CN110246831A - A kind of III nitride semiconductor epitaxial structure with antistatic layer - Google Patents
A kind of III nitride semiconductor epitaxial structure with antistatic layer Download PDFInfo
- Publication number
- CN110246831A CN110246831A CN201910433150.4A CN201910433150A CN110246831A CN 110246831 A CN110246831 A CN 110246831A CN 201910433150 A CN201910433150 A CN 201910433150A CN 110246831 A CN110246831 A CN 110246831A
- Authority
- CN
- China
- Prior art keywords
- iii nitride
- epitaxial structure
- nitride semiconductor
- falling hexagonal
- falling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 97
- 239000004065 semiconductor Substances 0.000 title claims abstract description 84
- 241000209202 Bromus secalinus Species 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims description 10
- 238000013508 migration Methods 0.000 claims description 8
- 230000005012 migration Effects 0.000 claims description 8
- 230000005669 field effect Effects 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 3
- 238000000407 epitaxy Methods 0.000 claims description 3
- 230000035515 penetration Effects 0.000 claims description 3
- 238000000338 in vitro Methods 0.000 claims 1
- 238000002360 preparation method Methods 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 13
- 239000000758 substrate Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000003860 storage Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000011435 rock Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000012216 screening Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0688—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions characterised by the particular shape of a junction between semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of III nitride semiconductor epitaxial structure with antistatic layer, successively includes: III nitride semiconductor epitaxial structure front end portion, AlxGa(1‑x)N antistatic layer and III nitride semiconductor epitaxial structure further part form the wimble structure of falling hexagonal being made of plane and the cone cell of falling hexagonal hole, Al at the threading dislocation line position in III nitride semiconductor epitaxial structure front end portionxGa(1‑x)N antistatic layer is formed on the wimble structure of falling hexagonal.AlxGa(1‑x)N antistatic layer is noticeably greater than its thickness in the plane in the thickness of the cone cell of falling hexagonal hole side wall, and cheats cone bottom position in the cone cell of falling hexagonal and be filled with AlxGa(1‑x)N simultaneously forms a platform, it permits the pass through dislocation line and is formed about the resistance much higher than the structural plan of falling hexagonal cone position in the cone cell of falling hexagonal hole bottom, to which the antistatic property of III nitride semiconductor epitaxial structure be substantially improved, it is allowed to close to the due high-antistatic ability of group III-nitride without threading dislocation.
Description
Technical field
The present invention relates to III nitride semiconductor epitaxial structures, more particularly, to a kind of III group with antistatic layer
Nitride semiconductor epitaxial structure.
Background technique
During semiconductor devices production, test, packaging, storage, transport, installation and use, it may be said that constantly
Electrostatic will be touched by carving, and its voltage value is differed from several hectovolts to tens of thousands of volts.Although people are prevented by various methods
The generation of electrostatic, but still cannot accomplish to completely eliminate electrostatic.This not only brings semiconductor devices production, test, packaging, storage
The increased costs for the links such as depositing, transport, installing and using, return the manufacturing yield of semiconductor devices, service life and
Reliability is brought a negative impact.For example, damage of the electrostatic to semiconductor devices, can reduce production yield rate；It is installing or is using
In the process, the damage of semiconductor device portion caused by electrostatic or completely damage, entirety where seriously affecting semiconductor devices are set
Standby or instrument reliability and service life.
