals, which is arranged,
The material of the layer of photonic crystals is formed, photonic crystal material layer is formed；Based on the photonic crystal material layer, composition work is utilized
Skill enables the photonic crystal material layer form the protrusion of array arrangement far from the side of the backlight, and is formed multiple described
Photonic crystal elements, to obtain the layer of photonic crystals.It can be obtained layer of photonic crystals using simple method as a result,.
Detailed description of the invention
Above-mentioned and/or additional aspect of the invention and advantage will become from the description of the embodiment in conjunction with the following figures
Obviously and it is readily appreciated that, in which:
Fig. 1 shows the structural schematic diagram of display device according to an embodiment of the invention；
Fig. 2 shows the structural schematic diagram of display device in the prior art；
Fig. 3 shows luminous intensity distribution plot of the quantum dot at different light-emitting angles；
Fig. 4 shows luminous intensity distribution plot of the electroluminescent device at different light-emitting angles；
Fig. 5 shows the structural schematic diagram of photonic crystal elements according to an embodiment of the invention；
Fig. 6 shows that quantum dot element according to an embodiment of the invention goes out after photonic crystal elements are adjusted in difference
Luminous intensity distribution plot at angular；
Fig. 7 shows the structural schematic diagram of display device according to an embodiment of the invention；
Fig. 8 shows the structural schematic diagram of display device in accordance with another embodiment of the present invention；
Fig. 9 shows the structural schematic diagram of display device in accordance with another embodiment of the present invention；
Figure 10 shows the flow diagram of production display device method according to an embodiment of the invention.
Description of symbols:
100: backlight；110: sub- electroluminescent device；200: layer of photonic crystals；210: photonic crystal elements；211: convex
It rises；300: quantum dot layer；310: quantum dot element；311: red quantum dot element；312: green quantum dot element；313: blue
Quantum dot element；400: color film layer；410: red color resistance block；420: green color blocking block；430: blue color blocking block；500: backlight half
Transflection layer；510: half transflection unit of backlight；600: first substrate；700: the second substrate；10: the first polaroids；20: liquid crystal layer；
30: the second polaroids；40: transparent medium.
Specific embodiment
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached
The embodiment of figure description is exemplary, and for explaining only the invention, and is not considered as limiting the invention.
In one aspect of the invention, the invention proposes a kind of display devices.According to an embodiment of the invention, with reference to figure
1, which includes: backlight 100, layer of photonic crystals 200 and quantum dot layer 300, wherein backlight 100 can be
The side of backlight 100 is arranged in electroluminescent device, layer of photonic crystals 200, and layer of photonic crystals 200 includes multiple photonic crystals
Side of the layer of photonic crystals 200 far from backlight 100 is arranged in unit 210, quantum dot layer 300, and quantum dot layer 300 includes multiple
Quantum dot element 310, quantum dot element 310 are arranged in a one-to-one correspondence with photonic crystal elements 210, and 210 quilt of photonic crystal elements
It is configured to the luminous intensity distribution situation that can enable quantum dot element 310 at different light-emitting angles, with electroluminescent device not
Match with the luminous intensity distribution situation at light-emitting angle.Thus, it is possible to utilize photonic crystal elements quantum dot element
Luminous intensity at different light-emitting angles, and enable luminous intensity distribution situation of the quantum dot element at different light-emitting angles with
Luminous intensity distribution situation of the electroluminescent device at different light-emitting angles matches, so as to which the inclined problem of view is effectively relieved,
So that inclined display is ignored in display device realization.
In order to make it easy to understand, display device according to an embodiment of the present invention is briefly described first below:
Currently based on the structure of the display device of quanta point material as shown in Fig. 2, the display device includes stacking gradually to set
Backlight 100, the first polaroid 10, liquid crystal layer 20, the second polaroid 30, quantum dot layer 300 and the color film layer 400 set,
In, backlight 100 can be electroluminescent device (such as inorganic light-emitting diode (LED)), and the light that backlight 100 issues can excite
Quantum dot in quantum dot layer 300 generates light identical with quantum dot colors, and above-mentioned light is by corresponding color blocking in color film layer 400
, it can be achieved that the display of display device after block.
