CN110231506B - Current detection circuit and exhaust gas recirculation control circuit provided with same - Google Patents

Current detection circuit and exhaust gas recirculation control circuit provided with same Download PDF

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CN110231506B
CN110231506B CN201810179305.1A CN201810179305A CN110231506B CN 110231506 B CN110231506 B CN 110231506B CN 201810179305 A CN201810179305 A CN 201810179305A CN 110231506 B CN110231506 B CN 110231506B
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switching element
current detection
mos transistor
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current
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CN110231506A (en
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骆明星
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Hitachi Anstamo Automotive Systems Suzhou Co ltd
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    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0092Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only

Abstract

The present invention relates to a current detection circuit and an exhaust gas recirculation control circuit having the same, including: a current detection unit; a1 st switching element having one end connected to a power source and the other end connected to a load; and a2 nd switching element having one end connected between the 1 st switching element and the power supply and the other end connected in series to the current detection resistor, the other end of the current detection resistor being connected between the 1 st switching element and the load, the 1 st switching element and the 2 nd switching element being switched on and off in synchronization with each other in accordance with the PWM control signal, and a ratio of on-resistances of the 1 st switching element and the 2 nd switching element being a predetermined value.

Description

Current detection circuit and exhaust gas recirculation control circuit provided with same
Technical Field
The present invention relates to a current detection circuit for detecting a current when a circuit is operating normally, and an exhaust gas recirculation control circuit including the current detection circuit.
Background
In the existing exhaust gas recirculation Control loop of an Electronic Control Unit (ECU), a current detection method is to use a precision current detection resistor connected in series in the loop, and monitor the loop working current by measuring the voltage across the precision current detection resistor. In the prior art, as shown in fig. 5(a), a current detection resistor R is connected in series in a loopshunt1To monitor the loop operating current, the current detecting resistor Rshunt1Is a precision resistor with a very small resistance value, for example, 3m omega. When current flows through the resistor Rshunt1To the external coil PA, at the current detection resistor Rshunt1Voltage drop across is URshunt1=IRshunt1*Rshunt1. The amplifier A1 detects the current to the resistor Rshunt1Voltage drop U acrossRshunt1Feeding back to the CPU of the main chip after operational amplification processing, thereby calculating corresponding current I through an internal programRshunt1
Disclosure of Invention
Technical problem to be solved by the invention
When an automobile normally works, the oil consumption of one hundred kilometers is a problem which is more and more concerned by people, and therefore the energy loss and the like of components inside the automobile are required to be reduced to the minimum degree. However, in the circuit described in patent document 1, since the current detection resistor is always in the circuit, when the circuit is normally operated, the circuit current is large, and the power consumed at both ends of the current detection resistor is large, which leads to a reduction in the power use efficiency and an increase in fuel consumption.
In addition, when the loop is disconnected, a diode with larger reverse breakdown voltage and forward current is used as an inductance freewheeling diode for eliminating the damage of larger induced current and voltage generated by an inductance coil to other electronic components when the switching element is turned off. The diode has high power loss and large heat generation, which greatly influences the endurance life of the product.
The present invention has been made in view of the above circumstances, and an object thereof is to provide a current detection circuit capable of reducing power consumption during normal operation and reducing the amount of heat generated during shutdown, and an exhaust gas recirculation control circuit including the current detection circuit.
Technical scheme for solving technical problem
The current detection circuit according to the present invention includes: a current detection unit; a1 st switching element, one end of the 1 st switching element being connected to a power source, the other end being connected to a load; and a2 nd switching element having one end connected between the 1 st switching element and the power supply and the other end connected in series to the current detection resistor, the other end of the current detection resistor being connected between the 1 st switching element and the load, the 1 st switching element and the 2 nd switching element being switched on and off in synchronization with each other in accordance with a PWM control signal, and an on resistance ratio between the 1 st switching element and the 2 nd switching element being a predetermined value.
Effects of the invention
According to the current detection circuit and the exhaust gas recirculation control circuit provided with the current detection circuit of the present invention, power consumption during normal operation can be reduced, and heat generation during shutdown can be reduced.
Drawings
Fig. 1(a) is a circuit diagram showing a configuration of a current detection circuit according to embodiment 1 of the present invention, and fig. 1(b) is an equivalent circuit diagram thereof.
