CN110233187B - Lattice mismatched multi-junction solar cell structure - Google Patents
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Abstract
The application provides a lattice mismatched multi-junction solar cell structure comprising: the device comprises a substrate, at least one lattice mismatched subcell mismatched with the lattice constant of the substrate and a tunneling junction grown on the lattice mismatched subcell; the tunneling junction includes: a P-type doped functional layer and an N-type doped functional layer; the P-type doped functional layer is a C-doped P-type AlGaAsSb layer or a C-doped P-type GaAsSb layer. The P-type AlGaAsSb layer doped with C or the P-type GaAsSb layer doped with C is adopted to replace a P-type (Al) InGaAs layer doped with C in the prior art and is used as a P-type doping functional layer of a tunneling junction structure of the lattice mismatch solar cell. The P-type layer does not contain an In component, so that the problem that the P-type layer is mismatched with a bulk material InGaAs crystal lattice In the solar cell due to the fact that the doping reaction source halogen gas of C inhibits the incorporation of the In component can be effectively avoided.
Description
Technical Field
The invention relates to the technical field of solar cell manufacturing, in particular to a lattice mismatched multi-junction solar cell structure.
Background
Solar cells can convert solar energy directly into electrical energy, which is one of the most efficient forms of clean energy. The gallium arsenide triple-junction solar cell has comprehensively replaced the Si solar cell to become the main power source of the spacecraft by virtue of the advantages of higher conversion efficiency (about 2 times that of the Si solar cell), excellent radiation resistance, stable temperature characteristic, easiness in scale production and the like. The gallium arsenide triple-junction solar cell represented by GaInP/InGaAs/Ge has the conversion efficiency of over 30% under the space spectrum (AM0) and over 40% under the ground high-concentration condition, and becomes a leader of the conversion efficiency of the solar cell.
In the prior art, solar cells are classified into lattice-matched solar cells and lattice-mismatched solar cells, that is, solar cells including lattice-mismatched subcells. Lattice-matched tunnel junctions are required to be arranged between the sub-cells of the solar cell. The tunneling junction comprises an N-type doping functional layer and a P-type doping functional layer. In the prior art, a P-type doped functional layer is usually a C-doped P-type (Al) InGaAs layer (the chemical formula (Al) InGaAs with brackets indicates that it may be AlInGaAs or InGaAs, and similar chemical formulas can be obtained in the following, which is not described in the embodiments of the present invention).
Disclosure of Invention
In view of the above, the present invention provides a lattice-mismatched multi-junction solar cell structure, so as to solve the problem in the prior art that when a p-type (Al) InGaAs layer of C is grown on a lattice-mismatched sub-cell, dislocation defects are easily generated, which affects the efficiency of the solar cell.
In order to achieve the purpose, the invention provides the following technical scheme:
a lattice mismatched multi-junction solar cell structure comprising:
a substrate;
at least one junction of a lattice mismatched subcell with the lattice constant of the substrate and a tunneling junction grown on the lattice mismatched subcell;
the tunneling junction includes: a P-type doped functional layer and an N-type doped functional layer;
the P-type doped functional layer is a C-doped P-type AlGaAsSb layer or a C-doped P-type GaAsSb layer;
the N-type doped functional layer is an N-type InGaAs layer, an N-type AlInGaAs layer, an N-type GaInP layer or an N-type AlGaInP layer, and the doped impurity is Si or Te;
and the lattice constants of the P-type doped functional layer and the N-type doped functional layer are matched with the lattice constant of the lattice mismatched sub-cell.
Preferably, the doping concentration of C in the P-type doped functional layer is in the range of: 1X 1019/cm3～2×1020/cm3Inclusive.
Preferably, the P-type doped functional layer has a thickness in the range of 10nm to 30nm, inclusive.
Preferably, the lattice-mismatched multi-junction solar cell sequentially comprises, in the growth direction: the device comprises a first sub-battery, a first tunnel junction, a metamorphic buffer layer, a DBR reflecting layer, a second sub-battery, a second tunnel junction and a third sub-battery.
