CN110233121B - Joining device - Google Patents

Joining device Download PDF

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Publication number
CN110233121B
CN110233121B CN201910163642.6A CN201910163642A CN110233121B CN 110233121 B CN110233121 B CN 110233121B CN 201910163642 A CN201910163642 A CN 201910163642A CN 110233121 B CN110233121 B CN 110233121B
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China
Prior art keywords
chip
bonding
cleaning
joining device
substrate
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CN201910163642.6A
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Chinese (zh)
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CN110233121A (en
Inventor
井口胜次
前川真澄
泽井敬一
东坂浩由
松尾孝信
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Sharp Corp
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Sharp Corp
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    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3512—Cracking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/37—Effects of the manufacturing process
    • H01L2924/37001—Yield

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The joining device includes: a laminar flow generating section; a chip processing section; a cleaning unit for cleaning the chip; a bonding portion that bonds the chip and a substrate; and a conveying mechanism for conveying the chip from the chip processing portion to the bonding portion. Of these, at least the joint portion and the cleaning portion are disposed in the laminar flow generated by the laminar flow generating portion.

Description

Joining device
The present application requests the priority of Japanese patent application 2018-40056 filed in Japan on 3/6.2018 according to item (a) of Japanese patent Law 119. The entire contents of which are incorporated by reference in the present application.
Technical Field
The present invention relates to a bonding apparatus for bonding a chip to a bonded board (substrate).
Background
Semiconductor devices typified by Large Scale Integrated circuits (LSI) are generally mounted on a printed Circuit board or the like for use. A device in which another semiconductor chip is mounted on an LSI formed on a silicon wafer and the LSI and the semiconductor chip are combined functions as a system, whereby one device can be made to have more complicated functions. As a technique for mounting a semiconductor chip on such a wafer, a flip chip mounting technique is known. For example, international publication No. 2013/161891 discloses a bonding apparatus in which a semiconductor chip is bonded to a wafer by flip-chip bonding.
In a process of manufacturing a minute projection display device (display device for image) by bonding (bonding) a micro LED to an LSI in which a driving circuit (driving circuit) is formed, a micro LED array (micro LED array) as a light emitting portion may be bonded to a wafer on which the driving circuit LSI is formed, and a wavelength conversion pattern (wavelength conversion pattern) and a color filter pattern for color display may be formed. The size of one micro LED is about 50 μm to several μm, and the number of the adhered micro LEDs is several tens of thousands to several millions. Therefore, the number of bonding points on one LSI is at least several tens of thousands to several millions, and for small, the size thereof is about 1 μm to 10 μm.
If such a chip/wafer is intended to be formed, the following problems occur. That is, the micro LED needs to be formed into a chip in a display element unit, and the chip formation step includes steps such as back grinding and chipping of the growth substrate, and dust generation cannot be avoided. Therefore, a lot of dust adheres to the micro LED subjected to the chip formation step. Since chips are often housed in a tray and cannot be completely fixed in the tray, dust is likely to be generated during transportation of the tray and the like, and the amount of dust adhering thereto increases. In the case of managing chips in a wafer state, the chips are sometimes stuck to an adhesive sheet, and a paste for adhesion is sometimes attached to the chips. In any case, there is a problem that dust management is difficult in a process of reaching a chip state, and adhesion of various foreign matters cannot be avoided.
Further, if a chip to which a lot of dust and foreign matter are attached is bonded to a wafer by a conventional bonding apparatus, dust adheres to the bonding surface, a large number of bonding failures occur, and a factor of reducing the bonding yield is caused. As the size of the electrode is smaller and the number of bonding electrodes is larger, bonding failure becomes more significant, and this becomes a serious problem in producing a display element of a micro LED.
Disclosure of Invention
The present invention aims to provide a bonding apparatus which can suppress adhesion of dust to a bonding surface and can perform good bonding, and can realize high yield, when bonding a chip, a substrate, or the like having a large number of electrodes to be bonded and a small electrode size.
In order to achieve the above object, a solution of the present invention is a bonding apparatus for bonding a chip having a first electrode (first electrode) and a plate to be bonded having a second electrode (second electrode) so that the first electrode and the second electrode are electrically connected to each other, the bonding apparatus comprising: a laminar flow generating unit (laminar flow source) that generates a laminar flow (laminar flow) from which dust is removed; a chip handling section (chip handling section) that picks up the chip; a cleaning section (cleaning section) for cleaning the chip; a bonding section (bonding stage) having a bonding stage (bonding stage) for bonding the chip to the bonded board; and a transfer mechanism (transfer mechanism) that transfers the chip from the chip processing section to the bonding section, wherein at least the cleaning section and the bonding section are arranged in the laminar flow.
According to the above-described specific matter, adhesion of dust to the chip is suppressed, and good bonding between the chip and the bonded plate can be achieved.
The following configuration is given as a more specific configuration of the joining device. That is, it is preferable that the conveying mechanism has a bonding head (bonding head) that adsorbs (i.e., sucks) the chip, the cleaning unit is provided in a conveying section from the chip processing unit to the bonding unit, and the chip is cleaned while being adsorbed by the bonding head.
Thus, the bonding head as the conveying mechanism can be cleaned together with the chip, and the amount of dust generated by poor bonding caused by the dust on the bonding surface between the bonded plate and the chip can be greatly reduced.
In the bonding apparatus, it is preferable that a holding surface for sucking the bonded plate is provided on the bonding stage, and the laminar flow generating unit generates a laminar flow parallel to the holding surface.
Thus, when the plate to be bonded on the bonding stage and the chip are bonded, the dust can be flowed away by the laminar flow, and the bonding can be performed without the introduction of the dust.
The laminar flow is preferably a horizontal laminar flow when the plate to be joined moves along a horizontal plane, and is preferably a vertical laminar flow when the plate to be joined moves along a vertical plane.
This can significantly reduce the amount of dust that can be introduced into the bonding surface between the bonded plate and the chip and cause a bonding failure.
