CN110223942A - Wafer method for adhering film and film sticking device for wafers - Google Patents

Wafer method for adhering film and film sticking device for wafers Download PDF

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Publication number
CN110223942A
CN110223942A CN201910493023.3A CN201910493023A CN110223942A CN 110223942 A CN110223942 A CN 110223942A CN 201910493023 A CN201910493023 A CN 201910493023A CN 110223942 A CN110223942 A CN 110223942A
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China
Prior art keywords
diaphragm
wafer
placing
pressure
protective layer
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CN201910493023.3A
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Chinese (zh)
Inventor
陈鹏
周厚德
李明亮
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Yangtze Memory Technologies Co Ltd
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Yangtze Memory Technologies Co Ltd
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Priority to CN201910493023.3A priority Critical patent/CN110223942A/en
Publication of CN110223942A publication Critical patent/CN110223942A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67132Apparatus for placing on an insulating substrate, e.g. tape

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The embodiment of the invention discloses a kind of wafer method for adhering film and film sticking device for wafers, the wafer method for adhering film includes: the first surface covering diaphragm in wafer;Wherein, the lower surface of the diaphragm is contacted with the first surface;The gas between the diaphragm and the first surface is extracted using gas extraction arrangement, so that the first pressure between the first surface and the lower surface of the diaphragm, less than the second pressure of the upper surface of the diaphragm.