However inventors have found that luminous intensity distribution situation of the quantum dot at different light-emitting angles, with electroluminescent cell
Luminous intensity distribution situation of the part at different light-emitting angles is inconsistent, specifically, Fig. 3 is that quantum dot goes out in difference with reference to Fig. 3
Luminous intensity distribution plot at angular, quantum dot have lower shine in small light-emitting angle (such as -10 ° to 10 °) range
Intensity, and the luminous intensity with higher within the scope of big light-emitting angle.With reference to Fig. 4, Fig. 4 is that electroluminescent device goes out in difference
Luminous intensity distribution plot at angular, electroluminescent device have higher in small light-emitting angle (such as -10 ° to 10 °) range
Luminous intensity, and within the scope of big light-emitting angle have lower luminous intensity.That is hair of the quantum dot at small light-emitting angle
The luminous intensity distribution of light intensity distributions and electroluminescent device at small light-emitting angle is inconsistent, and quantum dot is in big beam angle
The luminous intensity distribution of luminous intensity distribution and electroluminescent device at big light-emitting angle at degree is also inconsistent, causes view inclined
Appearance, influence the display effect of display device.It should be noted that the luminous intensity at different light-emitting angles of quantum dot
Distribution situation refers to that the light that quantum dot issues penetrates the luminous intensity distribution situation after color film layer.
It should be noted that Fig. 3 and luminous intensity illustrated in fig. 4 are the relative intensities after normalizing, the phase in Fig. 3
Strength values are not represented with the absolute intensity numerical value of quantum dot light emitting intensity, the relative intensity value in Fig. 4 does not also represent
The absolute intensity numerical value of electroluminescent device luminous intensity is only used for embodying quantum dot and electroluminescent device in different beam angles
The trend of luminous intensity variations at degree.
According to an embodiment of the invention, quantum dot element can be enabled to exist by the way that layer of photonic crystals is arranged in a display device
The distribution situation of luminous intensity at different light-emitting angles, from luminous intensity of the electroluminescent device at different light-emitting angles
Distribution situation matches, and the inclined problem of view is effectively relieved, improves the display quality of display device.
Below according to specific embodiments of the present invention, each structure of the display device is described in detail:
According to an embodiment of the invention, each quantum dot element in the light excitation quantum dot layer 300 that backlight 100 issues
After 310, quantum dot element 310 issues the light with particular color, the light that quantum dot element 310 issues, partially to far from photon
The side of crystal unit 210 is propagated, and is partially propagated to the side close to photonic crystal elements 210.Photonic crystal elements 210 can be right
The light emission direction of light that is that quantum dot element 310 issues and propagating to close 210 side of photonic crystal elements is adjusted, so that
The part light is propagated to the side far from photonic crystal elements 210 again.According to an embodiment of the invention, photonic crystal can pass through
The size for changing the material and photonic crystal that constitute makes the light of photonic crystal elements reflection particular color.Also, difference can be enabled
The reflectivity of photonic crystal is different under light-emitting angle.For example, can be set by material to photonic crystal elements and structure
Meter makes photonic crystal elements 210 carry out high reflection to the light that quantum dot element issues at small light-emitting angle, in big light-emitting angle
Place carries out low reflection to the light that quantum dot element issues.Adjusting Jing Guo photonic crystal elements as a result, can enable quantum dot element exist
The distribution situation of luminous intensity at different light-emitting angles, from luminous intensity of the electroluminescent device at different light-emitting angles
Distribution situation matches.It should be noted that luminous intensity distribution of the quantum dot element at different light-emitting angles refers to quantum
Distribution situation of the light that dot element issues through the luminous intensity after color film layer.
According to an embodiment of the invention, Fig. 6 is that the light that quantum dot element issues is adjusted through photonic crystal elements with reference to Fig. 6
Luminous intensity distribution plot afterwards, after the adjusting of photonic crystal elements 210, quantum dot element 310 is at small light-emitting angle (such as 0 degree)
Luminous intensity with higher, at big light-emitting angle have lower luminous intensity, with electroluminescent device in Fig. 4 it is small go out
Luminous intensity with higher at angular, the distribution situation at big light-emitting angle with lower luminous intensity match.