According to the present invention, even when bonding chips, substrates, and the like, which have a large number of electrodes to be bonded and a small electrode size, is performed, dust can be prevented from adhering to the bonding surfaces thereof, and good bonding can be performed, and high yield can be achieved.
Drawings
Fig. 1 is a front explanatory view showing a bonding apparatus according to a first embodiment of the present invention.
Fig. 2 is a top explanatory view showing a bonding apparatus according to a first embodiment of the present invention.
Fig. 3 (a) and 3 (b) are cross-sectional explanatory views showing the structure of the cleaning section of the bonding apparatus according to the first embodiment of the present invention.
Fig. 4 is a front explanatory view showing a bonding apparatus according to a second embodiment of the present invention.
Fig. 5 is a top explanatory view showing a bonding apparatus according to a second embodiment of the present invention.
Fig. 6 is a front explanatory view showing a bonding apparatus according to a third embodiment of the present invention.
Fig. 7 (a) and 7 (b) are cross-sectional explanatory views showing the structure of the cleaning section of the bonding apparatus according to the third embodiment of the present invention.
Fig. 8 is a front explanatory view showing a bonding apparatus according to a fourth embodiment of the present invention.
Fig. 9 is a top explanatory view showing a bonding apparatus according to a fourth embodiment of the present invention.
Fig. 10 (a) and 10 (b) are cross-sectional explanatory views showing the structure of a cleaning section of a joining device according to a fourth embodiment of the present invention.
Fig. 11 is a front explanatory view showing a bonding apparatus according to a fifth embodiment of the present invention.
Fig. 12 (a), 12 (b), 12 (c), and 12 (d) are cross-sectional explanatory views schematically showing examples of a bonding state of the substrate and the chip.
Detailed Description
Next, a bonding apparatus according to the present embodiment will be described with reference to the drawings.
< first embodiment >
Fig. 1 shows a bonding apparatus 100 according to a first embodiment of the present invention, and is a front explanatory view of the bonding apparatus 100. Fig. 2 is a top explanatory view of bonding apparatus 100, and fig. 3 (a) and 3 (b) are cross-sectional explanatory views showing the configuration of cleaning unit 4 of bonding apparatus 100. Fig. 12 (a) to 12 (d) are cross-sectional explanatory views schematically showing examples of bonding modes of the substrate and the chip.
In addition, each drawing referred to in the following description is a schematic explanatory drawing showing a configuration of the joining device 100 according to the present invention, and specific forms of the case, the conveying portion, and the like are omitted for simplicity and clarity. In fig. 3 (a), 3 (b), and the like, the cleaning portion 4 of the bonding apparatus 100 is schematically illustrated in cross section, and cross-sectional lines showing the cross section are omitted from the constituent members in order to facilitate the view of the drawings. The same applies to fig. 12 (a) to 12 (d).
The bonding apparatus 100 is used for bonding a chip 50 such as a semiconductor chip to a substrate 15 such as a wafer as a bonding target. A large number of circuit elements not shown are formed on the substrate 15. On the surface of the substrate 15, many electrodes (a substrate electrode 15E, a second electrode shown in fig. 12 (a)) are exposed. The chip 15 includes electrodes (a chip electrode 50E and a first electrode shown in fig. 12 a) and is bonded to each circuit element of the substrate 15. The chip electrode 50E is electrically connected to the substrate electrode 15E (flip chip connection).
As shown in fig. 1, the joining device 100 is configured to include: a substrate handling section (substrate handling section) 2, a bonding section (bonding section) 3, a cleaning section (cleaning section) 4, a chip handling section (chip handling section) 5, a housing 6, and the like.
The substrate processing section 2 receives the substrate 15 to be bonded, supplies the substrate to the bonding section 3, and sends out the substrate 15 having been bonded. Generally, the substrate 15 is set in the bonding apparatus 100 in a state of being accommodated in the substrate cassette 13, and after a predetermined substrate 15 in the substrate cassette 13 is processed, the substrate cassette 13 is taken out. Although not shown, the substrate processing unit 2 includes: a substrate transfer tool (14) for moving the substrate 15, and an alignment tool (alignment tool) for determining the position and orientation of the substrate 15.
The chip processing section 5 includes: a chip carrier 40 provided with a plurality of chips 50, a chip pick-up table 45 for picking up the chips 50, and a pick-up head 46 for transferring the chips 50. The chip processing section 5 is a front stage (preparation stage) for receiving a chip carrier 40 for carrying a chip holding material 41 and supplying a chip 50 in the chip carrier 40 to the bonding section 3. The chip holding material 41 is a member for holding the plurality of chips 50, and for example, a tray, an adhesive sheet material (adhesive sheet), or the like is used. For example, a tray cassette, reel, or adhesive sheet cassette is used as the chip carrier 40.
The bonding portion 3 is a device that pushes the chip 50 against the substrate 15 disposed on the bonding stage 17 and performs bonding. The chip 50 is transferred from the chip processing section 5 to the bonding section 3 by the transfer mechanism 12.
The conveying mechanism 12 includes a bonding head 20 for sucking the chip 50 and a transfer hand (transfer hand) 25. In the chip processing unit 5, the bonding head 20 holds the chip 50 and conveys it from the chip processing unit 5 by the moving hand 25. In the joint 3, a joint head 20 is connected to a head driving section 18 for driving it.
The bonding head 20 has a suction portion (suction means) for sucking the chip 50, and may have a heat source for heating the chip 50, an antenna function for supplying ultrasonic waves to the chip 50, and the like. The head driving section (head driving section) 18 has a function of moving the bonding head 20, and also has a power supply for holding and driving the bonding head 20 and an application device such as a vacuum mechanism (vacuum source).
The bonding head 20 has an application connection portion on a surface opposite to the surface for sucking the chip 50 in order to receive supply of an application such as a power supply and a vacuum mechanism from the head driving portion 18. Specifically, the application device connecting portion is a connector for connecting a power source, a coupler for connecting a vacuum, or the like. The chip 50 adsorbed to the bonding head 20 is bonded to the substrate 15 on the bonding stage 17 by the head driving unit 18.
