CN110257803A - A kind of medium temperature quantum-well superlattice thick film thermoelectric material preparation method - Google Patents
A kind of medium temperature quantum-well superlattice thick film thermoelectric material preparation method Download PDFInfo
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- CN110257803A CN110257803A CN201910661739.XA CN201910661739A CN110257803A CN 110257803 A CN110257803 A CN 110257803A CN 201910661739 A CN201910661739 A CN 201910661739A CN 110257803 A CN110257803 A CN 110257803A
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- 239000000463 material Substances 0.000 title claims abstract description 38
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000011261 inert gas Substances 0.000 claims abstract description 26
- 239000002243 precursor Substances 0.000 claims abstract description 19
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 7
- 239000007921 spray Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 15
- 238000000151 deposition Methods 0.000 abstract description 10
- 230000008021 deposition Effects 0.000 abstract description 8
- 239000000126 substance Substances 0.000 abstract description 6
- 238000009833 condensation Methods 0.000 abstract description 2
- 230000005494 condensation Effects 0.000 abstract description 2
- 238000005979 thermal decomposition reaction Methods 0.000 abstract description 2
- 239000007792 gaseous phase Substances 0.000 abstract 1
- 229910002665 PbTe Inorganic materials 0.000 description 7
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 7
- 230000008569 process Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000005619 thermoelectricity Effects 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
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- 230000015572 biosynthetic process Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 210000000746 body region Anatomy 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002918 waste heat Substances 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- 229910002667 PbTe–PbSe Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
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- 230000007123 defense Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
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- -1 inflammable Substances 0.000 description 1
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- 230000003993 interaction Effects 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
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- 238000005272 metallurgy Methods 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 1
- 229910000058 selane Inorganic materials 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- VTLHPSMQDDEFRU-UHFFFAOYSA-N tellane Chemical compound [TeH2] VTLHPSMQDDEFRU-UHFFFAOYSA-N 0.000 description 1
- 229910000059 tellane Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
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Abstract
The invention discloses a kind of medium temperature quantum-well superlattice thick film thermoelectric material preparation methods of field of thermoelectric material technique, this method mainly comprises the steps of: step 1: placing the substrate above on warm table and fixed, start warm table, box heater and air inlet pipe heater are preheated, step 2: inert gas tube is opened, front driver A pipe, precursor B pipe and exhaust pipe, start straight line slide unit simultaneously and drives warm table and the mobile progress atomic layer deposition operation of substrate, this method realizes deposition reaction under normal pressure, get rid of the limitation of vacuum condition, advantageously reduce film preparation cost, realize the high efficiency of film, low cost and mass preparation, avoid inert gas, front driver A and front driver B causes depositing temperature beyond except ALD window, so that presoma condensation or thermal decomposition etc. cause chemical gaseous phase Deposition is so that film is uneven.
Description
Technical field
The invention discloses a kind of medium temperature quantum-well superlattice thick film thermoelectric material preparation methods, specially thermoelectric material skill
Art field.
Background technique
Thermoelectric material is transmission using solid carriers and phonon and interaction to realize that thermal energy and electric energy are mutual
The semiconductor functional material of conversion has many advantages, such as have in thermo-electric generation and refrigerating field important without making an uproar, being light, is green
Application value and prospect.After energy crisis, efficient, free of contamination energy conversion regime is all being sought by developed country, with
Achieve the purpose that rationally and efficiently use the energy such as waste heat, waste heat, underground heat, solar energy and ocean thermal gradients.
Traditional PbTe is mature industrialized commercial thermoelectric material, is mainly used for middle thermophase (400-700
DEG C), the upper limit of operating temperature is determined by the chemical stability of material.PbTe based semiconductor compound, material are with lead, tellurium or selenium
For raw material, it is prepared by certain chemical composition and doping process.Its chemical bond belongs to metal key type, has NaCl type brilliant
Body structure belongs to face-centered cubic lattice, and fusing point is higher (1095K), and forbidden bandwidth is larger (about 0.3eV), be chemical stability compared with
Good macromolecule compound.Synthesis technology is simpler, and can be made N-shaped or p-type material, is widely used in temperature difference cause
It is cold, such as the middle-temperature section of thermoelectric generator and cascade thermoelectric generator.The ZT value of commercialized PbTe, which is only capable of reaching, 0.80 or so,
Corresponding device conversion efficiency of thermoelectric is extremely low, and the transfer efficiency of material is generally 5% or so, seriously limits its application.PbTe
The thermoelectricity capability of material can be improved with the PbSe solid solution alloy formed, this may lattice in alloy there are short distance without
Sequence increases the scattering of shortwave phonon, is remarkably decreased lattice thermal conductivity, so that the figure of merit of its low-temperature space be made to increase.But in height
Warm area, ZT value are not significantly improved, because the forbidden band of material obviously narrows, and leads to a small number of loads after forming PbTe-PbSe alloy
Caused by the effect increase for flowing son.
