CN110243889B - Based on CsPbBr3Molecular imprinting photoelectrochemical sensor with/GO (graphene oxide) homotype heterostructure as well as preparation method and application thereof - Google Patents
Based on CsPbBr3Molecular imprinting photoelectrochemical sensor with/GO (graphene oxide) homotype heterostructure as well as preparation method and application thereof Download PDFInfo
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Abstract
The invention discloses a perovskite quantum dot (CsPbBr) -based quantum dot3) Preparation of molecular imprinting sensor with Graphene Oxide (GO) homotype heterostructure and application of molecular imprinting sensor in aflatoxin B1(AFB1) Detection of (3). The invention uses CsPbBr3A homotype heterostructure is constructed in folds wrapped or loaded in graphene oxide, polymethyl methacrylate (PMMA) is used as a hydrophobic layer, and a molecular imprinting technology is combined to successfully prepare the molecular imprinting photoelectric chemical sensor. The sensor prepared by the invention uses CsPbBr3The homotype heterojunction formed by GO is used as a photoelectric conversion layer, polymethyl methacrylate is used as a protective layer, and AFB is realized by modifying the surface of a molecular imprinting film containing toxin recognition sites1Detection of (3). The sensor has the advantages of wide detection range, good selectivity, high sensitivity and detection limit as high as 0.74 pg/mL‑1(ii) a Meanwhile, the response is stable, and the reproducibility is good.
Description
Technical Field
The invention relates to the technical field of photoelectrochemical analysis, environmental monitoring and sensing, in particular to a molecular imprinting photoelectrochemical sensor based on perovskite quantum dots and a graphene oxide homotype heterostructure, and especially relates to a molecular imprinting photoelectrochemical sensor based on CsPbBr3Molecular imprinting photoelectrochemistry of/GO homotype heterostructureSensor and preparation method thereof and application of sensor in aflatoxin B1(AFB1) Application in detection.
Background
Inorganic CsPbX3The (X ═ I, Br, Cl) Perovskite Quantum Dots (PQDs) have the characteristics of high photoluminescence quantum yield, narrow half-peak width, adjustable broad emission spectrum, short radiative lifetime and the like, so that they can be used as a novel photoelectric material in the fields of light emitting diodes, lasers, photoelectric detection and backlight display, solar cells and the like. However, since the perovskite quantum dots cannot exist stably in water, the practical application range thereof is greatly limited. In order to improve the water stability of the perovskite quantum dot, an organic ligand, an organic polymer, silica, alumina, or the like is coated on the surface of the quantum dot as a protective layer to improve the water stability of the quantum dot. Although the coating of the material can effectively improve the luminescence stability of the perovskite quantum dot in water, the requirement of practical application of photoelectric devices cannot be met. Therefore, how to improve the water stability of the perovskite quantum dots to meet the practical application requirements of photoelectric devices remains a hot spot and a frontier in the field of perovskite research.
Aflatoxin B1(Aflatoxin B1Or AFB1) Is a substance with strong carcinogenicity and mutagenicity, belongs to one of aflatoxins, poses great threat to human health, and is used for AFB in food1The contents are all subject to strict limit standards, therefore, for AFB1Rapid and accurate detection of toxins is urgently needed. Compared with the traditional detection method, the photoelectrochemical detection has the outstanding advantages of low background and high selectivity, low cost, simple instrument operation and portability, so that the Photoelectrochemical (PEC) analysis technology has great potential in chemical and biological analysis.
The present application has been made for the above reasons.
Disclosure of Invention
Aiming at the problems or defects in the prior art, the invention aims to provide a CsPbBr-based material3A molecular imprinting photoelectrochemical sensor with a/GO (graphene oxide) homotype heterostructure and a preparation method and application thereof. Firstly, CsPbBr is added3Wrapping or loading in the folds of graphene oxide to obtain CsPbBr3the/GO composite material is prepared, and then CsPbBr is constructed on the surface of a working electrode3And a/GO (graphene oxide) homotype heterostructure, a hydrophobic material is adopted as a protective layer, and finally a molecular imprinting technology is combined to successfully prepare a molecular imprinting photoelectrochemical (MIP-PEC) sensor with a homotype heterostructure. The sensor prepared by the invention can be used for AFB1High selectivity and high sensitivity detection of toxin analysis.