The bonding stage 17 includes a holding surface (hold surface) for sucking and fixing the substrate 15 to a vacuum chuck (vacuum chuck) or an electrostatic chuck (electro-static chuck). In this case, the holding surfaces of the bonding stage 17 are arranged in the horizontal direction so that the substrate 15 can move in the horizontal direction. The bonding stage 17 may have a function of heating or cooling the substrate 15.
The bonding portion 3 needs to precisely align the substrate 15 and the chip 50, and includes a position sensor for measuring a positional deviation between corresponding electrodes of the substrate 15 and the chip 50. Thus, the bonding section 3 has a function of feeding back a signal of the position sensor and finely adjusting the positions of the bonding stage 17 and the head driving section 18. Generally, a position sensor can measure a positional deviation by processing an image obtained from a camera using visible light or infrared light. The camera may be provided on the bonding stage 17 side to monitor the substrate 15 from below, or may be provided above the bonding stage 17.
A cleaning unit 4 is provided between the bonding unit 3 and the chip processing unit 5. The cleaning unit 4 cleans and removes the adhering matter such as dust adhering to the chip 50. The cleaning unit 4 includes a cleaning chamber 30. As shown in fig. 3 (a) and 3 (b), the cleaning chamber 30 includes: a bowl-shaped or bottomed box-shaped cleaning cup 31, and a door 35 for closing the upper part of the cleaning cup 31.
The cleaning cup 31 includes: a cleaning agent nozzle (cleaning agent nozzle) 33 for supplying a cleaning agent, and an outlet for discharging the cleaning agent (cleaning agent) and dust after cleaning. In the illustrated embodiment, the first cleaning agent discharge port 32 and the second cleaning agent discharge port 34 are provided as discharge ports. Of them, the first cleaning agent discharge port 32 is provided for discharging the cleaning agent accumulated on the bottom of the cleaning cup 31, and the second cleaning agent discharge port 34 is provided for discharging the cleaning agent splashed back by the bonding head 20. A seal ring 36 is disposed at a contact portion between the cleaning cup 31 and the door 35.
These respective constituent components of the joining device 100 are received in the internal space inside the housing 6. The housing 6 is provided to surround the outer periphery of the bonding apparatus 100, and includes an unillustrated opening/closing door for allowing the substrate 15 and the chip 50 to enter and exit. The opening/closing door can be opened and partially opened at the time of maintenance of the joining device 100. The housing 6 is preferably formed using a material that prevents generation of static electricity.
The joining device 100 is provided with a laminar flow generating unit 1 that generates a dust-removed laminar flow 11. As shown in fig. 1, the laminar flow generating section 1 is disposed in the ceiling portion of the joining device 100. The substrate processing unit 2, the bonding unit 3, the cleaning unit 4, and the chip processing unit 5 provided in the housing 6 are all disposed so as to be covered by the laminar flow generating unit 1 below the laminar flow generating unit 1.
The laminar flow generating unit 1 includes a HEPA filter 10, and supplies the dust-removed laminar flow 11 having passed through the HEPA filter 10 to the above-described parts such as the substrate processing unit 2. As shown in fig. 1, in the bonding apparatus 100 according to the present embodiment, each component from the substrate processing section 2 to the chip processing section 5 is provided in the laminar flow of the laminar flow generating section 1 that flows downward.
Preferably, the HEPA filter 10 provided in the laminar flow generating section 1 completely removes at least dust having a size of 1 μm or more, and also removes dust having a size of 0.1 μm or more. Further, the laminar flow 11 is not necessarily supplied to the chip processing unit 5 as long as dust does not enter the cleaning unit 4 from the chip processing unit 5.
(operation of the bonding apparatus 100)
In the bonding apparatus 100 configured as described above, in the chip handling section 5, the chip holding material 41 is taken out from the chip carrier 40 by the chip holding material transfer section (chip holding material transfer section) 42 and placed on the chip pickup stage 45. The chip 50 is picked up from the chip holding material 41 by the pickup head 46 and transferred to the bonding head 20 held by the moving hand 25. The chip pickup stage 45 has a moving function of moving each chip 50 on the chip holding material 41 to a position of the pickup head 46.
As shown in fig. 1, on the chip pickup stage 45, the chip 50 is arranged such that the electrode surface having the chip electrode 50E (see fig. 12 a) faces upward with respect to the chip holding material 41 (face-up). In this case, the pickup head 46 is brought into contact with the electrode surface of the chip 50 by a clip or the like to hold the chip 50. Further, the pick-up head 46 holds the chip 50 moving upward and rotating 180 degrees.
The bonding head 20 attracts a surface (non-electrode surface) opposite to the electrode surface of the chip 50. Thereby, the chip 50 is transferred to the bonding head 20. When the electrode surface of the chip 50 is placed face down (face down) on the chip holding member 41, the pickup head 46 may be configured such that the non-electrode surface of the chip 50 is directly sucked by the bonding head 20 and is not lifted as it is. In the chip processing section 5, the bonding head 20 holding the chip 50 is carried to the cleaning chamber 30 by the moving hand 20.
When the chip 50 is carried to the cleaning section 4, as shown in fig. 3 (b), the door 35 of the cleaning chamber 30 is lifted, and the moving hand 25 carries the bonding head 20 into the cleaning chamber 30. Subsequently, the bonding head 20 is transferred from the moving hand 25 to the door 35. The door 35 adsorbs and holds the bonding head 20 by a vacuum chuck, an electrostatic chuck, or the like. In order to rotate the joint 20 during cleaning, a rotary table may be provided on the door 35, and the joint 20 may be held by the door 35 by sucking the joint 20 onto the rotary table.