Traditional powder metallurgic method utilizes traditional ball milling and smelting technology mainly for the preparation of polycrystal powder PbTe material
Finally obtain desired thermoelectric material.The material of metallurgy method synthesis is effectively avoided since polycrystalline structure, mechanical performance are enhanced
Zone melting method obtained material legibility from the shortcomings that, but cause on crucial thermoelectricity capability since density of material is undesirable
Thermoelectric figure of merit (ZT) is lower.Traditional alignment regions melting is grown mainly for the production of PbTe crystal bar material by controlled material
Cooling rate etc. prepare the PbTe monocrystal material of high quality, but energy consumption is high for this method, further raw after being unfavorable for
Processing is produced, the working life for wasting and influencing integral device is caused in device manufacturing processes, leads to higher rejection rate.
The technology for being used to prepare high quality thermoelectricity superlattice film mainly has molecular beam epitaxy (MBE), electrochemistry atom
Layer epitaxy (EC-ALE) and metal organic chemical compound vapor deposition (MOCVD).Prefered method is molecular beam epitaxy (MBE), many
Well known, there is the defects of the device is complicated, expensive and complex technical process in this method, it is this at a slow speed and expensive skill
Only just have can when the quantum-well superlattice thickness of manufacture is in 100 nanometer scale or when product is used for high-grade, precision and advanced national defense industry for art
Row.
Although EC-ALE method is simple, equipment cost is cheap, and it is complicated that there is influence factors, such as deposition potential, electrode,
Substrate material characteristic, solution temperature, the reciprocal effects such as electrolyte concentration are likely to occur second-rate, ingredient so as to cause film
Nonstoichiometry the defects of when pattern is inconsistent.Therefore with EC-ALE method prepared composition complexity or high performance superlattices
Thermoelectric film material is more difficult.
MOCVD method is similar with MBE method, there is complex process equipment, production cost valuableness and complex technical process
The defects of, maximum limitation also resides in raw material, and raw material are metallo-organic compound, and synthesis is difficult, at high cost and big
It is all toxic, explosive, inflammable, toxic gas can be discharged in the preparation process of film such as (H2Te, H2Se), cause environmental pollution.
Using aluminium oxide (AAO) nanopore substrate, monodimension nanometer material is very effective in conjunction with electrochemical deposition method
Synthetic method, existing medium temperature quantum-well superlattice thick film thermoelectric material preparation method carry out film system under vacuum conditions mostly
It is standby, in deposition reaction, substrate is placed in reaction cavity and is remain stationary state, two kinds of presomas are handed over sequentially in time
For being passed into reaction cavity, it is passed through inert gas between two kinds of presomas, cleans the by-product of half-reaction and unreacted
Presoma, this method meeting break vacuum environment in the substrate handoff procedure of different batches open cavity and carry out substrate switching meeting
Cause deposition reaction that cannot be carried out continuously, to greatly increase the time of entire film preparation, furthermore vacuum cavity price is opposite
It is relatively high, it is difficult to realize the film preparation of low cost, high efficiency, mass.
Summary of the invention
The purpose of the present invention is to provide a kind of medium temperature quantum-well superlattice thick film thermoelectric material preparation methods, on solving
State the problem of proposing in background technique.
To achieve the above object, the invention provides the following technical scheme: a kind of medium temperature quantum-well superlattice thick film thermoelectricity material
Preparation method for material, the method includes the steps of:
Step 1: on warm table and fixed, starting warm table, box heater and air inlet pipe heater are placed the substrate above
It is preheated；
Step 2: inert gas tube, front driver A pipe, precursor B pipe and exhaust pipe are opened, while starting straight line slide unit
Drive warm table and the mobile progress atomic layer deposition operation of substrate.
