CN110233323A - For bearing the 3dB Lange coupler and preparation method of 1000W - Google Patents
For bearing the 3dB Lange coupler and preparation method of 1000W Download PDFInfo
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- CN110233323A CN110233323A CN201910150536.4A CN201910150536A CN110233323A CN 110233323 A CN110233323 A CN 110233323A CN 201910150536 A CN201910150536 A CN 201910150536A CN 110233323 A CN110233323 A CN 110233323A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 27
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 20
- 230000008878 coupling Effects 0.000 claims abstract description 18
- 238000010168 coupling process Methods 0.000 claims abstract description 18
- 238000005859 coupling reaction Methods 0.000 claims abstract description 18
- 239000010931 gold Substances 0.000 claims abstract description 13
- 229910052737 gold Inorganic materials 0.000 claims abstract description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 12
- 239000000919 ceramic Substances 0.000 claims description 12
- 229910052593 corundum Inorganic materials 0.000 claims description 12
- 208000029278 non-syndromic brachydactyly of fingers Diseases 0.000 claims description 12
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 230000008901 benefit Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000010923 batch production Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
- H01P5/18—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers
- H01P5/184—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers the guides being strip lines or microstrips
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
The present invention provides a kind of for bearing the 3dB Lange coupler and preparation method of 1000W, including substrate, the substrate is equipped with input port, coupling port, straight-through port, isolated port, multiple bonding gold wires for connecting finger-like microstrip line between ports and being connected between finger-like microstrip line, and the length L1 between the outside of the isolated port and the outside of the input port is 8.634mm；Width W1 between the outside of the input port and the outside of the coupling port is 2.518mm；The height H of the substrate is 1mm；The width W3 of the finger-like microstrip line is 0.100mm；The spacing W4 of adjacent finger-like microstrip line is 0.084mm.It is small in size provided by the present invention for bearing the 3dB Lange coupler of 1000W, the 1000W input power of wide pulse width 3ms, big space rate 30% can be born.
Description
Technical field
The invention belongs to microwave technical fields, more specifically, be related to it is a kind of for bearing the 3dB Lange of 1000W
Coupler and preparation method.
Background technique
Coupler is usually used in the input network of microwave power synthesis and absorption limiter, is subjected to larger input power.
3dB Lange coupler is designed due to using microstrip line interdigital, has the characteristics that small in size, bandwidth, consistency are good
It is used widely.But simultaneously because being limited by volume size, the interdigital width of microstrip line and spacing can not be too wide, cause
It bears power and is limited to, the input power of unbearable kilowatt of magnitude.
Summary of the invention
The purpose of the present invention is to provide a kind of for bearing the 3dB Lange coupler of 1000W, to solve the prior art
Present in volume size limited the technical issues of leading to not to bear kilowatt magnitude input power.
To achieve the above object, the technical solution adopted by the present invention is that: provide a kind of for bearing the 3dB of 1000W
Lange coupler, including substrate, the substrate are equipped with input port, coupling port, straight-through port, isolated port, Duo Gelian
The bonding gold wire for connecing finger-like microstrip line between ports and being connected between finger-like microstrip line, the isolated port it is outer
Length L1 between side and the outside of the input port is 8.634mm；
Width W1 between the outside of the input port and the outside of the coupling port is 2.518mm；
The height H of the substrate is 1mm；
The width W3 of the finger-like microstrip line is 0.100mm；
The spacing W4 of adjacent finger-like microstrip line is 0.084mm.
Further, multiple finger-like microstrip lines specifically include:
First short finger line, one end is connect with the inside of the input port；
Second length refers to line, and one end is connect with the inside of the isolated port；
Third length refers to line, and both ends are separately connected the straight-through port and the input port；
4th length refers to line, and one end is connect with the coupling port；
5th short finger line, one end are connect with the straight-through port；
The described first short length L4 for referring to line and the 5th short finger line is 3.692mm；
The long length L3 for referring to line of the third is 7.384mm；
The described second long end for referring to line is 0.084mm away from the distance L5 on the inside of the input port；
The described 4th long end for referring to line is 0.084mm away from the distance L5 on the inside of the straight-through port；
The isolated port, the input port, the coupling port and the straight-through port length L2 be equal.