When the chip is transferred to the door 35, the door 35 is closed. As shown in fig. 3 (a), the cleaning chamber 30 is sealed by pressing the door 35 against the gasket 36, and cleaning of the chip 50 is started. Cleaning is performed by spraying a cleaning agent from the cleaning agent nozzle 33 to the chip 50 and the bonding head 20 to remove dust and the like adhering to the surface. The cleaning agent, dust, and the like are sucked to and discharged from the first cleaning agent discharge port 32 and the second cleaning agent discharge port 34. After the cleaning, the cleaning chamber 30 may be purged with clean air, nitrogen gas, or the like.
Various materials and methods having dust removing ability can be applied to the cleaning agent and the cleaning method of the cleaning section 4. For example, dry ice scrubbing by spraying dry ice particles, blowing of clean air, a combination of an alkaline chemical solution and ultrasonic waves, an organic solvent, or the like, or a plurality of these can be used in combination. Therefore, the cleaning agent nozzle 33 provided in the cleaning chamber 30 is not limited to one, and a plurality of nozzles may be provided, or a cleaning nozzle may be included. Similarly, a plurality of first cleaning agent discharge ports 32 and a plurality of second cleaning agent discharge ports 34 may be provided.
When the cleaning of the chip 50 is completed, the bonding head 20 is carried out from the cleaning chamber 30 through a path opposite to the path at the time of the transfer. This enables removal of dust and the like adhering to both the chip 50 and the bonding head 20.
The bonding head 20 holding the chip 50 is carried to the bonding portion 3 by the moving hand 25. As shown in fig. 1 and 2, in the bonding portion 3, a bonding head 20 is attached to a head driving portion 18, and a bonding process between a chip 50 and a substrate 15 is performed.
The bond head 20 needs to continuously hold the chip 50 during the bonding process. For example, in the case where the holding of the chip 50 is based on a vacuum chuck, the moving hand 25 always holds the bonding head 20, and the vacuum can be continuously supplied from the moving hand 25. Alternatively, a vacuum supply pipe may be directly connected to the bonding head 20. Similarly to the case where the chip 50 is held by the electrostatic chuck, static electricity may be supplied from the moving hand 25, or the electrostatic chuck may be caused to function by the bonding head 20 alone by mounting a capacitor to the bonding head 20 and charging the capacitor.
On the bonding stage 17, the substrate electrode 15E of the electrode 15 is connected to the chip electrode 50E of the chip 50, and the substrate 15 is bonded to the chip 50. As the connection method, various connection methods are possible as follows: gold-gold connection in which gold bumps are connected to gold electrodes, connection in which an Anisotropic Conductive Film (ACF), an anisotropic conductive resin is disposed between both electrodes, a combination of bumps and a non-conductive polymer (NCP), connection by nanoparticles, or the like. On the substrate electrode 15E of the substrate 15, a connection material (connection material) 60 such as an arrangement of protrusions and nanoparticles, ACF attachment, or NCP application is prepared according to such various connection methods.
The substrate processing unit 2 may perform the step of forming the connecting member 60. Since the substrate processing section 2 has the function of forming the connecting member 60, the time from the formation of the connecting member 60 to the connection can be shortened. Therefore, the temporal change of the joining material 60 can be suppressed. Therefore, quality control of the connecting member 60 becomes easy. Further, the connection material 60 having a short service life can be used, and the selection range of the connection material 60 can be expanded. As a result, for example, an advantage is obtained that the manufacturing cost can be reduced by using the inexpensive connecting material 60.
(dust management)
Next, the following describes dust management of the bonding apparatus 100 for suppressing adhesion of dust to the bonding surface and enabling good bonding.
Since the substrate 15 is subjected to dust control during the manufacturing process, the number of dust adhering to the surface of the substrate 15 is small, and it is difficult for the dust on the substrate 15 to become a large problem. On the other hand, dust adheres to the chip 50 at the stage of being taken into the chip processing section 5 due to various causes, and if the chip is directly transferred to the bonding step, a bonding failure may occur, and the bonding between the substrate 15 and the chip 50 may be low in yield.
Now, the types of dust and the failure modes will be described with reference to fig. 12 (a) to 12 (d).
Fig. 12 shows a favorable bonding form of the substrate 15 and the chip 50. The substrate electrode 15E is formed on the substrate 15, the chip electrode 50E is formed on the chip 50, and the electrode space S is secured as the interval between the adjacent electrodes, respectively, according to the electrode size L. The substrate electrode 15E and the chip electrode 50E are connected via a connecting material 60. The substrate 15 and the chip 50 are bonded with a gap G therebetween. The ideal gap G is the sum of the thickness of the connecting material 60, the height of the substrate electrode 15E from the surface of the substrate 15, and the height of the chip electrode 50E from the surface of the chip 50.
Fig. 12 (b) shows a bonding state in which dust 70 is attached to the chip 50. In this case, insulating dust having a size equal to or larger than the electrode size (short side or short diameter) L adheres between the chip 50 and the substrate 15. This causes a connection failure between the substrate electrode 15E and the chip electrode 50E.
Fig. 12 (c) shows a bonding state in which dust 70 adheres to the chip electrodes 50E. Since the dust 70 has a larger diameter than the gap G, a necessary or more space is formed between the substrate 15 and the chip 50. This causes a connection failure between the substrate electrode 15E and the chip electrode 50E, or a break in the chip 50.
Fig. 12 (d) shows a bonding mode in which the conductive dust 70 having a width equal to or larger than the electrode space S is attached to the chip 50E. In this case, the substrate electrodes 15E are short-circuited by the conductive dust 70, and a connection failure occurs.
In order to prevent such connection failure as shown in fig. 12 (b) to 12 (d), it is necessary to reduce dust larger than the minimum value of the electrode size L, the electrode space S, and the gap G. The electrode dimension L and the electrode space S are approximately about 1 μm to several tens of μm, and the gap G is about several hundreds nm to several tens of μm. Therefore, in the bonding apparatus 100, it is desirable to take countermeasures against dust as small as several hundred nm in size. In addition, by bonding the substrate 15 and the chip 50 after reducing such dust, the bonding yield can be improved.