Preferably, the first sub-cell is a Ge sub-cell, the second sub-cell is an InGaAs sub-cell, and the third sub-cell is an AlGaInP sub-cell;
wherein the second sub-cell is the lattice mismatch sub-cell.
Preferably, the lattice-mismatched multi-junction solar cell sequentially comprises, in the growth direction: the photovoltaic device comprises a first sub-battery, a first tunnel junction, a metamorphic buffer layer, a DBR reflecting layer, a second sub-battery, a second tunnel junction, a third sub-battery, a third tunnel junction and a fourth sub-battery.
Preferably, the first sub-cell is a Ge sub-cell, the second sub-cell is an InGaAs sub-cell with a band gap of 1.0eV, the third sub-cell is an AlInGaAs sub-cell with a band gap of 1.4eV, and the fourth sub-cell is an AlGaInP sub-cell with a band gap of 1.9 eV;
wherein the second subcell and the third subcell are the lattice-mismatched subcells.
Preferably, the lattice-mismatched multi-junction solar cell sequentially comprises, in the growth direction: the device comprises an epitaxial corrosion stop layer, an ohmic contact layer, a first sub-battery, a first tunnel junction, a second sub-battery, a second tunnel junction, a first metamorphic buffer layer, a third sub-battery, a third tunnel junction, a second metamorphic buffer layer and a fourth sub-battery.
Preferably, the first sub-cell is a GaInP sub-cell with a band gap of 1.9eV, the second sub-cell is a GaAs sub-cell with a band gap of 1.4eV, the third sub-cell is an InGaAs sub-cell with a band gap of 1.0eV, and the fourth sub-cell is an InGaAs sub-cell with a band gap of 0.7 eV;
wherein the third sub-cell is the lattice mismatch sub-cell.
According to the technical scheme, the lattice-mismatched multi-junction solar cell structure provided by the invention comprises the following components in percentage by weight: a substrate, at least one junction of a lattice mismatched subcell with a lattice constant of the substrate and a tunneling junction grown on the lattice mismatched subcell; the tunneling junction includes: a P-type doped functional layer and an N-type doped functional layer; the P-type doped functional layer is a C-doped P-type AlGaAsSb layer or a C-doped P-type GaAsSb layer; the N-type doped functional layer is an N-type InGaAs layer, an N-type AlInGaAs layer, an N-type GaInP layer or an N-type AlGaInP layer, and the doped impurity is Si or Te; and the lattice constants of the P-type doped functional layer and the N-type doped functional layer are matched with the lattice constant of the lattice mismatched sub-cell. The P-type AlGaAsSb layer doped with C or the P-type GaAsSb layer doped with C is adopted to replace a P-type (Al) InGaAs layer doped with C in the prior art and is used as a P-type doping functional layer of a tunneling junction structure of the lattice mismatch solar cell. The P-type layer does not contain an In component, so that the problem that the P-type layer is mismatched with a bulk material InGaAs crystal lattice In the solar cell due to the fact that the doping reaction source halogen gas of C inhibits the incorporation of the In component can be effectively avoided.
In addition, the material of the P-type doped functional layer of the tunneling junction is changed, and the P-type doped functional layer and the N-type doped functional layer form a II-type heterojunction, the energy band type of the heterojunction has a lower tunneling potential barrier, and higher tunneling current can be obtained. And the (Al) GaAsSb material lattice-matched with the lattice mismatch sub-cell (InGaAs sub-cell) has a band gap at least wider than that of the next junction sub-cell, so that the light irradiation current loss caused by the absorption of incident light by the tunneling junction is reduced, and the lattice mismatch multi-junction solar cell provided by the invention can improve the photoelectric conversion efficiency of the solar cell.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic view of a partial structure of a lattice mismatched solar cell according to an embodiment of the present invention;
fig. 2 is a schematic view of another lattice-mismatched solar cell structure provided in the embodiment of the invention;
fig. 3 is a schematic view of another lattice-mismatched solar cell structure provided in the embodiments of the present invention;
fig. 4 is a schematic structural diagram of another lattice-mismatched solar cell according to an embodiment of the present invention.