In order to achieve the above purpose of the present invention, the technical solution adopted by the present invention is as follows:
CsPbBr-based3The molecular imprinting photoelectrochemical sensor with the/GO homotype heterostructure comprises a working electrode, CsPbBr and a plurality of layers of materials from bottom to top, wherein the working electrode and the CsPbBr are sequentially stacked3a/GO homotype heterogeneous structure layer, a hydrophobic layer and a molecularly imprinted polymer film layer.
Further, in the above technical solution, the working electrode is preferably an ITO conductive glass electrode.
Further, in the above technical solution, the hydrophobic layer material is preferably polymethyl methacrylate (PMMA).
The second purpose of the invention is to provide the CsPbBr-based material3A preparation method of a molecular imprinting photoelectrochemical sensor with a/GO (graphene oxide) homotype heterostructure comprises the following steps:
firstly, CsPbBr3Coating the/GO composite material on the surface of the pretreated working electrode to form CsPbBr3Drying the/GO homo-heterostructure photoelectric conversion layer; then coating a hydrophobic layer material on the surface of the photoelectric conversion layer to form a hydrophobic layer, and drying; will then contain AFB1Coating the molecularly imprinted polymer solution of the toxin on the surface of the hydrophobic layer, obtaining a molecularly imprinted polymer film through photopolymerization, and eluting template molecules by using an organic solvent to obtain the CsPbBr-based molecular imprinting polymer membrane3A molecular imprinting photoelectrochemical sensor with a/GO homotype heterostructure.
Further, in the above technical solution, the pretreatment process of the working electrode specifically includes: and ultrasonically washing the surface of the electrode by using acetone, ethanol and ultrapure water in sequence, and drying.
Further, in the technical scheme, the molecularly imprinted polymer solution is prepared from AFB1The template molecule, a functional monomer methacrylic acid (MAA), an ethylene glycol dimethacrylate (EDMA) cross-linking agent and an Azodiisobutyronitrile (AIBN) initiator.
Preferably, in the technical scheme, the molar ratio of the methacrylic acid to the ethylene glycol dimethacrylate to the azobisisobutyronitrile is 8:3: 1; the volume ratio of the mixed solution obtained by mixing the methacrylic acid, the ethylene glycol dimethacrylate and the azobisisobutyronitrile to the molecularly imprinted polymer solution is 1: 3.
preferably, in the technical scheme, the photopolymerization time is 10-20 min, and more preferably 15 min; the elution time of the template is 2-5 min.
Further, in the technical scheme, the CsPbBr3the/GO composite material is prepared by the following method, comprising the following steps:
(a) preparation of CsOA: uniformly mixing cesium carbonate, 1-octadecene and oleic acid according to a ratio, vacuumizing for 0.5-1 h at 115-125 ℃, then raising the reaction temperature to 145-155 ℃ in an inert atmosphere to form an optically transparent solution, continuously refluxing at a constant temperature for 0.5-1 h, and cooling the obtained solution to room temperature to obtain a CsOA solution;
(b)CsPbBr3the preparation of (1): uniformly mixing 1-octadecene, oleylamine, oleic acid and lead bromide according to a ratio, and vacuumizing for 0.5-1 h at the temperature of 115-125 ℃; then raising the temperature to 175-185 ℃ in an inert atmosphere to completely dissolve lead bromide to obtain a mixed solution; then, injecting the CsOA solution prepared in the step (a) into the mixed solution for constant temperature reaction for 3-10 s; after the reaction is finished, cooling to room temperature, washing and centrifuging to obtain CsPbBr3Perovskite quantum dots, and finally reacting CsPbBr with organic solvent3The perovskite quantum dots are dissolved to prepare CsPbBr with proper concentration3A solution; wherein: the molar ratio of the CsOA to the lead bromide is 1: 2-5;
(c)CsPbBr3preparation of/GO: slowly adding graphene oxide into the CsPbBr prepared in the step (2) under the ultrasonic condition3Solutions ofIn the reaction solution, uniformly mixing to obtain CsPbBr3a/GO composite; wherein: the graphene oxide and CsPbBr3The mass ratio of (1): 2 to 10.
Preferably, in the above technical scheme, the dosage ratio of cesium carbonate, 1-octadecene and oleic acid in step (a) is (5-15) mmol: (10-30) mL: (10-30) mL. More preferably, the cesium carbonate, 1-octadecene and oleic acid are used in a ratio of 10 mmol: 20mL of: 20 mL.
Preferably, in the above technical solution, the concentration of the CsOA solution in the step (a) is 0.1-1.0M, and more preferably 0.5M.
