CN110233100A - The method for grinding of machined object - Google Patents
The method for grinding of machined object Download PDFInfo
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- CN110233100A CN110233100A CN201910150730.2A CN201910150730A CN110233100A CN 110233100 A CN110233100 A CN 110233100A CN 201910150730 A CN201910150730 A CN 201910150730A CN 110233100 A CN110233100 A CN 110233100A
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- machined object
- grinding
- metamorphic layer
- ground
- peripheral portion
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- 238000000034 method Methods 0.000 title claims abstract description 67
- 230000002093 peripheral effect Effects 0.000 claims abstract description 100
- 230000035699 permeability Effects 0.000 claims abstract description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 230000011218 segmentation Effects 0.000 claims description 12
- 239000010410 layer Substances 0.000 description 31
- 238000005520 cutting process Methods 0.000 description 10
- 238000003754 machining Methods 0.000 description 8
- 229910001651 emery Inorganic materials 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000003698 laser cutting Methods 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
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- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003673 groundwater Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02016—Backside treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
Abstract
The method for grinding for providing machined object is able to suppress the generation of edge chipping and chip slight crack in the case where being ground to machined object not removing the peripheral part of machined object.The method for grinding includes: utilizing the process in the front (Wa) of guard block (T) covering machined object (W)；From the back side side (Wb) of machined object in the process that the position of defined distance in the inner part than outer peripheral edge (Wd) has the laser of permeability for machined object along the rounded irradiation in outer peripheral edge and forms metamorphic layer (M)；The process for keeping the guard block for the machined object for being formed with metamorphic layer using workbench (70)；It is ground the back side of machined object and makes machined object shape completion thickness, and the process that machined object is divided into as starting point by inner peripheral portion (W1) and peripheral part (W2) using the metamorphic layer formed along outer peripheral edge at the time of the thickness of machined object reaches metamorphic layer, machined object is divided into inner peripheral portion and peripheral part by being overleaf ground midway, prevents chipping and slight crack from traveling to the device area (Wa1) of inner peripheral portion.
Description
Technical field
The present invention relates to the methods being ground to machined objects such as semiconductor wafers.
Background technique
In semiconductor devices manufacturing process, clathrate formation is utilized on the front of the machined object of circular plate shape
The segmentation preset lines of referred to as spacing track mark off multiple rectangular areas, are respectively formed device circuitry in the rectangular area.Pass through
The machined object for being formed with multiple devices in this way is split along segmentation preset lines, forms each semiconductor core
Piece.Also, for the miniaturization and lightweight for realizing semiconductor chip, usually along segmentation preset lines cutting machined object and
Before separating each rectangular area, the back side of machined object is ground and thinning is defined thickness.
The case where there are step differences at the edge of positive peripheral part of machined object or the edge shape of machined object
In the case where for special shape (such as section is pointed shape), sometimes in the grinding of the back side of machined object, outside machined object
The edge of circumference generates chipping or the crackle from edge extends towards inner peripheral portion and generates chip slight crack.
As its countermeasure, it is known to following method for grinding: the outer peripheral edge than machined object in the inner part as defined in distance
Position have along the rounded irradiation in outer peripheral edge for machined object permeability wavelength laser beam, by machined object point
Be cut into inner peripheral portion and around inner peripheral portion peripheral part and by peripheral part from machined object remove.Then, it carries out back side grinding and makes
Machined object (inner peripheral portion) is formed as scheduled completion thickness (for example, referring to patent document 1).
Patent document 1: Japanese Unexamined Patent Publication 2006-108532 bulletin
But in the method for grinding documented by above patent document 1, due to increasing the peripheral part of removal machined object
Process, so the time can be spent.In addition, due to removal peripheral part the outer diameter of machined object can be made to become smaller, need according to quilt
The consistent size of the outer diameter of machining object, which is remake, to be kept the holding member of machined object, will be processed in overleaf grinding process
Object is transported to the conveyance member of holding member.
Summary of the invention
Therefore, there are following projects by the present invention: in the case where being ground to machined object, being added even if not removing
The peripheral part of work object is also able to suppress the edge chipping of machined object and the generation of chip slight crack.
