CN110246979A - Display device - Google Patents
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- CN110246979A CN110246979A CN201910178368.XA CN201910178368A CN110246979A CN 110246979 A CN110246979 A CN 110246979A CN 201910178368 A CN201910178368 A CN 201910178368A CN 110246979 A CN110246979 A CN 110246979A
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- dam
- layer
- display device
- voltage line
- island
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8428—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
Abstract
A kind of display device is provided, the display device includes comprising display area, the substrate of peripheral region and pad area, first voltage line and second voltage line and island dam.First voltage line is arranged between the first side of display area and pad area, and second voltage line is arranged at other sides of display area, and island dam is arranged between display area and pad area.First voltage line includes the first principal voltage line and the first connection unit that is prominent from the first principal voltage line and extending towards pad area.Second voltage line includes the second principal voltage line and the second connection unit that is prominent from the end of the second principal voltage line and extending towards pad area.Island dam extends in an essentially parallel manner with the first principal voltage line.
Description
This application claims on March 8th, 2018 the 10-2018-0027701 South Korea patent application submitted and in
March in 2019 the 10-2019-0026475 South Korea patent application submitted on the 7th priority, the South Korea patent application
Disclosure is all incorporated herein by quoting.
Technical field
The exemplary embodiment of the disclosure is related to a kind of display device.
Background technique
Organic light-emitting display device includes organic illuminating element, which includes hole injecting electrode, electronics
The organic emission layer of injecting electrode and formation between them.Organic light-emitting display device is spontaneous emission display device, wherein
It is compound in organic emission layer from hole injecting electrode injected holes and from electron injection electrode injected electrons, so that from this
Compound middle generation exciton and when exciton transits to ground state from excitation state shine.
Organic light-emitting display device does not need the independent light source of such as backlight, can be by low voltage drive, and can have
There is lightweight and thin structure.In addition, organic light-emitting display device has the height of such as wide viewing angle, high contrast and short response time
Quality characteristic.Therefore, the use of organic light-emitting display device is increasing.However, if the outside from display device it is wet
Gas or oxygen penetrate into display device, then the performance of organic light-emitting display device can reduce.
Summary of the invention
The exemplary embodiment of the disclosure, which is related to one kind, can prevent moisture or oxygen to be externally entering changing in display device
Kind display device.
According to an exemplary embodiment of the present disclosure, a kind of display device include substrate, first voltage line, second voltage line and
Island dam.Substrate includes display area, the peripheral peripheral region that display area is arranged in and the pad being arranged in peripheral region
Region.First voltage line is arranged in peripheral region and is located between the first side and pad area of display area.Second voltage
Line is arranged at other sides of display area.Island dam is arranged between display area and pad area.Dam setting in island is than the first electricity
On crimping and the low layer of second voltage line.First voltage line includes the first principal voltage line and the first connection unit.First connection is single
Member is prominent from the first principal voltage line and extends towards pad area.Second voltage line includes that the second principal voltage line and the second connection are single
Member.Second connection unit is prominent from the end of the second principal voltage line and extends towards pad area.Island dam and the first principal voltage line
Extend in an essentially parallel manner.
In the exemplary embodiment, island dam is arranged between the first connection unit and the second connection unit, and the first of island dam
End and the first connection unit are stacked, and the second end opposite with first end and the second connection unit on island dam are stacked.
In the exemplary embodiment, substrate further includes the bending region being arranged between display area and pad area.It stacks
Inorganic insulation layer in substrate includes the groove being formed at position corresponding with bending region.Organic material layer is arranged recessed
In slot.Island dam includes material identical with organic material layer.
In the exemplary embodiment, the display device further include: thin film transistor (TFT) is arranged in display area；Display
Element is electrically connected to thin film transistor (TFT)；Planarization insulating layer is arranged between thin film transistor (TFT) and display element；First dam, if
It sets in peripheral region；And second dam, it is arranged in external zones.First dam and the second dam and planarization insulating layer separate, and
And island dam and at least one of the first dam and the second dam are stacked.
In the exemplary embodiment, island dam is arranged below the first dam and the second dam, and in the first dam and the second dam
The height of at least one increases at the position that at least one of the first dam and the second dam are stacked with island dam.
In the exemplary embodiment, display device further include: thin film transistor (TFT) is arranged in display area；Display element,
It is electrically connected to thin film transistor (TFT)；Encapsulated layer seals display element；And inorganic protective layer, it is arranged between island dam and encapsulated layer.
In the exemplary embodiment, encapsulated layer includes the first successively stacked inorganic encapsulated layer, organic encapsulation layer and
Two inorganic encapsulated layers.First inorganic encapsulated layer directly contacts inorganic protection at the position that the first island inorganic encapsulated Ceng Yu dam is stacked
Layer.
In the exemplary embodiment, display device further include to thin film transistor (TFT) provide data-signal data line, and
Inorganic protective layer covers data line.
In the exemplary embodiment, display device further include: planarization insulating layer, setting is in thin film transistor (TFT) and display member
Between part；And first dam, it is separated with planarization insulating layer and surrounds display area.Inorganic protective layer planarization insulating layer with
The first connection unit and the second connection unit are covered between first dam.
In the exemplary embodiment, display device further include: thin film transistor (TFT) is arranged in display area；Display element,
It is electrically connected to thin film transistor (TFT)；Planarization insulating layer is arranged between thin film transistor (TFT) and display element；First dam, setting exist
In peripheral region；And second dam, it is arranged in peripheral region.First dam and the second dam and planarization insulating layer separate.Island dam
It is arranged between display area and the second dam.
According to an exemplary embodiment of the present disclosure, a kind of display device includes: substrate, including display area；Peripheral region,
It is arranged at the periphery of display area；Pad area is arranged in peripheral region；And bending region, setting display area with
Between pad area.Display device further include: thin film transistor (TFT) is arranged in display area；Display element is electrically connected to film crystalline substance
Body pipe；Data line provides data-signal to thin film transistor (TFT)；Inorganic protective layer covers data line；First voltage line, setting exist
In peripheral region；And second voltage line, it is arranged in peripheral region.First voltage line and second voltage line are mentioned to display element
For driving voltage.Display device further include: island dam is arranged between display area and pad area；Encapsulated layer, sealing display member
Part；Inorganic insulation layer, is arranged in substrate and the groove including being formed at position corresponding with bending region；And organic material
The bed of material, setting is in a groove.Island dam includes material identical with organic material layer, and inorganic protective layer setting is on island dam and envelope
It fills between layer.
In the exemplary embodiment, first voltage line includes be arranged between the first side of display area and pad area
One principal voltage line and the first connection unit that is prominent from the first principal voltage line and extending towards pad area.In addition, the second electricity
Crimping includes the second principal voltage line being arranged at other sides of display area and protrudes simultaneously from the end of the second principal voltage line
And the second connection unit extended towards pad area.Island dam is arranged on the layer lower with second voltage line than first voltage line, and
And extend in an essentially parallel manner with the first principal voltage line.Island dam and the first connection unit and the second connection unit are stacked.