Further, the input port and the adjacent side of the coupling port are bevel edge, the input port pair
The width W2 for the right-angle side that should locate is 0.625mm, the bevel edge of the coupling port and angle theta=135 ° of outer side edges；
The isolated port and the adjacent side of the straight-through port are bevel edge, the right angle of the straight-through port corresponding position
The width W2 on side is 0.625mm, the bevel edge of the isolated port and angle theta=135 ° of outer side edges.
Further, the diameter of the bonding gold wire is 25 μm of φ.
Further, the substrate is Al2O3Ceramic substrate.
Another object of the present invention is to provide a kind of for bearing the preparation method of the 3dB Lange coupler of 1000W, benefit
It is realized with microwave thin film hybrid IC processing technology, comprising the following steps:
In Al2O3The front and back of ceramic substrate sputters TiW layers, thickness
Front and back sputters layer gold, thickness
By multiple photoetching process, front plating coupler circuit figure, 4~5 μm of thickness, layer gold, thickness 3 is electroplated in the back side
~4 μm.
Further, Al2O3The front and back of ceramic substrate is all made of magnetic control platform and sputters TiW layers and sputtering layer gold.
Beneficial effect provided by the present invention for bearing the 3dB Lange coupler of 1000W is: with prior art phase
Than coupler provided by the invention is (length × width × height: 8.634mm × 2.518mm × 1.0mm) small in size；High power rating,
The 1000W input power of wide pulse width 3ms, big space rate (30%) can be born, product utilization microwave thin film hybrid IC adds
Work technique is realized, is easy to batch production and technical indicator consistency is good.
Detailed description of the invention
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to embodiment or description of the prior art
Needed in attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description is only of the invention some
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is provided in an embodiment of the present invention for bearing the structural schematic diagram of the 3dB Lange coupler of 1000W；
Fig. 2 is provided in an embodiment of the present invention for bearing the structure of the 3dB Lange coupler dimensioning line of 1000W
Schematic diagram；
Fig. 3 is the performance indicator figure for the coupler tested by PNA-X Network Analyzer Network Analyzer.
Wherein, marked in the figure:
1- isolated port；The length of 2- second refers to line；3- third length refers to line；The short finger line of 4- first；5- input port；6- coupled end
Mouthful；7- bonding gold wire；The length of 8- the 4th refers to line；The short finger line of 9- the 5th；10- straight-through port.
Specific embodiment
In order to which technical problems, technical solutions and advantages to be solved are more clearly understood, tie below
Accompanying drawings and embodiments are closed, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only
To explain the present invention, it is not intended to limit the present invention.
Fig. 1 and Fig. 2 is please referred to, now the 3dB Lange coupler provided by the present invention for bearing 1000W is said
It is bright.The 3dB Lange coupler for being used to bear 1000W, including substrate, the substrate are equipped with input port 5, coupled end
Mouthfuls 6, straight-through port 10, isolated port 1, multiple connections finger-like microstrip line between ports and it is connected to finger-like microstrip line
Between bonding gold wire, length L1 between the outside of the isolated port 1 and the outside of the input port 5 is 8.634mm；
Width W1 between the outside of the input port 5 and the outside of the coupling port 6 is 2.518mm；The height H of the substrate
For 1mm；The width W3 of the finger-like microstrip line is 0.100mm；The spacing W4 of adjacent finger-like microstrip line is 0.084mm.