The present invention for solving the above subject is the method for grinding of machined object, using grinding grinding tool to machined object
The back side is ground, which there is the region divided in a plurality of segmentation preset lines for being formed clathrate to be formed with device
The front of part, wherein the method for grinding of the machined object includes following process: front protecting process utilizes front protecting portion
Part covers the front of the machined object；Metamorphic layer formation process, from the back side of the machined object in side mark more inner than outer peripheral edge
The position of fixed distance has the laser beam of permeability for machined object along the rounded irradiation in outer peripheral edge and is formed rotten
Layer；Process is kept, is kept using front protecting component of the chuck table to the machined object for being formed with the metamorphic layer,
The chuck table is rotated using the rotary shaft of vertical direction；And grinding process, to implement the holding process it
The back side of the machined object afterwards is ground, and so that the machined object is formed as the completion thickness of chip, and processed at this
At the time of the thickness of object reaches the metamorphic layer, using the metamorphic layer along the rounded formation in outer peripheral edge as starting point, this is processed
Object is divided into inner peripheral portion and the peripheral part around inner peripheral portion, and the machined object is divided into the inner circumferential by being overleaf ground midway
Portion and the peripheral part, prevent the chipping as caused by the edge of machined object and slight crack from propagating to the device area of the inner peripheral portion.
It is preferred that above-mentioned front protecting component is splicing tape.
Method for grinding of the invention includes following process: metamorphic layer formation process, from the back side of machined object than
Outer peripheral edge in the inner part as defined in distance position along outer peripheral edge it is rounded irradiation for machined object have permeability laser
Light and form metamorphic layer；Process is kept, using chuck table to the front protecting portion for the machined object for being formed with metamorphic layer
Part is kept, which is rotated using the rotary shaft of vertical direction；And grinding process, it is protected to implementing
The back side for holding the machined object after process is ground, and so that machined object is formed as the completion thickness of chip, and added
At the time of the thickness of work object reaches metamorphic layer, using the metamorphic layer along the rounded formation in outer peripheral edge as starting point, by machined object point
Be cut into inner peripheral portion and the peripheral part around inner peripheral portion, thus by be overleaf ground midway by machined object be divided into inner peripheral portion and
Peripheral part can prevent the chipping as caused by the edge of machined object and slight crack from propagating to the device area of inner peripheral portion.
Such as even if the outer peripheral edge of machined object be special shape in the case where, since the peripheral part being partitioned into copies card
The retaining surface of disk workbench, therefore the peripheral part being partitioned into also can be fixed on chuck table in the form of peripheral part monomer.
In addition, the inner peripheral portion of machined object after grinding, peripheral part are ground as identical thickness until scheduled complete
Until work thickness, therefore in the case where for example carry out after grinding chip separation, implements cutter cutting or laser cutting is ok,
The process for not needing removal peripheral part, therefore effort and time will not be spent.
In addition, can remain the recess for indicating the crystal orientation of machined object due to not removing peripheral part or determine
Implement subsequent process in the state of to plane.
Detailed description of the invention
Fig. 1 is the perspective view for showing the positive state using front protecting component covering machined object.
Fig. 2 is to show to form the perspective view of the state of metamorphic layer in machined object.
Fig. 3 is to show to form the cross-sectional view of the state of metamorphic layer in machined object.
Fig. 4 is the perspective view for illustrating grinding process.
Fig. 5 be show in grinding process machined object the back side grinding midway machined object be divided into inner peripheral portion and
The cross-sectional view of the state of peripheral part.
Fig. 6 is the cross-sectional view for the peripheral side that part shows the machined object before grinding.
Fig. 7 is that the local peripheral part for showing the machined object after ground segmentation copies the retaining surface of chuck table to be inhaled
Draw the cross-sectional view of the state of holding.