In the exemplary embodiment, island dam is arranged between the first connection unit and the second connection unit, and the first of island dam
End is stacked with the first connection unit, and the second end opposite with first end on island dam and the second connection unit are stacked.
In the exemplary embodiment, inorganic insulation layer covering the first connection unit, the second connection unit and it is exposed to the
Island dam in region between one connection unit and the second connection unit.
In the exemplary embodiment, display device further includes the planarization being arranged between thin film transistor (TFT) and display element
Insulating layer, the first dam being arranged in peripheral region and the second dam being arranged in peripheral region.
In the exemplary embodiment, island dam is arranged between display area and the second dam.
In the exemplary embodiment, island dam and at least one of the first dam and the second dam are stacked.
In the exemplary embodiment, island dam is arranged on the layer lower than the first dam and the second dam.
In the exemplary embodiment, encapsulated layer includes the first successively stacked inorganic encapsulated layer, organic encapsulation layer and
Two inorganic encapsulated layers.First inorganic encapsulated layer directly contacts inorganic protection at the position that the first island inorganic encapsulated Ceng Yu dam is stacked
Layer.
In the exemplary embodiment, the first inorganic encapsulated layer and the second inorganic encapsulated layer the outside of organic encapsulation layer each other
Contact, and the first inorganic encapsulated layer and the second inorganic encapsulated layer extend to the outside on the first dam.
Detailed description of the invention
Describe the exemplary embodiment of the disclosure in detail by referring to accompanying drawing, above and other feature of the disclosure will become
Must be clearer, in the accompanying drawings:
Fig. 1 is the exemplary plan view for schematically showing display device according to the exemplary embodiment of the disclosure；
Fig. 2 is the exemplary section view for schematically showing the section of display device of the interception of the line I-I' shown in Fig. 1
Figure；
Fig. 3 is the plan view for schematically showing the region A of display device shown in Fig. 1；
Fig. 4 is that the exemplary of section for the display device for schematically showing the interception of the line II-II' shown in Fig. 3 is cutd open
View；
Fig. 5 is the plan view for schematically showing the region B of display device shown in Fig. 3；
Fig. 6 is the exemplary section view for schematically showing the section of region B of the interception of the line III-III' shown in Fig. 5
Figure；
Fig. 7 is the exemplary section view for schematically showing the section of region B of the interception of the line IV-IV' shown in Fig. 5
Figure；And
Fig. 8 to Figure 11 is respectively and to schematically show the region B of Fig. 3 according to the exemplary embodiment of the disclosure
Exemplary plan view.
Specific embodiment
Hereinafter, the exemplary embodiment of the disclosure is more fully described with reference to the accompanying drawings.It is same attached through attached drawing
Icon note can refer to same element.
It will be appreciated that used here as term " first ", " second ", " third " etc. by an element and another element region
It separates, and the element should not be limited by these terms.Therefore, " first " element in exemplary embodiment is in another exemplary
It can be described as " second " element in embodiment.
Unless the context clearly indicates otherwise, otherwise singular " a kind of (a/person) " and " being somebody's turn to do (described) " are also intended to packet
Include plural form.
It will be appreciated that ought such as film, region, layer or element component be referred to as " " another component "upper", " connection
To " another component, " being integrated to " another component or when another component of "AND" " adjacent ", which can be directly described another
On component, be directly connected to another component, be bonded directly to another component or with another component direct neighbor,
Or may exist intermediate module.It will be further understood that when component be referred to as " " two components " between " when, which can be with
It is unique component between the two components, or there may also be one or more intermediate modules.It will be further understood that working as group
When part referred to as " covers " another component, it can be the sole component for covering another component, or there may also be cover
Cover one or more intermediate modules of another component.
For ease of description, can be used here such as " ... under ", " in ... lower section ", " below ", "lower",
" in ... top ", " above " etc. spatially relative term elements or features as illustrated in the drawing and other are described
The relationship of elements or features.It will be appreciated that spatially relative term alsos attempt to include device other than the orientation drawn in figure
Different direction in use or operation.For example, being described as " " other elements or spy if the device in figure is reversed
The element of sign " below " or " under " or "lower" will then be positioned " " described other elements or features " top ".Therefore, show
Example property term " in ... lower section " and "lower" may include above and below two kinds of orientation.
Here, it when two or more elements or value are described as substantially identical to one another or each other approximately equal, will manage
Solution, the element or value it is equivalent each other, each other undistinguishable or as one of ordinary skill in the art will appreciate that
This can be distinguished but functionally mutually the same.It will be further understood that when two components or direction are described as being substantially parallel to each other
Or when extending vertically, described two components or direction are precisely parallel to each other or extend vertically, or general such as this field
It is logical the skilled person will understand that it is approximatively parallel each other in measurement error or extend vertically.Although moreover it will be understood that
Parameter can be described as to have " about " some value here accoding to exemplary embodiment, but such as those skilled in the art
It will be understood that, the parameter can be accurately some value in measurement error or be approximately some value in measurement error.
Fig. 1 is the exemplary plan view for schematically showing display device 10 according to the exemplary embodiment of the disclosure.
Fig. 2 is the exemplary cross-sectional view for schematically showing the section of display device 10 of the interception of the line I-I' shown in Fig. 1.Fig. 3
It is the plan view for schematically showing the region A of display device 10 shown in Fig. 1.Fig. 4 is to schematically show the institute along Fig. 3
The exemplary cross-sectional view of the section of the display device 10 for the line II-II' interception shown.
Display device 10 includes being provided with the display area DA of multiple pixels and outer at the periphery DA of display area
Enclose region PA.The multiple pixel is not arranged in peripheral region PA.Substrate 100 includes display area DA and peripheral region PA.
Peripheral region PA includes pad (pad, or be " pad ") region PADA.Pad area PADA is various electronic devices or printed circuit
Plate electricity is attached and is provided with the region of first voltage line 210 and second voltage line 220.
Fig. 1 can also be understood to show the flat of the image of such as substrate 100 in the technique of manufacture display device 10
Face figure.Finally by the electronic device of the display device of manufacture 10 or the smart phone such as including display device 10, in order to
The width of the visible peripheral region PA of user is set to minimize or reduce, substrate 100 or a part of of other components can be bent.
For example, as shown in Figure 3, bending region BA can be located at pad area PADA and including in peripheral region PA
Between the DA of display area.In this case, by being bent substrate 100 in bending region BA, pad area PADA is at least
A part can be stacked with display area DA.Setting bending direction make pad area PADA be arranged in behind the DA of display area without
Cover display area DA.Therefore, user recognizes the major part that display area DA occupies display device 10.
Substrate 100 may include various flexible or flexible material, such as, with polyether sulfone (PES), polyacrylic acid
Ester, polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide
(PPS), the macromolecule resin for polyarylate (PAR), polyimides (PI) or cellulose-acetate propionate (CAP).It can be to base
The structure at bottom 100 makes various modifications.For example, substrate 100 can have multiple pileup layer structure, the multiple pileup layer structure includes
The barrier layer for separately including two layers of above-mentioned macromolecule resin and being arranged between described two layers, the barrier layer include inorganic material
Expect (for example, silica, silicon nitride, silicon oxynitride etc.).