Preferably, in the above technical scheme, the volume ratio of the 1-octadecene, oleylamine and oleic acid in the step (b) is (3-5): 1, more preferably 4: 1. the dosage ratio of the lead bromide to the 1-octadecene is (1-3) mmol: 20 mL; more preferably 2 mmol: 20 mL.
Preferably, in the above technical solution, the molar ratio of CsOA to lead bromide in step (b) is 1: 4.
preferably, in the above technical solution, the CsPbBr in the step (b)3The concentration of the solution is 5-15 mg/mL, preferably 10 mg/mL.
Preferably, in the above technical solution, the organic solvent in step (b) may be any one of N-hexane, N-pentane, cyclopentane, toluene, acetone, N-Dimethylformamide (DMF), dimethyl sulfoxide (DMSO), or the like, and N-hexane is preferred for obtaining a better dissolution effect.
Preferably, in the above technical solution, the graphene oxide and CsPbBr in step (c)3The mass ratio of (1): 5.
preferably, in the above technical solution, the step (c) of preparing the graphene oxide preferably employs freeze-drying an aqueous solution of graphene oxide to obtain a dried graphene oxide powder; the concentration of the graphene oxide solution is 1-5 mg/mL.
The third purpose of the invention is to provide the CsPbBr-based material3Application of molecular imprinting photoelectrochemical sensor with/GO (graphene oxide) homotype heterostructure in AFB (atomic fluorescence resonance)1And (4) analyzing and detecting the toxin.
The invention further provides the aboveBased on CsPbBr3Molecular imprinting photoelectrochemical sensor with/GO (graphene oxide) homotype heterostructure for AFB (atomic fluorescence resonance)1A method for the use of an assay for the detection of a toxin, said method comprising the steps of:
(i) immersing the molecularly imprinted photoelectrochemical sensor into a liquid containing AFB1Incubating for 15-25 min;
(ii) after the incubation is finished, detecting an electric signal of the molecular imprinting photoelectric chemical sensor: and (3) putting the sensor into a solution containing Ascorbic Acid (AA) to perform current-time scanning to obtain the change condition of a current signal.
Preferably, the incubation time in step (i) of the above technical scheme is 20 min.
Preferably, the concentration of the ascorbic acid in the step (ii) of the technical scheme is 25-35 nM, preferably 30 nM.
Compared with the prior art, the invention has the following beneficial effects:
(1) the invention synthesizes the novel CsPbBr3The optical, electrical and photoelectrochemical properties of the perovskite quantum dots are researched.
(2) The CsPbBr is formed in an organic phase through wrapping and loading3the/GO homotype heterojunction compound can improve the photoelectric conversion efficiency of the prepared sensor.
(3) Hydrophobic interaction of CsPbBr with PMMA3And carrying out waterproof protection on the/GO homotype heterojunction.
(4) According to the invention, by combining the molecular imprinting technology with the photoelectrochemistry analysis method, not only is the selectivity of the sensor improved, but also the purpose of enriching the analyte is achieved.
(5) The invention adopts lower bias voltage of 0.2V in the detection process, effectively avoids the oxidation of the blotting membrane, is beneficial to keeping the stability of the sensor and signals, and realizes the reutilization of the sensor through elution and culture.
(6) The photoelectrochemistry analysis method realizes the AFB pair1The adopted instrument is cheap and portable, the preparation method of the sensor is simple and easy to implement, the signal response is quick, the sensitivity is higher, and the detection limit is as low as 0.74 pg.mL-1。
(7) The photoelectrochemistry analysis method can be used for detecting actual samples, provides a design thought and a preparation method of the molecular imprinting chemical sensor, provides technical support for developing sensors of similar types for identifying other target analytes and has good application prospect.
Drawings
FIG. 1 shows the CsPbBr-based preparation of the present invention3Process of molecular imprinting photoelectrochemical sensor with/GO (graphene oxide) homotype heterostructure and application of molecular imprinting photoelectrochemical sensor in AFB (atomic fluorescence spectroscopy) detection1A process schematic of (a); wherein: MIP represents a molecularly imprinted polymer solution.
In FIG. 2, (A), (B), (C) are CsPbBr prepared in example 1 of the present invention, respectively3Ultraviolet/visible absorption spectrum (band gap energy spectrogram is an inset), fluorescence emission spectrum and transmission electron microscope image of the quantum dot; FIG. 2 (D) shows CsPbBr prepared in example 1 of the present invention3Scanning electron microscopy of/GO heterostructure.
