CN110224072B - Light-emitting device, preparation method thereof and display device - Google Patents
Light-emitting device, preparation method thereof and display device Download PDFInfo
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- CN110224072B CN110224072B CN201810175438.1A CN201810175438A CN110224072B CN 110224072 B CN110224072 B CN 110224072B CN 201810175438 A CN201810175438 A CN 201810175438A CN 110224072 B CN110224072 B CN 110224072B
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
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- H—ELECTRICITY
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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Abstract
The invention relates to a light-emitting device, a preparation method thereof and a display device, wherein the preparation method of the light-emitting device comprises the following steps: providing an anode, and depositing a hole functional material, a luminescent material and a cathode material in sequence to obtain a hole functional layer, a luminescent layer and a cathode; wherein the hole functional material comprises a metal oxide; the step of depositing the hole functional material further comprises a step of preparing a metal oxide by an aqueous solution method. According to the preparation method of the light-emitting device, the hole functional material is prepared by the aqueous solution method, the preparation process is simple, green and environment-friendly, and the application of the hole functional material in preparing the light-emitting layer is matched with the solution method.
Description
Technical Field
The invention relates to the field of display, in particular to a light-emitting device, a preparation method thereof and a display device.
Background
Metal oxides, e.g.MoO3NiO and V2O5And the like, are gradually considered as alternative materials to conventional hole function layer materials due to their good energy level structure and stability. Wherein, MoO3The method is of great interest due to its advantages such as wide energy level adjustment capability, deep energy level structure and wide band gap. Currently, in light emitting devices, MoO3The preparation method mainly comprises vacuum thermal deposition methods such as an evaporation method, a laser pulse deposition method and the like, and is not suitable for application of preparing the luminescent layer by using solution processing. While the conventional liquid phase preparation of MoO3Organic solvents are generally used, are not environmentally friendly, and in addition, the MoO prepared3The particle size distribution of the material is wide, the uniformity of the formed film is poor, and the overall performance of the luminescent device is greatly influenced.
Disclosure of Invention
In view of the above, it is necessary to provide a light emitting device, a method for manufacturing the same, and a display device.
A method of making a light emitting device comprising the steps of:
providing an anode, and depositing a hole functional material, a luminescent material and a cathode material in sequence to obtain a hole functional layer, a luminescent layer and a cathode;
wherein the hole functional material comprises a metal oxide;
the step of depositing the hole functional material further comprises a step of preparing a metal oxide by an aqueous solution method.
In one embodiment, the hole function layer is processed by a solution method, and the hole function layer includes at least one of a hole injection layer and a hole transport layer.
In one embodiment, the metal oxide comprises beta-MoO3Said beta-MoO3The particle size of (A) is 5 to 10 nm.
Due to beta-MoO in the prepared metal oxide3The particle size is small and uniform, the film forming uniformity can be improved, the film forming roughness is reduced, and the method is very suitable for being used as a hole functional layer in a QLED device.
In one embodiment, the step of preparing the metal oxide comprises:
providing an aqueous solution containing molybdenum salt;
adding an acidic substance while stirring, and adjusting the pH value of the solution system to be not more than 6;
continuously stirring for at least 24 hours to obtain a first solution containing nano particles;
adding a strong oxidant while stirring to obtain a second solution containing metal oxide;
drying to obtain the product.
According to the preparation method, water is used as a solvent, the metal oxide is synthesized at a low temperature under the action of acidity and a strong oxidant, and the preparation process is simple, green and environment-friendly. In addition, the prepared metal oxide has small and uniform particle size, can improve the film forming uniformity, reduce the roughness of formed films and improve the performance of devices, and is very suitable for being used as a device functional layer, especially as a cavity functional layer in a QLED device.
In the preparation method of the light-emitting device, the hole functional material is prepared into the beta-MoO with high work function by an aqueous solution method3The preparation process is simple and environment-friendly. In addition, the hole function layer can be prepared by a solution method, and the application of the hole function layer in the preparation of the luminous layer is matched well.