Preferably, the inert gas tube is provided with three groups, and the inert gas tube is distributed in front driver A pipe and forerunner
It is between body B pipe and external.
Preferably, physical space is provided between the inert gas tube, front driver A pipe and precursor B pipe.
Preferably, the outer wall lower part of the inert gas tube, front driver A pipe and precursor B pipe is provided with spray head.
Preferably, the outer wall of the inert gas tube, front driver A pipe and precursor B pipe is provided with heating fin.
Compared with prior art, the beneficial effects of the present invention are:
1) two kinds of presomas are continually fed into the different location of spray head by this method, pass through physics sky between different presomas
Between and inert gas isolation, prevent from intersecting it is touching, substrate is moved back and forth below spray head complete film deposit, before substrate passes through
When driving body A diffusion zone, a half-reaction is completed, then substrate continues to move to inert gas diffusion zone and completes the clear of substrate
It washes, hereafter substrate continues to move to precursor B diffusion zone, completes another half-reaction, and substrate is re-moved to inert gas
Diffusion zone completes the cleaning of substrate, and the limitation of residual substance is cleaned in this method customer service by practice isolation, shortens anti-
The period is answered, reaction rate is improved.Also, the movement velocity by improving substrate can further improve reaction rate, pass through expansion
Opening up multiple reaction modules may be implemented the deposition in large-area substrates, through control substrate between different forerunner's body regions
The number of shuttle can accurately control film thickness, and furthermore this method realizes deposition reaction under normal pressure, get rid of vacuum
The limitation of condition advantageously reduces film preparation cost, realizes high efficiency, low cost and the mass preparation of film；
2) inert gas tube, front driver A are managed in this method and the inner cavity of cabinet is goed deep into one end of precursor B pipe, are led to
It crosses air inlet pipe heater to heat inert gas, front driver A and front driver B, avoids inert gas, front driver A
Depositing temperature is caused to exceed except ALD window with front driver B, so that presoma condensation or thermal decomposition etc. cause chemical vapor deposition
Product is so that film is uneven.
Detailed description of the invention
Fig. 1 is medium temperature quantum-well superlattice thick film thermoelectric material preparation structure schematic elevation view of the present invention；
Fig. 2 is that medium temperature quantum-well superlattice thick film thermoelectric material preparation structure of the present invention faces schematic cross-sectional view；
Fig. 3 is ALD Process window schematic diagram of the present invention.
In figure: 100 cabinets, 200 straight line slide units, 210 warm tables, 220 substrates, 230 box heaters, 300 inert gases
Pipe, 310 precursor A pipes, 320 precursor B pipes, 330 exhaust pipes, 340 spray heads, 350 air inlet pipe heaters, 360 heating fins.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
A kind of medium temperature quantum-well superlattice thick film thermoelectric material preparation method, the method includes the steps of:
Step 1: substrate 220 is placed on warm table 210 and is fixed, warm table 210,230 and of box heater are started
Air inlet pipe heater 350 is preheated, 210 temperature setting of warm table at 90 DEG C, 230 temperature setting of box heater at 90 DEG C,
350 temperature setting of air inlet pipe heater is at 90 DEG C, and warm table 210 and box heater 230 are for keeping substrate 220 to push up bottom temperature
It is consistent, avoid it is uneven in temperature cause substrate 220 deform；
Step 2: inert gas tube 300, front driver A pipe 310, precursor B pipe 320 and exhaust pipe 330 are opened, simultaneously
Start straight line slide unit 200 and drives warm table 210 and the mobile progress atomic layer deposition operation of substrate 220；
Air-channel system: nitrogen, pulse Pb vaporous precursors and pulse is respectively adopted in inert gas, precursor A and precursor B
Property flue 300, front driver A pipe 310, precursor B pipe 320 and exhaust pipe 330 are separately connected gas circuit by Te vaporous precursors
Device, the effect of air-channel system is first is that carrier gas presoma only forms a component to 340 position of spray head, in each 340 position of spray head
Forerunner region was also prevented from adjacent presoma second is that both presoma is isolated with ambient atmosphere for isolation presoma effect, inert gas
Between cross-mixing, continuously exported by presoma and inert gas, number is moved back and forth by substrate 220 come control growth
The thickness of film；
Kinematic system: substrate 220 is driven to move back and forth, 220 movement velocity of substrate is faster, in the stop of forerunner's body region
Between it is shorter, then deposition efficiency is higher, and spray head 340 is fixed in this method, and substrate 220 is placed on clamper, and clamper is fixed on directly
On line slide unit 200, straight line slide unit 200 uses stepper motor, maximum movement speed 2.75m/s, corresponding stepper motor parameter
For 11000 steps/second.