Group-III nitride is one of the Typical Representative of third generation semiconductor, since it is with high electron mobility, high saturation
Speed, high breakdown field strength, high heat conductance, lower dielectric constant, chemical stability is good, Radiation hardness is strong, direct band gap, band
Gap is covered from red to many advantages such as ultraviolet spectral regions, micro- in photoelectron, high temperature high power electronic device and high frequency
Wave device application aspect has wide prospect, such as can make light emitting diode (LED), laser diode (LD), photoelectricity
Detector, high electron mobility transistor (HEMT), field effect transistor, microwave device etc..The maturation the most of development at present
It is light emitting diode, is widely applied in fields such as semiconductor lighting, display, backlights, has been made for global energy-saving and emission-reduction great
Contribution.Otherwise application is also just obtaining the highest attention of global researcher and manufacturing enterprise.According to theoretical prediction, due toGroup-III nitride has the characteristics that high breakdown field strength, antistatic effect should be very good.However, for a long time due to not having
The price of single crystalline substrate or single crystalline substrate is very high, makesGroup-III nitride generallys use foreign substrate and carries out epitaxial growth, often
Substrate material includes sapphire (Al2O3) monocrystalline, silicon carbide (SiC) monocrystalline and silicon (Si) monocrystalline etc..Heteroepitaxial growth mistake
Cheng Zhong, due to foreign substrate andBiggish lattice mismatch and thermal mismatching cause between group-III nitrideGroup-III nitride penetrates
Dislocation density is typically up to 108─1010 cm-2Magnitude.These highdensity dislocations are usuallyIt is thin in nitride devices
Weak link is easy to produce electric leakage, when bearing electrostatic, is also easiest to breakdown, greatly reducesGroup-III nitride device
The antistatic effect of part is far below the antistatic effect of deviceThe theoretical antistatic effect of group-III nitride.In order to solveThe problem of group-III nitride antistatic difference due to caused by dislocation density height, scientific research personnel propose many methods, overview
Getting up, there are mainly two types of thinkings: one is by external means, be device one in parallel neat during device is installed and used
Diode of receiving carrys out release electrostatic, to protectNitride semiconductor devices are not by electrostatic damage；Another kind be fromRace
Nitride itself is started with, that is, is reducedThe defects of threading dislocation in group nitride material density, strengthening electric current extension makes quiet
Charge is distributed more uniformly across in device, to reduce part by the risk of electrostatic breakdown.The first thinking can very effectively
Ground solves the problems, such as the electrostatic breakdown in use process, but will increase cost (because additionally to increase a Zener diode and
Corresponding installation cost), and not can solveNitride semiconductor devices are in production, test, packaging, storage, transport, peace
Other link electrostatic damage problems such as dress.Comparatively cost is lower for second of thinking, but due to being difficult to be greatly lowered
Threading dislocation defect in group nitride material, so that the effect that this method obtains is limited, the semiconductor devices usually obtained is anti-
Electrostatic capacity is difficult to bear 10,000 volts or more of electrostatic impact from several hectovolts to several kilovolts.And actual production, test, packet
Dress, storage, transport, installation and the electrostatic pressure that 10,000 volts or more are often encountered in, this is rightGroup-III nitride semiconductor device
Part and equipment where it and instrument are a huge hidden danger.In addition, in order to obtain with a certain range antistatic effect
Semiconductor devices, can usually introduce the link of electrostatic screening in process of production, specific practice is to apply specific electricity to device
The electrostatic of pressure volt value is very tested, and the device damaged completely by electrostatic is sifted out.However, electrostatic screening can make to give birth to first
Increased costs are produced, a degree of damage also secondly are caused to the device not damaged completely, to the subsequent use reliability of device
Bring hidden danger.Therefore, obtaining has high-antistatic abilityNitride semiconductor devices seem extremely important.
Summary of the invention
The purpose of the present invention is to provide a kind of III nitride semiconductor epitaxial structure with antistatic layer, this is anti-
Electrostatic layer can makeThreading dislocation near zone in group-III nitride becomes high resistance spy compared to far from threading dislocation region
Property, thusWhen nitride semiconductor devices bear high voltage electrostatic, flow through electric current from threading dislocation position, and
It is more to be evenly distributed within no threading dislocation region, is equivalent to and shields a large amount of threading dislocation defect, to be substantially improvedThe antistatic property of nitride semiconductor devices is allowed to close to without threading dislocationThe due highly resistance of group-III nitride
Electrostatic capacity.
The object of the present invention is achieved like this:
A kind of III nitride semiconductor epitaxial structure with antistatic layer, includingGroup-III nitride semiconductor epitaxy junction
Structure front end portion andGroup-III nitride semiconductor epitaxial structure further part, it is characterised in that: describedGroup-III nitride half
Conductor epitaxial structure front end portion and describedBetween group-III nitride semiconductor epitaxial structure further part inserted with
AlxGa(1-x)N antistatic layer；It is describedThe wimble structure of falling hexagonal is contained in group-III nitride semiconductor epitaxial structure front end portion, described
The wimble structure of falling hexagonal is formed in describedAt threading dislocation line position in group-III nitride semiconductor epitaxial structure front end portion,
The wimble structure of falling hexagonal is made of plane and the cone cell of the falling hexagonal hole inlayed planar, threading dislocation line and the cone cell of falling hexagonal hole
Bore the intersection of vertex (vertices) end；The AlxGa(1-x)N antistatic layer is formed on the wimble structure of falling hexagonal and fills the hexagonal
Cone cell cheats cone bottom shape into a platform；The III nitride semiconductor epitaxial structure further part is located at the AlxGa(1-x)N
It is filled and led up on antistatic layer and by the cone cell of the falling hexagonal hole that the wimble structure of falling hexagonal is formed；The AlxGa(1-x)N antistatic layer
Cheating side wall and the cone cell of falling hexagonal hole cone bottom position in the plane for the wimble structure of falling hexagonal, the cone cell of falling hexagonal has different thickness；
The cone cell of falling hexagonal hole surface width across corners are L, the AlxGa(1-x)N antistatic layer is in the structural plan of falling hexagonal cone
Al component 0.3≤x≤1, with a thickness of h1, the AlxGa(1-x)Al component of the N antistatic layer in the cone cell of falling hexagonal hole side wall
0.3≤x≤1, with a thickness of h2, the AlxGa(1-x)N antistatic layer cheats the 0.3≤x of Al component at cone bottom in the cone cell of falling hexagonal
≤ 1, width L1, wherein 2≤h2/h1,50nm≤L≤500nm, 0.1≤L1/L≤0.8.