Provided by the present invention for bearing the 3dB Lange coupler of 1000W, compared with prior art, the present invention is provided
Coupler, it is (length × width × height: 8.634mm × 2.518mm × 1.0mm) small in size；High power rating can bear wide pulse width
The 1000W input power of (3ms), big space rate (30%), the realization of product utilization microwave thin film hybrid IC processing technology,
It is easy to batch production and technical indicator consistency is good.
The structure and size of coupler provided by the invention are to optimize 3dB Lange coupler circuit by three-dimensional software
Topological form, verified, corrected repeatedly by Multi simulation running and many experiments, obtained interdigital microstrip line suitable width and
Spacing realizes the interconnection of the circuit between interdigital microstrip line by being bonded 25 μm of spun golds of Φ.
Using 1mm thickness Al2O3Ceramic substrate, using microwave thin film hybrid IC processing technology, completing can be born
The input power of high power 1000W, but realize under the condition of small signal Insertion Loss of coupler, input and output standing-wave ratio it is excellent
Performance.
3dB Lange when inputting small signal -15dBm is tested by PNA-X Network Analyzer Network Analyzer
The performance indicator of coupler, referring to Fig. 3 and following table:
Under condition of small signal, technical indicator which reaches:
Working frequency 3.1~4.5 (GHz)
Insertion Loss :≤0.22dB
Input and output standing wave :≤1.24
Wherein, test value input vswr (S11SWR) and output VSWR (S22SWR) should be theoretically identical values, real
Since the test error of test fixture is slightly different when border is tested.
Fig. 1 and Fig. 2 is please referred to, a kind of tool as the 3dB Lange coupler provided by the present invention for bearing 1000W
Body embodiment, multiple finger-like microstrip lines specifically include 5 finger lines, and the respectively first short finger line 4, second is long to refer to line 2, the
Three length refer to that the length of line the 3, the 4th refers to line 8 and the 5th short finger line 9, and first short finger 4 one end of line is connect with the inside of the input port 5；
Second length refers to that 2 one end of line and the inside of the isolated port 1 are connect；Third length refers to that 3 both ends of line are separately connected the straight-through port
10 and the input port 5；4th length refers to that 8 one end of line is connect with the coupling port 6；5th short 9 one end of finger line and described straight
Go side mouthful 10 connects；The described first short length L4 for referring to line 4 and the 5th short finger line 9 is 3.692mm；The third length refers to
The length L3 of line 3 is 7.384mm；The described second long end for referring to line 2 is away from the distance L5 on the inside of the input port 5
0.084mm；Distance L5 of the described 4th long end for referring to line 8 away from 10 inside of straight-through port is 0.084mm；The isolation end
Mouthful 1, the length L2 of the input port 5, the coupling port 6 and the straight-through port 10 is equal, L2=0.625mm.
Fig. 1 and Fig. 2 is please referred to, a kind of tool as the 3dB Lange coupler provided by the present invention for bearing 1000W
Body embodiment, the input port 5 and the adjacent side of the coupling port 6 are bevel edge, 5 corresponding position of input port
Right-angle side width W2 be 0.625mm, the bevel edge of the coupling port 6 and angle theta=135 ° of outer side edges, the input terminal
5 bevel edge of mouth and angle theta=135 ° of outer side edges；The isolated port 1 and the adjacent side of the straight-through port 10 are oblique
Side, the width W2 of the right-angle side of 10 corresponding position of straight-through port are 0.625mm, the bevel edge and outer side edges of the isolated port 1
Angle theta=135 °, the bevel edge of the straight-through port 10 and angle theta=135 ° of outer side edges.
Fig. 1 and Fig. 2 is please referred to, a kind of tool as the 3dB Lange coupler provided by the present invention for bearing 1000W
Body embodiment, the diameter of the bonding gold wire 7 are 25 μm of φ.
Wherein, a kind of specific embodiment party as the 3dB Lange coupler provided by the present invention for bearing 1000W
Formula, the substrate are Al2O3Ceramic substrate.