The luminous intensity distribution and the luminous intensity point of electroluminescent device of quantum dot element after photonic crystal elements are adjusted as a result,
Cloth matches, and the inclined problem of view can be effectively relieved, so that inclined display is ignored in display device realization.It should be noted that quantum in Fig. 6
Luminous intensity of the dot element at the different light-emitting angles after adjusting is also the relative intensity after normalizing, opposite in Fig. 6
Strength values do not represent the absolute intensity numerical value of quantum dot element luminous intensity, are only used for embodiment quantum dot element and go out in difference
The trend of luminous intensity variations at angular.Although and intensity profile of light emission of the quantum dot element after photonic crystal elements are adjusted
It is not fully consistent to 0 degree of curvature and curvature of the electroluminescent device at corresponding light-emitting angle in -50 degree, but quantum dot list
First luminous intensity is identical with electroluminescent device with the variation tendency of light-emitting angle.Thus, it is possible to which it is inclined that view is effectively relieved
Problem.
According to an embodiment of the invention, with reference to Fig. 6 and Fig. 4, as long as quantum dot element is after photonic crystal elements are adjusted
The variation tendency of luminous intensity and the variation tendency of electroluminescent device are consistent.For example, can enable at small light-emitting angle
Luminous intensity increases, or enables the luminous intensity at big light-emitting angle reduce, or the luminous intensity at small light-emitting angle is being enabled to increase
While big, the luminous intensity at big light-emitting angle is enabled to reduce.Specifically, photonic crystal elements 210 are configured as the amount of can be improved
Luminous intensity of the sub- dot element 310 under small light-emitting angle.Be conducive to the luminous intensity distribution situation for making quantum dot element as a result,
Luminous intensity distribution with electroluminescent device matches, and regards inclined problem to alleviate, improves the display quality of display device.
According to an embodiment of the invention, being designed by constituent material to photonic crystal elements 210 and size, certain is enabled
Wave in one frequency range cannot be propagated in photonic crystal elements 210, photonic crystal elements 210 can be made to reflect specific
The light of color, while the constituent material of photonic crystal elements 210 and size cooperate, so that at small light-emitting angle (such as 0 degree)
Place, photonic crystal elements 210 occur wave vector with the light that it is reflected and match, and high reflection are realized, to improve quantum dot element 310 small
Luminous intensity at light-emitting angle, at big light-emitting angle, wave vector mismatch occurs for the light that photonic crystal elements 210 are reflected with it,
Low reflection is realized, so that luminous intensity of the quantum dot element 310 at big light-emitting angle is lower than the strong light at small light-emitting angle
Degree is in other words realized to quantum dot element 310 using photonic crystal elements 210 from 0 degree to the reflectivity of big light-emitting angle
Adjusting, and then quantum dot element is made to realize that positive visual angle goes out light enhancing, to realize that itself and electroluminescent device luminous intensity are distributed
The matching of situation.
According to an embodiment of the invention, to photonic crystal elements 210 constituent material and size be designed when, also need
Consider that photonic crystal elements 210 to the regular transmission of backlight, do not influence the excitation of quantum dot element.
Specific composition material and specific size about photonic crystal elements are not particularly limited, as long as photonic crystal elements
The high reflection at small light-emitting angle, low reflection at big light-emitting angle can be achieved to the light of particular color, while can realize to backlight
Regular transmission, those skilled in the art can be designed as the case may be.For example, implementation according to the present invention
Example, photonic crystal elements 210 can be made of the material of low-refraction, at this point, photonic crystal elements 210 have biggish height.
Other embodiments according to the present invention, photonic crystal elements 210 can be made of the material of high refractive index, at this point, photonic crystal
Unit 210 has lesser height.In other words, the constituent material of photonic crystal elements and size are mutually matched, materials
Adjusting of the photonic crystal elements to quantum dot element luminous intensity is realized with the collective effect of size.
The constituent material of preferred embodiment in accordance with the present invention, photonic crystal elements 210 can be greater than 1.6 for refractive index
Material.Photonic crystal elements are constituted using the higher material of above-mentioned refractive index as a result, can reduce the height of photonic crystal elements
Degree reduces difficulty of processing.Specifically, the constituent material of photonic crystal elements 210 can be for titanium dioxide and polysilicon extremely
It is one of few.