Pixel in the DA of display area includes display element.Display element can be such as organic luminescent device 300.So
And display element is without being limited thereto.In the exemplary embodiment, display area DA includes first film transistor T1, the second film
Transistor T2, organic luminescent device 300 and setting are in first film transistor T1 and the second thin film transistor (TFT) T2 and organic hair
The first planarization insulating layer 141 and the second planarization insulating layer 142 between optical device 300 (see Fig. 2).It is more detailed referring to Fig. 2
Ground describes the structure of pixel.
In the exemplary embodiment, organic luminescent device 300 is electrically connected to first film transistor T1, the second film crystal
Pipe T2 and storage Cst.First film transistor T1 includes the first semiconductor layer Act1 and first gate electrode G1, and second is thin
Film transistor T2 includes the second semiconductor layer Act2 and the second gate electrode G2.
First semiconductor layer Act1 and the second semiconductor layer Act2 may include such as amorphous silicon, polysilicon, oxide half
Conductor or organic semiconducting materials.In the exemplary embodiment, the first semiconductor layer Act1 includes the first channel region C1, the first source
Area S1 and the first drain region D1.First source region S1 and the first drain region D1 are separately positioned at two opposite sides of the first channel region C1.
In the exemplary embodiment, the second semiconductor layer Act2 includes the second channel region C2, the second source region S2 and the second drain region D2.Second
Source region S2 and the second drain region D2 are separately positioned at two opposite sides of the second channel region C2.
The the first source region S1 and the first drain region D1 of first semiconductor layer Act1 can be understood to the first film crystal respectively
The source electrode and drain electrode of pipe T1.The the second source region S2 and the second drain region D2 of second semiconductor layer Act2 can be understood to respectively
The source electrode and drain electrode of second thin film transistor (TFT) T2.
In the exemplary embodiment, first gate electrode G1 and the second gate electrode G2 be set as respectively with the first semiconductor layer
The second channel region C2 of the first channel region C1 and the second semiconductor layer Act2 of Act1 are stacked.The setting of gate insulating layer 120 exists
Between first gate electrode G1 and the first semiconductor layer Act1 and between the second gate electrode G2 and the second semiconductor layer Act2.First
Each of gate electrode G1 and the second gate electrode G2 can be for example by including such as molybdenum (Mo), aluminium (Al), copper (Cu) and titanium
At least one of (Ti) single layer or multiple pileup layer that conductive material is formed.
In the exemplary embodiment of Fig. 2, first gate electrode G1 and the second gate electrode G2 setting are on the same layer.However,
The exemplary embodiment of the disclosure is without being limited thereto.For example, in the exemplary embodiment, first gate electrode G1 and the second gate electrode G2
It is arranged on two different layers.In addition, display device 10 is shown as first gate electrode in the exemplary embodiment of Fig. 2
The top gate type that G1 and the second gate electrode G2 is separately positioned on above the first semiconductor layer Act1 and the second semiconductor layer Act2 is shown
Device.However, the exemplary embodiment of the disclosure is without being limited thereto.For example, in the exemplary embodiment, display device 10 is first
Gate electrode G1 and the second gate electrode G2 is separately positioned on the bottom gate below the first semiconductor layer Act1 and the second semiconductor layer Act2
Type display device.
In the exemplary embodiment, storage Cst includes the first storage capacitor electrode CE1 and the second storage capacitance
Device electrode CE2.First storage capacitor electrode CE1 and the second storage capacitor electrode CE2 are stacked on top of each other.First storage
Electrode CE1 and the second storage capacitor electrode CE2 can be respectively included including, for example, at least one of Mo, Al, Cu and Ti
Low resistance conductive material.
In the exemplary embodiment, storage Cst and first film transistor T1 is stacked.First film transistor T1
It can be driving thin film transistor (TFT).While figure 2 show that storage Cst and first film transistor T1 are stacked and first
Storage capacitor electrode CE1 is the exemplary embodiment of the first gate electrode G1 of first film transistor T1, but the disclosure is shown
Example property embodiment is without being limited thereto.For example, in the exemplary embodiment, storage Cst is not folded with first film transistor T1
It sets.
In the exemplary embodiment, the setting of buffer layer 110 is brilliant in substrate 100 and first film transistor T1 and the second film
Between body pipe T2.Buffer layer 110 may include inorganic insulating material.For example, buffer layer 110 can be including silicon oxynitride, oxygen
The single layer or multiple pileup layer of at least one of SiClx and silicon nitride.
In the exemplary embodiment, gate insulating layer 120 is arranged in first gate electrode G1 and the first semiconductor layer Act1
Between and second grid G2 and the second semiconductor layer Act2 between.Gate insulating layer 120 may include inorganic insulating material.Example
Such as, gate insulating layer 120 can be single layer or multiple pileup including at least one of silicon oxynitride, silica and silicon nitride
Layer.
In the exemplary embodiment, interlayer insulating film 130 covers first film transistor T1 and the second thin film transistor (TFT) T2.
In Fig. 2, interlayer insulating film 130 is shown as including the first interlayer insulating film 131 and the second interlayer insulating film 132.According to showing
Example property embodiment, the first interlayer insulating film 131 are set up directly on first film transistor T1 and the second thin film transistor (TFT) T2, and
And/or person is set up directly on the first storage capacitor electrode CE1.Second interlayer insulating film 132 is arranged in the second storage capacitance
On device electrode CE2.Each of first interlayer insulating film 131 and the second interlayer insulating film 132 can be for example including nitrogen oxidation
The single layer or multiple pileup layer of at least one of silicon, silica and silicon nitride.For example, the first interlayer insulating film 131 can be by
The single layer that silicon nitride is formed, the second interlayer insulating film 132 can be the multiple pileup layer formed by silicon nitride and silica.
In the exemplary embodiment, data line DL is arranged on interlayer insulating film 130.It is thin that data line DL is electrically connected to switch
Film transistor simultaneously provides it data-signal.Data line DL can be at least one among for example including Al, Cu, Ti and its alloy
The single layer or multiple pileup layer of kind.In the exemplary embodiment, data line DL is three layers of structure with Ti/Al/Ti.
In the exemplary embodiment, inorganic protective layer PVX covers data line DL.Inorganic protective layer PVX can be for example by
Silicon nitride (SiNx) and silica (SiOx) at least one of formed single layer or multiple pileup layer.Inorganic protective layer PVX is covered simultaneously
Protect the wiring (for example, first voltage line 210 and second voltage line 220 of Fig. 3) being exposed in peripheral region PA.For example,
In a part (for example, a part of peripheral region PA) of substrate 100, it can be exposed to identical with the technique for forming data line DL
The wiring being formed simultaneously in technique.Although the expose portion of wiring may be due to for making the pixel electrode 310 being described below
Patterned etchant and be damaged, but because inorganic protective layer PVX covering data line DL and with data line DL shape simultaneously
At wiring part, so can protect during the patterning for making pixel electrode 310 wiring it is against damages.