Label declaration
W: machined object；Wa: the front of machined object；Wa1: device area；Wa2: periphery remaining area；Wd: outer peripheral edge；
N: recess；S: segmentation preset lines；D: device；T: front protecting component；1: laser processing device；10: keeping workbench；10a: it protects
Hold face；11: laser light irradiation unit；110: shell；111: irradiation head；111a: collector lens；112: laser beam oscillation
Device；14: aligned units；140: camera；7: grinding attachment；70: chuck table；700: retaining surface；71: grinding unit；
710: rotary shaft；714a: grinding grinding tool.
Specific embodiment
Hereinafter, being illustrated to each process of the method for grinding of machined object of the invention.
(1) front protecting process
It is the semiconductor wafer of circular plate that machined object W shown in FIG. 1, which is, for example, by the shape of base material of silicon,
In Fig. 1, towards a plurality of segmentation preset lines S for being formed with square crossing on front Wa to the upper side, pre- by dividing
Each region that alignment S is divided into clathrate is respectively formed with the devices such as IC D.Hereinafter, will be formed with the region of multiple device D as
Device area Wa1.Device area Wa1 is surrounded by the region (periphery remaining area Wa2) of not formed device D.Machined object W's
On the Wd of outer peripheral edge, to be formed with towards the center of machined object W to the state that radially inner side is recessed as indicating crystal orientation etc.
Label recess N.The back side Wb of the side opposite with positive Wa of machined object W, which becomes, implements the ground of grinding
Face.In addition, the chip that machined object W can be on positive Wa before formation device D in addition to silicon can also be by arsenic
Gallium, sapphire, gallium nitride or silicon carbide etc. are constituted.
In the present embodiment, the outer peripheral edge Wd of machined object W has been carried out chamfer machining, and vertical section is substantially circular arc
Shape, but outer peripheral edge Wd can also be trimmed to round by cutting etc., and section becomes rectangular-shaped.In addition, machined object W can also be with
Recess N is not formed, but the orientation for indicating crystal orientation is formed and a part of periphery remaining area Wa2 is cut into plane
Plane.
It is for example pasted on the positive Wa of machined object W and is protected with the circular front of machined object W roughly the same diameter
Shield component T, device area Wa1 and periphery remaining area Wa2 is covered and protected by front protecting component T.Front protecting component T
E.g. with the splicing tape of substrate layer and adhesive layer, but it is not limited to this, can have glass substrate etc. with bonding agent rigid
The hardboard of property is pasted on positive Wa and as front protecting component, and liquid resin can also be coated on positive Wa, is then made
The front protecting component of the resin dry solidification etc. and the positive Wa of formation covering machined object W.
(2) metamorphic layer formation process
Laser processing device 1 shown in Fig. 2 for example, at least includes: the holding work that attracting holding is carried out to machined object W
Platform 10；And the laser light irradiation unit 11 to the machined object W irradiation laser beam for keeping workbench 10 to be kept.It keeps
Such as its shape of workbench 10 is round, is attracted on the retaining surface 10a being made of porous member etc. machined object W
It keeps.Keep workbench 10 that can rotate around the axle center of vertical direction, and can be by mobile unit (not shown) in X-axis side
To with moved back and forth in Y direction.
Laser light irradiation unit 11 is for example with horizontal-extending columned shell 110 in the Y-axis direction, in shell
110 front end is equipped with irradiation head 111.
Laser beam oscillator 112 is equipped in shell 110.Laser beam oscillator 112 for example by YAG laser or
YVO4 laser etc. is constituted, and can vibrate the laser beam for machined object W out with the wavelength of permeability.
The collector lens 111a assembled to laser beam is equipped in irradiation head 111.
Laser light irradiation unit 11 will vibrate laser beam out and lead to from laser beam oscillator 112 towards-Y direction
It crosses outgoing mirror and is transported to irradiation head 111, the reflection of reflecting mirror (not shown) possessed by the inside by illuminated head 111 enters
It is mapped to collector lens 111a, so as to which laser beam to be assembled to and is radiated at the machined object W for keeping workbench 10 to be kept
On.In addition, the focal point position for the laser beam assembled by irradiation head 111 can adjust list by focal point position (not shown)
Member is adjusted on the direction (Z-direction) vertical with the retaining surface 10a of workbench 10 is kept.