FIG. 3 is a diagram of a pair of molecularly imprinted photoelectric chemical sensors AFB in example 3 of the present invention1A specific detection result map of (1); wherein the analyte AFB1The concentration of (2) was 1ng/mL, and the concentration of other substances was 10 ng/mL.
FIG. 4 shows an embodiment of the present invention 4 with a sensor detecting AFB1A graph of the reproducibility and stability test results of; wherein the analyte AFB1Are respectively 0.001,0.01,0.1,1,10,100 and 1000ng/mL。
FIG. 5 is a diagram of an embodiment 5 of the present invention for detecting AFB by a sensor1A photocurrent response graph and a corresponding linear graph of; wherein AFB1The concentrations a to h of (a) are 0,0.001,0.01,0.1,1,10,100,1000ng, respectively/mL。
Detailed Description
The invention is further described below with reference to the following figures and specific examples. It should be understood that the following examples are illustrative only and are not intended to limit the scope of the present invention. Various reagents, reaction conditions, detection methods, and the like used in the following examples are regarded as reagents, reaction conditions, and detection methods conventionally used in the art unless otherwise specified.
Since the perovskite quantum dots cannot exist stably in water and cannot be combined with other nano materials, the perovskite quantum dots and other materials are combined to be used very significantly. Although the perovskite quantum dots cannot exist stably in water, other nano materials can be dissolved or dispersed by an organic solvent, so that the perovskite quantum dots and other nano materials are combined in an organic phase. Based on this, this patent provides perovskite quantum dots and Graphene Oxide (GO) homotype heterostructures (CsPbBr)3GO) and utilizes hydrophobic effect of polymethyl methacrylate (PMMA) to prepare homotype heterostructure molecular imprinting photoelectrochemical (MIP-PEC) sensor for high selectivity and high sensitivity analysis and detection of AFB1 toxin.
Example 1CsPbBr3And CsPbBr3The preparation process of/GO is as follows:
CsPbBr used in the present invention3Reference is made to Li Zhichun et al (high luminescence and Ultrastable CsPbBr)3The method reported in Perovskite quant Dots Incorporated into a Silica/Alumina Monolith, Li Zhichun et al, Angewandte chemical International Edition,2017,129, 8246-8250) was slightly modified. First, 10mmol of cesium carbonate, 20mL of 1-octadecene and 20mL of oleic acid were added to a round-bottom flask, vacuum was applied at 120 ℃ for 05 to 1 hour, then the reaction temperature was raised to 150 ℃ under argon gas flow to form an optically transparent solution, and the solution was cooled after refluxing for 0.5 to 1 hour to obtain a precursor CsOA. Then 20mL of 1-octadecene, 5mL of oleylamine, 5mL of oleic acid and 2mmol of lead bromide are added into a three-necked flask, and vacuum pumping is carried out at 120 ℃ for 0.5 to 1 hour; then raising the reaction temperature to 180 ℃ under argon gas flow until the lead bromide is completely dissolved; next, 1mL of 0.5M preheated CsOA precursor was injected into the prepared solution. After 5 seconds, the three-necked flask was placed in an ice-water bath and cooled to room temperature, washed with toluene and centrifuged to obtain CsPbBr3Perovskite quantum dots, and preparing 10mg/mL CsPbBr by using n-hexane3And (3) solution. Finally, slowly adding 2mg of graphene oxide into 1mL of CsPbBr of 10mg/mL under the ultrasonic condition3Solution feedingUniformly mixing to obtain CsPbBr3GO and CsPbBr3And CsPbBr3the/GO properties and morphology are shown in FIG. 2. Wherein: FIG. 2A shows CsPbBr3The perovskite quantum dots have good ultraviolet absorption and narrow band gaps; 2B indicates CsPbBr3The fluorescence emission peak of the perovskite quantum dot is 513 nm; CsPbBr can be seen by a transmission electron microscope of 2C3The perovskite quantum dots are in a square shape; 2D display CsPbBr3Successful preparation of/GO, CsPbBr3The perovskite quantum dots are clamped in the folds of the graphene oxide.