Fig. 2 is a timing chart of the PWM generator according to embodiment 1 of the present invention.
Fig. 3(a) is a circuit diagram showing a configuration of a current detection circuit according to embodiment 2 of the present invention, and fig. 3(b) is an equivalent circuit diagram thereof.
Fig. 4 is a timing chart of the PWM generator according to embodiment 2 of the present invention.
Fig. 5(a) is a circuit diagram showing a configuration of a conventional current detection circuit as a comparative example, and fig. 5(b) is an equivalent circuit diagram thereof.
Detailed Description
In the following, preferred embodiments of the current detection circuit according to the present invention will be described with reference to the drawings, but the same or corresponding portions in the drawings will be described with the same reference numerals.
Embodiment 1.
Fig. 1(a) is a circuit diagram showing a configuration of a current detection circuit 1 according to embodiment 1 of the present invention, and fig. 1(b) is an equivalent circuit diagram thereof. As shown in fig. 1(a), the current detection circuit 1 is connected to an external load, here, an external coil PB. The current detection circuit 1 includes: MOS sensor S1 and current detection resistor Rshunt2Amplifier a2, PWM generator 3, power supply 2. The MOS sensor S1 includes two switching element MOS transistors T1 and T1'. The MOS transistor T1 in the MOS sensor S1 has one end connected to the power supply 2 and the other end connected to the external coil PB. One end of a MOS transistor T1' in the MOS sensor S1 is connected between the MOS transistor T1 and the power supply 2, and the other end is connected to a current detection resistor Rshunt2Are connected in series. Current detection resistor Rshunt2And the other end thereof is connected between the MOS transistor T1 and the external coil PB. The amplifier A2 is connected to the current detection resistor Rshunt2By applying a current to the detection resistor Rshunt2Voltage drop U acrossRshunt2Feeding back to the CPU of the main chip after operational amplification processing, thereby calculating the corresponding current IRshunt2To monitor whether loop current is flowing.
The power supply 2 outputs a power supply voltage U to the MOS transistor T1 and the MOS transistor T1 'in the MOS sensor S1, and the PWM generator 3 generates a square wave PWM signal HS PWM for controlling on and off of the MOS transistor T1 and the MOS transistor T1' in the MOS sensor S1, and outputs the signal HS PWM to the MOS sensor S1. The PWM generator 3 outputs the same square wave PWM signal HS PWM to the MOS transistor T1 and the MOS transistor T1 ', and thus the MOS transistor T1 and the MOS transistor T1' are controlled to be turned on or off synchronously.
Fig. 2 is a timing diagram of the PWM generator 3, showing the relationship between the square wave PWM signal HS PWM generated by the PWM generator 3 and the clock signal CLK. In FIG. 2, the horizontal axis represents time, and the vertical axis represents inputThe levels of the square wave PWM signal HS PWM and the clock signal CLK over time entering the MOS transistor T1 and the MOS transistor T1'. Within a period T, at TonIn the period (2), the MOS transistors T1 and T1' are switched to ON, so that a current flows through the current detection resistor Rshunt2And an external load PB at ToffIn the period (2), the MOS transistors T1 and T1' are switched from the on state to the off state, and the normal operating current flowing from the power supply 2 does not flow through the current detection resistor R any moreshunt2And an external load PB.
Here, as a switching element for turning on and off the circuit, a new semiconductor element MOS sensor S1 is used, and this semiconductor element MOS sensor S1 has the following characteristics: the on-resistances (R) of the two switching elements MOS transistor T1 and MOS transistor T1T1on:RT1’onK) is the ratio of the on areas of the MOS transistor T1 and the MOS transistor T1'. That is, the on-resistance ratio of the MOS transistors T1 and T1 'is the inverse ratio of the currents flowing through the MOS transistors T1 and T1'. Therefore, if the area of the MOS transistor T1 is made much smaller than the area of the MOS transistor T1', the current flows through the current detection resistor Rshunt2Can be reduced much, and the resistance R is detected by the currentshunt2Losses due to voltage drop across can also be reduced. However, when the circuit is normally operated, no power is used (the MOS transistors T1 and T1' and the current detection resistor R in the MOS sensor S1)shunt2Power consumed) is minimum, and an appropriate on-resistance ratio k must be considered, where k is 1 in the present embodiment.