Laser processing device 1 has the outer peripheral edge Wd of identification machined object W and the aligned units 14 at center.Aligned units 14
Include light irradiation unit (not shown)；And camera 140, by the optical system for capturing the reflected light from machined object W
The structures such as photoelectric conversion and the capturing element (CCD) that exports image information are carried out with to by the subject image of optical system imaging
At.Laser light irradiation unit 11 is configured to be integrally formed with aligned units 14, and the two moves in the Z-axis direction in linkage.
In metamorphic layer formation process, firstly, as shown in Fig. 2, being placed in back side Wb by machined object W towards upside
On the retaining surface 10a for keeping workbench 10.Also, the attraction by generating not shown attraction source is transmitted to retaining surface
10a keeps workbench 10 to carry out attracting holding to machined object W across front protecting component T on retaining surface 10a.Keep work
The center of the rotation center and machined object W of making platform 10 becomes substantially uniform state.
For example, mobile unit (not shown) makes the lower section for keeping workbench 10 to be moved to aligned units 14, implement edge pair
It is quasi-.That is, workbench 10 is kept to be rotated, the periphery for the machined object W that 140 pairs of holding workbench 10 of camera are kept is utilized
The many places of edge Wd are shot.Then, for example, detection outer peripheral edge Wd separated 3 point coordinate, by based on 3 points
The geometry calculation process of coordinate finds out the more accurate centre coordinate for keeping the machined object W on workbench 10.Then, with
Based on the information of the information of the centre coordinate and the size of the machined object W identified in advance, mobile unit (not shown) makes
It keeps workbench 10 to move in the horizontal direction and workbench 10 will be kept to be positioned at defined position, so that than machined object W
Outer peripheral edge Wd in the inner part as defined in distance position (that is, for example aftermentioned laser beam will not be irradiated to device D and recess N
Periphery remaining area Wa2 in defined position) be located at irradiation head 111 underface.
In addition, edge alignment is not limited to above-mentioned to leave rule from the centre coordinate of machined object W to radial outside like that
The method that the position of fixed distance is determined as laser irradiating position is also possible to the coordinate bit of the outer peripheral edge Wd of machined object W
It is set to basis, the side of laser irradiating position will be determined as from the coordinate position to the position that radially inner side leaves defined distance
Method.
Then, the focal point position for the laser beam assembled by collector lens 111a is positioned to the inside of machining object W
Defined height and position.Then, it repetitive frequency pulsed is vibrated out for machined object from laser beam oscillator 112 with defined
W has the laser beam of the wavelength of permeability, and laser beam is assembled to and is radiated at keep workbench 10 to be kept processed
The inside of object W.Laser beam before reaching focal point has permeability for machined object W, but reaches the laser of focal point
Light shows the very high absorption characteristic in part for machined object W.Therefore, the machined object W near focal point, which absorbs, swashs
Light light and go bad.
By make keep workbench 10 with defined rotation speed about the z axis direction axle center rotation, on one side along be processed
The outer peripheral edge Wd of object W irradiates laser beam to machined object W, in the inside of machined object W as one side is as shown in Figure 2 and Figure 3
Form metamorphic layer M.Forming position of the metamorphic layer M on the thickness direction of machined object W is, for example, to compare from the front of machined object W
Wa acts the slightly higher position in position for being equivalent to the top of completion thickness of machined object W after grinding.This is to make metamorphic layer M
The lateral surface for the circular inner peripheral portion W1 (referring to Fig. 5) divided in aftermentioned grinding process is not remained on.Along quilt
The whole circumference of the outer peripheral edge Wd of machining object W is continuously formed after metamorphic layer M, stops the rotation for keeping workbench 10, and
Stop the irradiation of laser beam.The circular metamorphic layer M formed in this way becomes the intensity region lower than around.
(3) process is kept
The machined object W for being formed with metamorphic layer M is transported to the chuck table 70 of grinding attachment 7 shown in Fig. 4.Chuck
The shape of workbench 70 is round, carries out attraction guarantor to machined object W using the retaining surface 700 being made of porous member etc.