According to an embodiment of the invention, layer of photonic crystals 200 may include 1-D photon crystal, 2 D photon crystal and
At least one of three-D photon crystal.Familiar to those skilled in the art, photonic crystal is with photon band gap characteristic
Artificial periodic dielectric structures.Wherein, 1-D photon crystal may be implemented in one direction to quantum dot element strong light
The adjusting to quantum dot element luminous intensity in two directions, three-dimensional photon may be implemented in the adjusting of degree, 2 D photon crystal
The adjusting to quantum dot element luminous intensity in three directions may be implemented in crystal.According to an embodiment of the invention, corresponding to not
Photonic crystal elements 210 with quantum dot element 310 can be the identical photonic crystal of dimension, can also be the different light of dimension
Sub- crystal.
According to an embodiment of the invention, photonic crystal elements 210 include the protrusion 211 of multiple array arrangements with reference to Fig. 5.
Thus, it is possible to which the easy size by control protrusion, realizes the control to photonic crystal elements size.Utilize photonic crystal list
The protrusion of member realizes the adjusting to luminous intensity at quantum dot element difference light-emitting angle.
According to an embodiment of the invention, the size characteristic of photonic crystal elements 210 includes the width of protrusion 211 (such as Fig. 5 institute
The L shown), length (being not shown in Fig. 5), height (H as shown in Figure 5) and period (d as shown in Figure 5), week
It the distance between the center that phase d is two neighboring raised 211 can be to convex after the constituent material of photonic crystal elements 210 determines
It plays 211 above-mentioned size to be designed, so that photonic crystal elements realize adjusting to quantum dot element luminous intensity.According to this
The embodiment of invention, the width and length of protrusion 211 can be equal, and in other words, the cross section of protrusion 211 is square.
According to an embodiment of the invention, the constituent material and photonic crystal elements 210 in photonic crystal elements 210 reflect
Light wavelength determine after, can according to formula (1) determine protrusion 211 period, protrusion 211 period determine after, can pass through
Simulation software determines width, length and the height of protrusion 211.
Wherein, nneffFor the refractive index of photonic crystal elements constituent material, λ is the wave of the light of photonic crystal elements reflection
It is long, PxFor the period of protrusion.
According to a particular embodiment of the invention, by taking backlight 100 is Blue backlight as an example, quantum dot layer 300 may include
Red quantum dot element and green quantum dot element, the photonic crystal elements 210 being correspondingly arranged with red quantum dot element can be with
It is made of polysilicon, it is highly 144nm that the width and length of 210 protrusions of photonic crystal elements, which are 162nm, and the period is
396nm；The photonic crystal elements 210 being correspondingly arranged with green quantum dot element can also be made of polysilicon, the photonic crystal
The width and length of 210 protrusions of unit are 126nm, are highly 112nm, period 308nm.As a result, with red quantum dot
The photonic crystal elements that unit is correspondingly arranged can realize the reflection to feux rouges, and the luminous intensity of feux rouges is adjusted, and green
The photonic crystal elements that the sub- dot element of colo(u)r specification is correspondingly arranged can realize the reflection to green light, and adjust to the luminous intensity of green light
Section, so that the distribution situation of luminous intensity of the quantum dot element at different light-emitting angles, goes out with electroluminescent device in difference
The distribution situation of luminous intensity at angular matches.
According to an embodiment of the invention, with reference to Fig. 7 and Fig. 8, the display device can also include with flowering structure at least it
One: half transflection layer 500 of backlight, color film layer 400 and first substrate 600, wherein half transflection layer 500 of backlight is arranged in quantum dot
300 side far from layer of photonic crystals 200 of layer, half transflection layer 500 of backlight cover quantum dot element 310, and the color setting of film layer 400 exists
Half side of the transflection layer 500 far from quantum dot layer 300 of backlight, color film layer 400 include the inwhole identical colour cell blocks of multiple colors,
First substrate 600 is arranged between backlight 100 and layer of photonic crystals 200.As a result, on the one hand half transflection layer of backlight can pass through amount
On the other hand the light that sub- dot element issues can reflect the backlight not absorbed by quantum dot element, realize backlight to quantum dot element
Circulation excitation, improve the utilization rate of backlight, color film layer can divide by red color resistance block, green color blocking block and blue color blocking block
Feux rouges, green light, blue light are not filtered out, realizes the display of display device, and first substrate can be used as the support substrate of layer of photonic crystals.
Material about first substrate is not particularly limited, for example, first substrate 600 can be glass substrate.