In the exemplary embodiment, drive voltage line PL and data line DL is arranged on two different layers.Here, phrase
" A and B are arranged/are arranged on two different layers " is expressed as follows situation: at least one insulating layer is set between A and B, and
In A and B, one is arranged under at least one described insulating layer, and another is arranged at least one described insulating layer.?
In exemplary embodiment, the first planarization insulating layer 141 is arranged between drive voltage line PL and data line DL.
Drive voltage line PL can be single layer or multiple pileup for example including at least one of Al, Cu, Ti and its alloy
Layer.For example, drive voltage line PL can be three layers of the structure with Ti/Al/Ti.While figure 2 show that drive voltage line PL
The construction being provided only on the first planarization insulating layer 141, but the exemplary embodiment of the disclosure is without being limited thereto.For example, showing
In example property embodiment, drive voltage line PL is connected to by the through-hole being formed in the first planarization insulating layer 141 and data line
The additional pressure-wire for the lower part that DL is formed together.It is thereby possible to reduce the resistance of drive voltage line PL.
In the exemplary embodiment, the second planarization insulating layer 142 covers drive voltage line PL.First planarization insulating layer
141 and second planarization insulating layer 142 may include organic material.Organic material may include such as PI, such as poly- methyl-prop
E pioic acid methyl ester (PMMA), the commercial polymer of polystyrene (PS), the polymeric derivative with phenolic group, acrylate copolymer,
Aryl ether polymer, amide polymer, fluoropolymer, xylylene po1ymer, vinyl alcohol polymer and its blend.
In the exemplary embodiment, organic luminescent device 300 is arranged on the second planarization insulating layer 142.Organic light emission
Device 300 is including pixel electrode 310, to electrode 330 and setting in pixel electrode 310 and between electrode 330 and including hair
Penetrate the middle layer 320 of layer.
In the exemplary embodiment, pixel confining layer 150 is arranged in the second planarization insulating layer 142 and pixel electrode 310
On.Pixel confining layer 150 limits pixel by including opening corresponding with each pixel, wherein opening at least exposure corresponds to
Pixel electrode 310 central part.In the exemplary embodiment, pixel confining layer 150 increase pixel electrode 310 edge with
To the distance between the edge of electrode 330, to prevent the edge in pixel electrode 310 and be sent out between the edge to electrode 330
Raw electric arc.Pixel confining layer 150 can be formed such as the organic material as including PI, hexamethyldisiloxane.
In the exemplary embodiment, pixel electrode 310 passes through the first connection metal CM1 and the second connection metal CM2 connection
To the pixel circuit for including first film transistor T1, the second thin film transistor (TFT) T2 and storage Cst.
Middle layer 320 may include low molecular weight material or polymer material.When middle layer 320 includes low molecular weight material
When, middle layer 320 can have hole injection layer (HIL), hole transmission layer (HTL), emission layer (EML), electron transfer layer
(ETL), the singles such as electron injecting layer (EIL) or the structure that stacks in multiple times.Low molecular weight material may include such as with copper
Phthalocyanine (CuPc), N, N'- bis- (naphthalene -1- base)-N, N'- diphenyl-benzidine (NPB) or three -8-hydroxyquinoline aluminium (Alq3) be
The various organic materials of example.These layers can be formed by using vacuum deposition method.
When middle layer 320 includes polymer material, middle layer 320 usually can have the structure including HTL and EML.
In this case, HTL may include poly- (3,4-ethylene dioxythiophene) (PEDOT), and EML may include such as with polyphenyl
Support the polymer material for vinylene (PPV) and polyfluorene.However, the structure of middle layer 320 is not limited to above-mentioned construction, and in
Interbed 320 can have any one of various structures.For example, in the exemplary embodiment, middle layer 320 may include with
Multiple pixel electrodes (each pixel electrode is equivalent with pixel electrode 310) corresponding integrated layer or it is patterned respectively with it is more
The corresponding multiple layers of a pixel electrode 310.
On the one hand, in the present embodiment, middle layer 320, for example, luminescent layer (EML) may include quantum dot
(QuantumDot) substance.The core of quantum dot can selected from II-VI group compound, III-V compound, group IV-VI compound,
IV race element, IV compounds of group and combinations thereof.
II-VI group compound can be selected from binary compound, ternary compound and quaternary compound, the binary compound
Selected from CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MeSe, MgS and its mixture；The ternary compound
Object be selected from AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe,
CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and its
Mixture；The quaternary compound be selected from HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe,
CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and its mixture.
III-V compound can be selected from binary compound, ternary compound and quaternary compound, the binary compound
Selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and its mixture；The ternary
Compound be selected from GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP,
InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP and its mixture；The quaternary compound be selected from GaAlNAs,
GaAlNSb、GaAlPAs、GaAlPSb、GaInNP、GaInNAs、GaInNSb、GaInPAs、GaInPSb、InAlNP、
InAlNAs, InAlNSb, InAlPAs, InAlPSb and its mixture.
Group IV-VI compound can be selected from binary compound, ternary compound and quaternary compound, the binary compound
Selected from SnS, SnSe, SnTe, PbS, PbSe, PbTe and its mixture；The ternary compound be selected from SnSeS, SnSeTe,
SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and its mixture；The quaternary compound is selected from
SnPbSSe, SnPbSeTe, SnPbSTe and its mixture.IV race element can be selected from Si, Ge and its mixture.IV compounds of group
It can be the binary compound selected from SiC, SiGe and its mixture.
At this point, binary compound, ternary compound or quaternary compound can be present in particle with uniform concentration, or
Person can be divided into the different state in part with concentration distribution and is present in identical particle.In addition, a quantum dot can also have
There is the structure of the core shell around other quantum dots.The interface of core and shell can have the concentration of element being present in shell in
The concentration gradient (gradient) that the heart reduces.
In some embodiments, quantum dot can have including the core comprising above-mentioned nanocrystal and surround the shell of the core
Nucleocapsid structure.The shell of the quantum dot may be used as the protection for preventing the chemical modification of the core to keep characteristic of semiconductor
Layer and/or as assign quantum dot electrophoretic characteristic charged layer (charging layer).The shell can be single-layer or multi-layer.
The interface of core and shell can have the concentration gradient that the concentration of element being present in shell is reduced towards center.The shell of the quantum dot
Example include metal or nonmetallic oxide, semiconducting compound or combinations thereof.
For example, the metal or nonmetal oxide can be exemplified as SiO2、Al2O3、TiO2、ZnO、MnO、Mn2O3、
Mn3O4、CuO、FeO、Fe2O3、Fe3O4、CoO、Co3O4With the binary compound or MgAl of NiO etc.2O4、CoFe2O4、NiFe2O4With
CoMn2O4Deng ternary compound, however, the present invention is not limited thereto.
The semiconducting compound can be exemplified as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS,
GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb etc., but the present invention is unlimited
In this.