Next, the power consumption when the current detection circuit 1 of embodiment 1 is operating normally will be discussed.
When MOS transistor T1 and MOS transistor T1' are turned on, i.e. HS PWM is at T in FIG. 2onWhen the switch in fig. 1(b) is turned on, the power supply voltage is U, and the on-resistances R of the MOS transistors T1 and T1' are set to UT1on=RT1’on=Ron2(RT1on:RT1’onK is 1), and the voltage across the MOS transistor T1 and the MOS transistor T1' is URT1onCurrent detecting resistorIs Rshunt2The equivalent resistance value of the external coil PB is RL2An equivalent inductance value of L2Voltage at both ends is UL3The current flowing through the outer coil PB is iL3From Kirchhoff's Law (KLV), the following formula (1) can be obtained.
Figure BDA0001588281720000041
By bringing relevant physical quantities, the current i flowing through the external coil PB is knownL3The relationship shown in the following equation (2) is established with the power supply voltage U.
Figure BDA0001588281720000042
The following equation (3) can be obtained by solving the non-homogeneous linear equation of the above equation (2).
Figure BDA0001588281720000043
Therefore, the useless power consumed by the current detection circuit 1 of the present embodiment in one cycle is represented by the following expression (4).
Figure BDA0001588281720000044
To specifically explain the improvement effect of the present embodiment on the reduction of power consumption, the power consumption of the current detection circuit 1 of the present embodiment is compared with the power consumption of the conventional current detection circuit 10 as a comparative example.
Fig. 5(a) is a circuit diagram showing a configuration of a conventional current detection circuit 10 as a comparative example, and fig. 5(b) is an equivalent circuit diagram thereof. As shown in fig. 5(a), the current detection circuit 10 is connected to an external load, here, an external coil PA. The current detection circuit 10 includes: n-type MOS transistor T and current detection resistor Rshunt1Amplifier a1, PWM generator 30, power supply 20, and freewheeling diode D1. One terminal of the MOS transistor T is connected to the power supply 20,the other end and a current detection resistor Rshunt1Are connected in series. Current detection resistor Rshunt1And the other end thereof is connected to the external coil PA. One end of a freewheeling diode D1 is connected to the MOS transistor T and the current detection resistor Rshunt1And the other end is grounded. The freewheeling diode D1 is used to cancel the forward and reverse sense currents generated by the external coil PA when the MOS transistor T is turned off. The amplifier A1 is connected to the current detection resistor Rshunt1By applying a current to the detection resistor Rshunt1Voltage drop U acrossRshunt1Feeding back to the CPU of the main chip after operational amplification processing, thereby calculating the corresponding current IRshunt1To monitor whether loop current is flowing.
The timing chart of the PWM generator 30 is the same as that of the PWM generator 3 according to embodiment 1. When the MOS transistor T is turned on, i.e. the switch is turned to 1 in FIG. 5(b), at TonThe period of time (c). The power supply voltage is U, and the voltage at two ends of the MOS transistor T is URon1On-resistance of Ron1Current detecting resistor Rshunt1Has a voltage of U at both endsRshunt1The equivalent resistance value of the external coil PA is RL1An equivalent inductance value of L1Voltage at both ends is UL1The current flowing through the external coil PA is iL1From Kirchhoff's Law (KLV), the following formula (5) can be obtained.
Figure BDA0001588281720000051
By bringing relevant physical quantities into it, the current i flowing through the external coil PA is knownL1The relationship shown in the following equation (6) holds with the power supply voltage U.
Figure BDA0001588281720000052
The following equation (7) can be obtained by solving the non-homogeneous linear equation of the above equation (6).
Figure BDA0001588281720000053
Therefore, the useless power consumed by the conventional current detection circuit 10 in one cycle is represented by the following equation (8).
Figure BDA0001588281720000061
According to past design experience, the power supply voltage U is set to be 14V, and the current detection resistor Rshunt2=Rshunt13m omega, MOS transistor T on-resistance Ron1The on-resistance R of the MOS transistor T1 and the MOS transistor T1' in the MOS sensor S1 is 0.5 Ωon20.5 Ω, duty of PWM generator Ton/(Ton+Toff)50%, equivalent resistance R of external coils PA and PBL1=RL27.6 omega and equivalent inductance L1=L2=35.5mH。
Therefore, when the circuit is operating normally, the useless power saving rate consumed in one cycle is the following expression (9).