Material about half transflection layer of backlight is not particularly limited, as long as the light that can be issued by quantum dot element, together
When reflect backlight, those skilled in the art can be designed as the case may be.For example, half transflection layer 500 of backlight can be
Photonic crystal, the photonic crystal can reflect backlight, while through the light of other wavelength in addition to backlight (when backlight blue light-emitting
When, photonic crystal is the photonic crystal for reflecting blue light, and when backlight is blue outer smooth, photonic crystal is the photon for reflecting ultraviolet light
Crystal).Alternatively, half transflection layer 500 of backlight can be structure of composite membrane (such as titanium dioxide collectively formed by high low-index material
The composite membrane constituted with silica).Alternatively, half transflection layer 500 of backlight can be the semi-transparent antistructure of metal (such as chromium, silver gold
Belong to).Alternatively, the semi-transparent antistructure that half transflection layer 500 of backlight can be constituted for cholesteryl liquid crystal.It is semi-transparent using above-mentioned backlight as a result,
Anti- layer can be achieved backlight and excite to the circulation of quantum dot element, improve the utilization rate of backlight.
It will be appreciated to those of skill in the art that being provided with black matrix between two neighboring color blocking block in color film layer 400
(black region in such as Fig. 7 and Fig. 8) blocks non-display structure with realizing.
According to an embodiment of the invention, with reference to Fig. 7 and Fig. 8, which can also include the second substrate 700, second
Side of the color film layer 400 far from half transflection layer 500 of backlight is arranged in substrate 700.The second substrate can be realized to display device as a result,
The protection of internal structure.
Inventors have found that the backlight 100 in display device in the prior art (referring to Fig. 2) is whole face LED light source, one
Aspect cannot achieve the independent control to quantum dot, on the other hand, the size of the electric current of LED light source is input to by adjusting, though
The adjusting to LED light source brightness so may be implemented, however the adjusting is the adjusting to whole face LED light source brightness, so still needing to lead to
The adjusting for crossing the common regulation realization grayscale of liquid crystal layer 20 and the first polaroid 10, the second polaroid 30, leads to display device knot
Structure complicates and the complication of manufacture craft.
According to an embodiment of the invention, with reference to Fig. 7 and Fig. 8, in the present invention, the electroluminescent device for constituting backlight can be with
Including multiple sub- electroluminescent devices 110, quantum dot element 310 is arranged in a one-to-one correspondence with sub- electroluminescent device 110.As a result,
Sub- electroluminescent device can realize the independent control to quantum dot element, and sub- electroluminescent device can be by adjusting input current
Size realize that the adjusting of every sub- electroluminescent device brightness can save to realize the regulation for showing grayscale to display device
The structures such as liquid crystal layer and the polaroid in current display device are gone, in the case where improving display device display quality, into one
The structure for simplifying display device is walked, the cost of display device is reduced.Specifically, electroluminescent device may include organic light emission two
At least one of pole pipe, inorganic light-emitting diode and light emitting diode with quantum dots.
According to an embodiment of the invention, the light that backlight 100 issues can be wavelength in 470nm light below, i.e. backlight
Source 100 be short wavelength light source, the level spacing of short-wavelength light is big, through quantum dot element absorption after, can emission level interval it is small
The light of long wavelength, such as feux rouges, green light.
According to an embodiment of the invention, backlight 100 can be ultraviolet light photo electroluminescence device, with reference to Fig. 7, quantum dot layer
300 include that red quantum dot element 311, green quantum dot element 312 and blue quantum dot element 313, color film layer 400 include
Red color resistance block 410, green color blocking block 420 and blue color blocking block 430, color blocking block and quantum dot element in color film layer 400
It is arranged in a one-to-one correspondence, the ultraviolet light that backlight issues can excite red quantum dot element 311 to glow, and excite green quantum dot list
First 312 green lights, 313 blue light-emitting of excitated blue quantum dot, feux rouges are filtered out through red color resistance block 410, and green light is through green color blocking block
420 filter out, and blue light is filtered out through blue color blocking block 430, to realize the display of display device.In the present embodiment, half transflection of backlight
Layer 500 covers red quantum dot elements 311, green quantum dot element 312 and blue quantum dot element 313, with to not measured
The ultraviolet light that sub- dot element 310 absorbs is reflected.