Quantum dot can have the full width at half maximum (FWHM) (FWHM) of about 45nm or smaller emission wavelength spectra, preferably 40nm or
The full width at half maximum (FWHM) of smaller emission wavelength spectra, the full width at half maximum (FWHM) of even more preferably about 30nm or smaller emission wavelength spectra, and
And within this range, excitation purity or color reprodubility can be improved.Moreover, through the light of the quantum dot emission in front direction
Transmitting, so as to improve wide viewing angle.
The shape of quantum dot is form commonly used in the art without especially limiting, but more specifically, be can be used
Spherical shape, pyramid, multi-arm shape (multi-arm) or cube (cubic) nanoparticle, nanotube, nano wire, Nanowire
The form of peacekeeping nano slabby particle etc..
Quantum dot can adjust the color of transmitting light according to particle size, therefore quantum dot can have such as blue, red
With the various luminescent colors of green etc..
In the exemplary embodiment, display area DA is covered to electrode 330.For example, can be formed as one to electrode 330
Type, to cover the multiple organic luminescent devices being equal with organic luminescent device 300.
Encapsulated layer 400 is arranged on to electrode 330.Encapsulated layer 400 protects organic luminescent device 300 from from display dress
Set the influence of the moisture or oxygen of 10 outside.For example, encapsulated layer 400 seals organic luminescent device 300.In order to protect organic light emission
Device 300, encapsulated layer 400 is on the display area DA for be provided with organic luminescent device 300 and in the periphery of display area DA
Extend on the peripheral region PA at place.As shown in Figure 2, encapsulated layer 400 may include multiple pileup layer structure.For example, exemplary
In embodiment, encapsulated layer 400 includes the first inorganic encapsulated layer 410, organic encapsulation layer 420 and the second inorganic envelope sequentially stacked
Fill layer 430.
First inorganic encapsulated layer 410 is formed in on electrode 330, and may include such as silica, silicon nitride and/or
Silicon oxynitride etc..First inorganic encapsulated layer 410 can be along the conformal landform of structure being arranged in below the first inorganic encapsulated layer 410
At.
In the exemplary embodiment, the setting of organic encapsulation layer 420 is on the first inorganic encapsulated layer 410 and sufficiently thick, makes
The upper surface for obtaining organic encapsulation layer 420 is substantially flat.Organic encapsulation layer 420 may include such as PET, PEN, poly- carbonic acid
At least one of ester, PI, polyvinyl sulfonate, polyformaldehyde, PAR and hexamethyldisiloxane.
Second inorganic encapsulated layer 430 covers organic encapsulation layer 420.Second inorganic encapsulated layer 430 may include for example aoxidizing
Silicon, silicon nitride and/or silicon oxynitride etc..In the exemplary embodiment, the first inorganic encapsulated layer 410 and the second inorganic encapsulated layer
430 have the area bigger than the area of organic encapsulation layer 420, and are in contact with each other outside organic encapsulation layer 420.Therefore, exist
In exemplary embodiment, due to the first inorganic encapsulated layer 410 and the second inorganic encapsulated layer 430, organic encapsulation layer 420 is not exposed to
It is external.
As described above, according to an exemplary embodiment of the present disclosure, due to encapsulated layer 400 include the first inorganic encapsulated layer 410,
Organic encapsulation layer 420 and the second inorganic encapsulated layer 430, by using this multilayered structure, even if being split in encapsulated layer 400
Line, crackle will not connect between the first inorganic encapsulated layer 410 and organic encapsulation layer 420, or organic encapsulation layer 420 with
It is connected between second inorganic encapsulated layer 430.Therefore, in the exemplary embodiment, can prevent or reduce from external moisture
Or oxygen penetrates into the formation in the path in the DA of display area via it.
In the exemplary embodiment, first voltage line 210 and second voltage line 220 are arranged in peripheral region PA.First
Each of pressure-wire 210 and second voltage line 220 provide driving voltage to organic luminescent device 300.In addition, in exemplary reality
It applies in example, bending region BA is arranged in peripheral region PA.
For example, in the exemplary embodiment, first voltage line 210 is the first supply voltage (ELVDD) line, second voltage line
220 be second source voltage (ELVSS) line.In the exemplary embodiment, second voltage line 220 is directly connected to electrode 330
Or it is connected to via other wiring to electrode 330.
In the exemplary embodiment, as shown in fig. 1, the side (example of display area DA is arranged in first voltage line 210
Such as, the first side of display area DA) and pad area PADA between.In the exemplary embodiment, first voltage line 210 includes first
Principal voltage line 212 and the first connection unit 214.First principal voltage line 212 and the first connection unit 214 is set as and display area
The side of DA is corresponding.For example, the first principal voltage line 212 can be set to and show when display area DA is rectangle
Any side of region DA is corresponding.In the exemplary embodiment, the first principal voltage line 212 and any one side are substantially parallel simultaneously
And there is the length bigger than the length of any side.Any side corresponding with the first principal voltage line 212 is and pad area
PADA adjacent side.
In the exemplary embodiment, the first connection unit 214 is prominent from the first principal voltage line 212 and prolongs along first direction
It stretches.First direction is the direction extended from display area DA to pad area PADA.First connection unit 214 may be coupled to single pad
Member.
In the exemplary embodiment, other sides of display area DA are arranged in (for example, display area in second voltage line 220
The side of not set first voltage line 210 at its of DA) at.For example, in the exemplary embodiment, second voltage line 220 is around aobvious
Show remaining side (for example, remaining side for being not provided with first voltage line 210 of display area DA) of region DA.For example, referring to Fig. 1
Exemplary embodiment, display device 10 include four sides, first voltage line 210 be arranged in display area DA the first side and pad
Between the PADA of region, and second voltage line 220 around display area DA remaining three side (for example, in addition to the first side it
Outer side).In the exemplary embodiment, second voltage line 220 include with two opposed ends of the first principal voltage line 212 and
The corresponding second principal voltage line 222 in the remaining side of display area DA, and from the end of the second principal voltage line 222 towards first
The second connection unit 224 direction protrusion and extended in a first direction.Second connection unit 224 may be coupled to single pad member.
As described above, as shown in Figure 3, the exemplary embodiment of the disclosure includes bending region BA.It is arranged in viewing area
Bending region BA between domain DA and pad area PADA is to eliminate buffer layer 110, gate insulating layer 120 and interlayer insulating film
The region of 130 part.Hereinafter, buffer layer 110, gate insulating layer 120 and interlayer insulating film 130 are referred to as inorganic insulation
Layer IL.Inorganic insulation layer IL be construed as with the layer that at the corresponding position bending region BA includes groove (see Fig. 4).It is logical
The a part for removing inorganic insulation layer IL from bending region BA is crossed, bending behaviour can be easily performed in bending region BA
Make, and can prevent cracked in inorganic insulation layer IL during bending operation.
In the exemplary embodiment, the region for eliminating inorganic insulation layer IL is filled with organic material layer 160.