The wimble structure of falling hexagonal can also be formed by adding the one layer of wimble structure of falling hexagonal forming layer；The hexagonal cone
The cone cell of the falling hexagonal hole that structure is formed can also be filled and led up by adding the one layer of wimble structure of falling hexagonal merging layer.
The AlxGa(1-x)N antistatic layer cheats side wall and hexagonal in the plane for the wimble structure of falling hexagonal, the cone cell of falling hexagonal
Cone cell hole cone bottom position has different Al components, and AlxGa(1-x)N antistatic layer is cheated cone bottom position in the cone cell of falling hexagonal and is filled
Al component be higher than AlxGa(1-x)Al component of the N antistatic layer in the plane for the wimble structure of falling hexagonal and the cone cell of falling hexagonal hole side wall.
It is describedGroup-III nitride semiconductor epitaxial structure isLight emitting diode epitaxial structure, the laser of group-III nitride
Diode epitaxial structure, photodetector epitaxial structure, high electronic migration rate transmistor epitaxial structure, field effect transistor extension
One of structure or microwave device epitaxial structure.
The plane of the wimble structure of falling hexagonal is(0001) face of group nitride material system, the cone cell of falling hexagonal hole
Six conical surfaces areSix faces of group nitride material system { 10-11 } face race；In the wimble structure of falling hexagonal fall hexagonal cone
Shape hole distribution density in the plane is ρ, falls the number of hexagonal cone as on unit area, ρ withGroup-III nitride semiconductor
Penetration dislocation density in epitaxial structure is of substantially equal, and 1 × 106 cm-2≤ρ≤1×1010 cm-2。
It is described with antistatic layerGroup-III nitride semiconductor epitaxial structure can fall hexagonal comprising one layer of the above
Wimble structure and the AlxGa(1-x)N antistatic layer.
Present invention is characterized in that first in one kindGroup-III nitride semiconductor epitaxial structureGroup-III nitride material
Expect that internal threading dislocation line position forms the wimble structure of falling hexagonal, one layer of Al is then set on the basis of the wimble structure of falling hexagonalxGa(1-x)
N antistatic layer, this AlxGa(1-x)N antistatic layer is noticeably greater than its thickness in the plane in the thickness of the cone cell of falling hexagonal hole side wall
(at least 2 times or more), and cheat cone bottom position in the cone cell of falling hexagonal and form a platform, forming platform means in threading dislocation
Line position is filled with a large amount of AlxGa(1-x)N, this allows for threading dislocation line and (including falls six near the bottom of the cone cell of falling hexagonal hole
Pyramidal hole bottom and side wall) form the resistance for being much higher than the structural plan of falling hexagonal cone position, especially closely threading dislocation line
The cone cell of falling hexagonal hole bottom due to being filled with a large amount of AlxGa(1-x)N and resistance highest, so that when having extra electric field, electricity
Stream does not flow through near threading dislocation line, effectively shields the electric leakage of threading dislocation line.Particularly, existGroup-III nitride is partly led
When body epitaxial structure bears high voltage electrostatic, electric current is not flowed through from threading dislocation position, but is more evenly distributed within nothing and is worn
Saturating dislocation region, to be substantially improvedThe antistatic property of group-III nitride semiconductor epitaxial structure is allowed to approach without penetrating
DislocationThe due high-antistatic ability of group-III nitride.
It is proposed by the invention a kind of with antistatic layerGroup-III nitride semiconductor epitaxial structure is that one kind both had
High-antistatic performance, the new construction for not increasing extra cost again.