Another object of the present invention is to provide a kind of for bearing the preparation method of the 3dB Lange coupler of 1000W, benefit
It is realized with microwave thin film hybrid IC processing technology, comprising the following steps:
In Al2O3The front and back of ceramic substrate sputters TiW layers, thickness
Front and back sputters layer gold, thickness
Pass through multiple photoetching process, Al2O3The front plating coupler circuit figure of ceramic substrate, 4~5 μm of thickness；The back side
Plating layer gold, 3~4 μm of thickness.TiW layers are adhesion layer, for improving conductor metal (layer gold) and Al2O3The attachment of ceramic substrate
Power, then by magnetic control platform sputtering seed layer, namelyThick layer gold is used to form connection when subsequent plating thick layer gold
Conductive layer.
The technique can guarantee circuit actual fabrication dimension of picture and Theoretical Design value deviation control ± 2.5 μm with
It is interior, it ensure that the good uniformity between high-volume manufacture and batch.
Al2O3The front and back of ceramic substrate is all made of magnetic control platform and sputters TiW layers and layer gold.Magnetron sputtering is object
One kind of physical vapor deposition (Physical Vapor Deposition, PVD).General sputtering method can be used for preparing metal,
More materials such as semiconductor, insulator, and have many advantages, such as that equipment is simple, easily controllable, plated film area is big and adhesive force is strong.Because
It is to carry out high-speed sputtering at low pressure, it is necessary to effectively improve the ionization level of gas.Magnetron sputtering passes through in target cathode surface
Magnetic field is introduced, improves plasma density to the constraint of charged particle using magnetic field to increase sputtering raste.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (7)
1. the 3dB Lange coupler for bearing 1000W, including substrate, the substrate is equipped with input port, coupled end
It mouth, straight-through port, isolated port, multiple connection finger-like microstrip lines between ports and is connected between finger-like microstrip line
Bonding gold wire, which is characterized in that the length L1 between the outside of the isolated port and the outside of the input port is
8.634mm；
Width W1 between the outside of the input port and the outside of the coupling port is 2.518mm；
The height H of the substrate is 1mm；
The width W3 of the finger-like microstrip line is 0.100mm；
The spacing W4 of adjacent finger-like microstrip line is 0.084mm.
2. as described in claim 1 for bearing the 3dB Lange coupler of 1000W, which is characterized in that multiple finger-like
Microstrip line specifically includes:
First short finger line, one end is connect with the inside of the input port；
Second length refers to line, and one end is connect with the inside of the isolated port；
Third length refers to line, and both ends are separately connected the straight-through port and the input port；
4th length refers to line, and one end is connect with the coupling port；
5th short finger line, one end are connect with the straight-through port；
The described first short length L4 for referring to line and the 5th short finger line is 3.692mm；
The long length L3 for referring to line of the third is 7.384mm；
The described second long end for referring to line is 0.084mm away from the distance L5 on the inside of the input port；
The described 4th long end for referring to line is 0.084mm away from the distance L5 on the inside of the straight-through port；
The isolated port, the input port, the coupling port and the straight-through port length L2 be equal.
3. as claimed in claim 2 for bearing the 3dB Lange coupler of 1000W, which is characterized in that the input port
The side adjacent with the coupling port is bevel edge, and the width W2 of the right-angle side of the input port corresponding position is 0.625mm,
The bevel edge of the coupling port and angle theta=135 ° of outer side edges；
The isolated port and the adjacent side of the straight-through port are bevel edge, the right-angle side of the straight-through port corresponding position
Width W2 is 0.625mm, the bevel edge of the isolated port and angle theta=135 ° of outer side edges.
4. as described in claim 1 for bearing the 3dB Lange coupler of 1000W, which is characterized in that the bonding gold wire
Diameter be 25 μm of φ.
5. as described in claim 1 for bearing the 3dB Lange coupler of 1000W, which is characterized in that the substrate is
Al2O3Ceramic substrate.