In the exemplary embodiment, the organic material layer 160 being mainly disposed in bending region BA extends to and buckled zone
Domain BA adjacent un-flexed region.Organic material layer 160 can compensate the height for the bending region BA that inorganic insulation layer IL is removed
It is poor to spend, and absorbs the stress as caused by bending operation.Therefore, according to an exemplary embodiment of the present disclosure, effectively reduce
Due to be arranged in bending region BA in and for by electric signal from be arranged in pad area PADA pad (pad, or for " weldering
Disk ") unit be transferred to display area DA various types wiring bending operation and caused by stress concentration.
Organic material layer 160 may include for example acrylic acid, methacrylic acid, polyester, polyethylene, polypropylene, PET,
At least one of PEN, polycarbonate, polyimides, polyvinyl sulfonate, polyformaldehyde, PAR and hexamethyldisiloxane.
Fig. 5 is the exemplary plan view for schematically showing the region B of display device 10 shown in Fig. 3.Fig. 6 is signal
Property show the interception of the line III-III' shown in Fig. 5 region B section exemplary cross-sectional view.Fig. 7 is schematically
The exemplary cross-sectional view of the section of the region B of the interception of the line IV-IV' shown in Fig. 5 is shown.
Firstly, in peripheral region PA (see Fig. 1), removing a part of the second planarization insulating layer 142 referring to Fig. 5.When
When eliminating a part of the second planarization insulating layer 142, first be arranged under the second planarization insulating layer 142 is had also been removed
Planarization insulating layer 141 (see Fig. 2).Therefore, when the second planarization insulating layer 142 is described below, the second planarization is exhausted
The description of edge layer 142 also can be applied to the first planarization insulating layer 141 (see Fig. 2).
The region of the second planarization insulating layer 142 is eliminated around display area DA.It is therefore prevented that from external moisture
It is penetrated into the DA of display area by the second planarization insulating layer 142 formed by organic material and the first planarization insulating layer 141.
Accoding to exemplary embodiment, although at least the first connection unit 214 and the second connection unit 224 can be exposed to removal
In the region of second planarization insulating layer 142, but since inorganic protective layer PVX is formed in the first connection unit 214 and
Two connection units, 224 top, therefore during making pixel electrode 310 (see Fig. 2) patterned technique, it can protect the first connection
Unit 214 and the second connection unit 224 are against damages.
Accoding to exemplary embodiment, when forming encapsulated layer 400 (see Fig. 2), more specifically, when forming organic encapsulation layer
When 420, restriction is to be used in the material to form organic encapsulation layer 420 coated in the region of earlier set.In order to limit
Material is stated, as shown in Figure 5, the first dam 610 can be arranged in peripheral region PA (see Fig. 1).First dam 610 is located at external zones
To be separated with the second planarization insulating layer 142 in domain PA (see Fig. 1).
First dam 610 can have multiple pileup layer structure.For example, as shown in Figure 7, in the exemplary embodiment, first
Dam 610 has first layer 611, the second layer 613 and the successively stacked structure of third layer 615.In the exemplary embodiment, first
Layer 611 is formed simultaneously with the second planarization insulating layer 142 and is formed by material identical with the second planarization insulating layer 142, the
It is formed simultaneously with pixel confining layer 150 for two layer 613 and is formed by material identical with pixel confining layer 150.It can be by using
Material identical with the material of the second layer 613 is additionally formed third layer 615 on the second layer 613.
The support of first dam 610 is used to form the middle layer 320 (see Fig. 2) of organic luminescent device 300 (see Fig. 2) or to electrode
The mask of 330 (see Fig. 2), and can protect the component being previously formed from contact mask and be damaged.In addition, being first
During forming organic encapsulation layer 420 on inorganic encapsulated layer 410, the first dam 610 can prevent from being used to form organic encapsulation layer 420
Material moves in the edge direction of substrate 100.
As shown in Figure 7, in the exemplary embodiment, the first inorganic encapsulated layer 410 and the covering of the second inorganic encapsulated layer 430
First dam 610 and the region for extending to 610 outside of the first dam.Therefore, moisture and oxygen can be more efficiently prevented to penetrate into from outside
Display device 10.
In the exemplary embodiment, the second dam 620 is formed at the position than 610 inside of the first dam.In exemplary reality
It applies in example, since the second dam 620 includes that can be formed simultaneously with the second layer 613 on the first dam 610 and by the with the first dam 610
It lower layer 623 that two layer of 613 identical material is formed and can be formed simultaneously with the third layer 615 on the first dam 610 and by with the
The upper layer 625 that the identical material of third layer 615 on one dam 610 is formed, therefore the height on the second dam 620 is higher than the first dam 610
It spends small.In the exemplary embodiment, the first dam 610 and the second dam 620 and the second planarization insulating layer 142 separate.For example, showing
In example property embodiment, the first dam 610 and the second dam 620 are by the material different from the material of the second planarization insulating layer 142 respectively
Different components made of material.
As described above, according to an exemplary embodiment of the present disclosure, by covering display area DA (see Fig. 1), the first dam 610
The material of organic encapsulation layer 420 can be prevented from being used to form towards the edge-diffusion of substrate 100 with the second dam 620.It therefore, can be with
It prevents from forming edge tail at organic encapsulation layer 420.
However, working as coating due to the quick variation of the step difference in the region that the second planarization insulating layer 142 is removed
When being used to form organic packaging materials (for example, liquid organic material) of organic encapsulation layer 420, it is used to form organic encapsulation layer
The reflux of 420 material can more acutely in the region that the second planarization insulating layer 142 is removed.In addition, with peripheral region
Width reduction/minimum of PA, the distance between the first dam 610 and the second dam 620 are gradually reduced.Therefore, it can be difficult to limit use
In the flowing for the material for forming organic encapsulation layer 420.Due to being used to form the material of organic encapsulation layer 420 along the first connection unit
214 and second connection unit 224 side on the direction towards pad area PADA (see Fig. 1) than forming the first dam 610 and the
It spreads fastly in two dams, 620 direction, forms edge tail at organic encapsulation layer 420 in order to prevent, it should interrupt and use
In diffusion of the material to pad area PADA (see Fig. 1) for forming organic encapsulation layer 420.
For this purpose, in the exemplary embodiment, being additionally formed the island dam extended in an essentially parallel manner with the first principal voltage line 212
162.For example, the length direction on island dam 162 extends in an essentially parallel manner with the first principal voltage line 212.It island dam 162 can part landform
At in the region that there is the material for being used to form organic encapsulation layer 420 high current to move.For example, in the exemplary embodiment, island dam
162 between display area DA (see Fig. 1) and pad area PADA (see Fig. 1).More specifically, in the exemplary embodiment, island
Dam 162 is located at so that in its position stacked with the first connection unit 214 and the second connection unit 224 simultaneously.In exemplary reality
It applies in example, island dam 162 is on the direction substantially vertical with the direction of the first connection unit 214 and the extension of the second connection unit 224
Extend.In the exemplary embodiment, two opposed ends on island dam 162 connect with the first connection unit 214 and second single respectively
Member 224 is stacked.For example, in the exemplary embodiment, the first end on island dam 162 and the first connection unit 214 are stacked, island dam
162 the second end opposite with the first end on island dam 162 and the second connection unit 224 are stacked.