Embodiment 1
| Speed (step/s) | 600 |
| Growth cycle | 150 |
| Film thickness (A) | 218.95 |
| Growth rate (A/cycle) | 1.46 |
| Thickness calibration is poor | 7.83 |
Embodiment 2
| Speed (step/s) | 900 |
| Growth cycle | 150 |
| Film thickness (A) | 221.43 |
| Growth rate (A/cycle) | 1.47 |
| Thickness calibration is poor | 3.94 |
Embodiment 3
| Speed (step/s) | 600 |
| Growth cycle | 150 |
| Film thickness (A) | 216.78 |
| Growth rate (A/cycle) | 1.45 |
| Thickness calibration is poor | 10.48 |
Although hereinbefore having been made with reference to some embodiments, present invention is described, of the invention not departing from
In the case where range, various improvement can be carried out to it and can be with equivalent without replacement component therein.Especially, as long as not
There are structural conflict, the various features in presently disclosed each embodiment can be combined with each other by any way
It uses, the description for not carrying out exhaustion to the case where these combinations in the present specification is only to be in omit length and economize on resources
The considerations of.Therefore, the invention is not limited to specific embodiments disclosed herein, and including falling within the scope of the appended claims
All technical solutions.
Claims (5)
1. a kind of medium temperature quantum-well superlattice thick film thermoelectric material preparation method, it is characterised in that the method includes the steps of:
Step 1: substrate (220) is placed on warm table (210) and is fixed, warm table (210), box heater are started
(230) it is preheated with air inlet pipe heater (350)；
Step 2: opening inert gas tube (300), front driver A pipe (310), precursor B pipe (320) and exhaust pipe (330),
Start straight line slide unit (200) simultaneously and drives warm table (210) and the mobile progress atomic layer deposition operation of substrate (220).
2. a kind of medium temperature quantum-well superlattice thick film thermoelectric material preparation method according to claim 1, it is characterised in that:
The inert gas tube (300) is provided with three groups, and the inert gas tube (300) is distributed in front driver A pipe (310) and forerunner
Body B manages between (320) and external.
3. a kind of medium temperature quantum-well superlattice thick film thermoelectric material preparation method according to claim 1, it is characterised in that:
Physical space is provided between the inert gas tube (300), front driver A pipe (310) and precursor B pipe (320).
4. a kind of medium temperature quantum-well superlattice thick film thermoelectric material preparation method according to claim 1, it is characterised in that:
The outer wall lower part of the inert gas tube (300), front driver A pipe (310) and precursor B pipe (320) is provided with spray head
(340)。
5. a kind of medium temperature quantum-well superlattice thick film thermoelectric material preparation method according to claim 1, it is characterised in that:
The outer wall of the inert gas tube (300), front driver A pipe (310) and precursor B pipe (320) is provided with heating fin
(360)。
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| JP2003324070A (en) * | 2002-04-30 | 2003-11-14 | Suzuki Motor Corp | Method and device of manufacturing thin film |
| EP2767611A1 (en) * | 2013-02-18 | 2014-08-20 | Samsung Display Co., Ltd. | Vapor deposition apparatus, deposition method, and method of manufacturing organic light-emitting display apparatus by using the same |
| CN106947954A (en) * | 2017-04-27 | 2017-07-14 | 京东方科技集团股份有限公司 | A kind of preparation method of vapor deposition apparatus and film |
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2019
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| JP2003324070A (en) * | 2002-04-30 | 2003-11-14 | Suzuki Motor Corp | Method and device of manufacturing thin film |
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Application publication date: 20190920 |