Other embodiments according to the present invention, backlight 100 can be blue light electroluminescent device, with reference to Fig. 8, quantum
Point layer 300 includes red quantum dot element 311 and green quantum dot element 312, color film layer 400 include red color resistance block 410,
Green color blocking block 420 and blue color blocking block 430, layer of photonic crystals 200 and quantum dot layer 300 on first substrate 600 just
Projection, with blue color blocking block 430 between the orthographic projection on first substrate 600 non-overlapping region, the blue color in color film layer 400
Stop block 430 extends to first substrate 600, and is in contact with first substrate 600.Blue light is short-wavelength light, can excite amount of red
Sub- dot element glows, and excites green quantum dot element green light, and using blue light electroluminescent device as backlight, can save indigo plant
The setting of the sub- dot element of colo(u)r specification, reserves gap between blue color blocking block and first substrate as a result, can fill out blue color blocking block
The gap is filled, is extended on first substrate, the blue light that blue light electroluminescent device issues can be filtered out through blue color blocking block, amount of red
The feux rouges that sub- dot element issues can be filtered out through red color resistance block, and the green light that green quantum dot element issues can be filtered through green color blocking block
Out, the display of display device is realized.In the present embodiment, half transflection layer 500 of backlight covering red quantum dot element 311 and green
The sub- dot element 312 of colo(u)r specification, with to not reflected by the blue light that quantum dot element 310 absorbs.
Alternatively, with reference to Fig. 9, when backlight 100 is blue light electroluminescent device, blue color blocking block 430 and first substrate 600
Between be filled with transparent medium 40.The blue light that backlight issues as a result, can pass through transparent medium and filter out through blue color blocking block.About
The specific material of transparent medium is not particularly limited, as long as blue light can be penetrated, for example, transparent medium can for resin or
Person's silica.
According to an embodiment of the invention, half transflection layer 500 of backlight can be flood structure (as shown in Figure 7), alternatively, backlight
Half transflection layer 500 can also include multiple half transflection units 510 (as in figs. 8 or 9) of backlight, half transflection unit 510 of backlight with
Quantum dot element is arranged in a one-to-one correspondence.
According to an embodiment of the invention, when backlight 100 is blue light electroluminescent device, it is anti-through half transflection layer 500 of backlight
The blue light not absorbed completely by red quantum dot element 311 and green quantum dot element 312 after penetrating, can be by blue color blocking block
430 absorb, so that display device realizes higher colour gamut.
In another aspect of this invention, the invention proposes a kind of methods for making display device.Reality according to the present invention
Example is applied, can be previously described display device by the display device of this method production, be filled as a result, by the display of this method production
It sets and can have feature identical with previously described display device and advantage, details are not described herein.
According to an embodiment of the invention, with reference to Figure 10, this method comprises:
S100: production backlight
In this step, backlight is made.According to an embodiment of the invention, backlight is electroluminescent device.Specifically,
Electroluminescent device may include multiple sub- electroluminescent devices, the photonic crystal elements of subsequent setting, quantum dot element with
Sub- electroluminescent device is arranged in a one-to-one correspondence, and backlight can realize the independent control to quantum dot element as a result, and backlight can
Size by adjusting input current realizes the control to display device grayscale, can save in prior art display device as a result,
The structures such as liquid crystal layer, polaroid, simplify the structure and manufacture craft of display device, reduce cost.
About the emission wavelength and color of backlight, before detailed description has been carried out, details are not described herein.
S200: layer of photonic crystals is set in the side of backlight
In this step, layer of photonic crystals is set in the side of backlight.According to an embodiment of the invention, in backlight
Layer of photonic crystals is arranged in side, layer of photonic crystals specifically is arranged on glass substrate (i.e. first substrate), glass substrate is located at
Between backlight and layer of photonic crystals, layer of photonic crystals includes multiple photonic crystal elements, the quantum dot element of subsequent setting with
Photonic crystal elements are arranged in a one-to-one correspondence, and photonic crystal elements are configured as the luminous intensity of quantum dot element, so that amount
Luminous intensity distribution of the sub- dot element at different light-emitting angles, from strong light of the electroluminescent device at different light-emitting angles
Degree distribution matches, and the inclined problem of view can be effectively relieved as a result, so that inclined display is ignored in display device realization.