In one embodiment, the molybdenum salt in the aqueous solution containing molybdenum salt has a concentration of 0.005mol/L to 0.05mol/L, and the molybdenum salt comprises at least one of ammonium molybdate and ammonium molybdate hydrate.
In one embodiment, the acidic substance is a strong acid.
In one embodiment, the pH value of the solution system is adjusted to be 3-5.
In one embodiment, the strong oxidizer comprises an aqueous hydrogen peroxide solution having a concentration of 15 wt.% to 50 wt.%.
In one embodiment, the volume ratio of the hydrogen peroxide solution to the first solution is 1: 600-1: 1500.
In one embodiment, the method further comprises the following steps: after the deposition of the luminescent material, the method further comprises the step of depositing an electron transport material and/or an electron injection material to obtain an electron transport layer and/or an electron injection layer.
In one embodiment, the hole function layer is a hole injection layer, the hole function layer is prepared from the metal oxide through a film forming process, and the thickness of the prepared hole injection layer is 5-25 nm.
In one embodiment, the hole function layer is a hole injection layer, the hole function layer is directly formed by film formation from the second solution, and the film thickness of the prepared hole injection layer is 5-25 nm.
The invention also provides a luminescent device prepared by the preparation method.
According to the light-emitting device, the cavity functional material is prepared into the beta-MoO with uniform particle size and high work function by an aqueous solution method3The preparation process is simple, green and environment-friendly, the film forming uniformity of the hole functional layer is good, the roughness of the formed film is low, the performance of the device is optimized, and the method is very suitable for application of quantum dot light-emitting devices.
The invention also provides a display device comprising the light-emitting device.
According to the display device, the cavity functional material is prepared into the beta-MoO with uniform particle size and high work function by an aqueous solution method3The preparation process is simple, green and environment-friendly, the film forming uniformity of the hole functional layer is good, the roughness of the formed film is low, and the performance and the display effect of the device are optimized.
Drawings
FIG. 1 is a flow chart of the preparation steps of one embodiment of the present invention;
FIG. 2 is a schematic diagram of a device structure according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a device structure according to another embodiment of the present invention;
FIG. 4 is a photograph of a second solution prepared in example 1;
fig. 5 is an electron micrograph of the metal oxide prepared in example 1.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
All the starting materials, reagents and preparation apparatus used below were commercially available.
The invention provides a preparation method of a light-emitting device, which comprises the following steps:
providing an anode, and depositing a hole functional material, a quantum dot luminescent material and a cathode material in sequence to obtain a hole functional layer, a quantum dot luminescent layer and a cathode;
the hole functional material comprises a metal oxide, and the step of depositing the hole functional material further comprises a step of preparing the metal oxide by an aqueous solution method.
In one embodiment, the hole function layer is formed by solution processing, and the hole function layer includes at least one of a hole injection layer and a hole transport layer.
According to the preparation method of the light-emitting device, the hole functional material is prepared by the aqueous solution method, the preparation process is simple and environment-friendly, and the hole functional layer can be prepared by the solution method, so that the preparation method is very matched with the application of the solution method in preparing the light-emitting layer, and particularly matched with the application of a quantum dot light-emitting device.
In one embodiment, in order to optimize the device performance, the method further comprises the following steps: after the deposition of the luminescent material, the method further comprises the step of depositing an electron transport material and/or an electron injection material to obtain an electron transport layer and/or an electron injection layer.
In one embodiment the metal oxide comprises beta-MoO3Is prepared from beta-MoO with high work function by aqueous solution method3。β-MoO3The particle size of (A) is 5 to 10 nm. Due to beta-MoO in the prepared metal oxide3The particle size is small and uniform, the film forming uniformity can be improved, the film forming roughness is reduced, and the method is very suitable for being used as a hole functional layer in a QLED device.
In one embodiment, as shown in fig. 1, a method for preparing a metal oxide includes the steps of:
providing an aqueous solution containing molybdenum salt;
adding an acidic substance while stirring, and adjusting the pH value of the solution system to be not more than 6;
continuously stirring for at least 24 hours to obtain a first solution containing nano particles;
adding a strong oxidant while stirring to obtain a second solution containing metal oxide;
drying to obtain the product.