Detailed Description
As mentioned in the background section, the P-type doped functional layer in the tunnel junction in the prior art usually uses a C-doped P-type (Al) InGaAs layer, however, the C-doped P-type (Al) InGaAs in the prior art is prone to dislocation defects, which affects the efficiency of the solar cell.
The inventors found that the root cause of the above phenomenon is:
the lattice matching triple-junction cell which is commercially available on a large scale at present emphasizes that lattice constants among materials of sub-cells are completely adapted, so that the band gap combination of the sub-cells is 1.89eV/1.41eV/0.67eV, the band gap (1.41eV, InGaAs) of a middle cell is greatly different from that of a bottom cell (0.67eV, Ge), the photocurrent of the bottom cell is too large, the infrared part of the solar spectrum except 880nm is not fully utilized, and the improvement of the photoelectric conversion efficiency is limited.
The most effective way to improve the conversion efficiency of the solar cell is to improve the band gap matching degree of each sub-cell, so as to more reasonably distribute the solar spectrum. Theoretical analysis shows that if a material with the forbidden band width of 1.0-1.1 eV can be found, a corresponding sub-cell is inserted into a three-junction cell to form a four-junction cell, and the photoelectric conversion efficiency of the solar cell is remarkably improved. At present according to In1-xGaxThe As ternary alloy material structure (composition) and the forbidden bandwidth can change the forbidden bandwidth of the As ternary alloy material to 1.41-0.33 eV by changing the In component, thereby meeting the requirement of fully utilizing the solar spectrum. The choice of In with this adjustable lattice parameter is based on the feasibility of preparation and epitaxial lattice matching1-xGaxAs materials are used As sub-batteries, two technical routes of inverted growth and forward growth exist at present.
However, either the inverted growth or the forward growth technology route requires the growth of a lattice-matched tunnel junction on InGaAs bulk material of a certain In composition. And p-type (Al) grown by MOCVD (metal organic chemical vapor deposition)) The tunnel junction functional layer of InGaAs often employs C or Zn as a dopant. The large Zn diffusion coefficient makes it difficult to obtain a steep doping interface to affect the tunneling junction effect. And the C reaction source CCl generally used4Or CBr4The halogen gas can inhibit In incorporation, so that the grown p-type (Al) InGaAs and InGaAs bulk material are lattice mismatched, dislocation defects are generated, and the cell efficiency is influenced. Further for a C-doped InGaAs material, the higher the In composition, the more readily C replaces In to form a donor impurity, resulting In N-type doping.
Based on this, the present invention provides a lattice mismatched multi-junction solar cell structure comprising:
a substrate;
at least one junction of a lattice mismatched subcell with the lattice constant of the substrate and a tunneling junction grown on the lattice mismatched subcell;
the tunneling junction includes: a P-type doped functional layer and an N-type doped functional layer;
the P-type doped functional layer is a C-doped P-type AlGaAsSb layer or a C-doped P-type GaAsSb layer;
the N-type doped functional layer is an N-type InGaAs layer, an N-type AlInGaAs layer, an N-type GaInP layer or an N-type AlGaInP layer, and the doped impurity is Si or Te;
and the lattice constants of the P-type doped functional layer and the N-type doped functional layer are matched with the lattice constant of the lattice mismatched sub-cell.