Therefore, the following technical items (1) to (3) are important.
(1) The air in the bonding apparatus 100 is kept clean, and dust from the outside of the bonding apparatus 100 is prevented from adhering to the substrate 15 and the chip 50.
(2) The cleaning unit 4 removes dust adhering to the electrode surface of the chip 50.
(3) The generation of dust in the bonding apparatus 100 is suppressed, and the generated dust is prevented from adhering to the surface of the substrate 15.
In the case of the examination, in the joining apparatus 100 of the present embodiment, since the entire casing 6 encloses the inside thereof and the inside thereof is immersed in the laminar flow 11, the penetration of dust from the outside into the joining apparatus 100 is prevented. Thus, the above technical item (1) is achieved.
Further, by providing the cleaning unit 4, dust adhering to the chip 50 and dust adhering to the bonding head 20 holding the chip 50 can be removed. Thus, the above technical item (2) is achieved.
Next, the generation of dust in the bonding apparatus 100 was examined. Generally, the side surfaces of the chip 50 are fracture surfaces, and the non-electrode surfaces are not polished smooth. Therefore, if there is an object in contact with the chip 50, dust is likely to be generated, and dust may be generated each time the chip 50 is held or detached.
In the present embodiment, since the chip 50 is transported in a state of being adsorbed to the bonding head 20, after the chip 50 is picked up by the pickup head 46 and transferred to the bonding head 20, there is no object newly in contact with the chip 50. In this way, the chip 50 itself is moved by the bonding head 20 without being in direct contact with the chip 50, and thus generation of dust can be greatly suppressed. For example, the material and surface state of the bonding head 20 can be made hard to generate dust by mirror polishing or the like. In addition, the contact portion of the moving hand 25 that contacts the bonding head 20 can be also significantly reduced in dust generation as compared with the case of directly holding the chip 50 by taking measures such as using a resin material that is less likely to generate dust.
The pickup head 46 directly holds the chip 50 by a clip or the like and hands over the chip 50 to the bonding head 20, and therefore dust adhesion cannot be avoided. Since the bonding head 20 is likely to have dust attached thereto when receiving the chip 50, it can be said that cleaning the bonding head 20 is an important issue.
In the present embodiment, since the cleaning unit 4 cleans not only the chip 50 but also the bonding head 20 at the same time, dust adhering to the bonding head 20 in the chip processing unit 5 can also be reduced.
Dust may adhere to the surface of the bonding head 20 due to contact with the chip 50, and may fall onto the substrate 15 after bonding of the chip 50. Therefore, it is preferable to clean the surface of the bonding head 20 at a predetermined frequency. In this respect, in the present embodiment, the cleaning unit 4 can also clean the surface of the bonding head 20 after bonding. Thus, the above technical item (3) is also achieved.
As described above, in the bonding apparatus 100 according to the present embodiment, since the dust management is achieved as described above, it is possible to suppress adhesion of dust to the bonding surfaces of the substrate 15 and the chip 50, and to enable good bonding of these.
In contrast to conventional bonding apparatuses in which chips or substrates to which several thousand electrodes are connected are used for connection of circuit elements or chips of such substrates, the present bonding apparatus 100 can be used for bonding even chips or substrates having a small electrode size L as shown in fig. 12 (a) in which the number of electrodes for connection of circuit elements or chips 50 of the substrate 15 exceeds ten thousand. The bonding apparatus 100 according to the present embodiment can be a target of bonding even when the electrode size L is 20 μm or less, for example.
In the present embodiment, one moving hand 25 is included as the conveying mechanism 12 of the chip 50, but a plurality of moving hands 25 may be provided so that one is provided between the cleaning unit 4 and the chip processing unit 5 and one is provided between the cleaning unit 4 and the bonding unit 3. As the conveying mechanism 12 for the chips 50, a continuous conveying mechanism such as a conveyor having a plurality of moving hands 25 may be provided.
In fig. 1, the substrate processing unit 2, the bonding unit 3, the cleaning unit 4, and the chip processing unit 5 are arranged side by side, but various planar arrangements other than the planar arrangement illustrated in fig. 2 are possible in consideration of compactness of the apparatus, reduction in the number of transfer machines, ease of maintenance, and the like. In addition, in order to increase the throughput, a plurality of cleaning chambers 30 may be provided in the cleaning unit 4 to prevent the throughput from decreasing due to the speed limit of the cleaning process. Alternatively, a combination of a plurality of bonding heads 20 and chips 50 may be processed simultaneously in one cleaning chamber 30. In the bonding apparatus 100 according to the present embodiment, since a plurality of bonding heads 20 are required, a pedestal (stock) portion of the bonding head 20 may be provided in the housing 6.
< second embodiment >
Fig. 4 and 5 show a bonding apparatus 100 according to a second embodiment of the present invention, fig. 4 is a front explanatory view of the bonding apparatus 100, and fig. 5 is a plan explanatory view of the bonding apparatus 100.
In the embodiments described below, since the basic configurations are common to the first embodiment, the common configurations are denoted by the reference numerals common to the first embodiment, and detailed descriptions thereof are omitted.
In the first embodiment, the laminar flow generating section 1 is provided in the ceiling section, and each component is disposed in the laminar flow flowing downward. In contrast, in the joining device 100 according to the present embodiment, the laminar flow generating unit 1 is characterized in that each component is disposed in the horizontal laminar flow 11.
As shown in fig. 4 and 5, the laminar flow generating portion 1 is disposed on one side surface of the joining device 100. The components of the substrate processing section 2, the bonding section 3, the cleaning section 4, the chip processing section 5, and the transfer mechanism 12 are common to the bonding apparatus 100 according to the first embodiment.