According to the preparation method, water is used as a solvent, the metal oxide is synthesized at a low temperature under the action of acidity and a strong oxidant, and the preparation process is simple, green and environment-friendly. In addition, the prepared metal oxide has small and uniform particle size, can improve the film forming uniformity, reduce the roughness of formed films and improve the performance of devices, and is very suitable for being used as a device functional layer, especially as a cavity functional layer in a QLED device.
The above steps are explained in detail below.
S100, providing an aqueous solution containing molybdenum salt;
the specific steps for providing an aqueous solution containing molybdenum salt include, but are not limited to: adding the raw material containing molybdenum salt into water, stirring and dissolving to obtain the molybdenum-containing water-soluble fertilizer. The water may be distilled or deionized water, preferably double distilled water.
In one embodiment, the aqueous solution comprising a molybdenum salt comprises an aqueous solution of a single molybdenum salt. In this embodiment, the molybdenum salt may include at least one of ammonium molybdate and ammonium molybdate hydrate. Among these, ammonium molybdate hydrate includes, but is not limited to, ammonium molybdate tetrahydrate.
Of course, the aqueous solution containing the molybdenum salt includes a mixed aqueous solution collectively containing the molybdenum salt and the transition metal salt. The molybdenum salt may include at least one of ammonium molybdate and ammonium molybdate hydrate. Among these, ammonium molybdate hydrate includes, but is not limited to, ammonium molybdate tetrahydrate. Transition metal salts include, but are not limited to, compounds or mixtures containing at least one of vanadium, nickel, and tungsten. The mass ratio of the molybdenum salt to the transition metal salt can be adjusted accordingly according to the properties.
In one embodiment, the concentration of the molybdenum salt in the aqueous solution containing the molybdenum salt is 0.005mol/L to 0.05 mol/L. In order to obtain a more uniform particle size distribution, the amount concentration of the molybdenum salt is preferably 0.008mol/L to 0.015mol/L, and more preferably 0.008mol/L to 0.012 mol/L.
S200, adding an acidic substance while stirring, and adjusting the pH value of a solution system to be not more than 6;
in one embodiment, the acidic substance is a strong or weak acid, preferably a strong acid. Specifically, the strong acid includes, but is not limited to, at least one of concentrated hydrochloric acid, nitric acid, and sulfuric acid.
In one embodiment, the pH value of the solution system is adjusted to 3-5, and the pH value of the solution is controlled to be in a proper range, so that the particle size and the particle size distribution of the prepared metal oxide can be adjusted to be in a proper range, and the particle size of the prepared material is prevented from being too large or too wide. Therefore, the roughness of the film surface after the film formation of the metal oxide can be reduced, the film formation uniformity of the metal oxide is improved, and the performance of a device structure containing the metal oxide is improved.
S300, continuously stirring for at least 24 hours to obtain a first solution containing the nano particles;
in the presence of acidUnder the action of sexual substance, with H+The dissolved molybdenum-containing ions can automatically aggregate into nano particles by continuous release and continuous stirring. The particle size of the nano particles is less than 20nm, and specifically can be about 5-10 nm. The stirring speed may be generally 50rpm to 500 rpm. The stirring temperature is low, and may be, for example, 15 to 35 ℃.
The stirring time can be 24-48 h, preferably 24-36 h.
S400, adding a strong oxidant while stirring to obtain a second solution containing metal oxide;
the strong oxidant includes but is not limited to hydrogen peroxide, and other types of strong oxidants can be used. The strong oxidizing agent may be added in an amount that is capable of oxidizing the surface of the nanoparticles in the first solution.
In a specific embodiment, the strong oxidant is a hydrogen peroxide solution with a concentration of 15 wt.% to 50 wt.%, preferably a hydrogen peroxide solution with a concentration of 20 wt.% to 40 wt.%. The volume ratio of the added hydrogen peroxide solution to the first solution is 1: 600-1: 1500, preferably 1: 800-1: 1300. By adopting the hydrogen peroxide solution with low content, the surface oxidation degree of the nano particles can be better controlled, and the beta-MoO with high work function can be obtained3。
With the addition of the strong oxidant, the molybdenum-containing nano particles can be quickly subjected to surface oxidation to form molybdenum oxide; molybdenum oxide is dispersed in the second solution. The second solution can be used for directly forming a film to prepare a film layer containing molybdenum oxide.