It holds.Chuck table 70 can by being rotated with the rotary shaft 73 that connect below around the axle center of vertical direction (Z-direction), and
And it can move in the Y-axis direction.
As shown in figure 4, being positioned in back side Wb in retaining surface 700 machined object W towards upside.Also, pass through by
The attraction that not shown attraction source generates is transmitted to retaining surface 700, and chuck table 70 is in retaining surface 700 across front
Guard block T carries out attracting holding to machined object W.
(4) grinding process
The back side Wb for the machined object W that chuck table 70 is kept is ground by grinding unit 71 shown in Fig. 4.
Grinding unit 71 for example, rotary shaft 710, can about the z axis direction axle center rotation；Disk-shaped mounting base 713, with
The lower end of rotary shaft 710 connects；And grinding emery wheel 714, it is removably attachable to the lower surface of mounting base 713.Grinding mill
Wheel 714 includes emery wheel base station 714b；And multiple grinding grinding tool 714a of approximately cuboid shape, they are annularly disposed in
On the bottom surface of emery wheel base station 714b.Grinding grinding tool 714a is, for example, to pass through the fixed diamonds such as resinoid bond or metallic bond
Abrasive grain etc. and it is molding.
It is provided in a manner of along the axial direction of rotary shaft 710 (Z-direction) perforation in the inside of rotary shaft 710 (not shown)
Flow path, the flow path provide source with grinding water and are connected to, and become the channel of grinding water, the flow path is in the bottom surface of emery wheel base station 714b with energy
Enough modes for spraying grinding water towards grinding grinding tool 714a are open.
Firstly, as shown in figure 4, positioning chuck table 70 relative to grinding unit 71:
Keep the chuck table that remain machined object W 70 mobile to +Y direction and makes the rotation center for being ground emery wheel 714 relative to quilt
The rotation center of machining object W deviates defined distance, in the rotation for making the rotational trajectory for being ground grinding tool 714a pass through machined object W
The heart.Then, as rotary shaft 710 is rotated, as shown in figure 4, grinding emery wheel 714 is rotated.In addition, grinding unit 71
It is fed to -Z direction, carries out grinding by making to be ground and grinding tool 714a is abutted with the back side Wb of machined object W.It is being ground
In, as chuck table 70 is rotated, machined object W is also rotated, therefore is ground grinding tool 714a to machined object W's
Entire back side Wb carries out grinding.In addition, opposite grinding skiving tool 714a is mentioned with the contact site contacted the back side Wb of machined object W
For being ground water, the cooling of contact site and the cleaning removal of grindstone dust are carried out using grinding water.
By continuing to be ground, at the time of the thickness of machined object W reaches metamorphic layer M, machined object W is along outer
The metamorphic layer M of the rounded formation of periphery Wd is starting point, is divided into inner peripheral portion W1 as shown in Figure 5 and around inner peripheral portion W1
Peripheral part W2.That is, along while removing metamorphic layer M metamorphic layer M effect grinding force, thus make cracking towards be processed
The thickness direction of object W extends, and machined object W is divided into circular inner peripheral portion W1 and circular peripheral part W2.In addition, will be by
Machining object W is ground to the completion thickness of the chip with device D, and then grinding unit 71 rises to +Z direction, is ground grinding tool
714a leaves machined object W, and grinding terminates.
Method for grinding of the invention includes following process: metamorphic layer formation process exists from the back side side Wb of machined object W
The position of defined distance has permeability for machined object W along the rounded irradiation of outer peripheral edge Wd in the inner part than outer peripheral edge Wd
Laser and form metamorphic layer M；Keep process, the front using chuck table 70 to the machined object W for being formed with metamorphic layer M
Guard block T is kept, which is rotated using the rotary shaft 73 of vertical direction；And grinding work
Sequence is ground the back side Wb for implementing the machined object W after keeping process, keeps machined object W-shaped as the complete of chip
Work thickness, and at the time of the thickness of machined object W reaches metamorphic layer M, along the rotten of the rounded formation of outer peripheral edge Wd
Layer M is starting point, machined object W is divided into inner peripheral portion W1 and around the peripheral part W2 of inner peripheral portion W1, therefore passes through overleaf Wb
Grinding midway machined object W is divided into inner peripheral portion W1 and peripheral part W2, caused by the edge as machined object W can be prevented
Chipping and slight crack propagate to the device area Wa1 of inner peripheral portion W1.
In addition, when having carried out chamfer machining and vertical section is big to as in the present embodiment by existing method for grinding
When the machined object W of arc-shaped being caused to be ground, outer peripheral edge Wd easily becomes sharp sharp edge, is particularly easy to that edge chipping occurs
Deng, but in method for grinding of the invention, it is able to suppress the generation of the chipping as caused by sharp edge.
In addition, the inner peripheral portion W1 of machined object W after grinding, peripheral part W2 are ground as identical thickness, until pre-
Until fixed completion thickness, therefore in the case where for example carry out after grinding chip separation, implement cutter cutting or laser cutting
It is ok, the process for not needing removal peripheral part W2, therefore effort and time will not be spent.
In the present embodiment, overleaf after the grinding of Wb, machined object W is not yet divided into chip, therefore further
Implement cutter cutting or laser cutting etc. and is divided into each chip.
In addition, can also for example implement to the machined object W before pasting front protecting component T shown in FIG. 1 precut.
That is, it is deep to utilize the cutting tool of rotation to be formed on machined object W from the positive Wa lateral edge of machined object W segmentation preset lines S
Degree is the cutting slot (half grooving) of the completion thickness of chip or more.Then, after in the same manner as the content illustrated before to precuting
Machined object W implement method for grinding of the invention, the back side Wb of machined object W is ground in (4) grinding process as a result,
It cuts and exposes cutting slot on ground face, so that the inner peripheral portion W1 of machined object W and the peripheral part W2 being partitioned into be ground
It cuts for identical thickness until scheduled completion thickness, and inner peripheral portion W1 is divided into each chip.
Also it can replace and used the precut of cutting tool, the quilt before front protecting component T shown in FIG. 1 to stickup
The following stealthy cutting of machining object W implementation: it irradiates along segmentation preset lines S for the machined object W wavelength with permeability
Laser, the defined depth location in the inside of machined object W form metamorphic layer.Even in this case, also by (4)
Machined object W back side Wb is ground in grinding process and grinding force is applied to the metamorphic layer along segmentation preset lines S, from
And the inner peripheral portion W1 of machined object W and the peripheral part W2 being partitioned into are ground as identical thickness until scheduled completion thickness
Until, and inner peripheral portion W1 is divided into each chip.
Further, since not removing peripheral part W2, therefore can be in the recess N of the crystal orientation of residual expression machined object W
Implement subsequent process in the state of (or directional plane).
As part shows Fig. 6 of the peripheral side of the machined object W before grinding and shows the machined object W after ground segmentation
Peripheral part W2 Fig. 7 shown in, since the peripheral part W2 being partitioned into copies the retaining surface 700 of chuck table 70, because furthermore
Circumference W2 can be fixed on chuck table 70 in the form of monomer, and machined object W will not be made to generate expectation in retaining surface 700
Less than offset etc..
This point such as (e.g. high convex block in the case where being formed in the device D of positive Wa of machined object W with height
In the case where) it is also same.That is, in previous method for grinding, in the case where machined object W has high convex block, due to
Device area Wa1 is different from the height of periphery remaining area Wa2, cannot overleaf be ground sometimes in using chuck table 70 come
Adsorb the peripheral side of machined object W.But in method for grinding of the invention, when inner circumferential is divided in the grinding by back side Wb
When portion W1 and peripheral part W2, due to peripheral part W2 pulled down to 700 side of retaining surface in the form of monomer and by chuck table 70
Absorption, therefore will not become unable to adsorb as described above.
In addition, method for grinding of the invention is not limited to the above embodiment, in addition, the various devices illustrated in attached drawing
Each structure is also not necessarily limited to this, can be suitably changed in the range of can play effect of the invention.
Claims (2)
1. a kind of method for grinding of machined object is ground the back side of machined object using grinding grinding tool, the machined object
With the front for being formed with device in the region that a plurality of segmentation preset lines for being formed clathrate divide, which is characterized in that
The method for grinding of the machined object includes following process:
Front protecting process covers the front of the machined object using front protecting component；
Metamorphic layer formation process, from the back side of the machined object than outer peripheral edge in the inner part as defined in distance position along outer
The rounded irradiation of periphery has the laser beam of permeability for machined object and forms metamorphic layer；
Process is kept, is protected using front protecting component of the chuck table to the machined object for being formed with the metamorphic layer
It holds, which is rotated using the rotary shaft of vertical direction；And
Grinding process is ground the back side for implementing the machined object after the holding process, makes the machined object shape
As the completion thickness of chip, and at the time of the thickness of the machined object reaches the metamorphic layer, to be in circle along outer peripheral edge
The metamorphic layer that shape is formed is starting point, which is divided into inner peripheral portion and around the peripheral part of inner peripheral portion,
The machined object is divided into the inner peripheral portion and the peripheral part by being overleaf ground midway, prevents the side by machined object
Chipping caused by edge and slight crack propagate to the device area of the inner peripheral portion.
2. method for grinding according to claim 1, which is characterized in that
The front protecting component is splicing tape.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018038560A JP2019150925A (en) | 2018-03-05 | 2018-03-05 | Method for grinding work-piece |
| JP2018-038560 | 2018-03-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110233100A true CN110233100A (en) | 2019-09-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910150730.2A Pending CN110233100A (en) | 2018-03-05 | 2019-02-28 | The method for grinding of machined object |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2019150925A (en) |
| KR (1) | KR20190105506A (en) |
| CN (1) | CN110233100A (en) |
| TW (1) | TW201938315A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114952433A (en) * | 2022-04-08 | 2022-08-30 | 北京华航唯实机器人科技股份有限公司 | Polishing method and polishing system |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006179868A (en) * | 2004-11-25 | 2006-07-06 | Tokyo Seimitsu Co Ltd | Method and device for peeling off film |
| JP2007096115A (en) * | 2005-09-29 | 2007-04-12 | Fujitsu Ltd | Manufacturing method of semiconductor device |
| CN101878092A (en) * | 2007-11-30 | 2010-11-03 | 浜松光子学株式会社 | Working object grinding method |
| JP2017216274A (en) * | 2016-05-30 | 2017-12-07 | 株式会社ディスコ | Processing method for wafer |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006108532A (en) | 2004-10-08 | 2006-04-20 | Disco Abrasive Syst Ltd | Method of grinding wafer |
-
2018
- 2018-03-05 JP JP2018038560A patent/JP2019150925A/en active Pending
-
2019
- 2019-02-26 KR KR1020190022501A patent/KR20190105506A/en not_active Application Discontinuation
- 2019-02-26 TW TW108106530A patent/TW201938315A/en unknown
- 2019-02-28 CN CN201910150730.2A patent/CN110233100A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006179868A (en) * | 2004-11-25 | 2006-07-06 | Tokyo Seimitsu Co Ltd | Method and device for peeling off film |
| JP2007096115A (en) * | 2005-09-29 | 2007-04-12 | Fujitsu Ltd | Manufacturing method of semiconductor device |
| CN101878092A (en) * | 2007-11-30 | 2010-11-03 | 浜松光子学株式会社 | Working object grinding method |
| JP2017216274A (en) * | 2016-05-30 | 2017-12-07 | 株式会社ディスコ | Processing method for wafer |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114952433A (en) * | 2022-04-08 | 2022-08-30 | 北京华航唯实机器人科技股份有限公司 | Polishing method and polishing system |
| CN114952433B (en) * | 2022-04-08 | 2024-05-28 | 北京华航唯实机器人科技股份有限公司 | Polishing method and polishing system |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201938315A (en) | 2019-10-01 |
| JP2019150925A (en) | 2019-09-12 |
| KR20190105506A (en) | 2019-09-17 |
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