In this case, the substrate processing unit 2, the joining unit 3, and the cleaning unit 4 are preferably arranged in this order from the upstream side of the horizontal laminar flow 11h. A horizontal laminar flow 11h is formed in the housing 6. When the head drive unit 18 moves up and down in the joining step and the joining head 20 is moved away from the head drive unit 18 after joining is completed, dust easily falls. However, in the bonding apparatus 100 according to the present embodiment, since the bonding portion 3 and the like are disposed in the horizontal laminar flow 11h, dust is flowed away even if the dust falls, and the dust can be prevented from falling and adhering to the surface of the substrate 15. While the wafer processing unit 5 is moved to the bonding unit 3 through the cleaning unit 4, the electrode surface (downward) of the wafer 50 is flowed with the horizontal laminar flow 11h. Therefore, dust can be prevented from adhering to the chip 50 during movement.
According to the bonding apparatus 100 of the present embodiment, the number of dust particles that are generated due to poor bonding by being introduced into the bonding surface between the substrate 15 and the chip 50 can be greatly reduced, and the bonding yield between the substrate 15 and the chip 50 can be improved.
< third embodiment >
Fig. 6, 7 (a) and 7 (b) show a bonding apparatus 100 according to a third embodiment of the present invention, fig. 6 is a front explanatory view, and fig. 7 (a) and 7 (b) are cross-sectional explanatory views showing the cleaning unit 4.
The bonding apparatus 100 according to the third embodiment is characterized in the method of conveying the chip 50 and the cleaning chamber 30 with respect to the bonding apparatus 100 according to the first embodiment. That is, in the first embodiment, the chip 50 is configured to be moved and cleaned in a state of being adsorbed to the bonding head 20, but in the present embodiment, the chip 50 is configured to be moved and cleaned as a single body. Such a configuration is suitable when the chip 50 is relatively large, and when the non-electrode surface of the chip is polished smoothly and dust generation is small.
The joining apparatus 100 includes a moving hand (second moving hand) 26 as the conveying mechanism 12. As shown in the enlarged view of part a of fig. 6, the hand 26 has a suction part (sucking part) 261 for sucking the non-electrode surface (surface without the chip electrode 50E) of the chip 50.
The suction portion 261 is provided at the distal end portion of the moving hand 26 and is formed to have a width smaller than the chip width (length in the left-right direction in each of fig. 12). In the illustrated embodiment, the moving hand 26 has a thin and thin overall shape like a blade, and is configured to attract the chip 50 by a vacuum chuck or an electrostatic chuck via the attracting portion 261.
The moving hand 26 holds and moves the chip 50, or separates the chip 50 at a predetermined position. The movement of the chip 50 is performed in a state of being adsorbed to the fine-blade-shaped moving hand 26. The moving hand 26 moves among the chip processing unit 5, the cleaning unit 4, and the bonding unit 3, and separates (dechuck) the conveyed chip 50.
A groove (groove) 461 into which the tip portion of the moving hand 26 can be inserted is provided in the pickup head 46 of the chip processing section 5 in correspondence with the moving hand 26. In addition, a groove portion 201 into which the tip end portion of the moving hand 26 can be inserted is also provided in the joint head 20 disposed in the joint portion 3.
In the cleaning section 4, the chip 50 is separated from the moving hand 26 in the cleaning chamber 30 and is directly cleaned. As shown in fig. 7 (a), the cleaning chamber 30 of the cleaning section 4 receives the chip 50 from the moving hand 26, and includes a cleaning table 39 for holding the chip, and a support 38 for supporting the cleaning table 39 in the cleaning chamber 30. The cleaning table 39 is disposed in the cleaning cup 31, and cleans the chip 50 on the cleaning table 39. A groove 391 into which the tip of the hand 26 is inserted is provided on the upper surface of the cleaning stage 39. The support 38 is provided upright on the bottom of the cleaning cup 31 and is provided so as to be vertically extendable and retractable.
When the chip 50 is carried to the cleaning section 4, the door 35 is opened as shown in fig. 7 (b), and the cleaning table 39 is lifted up above the cleaning cup 31 by the support 38. The chip 50 moved onto the wash table 39 by the moving hand 26 is detached from the moving hand 26 and disposed on the wash table 39. The cleaning table 39 adsorbs and fixes the non-electrode surface of the chip 50.
When the transfer of the chip 50 is completed, the cleaning table 39 is returned to the bottom of the cleaning chamber 30, the door 35 is closed, and the cleaning is started. The cleaning chamber 30 is sealed by the packing 36, and has the cleaning agent nozzle 33 and the first and second cleaning agent discharge ports 32 and 34, and the like, which are common to the first embodiment, but it is preferable to change the arrangement direction of the cleaning agent nozzle 33 and the second cleaning agent discharge port 34 in accordance with the cleaning operation performed on the bottom of the cleaning cup 31. The support 38 may have a rotating function in addition to the function of moving the wash table 39 up and down.
From the chip processing section 5 to the cleaning section 4, the hand 26 is inserted into the groove 461 of the pickup head 46, and is attracted to the non-electrode surface of the chip 50, and the chip 50 is picked up and transported to the cleaning chamber 30 of the cleaning section 4. At this time, the electrode surface of the chip 50 is upward. After the cleaning by the cleaning unit 4, the chip 50 is transferred from the cleaning chamber 30 to the bonding head 20. At this time, the moving hand 26 is horizontally moved and rotated by 180 degrees, and the chip 50 is turned over to face the electrode downward. In the bonding section 3, the moving hand 26 is inserted into the groove 201 of the bonding head 20 fixed to the head driving section 18, and after the chip 50 is transferred to the bonding head 20, the moving hand 26 is disengaged.
According to the bonding apparatus 100 of the present embodiment, the number of dust particles that are caused by poor bonding by being introduced into the bonding surface between the substrate 15 and the chip 50 can be greatly reduced, and the bonding yield between the substrate 15 and the chip 50 can be improved.
< fourth embodiment >
Fig. 8 is a front explanatory view showing a bonding apparatus 100 according to a fourth embodiment of the present invention, and fig. 9 is a top explanatory view. Fig. 10 (a) and 10 (b) are cross-sectional explanatory views showing the structure of the cleaning unit 4.