And S500, drying to obtain the product.
Excess water in the second solution is removed by rotary evaporation, vacuum drying or freeze drying to obtain a dried metal oxide product.
When the aqueous solution containing the molybdenum salt is a single molybdenum salt aqueous solution, the prepared metal oxide product is light yellow beta-MoO3And the beta-MoO3The particle size of (A) is 5-10 nm, and the particle size distribution is narrow.
As shown in fig. 2, the present invention also provides a light emitting device including an anode 100, a light emitting layer 300, and a cathode 500, which are stacked. The light emitting device further includes a hole function layer 200 disposed between the anode of the light emitting layer and the light emitting layer, and the material of the hole function layer 200 includes the metal oxide prepared by the above method. The hole function layer 200 may include at least one of a hole injection layer and a hole transport layer. In this embodiment, the hole function layer is a hole injection layer.
In one embodiment, the hole function layer is prepared from the metal oxide through a film forming process, and the thickness of the prepared hole function layer is 5-25 nm.
In another embodiment, the hole function layer is directly formed from the second solution, and the film thickness of the prepared hole function layer is 5-25 nm. The film formation is performed by the conventional technical means of the solution method, and specifically includes but is not limited to spin coating, printing, spraying, roll-to-roll printing and the like.
In this embodiment mode, the light emitting layer 300 includes a quantum dot light emitting layer. At this time, the light emitting device may be a quantum dot light emitting device. We find that the metal oxide prepared by the environment-friendly preparation method is used as a hole functional layer, can meet the performance requirements of quantum dot light-emitting devices, and has good application prospects.
Of course, in other embodiments, the metal oxide may be applied in other structures, such as OLEDs. The light-emitting layer may be a light-emitting layer otherwise common in the corresponding device field.
In an embodiment, the materials of the anode 100 and the cathode 500 may be adjusted accordingly according to the type of the light emitting device. Specifically, when the light emitting device is a flip-chip structure, the cathode is a transparent electrode, and the anode is a non-transparent electrode. When the light-emitting device is in a front-mounted structure, the anode is a transparent electrode, and the cathode is a non-transparent electrode. The non-transparent electrode prevents the light emitted by the quantum dot light-emitting layer from being transmitted out through the electrode layer, and the transparent electrode enables the light emitted by the quantum dot light-emitting layer to be transmitted out through the electrode layer. The transparent electrode material may be a transparent material commonly used in the art, such as an Indium Tin Oxide (ITO) material, a fluorine-doped tin oxide (FTO) material, graphene, a carbon nanotube film, and the like. The non-transparent electrode material may be a non-transparent material commonly used in the art, for example, the anode material may be selected from metal materials such as aluminum, silver, copper, gold, etc., and the cathode material may include metals and oxides thereof, specifically including but not limited to aluminum and silver.
In one embodiment, the anode 100 may be disposed on a substrate (not shown) which may be a material commonly used in the art, for example, a hard material or a flexible material, without limitation. The hard material may be glass. The flexible material can be aluminum foil or polymer film material, wherein the polymer film material can be PE film, PP film, PI film, PC film and other film materials.
In one embodiment, the material of the quantum dot light emitting layer may be selected from quantum dot materials commonly used in the art, including but not limited to ii-VI compounds and their core-shell structures, iii-v or IV-VI semiconductor nanocrystals and their core-shell structures, such as CdSe, CdS, CdTe, ZnSe, ZnS, InP, GaAs, GaP, or their combination. The quantum dots in the quantum dot light-emitting layer can be selected from at least one of red quantum dots, green quantum dots and blue quantum dots, and the quantity and the characteristics of the quantum dots can be correspondingly selected and adjusted according to the performance of the light-emitting device. In order to ensure the light emitting efficiency and the carrier transport efficiency of the quantum dot light emitting layer, the thickness of the quantum dot light emitting layer 200 may be selected from 5 to 300nm, and preferably 20 to 100 nm. Of course, as technology advances, this film thickness range may not be limited.