Example 2 preparation of a molecularly imprinted photoelectrochemical sensor, the procedure was as follows:
the Molecularly imprinted polymer membrane used in the present invention is described in Mao Lebao et al (molecular imprinted photonic sensor for fumonisin B)1based on GO-CdS heterojunction, Mao Lebao et al, biosens.Bioelectron.2019, 127, 57-63). First, 20. mu.L of CsPbBr prepared in example 1 was taken3the/GO solution is dripped on a clean conductive glass (ITO) electrode and is placed in the air for drying; and then dropping 20 mu L of PMMA, and drying in the air to obtain the modified electrode. Then, 20 mu L of AFB with the original concentration of 20mg/ml is dripped on the modified electrode1Template molecule, functional monomer methacrylic acid (MAA), crosslinking agent of ethylene glycol dimethacrylate (EDMA) and polymerization liquid of initiator Azobisisobutyronitrile (AIBN), wherein AFB1The volume ratio of the template molecule to the functional monomers methacrylic acid (MAA), ethylene glycol dimethacrylate (EDMA) and Azodiisobutyronitrile (AIBN) as the initiator (the molar ratio of the MAA, the EDMA and the AIBN is 8:3:1) is 2: 1. Irradiating with ultraviolet light for 15min to obtain molecularly imprinted polymer film, eluting in ethanol solution with pH of 10 for 2.5min to remove template molecules, and obtaining CsPbBr-based molecularly imprinted polymer film3A molecular imprinting photoelectrochemical sensor with a/GO homotype heterostructure.
Example 3 molecularly imprinted photoelectrochemical sensor pair AFB1The detection process comprises the following steps:
the rice extract of the sensor prepared in example 2 is added with various toxins, such asFumonisin B1(FB1), Deoxynivalenol(DON),Ochratoxin A(OTA),Ochratoxin B(OTB),Patulin(PAT), Zearalenone(ZON),Patulin(PAT)and Aflatoxin B1(AFB1) And comprises an AFB1Incubation with a mixture of all the above toxins together resulted in a concentration of 10ng interfering substance as shown in FIG. 3/mL,AFB1The concentration is 1ng/mL, it can be seen that interferents have no effect on the signal acquisition of the sensor, while AFB is being added1After that, the current is changed significantly and is consistent with the sensor signal of the mixture culture, and the result shows that the sensor pair AFB1Has good selectivity.
Example 4 molecularly imprinted photoelectrochemical sensor pairs AFB1The reproducibility of the detection is as follows
Using the method of example 2 to prepare sensors, the molecularly imprinted sensors were prepared on five different electrodes to obtain five sensors, which were then analyzed with different concentrations of AFB1(wherein the analyte AFB1Are respectively 0.001,0.01,0.1,1,10,100 and 1000ng/mL) and then signal detection. As shown in fig. 4, it was found that the sensors prepared from different root electrodes had comparable signal responses, indicating that the method of preparing the sensors had good stability and reproducibility.
Example 5 sensor pairs AFB1Detection of sensitivity of
CsPbBr-based material obtained in example 23Molecular imprinting photoelectrochemical sensor of/GO homotype heterojunction for AFB with different concentrations1And (5) carrying out sensitivity detection. As shown in fig. 5, AFB1The concentration of (a) to (h) is 0,0.001,0.01,0.1,1,10,100,1000ng in sequence/mL, photocurrent response with AFB1The concentration increases and decreases, and the corresponding linear relationship is that the delta I is 54.16log (c, ng)/mL) +211.80 with detection limits as low as 0.74pg/mL。
In summary, the CsPbBr-based design of the present embodiment3The molecular imprinting photoelectrochemical sensor of the GO homotype heterojunction has the advantage of good selectivity and stronger anti-interference capability to other related substances,most importantly, it can be used to detect AFB in food quickly and easily1. Therefore, the design idea and the preparation method provided by the invention can provide great help for designing and developing the molecular imprinting photoelectrochemical sensor based on the heterostructure for identifying other target analytes.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are given by way of illustration of the principles of the present invention, and that various changes and modifications may be made without departing from the spirit and scope of the invention as defined by the appended claims. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (7)
1. CsPbBr-based3The molecular imprinting photoelectrochemical sensor of the/GO homotype heterostructure is characterized in that:
the sensor comprises a working electrode, CsPbBr and a plurality of electrodes from bottom to top which are sequentially stacked3a/GO homotype heterogeneous structure layer, a hydrophobic layer and a molecularly imprinted polymer film layer; wherein: the CsPbBr3the/GO homotypic heterostructure layer is formed by CsPbBr3Coating the/GO composite material on the surface of the pretreated working electrode to form the composite material; the CsPbBr3the/GO composite material is prepared by the following method, comprising the following steps:
(a) preparation of CsOA: uniformly mixing cesium carbonate, 1-octadecene and oleic acid according to a ratio, vacuumizing for 0.5-1 h at 115-125 ℃, then raising the reaction temperature to 145-155 ℃ in an inert atmosphere to form an optically transparent solution, continuously refluxing at a constant temperature for 0.5-1 h, and cooling the obtained solution to room temperature to obtain a CsOA solution; the dosage ratio of the cesium carbonate to the 1-octadecene to the oleic acid is (5-15) mmol: (10-30) mL: (10-30) mL; the concentration of the CsOA solution is 0.1-1.0M;
(b)CsPbBr3the preparation of (1): uniformly mixing 1-octadecene, oleylamine, oleic acid and lead bromide according to a ratio, and vacuumizing for 0.5-1 h at the temperature of 115-125 ℃; then at inertiaRaising the temperature to 175-185 ℃ in the atmosphere to completely dissolve lead bromide to obtain a mixed solution; injecting the CsOA solution prepared in the step (a) into the mixed solution for constant temperature reaction for 3-10 s; after the reaction is finished, cooling to room temperature, washing and centrifuging to obtain CsPbBr3Perovskite quantum dots, and finally reacting CsPbBr with organic solvent3The perovskite quantum dots are dissolved to prepare CsPbBr with proper concentration3A solution; wherein: the molar ratio of the CsOA to the lead bromide is 1: 2-5; the volume ratio of the 1-octadecene to the oleylamine to the oleic acid is (3-5): 1; the dosage ratio of the lead bromide to the 1-octadecene is (1-3) mmol: 20 mL; the CsPbBr3The concentration of the solution is 5-15 mg/mL;
(c)CsPbBr3preparation of/GO: slowly adding graphene oxide into the CsPbBr prepared in the step (2) under the ultrasonic condition3In the solution, the CsPbBr is obtained by uniform mixing3a/GO composite; wherein: the graphene oxide and CsPbBr3The mass ratio of (1): 2 to 10.
2. The CsPbBr-based according to claim 13The molecular imprinting photoelectrochemical sensor of the/GO homotype heterostructure is characterized in that: the hydrophobic layer material adopts polymethyl methacrylate.
3. The CsPbBr-based cell of claim 1 or 23The preparation method of the molecular imprinting photoelectrochemical sensor with the/GO homo-type heterostructure is characterized by comprising the following steps of: the method comprises the following steps:
firstly, CsPbBr3Coating the/GO composite material on the surface of the pretreated working electrode to form CsPbBr3Drying the/GO homo-heterostructure photoelectric conversion layer; then coating a hydrophobic layer material on the surface of the photoelectric conversion layer to form a hydrophobic layer, and drying; will then contain AFB1Coating the molecularly imprinted polymer solution of toxin on the surface of the hydrophobic layer, obtaining a molecularly imprinted polymer film through photopolymerization, and eluting template molecules by using an organic solvent to obtain the CsPbBr-based molecularly imprinted polymer film3Molecular imprinting photoelectrochemical sensing of/GO homotype heterostructureA device.
4. The CsPbBr-based according to claim 33The preparation method of the molecular imprinting photoelectrochemical sensor with the/GO homo-type heterostructure is characterized by comprising the following steps of: the molecular imprinting polymerization solution is prepared from AFB1Template molecules, functional monomers of methacrylic acid, ethylene glycol dimethacrylate cross-linking agent and azodiisobutyronitrile initiator.
5. The CsPbBr-based cell of claim 1 or 23The application of the molecular imprinting photoelectrochemical sensor of the/GO homo-type heterostructure is characterized in that: used for AFB1 toxin analysis detection.
6. The CsPbBr-based according to claim 53The application of the molecular imprinting photoelectrochemical sensor of the/GO homo-type heterostructure is characterized in that: the application steps are as follows:
(i) immersing the molecularly imprinted photoelectrochemical sensor into a liquid containing AFB1Incubating for 15-25 min;
(ii) after the incubation is finished, detecting an electric signal of the molecular imprinting photoelectric chemical sensor: and (3) putting the sensor into a solution containing Ascorbic Acid (AA) to perform current-time scanning to obtain the change condition of a current signal.
7. The CsPbBr-based according to claim 63The application of the molecular imprinting photoelectrochemical sensor of the/GO homo-type heterostructure is characterized in that: the concentration of the ascorbic acid in the step (ii) is 25-35 nM.
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