The lattice-mismatched multi-junction solar cell structure provided by the invention comprises the following components: at least one junction of a lattice-mismatched subcell and a tunneling junction grown on the lattice-mismatched subcell; the tunneling junction includes: a P-type doped functional layer and an N-type doped functional layer; the P-type doped functional layer is a C-doped P-type AlGaAsSb layer or a C-doped P-type GaAsSb layer. The P-type AlGaAsSb layer doped with C or the P-type GaAsSb layer doped with C is adopted to replace a P-type (Al) InGaAs layer doped with C in the prior art and is used as a P-type doping functional layer of a tunneling junction structure of the lattice mismatch solar cell. The P-type layer does not contain an In component, so that the problem that the P-type layer is mismatched with a bulk material InGaAs crystal lattice In the solar cell due to the fact that the doping reaction source halogen gas of C inhibits the incorporation of the In component can be effectively avoided.
In addition, the material of the P-type doped functional layer of the tunneling junction is changed, and the P-type doped functional layer and the N-type doped functional layer form a II-type heterojunction, the energy band type of the heterojunction has a lower tunneling potential barrier, and higher tunneling current can be obtained. And the (Al) GaAsSb material lattice-matched with the lattice mismatch sub-cell (InGaAs sub-cell) has a band gap at least wider than that of the next junction sub-cell, so that the light irradiation current loss caused by the absorption of incident light by the tunneling junction is reduced, and the lattice mismatch multi-junction solar cell provided by the invention can improve the photoelectric conversion efficiency of the solar cell.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a lattice mismatched multi-junction solar cell according to an embodiment of the present invention. The lattice-mismatched multi-junction solar cell provided in the embodiment of the invention comprises:
a substrate;
at least one lattice mismatched subcell 10 mismatched with the lattice constant of the substrate and a tunneling junction 11 grown on the lattice mismatched subcell 10;
the tunnel junction 11 includes: a P-type doped functional layer 111 and an N-type doped functional layer 112;
the P-type doped functional layer 111 is a C-doped P-type AlGaAsSb layer or a C-doped P-type GaAsSb layer;
the N-type doped functional layer is an N-type InGaAs layer, an N-type AlInGaAs layer, an N-type GaInP layer or an N-type AlGaInP layer, and the doped impurity is Si or Te;
and the lattice constants of the P-type doped functional layer and the N-type doped functional layer are matched with the lattice constant of the lattice mismatched sub-cell.
In the embodiment of the present invention, the specific material of the lattice mismatched subcell is not limited, and any material may be used as long as the material is mismatched with the lattice constant of the substrate. In an embodiment of the invention, the material of the lattice mismatch subcell is mainly an InGaAs subcell. In the embodiment of the invention, the specific structure of the solar cell is not limited, and the solar cell can be a multi-junction solar cell obtained by inverted growth or a multi-junction solar cell obtained by forward growth. In addition, the number of junctions of the multi-junction solar cell is not limited in the embodiment of the invention, and the multi-junction solar cell may be a triple-junction solar cell or a solar cell with more than three junctions, such as a quadruple-junction solar cell. It should be noted that, regardless of the specific number of junctions of the multi-junction solar cell, the multi-junction solar cell needs to include at least one lattice mismatched subcell on which a tunneling junction is grown.
In this embodiment, the N-type doped functional layer of the tunnel junction is made of N-type InGaAs, N-type AlInGaAs, N-type GaInP or N-type AlGaInP, and the doping is made of Si or Te as dopant with a doping concentration of 5 × 1019/cm3～5×1020/cm3And a thickness of 10nm to 30nm, inclusive.
In this embodiment, the doping concentration and the thickness of the P-type doped functional layer of the tunnel junction are not limited, and in an embodiment of the present invention, the doping concentration of C in the P-type doped functional layer is within a range of: 1X 1019/cm3～2×1020/cm3Inclusive. The thickness range of the P-type doped functional layer is 10nm-30nm, inclusive.