In order to improve the performance of the light emitting device, the light emitting device may further include at least one of an electron transport layer and an electron injection layer. In one embodiment, as shown in fig. 3, the hole function layer 200 includes a hole injection layer 210 and a hole transport layer 220, and the light emitting device includes an electron transport layer 400.
In one embodiment, the hole transport layer 220 is disposed between the hole injection layer 210 and the light emitting layer 300. The material of the hole transport layer 220 may be beta-MoO3The metal oxide of (a) may, of course, also be selected from hole transport materials commonly used in the art, including but not limited to TAPC, NPB, PVK, TFB, poly-TPD, and metal oxides, including but not limited to molybdenum oxide and nickel oxide. The thickness of the hole transport layer is selected from 5 to 300nm, preferably 20 to 100 nm. Of course, as technology advancesAnd may not be limited to this film thickness range.
In one embodiment, the electron transport layer 400 is disposed between the cathode 500 and the light emitting layer 300. The electron transport layer may be made of any electron transport material commonly used in the art, including but not limited to TiOxZnO, Bphen, Bepp2, TPBi. The thickness of the electron transport layer is selected from 5 to 300nm, preferably 20 to 100 nm. Of course, as technology advances, this film thickness range may not be limited.
In one embodiment, an electron injection layer (not shown) is disposed between the cathode and the light emitting layer. The electron injection layer may be made of an electron injection material commonly used in the art.
The steps for fabricating the above light emitting device will be described in detail below, taking a front-loading light emitting device as an example.
A method for manufacturing a light emitting device includes the steps of:
providing an anode;
depositing a hole functional layer on the anode;
depositing a light emitting layer on the hole function layer;
a cathode is deposited over the light-emitting layer.
The hole function layer may include at least one of a hole injection layer and a hole transport layer. In this embodiment, the hole function layer is a hole injection layer. Depositing a hole-functional layer comprising beta-MoO3The metal oxide of (1). In this embodiment, the hole function layer is further directly formed from a second solution containing a metal oxide, and the film thickness of the hole function layer may be 5 to 25 nm. The film formation is performed by the conventional technical means of the solution method, and specifically includes but is not limited to spin coating, printing, spraying, roll-to-roll printing and the like. The preparation steps of the metal oxide can be referred to above, and are not described in detail herein.
In one embodiment, before depositing the hole function layer, the anode may be subjected to a cleaning treatment, which may specifically include solvent ultrasonic treatment, ultraviolet ozone treatment, and the like, to remove impurities or organic matters on the surface of the cathode layer. The anode can be prepared by a method commonly used in the art, such as evaporation. The anode may be deposited on a substrate.
In one embodiment, after depositing the light emitting layer, at least depositing an electron transport layer and/or depositing an electron injection layer is further included.
The preparation methods of the anode, the hole function layer, the light emitting layer, the cathode, the electron transport layer and the electron injection layer can adopt common methods, and the respective materials and deposition thicknesses are as described above, and are not described herein again.
The present invention also provides a display apparatus including the above light emitting device. The display device comprises a display screen, a display and terminal equipment.
The present invention will be described in detail with reference to specific examples.
Example 1
Ammonium molybdate tetrahydrate is first dissolved in redistilled water at a concentration of 0.008M/L, hydrochloric acid is added, and the pH is adjusted to 4. Stirring was continued for 36 hours. Adding hydrogen peroxide with the concentration of 20 wt.% of 1/800 volume ratio under the condition of stirring, and carrying out surface oxidation to obtain a second solution; drying to obtain beta-MoO3。
The prepared product is beta-MoO by XRD characterization3. As can be seen from the photograph shown in FIG. 4, the second solution was prepared to contain pale yellow β -MoO3And (3) nanoparticles. From the electron micrograph shown in FIG. 5, it can be seen that the small particles, specifically as indicated by the arrows in the figure, produce β -MoO3The nano particles are very small, and the particle size is 5-10 nm through testing.