In the exemplary embodiment, island dam 162 includes material identical with the material of aforementioned organic materials layer 160 (see Fig. 4)
Material.For example, in the exemplary embodiment, island dam 162 and organic material layer 160 (see Fig. 4) be formed simultaneously and by with organic material
The identical material of material of layer 160 is formed.Therefore, in the exemplary embodiment, island dam 162 is arranged than the first connection unit
214 and second on the low layer of connection unit 224, and inorganic protective layer PVX covers the first connection unit 214 and connect singly with second
The upper surface in the region between member 224.
As described above, when island dam 162 is formed in the material for being used to form organic encapsulation layer 420 in the dynamic region of high current
When, cause resistance in the flowing of material for being used to form organic encapsulation layer 420.Therefore, accoding to exemplary embodiment, work as coating
When being used to form the material of organic encapsulation layer 420, it can be effectively prevented and be used to form the material of organic encapsulation layer 420 and cross
One dam 610 and the edge for being diffused into substrate 100.
In the exemplary embodiment, inorganic protective layer PVX is formed on island dam 162, and island dam 162 is not directly contacted with
One inorganic encapsulated layer 410.For example, be stacked due to the first inorganic encapsulated layer 410 on the first island inorganic encapsulated Ceng410Yu dam 162
Inorganic protective layer PVX is directly contacted at position, therefore the bond strength of the first inorganic encapsulated layer 410 is not due to contacting by organic material
Expect the island dam 162 formed and weakens.Therefore, island dam 162 can be formed at various positions.For example, although Fig. 5 shows island dam
162 are arranged in the exemplary embodiment of 620 inside of the second dam, but the exemplary embodiment of the disclosure is without being limited thereto.For example, according to
Exemplary embodiment can form multiple island dams at various positions.
Fig. 8 to Figure 11 be schematically show the region B of display device 10 shown in Fig. 3 exemplary embodiment it is flat
Face figure.Hereinafter, for the ease of explaining, can be omitted previously further retouching referring to Fig. 5 to Fig. 7 element described and technique
It states.
Fig. 8 shows exemplary embodiment of the dam 162B in island between the first dam 610 and the second dam 620.Due to island dam
162B is used for the flowing to the material for being used to form organic encapsulation layer 420 (see Fig. 2) and provides resistance, so even if working as island dam 162B
When being arranged between the first dam 610 and the second dam 620, dam 162B in island, which is still controlled, is used to form organic encapsulation layer 420 (see Fig. 2)
Material reflux.Dam 162B in island can be formed simultaneously with the island dam 162 described referring to Fig. 7.
As shown in Figure 9, in the exemplary embodiment, dam 162C in island is arranged at the position in 610 outside of the first dam.With with
It is upper described similar, in the exemplary embodiment, even if island dam 162C is still when 162C setting in island dam is in 610 outside of the first dam
So control is used to form the reflux of the material of organic encapsulation layer 420 (see Fig. 2), and since dam 162C in island is not directly contacted with first
The bond property of inorganic encapsulated layer 410 (see Fig. 2), the first inorganic encapsulated layer 410 does not weaken.Island dam 162C can be with the island of Fig. 8
Dam 162B is formed simultaneously referring to the island dam 162 described Fig. 7.
Figure 10 shows the exemplary embodiment that dam 162D in island is formed at the position being stacked with the second dam 620.In example
Property embodiment in, when island dam 162D and the second dam 620 are stacked, the height on the second dam 620 is in the part being stacked with island dam 162D
Place locally increases.Therefore, the reflux for being used to form the material of organic encapsulation layer 420 (see Fig. 2) can be more efficiently prevented from.So
And the exemplary embodiment of the disclosure is without being limited thereto.For example, in the exemplary embodiment, dam 162D in island is also folded with the first dam 610
It sets.As another example, as shown in Figure 11, in the exemplary embodiment, formed island dam 162E so that its simultaneously with the first dam
Both 610 and the second dam 620 are stacked.In this case, in the exemplary embodiment, in the first dam 610 and the second dam 620
The height of at least one increases in overlay area.For example, at least one of the first dam 610 and the second dam 620 are in Overlay District
Height in domain (related to island dam 162E) can be bigger than the height in non-overlay area (with island dam 162E correlation).At these
In exemplary embodiment, island dam (for example, 162D, 162E) be can be set below the first dam 610 and the second dam 620.
According to an exemplary embodiment of the present disclosure, it by preventing from forming edge tail at organic encapsulation layer, can prevent
It is penetrated into display device from outside moisture or oxygen.
Although the disclosure is specifically illustrated in and described referring to the exemplary embodiment of the disclosure, this field
Ordinarily skilled artisan will understand that in the case where not departing from the spirit and scope of the disclosure being defined by the claims, it can
Wherein to make the various changes in form and in details.
Claims (24)
1. a kind of display device, the display device include:
Substrate, the peripheral region including display area, the periphery that the display area is arranged in, and be arranged in the external zones
Pad area in domain；
First voltage line, be arranged in the peripheral region and be located at the display area the first side and the pad area it
Between；
Second voltage line is arranged at other sides of the display area；And
Island dam is arranged between the display area and the pad area,
Wherein, the island dam is arranged on the layer lower than the first voltage line and the second voltage line,
Wherein, the first voltage line include the first principal voltage line and the first connection unit, wherein first connection unit from
The first principal voltage line is prominent, and extends towards the pad area,
Wherein, the second voltage line include the second principal voltage line and the second connection unit, wherein second connection unit from
The end of the second principal voltage line is prominent, and extends towards the pad area,
Wherein, the island dam is extended parallel to the first principal voltage line.
2. display device according to claim 1, wherein island dam setting is in first connection unit and described the
Between two connection units, the first end on the island dam and first connection unit are stacked, and the island dam with it is described
The opposite the second end of first end and second connection unit are stacked.
3. display device according to claim 1,
Wherein, the substrate further includes the bending region being arranged between the display area and the pad area,
Wherein, stack inorganic insulation layer on the substrate include be formed in it is recessed at the corresponding position in the bending region
Slot, and organic material layer is arranged in the groove,
Wherein, the island dam includes material identical with the organic material layer.
4. display device according to claim 1, the display device further include:
Thin film transistor (TFT) is arranged in the display area；
Display element is electrically connected to the thin film transistor (TFT)；
Planarization insulating layer is arranged between the thin film transistor (TFT) and the display element；
First dam is arranged in the peripheral region；And
Second dam is arranged in the peripheral region, wherein first dam and second dam and the planarization insulating layer
It separates,
Wherein, the island dam and at least one of first dam and second dam are stacked.
5. display device according to claim 4, wherein the island dam is arranged under first dam and second dam
Side, and institute of the height at least one of first dam and described second dam in first dam and second dam
It states and increases at the position that at least one is stacked with the island dam.
6. display device according to claim 1, the display device further include:
Thin film transistor (TFT) is arranged in the display area；
Display element is electrically connected to the thin film transistor (TFT)；
Encapsulated layer seals the display element；And
Inorganic protective layer is arranged between the island dam and the encapsulated layer.