Original about the material of photonic crystal elements, size and photonic crystal elements quantum dot element luminous intensity
Reason, before detailed description has been carried out, details are not described herein.
According to an embodiment of the invention, layer of photonic crystals can with through the following steps that formed: firstly, in glass substrate
It is upper to deposit the material for being used to form layer of photonic crystals, photonic crystal material layer is formed, subsequently, based on photonic crystal material layer, benefit
With patterning processes, the protrusion of array arrangement is formed far from the side of glass substrate in photonic crystal material layer, and forms multiple light
Sub- crystal unit, to obtain layer of photonic crystals.It can be obtained layer of photonic crystals using simple method as a result,.
S300: quantum dot layer is set far from the side of backlight in layer of photonic crystals
In this step, quantum dot layer is set far from the side of backlight in layer of photonic crystals.Implementation according to the present invention
Example, quantum dot layer includes multiple quantum dot elements, and quantum dot element is arranged in a one-to-one correspondence with photonic crystal elements.Thus, it is possible to
The adjusting to each quantum dot element luminous intensity is realized using photonic crystal elements.
About the concrete type of quantum dot element, before detailed description has been carried out, details are not described herein.
Production method about quantum dot layer is not particularly limited, and those skilled in the art can be according to the normal of quantum dot layer
It is prepared with production method.
According to an embodiment of the invention, this method can also include: to set in quantum dot layer far from the side of layer of photonic crystals
Half transflection layer of backlight is set, half transflection layer of backlight covers quantum dot element, sets in half transflection layer of backlight far from the side of quantum dot layer
Color film layer is set, and the second substrate is set far from the side of half transflection layer of backlight in color film layer.Half transflection layer of backlight is utilized as a result,
It can realize that backlight excites the circulation of quantum dot element to not reflected by the backlight that quantum dot element absorbs, improve backlight
Utilization rate, color film layer can filter out feux rouges, green light and blue light, and the second substrate can play protection to the structure in display device and make
With.
About half transflection layer of backlight, the positional relationship of color film layer and quantum dot element, before detailed description has been carried out,
Details are not described herein.
In the description of the present invention, the orientation or positional relationship of the instructions such as term " on ", "lower" is based on the figure
Orientation or positional relationship is merely for convenience of the description present invention rather than requires the present invention that must be constructed and be grasped with specific orientation
Make, therefore is not considered as limiting the invention.
In the description of this specification, the description of reference term " one embodiment ", " another embodiment " etc. means to tie
The embodiment particular features, structures, materials, or characteristics described are closed to be included at least one embodiment of the present invention.At this
In specification, the schematic representation of the above terms does not necessarily have to refer to the same embodiment or example.Moreover, the tool of description
Body characteristics, structure, material or feature may be combined in any suitable manner in any one or more of the embodiments or examples.This
Outside, without conflicting with each other, those skilled in the art by different embodiments described in this specification or can show
The feature of example and different embodiments or examples is combined.In addition, it is necessary to illustrate, in this specification, term
" first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance or implicitly indicate meaning
The quantity of the technical characteristic shown.
Although the embodiments of the present invention has been shown and described above, it is to be understood that above-described embodiment is example
Property, it is not considered as limiting the invention, those skilled in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, modifies, replacement and variant.
Claims (10)
1. a kind of display device characterized by comprising
Backlight, the backlight are electroluminescent device；
The side of the backlight is arranged in layer of photonic crystals, the layer of photonic crystals, and the layer of photonic crystals includes multiple light
Sub- crystal unit；
Side of the layer of photonic crystals far from the backlight, the quantum dot is arranged in quantum dot layer, the quantum dot layer
Layer includes multiple quantum dot elements, and the quantum dot element is arranged in a one-to-one correspondence with the photonic crystal elements,
The photonic crystal elements are configured as the luminous intensity that can enable the quantum dot element at different light-emitting angles distribution
Situation matches from luminous intensity distribution situation of the electroluminescent device at different light-emitting angles.
2. display device according to claim 1, which is characterized in that the photonic crystal elements are configured as that institute can be improved
State luminous intensity of the quantum dot element under small light-emitting angle.
3. display device according to claim 2, which is characterized in that the photonic crystal elements include multiple array arrangements
Protrusion.