The steps of preparing the light emitting device: on a substrate containing an anode, the beta-MoO is added3The hole injection layer is prepared by coating and film forming, and then the hole transport layer, the quantum dot light emitting layer, the electron transport layer and the cathode are sequentially prepared by adopting a preparation method commonly used in the field.
Example 2
Firstly, ammonium molybdate is dissolved in secondary distilled water at the concentration of 0.015mol/L, nitric acid is added, and the pH value is adjusted to 5. Stirring was continued for 48 hours. Adding hydrogen peroxide with the concentration of 35 wt.% of 1/1200 volume ratio under the condition of stirring, and carrying out surface oxidation to obtain a second solution; drying to obtain beta-MoO3。
The steps of preparing the light emitting device: on a substrate containing an anode, the beta-MoO is added3The hole injection layer is prepared by coating and film forming, and then the hole transport layer, the quantum dot light emitting layer, the electron transport layer and the cathode are sequentially prepared by adopting a preparation method commonly used in the field.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A method for manufacturing a light emitting device, comprising the steps of:
providing an anode, and depositing a hole functional material, a luminescent material and a cathode material in sequence to obtain a hole functional layer, a luminescent layer and a cathode; wherein the hole functional material comprises a metal oxide;
the step of depositing the hole functional material further comprises a step of preparing the metal oxide by an aqueous solution method, wherein the step of preparing the metal oxide by the aqueous solution method is to synthesize the metal oxide at low temperature under the action of acidity and a strong oxidant by using water as a solvent.
2. The method of claim 1, wherein the metal oxide comprises beta-MoO3Said beta-MoO3The particle size of (A) is 5 to 10 nm.
3. The production method according to claim 1 or 2, wherein the step of producing a metal oxide comprises:
providing an aqueous solution containing molybdenum salt;
adding an acidic substance while stirring, and adjusting the pH value of the solution system to be not more than 6;
continuously stirring for at least 24 hours to obtain a first solution containing nano particles;
adding a strong oxidant while stirring to obtain a second solution containing metal oxide;
drying to obtain the product.
4. The method according to claim 3, wherein the molybdenum salt is present in the aqueous solution containing molybdenum salt in an amount of 0.005mol/L to 0.05mol/L, and the molybdenum salt comprises at least one of ammonium molybdate and ammonium molybdate hydrate.
5. The method according to claim 3, wherein the acidic substance is a strong acid, and the pH of the solution system is adjusted to 3 to 5.
6. The method of claim 3, wherein said strong oxidant comprises an aqueous hydrogen peroxide solution having a concentration of 15 wt.% to 50 wt.%.
7. The method according to claim 6, wherein the volume ratio of the aqueous hydrogen peroxide solution to the first solution is 1:600 to 1: 1500.
8. The method of any one of claims 1 to 4, further comprising the steps of: after the deposition of the luminescent material, the method further comprises the step of depositing an electron transport material and/or an electron injection material to obtain an electron transport layer and/or an electron injection layer.
9. A light-emitting device produced by the production method according to any one of claims 1 to 8.
10. A display device characterized by comprising the light-emitting device according to claim 9.
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| CN104167491A (en) * | 2014-07-02 | 2014-11-26 | 苏州大学 | Preparation method for metal oxide water-soluble film |
| CN107074662A (en) * | 2014-11-07 | 2017-08-18 | 攀时奥地利公司 | Metal-oxide film, the method for depositing metal oxide film and the device comprising metal-oxide film |
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| CN104167491A (en) * | 2014-07-02 | 2014-11-26 | 苏州大学 | Preparation method for metal oxide water-soluble film |
| CN107074662A (en) * | 2014-11-07 | 2017-08-18 | 攀时奥地利公司 | Metal-oxide film, the method for depositing metal oxide film and the device comprising metal-oxide film |
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| Electrodeposited α- and β-Phase MoO3 Films and Investigation of Their Gasochromic Properties;David Di Yao, et al;《Cryst. Growth Des.》;20120301;第1865-1870页 * |
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