Detailed description of the invention
Fig. 1 is sectional view of the invention；
Fig. 2 is that the present invention existsThe solid after the wimble structure of falling hexagonal is formed on group-III nitride semiconductor epitaxial structure front end portion
Figure；
Fig. 3 is that the present invention existsThe wimble structure of falling hexagonal is formed on nitride semiconductor devices front end portion and is set up
AlxGa(1-x)Perspective view after N antistatic layer；
Fig. 4 is that the present invention existsThe wimble structure of falling hexagonal is formed on nitride semiconductor devices front end portion and is set up
AlxGa(1-x)Top view after N antistatic layer；
Fig. 5 is application example of the present invention in high electron mobility transistor；
Fig. 6 is the application example one of the present invention in the light emitting diode；
Fig. 7 is the application example two of the present invention in the light emitting diode；
Wherein: 100-III nitride semiconductor epitaxial structure front end portion, 101-substrate, 102-buffer layer, 103-the
One resistive formation, 104-N-type layer, 105-preparation layer, 106-first segment preparation layer, 200-AlxGa(1-x)N antistatic layer, 201
- the wimble structure of falling hexagonal forming layer, 202-the wimble structure of falling hexagonal merging layer, 203-first layer AlxGa(1-x)N antistatic layer, 204
- second segment preparation layer, 205-second layer AlxGa(1-x)N antistatic layer, 300-after III nitride semiconductor epitaxial structure
Continuous part, 301-the second resistive formation, 302-channel layer, 303-barrier layer, 304-cap rock, 305-multiple quantum well layer, 306
- P-type electron barrier layer, 307-P-type layer, 308-third section preparation layer, 400-threading dislocation line, 500-the knot of falling hexagonal cone
Structure, 501-the cone cell of falling hexagonal hole, 502-plane.
Specific embodiment
Below with reference to embodiment and compares attached drawing invention is further described in detail.
The present invention proposes a kind of with antistatic layerGroup-III nitride semiconductor epitaxial structure.Such as Fig. 1, Fig. 2, Fig. 3,
It is a kind of shown in Fig. 4Group-III nitride semiconductor epitaxial structure, from the bottom to top successively are as follows:Group-III nitride semiconductor extension
Structure front end part 100, AlxGa(1-x)N antistatic layer 200 and describedGroup-III nitride semiconductor epitaxial structure further part
300；It is describedContain the wimble structure of falling hexagonal 500, the hexagonal cone in group-III nitride semiconductor epitaxial structure front end portion 100
Structure 500 is formed in described400 position of threading dislocation line in group-III nitride semiconductor epitaxial structure front end portion 100
Place, the wimble structure of falling hexagonal are made of plane 502 and the cone cell of the falling hexagonal hole 501 inlayed planar, 400 He of threading dislocation line
The cone vertex (vertices) end intersection in the cone cell of falling hexagonal hole 501；The AlxGa(1-x)N antistatic layer 200 is formed in the wimble structure of falling hexagonal
On 500 and 501 cone bottom shapes of the cone cell of the falling hexagonal hole are filled into a platform；The III nitride semiconductor epitaxy junction
Structure further part 300 is located at the AlxGa(1-x)It is fallen on N antistatic layer 200 and by what the wimble structure of falling hexagonal 500 was formed
Hexagonal cone cell hole 501 is filled and led up；The AlxGa(1-x)N antistatic layer 200 is in the plane 502 of the wimble structure of falling hexagonal 500, hexagonal cone
Shape, which cheats side wall 501 and the cone bottom position in the cone cell of falling hexagonal hole 501, has different thickness；The cone cell of falling hexagonal cheats 501 tables
It is L, the Al in face of angular breadthxGa(1-x)Al component 0.3≤x of the N antistatic layer 200 in the structural plan of falling hexagonal cone 502
≤ 1, with a thickness of h1, the AlxGa(1-x)N antistatic layer 200 cheats 0.3≤x of Al component of 501 side walls in the cone cell of falling hexagonal
≤ 1, with a thickness of h2, the AlxGa(1-x)N antistatic layer 200 the cone cell of falling hexagonal hole 501 cone bottom Al component 0.3≤
X≤1, width L1, wherein 2≤h2/h1,50nm≤L≤500nm, 0.1≤L1/L≤0.8.
The wimble structure of falling hexagonal 500 can also be formed by adding the one layer of wimble structure of falling hexagonal forming layer 201；It is described fall
The cone cell of the falling hexagonal hole 501 that hexagonal wimble structure 500 is formed can also be filled out by adding the one layer of wimble structure of falling hexagonal merging layer 202
It is flat.
The AlxGa(1-x)N antistatic layer 200 cheats 501 sides in the plane 502 of the wimble structure of falling hexagonal 500, the cone cell of falling hexagonal
Wall and 501 cone bottom position of the cone cell of falling hexagonal hole have different Al components, and AlxGa(1-x)N antistatic layer 200 is in hexagonal
The Al component of 501 cone bottom position filling of cone cell hole is higher than AlxGa(1-x)Plane 502 of the N antistatic layer 200 in the wimble structure of falling hexagonal
The cone cell of falling hexagonal cheats the Al component of 501 side walls.
