CN110233013A - A kind of preparation method of temperature compensation attenuator - Google Patents
A kind of preparation method of temperature compensation attenuator Download PDFInfo
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- CN110233013A CN110233013A CN201810177674.7A CN201810177674A CN110233013A CN 110233013 A CN110233013 A CN 110233013A CN 201810177674 A CN201810177674 A CN 201810177674A CN 110233013 A CN110233013 A CN 110233013A
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- temperature coefficient
- compensation attenuator
- temperature compensation
- preparation
- resister
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
- H01C7/021—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient formed as one or more layers or coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
- H01C7/041—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient formed as one or more layers or coatings
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/24—Frequency- independent attenuators
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
The invention discloses a kind of preparation methods of temperature compensation attenuator, the temperature compensation attenuator is made of positive temperature coefficient resistor and negative temperature coefficient resister, the positive temperature coefficient resistor and negative temperature coefficient resister are formed by positive temperature coefficient resistor slurry and negative temperature coefficient resister slurry printing-sintering respectively, the positive temperature coefficient resistor slurry includes ultrafine gold powder, and the negative temperature coefficient resister slurry includes spherical NTC function powder.The present invention solves temperature compensation attenuator high frequency performance and 1GHz consistency problem, product nominal frequency range using when can guarantee that system is not in biggish interference, improve the high frequency performance of temperature compensation attenuator.
Description
Technical field
The invention belongs to technical field of electronic devices, and in particular to a kind of preparation method of temperature compensation attenuator.
Background technique
The preparation method of the highly reliable current mainstream of temperature compensation attenuator is thick-film technique, and temperature compensation attenuator is a kind of microwave
Component, the effect temperature compensation under different frequency are the important performances of product, and different product model specification is applied to different
Frequency range.Domestic and international temperature compensation attenuator performance indicator, which is directed to mostly under 1GHz, at present is defined, such as attenuation, attenuation
Temperature coefficient, standing-wave ratio etc..
Effect temperature compensation is attained by nominal value to temperature compensation attenuator at 1 GHz under normal circumstances, but under high frequency often
It is more nominal value to be deviateed.Therefore promoting the consistency of performance indicator and performance indicator under 1GHz under high frequency is that current temperature compensation decays
The technical problem of device.
Summary of the invention
To solve the above-mentioned problems, the present invention provides the designs that a kind of thick film temperature compensation attenuator high frequency performance is promoted
And preparation method, solve temperature compensation attenuator high frequency performance and 1GHz consistency problem, product is used in nominal frequency range
When can guarantee that system is not in biggish interference.
The technical solution of the present invention is as follows: a kind of preparation method of temperature compensation attenuator, the temperature compensation attenuator is by positive temperature system
Number resistance and negative temperature coefficient resister composition, the positive temperature coefficient resistor and negative temperature coefficient resister are respectively by positive temperature coefficient
Resistance slurry and negative temperature coefficient resister slurry printing-sintering are formed, and the positive temperature coefficient resistor slurry includes ultrafine gold powder,
The negative temperature coefficient resister slurry includes spherical NTC function powder.
The addition of bronze has following two improvement: on the one hand, improving positive temperature coefficient resistor slurry (PTC resistance slurry
Material) TCR value, in the identical situation of remaining condition, the linearity that the temperature compensation attenuator attenuation of preparation varies with temperature is preferable；
On the other hand, the PTC resistor body that is formed surface skin effect in high frequency after the PTC resistor slurry sintering after ultrafine gold powder is added
Preferably, it is ensured that PTC resistor body has been compared with 1GHz and connect very much in high frequency (2~10GHz or other) in temperature compensation attenuator
Close temperature coefficient.
Positive temperature coefficient resistor slurry (NTC resistance slurry) during the preparation process, adds the grain shape of NTC function powder
To improve, it is improved to spherical by rectangular, the performance of negative temperature coefficient slurry in high frequency is obviously improved.
Preferably, the ultrafine gold powder average grain diameter is less than 5 μm.
As further preferred, 2~3 μm of the ultrafine gold powder average grain diameter.
Preferably, the partial size of the NTC function powder is 0.2 μm.To the particle size of NTC function powder by original
0.5 μm is reduced to 0.2 μm, and the performance of negative temperature coefficient slurry in high frequency is obviously improved.
Preferably, the negative temperature coefficient resister includes the first negative temperature coefficient resister region and the second negative temperature system
Number resistance region, first negative temperature coefficient resister region one end adjacent with the second negative temperature coefficient resister region are in shape
Identical curve-like.Negative temperature coefficient resister, which generally requires, to carry out electrode to reduce number formulary processing, to realize preparation temperature compensation decaying
The attenuation and attenuation temperature coefficient of device specific standard.In reducing number formulary processing, usual manner is insert type electrode, this
Insert type electrode design can make negative temperature coefficient resister there is the slow Henan phenomenon of phase in high frequency, the temperature coefficient under high frequency with
There is a certain distance under 1GHz.Negative temperature coefficient resister is differed with the temperature characterisitic under 1GHz in high frequency after present invention change
Less.
Preferably, the positive temperature coefficient resistor and negative temperature coefficient resister with a thickness of 12~16 μm.To positive temperature
The printing film thickness of coefficient resistance and negative temperature coefficient resister is controlled, and simulation result shows that printing film thickness influences high frequency performance
It is larger.But thicknesses of layers it is too thin when influence the rated power of product, therefore positive temperature coefficient resistor is determined by test of many times
The film thickness of body and negative temperature coefficient resister body improves the high frequency performance of temperature compensation attenuator.
Preferably, the positive temperature coefficient resistor includes two positive temperature coefficient resistor bodies, two positive temperature coefficient electricity
Spacing between resistance body must reach 5 times or more of spacing.The present invention has found two positive temperature coefficient resistors by simulation calculation
Certain parasitic capacitance can be generated when being closer or even merge into one, influence high frequency performance.Therefore the present invention to two just
Spacing between the width and resistor body of temperature coefficient of resistance body is redesigned, between two positive temperature coefficient resistor bodies
Spacing must reach 5 times or more of spacing.
The present invention also provides a kind of temperature compensation attenuators being prepared by above-mentioned preparation method.
Compared with prior art, the beneficial effects of the present invention are embodied in:
The present invention solves temperature compensation attenuator high frequency performance and 1GHz consistency problem, and product makes in nominal frequency range
Used time can guarantee that system is not in biggish interference, improve the high frequency performance of temperature compensation attenuator.
Detailed description of the invention
Fig. 1 is addition ultrafine gold powder SEM picture.
Fig. 2 a is NTC function powder SEM figure before the present invention improves.
Fig. 2 b is that NTC function powder SEM schemes after the present invention improves.
Fig. 3 a temperature compensation attenuator conventional design layout figure.
Fig. 3 b is via the improved temperature compensation pad design conceptual scheme of the present invention.
Fig. 4 is microstripline plate figure.
Fig. 5 a is existing temperature compensation attenuator performance test data figure.
Fig. 5 b is temperature compensation attenuator performance test data figure of the present invention.
Specific embodiment
Embodiment 1
The present invention solves temperature compensation attenuator high frequency performance and 1GHz consistency problem, and product makes in nominal frequency range
Used time can guarantee that system is not in biggish interference.The negative temperature coefficient temperature compensation that the present embodiment is formed with π type resistor network
Principle is carried out for attenuator and method illustrates, but is equally applicable to T-type or other model specification temperature compensation attenuators.
Solve principle: 1, temperature compensation attenuator is printed respectively by positive temperature coefficient (PTC) and negative temperature coefficient (NTC) resistance slurry
The resistor network that brush, sintering are formed, therefore slurry is affected to temperature compensation attenuator high frequency performance.Intend to PTC and NTC slurry system
Preparation Method improves.
(1) in PTC resistor somaplasm material preparation process, increase ultrafine gold powder, ultrafine gold powder average grain diameter is less than 5 μm, preferably
2~3 μm, as shown in Figure 1.The addition of bronze has following two improvement: on the one hand, the TCR value of PTC resistor slurry is improved,
In the identical situation of remaining condition, the linearity that the temperature compensation attenuator attenuation of preparation varies with temperature is preferable；On the other hand, ultra-fine
Surface skin effect is preferable in high frequency for the PTC resistor body formed after PTC resistor slurry sintering after bronze addition, it is ensured that
PTC resistor body is compared with 1GHz in high frequency (2~10GHz or other) and has very close temperature coefficient in temperature compensation attenuator,
Fig. 1 is addition ultrafine gold powder SEM picture.
(2) NTC resistance slurry during the preparation process, improves the grain shape of NTC function powder, by rectangular improvement
To be spherical, while 0.2 μm is reduced to by original 0.5 μm to the particle size of NTC function powder, sees Fig. 2 a and Fig. 2 b,
Particle shape shape is that the performance of the negative temperature coefficient slurry spherical, partial size is 0.2 μm of preparation in high frequency is obviously improved.
2, negative temperature coefficient resister body, which generally requires, carries out electrode to reduce number formulary processing, prepares temperature compensation attenuator to realize
The attenuation and attenuation temperature coefficient of specific standard.In reducing number formulary processing, usual manner is insert type electrode, and electrode shows
It is intended to as shown in Figure 3a, this insert type electrode design can make negative temperature coefficient resister there is the Chi Yuxian of phase in high frequency
As having a certain distance under the temperature coefficient and 1GHz under high frequency.Electrode design is carried out referring to design of Simulation correlated results
Change, schematic diagram is as shown in Figure 3b after change, after change negative temperature coefficient resister body in high frequency with the temperature characterisitic under 1GHz
It is not much different.
3, it can be generated when finding that two positive temperature coefficient resistor bodies are closer or even merge into one by simulation calculation
Certain parasitic capacitance, influences high frequency performance.Therefore we carry out again the spacing between the width and resistor body of resistor body
It designs, the spacing between two positive temperature coefficient resistor bodies must reach 5 times or more of spacing.
4, the printing film thickness of positive temperature coefficient resistor body and negative temperature coefficient resister body is controlled, simulation result shows
Printing film thickness is affected to high frequency performance.But thicknesses of layers it is too thin when influence the rated power of product, therefore by multiple
Test the film thickness for determining positive temperature coefficient resistor body and negative temperature coefficient resister body.To improve the high frequency of temperature compensation attenuator
Energy.
The present embodiment illustrates by taking the TVA067N5W3S that China Zhenhua Group Yunke Electronics Co., Ltd. produces as an example.
1, on the basis of original positive temperature coefficient resistor slurry preparation method, increase by 1% ultrafine gold powder, average grain diameter is
2.6 μm, as shown in Figure 1.
2, on the basis of original negative temperature coefficient resister slurry preparation method, sanded treatment is carried out to NTC raw material, it is average
Partial size is further reduced to 0.2 μm by original 0.5 μm, and pattern is changed into spherical by original square.
3, Fig. 3 b is changed to by Fig. 3 a to negative temperature coefficient resister overlap electrode design.
4, positive temperature coefficient resistor is changed to separate in Fig. 3 b by merging in Fig. 3 a, and two positive temperature coefficients
Resistor body spacing is 6 times of resistor body width.
5, resistor body film thickness is adjusted, determines that thickness is changed to by original (22 ± 2) μm by a large number of experiments
(14±2)μm。
6, after the printing screen plate for preparing stainless wire mesh by design drawing, by conventional thick-film technique, by silk-screen printing
Electrode slurry → sintered electrode → silk-screen printing Thermistor → sintering resistor body → prepares encapsulated layer → preparation end face electricity
Pole → end face processing obtains thick film temperature compensation attenuator.
7, preparation TVA067N5W3S is manufactured experimently respectively with the mode after design of material change by conventional methods, decay to it
Device, attenuation temperature coefficient are tested.Decaying weight testing method: it under the conditions of 25 DEG C ± 2 DEG C, is surveyed with vector network analyzer
The attenuation (| S21 |) of examination temperature compensation attenuator at different frequencies.Attenuation temperature coefficient: temperature compensation attenuator should use dedicated survey
Fixture or pressing are tried on the microstripline plate with pad structure shown in Fig. 4, connected vector Network Analyzer, at -55 DEG C
Within the temperature range of~125 DEG C, an attenuation test is carried out at interval of 20 DEG C, is recorded under each test temperature point different frequency
Attenuation, using linear regression calculated curve slope；Attenuation temperature coefficient is calculated with following formula:
TCA=slope (Slope)/25 DEG C of attenuation@.Fig. 5 a is test data before changing, and Fig. 5 b is to test number after changing
According to, the results showed that this improved procedure can greatly improve the high frequency performance of temperature compensation attenuator.
Claims (8)
1. a kind of preparation method of temperature compensation attenuator, which is characterized in that the temperature compensation attenuator is by positive temperature coefficient resistor and bears
Temperature coefficient of resistance composition, the positive temperature coefficient resistor and negative temperature coefficient resister respectively by positive temperature coefficient resistor slurry and
Negative temperature coefficient resister slurry printing-sintering is formed, and the positive temperature coefficient resistor slurry includes ultrafine gold powder, the negative temperature
Coefficient resistance slurry includes spherical NTC function powder.
2. the preparation method of temperature compensation attenuator as described in claim 1, which is characterized in that the ultrafine gold powder average grain diameter is small
In 5 μm.
3. the preparation method of temperature compensation attenuator as claimed in claim 2, which is characterized in that the ultrafine gold powder average grain diameter 2
~3 μm.
4. the preparation method of temperature compensation attenuator as described in claim 1, which is characterized in that the partial size of the NTC function powder
It is 0.2 μm.
5. the preparation method of temperature compensation attenuator as described in claim 1, which is characterized in that the negative temperature coefficient resister includes
First negative temperature coefficient resister region and the second negative temperature coefficient resister region, first negative temperature coefficient resister region with
The adjacent one end in second negative temperature coefficient resister region is in the identical curve-like of shape.
6. the preparation method of temperature compensation attenuator as described in claim 1, which is characterized in that the positive temperature coefficient resistor and negative
Temperature coefficient of resistance with a thickness of 12~16 μm.
7. the preparation method of temperature compensation attenuator as described in claim 1, which is characterized in that the positive temperature coefficient resistor includes
Two positive temperature coefficient resistor bodies, the spacing that the spacing between two positive temperature coefficient resistor bodies is 5 times or more.
8. a kind of temperature compensation attenuator being prepared by any preparation method of claim 1~7.
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| CN201810177674.7A CN110233013B (en) | 2018-03-05 | 2018-03-05 | Temperature compensation attenuator and preparation method thereof |
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| CN201810177674.7A CN110233013B (en) | 2018-03-05 | 2018-03-05 | Temperature compensation attenuator and preparation method thereof |
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| CN110233013A true CN110233013A (en) | 2019-09-13 |
| CN110233013B CN110233013B (en) | 2021-07-16 |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01291401A (en) * | 1988-05-19 | 1989-11-24 | Fuji Elelctrochem Co Ltd | Thin film resistor and manufacture thereof |
| JPH04370904A (en) * | 1991-06-19 | 1992-12-24 | Matsushita Electric Ind Co Ltd | Manufacture of heating element having positive temperature coefficient resistance |
| US5332981A (en) * | 1992-07-31 | 1994-07-26 | Emc Technology, Inc. | Temperature variable attenuator |
| WO2001057889A1 (en) * | 2000-02-01 | 2001-08-09 | Ube Industries, Ltd. | Conductive polymer composition and ptc element |
| CN1671041A (en) * | 2004-05-18 | 2005-09-21 | 阎跃军 | Temperature compensation attenuator |
| CN201048378Y (en) * | 2006-08-12 | 2008-04-16 | 彭志珊 | Temperature compensation attenuator |
| CN101789768A (en) * | 2009-01-25 | 2010-07-28 | 深圳市研通高频技术有限公司 | Temperature compensation attenuator |
| CN107706495A (en) * | 2017-11-09 | 2018-02-16 | 广东风华高新科技股份有限公司 | A kind of preparation method of temperature compensation attenuator |
-
2018
- 2018-03-05 CN CN201810177674.7A patent/CN110233013B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01291401A (en) * | 1988-05-19 | 1989-11-24 | Fuji Elelctrochem Co Ltd | Thin film resistor and manufacture thereof |
| JPH04370904A (en) * | 1991-06-19 | 1992-12-24 | Matsushita Electric Ind Co Ltd | Manufacture of heating element having positive temperature coefficient resistance |
| US5332981A (en) * | 1992-07-31 | 1994-07-26 | Emc Technology, Inc. | Temperature variable attenuator |
| WO2001057889A1 (en) * | 2000-02-01 | 2001-08-09 | Ube Industries, Ltd. | Conductive polymer composition and ptc element |
| CN1671041A (en) * | 2004-05-18 | 2005-09-21 | 阎跃军 | Temperature compensation attenuator |
| CN201048378Y (en) * | 2006-08-12 | 2008-04-16 | 彭志珊 | Temperature compensation attenuator |
| CN101789768A (en) * | 2009-01-25 | 2010-07-28 | 深圳市研通高频技术有限公司 | Temperature compensation attenuator |
| CN107706495A (en) * | 2017-11-09 | 2018-02-16 | 广东风华高新科技股份有限公司 | A kind of preparation method of temperature compensation attenuator |
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| CN110233013B (en) | 2021-07-16 |
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