The lattice-mismatched multi-junction solar cell structure provided by the invention comprises the following components: a substrate; at least one junction of a lattice mismatched subcell with the lattice constant of the substrate and a tunneling junction grown on the lattice mismatched subcell; the tunneling junction includes: a P-type doped functional layer and an N-type doped functional layer; the P-type doped functional layer is a C-doped P-type AlGaAsSb layer or a C-doped P-type GaAsSb layer; the N-type doped functional layer is an N-type InGaAs layer, an N-type AlInGaAs layer, an N-type GaInP layer or an N-type AlGaInP layer, and the doped impurity is Si or Te; and the lattice constants of the P-type doped functional layer and the N-type doped functional layer are matched with the lattice constant of the lattice mismatched sub-cell. The P-type AlGaAsSb layer doped with C or the P-type GaAsSb layer doped with C is adopted to replace a P-type (Al) InGaAs layer doped with C in the prior art and is used as a P-type doping functional layer of a tunneling junction structure of the lattice mismatch solar cell. The P-type layer does not contain an In component, so that the problem that the P-type layer is mismatched with a bulk material InGaAs crystal lattice In the solar cell due to the fact that the doping reaction source halogen gas of C inhibits the incorporation of the In component can be effectively avoided.
In addition, the material of the P-type doped functional layer of the tunneling junction is changed, and the P-type doped functional layer and the N-type doped functional layer form a II-type heterojunction, the energy band type of the heterojunction has a lower tunneling potential barrier, and higher tunneling current can be obtained. And the (Al) GaAsSb material lattice-matched with the lattice mismatch sub-cell (InGaAs sub-cell) has a band gap at least wider than that of the next junction sub-cell, so that the light irradiation current loss caused by the absorption of incident light by the tunneling junction is reduced, and the lattice mismatch multi-junction solar cell provided by the invention can improve the photoelectric conversion efficiency of the solar cell.
Specifically, please refer to fig. 2, fig. 2 is a schematic structural diagram of a forward triple-junction solar cell according to an embodiment of the present invention; the forward triple-junction solar cell provided by the embodiment of the invention sequentially comprises a first sub-cell 21, a first tunneling junction 22, an metamorphic buffer layer 23, a DBR reflecting layer 24, a second sub-cell 25, a second tunneling junction 26 and a third sub-cell 27 along the growth direction of the forward triple-junction solar cell. The forward triple-junction solar cell provided by the embodiment of the invention is formed by growing on a Ge substrate by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) method, and comprises the following steps: the battery comprises a Ge bottom battery, an InGaAs middle battery and a top battery, wherein the top battery is an AlGaInP top battery or a GaInP top battery; the InGaAs middle cell is a lattice mismatch sub-cell.
In the embodiment of the present invention, the structure of the first tunnel junction is not limited, and the first tunnel junction also includes an N-type doped functional layer and a P-type doped functional layer. In one embodiment of the invention, the first tunneling junction adopts an N-type GaAs layer and a P-type AlGaAs layer or an N-type GaInP layer and a P-type AlGaAs layer structure, the N-type doping adopts Si or Te, and the P-type doping adopts C.
In this embodiment, the N-type doped functional layer of the second tunnel junction is made of N-type InGaAs or AlInGaAs, or N-type GaInP or AlGaInP, and the doping is made of Si or Te as dopant with a doping concentration of 5 × 1019/cm3～5×1020/cm3The thickness is 10nm-30 nm.
In the embodiment of the invention, the P-type doped functional layer of the second tunneling junction is a C-doped P-type AlGaAsSb layer or a C-doped P-type GaAsSb layer, wherein the C-doped P-type Al layerxDoping concentration of C in GaAs layer 1X 1019/cm3～2×1020/cm3And a thickness of 10nm to 30nm, inclusive.
It should be noted that in this embodiment, the N-type doped functional layers of the first tunnel junction and the second tunnel junction are both located below the P-type doped functional layer, so as to implement the function of the tunnel junction. And lattice constants of the P-type doped functional layer and the N-type doped functional layer of the second tunneling junction are matched with lattice constants of the second sub-cell and the third sub-cell.