It is describedGroup-III nitride semiconductor epitaxial structure isLight emitting diode epitaxial structure, the laser of group-III nitride
Diode epitaxial structure, photodetector epitaxial structure, high electronic migration rate transmistor epitaxial structure, field effect transistor extension
One of structure or microwave device epitaxial structure.
The plane of the wimble structure of falling hexagonal is(0001) face of group nitride material system, the cone cell of falling hexagonal hole
Six conical surfaces areSix faces of group nitride material system { 10-11 } face race；In the wimble structure of falling hexagonal 500 fall hexagonal
501 distribution density in plane 502 of cone cell hole is ρ, falls the number of hexagonal cone as on unit area, ρ withRace's nitridation
Penetration dislocation density in object semiconductor extension structure is of substantially equal, and 1 × 106 cm-2≤ρ≤1×1010 cm-2。
It is described with antistatic layerGroup-III nitride semiconductor epitaxial structure can fall hexagonal comprising one layer of the above
Wimble structure 500 and the AlxGa(1-x)N antistatic layer 200.
Embodiment 1:
The high electronic migration rate transmistor epitaxial structure of existing group III-nitride sequentially consists of: substrate, buffer layer, height
Resistance layer, channel layer, barrier layer and cap rock.
As shown in figure 5, being a kind of with antistatic structureGroup-III nitride semiconductor epitaxial structure is in high electron mobility
Application example in rate transistor.It will be high inside resistive formation on the basis of existing high electronic migration rate transmistor epitaxial structure
Electron mobility transistor is divided into front end portion and further part.Nitride semiconductor devices front end portion 100(is hereinGroup-III nitride semiconductor epitaxial structure refers in particular to high electronic migration rate transmistor epitaxial structure) by substrate 101, buffer layer 102
It is formed with the first resistive formation 103,Group-III nitride semiconductor epitaxial structure further part 300(is hereinGroup-III nitride is partly led
Body epitaxial structure refers in particular to high electronic migration rate transmistor epitaxial structure), by the second resistive formation 301, channel layer 302, barrier layer 303
It is formed with cap rock 304.?100 He of nitride semiconductor devices front end portionGroup-III nitride semiconductor epitaxial structure
The wimble structure of falling hexagonal forming layer 201 is added between further part 300 forms the wimble structure of falling hexagonal 500, AlxGa(1-x)N antistatic layer
200 are formed on the wimble structure of falling hexagonal 500, and it is L, Al that the cone cell of falling hexagonal, which cheats 501 surface width across corners,xGa(1-x)N antistatic layer
200 Al component 0.3≤x≤1 in plane 502, with a thickness of h1, AlxGa(1-x)N antistatic layer 200 is cheated in the cone cell of falling hexagonal
Al component 0.3≤x≤1 of 501 side walls, with a thickness of h2, the cone bottom position in the cone cell of falling hexagonal hole 501 is by AlxGa(1-x)N is antistatic
Layer 200 fills and forms a platform, AlxGa(1-x)N antistatic layer 200 is in Al component 0.3≤x≤1 of platform, the width of platform
Degree is L1, wherein 3nm≤h1≤20nm, 5≤h2/h1,150nm≤L≤300nm, 0.5≤L1/L≤0.8.Then it recycles
Hexagonal wimble structure merges layer 202 and fills and leads up the cone cell of falling hexagonal hole 501.In the present embodiment, the formation of the wimble structure of falling hexagonal 500 and
It fills and leads up and has all additionally introduced the wimble structure of falling hexagonal forming layer 201 and the wimble structure of falling hexagonal merging layer 202.And high electron mobility
The resistive formation of transistor is divided into 301 two parts of the first resistive formation 103 and the second resistive formation, and being equivalent to will be in the wimble structure of falling hexagonal
The Al formed on 500xGa(1-x)N antistatic layer 200 is inserted into resistive formation, is formd of the invention a kind of with antistatic
The high electronic migration rate transmistor epitaxial structure of layer.Due to being mentioned above, which can be substantially improved high electricity
The antistatic property of transport factor transmistor epitaxial structure, while being able to ascend its breakdown reverse voltage.
Embodiment 2:
The light emitting diode epitaxial structure of existing group III-nitride sequentially consists of: substrate, buffer layer, N-type layer, preparation
Layer, multiple quantum well layer, P-type electron barrier layer, P-type layer.