Figure BDA0001588281720000062
That is, on the premise that the power supply voltage, the current detection resistance, the on-resistance of the switching element, the resistance value of the external coil, the inductance value, and the like are the same, the current detection circuit 1 of the present embodiment can save about 46.9% of the wasteful power as compared with the conventional current detection circuit 10. Therefore, by using the current detection circuit 1 according to embodiment 1, the effect of reducing power consumption during normal operation can be achieved.
Embodiment 2.
Fig. 3(a) is a circuit diagram showing the configuration of a current detection circuit 1A according to embodiment 2 of the present invention, and fig. 3(b) is an equivalent circuit diagram thereof. The current detection circuit 1A according to embodiment 2 is different from the current detection circuit 1 according to embodiment 1 in that the current detection circuit 1A further includes a MOS sensor S2, and the PWM generator 3A is used instead of the PWM generator 3 in the current detection circuit 1. The MOS sensor S2 includes two switching elements, a MOS transistor T2 and a MOS transistor T2'.
In fig. 3, the same components as those in fig. 1 are denoted by the same reference numerals, and description thereof is omitted. Hereinafter, only the differences will be described in detail.
In order to cancel the forward and reverse induced currents generated in the external coil PB when the MOS transistor T1 and the MOS transistor T1' of the MOS sensor S1 are turned off, the current detection circuit 1A is provided with a MOS sensor S2 in addition to the current detection circuit 1. One end of the MOS transistor T2 in the MOS sensor S2 is connected between the MOS transistor T1 and the external coil PB, and the other end is grounded, and one end of the MOS transistor T2 'in the MOS sensor S2 is connected between the MOS transistor T1' and the current detection resistor Rshunt2And the other end is grounded.
The PWM generator 3A generates a square wave PWM signal HS PWM for controlling on and off of the MOS transistor T1 and the MOS transistor T1 'in the MOS sensor S1 and a square wave PWM signal LSPWM for controlling on and off of the MOS transistor T2 and the MOS transistor T2' in the MOS sensor S2, and outputs the signal HS PWM to the MOS sensor S1 and the signal LS PWM to the MOS sensor S2. Similarly, since the PWM generator 3A outputs the same square wave PWM signal LS PWM to the MOS transistor T2 and the MOS transistor T2 ', the MOS transistor T2 and the MOS transistor T2' are controlled to be turned on or off synchronously.
Fig. 4 is a timing diagram of the PWM generator 3A, showing the relationship between the square wave PWM signal HS PWM, the square wave PWM signal LS PWM, and the clock signal CLK generated by the PWM generator 3A. In fig. 4, the horizontal axis represents time, and the vertical axis represents the levels of the square wave PWM signal HS PWM input to the MOS transistor T1 and the MOS transistor T1 'in the MOS sensor S1, the square wave PWM signal LS PWM input to the MOS transistor T2 and the MOS transistor T2' in the MOS sensor S2, and the clock signal CLK over time. As can be seen from fig. 4, during one period T, the MOS transistors T1 and T1 'in the MOS sensor S1 and the MOS transistors T2 and T2' in the MOS sensor S2 are alternately switched. That is, when the MOS transistors T1 and T1 'in the MOS sensor S1 are turned on, the MOS transistors T2 and T2' in the MOS sensor S2 are turned off, and when the MOS transistors T1 and T1 'in the MOS sensor S1 are turned off, the MOS transistors T2 and T2' in the MOS sensor S2 are turned on.
The MOS transistor T2 and the MOS transistor T2' in the MOS sensor S2 similarly have on-resistances (R)T2on:RT2’onK) ratio is a characteristic of the ratio of the on areas of the MOS transistor T2 and the MOS transistor T2'. Here, similarly, k is 1.
Next, the amount of change in the internal temperature of the ECU when the current detection circuit 1A of embodiment 2 is off will be discussed.
When the MOS transistor T2 and the MOS transistor T2' in the MOS sensor S2 are turned on, that is, the HS PWM is at T in FIG. 4offWhen the power supply voltage is set to U, the on-resistances R of the MOS transistor T2 and the MOS transistor T2' are set toT2on=RT2’on=Ron3(RT2on:RT2’onK is 1), and the voltage across the MOS transistor T2 is URT2onThe current detection resistance is Rshunt2The equivalent resistance value of the external coil PB is RL2An equivalent inductance value of L2Voltage at both ends is UL4The current flowing through the outer coil PB is iL4I at instant of turn-offL4Represented by the following formula (10).