Referring to fig. 3, fig. 3 is a schematic structural diagram of a forward four-junction solar cell according to an embodiment of the present invention; the forward four-junction solar cell structure is a GaInP/AlInGaAs/InGaAs/Ge forward four-junction solar cell and is formed by growing on a Ge substrate by adopting a metal organic chemical vapor phase epitaxy deposition MOCVD method, and the four sub-cells sequentially comprise the following components in the growth direction: a first sub-cell, a second sub-cell, a third sub-cell, and a fourth sub-cell; the first sub-battery is a Ge sub-battery; the second sub-cell is an InGaAs sub-cell with a band gap of 1.0 eV; the third sub-cell is an AlInGaAs sub-cell with a band gap of 1.4 eV; the fourth sub-cell is an AlGaInP sub-cell or a GaInP sub-cell with a band gap of 1.9 eV; and the second sub-battery and the third sub-battery are lattice-mismatched sub-batteries.
Specifically, as shown in fig. 4, the first sub-battery 31, the first tunnel junction 32, the metamorphic buffer layer 33, the DBR reflective layer 34, the second sub-battery 35, the second tunnel junction 36, the third sub-battery 37, the third tunnel junction 38, and the fourth sub-battery 39 are included in this order from bottom to top.
In the embodiment of the present invention, the structure of the first tunnel junction is not limited, and the first tunnel junction also includes an N-type doped functional layer and a P-type doped functional layer. In one embodiment of the invention, the first tunneling junction adopts an N-type GaAs layer and a P-type AlGaAs layer or an N-type GaInP layer and a P-type AlGaAs layer structure, the N-type doping adopts Si or Te, and the P-type doping adopts C.
In this embodiment, the N-type doped functional layers of the second and third tunnel junctions are made of N-type InGaAs or AlInGaAs, or N-type GaInP or AlGaInP materials, and the doping is made of Si or Te as dopant with a doping concentration of 5 × 1019/cm3～5×1020/cm3The thickness is 10nm-30 nm.
In the embodiment of the invention, the P-type doped functional layers of the second tunnel junction and the third tunnel junction are both C-doped P-type AlGaAsSb layers or C-doped P-type GaAsSb layers, wherein the C-doped P-type Al layersxDoping concentration of C in GaAs layer 1X 1019/cm3～2×1020/cm3And a thickness of 10nm to 30nm, inclusive. The crystal lattice of the P type doping functional layer of the second tunnel junction is matched with the InGaAs sub-cell of the second sub-cell, and the crystal lattice of the P type doping functional layer of the third tunnel junction is matched with the AlInGaAs sub-cell of the third sub-cell.
It should be noted that in this embodiment, the N-type doped functional layers of the first tunnel junction, the second tunnel junction, and the third tunnel junction are all located below the P-type doped functional layer, so as to implement the function of the tunnel junction. Lattice constants of the P-type doped functional layer and the N-type doped functional layer of the second tunneling junction are matched with lattice constants of the adjacent sub-cells.
Another embodiment of the present invention further provides an inverted four-junction solar cell, please refer to fig. 4, where fig. 4 is a schematic structural diagram of the inverted four-junction solar cell according to the embodiment of the present invention; the inverted four-junction solar cell is formed by growing on a GaAs substrate by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) method, and comprises the following steps: the epitaxial corrosion cut-off layer and the ohmic contact layer are positioned on the epitaxial corrosion cut-off layer; the first sub-battery, the second sub-battery, the third sub-battery and the fourth sub-battery are positioned on the ohmic contact layer and sequentially arranged along the direction deviating from the epitaxial corrosion stop layer; the first sub-cell is a GaInP sub-cell with a band gap of 1.9 eV; the second sub-cell is a GaAs sub-cell with a band gap of 1.4 eV; the third sub-cell is an InGaAs sub-cell with a band gap of 1.0 eV; the fourth sub-cell is an InGaAs sub-cell with a band gap of 0.7 eV; the third sub-cell is a lattice-mismatched sub-cell, that is, the InGaAs sub-cell with a band gap of 1.0eV is a lattice-mismatched sub-cell.