4. display device according to claim 2, which is characterized in that constitute the refraction of the material of the photonic crystal elements
Rate is greater than 1.6；
It is optional, the layer of photonic crystals include 1-D photon crystal, 2 D photon crystal and three-D photon crystal at least
One of；
Optional, the material for constituting the photonic crystal elements includes at least one of polysilicon and titanium dioxide.
5. display device according to claim 1-4, which is characterized in that the electroluminescent device includes multiple
Sub- electroluminescent device, the quantum dot element are arranged in a one-to-one correspondence with the sub- electroluminescent device；
Optional, the electroluminescent device includes Organic Light Emitting Diode, inorganic light-emitting diode and quantum dot light emitting two
At least one of pole pipe.
6. display device according to claim 5, which is characterized in that further comprise at least one of flowering structure:
Side of the quantum dot layer far from the layer of photonic crystals is arranged in half transflection layer of backlight, the half transflection layer of backlight,
The half transflection layer of backlight covers the quantum dot element；
Half side of the transflection layer far from the quantum dot layer of backlight, the coloured silk film layer is arranged in color film layer, the coloured silk film layer
Including the inwhole identical color blocking blocks of multiple colors；
First substrate, the first substrate are arranged between the backlight and the layer of photonic crystals.
7. display device according to claim 6, which is characterized in that the backlight is blue light electroluminescent device, institute
Stating color film layer includes red color resistance block, green color blocking block and blue color blocking block, the quantum dot layer and the photonic crystal
It is non-overlapping between the orthographic projection of orthographic projection and the blue color blocking block on the first substrate of layer on the first substrate
Region,
Wherein, the blue color blocking block extends to the first substrate side and is in contact with the first substrate, alternatively, described
Transparent medium is filled between blue color blocking block and the first substrate.
8. display device according to claim 6, which is characterized in that the backlight is ultraviolet light photo electroluminescence device,
The quantum dot layer includes red quantum dot element, green quantum dot element and blue quantum dot element, the coloured silk film layer packet
Red color resistance block, green color blocking block and blue color blocking block are included, and in the color blocking block and the quantum dot layer in the color film layer
Quantum dot element be arranged in a one-to-one correspondence.
9. a kind of method for making display device characterized by comprising
Backlight is made, the backlight is electroluminescent device；
Layer of photonic crystals is set in the side of the backlight, the layer of photonic crystals includes multiple photonic crystal elements；
Quantum dot layer is set far from the side of the backlight in the layer of photonic crystals, the quantum dot layer includes multiple quantum
Dot element, the quantum dot element are arranged in a one-to-one correspondence with the photonic crystal elements,
The photonic crystal elements are configured as the luminous intensity that can enable the quantum dot element at different light-emitting angles distribution
Situation matches from luminous intensity distribution situation of the electroluminescent device at different light-emitting angles.
10. according to the method described in claim 9, it is characterized in that, the layer of photonic crystals be arranged including:
In the side of the backlight, deposition is used to form the material of the layer of photonic crystals, forms photonic crystal material layer；
Enable the photonic crystal material layer far from the backlight using patterning processes based on the photonic crystal material layer
Side forms the protrusion of array arrangement, and forms multiple photonic crystal elements, to obtain the layer of photonic crystals.
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| CN201910537818.XA CN110264881B (en) | 2019-06-20 | 2019-06-20 | Display device and manufacturing method |
| PCT/CN2020/082175 WO2020253312A1 (en) | 2019-06-20 | 2020-03-30 | Display apparatus and manufacturing method |
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|---|---|---|---|
| CN201910537818.XA CN110264881B (en) | 2019-06-20 | 2019-06-20 | Display device and manufacturing method |
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| CN110264881B CN110264881B (en) | 2021-09-24 |
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| WO2020253312A1 (en) * | 2019-06-20 | 2020-12-24 | 京东方科技集团股份有限公司 | Display apparatus and manufacturing method |
| WO2022261945A1 (en) * | 2021-06-18 | 2022-12-22 | 京东方科技集团股份有限公司 | Display panel, display apparatus, and manufacturing method for display panel |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114721191B (en) * | 2021-01-06 | 2024-05-14 | 京东方科技集团股份有限公司 | Display panel, manufacturing method thereof, display module and display device |
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| WO2020253312A1 (en) | 2020-12-24 |
| CN110264881B (en) | 2021-09-24 |
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