Figure BDA0001588281720000071
From Kirchhoff's Law (KLV), the following formula (11) can be obtained.
Figure BDA0001588281720000081
By bringing relevant physical quantities, the current i flowing through the external coil PB is knownL4The relationship shown in the following equation (12) holds with the power supply voltage U.
Figure BDA0001588281720000082
Therefore, the power consumed by the MOS transistor T2 and the MOS transistor T2' in the current detection circuit 1A during one cycle is expressed by the following expression (13).
Figure BDA0001588281720000083
Therefore, in one cycle, the MOS transistor T2 and the MOS transistor T2' in the current detection circuit 1A cause the ECU internal temperature variation Δ T2Represented by the following formula (14).
ΔT2=PMOS2 Rth2 (14)
Here, Rth2 is 1.0K/W, which is the thermal resistance of MOS sensor S2.
To specifically explain the effect of the present embodiment on the improvement of the amount of heat generation at the time of shutdown, the current detection circuit 10 of fig. 5 in the related art is used as a comparative example, and compared with the amount of heat generation at the time of shutdown in the current detection circuit 1A of the present embodiment.
In the current detection circuit 10 of fig. 5, the freewheeling diode D1 is used to cancel the forward and reverse induced currents generated by the external coil PA. When the MOS transistor T is turned off, i.e. at T in FIG. 2offThe period of time (c). Setting the power supply voltage as U, and the current detection resistor Rshunt1Has a voltage of U at both endsRshunt1The voltage across the diode D1 is UFThe equivalent resistance value of the external coil PA is RL1An equivalent inductance value of L1Voltage at both ends is UL2The current flowing through the external coil PA is iL2I at instant of turn-offL2Represented by the following formula (15).
Figure BDA0001588281720000084
From Kirchhoff's Law (KLV), the following formula (16) can be obtained.
Figure BDA0001588281720000085
Bringing in relevant physical quantities to obtain the turn-off of the MOS transistor TCurrent iL2Satisfies the following formula (17).
Figure BDA0001588281720000086
By solving the non-homogeneous linear equation of the above equation (17), the following equation (18) can be obtained.
Figure BDA0001588281720000091
Therefore, the power consumption of the diode D1 in the current detection circuit 10 during one cycle is expressed by the following equation (19).
Figure BDA0001588281720000092
Therefore, the diode D1 in the current detection circuit 10 causes the ECU internal temperature variation Δ T in one cycle1Represented by the following formula (20).
ΔT1=pD1 Rth1 (20)
Here, Rth1 is 12 ℃/W, and is the thermal resistance of the diode D1.
Similarly, according to the past design experience, the power supply voltage U is set to 14V, and the current detection resistor R is set toshunt2=Rshunt13m Ω, on-resistance R of MOS transistors T2 and T2' in the MOS sensor S2on30.5 Ω, duty of PWM generator Ton/(Ton+Toff)50%, equivalent resistance R of external coils PA and PBL1=RL27.6 omega and equivalent inductance L1=L235.5mH, diode D1 forward conduction voltage UF=2V。
Therefore, in the conventional current detection circuit 10, at the time of turn-off, the amount of change Δ T in the increase in the internal temperature of the ECU in one cycle due to the diode D11=PD1*Rth1=3.1176℃=276.1176K。
On the other hand, in the current detection circuit 1A of embodiment 2, MOS conduction is used at the time of shutdownChange amount Δ T of increase in internal temperature of ECU in one cycle due to sensor S22=PMOS2*Rth2=0.0018K。
Due to Delta T2Much less than Δ T1Therefore, according to the current detection circuit 1A of embodiment 2, in addition to the effect of reducing power consumption during normal operation, the amount of heat generated during circuit shutdown can be greatly reduced.
Further, by simulating the current detection circuit 1A according to embodiment 2, it is understood that the current detection circuit 1A can achieve the same function as the conventional current detection circuit 10, and that the current is smoother in terms of the consumption of the coil induced voltage, no oscillation occurs, and the induced voltage value is significantly smaller than that of the conventional art.