As shown in fig. 4, the etch stop layer 41, the ohmic contact layer 42, the first sub-cell 43, the first tunnel junction 44, the second sub-cell 45, the second tunnel junction 46, the first metamorphic buffer layer 47, the third sub-cell 48, the third tunnel junction 49, the second metamorphic buffer layer 410, and the fourth sub-cell 411 are epitaxially grown in sequence from bottom to top.
In the embodiment of the invention, the structures of the first tunnel junction and the second tunnel junction are not limited, and the first tunnel junction and the second tunnel junction also comprise an N-type doped functional layer and a P-type doped functional layer. In one embodiment of the invention, the first tunnel junction and the second tunnel junction are both of an N-type GaAs layer and a P-type AlGaAs layer or an N-type GaInP layer and a P-type AlGaAs layer structure, the N-type doping adopts Si or Te, and the P-type doping adopts C.
In this embodiment, the N-type doped functional layer of the third tunnel junction is made of N-type InGaAs or AlInGaAs, or N-type GaInP or AlGaInP, and the doping is made of Si or Te as dopant with a doping concentration of 5 × 1019/cm3～5×1020/cm3The thickness is 10nm-30 nm.
In the embodiment of the invention, the P-type doped functional layer of the third tunnel junction is a C-doped P-type AlGaAsSb layer or a C-doped P-type GaAsSb layer, wherein the C-doped P-type Al layerxDoping concentration of C in GaAs layer 1X 1019/cm3～2×1020/cm3And a thickness of 10nm to 30nm, inclusive. The lattice of the P-type doped functional layer of the third tunneling junction is matched with a third subcell, namely an InGaAs subcell.
It should be noted that in this embodiment, the N-type doped functional layers of the first tunnel junction, the second tunnel junction, and the third tunnel junction are all located above the P-type doped functional layer, so as to implement the function of the tunnel junction. And lattice constants of the P-type doped functional layer and the N-type doped functional layer of the third tunneling junction are matched with the lattice constant of the third sub-battery.
The lattice-mismatched multi-junction solar cell structure provided by the invention comprises the following components: a substrate; at least one junction of a lattice mismatched subcell with the lattice constant of the substrate and a tunneling junction grown on the lattice mismatched subcell; the tunneling junction includes: a P-type doped functional layer and an N-type doped functional layer; the P-type doped functional layer is a C-doped P-type AlGaAsSb layer or a C-doped P-type GaAsSb layer; the N-type doped functional layer is an N-type InGaAs layer, an N-type AlInGaAs layer, an N-type GaInP layer or an N-type AlGaInP layer, and the doped impurity is Si or Te; and the lattice constants of the P-type doped functional layer and the N-type doped functional layer are matched with the lattice constant of the lattice mismatched sub-cell. The P-type AlGaAsSb layer doped with C or the P-type GaAsSb layer doped with C is adopted to replace a P-type (Al) InGaAs layer doped with C in the prior art and is used as a P-type doping functional layer of a tunneling junction structure of the lattice mismatch solar cell. The P-type layer does not contain an In component, so that the problem that the P-type layer is mismatched with a bulk material InGaAs crystal lattice In the solar cell due to the fact that the doping reaction source halogen gas of C inhibits the incorporation of the In component can be effectively avoided.
In addition, the material of the P-type doped functional layer of the tunneling junction is changed, and the P-type doped functional layer and the N-type doped functional layer form a II-type heterojunction, the energy band type of the heterojunction has a lower tunneling potential barrier, and higher tunneling current can be obtained. And the (Al) GaAsSb material lattice-matched with the lattice mismatch sub-cell (InGaAs sub-cell) has a band gap at least wider than that of the next junction sub-cell, so that the light irradiation current loss caused by the absorption of incident light by the tunneling junction is reduced, and the lattice mismatch multi-junction solar cell provided by the invention can improve the photoelectric conversion efficiency of the solar cell.