As shown in fig. 6, in the light emitting diode for a kind of III nitride semiconductor epitaxial structure with antistatic layer
Application example one.From preparation layer 105 and Multiple-quantum on the basis of the light emitting diode epitaxial structure of existing group III-nitride
Light emitting diode epitaxial structure is divided into front end portion and further part, III nitride semiconductor extension by 305 intersection of well layer
Group III nitride semiconductor device refers in particular to light emitting diode epitaxial structure to structure front end part 100(herein) by substrate 101, slow
It rushes layer 102, N-type layer 104 and preparation layer 105 to form, the wimble structure of falling hexagonal 500 utilizes the preparation layer of light emitting diode epitaxial structure
105 form, AlxGa(1-x)N antistatic layer 200 is formed on the wimble structure of falling hexagonal 500, the table in the cone cell of falling hexagonal hole 501
It is L, Al in face of angular breadthxGa(1-x)Al component 0.3≤x≤1 of the N antistatic layer 200 in plane 502, with a thickness of h1,
AlxGa(1-x)N antistatic layer 200 cheats Al component 0.3≤x≤1 of 501 side walls in the cone cell of falling hexagonal, with a thickness of h2, hexagonal cone
The cone bottom position in shape hole 501 is by AlxGa(1-x)N antistatic layer 200 fills and forms a platform, AlxGa(1-x)N antistatic layer
200 in Al component 0.3≤x≤1 of platform, and the width of platform is L1, in which: 2nm≤h1≤10nm, 5≤h2/h1,150nm≤
L≤200nm, 0.3≤L1/L≤0.5.III nitride semiconductor epitaxial structure further part 300(group III-nitride herein
Semiconductor devices refers in particular to light emitting diode epitaxial structure), by multiple quantum well layer 305, P-type electron barrier layer 306 and P-type layer 307
The wimble structure of falling hexagonal 500 is formed by the cone cell of falling hexagonal hole 501 and filled and led up by composition, P-type layer.
In the present embodiment, it the formation of the wimble structure of falling hexagonal 500 and fills and leads up light emitting diode epitaxial structure is all utilized
Original layer is realized.The Al that will be formed on the wimble structure of falling hexagonal 500xGa(1-x)N antistatic layer 200 is inserted into preparation layer 105
Between multiple quantum well layer 305, it is a kind of with the light emitting diode epitaxial structure for resisting quiet layer to form the present invention.Due to mentioning above
And the reason of, which can be substantially improved the antistatic property of light emitting diode epitaxial structure.
Embodiment 3:
As shown in fig. 7, for a kind of III nitride semiconductor epitaxial structure with antistatic layer answering in the light emitting diode
With example two.It is inserted into the preparation layer position of light emitting diode epitaxial structure by first layer AlxGa(1-x)N antistatic layer 203 and
Two layers of AlxGa(1-x)Two layers of Al that N antistatic layer 205 is constitutedxGa(1-x)N antistatic layer, preparation layer is by two layers of AlxGa(1-x)N resists quiet
Electric layer is divided into three sections.Group III nitride semiconductor device is special herein by III nitride semiconductor epitaxial structure front end portion 100(
Refer to light emitting diode epitaxial structure) by substrate 101, buffer layer 102, N-type layer 104 and first segment preparation layer 106 form, and six
Pyramidal structure 500 is followed successively by first layer using the formation of first segment preparation layer 106 of light emitting diode epitaxial structure later
AlxGa(1-x)N antistatic layer 203, second segment preparation layer 204, second layer AlxGa(1-x)N antistatic layer 205.Group III-nitride half
Group III nitride semiconductor device refers in particular to light emitting diode epitaxial structure to conductor epitaxial structure further part 300(herein), by more
Quantum well layer 305, P-type electron barrier layer 306, P-type layer 307 and third section preparation layer 308 form, and P-type layer 307 will fall hexagonal
Wimble structure 500 is formed by the cone cell of falling hexagonal hole 501 and fills and leads up.
In the present embodiment, it the formation of the wimble structure of falling hexagonal 500 and fills and leads up light emitting diode epitaxial structure is all utilized
Original layer is realized.By two layers of AlxGa(1-x)N antistatic layer is inserted into preparation layer, is formd of the invention a kind of with antistatic
The light emitting diode epitaxial structure of layer.Due to being mentioned above, which can be substantially improved LED epitaxial
The antistatic property of structure.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
Present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: it still may be used
To modify the technical solutions described in the foregoing embodiments or equivalent replacement of some of the technical features；
And these are modified or replaceed, technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution spirit and
Range.