In the present invention, the current detection circuit is applied to the egr control circuit, but may be applied to other circuits in which current detection is required.
In the present invention, a MOS sensor including two switching elements is used as the switching element, but other switching elements such as a field effect transistor and a transistor may be used as long as the on-resistance ratio is a predetermined value. In the present invention, the on-resistance ratio between the MOS transistor T1 and the MOS transistor T1 'in the MOS sensor S1 and the on-resistance ratio between the MOS transistor T2 and the MOS sensor T2' in the MOS sensor S2 are set to 1, but may be set to other values. In the present invention, the PWM generator is provided in the circuit, but the PWM generator may be provided outside the circuit and only outputs a signal to the MOS sensor S1 or the MOS sensor S2.
The present invention is capable of various embodiments and modifications without departing from the spirit and scope of the invention in its broadest form. The above embodiments are intended to illustrate the present invention, and do not limit the scope of the present invention. That is, the scope of the present invention is shown by the scope of claims, not by the embodiments. Various modifications made within the scope of the claims and within the scope of the equivalent meaning to the claims are also considered to be within the scope of the present invention.
Industrial application
The invention is suitable for loops which need to detect current, such as an exhaust gas recirculation control loop.
Description of the reference symbols
1. 1A, 10 current detection loop
2. 20 power supply
3. 3A, 30 PWM generator
S1 and S2 MOS sensors
T, T1, T1 ', T2 and T2' MOS transistors
Rshunt2、Rshunt1Current detection resistor
A1, A2 amplifier
PA, PB external coil
D1 diode

Claims (10)

1. A current sensing circuit, comprising:
a current detection unit having a current detection resistor;
a1 st switching element, one end of the 1 st switching element being connected to a power source, and the other end being connected to an external coil; and
a2 nd switching element having one end connected between the 1 st switching element and the power supply and the other end connected in series to the current detection resistor,
the other end of the current detection resistor is connected between the 1 st switching element and the external coil,
the 1 st switching element and the 2 nd switching element are switched on and off in synchronization with a PWM control signal,
the on-resistance ratio of the 1 st switching element to the 2 nd switching element is a predetermined value.
2. The current sensing circuit of claim 1, comprising:
a 3 rd switching element having one end connected between the 1 st switching element and the external coil and the other end grounded; and
a 4 th switching element having one end connected between the 2 nd switching element and the current detection resistor and the other end grounded,
the 3 rd switching element and the 4 th switching element are switched on and off in synchronization with a PWM control signal, and the 3 rd switching element and the 4 th switching element are turned on and off in reverse to the 1 st switching element and the 2 nd switching element.
3. Current detection loop according to claim 1 or 2,
the current detection unit further includes an amplifier.
4. Current detection loop according to claim 1 or 2,
the on-resistance ratio of the 1 st switching element to the 2 nd switching element is 1.
5. The current sensing circuit of claim 2,
the on-resistance ratio of the 3 rd switching element to the 4 th switching element is 1.
6. Current detection loop according to claim 1 or 2,
a MOS sensor including two switching elements is used as the 1 st switching element and the 2 nd switching element.
7. The current sensing circuit of claim 2,
a MOS sensor including two switching elements is used as the 3 rd switching element and the 4 th switching element.
8. The current sensing circuit of claim 6,
two switching elements as the 1 st switching element and the 2 nd switching element in the MOS sensor have a characteristic that an on-resistance ratio is equal to an on-area ratio.
9. The current sensing circuit of claim 7,
two switching elements as the 3 rd switching element and the 4 th switching element in the MOS sensor have a characteristic that an on-resistance ratio is equal to an on-area ratio.
10. An exhaust gas recirculation control circuit, comprising:
a current sensing circuit as claimed in any one of claims 1 to 9.
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CN1320300A (en) * 1999-06-18 2001-10-31 松下电器产业株式会社 Output controller
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CN1089043A (en) * 1992-09-21 1994-07-06 株式会社东芝 Power transistor overcurrent protection circuit
CN1320300A (en) * 1999-06-18 2001-10-31 松下电器产业株式会社 Output controller
CN1287403A (en) * 1999-07-08 2001-03-14 Tdk股份有限公司 Driving device for electric current controlling semiconductor switch element in power converter
CN203912295U (en) * 2013-07-02 2014-10-29 三垦电气株式会社 Led drive circuit

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