The bonding apparatus 100 according to the fourth embodiment is characterized in that the substrate 15 is bonded to the chip 50 in a standing state, as compared to the bonding apparatus 100 according to the first embodiment. That is, in the present embodiment, for example, the laminar flow 11 flowing downward of the laminar flow generating unit 1 shown in the first embodiment is used, and it is desired to realize the dust reducing function shown in the second embodiment.
As shown in fig. 8 and 9, the substrate processing unit 2 includes a substrate rotating unit 16 that rotates the substrate 15 from a horizontal direction (Y-axis direction in fig. 8) to a vertical direction (Z-axis direction in fig. 8). The substrate moving unit 14 moves the substrate 15 standing in the vertical direction between the substrate processing unit 2 and the bonding unit 3 to the bonding stage 17 of the bonding unit 3.
In the bonding stage 3, the holding surface of the bonding stage 17 is arranged in the vertical direction (direction parallel to the Y-Z plane), the substrate 15 is held in parallel to the Z axis, and the substrate 15 can be moved in the vertical direction. As shown in fig. 9, the head driving unit 18 is disposed in the X-axis direction and is movable in the X-axis direction.
As shown in fig. 8, a vertical moving hand 27 is provided between the cleaning section 4 and the joint section 3. The vertical moving hand 27 carries the bonding head 20 in a vertical state as opposed to the moving hand 25 carrying the bonding head 20 in a horizontal direction. The other vertical moving hand 27 is common to the moving hand 25.
As shown in fig. 10 (b), the door 35 is configured to be openable by being rotated 90 degrees from a state of being vertically moved upward in the cleaning section 4. That is, the door 39 can be rotated from the horizontal direction to the vertical direction. As shown in fig. 10 (a), cleaning chamber 30 receives joint head 20 held by moving hand 25, and sucks and holds it to door 35.
After the chip 50 and the bonding head 20 are cleaned, as shown in fig. 10 (b), the bonding head 20 is held by the vertical moving hand 27 in a state where the door 35 is opened, and is transported to the head driving section 18 of the bonding section 3. In this configuration, the orientation of the bonding head 20 differs between the bonding unit 3 and the cleaning unit 4 in the vertical direction and between the cleaning unit 4 and the chip processing unit 5 in the horizontal direction, and therefore a mechanism for changing the orientation of the bonding head 20 is required. In the present embodiment, the orientation of bonding head 20 is changed by the opening and closing operation of cleaning unit 4, which has an advantage that no separate mechanism is required.
The laminar flow 11 flowing downward is always made to flow on the electrode surfaces of the substrate 15 and the chip 50, so that dust is prevented from adhering to the electrode surfaces and is normally held. Even if dust is generated from the surfaces of the head driving unit 18 and the bonding head 20, the dust flows downward due to the laminar flow 11 flowing downward, and adhesion to the surface of the substrate 15 can be prevented.
Therefore, according to the bonding apparatus 100 of the present embodiment, the number of dust particles that are caused by poor bonding by being introduced into the bonding surface between the substrate 15 and the chip 50 can be greatly reduced, and the bonding yield between the substrate 15 and the chip 50 can be improved. The structure according to the present embodiment also effectively functions with respect to large dust that is affected by gravity.
< fifth embodiment >
Fig. 11 is a front explanatory view showing a bonding apparatus according to a fifth embodiment of the present invention. In the joining device 100 according to the fifth embodiment, the laminar flow generating unit 1 forms the horizontal laminar flow 11h, as in the second embodiment. Further, the joining device 100 is characterized in that: the bonding stage 17 has a holding surface on its lower surface, and the bonding head 20 is pushed from below the bonding stage 17 and bonded.
The substrate processing unit 2 includes a substrate transfer unit 14 for transferring the substrate 15, and a substrate reversing unit 19 for rotating the transferred substrate 15 by 180 degrees. The substrate inverting unit 19 has a function of rotating the substrate in the vertical direction similarly to the substrate rotating unit 16, although the rotation angle is different. The substrate 15 has an electrode face up and is arranged in the substrate cassette 13.
In the substrate processing section 2, the electrode surface is turned upside down by the substrate turning section 19 after being taken out from the substrate cassette 13 by the substrate moving section 14. Thereafter, the substrate 15 is conveyed from the substrate processing unit 2 to the bonding unit 3 with the electrode surface facing downward. In the joining section 3, the joining table 17 is disposed in the horizontal laminar flow 11h with the holding surface facing downward.
In the bonding stage 17, the chip 50 is transferred from the pickup head 46 to the bonding head 20 in the chip processing section 5. While the chip 50 is being transported from the cleaning unit 4 to the bonding unit 3, the chip is still turned upside down integrally with the bonding head 20 by the turning unit 28. The bonding head 20 is held by the moving hand 25 with the chip 50 being on the upper surface, and is attached to the head driving unit 18 provided below the bonding stage 17. The head driving section 18 connects and drives the joint head 20 from below to the joint head 20.
According to the bonding apparatus 100 of the present embodiment, the number of dust particles that are caused by poor bonding by being introduced into the bonding surface between the substrate 15 and the chip 50 can be greatly reduced, and the bonding yield between the substrate 15 and the chip 50 can be improved. In particular, in the configuration according to the present embodiment, even if dust is generated from the substrate processing unit 2 to the bonding unit 3 by the vertical movement of the head driving unit 18, the dust can be prevented from falling onto the substrate 15. At the same time, dust remaining on the substrate 15 can be removed.
The present invention is not limited to the above embodiments, and various modifications can be made within the scope of the claims, and embodiments obtained by appropriately combining technical means disclosed in different embodiments are also included in the technical scope of the present invention. Further, by combining the technical means disclosed in the respective embodiments, new technical features can be formed.