Claims (6)
1. a kind of with antistatic layerGroup-III nitride semiconductor epitaxial structure, includingGroup-III nitride semiconductor epitaxy junction
Structure front end portion andGroup-III nitride semiconductor epitaxial structure further part, it is characterised in that: describedGroup-III nitride is partly led
Prolong structure front end part and described in vitroInserted with Al between group-III nitride semiconductor epitaxial structure further partxGa(1-x)N
Antistatic layer；It is describedContain the wimble structure of falling hexagonal, the knot of falling hexagonal cone in group-III nitride semiconductor epitaxial structure front end portion
It is configured in describedAt threading dislocation line position in group-III nitride semiconductor epitaxial structure front end portion, the knot of falling hexagonal cone
Structure is made of plane and the cone cell of the falling hexagonal hole inlayed planar, threading dislocation line and the cone cell of falling hexagonal hole cone vertex (vertices) end phase
It hands over；The AlxGa(1-x)N antistatic layer is formed on the wimble structure of falling hexagonal and fills the cone cell of the falling hexagonal hole cone bottom
Form a platform；The III nitride semiconductor epitaxial structure further part is located at the AlxGa(1-x)N antistatic layer it
Above and by the cone cell of the falling hexagonal hole that the wimble structure of falling hexagonal is formed fill and lead up；The AlxGa(1-x)N antistatic layer is in hexagonal cone
Plane, the cone cell of falling hexagonal hole side wall and the cone cell of the falling hexagonal hole cone bottom position of structure have different thickness；The hexagonal
It is L, the Al that cone cell, which cheats surface width across corners,xGa(1-x)Al component 0.3 of the N antistatic layer in the structural plan of falling hexagonal cone
≤ x≤1, with a thickness of h1, the AlxGa(1-x)N antistatic layer cheats Al component 0.3≤x≤1 of side wall in the cone cell of falling hexagonal,
With a thickness of h2, the AlxGa(1-x)N antistatic layer cheats Al component 0.3≤x≤1 at cone bottom in the cone cell of falling hexagonal, and width is
L1, wherein 2≤h2/h1,50nm≤L≤500nm, 0.1≤L1/L≤0.8.
2. according to claim 1 with antistatic layerGroup-III nitride semiconductor epitaxial structure, it is characterised in that:
The wimble structure of falling hexagonal can also be formed by adding the one layer of wimble structure of falling hexagonal forming layer；The wimble structure of falling hexagonal is formed
The cone cell of falling hexagonal hole can also be filled and led up by adding one layer of wimble structure of falling hexagonal merging layer.
3. according to claim 1 or 2 with antistatic layerGroup-III nitride semiconductor epitaxial structure, feature exist
In: the AlxGa(1-x)N antistatic layer cheats side wall and the cone cell of falling hexagonal hole in the plane for the wimble structure of falling hexagonal, the cone cell of falling hexagonal
Boring bottom position has different Al components, and AlxGa(1-x)N antistatic layer cheats the Al group of cone bottom position filling in the cone cell of falling hexagonal
Divide and is higher than AlxGa(1-x)Al component of the N antistatic layer in the plane for the wimble structure of falling hexagonal and the cone cell of falling hexagonal hole side wall.
4. according to claim 1 or 2 with antistatic layerGroup-III nitride semiconductor epitaxial structure, feature exist
In: it is describedGroup-III nitride semiconductor epitaxial structure isLight emitting diode epitaxial structure, the laser diode of group-III nitride
Epitaxial structure, photodetector epitaxial structure, high electronic migration rate transmistor epitaxial structure, field effect transistor epitaxial structure or
One of microwave device epitaxial structure.
5. according to claim 1 or 2 with antistatic layerGroup-III nitride semiconductor epitaxial structure, feature exist
In: the plane of the wimble structure of falling hexagonal is(0001) face of group nitride material system, six cones in the cone cell of falling hexagonal hole
Face isSix faces of group nitride material system { 10-11 } face race；The cone cell of falling hexagonal hole is flat in the wimble structure of falling hexagonal
Distribution density on face is ρ, falls the number of hexagonal cone as on unit area, ρ withIn group-III nitride semiconductor epitaxial structure
Penetration dislocation density it is of substantially equal, 1 × 106 cm-2≤ρ≤1×1010 cm-2。
6. according to claim 1 or 2 with antistatic layerGroup-III nitride semiconductor epitaxial structure, feature exist
In: it is described with antistatic layerGroup-III nitride semiconductor epitaxial structure can include one layer of the above wimble structure of falling hexagonal
With the AlxGa(1-x)N antistatic layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910433150.4A CN110246831B (en) | 2019-05-23 | 2019-05-23 | III-nitride semiconductor epitaxial structure with antistatic layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910433150.4A CN110246831B (en) | 2019-05-23 | 2019-05-23 | III-nitride semiconductor epitaxial structure with antistatic layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110246831A true CN110246831A (en) | 2019-09-17 |