6. it is as described in any one in claim 1-5 for bearing the preparation method of the 3dB Lange coupler of 1000W, it is special
Sign is, to be made using microwave thin film hybrid IC technique, comprising the following steps:
In Al2O3The front and back of ceramic substrate sputters TiW layers, thickness
Front and back sputters layer gold, thickness
By multiple photoetching process, front plating coupler circuit figure, 4~5 μm of thickness, layer gold, 3~4 μ of thickness is electroplated in the back side
m。
7. as claimed in claim 6 for bearing the preparation method of the 3dB Lange coupler of 1000W, which is characterized in that institute
State Al2O3The front and back of ceramic substrate is all made of magnetic control platform and sputters TiW layers and sputtering layer gold.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910150536.4A CN110233323A (en) | 2019-02-28 | 2019-02-28 | For bearing the 3dB Lange coupler and preparation method of 1000W |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910150536.4A CN110233323A (en) | 2019-02-28 | 2019-02-28 | For bearing the 3dB Lange coupler and preparation method of 1000W |
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| CN110233323A true CN110233323A (en) | 2019-09-13 |
Family
ID=67860481
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111146532A (en) * | 2020-01-08 | 2020-05-12 | 电子科技大学 | Multi-bit phase shift unit of shared coupler |
| CN111029705B (en) * | 2019-12-17 | 2021-07-20 | 北京邮电大学 | Single-layer plane broadband hybrid ring coupler based on short-circuit multi-wire coupling branch |
| CN113572442A (en) * | 2021-05-24 | 2021-10-29 | 北京无线电测量研究所 | Single-balance absorption type amplitude limiter |
| CN113964470A (en) * | 2021-10-28 | 2022-01-21 | 江苏亨鑫科技有限公司 | Coupler, bridge network unit and ultra wide band dual beam antenna |
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| TW200742164A (en) * | 2006-04-17 | 2007-11-01 | Yeong-Her Wang | PCB-compatible 3dB coupler using microstrip-to-CPW via-hole transitions |
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| CN104079242A (en) * | 2014-07-23 | 2014-10-01 | 上海银晟伟业信息技术有限公司 | Frequency multiplier |
| CN206461078U (en) * | 2017-02-09 | 2017-09-01 | 成都泰格微电子研究所有限责任公司 | 2 6GHz, ceramic base high-power lange coupler |
| CN209282366U (en) * | 2019-02-28 | 2019-08-20 | 中国电子科技集团公司第十三研究所 | For bearing the 3dB Lange coupler of 1000W |
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| CN86108884A (en) * | 1985-12-30 | 1987-06-24 | 格特电信公司 | Be specially adapted to the monolateral band harmmonic constant of high frequency reception and transmitting system |
| TW200742164A (en) * | 2006-04-17 | 2007-11-01 | Yeong-Her Wang | PCB-compatible 3dB coupler using microstrip-to-CPW via-hole transitions |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111029705B (en) * | 2019-12-17 | 2021-07-20 | 北京邮电大学 | Single-layer plane broadband hybrid ring coupler based on short-circuit multi-wire coupling branch |
| CN111146532A (en) * | 2020-01-08 | 2020-05-12 | 电子科技大学 | Multi-bit phase shift unit of shared coupler |
| CN113572442A (en) * | 2021-05-24 | 2021-10-29 | 北京无线电测量研究所 | Single-balance absorption type amplitude limiter |
| CN113572442B (en) * | 2021-05-24 | 2023-11-28 | 北京无线电测量研究所 | Single-balance absorption type limiter |
| CN113964470A (en) * | 2021-10-28 | 2022-01-21 | 江苏亨鑫科技有限公司 | Coupler, bridge network unit and ultra wide band dual beam antenna |
| CN113964470B (en) * | 2021-10-28 | 2023-09-01 | 江苏亨鑫科技有限公司 | Coupler, bridge network unit and ultra-wideband dual-beam antenna |
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