It should be noted that, in the present specification, the embodiments are all described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such article or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in an article or device that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (9)
1. A lattice mismatched multi-junction solar cell structure, comprising:
the substrate is a Ge substrate;
at least one junction of a lattice mismatched subcell with the lattice constant of the substrate and a tunneling junction grown on the lattice mismatched subcell; the lattice mismatch sub-cell is an InGaAs sub-cell and/or an AlInGaAs sub-cell;
the tunneling junction includes: a P-type doped functional layer and an N-type doped functional layer;
the P-type doped functional layer is a C-doped P-type AlGaAsSb layer or a C-doped P-type GaAsSb layer, and does not contain an In component, so that the problem that the P-type doped functional layer is mismatched with the InGaAs crystal lattice of the bulk material of the lattice mismatch subcell In the solar cell due to the fact that the In component is inhibited to be incorporated by the C-doped reaction source halogen gas is avoided;
the N-type doped functional layer is an N-type InGaAs layer, an N-type AlInGaAs layer, an N-type GaInP layer or an N-type AlGaInP layer, and the doped impurity is Si or Te;
and the lattice constants of the P-type doped functional layer and the N-type doped functional layer are matched with the lattice constant of the lattice mismatched sub-cell.
2. The lattice mismatched multijunction solar cell structure of claim 1,
the doping concentration of C in the P-type doping functional layer is within the range: 1X 1019/cm3～2×1020/cm3Inclusive.
3. The lattice mismatched multijunction solar cell structure of claim 1,
the thickness range of the P-type doped functional layer is 10nm-30nm, inclusive.
4. The lattice-mismatched multi-junction solar cell structure according to any of claims 1 to 3, wherein the lattice-mismatched multi-junction solar cell comprises, in order along the growth direction: the device comprises a first sub-battery, a first tunnel junction, a metamorphic buffer layer, a DBR reflecting layer, a second sub-battery, a second tunnel junction and a third sub-battery.
5. The lattice mismatched multi-junction solar cell structure according to claim 4, wherein the first subcell is a Ge subcell, the second subcell is an InGaAs subcell, and the third subcell is an AlGaInP subcell;
wherein the second sub-cell is the lattice mismatch sub-cell.
6. The lattice-mismatched multi-junction solar cell structure according to any of claims 1 to 3, wherein the lattice-mismatched multi-junction solar cell comprises, in order along the growth direction: the photovoltaic device comprises a first sub-battery, a first tunnel junction, a metamorphic buffer layer, a DBR reflecting layer, a second sub-battery, a second tunnel junction, a third sub-battery, a third tunnel junction and a fourth sub-battery.
7. The lattice mismatched multi-junction solar cell structure of claim 6, wherein the first sub-cell is a Ge sub-cell, the second sub-cell is an InGaAs sub-cell with a bandgap of 1.0eV, the third sub-cell is an AlInGaAs sub-cell with a bandgap of 1.4eV, and the fourth sub-cell is an AlGaInP sub-cell with a bandgap of 1.9 eV;
wherein the second subcell and the third subcell are the lattice-mismatched subcells.
8. The lattice-mismatched multi-junction solar cell structure according to any of claims 1 to 3, wherein the lattice-mismatched multi-junction solar cell comprises, in order along the growth direction: the device comprises an epitaxial corrosion stop layer, an ohmic contact layer, a first sub-battery, a first tunnel junction, a second sub-battery, a second tunnel junction, a first metamorphic buffer layer, a third sub-battery, a third tunnel junction, a second metamorphic buffer layer and a fourth sub-battery.
9. The lattice mismatched multi-junction solar cell structure of claim 8, wherein the first subcell is a GaInP subcell with a bandgap of 1.9eV, the second subcell is a GaAs subcell with a bandgap of 1.4eV, the third subcell is an InGaAs subcell with a bandgap of 1.0eV, and the fourth subcell is an InGaAs subcell with a bandgap of 0.7 eV;
wherein the third sub-cell is the lattice mismatch sub-cell.
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