In the above description of the embodiments, the bonding of the chip such as the semiconductor chip and the substrate such as the wafer has been described, but the present invention is not limited thereto, and the present invention can also be applied to the bonding of the chip and the chip. Further, the chip in this case is not limited to a micro LED or the like.
< example >
As an example, the following display element was produced by the bonding apparatus 100 according to the present invention: a blue micro LED display element (monochrome) having a pixel number of 240 × 427 (about 100K pixels) and a pixel size of 10 μm square, a display portion having a size of 2.4mm × 4.3mm, and a driving circuit LSI having a size of 4mm × 6 mm. The number of driver circuit LSIs is 1080, which are formed on an 8-inch wafer.
In addition, as a comparative example, display elements were fabricated by conventional general flip-chip bonding with respect to 918 driver circuit LSIs that were found to be good products in the test, and the number of good products that emitted light for all pixels was 128, and the yield was about 14% at a very low level.
In the bonding apparatus 100, the following two cleaning methods are performed.
(A) Alkaline solution cleaning (cleaning for wafer cleaning)
Using a mixture of ammonia (NH) as a cleaning agent 4 OH) and hydrogen peroxide (H) 2 O 2 ) The alkaline cleaning liquid (2) is subjected to ultrasonic waves through a cleaning agent nozzle, and cleaning, pure water cleaning, and nitrogen gas blowing drying are performedAnd (5) drying.
(B) Blasting with dry ice
As the cleaning agent, dry ice snow formed by thermally expanding liquefied carbonic acid gas was blown with nitrogen gas, and fine particles of dry ice were collided with the surface of the chip at high speed. Dry ice is gasified, so that there is no drying residue, and a drying step is not required as in the case of using an aqueous solution or a solvent, and there is an advantage that the treatment time is short.
The yields obtained when the cleaning methods (a) and (B) were performed were 61% and 67%, respectively, and the yield could be increased by 4 to 4.8 times by either of the cleaning methods. In this manner, by using the bonding apparatus 100, the yield of defect-free display elements can be significantly improved. When the pixels are reduced in size and color display is performed, the size of the electrodes is reduced and the number of electrodes is increased, and therefore, the effect is expected to be further increased.
Therefore, according to the bonding apparatus 100 of the present invention, the number of dust particles that are caused by poor bonding by being introduced into the bonding surface between the substrate and the chip can be greatly reduced, and the bonding yield between the substrate and the chip can be improved.
The present invention may be embodied in other various forms without departing from its spirit or essential characteristics. Therefore, the above embodiments are merely illustrative in all aspects and are not to be construed restrictively. The scope of the invention is indicated in the claims, and is not limited in any way by the text of the specification. Further, all modifications and changes falling within the equivalent range of the scope of claims are included in the scope of the present invention.

Claims (19)

1. A bonding apparatus for bonding a chip having a first electrode and a plate to be bonded having a second electrode so that the first electrode and the second electrode are electrically connected to each other,
the joining device is characterized by comprising:
a laminar flow generator that generates a laminar flow from which dust is removed;
a chip processing section that picks up the chip;
a cleaning unit for cleaning the chip;
a bonding portion having a bonding stage for bonding the chip to the bonded board; and
a conveying mechanism for conveying the chip from the chip processing portion to the bonding portion,
at least the cleaning portion and the joining portion are provided in the laminar flow,
the carrying mechanism has at least one bonding head that adsorbs the chip,
the cleaning unit is provided in a conveyance section from the chip processing unit to the bonding unit, and the chip is cleaned while being adsorbed to the bonding head.
2. The joining device of claim 1,
the carrying mechanism has a plurality of the bonding heads.
3. The joining device of claim 1,
the cleaning portion has a cleaning cup, and a door closing an upper portion of the cleaning cup, the door holding the engagement head.
4. The joining device according to claim 1,
the bonding head has an application device connecting portion on a face on a side opposite to a face on which the chip is adsorbed.
5. The joining device of claim 1,
the carrying mechanism has a first moving hand that holds the bonding head and moves the bonding head.
6. The joining device of claim 1,
the conveying mechanism includes a second moving hand that holds and moves the chip, and the second moving hand separates the chip that has been conveyed in each of the chip processing unit, the cleaning unit, and the bonding unit.
7. The joining device of claim 6,
the cleaning part includes a cleaning cup, a door closing an upper portion of the cleaning cup, and a cleaning table holding the chip.
8. The joining device of claim 6,
the second moving hand turns the chip over by rotating 180 degrees between the washing part and the bonding part.
9. The joining device of claim 6,
the second moving hand has a suction portion at a distal end portion thereof for sucking a surface without the first electrode of the chip, and the suction portion is smaller than the chip.
10. The joining device of claim 1,
the joining table is provided with a holding surface for sucking the joined plate, and the laminar flow generating unit generates a laminar flow parallel to the holding surface.
11. The joining device of claim 10,
the joined plates move along a horizontal plane, and the laminar flow is a horizontal laminar flow.
12. The joining device of claim 10,
the engaged plates move along a vertical plane, and the laminar flow is a vertical laminar flow.
13. The joining device of claim 7,
the cleaning part includes a cleaning cup, and a door closing an upper portion of the cleaning cup, the door rotating from a horizontal direction to a vertical direction, the door holding the joint head.
14. The joining device of claim 10,
the bonding stage is provided with the holding surface facing downward, and the bonding head includes a turning section for turning over the held chip.
15. The joining device of claim 1,
the laminar flow is provided with a substrate processing unit that receives the bonded plates, supplies the bonded plates to the bonding unit, and sends the bonded plates out.
16. The joining device of claim 15,
the substrate processing portion has a function of forming a connecting material on the bonded substrate, wherein the connecting material electrically connects the first electrode and the second electrode.
17. The joining device of claim 15,
the substrate processing unit has a function of rotating the substrate in a vertical direction.
18. The joining device according to any one of claims 1 to 17,
the cleaning section has a nozzle that ejects a cleaning agent for cleaning the chip.
19. The joining device of claim 18,
the cleaning agent comprises dry ice.
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