7. display device according to claim 6, wherein the encapsulated layer includes:
Successively stacked the first inorganic encapsulated layer, organic encapsulation layer and the second inorganic encapsulated layer,
Wherein, the first inorganic encapsulated layer directly contacts at the position that the first inorganic encapsulated layer is stacked with the island dam
The inorganic protective layer.
8. display device according to claim 6, wherein the display device further include:
Data line, Xiang Suoshu thin film transistor (TFT) provides data-signal, and the inorganic protective layer covers the data line.
9. display device according to claim 6, the display device further include:
Planarization insulating layer is arranged between the thin film transistor (TFT) and the display element；And
First dam separates with the planarization insulating layer and surrounds the display area,
Wherein, the inorganic protective layer covers first connection unit between the planarization insulating layer and first dam
With second connection unit.
10. display device according to claim 1, the display device further include:
Thin film transistor (TFT) is arranged in the display area；
Display element is electrically connected to the thin film transistor (TFT)；
Planarization insulating layer is arranged between the thin film transistor (TFT) and the display element；
First dam is arranged in the peripheral region；And
Second dam is arranged in the peripheral region, wherein first dam and second dam and the planarization insulating layer
It separates,
Wherein, the island dam is arranged between the display area and second dam.
11. a kind of display device, the display device include:
Substrate, including display area, the peripheral region for the periphery that the display area is arranged in, setting in the peripheral region
Pad area and the bending region that is arranged between the display area and the pad area；
Thin film transistor (TFT) is arranged in the display area；
Display element is electrically connected to the thin film transistor (TFT)；
Data line, Xiang Suoshu thin film transistor (TFT) provide data-signal；
Inorganic protective layer covers the data line；
First voltage line is arranged in the peripheral region；
Second voltage line is arranged in the peripheral region, wherein the first voltage line and the second voltage line are to described
Display element provides driving voltage；
Island dam is arranged between the display area and the pad area；
Encapsulated layer seals the display element；
Inorganic insulation layer is arranged on the substrate, and recessed at position corresponding with the bending region including being formed in
Slot；And
Organic material layer is arranged in the groove,
Wherein, the island dam includes material identical with the organic material layer, and the inorganic protective layer is arranged described
Between island dam and the encapsulated layer.
12. display device according to claim 11,
Wherein, the first voltage line includes the first master being arranged between the first side of the display area and the pad area
Pressure-wire and the first connection unit prominent and towards pad area extension from the first principal voltage line,
Wherein, the second voltage line includes the second principal voltage line at other sides of the display area being arranged in and from institute
The end for stating the second principal voltage line is prominent and towards the second connection unit that the pad area extends,
Wherein, the island dam is arranged on the layer lower than the first voltage line and the second voltage line, and with described
One principal voltage line extends parallel to,
Wherein, the island dam and first connection unit and second connection unit are stacked.
13. display device according to claim 12, wherein island dam setting first connection unit with it is described
Between second connection unit, the first end on the island dam and first connection unit are stacked, and the island dam with institute
It states the opposite the second end of first end and second connection unit is stacked.
14. display device according to claim 13, wherein the inorganic insulation layer cover first connection unit,
Second connection unit and the institute being exposed in the region between first connection unit and second connection unit
State island dam.
15. display device according to claim 12, the display device further include:
Planarization insulating layer is arranged between the thin film transistor (TFT) and the display element；
First dam is arranged in the peripheral region；And
Second dam is arranged in the peripheral region.
16. display device according to claim 15, wherein the island dam is arranged in the display area and described second
Between dam.
17. display device according to claim 15, wherein in the island dam and first dam and second dam
At least one is stacked.
18. display device according to claim 15, wherein island dam setting is than first dam and described by second
On the low layer in dam.
19. display device according to claim 15,
Wherein, the encapsulated layer includes the first successively stacked inorganic encapsulated layer, organic encapsulation layer and the second inorganic encapsulated layer,
Wherein, the first inorganic encapsulated layer directly contacts at the position that the first inorganic encapsulated layer is stacked with the island dam
The inorganic protective layer.
20. display device according to claim 19, wherein the first inorganic encapsulated layer and second inorganic encapsulated
Layer is in contact with each other on the outside of the organic encapsulation layer, and the first inorganic encapsulated layer and the second inorganic encapsulated layer prolong
Reach the outside on first dam.
21. display device according to claim 1, the display device further comprises:
Thin film transistor (TFT) in the display area and the display element for being electrically connected to the thin film transistor (TFT),
Wherein, the display element further includes pixel electrode, is arranged in face of the pixel electrode to electrode and positioned at institute
State pixel electrode and it is described between electrode and with luminescent layer middle layer,
The luminescent layer includes quantum dot substance.
22. display device according to claim 21, wherein
The quantum dot substance includes core and the shell around the core, and the core includes being selected from II-VI group compound, iii-v
The substance of compound, group IV-VI compound, IV race element, IV compounds of group and combinations thereof.
23. display device according to claim 11, wherein
The display element further includes pixel electrode, is arranged in face of the pixel electrode to electrode and positioned at the pixel
Electrode and it is described between electrode and with luminescent layer middle layer,
The luminescent layer includes quantum dot substance.
24. display device according to claim 23, wherein
The quantum dot substance includes core and the shell around the core, and the core includes being selected from II-VI group compound, iii-v
The substance of compound, group IV-VI compound, IV race element, IV compounds of group and combinations thereof.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20180027701 | 2018-03-08 | ||
| KR10-2018-0027701 | 2018-03-08 | ||
| KR10-2019-0026475 | 2019-03-07 | ||
| KR1020190026475A KR20190107271A (en) | 2018-03-08 | 2019-03-07 | Display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110246979A true CN110246979A (en) | 2019-09-17 |
Family
ID=67883058
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910178368.XA Pending CN110246979A (en) | 2018-03-08 | 2019-03-08 | Display device |
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| US20160293884A1 (en) * | 2015-04-01 | 2016-10-06 | Apple Inc. | Organic Light-Emitting Diode Displays with Crack Detection and Crack Propagation Prevention Circuitry |
| CN106409869A (en) * | 2015-07-29 | 2017-02-15 | 三星显示有限公司 | Organic light-emitting diode display |
| CN107180848A (en) * | 2016-03-11 | 2017-09-19 | 三星显示有限公司 | Display device and its manufacture method |
| CN107230680A (en) * | 2016-03-24 | 2017-10-03 | 三星显示有限公司 | Display device |
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2019
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160293884A1 (en) * | 2015-04-01 | 2016-10-06 | Apple Inc. | Organic Light-Emitting Diode Displays with Crack Detection and Crack Propagation Prevention Circuitry |
| CN106409869A (en) * | 2015-07-29 | 2017-02-15 | 三星显示有限公司 | Organic light-emitting diode display |
| CN107180848A (en) * | 2016-03-11 | 2017-09-19 | 三星显示有限公司 | Display device and its manufacture method |
| CN107230680A (en) * | 2016-03-24 | 2017-10-03 | 三星显示有限公司 | Display device |
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