| CN110246831B CN110246831B (en) | 2024-06-14 |
Family
ID=67884875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910433150.4A Active CN110246831B (en) | 2019-05-23 | 2019-05-23 | III-nitride semiconductor epitaxial structure with antistatic layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110246831B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111863959A (en) * | 2020-06-09 | 2020-10-30 | 江苏大学 | Vertical-structure high-electron-mobility transistor structure and manufacturing method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040169192A1 (en) * | 2001-06-04 | 2004-09-02 | Hisaki Kato | Method for producing group III nitride compounds semiconductor |
| CN1633700A (en) * | 2000-03-31 | 2005-06-29 | 丰田合成株式会社 | Method for fabricating group iii nitride compound semiconductors and group iii nitride compound semiconductor devices |
| CN104576712A (en) * | 2013-10-28 | 2015-04-29 | 首尔伟傲世有限公司 | Semiconductor device and method of manufacturing the same |
| US20170373218A1 (en) * | 2016-06-23 | 2017-12-28 | Toyoda Gosei Co., Ltd. | Method for producing group iii nitride semiconductor light-emitting device |
| CN210092074U (en) * | 2019-05-23 | 2020-02-18 | 南昌大学 | III-nitride semiconductor epitaxial structure with antistatic layer |
-
2019
- 2019-05-23 CN CN201910433150.4A patent/CN110246831B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1633700A (en) * | 2000-03-31 | 2005-06-29 | 丰田合成株式会社 | Method for fabricating group iii nitride compound semiconductors and group iii nitride compound semiconductor devices |
| US20040169192A1 (en) * | 2001-06-04 | 2004-09-02 | Hisaki Kato | Method for producing group III nitride compounds semiconductor |
| CN104576712A (en) * | 2013-10-28 | 2015-04-29 | 首尔伟傲世有限公司 | Semiconductor device and method of manufacturing the same |
| US20170373218A1 (en) * | 2016-06-23 | 2017-12-28 | Toyoda Gosei Co., Ltd. | Method for producing group iii nitride semiconductor light-emitting device |
| CN210092074U (en) * | 2019-05-23 | 2020-02-18 | 南昌大学 | III-nitride semiconductor epitaxial structure with antistatic layer |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111863959A (en) * | 2020-06-09 | 2020-10-30 | 江苏大学 | Vertical-structure high-electron-mobility transistor structure and manufacturing method thereof |
| CN111863959B (en) * | 2020-06-09 | 2024-05-14 | 江苏大学 | Vertical structure high electron mobility transistor structure and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110246831B (en) | 2024-06-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8525230B2 (en) | Field-effect transistor with compositionally graded nitride layer on a silicaon substrate | |
| US6621148B2 (en) | Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby | |
| CN102687291B (en) | Optoelectronic semiconductor chip and the method for the manufacture of optoelectronic semiconductor chip | |
| Davis et al. | Gallium nitride and related materials: challenges in materials processing | |
| CN105355738B (en) | A kind of LED epitaxial slice structure and preparation method | |
| CN104685644B (en) | Opto-electronic device and the method for its manufacture | |
| Jang et al. | High-quality GaN/Si (1 1 1) epitaxial layers grown with various Al0. 3Ga0. 7N/GaN superlattices as intermediate layer by MOCVD | |
| Rojo et al. | Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystals | |
| KR100865600B1 (en) | Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby | |
| KR102054094B1 (en) | Template, nitride semiconductor ultraviolet light emitting device and method of manufacturing the template | |
| CN104518062A (en) | Method of manufacturing semiconductor light emitting device | |
| CN105122473A (en) | Optoelectronic semiconductor chip and method for the production thereof | |
| CN110246831A (en) | A kind of III nitride semiconductor epitaxial structure with antistatic layer | |
| CN210092074U (en) | III-nitride semiconductor epitaxial structure with antistatic layer | |
| CN101483212B (en) | Group III nitride compound semiconductor LED and method for manufacturing the same | |
| CN102881570A (en) | Method for manufacturing semiconductor material | |
| KR101972045B1 (en) | Heterostructure semiconductor device | |
| Voronenkov et al. | Thick GaN films grown on patterned sapphire substrates | |
| CN108550674A (en) | A kind of light emitting diode and preparation method thereof enhancing hole injection | |
| CN206774502U (en) | Semiconductor devices containing silicon doped aluminum nitride layer | |
| CN107302043A (en) | A kind of light emitting diode with SQW protective layer and preparation method thereof | |
| US9159788B2 (en) | Nitride semiconductor structure | |
| CN105489725A (en) | LED chip structure and manufacturing method thereof | |
| CN206516634U (en) | The semiconductor devices of cache layer containing nitrogen gallium aluminium and nitrogen gallium indium | |
| CN112018199A (en) | High-quality nonpolar AlGaN micro-nano composite structure and processing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant |