CN110231739B - Pixel structure - Google Patents

Abstract

The invention provides a pixel structure, which comprises a substrate, a signal line and a pixel unit, wherein the signal line and the pixel unit are arranged on the substrate. The pixel unit is provided with a first area and a second area which are positioned at two sides of the signal line, and comprises a first pixel electrode at least positioned in the first area, a first common electrode positioned in the first area and on the first pixel electrode, a second common electrode positioned in the second area, a second pixel electrode at least positioned in the second area and on the second common electrode, an insulating layer positioned between the first pixel electrode and the first common electrode and between the second common electrode and the second pixel electrode, and a connecting hole positioned between the first area and the second area and penetrating through the insulating layer. The first pixel electrode and the second pixel electrode are electrically connected through the connecting hole. The first and second common electrodes, the first and second pixel electrodes comprise a light-transmitting conductive material. The first and second common electrodes respectively include a plurality of comb-shaped electrodes.

Description

Pixel structure

Technical Field

The present invention relates to a pixel structure, and more particularly, to a pixel structure for improving a Flexoelectric Effect (FEE).

Background

Liquid crystal display panels with excellent space utilization efficiency, low power consumption, no radiation and other excellent characteristics have gradually become the mainstream of the market. In order to provide better display quality for lcd panels, various wide viewing angle lcd panels are currently developed in the market, such as in-plane switching (IPS) lcd panels, Fringe Field Switching (FFS) lcd panels, multi-domain vertical alignment (MVA) lcd panels, and so on. Taking the fringe field switching liquid crystal display panel as an example, it has the advantages of wide viewing angle (wide viewing angle) and low color shift (color shift).

The liquid crystal display device can reduce power consumption (power consumption) in use by reducing the operation frequency, so as to improve the service time. However, when the image of the fringe field switching liquid crystal display panel is changed with the frequency, the transmittance may be different due to the flexoelectric effect when the polarity of the liquid crystal molecules is reversed, and the flicker (flicker) phenomenon may occur to reduce the display quality. Therefore, how to reduce the accumulation of positive and negative charges caused by the flexoelectric effect and reduce the flicker Image caused by the flexoelectric effect by the design of the pixel structure, and improve the brightness non-uniformity of the Image Sticking (IS) to make it have better display quality, which IS one of the objectives desired by developers.

Disclosure of Invention

In view of the deficiencies of the prior art, the present invention provides a pixel structure having a better display quality.

Specifically, the present invention provides a pixel structure comprising:

a substrate;

a first signal line disposed on the substrate; and

a pixel unit disposed on the substrate and having a first region and a second region on opposite sides of the first signal line, the pixel unit including:

a first pixel electrode at least located in the first region;

a first common electrode located in the first region and on the first pixel electrode;

a second common electrode located in the second region;

a second pixel electrode at least located in the second region and on the second common electrode;

an insulating layer between the first pixel electrode and the first common electrode and between the second common electrode and the second pixel electrode; and

a connection hole between the first region and the second region and at least penetrating through the insulation layer, the first pixel electrode and the second pixel electrode being electrically connected via the connection hole, wherein:

the first common electrode comprises a light-transmitting conductive material;

the first pixel electrode comprises a light-transmitting conductive material;

the second pixel electrode comprises a light-transmitting conductive material;

the second common electrode includes a light-transmissive conductive material;

the first common electrode includes a plurality of first comb electrodes (strip electrodes); and is

The second pixel electrode includes a plurality of second comb electrodes.

The pixel structure, wherein:

the ratio of the line width to the line distance of the first comb-shaped electrodes is more than or equal to 0.3 and less than 2.0; and is

The ratio of the line width to the line distance of the second comb electrodes is greater than or equal to 0.3 and less than 2.0.

The pixel structure further comprises:

a plurality of second signal lines, wherein the pixel unit is located between the adjacent second signal lines, and the extending direction of the second signal lines is different from the extending direction of the first signal lines, wherein:

the range of the first pixel electrode and the first common electrode in the first area, which are vertically projected on the substrate, has a first area;

the range of the second common electrode and the second pixel electrode in the second area, which are vertically projected on the substrate, has a second area; and is

The second area is greater than or equal to the first area.

The pixel structure, wherein:

the ratio of the line width to the line distance of the first comb-shaped electrodes is more than 0.3 and less than 2.0;

the ratio of the line width to the line distance of the second comb-shaped electrodes is more than 0.3 and less than 2.0; and is

The second area is 2.4 to 3.5 times the first area.

The pixel structure further comprises:

a plurality of second signal lines, wherein the pixel unit is located between the adjacent second signal lines, and the extending direction of the second signal lines is different from the extending direction of the first signal lines; and

and the connecting wire is electrically connected to the first common electrode of the pixel unit and crosses the second signal wires.

The pixel structure, wherein the extending direction of the connecting line is substantially parallel to the first signal line.

The pixel structure, wherein:

the first pixel electrode includes a first protruding portion extending from the first region to the second region;

the second common electrode has a concave portion;

the connecting hole is positioned in the concave part; and is

The first protruding part covers the connecting hole, so that the first pixel electrode and the second pixel electrode are electrically connected through the connecting hole.

The pixel structure, wherein a distance between the first pixel electrode and the second common electrode is greater than 5 μm.

The pixel structure, wherein:

the second pixel electrode includes a second protruding portion extending from the second region to the first region;

the second common electrode has a concave portion;

the connecting hole is positioned in the concave part; and is

The second protrusion covers the connection hole, so that the first pixel electrode and the second pixel electrode are electrically connected through the connection hole.

The pixel structure further comprises:

and the active element comprises a grid electrode, a drain electrode and a source electrode, wherein the grid electrode is electrically connected with the first signal line, and the drain electrode is electrically connected with the first pixel electrode and the second pixel electrode.

According to the scheme, the invention has the advantages that:

based on the above, in the pixel structure of the invention, the first region and the second region have opposite electric field directions, so as to reduce the influence possibly caused by charge accumulation and improve the display quality.

Drawings

Fig. 1 is a top view of a pixel structure according to an embodiment of the invention.

Fig. 2 is a schematic cross-sectional view of a display panel according to an embodiment of the invention.

Fig. 3 is a relationship diagram of relative bending effect ratios (relative FEE ratios) of the first region and the second region of the pixel structure according to the test example of the present invention.

Description of the symbols:

100: a pixel structure;

200: a liquid crystal display panel;

110: a substrate;

120: a first signal line;

121: a first side;

122: a second side;

130: a second signal line;

140: a first pixel electrode;

143: a first projecting portion;

150: a second pixel electrode;

153: a second projecting portion;

154: a second comb electrode;

154L: line width;

154S: line spacing;

160: a first common electrode;

164: a first comb electrode;

164L: line width;

164S: line spacing;

170: a second common electrode;

175: a concave portion;

180. 181, 182: an insulating layer;

190: a connecting wire;

210: a color filter substrate;

220: an array substrate;

230: a liquid crystal layer;

211: a substrate;

212: a light-shielding layer;

213: a color filter layer;

214: a protective layer;

TH: connecting holes;

t: an active element;

s: a source electrode;

d: a drain electrode;

g: a gate electrode;

CH: a channel;

PU (polyurethane): a pixel unit;

a1: a first region;

a2: a second region;

r1: a range of a first area;

r2: a range of a second area;

l1: and (4) spacing.

Detailed Description

In order to make the aforementioned features and effects of the present invention more comprehensible, embodiments accompanied with figures are described in detail below.

In the drawings, the thickness of various elements and the like are exaggerated for clarity. Like reference numerals refer to like elements throughout the specification. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" or "overlapping" another element, it can be directly on or connected to the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physically and/or electrically connected.

It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a "first element," "component," "region," "layer," or "portion" discussed below could be termed a second element, component, region, layer, or portion without departing from the teachings herein.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms, including "at least one", unless the content clearly indicates otherwise. "or" means "and/or". As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, regions, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, regions integers, steps, operations, elements, components, and/or groups thereof.

Furthermore, relative terms, such as "lower" or "bottom" and "upper" or "top," may be used herein to describe one element's relationship to another element, as illustrated. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures. For example, if the device in one of the figures is turned over, elements described as being on the "lower" side of other elements would then be oriented on "upper" sides of the other elements. Thus, the exemplary term "lower" can include both an orientation of "lower" and "upper," depending on the particular orientation of the figure. Similarly, if the device in one of the figures is turned over, elements described as "below" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary terms "below" or "beneath" can encompass both an orientation of above and below.

As used herein, "about", "substantially", or "approximately" includes the stated value and the average value within an acceptable range of deviation of the specified value as determined by one of ordinary skill in the art, taking into account the measurement in question and the specified amount of error associated with the measurement (i.e., the limitations of the measurement system). For example, "about" may mean within one or more standard deviations of the stated value, or within ± 30%, ± 20%, ± 10%, ± 5%.

Unless defined otherwise, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present invention and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

Exemplary embodiments are described herein with reference to cross-sectional views that are schematic illustrations of idealized embodiments. Thus, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, the embodiments described herein should not be construed as limited to the particular shapes of regions as illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, a region shown or described as flat may generally have rough and/or nonlinear features. Further, the acute angles shown may be rounded. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region and are not intended to limit the scope of the claims.

Fig. 1 is a top view of a pixel structure according to an embodiment of the invention. Fig. 2 is a schematic cross-sectional view of a liquid crystal display panel according to an embodiment of the invention. The cross-sectional view of the display panel of FIG. 2 can be shown corresponding to the cross-sectional line A-A' in the pixel structure of FIG. 1. For clarity and convenience of illustration, some of the layers shown in fig. 1 and 2 are omitted. For example, fig. 2 omits the substrate 110 of the pixel structure 100. Hereinafter, an implementation of the pixel structure according to an embodiment of the present invention will be described in detail with reference to fig. 1 and 2.

The liquid crystal display panel 200 may include a color filter substrate 210, an array substrate 220, and a liquid crystal layer 230. The color filter substrate 210 may include a substrate 211, a light-shielding layer 212, a color filter layer 213, and a protective layer 214. The array substrate 220 may include a plurality of pixel units PU, and the plurality of pixel units PU may be arranged in an array.

In the array substrate 220, the substrate 110, the first signal line 120, and the pixel unit PU may constitute the pixel structure 100. In other words, the pixel structure 100 includes the substrate 110, the first signal line 120, and the pixel unit PU. The first signal line 120 is disposed on the substrate 110. The pixel unit PU is disposed on the substrate 110. The first signal line 120 has a first side 121 and a second side 122 opposite to each other. The pixel unit PU has a first region a1 and a second region a 2. In the top view state, the first region a1 of the pixel unit PU is located at the first side 121 of the first signal line 120, and the second region a2 of the pixel unit PU is located at the second side 122 of the first signal line 120. Generally, the first signal line 120 may be made of a metal material for electrical conductivity, but the present invention does not exclude the use of other conductive materials.

The pixel unit PU includes a first pixel electrode 140, a second pixel electrode 150, a first common electrode 160, a second common electrode 170, an insulating layer 180, and a connection hole TH. The first pixel electrode 140 is located at least in the first area a 1. The first common electrode 160 is located at the first region a 1. The second pixel electrode 150 is located at least in the second region a 2. The second common electrode 170 is located at the second region a 2. The connection hole TH is located between the first and second regions a1 and a 2. The first common electrode 160 is disposed on the first pixel electrode 140. That is, the first region a1 may be referred to as a top common electrode (top com) region. The second pixel electrode 150 is positioned on the second common electrode 170. That is, the second region a2 may be referred to as a top pixel electrode (top pixel) region. The insulating layer 180 is located between the first pixel electrode 140 and the first common electrode 160, and the insulating layer 180 is located between the second common electrode 170 and the second pixel electrode 150. The connection hole TH penetrates at least the insulating layer 180. The first pixel electrode 140 and the second pixel electrode 150 are electrically connected through the connection hole TH. In other words, the electric field directions in the first region a1 and the second region a2 of the pixel structure 100 may be opposite. Thus, even though there may be charge accumulation during the operation of the pixel structure 100, the influence caused by the charge accumulation can be reduced by the first region a1 and the second region a2 with the electric fields in opposite directions.

In this embodiment, the pixel unit PU may also include other insulating layers to separate different conductive layers. For example, the insulating layer 181 may separate the gate G from the source S and the drain D. In other words, the insulating layer 181 may be referred to as a gate insulating layer. For example, the insulating layer 182 may separate the second common electrode 170 and the conductive film layer from which the drain D or the drain D extends, and the insulating layer 182 may separate the first pixel electrode 140 and the conductive film layer from which the drain D or the drain D extends. Of course, the different conductive layers separated by the insulating layer may be electrically connected to each other through a connection hole (e.g., a connection hole similar to the connection hole TH). For example, the connection hole TH may further penetrate through the insulating layer 182, so that the first pixel electrode 140, the second pixel electrode 150, the drain D and the conductive film layer extending from the drain D are electrically connected to each other.

In one embodiment, the first pixel electrode 140 includes a first protrusion 143 extending from the first region a1 to the second region a2, and a side edge of the second common electrode 170 has a concave portion 175. The first protrusion 143 may cover the connection hole TH, so that the first pixel electrode 140 and the second pixel electrode 150 are electrically connected through the connection hole TH. In the top view state, the connection hole TH is located within a concave range surrounded by the concave portion 175 of the second common electrode 170. As such, the pixel structure 100 may have a better aperture ratio (aperture ratio).

In one embodiment, the second pixel electrode 150 includes a second convex portion 153 extending from the second region a2 to the first region a1, and a side edge of the second common electrode 170 has a concave portion 175. The second protrusion 153 may cover the connection hole TH, so that the first pixel electrode 140 and the second pixel electrode 150 are electrically connected through the connection hole TH. In the top view state, the connection hole TH is located within a concave range surrounded by the concave portion 175 of the second common electrode 170. As such, the pixel structure 100 may have a better aperture ratio.

In this embodiment, the pixel structure 100 may further include a plurality of second signal lines 130. The pixel unit PU may be located between two adjacent second signal lines 130. One of the two adjacent second signal lines 130 may be electrically connected to the pixel unit PU, and the other of the two adjacent second signal lines 130 may be electrically connected to another pixel unit (not shown, which may be located at an adjacent side of the pixel unit PU). The first signal lines 120 and the second signal lines 130 are interleaved with each other. In other words, the extending direction of the second signal line 130 is different from the extending direction of the first signal line 120. Generally, the second signal line 130 may be made of a metal material for electrical conductivity, but the present invention does not exclude the use of other conductive materials.

In the present embodiment, the pixel structure 100 may further include an active element (active element) T. The active device T includes a source S, a drain D, a gate G and a channel CH. The source S may be electrically connected to the second signal line 130. The gate G may be electrically connected to the first signal line 120. The drain D may be electrically connected to the first pixel electrode 140 and the second pixel electrode 150 of the pixel unit PU (for example, a conductive film layer further extending from the drain D may be electrically connected to the first pixel electrode 140 and the second pixel electrode 150). In other words, in the present embodiment, the first signal line 120 electrically connected to the gate G may be a gate line, and the second signal line 130 electrically connected to the source S may be a source line, but the invention is not limited thereto.

In the present embodiment, the gate G and the first signal line 120 may be the same layer, and the source S, the drain D and the second signal line 130 may be the same layer, but the invention is not limited thereto. Also, in the present embodiment, the gate G may be located between the channel CH and the substrate 110, the source S and the drain D may be located at an upper side of the channel CH, and the gate G may be located at a lower side of the channel CH. In other words, the active device T of the present embodiment is illustrated by using a bottom gate thin film transistor (bottom gate TFT) as an example, but the invention is not limited thereto.

In one embodiment, in the liquid crystal display panel (e.g., the liquid crystal display panel 200) formed by the pixel structure 100, the light shielding layer (e.g., the light shielding layer 212) of the liquid crystal display panel (e.g., the liquid crystal display panel 200) may overlap with the first signal line 120, the second signal line 130, the active device T and/or the connection hole TH of the pixel unit PU.

In this embodiment, the pixel structure 100 may further include a connection line 190. The connection line 190 may cross the second signal line 130. The first common electrode 160 of the pixel unit PU may be electrically connected to the connection line 190, such that the first common electrode 160 may be electrically connected to a common electrode (not shown) and/or a common voltage source of other pixel units (not shown) through the connection line 190.

In the present embodiment, the extending direction of the connection line 190 is substantially parallel to the extending direction of the first signal line 120, but the present invention is not limited thereto.

In an embodiment (not shown), the second common electrode 170 may be electrically connected to common electrodes (not shown) of other pixel units (not shown) and/or a common voltage source through similar components (e.g., components similar to the connection line 190). Alternatively, the conductive film layer further extending from the second common electrode 170 of the pixel unit PU may further cross the second signal line 130 and electrically connect to a common electrode (e.g., similar to the second common electrode 170 of the pixel unit PU) of another pixel unit (not shown, may be located at the adjacent side of the pixel unit PU).

The first common electrode 160 includes a plurality of first comb electrodes 164. In the embodiment, a ratio (L/S) of a line width 164L to a line distance 164S of the first comb electrode 164 is greater than or equal to 0.3 and less than 2.0, but the invention is not limited thereto.

The second pixel electrode 150 includes a plurality of second comb electrodes 154. In the embodiment, the ratio of the line width 154L of the second comb electrodes 154 to the line spacing 154S is greater than or equal to 0.3 and less than 2.0, but the invention is not limited thereto.

The first pixel electrode 140 includes a light-transmitting conductive material. The second pixel electrode 150 includes a light-transmitting conductive material. The first common electrode 160 includes a light-transmitting conductive material. The second common electrode 170 includes a light-transmitting conductive material. The materials of the first pixel electrode 140, the second pixel electrode 150, the first common electrode 160 and the second common electrode 170 may be the same as, similar to or different from each other, and the invention is not limited thereto. The transparent conductive material is, for example, Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), Aluminum Tin Oxide (ATO), Aluminum Zinc Oxide (AZO), or other suitable metal Oxide, or a stacked layer of at least two of the foregoing, but the invention is not limited thereto.

In the embodiment, the first pixel electrode 140 and the second common electrode 170 may be the same film layer (however, the first pixel electrode 140 and the second common electrode 170 are not electrically connected to each other), but the invention is not limited thereto.

In one embodiment, in the top view state, the distance L1 between the first pixel electrode 140 and the second common electrode 170 is greater than 5 μm. Thus, a process window (process window) can be obtained.

In the embodiment, the first common electrode 160 and the second pixel electrode 150 may be the same layer (but the first common electrode 160 and the second pixel electrode 150 are not electrically connected to each other), but the invention is not limited thereto.

In the present embodiment, the range R1 of the first pixel electrode 140 and the first common electrode 160 in the first area a1, which are vertically projected on the substrate 110, has a first area, and the range R2 of the second common electrode 170 and the second pixel electrode 150 in the second area a2, which are vertically projected on the substrate 110, has a second area, which is larger than the first area. Therefore, in a liquid crystal display panel (e.g., liquid crystal display panel 200) constructed by the pixel structure 100, the luminous intensity of the first region A1 corresponding to the pixel unit PU can be the same as or similar to the luminous intensity of the second region A2 corresponding to the pixel unit PU. Thus, the liquid crystal display panel (e.g., the liquid crystal display panel 200) formed by the pixel structure 100 has a better wide viewing angle, and the display quality can be improved.

According to coulomb's law, the electric field strength generated by a point charge is proportional to the amount of charge it carries and inversely proportional to the square of the distance. In other words, the electric field is not so much affected, but the strength is weaker as the distance increases. That is, in the liquid crystal display panel (e.g., the liquid crystal display panel 200) constituted by the pixel structure 100, the range of the vertical projection of the liquid crystal layer (e.g., the liquid crystal layer 230) on the substrate 110, which can be rotated or switched by the electric field generated between the first pixel electrode 140 and the first common electrode 160, can be equally covered by the first area. Similarly, in the liquid crystal display panel (e.g., the liquid crystal display panel 200) formed by the pixel structure 100, the range of the liquid crystal layer (e.g., the liquid crystal layer 230) that can be rotated or switched by the electric field generated between the second pixel electrode 150 and the second common electrode 170, which is vertically projected onto the substrate 110, can be equally covered by the aforementioned second area. At the level of the pixel structure 100, the range R1 of the first area may be a union of the range of the first pixel electrode 140 located in the first region a1 vertically projected on the substrate 110 and the range of the first common electrode 160 vertically projected on the substrate 110, or the union range may be expanded outward to a range generally understood by those skilled in the art (e.g., a range that is not substantially influenced, interfered, or shielded by the electric field of other electronic elements, or a range that is substantially defined by other specific elements) and may be equally covered by the range R1 of the first area. Similarly, the range R2 of the second area may be a union of the range of the second pixel electrode 150 in the second region a2 vertically projected on the substrate 110 and the range of the second common electrode 170 vertically projected on the substrate 110, or the union range may be expanded outward to a range generally understood by those skilled in the art (e.g., a range that is not substantially influenced, interfered or shielded by the electric field of other electronic components, or a range that is substantially defined by other specific components) and may be covered by the range R2 of the second area.

For example, as shown in fig. 1, the range R1 of the first area may be a range R1 of a closed contour formed by vertically projecting the first pixel electrode 140 and the first common electrode 160 located in the first region a1 on the substrate 110 and respectively projecting the central lines of two adjacent second signal lines 130 on the substrate 110. For another example, as shown in fig. 1, the range R2 of the second area may be a range R2 of a closed contour formed by the second pixel electrode 150 and the second common electrode 170 in the second region a2 being vertically projected on the substrate 110 and the central lines of two adjacent second signal lines 130 being projected on the substrate 110. Of course, as described in the previous paragraphs, the range R1 of the first area and the range R2 of the second area can be equally expanded and covered according to the range generally understood by those skilled in the art of the present invention or according to the range of the liquid crystal layer (e.g., the liquid crystal layer 230) projected onto the substrate 110 under the influence of the electric field.

In an embodiment, a ratio of the line width 164L to the line spacing 164S of the first comb electrode 164 may be 0.3, a ratio of the line width 154L to the line spacing 154S of the second comb electrode 154 may be 0.3, and the first area may be the same as or similar to the second area, but the invention is not limited thereto.

In an embodiment, a ratio of the line width 164L to the line spacing 164S of the first comb electrode 164 is greater than 0.3 and less than 2.0, a ratio of the line width 154L to the line spacing 154S of the second comb electrode 154 is greater than 0.3 and less than 2.0, and the second area may be 2.4 times to 3.5 times the first area, but the invention is not limited thereto.

Test example:

in order to prove that the pixel structure of the present invention can improve the bending effect, the following test examples are particularly used as illustrations. However, these test examples are not to be construed in any way as limiting the scope of the present invention. Referring to fig. 3, in the following test examples, for example, the flexoelectric effect of different pixel structures may be simulated by simulation software commonly used in the art, wherein the pixel structure of each test example is similar to the pixel structure of the previous embodiment, and the difference is that the ratio of the line width to the line distance of the first comb-shaped electrode or the second comb-shaped electrode is different in the different test examples. In fig. 3, the horizontal axis is a ratio of a line width to a line distance of the first comb-shaped electrode or the second comb-shaped electrode, the vertical axis is a relative bending effect ratio (relative piezoelectric ratio), the solid line is a relative bending effect ratio of the first comb-shaped electrode having a different ratio of the line width to the line distance and the corresponding first comb-shaped electrode, and the dotted line is a relative bending effect ratio of the second comb-shaped electrode having a different ratio of the line width to the line distance and the corresponding second comb-shaped electrode.

In the following description of the test example, the first pixel electrode may be similar to, but not limited to, the aforementioned first pixel electrode 140, the second pixel electrode may be similar to, but not limited to, the aforementioned second pixel electrode 150, the second comb electrode may be similar to, but not limited to, the aforementioned second comb electrode 154, the line width of the second comb electrode may be similar to, but not limited to, the aforementioned line width 154L, the line distance of the second comb electrode may be similar to, but not limited to, the aforementioned line distance 154S, the first common electrode may be similar to, but not limited to, the aforementioned first comb electrode 160, the first comb electrode may be similar to, but not limited to, the aforementioned first comb electrode 164, the line width of the first comb electrode may be similar to, but not limited to, the aforementioned line distance 164L, the line distance of the first comb electrode may be similar to, but not limited to, the aforementioned second common electrode 170, the first area may be similar to, but not limited to, the first area of range R1 described above, and the second area may be similar to, but not limited to, the second area of range R2 described above.

Referring to fig. 3, at a position where the ratio of the line width to the line distance of the first comb electrode is about 0.3, and at a position where the ratio of the line width to the line distance of the second comb electrode is about 0.3, the area ratio of the first area to the second area can be adjusted to 1:1, so as to achieve the display compensation effect, and the display panel formed by the pixel structure can have a better wide viewing angle and improve the display quality.

Referring to fig. 3, in a range where a ratio of a line width to a line distance of the first comb electrodes is less than 0.3, a fluctuation (fluctuation) of a corresponding value of the bending effect is large. The reason for this is probably because although the positive and negative charge accumulation during the switching process between the electrodes (e.g., between the first pixel electrode and the first common electrode) is small, the opposite effect of the charge accumulation difference may be exhibited due to the relatively large operating voltage. Moreover, if the ratio of the line width to the line distance is smaller than 0.3, the relative process tolerance is smaller, and the actual ratio of the line width to the line distance is slightly shifted due to the problems in the process, so as to influence the corresponding value of the bending effect, and thus the design of the wiring (layout) is difficult.

Referring to fig. 3, in a range where a ratio of a line width to a line distance of the second comb-shaped electrode is less than 0.3, a corresponding value of the flexoelectric effect fluctuates greatly. The reason for this is likely because although the positive and negative charge accumulation during switching between the electrodes (e.g., between the second pixel electrode and the second common electrode) is small, the opposite effect of the charge accumulation difference may be exhibited due to the relatively large operating voltage. Moreover, if the ratio of the line width to the line distance is smaller than 0.3, the relative process tolerance is smaller, and the actual ratio of the line width to the line distance is slightly shifted due to the problems in the process, so that the corresponding value of the bending effect is affected, and the design of the wiring is difficult.

Referring to fig. 3, in the range where the ratio of the line width to the line pitch of the first comb electrodes is greater than 2.0, the liquid crystal efficiency may be reduced due to the larger line width to line pitch ratio. In addition, it is likely that the display quality is affected by the improvement of the influence of the flexoelectric effect due to the large accumulation of positive and negative charges between the electrodes (e.g., between the first pixel electrode and the first common electrode) during the switching process.

Referring to fig. 3, in the range where the ratio of the line width to the line pitch of the second comb electrodes is greater than 2.0, the liquid crystal efficiency may be reduced due to the larger line width to line pitch ratio. In addition, although the influence of the flexoelectric effect is reduced, the range of the second region may need to be increased more, so as to reduce the influence caused by the charge accumulation. Therefore, display quality may still be affected.

In summary, in the pixel structure of the invention, the first region and the second region have opposite electric field directions, so as to reduce the influence caused by charge accumulation and improve the display quality. Furthermore, the ratio of the line width to the line distance of the first comb-shaped electrode is more than or equal to 0.3 and less than 2.0, and the ratio of the line width to the line distance of the second comb-shaped electrode is more than 0.3 and less than 2.0, so that the influence caused by the flexoelectric effect can be reduced, the possibility of generating flicker during low-frequency operation can be further reduced, and the display quality is further improved.

In the foregoing embodiment, the active device (e.g., the active device T) and another active device (not shown) and a capacitor (not shown) in the foregoing embodiment may be electrically connected, and may be simply referred to as two active devices and a capacitor (which may be referred to as 2T 1C). In other embodiments, the number of active devices (e.g., active device T) and other active devices and capacitors in each pixel structure may vary depending on design, and may be referred to as three active devices and one or two capacitors (e.g., 3T1C/2C), four active devices and one or two capacitors (e.g., 4T1C/2C), five active devices and one or two capacitors (e.g., 5T1C/2C), six active devices and one or two capacitors (e.g., 6T1C/2C), or other suitable circuit configurations.

In the above embodiments, at least one of the active devices (e.g., the active device T) may be a Thin Film Transistor (TFT), such as a bottom gate transistor, a top gate transistor, a vertical transistor, or other suitable transistors. The gate of the bottom-gate transistor is either below the channel (e.g., channel CH), the gate of the top-gate transistor is either above the channel (not shown), and the channel (not shown) of the vertical transistor extends out of plane. The channel (e.g., but not limited to channel CH) may be a single layer or a multi-layer structure, and the material thereof includes amorphous silicon, microcrystalline silicon, nanocrystalline silicon, polycrystalline silicon, single crystal silicon, organic semiconductor material, oxide semiconductor material, carbon nanotubes/rods, perovskite material, or other suitable material or combination thereof.

In the foregoing embodiments, the conductive layer may be a single layer or a multi-layer structure. In the case of a conductive layer having a multi-layer structure, the multi-layer structure may not have an insulating material therebetween.

In the foregoing embodiments, the insulating layer may have a single-layer structure or a multi-layer structure. In the case of the insulating layer having a multi-layer structure, the multi-layer structure may not have a conductive material therebetween.

In summary, although the present invention has been disclosed by the above embodiments, the embodiments are only for explaining the present invention and not for limiting the present invention, and any person skilled in the art can make some changes and improvements without departing from the spirit and scope of the present invention, so the scope of the present invention is subject to the claims.

Claims (10)

1. A pixel structure, comprising:

a substrate;

a first signal line disposed on the substrate; and

a pixel unit disposed on the substrate and having a first region and a second region on opposite sides of the first signal line, the pixel unit including:

a first pixel electrode at least located in the first region;

a first common electrode located in the first region and on the first pixel electrode;

a second common electrode located in the second region;

a second pixel electrode at least located in the second region and on the second common electrode;

an insulating layer between the first pixel electrode and the first common electrode and between the second common electrode and the second pixel electrode; and

a connection hole between the first region and the second region and at least penetrating through the insulation layer, the first pixel electrode and the second pixel electrode being electrically connected via the connection hole, wherein:

the first common electrode comprises a light-transmitting conductive material;

the first pixel electrode comprises a light-transmitting conductive material;

the second pixel electrode comprises a light-transmitting conductive material;

the second common electrode includes a light-transmissive conductive material;

the first common electrode comprises a plurality of first comb-shaped electrodes; and is

The second pixel electrode includes a plurality of second comb electrodes.

2. The pixel structure of claim 1, wherein:

the ratio of the line width to the line distance of the first comb-shaped electrodes is more than or equal to 0.3 and less than 2.0; and is

The ratio of the line width to the line distance of the second comb electrodes is greater than or equal to 0.3 and less than 2.0.

3. The pixel structure of claim 1, further comprising:

a plurality of second signal lines, wherein the pixel unit is located between the adjacent second signal lines, and the extending direction of the second signal lines is different from the extending direction of the first signal lines, wherein:

the range of the first pixel electrode and the first common electrode in the first area, which are vertically projected on the substrate, has a first area;

the range of the second common electrode and the second pixel electrode in the second area, which are vertically projected on the substrate, has a second area; and is

The second area is greater than or equal to the first area.

4. The pixel structure of claim 3, wherein:

the ratio of the line width to the line distance of the first comb-shaped electrodes is more than 0.3 and less than 2.0;

the ratio of the line width to the line distance of the second comb-shaped electrodes is more than 0.3 and less than 2.0; and is

The second area is 2.4 to 3.5 times the first area.

5. The pixel structure of claim 1, further comprising:

a plurality of second signal lines, wherein the pixel unit is located between the adjacent second signal lines, and the extending direction of the second signal lines is different from the extending direction of the first signal lines; and

and the connecting wire is electrically connected to the first common electrode of the pixel unit and crosses the second signal wires.

6. The pixel structure of claim 5, wherein the connection line extends substantially parallel to the first signal line.

7. The pixel structure of claim 1, wherein:

the first pixel electrode includes a first protruding portion extending from the first region to the second region;

the second common electrode has a concave portion;

the connecting hole is positioned in the concave part; and is

The first protruding part covers the connecting hole, so that the first pixel electrode and the second pixel electrode are electrically connected through the connecting hole.

8. The pixel structure of claim 7, wherein a spacing between the first pixel electrode and the second common electrode is greater than 5 microns.

9. The pixel structure of claim 1, wherein:

the second pixel electrode includes a second protruding portion extending from the second region to the first region;

the second common electrode has a concave portion;

the connecting hole is positioned in the concave part; and is

The second protrusion covers the connection hole, so that the first pixel electrode and the second pixel electrode are electrically connected through the connection hole.

10. The pixel structure of claim 1, further comprising:

and the active element comprises a grid electrode, a drain electrode and a source electrode, wherein the grid electrode is electrically connected with the first signal line, and the drain electrode is electrically connected with the first pixel electrode and the second pixel electrode.

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