Description

Wafer method for adhering film and film sticking device for wafers
Technical field
The present embodiments relate to integrated circuit fields, in particular to a kind of wafer method for adhering film and film sticking device for wafers.
Background technique
It is essential process in semiconductor manufacturing process that wafer, which is thinned with wafer cutting, is not had from wafer usually There is being thinned or being cut on one side for circuit structure.Before wafer is thinned or cuts, need that there is circuit structure in wafer One mask protects the circuit structure.The prior art is when carrying out pad pasting, bubble easy to form, pad pasting between diaphragm and wafer Second-rate, diaphragm is poor to the support and protective effect of wafer.
Summary of the invention
In view of this, the embodiment of the present invention provides a kind of wafer method for adhering film and film sticking device for wafers.
The first aspect of the embodiment of the present invention provides a kind of wafer method for adhering film, comprising:
Diaphragm is covered in the first surface of wafer;Wherein, the lower surface of the diaphragm is contacted with the first surface;
The gas between the diaphragm and the first surface is extracted using gas extraction arrangement, so that the first surface The first pressure between the lower surface of the diaphragm, less than the second pressure of the upper surface of the diaphragm.
According to a kind of embodiment, the method also includes:
Protective layer is formed in the upper surface of the diaphragm;Wherein, the protective layer has the upper surface phase with the diaphragm To the third surface of setting, the third surface, which meets, presets flat condition.
According to a kind of embodiment, the upper surface in the diaphragm forms protective layer, comprising:
When first pressure is less than default pressure, protective layer is formed in the upper surface of the diaphragm;Wherein, described pre- If pressure is less than second pressure;
Or,
From at the time of starting to extract the gas between the diaphragm and the first surface, after preset duration, The upper surface of the diaphragm forms protective layer.
According to a kind of embodiment, the upper surface in the diaphragm forms protective layer, comprising:
In the upper surface spin coating protective layer material of the diaphragm;
Solidify the protective layer material, to form the protective layer.
According to a kind of embodiment, the method also includes:
The wafer is placed in apparatus for placing, the second surface of the wafer and the bottom of the apparatus for placing are connect Touching;Wherein, the second surface is the opposing face of the first surface;
The gas between the second surface and the bottom of the apparatus for placing is extracted using the gas extraction arrangement, with Make the wafer stabilizing in the bottom of the apparatus for placing.
According to a kind of embodiment, the first surface in wafer covers diaphragm, comprising:
By the membrane covered in the first surface, the first area of the lower surface of the diaphragm and the first surface Contact, the second area of the lower surface of the diaphragm are contacted with the side wall of the apparatus for placing;Wherein, the side of the apparatus for placing Bottom of the wall perpendicular to the apparatus for placing.
The second aspect of the embodiment of the present invention provides a kind of film sticking device for wafers, comprising:
Apparatus for placing, for placing wafer;Wherein, there is the first venthole on the apparatus for placing;
Film covering device covers diaphragm for the first surface in wafer;Wherein, the lower surface of the diaphragm and described first Surface contact;
Gas extraction arrangement is connected, for extracting the film with the first escape pipe being mounted in first venthole Gas between piece and the first surface, so that the first pressure between the first surface and the lower surface of the diaphragm, Less than the second pressure of the upper surface of the diaphragm.
According to a kind of embodiment, the film sticking device for wafers further include:
Plater, for forming protective layer in the upper surface of the diaphragm;Wherein, the protective layer has and the film The third surface that the upper surface of piece is oppositely arranged, the third surface, which meets, presets flat condition.
According to a kind of embodiment, the film sticking device for wafers further include:
Pressure detection means, for detecting first pressure;
The plater is connected with the pressure detection means, is used for when first pressure is less than default pressure, Protective layer is formed in the upper surface of the diaphragm;The default pressure is less than second pressure;
Or,
The film sticking device for wafers further include: time set is connected with the gas extraction arrangement, is used for from the gas From at the time of draw-out device starts to extract the gas between the diaphragm and the first surface, start timing;
The plater is connected with the time set, for presetting when the duration of time set record is equal to When duration, protective layer is formed in the upper surface of the diaphragm.
According to a kind of embodiment, the plater, including spin coating component and hardening element;The spin coating component is used for The upper surface spin coating protective layer material of the diaphragm;The hardening element is for solidifying the protective layer material, described in being formed Protective layer.
According to a kind of embodiment, there is the second venthole on the apparatus for placing;The gas extraction arrangement, and is mounted on The second escape pipe in second venthole is connected, and is also used to extract the second surface of wafer and the bottom of the apparatus for placing Between gas so that the wafer stabilizing is in the bottom of the apparatus for placing;Wherein, the second surface is first table The opposing face in face.
According to a kind of embodiment, when by the membrane covered in the first surface, the of the lower surface of the diaphragm One region is contacted with the first surface, and the second area of the lower surface of the diaphragm is contacted with the side wall of the apparatus for placing; Wherein, bottom of the side wall of the apparatus for placing perpendicular to the apparatus for placing.
The above-mentioned wafer method for adhering film and film sticking device for wafers provided through the embodiment of the present invention, by extracting diaphragm and crystalline substance Gas between round first surface, the air between the lower surface of diaphragm and the first surface of wafer are extracted, and reduce film The lower surface of piece and the first surface of wafer form the probability of bubble during being bonded, so that the first surface of diaphragm and wafer It fits closely, improves the quality of pad pasting, diaphragm is enabled to provide effective support and protection for wafer.
Detailed description of the invention
Fig. 1 is a kind of flow chart of wafer method for adhering film provided in an embodiment of the present invention;
Fig. 2 is the flow chart of another wafer method for adhering film provided in an embodiment of the present invention;
Fig. 3 is a kind of schematic diagram of film sticking device for wafers provided in an embodiment of the present invention;
Fig. 4 is the flow diagram of one of the relevant technologies wafer method for adhering film;
Fig. 5 is the schematic diagram of one of the relevant technologies wafer method for adhering film;
Fig. 6 is the schematic diagram of one of the relevant technologies wafer method for adhering film;
Fig. 7 is a kind of schematic diagram for rupturing wafer caused by wafer method for adhering film in the related technology;
Fig. 8 ruptures the schematic diagram of wafer for another kind caused by wafer method for adhering film in the related technology;
Fig. 9 is the schematic diagram that wafer pastes cutting film in the related technology;
Figure 10 is the schematic diagram of another rupture wafer caused by wafer method for adhering film in the related technology;
Figure 11 is a kind of schematic diagram for wafer method for adhering film that example of the present invention provides;
When Figure 12 is the wafer method for adhering film provided using example of the present invention, diaphragm is bonded with the protrusion on circuit structure surface Schematic diagram.
Specific embodiment
The technical solution of the present invention is further elaborated with reference to the accompanying drawings and specific embodiments of the specification.Although attached The illustrative embodiment of the disclosure is shown in figure, it being understood, however, that may be realized in various forms the disclosure without answering It is limited by the embodiments set forth herein.On the contrary, providing these embodiments is to be able to the more thorough explanation disclosure, And the scope of the present disclosure can be fully disclosed to those skilled in the art.
Referring to attached drawing, more specifically description is of the invention by way of example in the following passage.It is wanted according to following explanation and right Book is sought, advantages and features of the invention will become apparent from.It should be noted that attached drawing is all made of very simplified form and using non- Accurately ratio, only to convenient, lucidly aid illustration embodiment of the present invention purpose.Unless stated otherwise or refer to Out, otherwise the term " first " in the present invention, the descriptions such as " second " are only used for distinguishing various components in the present invention, element, step It is rapid etc., without being intended to indicate that various components, element, the logical relation between step or ordinal relation etc..
If directionality involved in the embodiment of the present invention indicates (such as up, down, left, right, before and after ...), directionality It indicates to be only used for explaining relative positional relationship, the motion conditions under a certain particular pose (all as shown in the picture) between each component Deng, if the particular pose changes, directionality instruction also change correspondingly accordingly.
In embodiments of the present invention, term " A is on/below B " means to contact with each other ground one comprising both A, B another Situation or A, B on/below one between the two also between be inserted with other component and one be non-contactly located at another one it The situation of up/down.
Fig. 1 is a kind of flow chart of wafer method for adhering film provided in an embodiment of the present invention.As shown in Figure 1, the wafer pad pasting Method the following steps are included:
Step S11: diaphragm is covered in the first surface of wafer;Wherein, the lower surface of diaphragm is contacted with first surface;
Step S12: the gas between diaphragm and first surface is extracted using gas extraction arrangement, so that first surface and film The first pressure between the lower surface of piece, less than the second pressure of the upper surface of diaphragm.
In embodiments of the present invention, the material of the diaphragm may include metal and nonmetallic.When the material of diaphragm is metal When, it may include aluminium.When the material of diaphragm is nonmetallic, it may include plastics, such as poly terephthalic acid class plastics (PET).
In embodiments of the present invention, the first surface of wafer can be the arbitrary surfaces of wafer.The arbitrary surfaces can include: full Foot presets the surface of flat condition and is unsatisfactory for presetting the surface of flat condition.For example, the first surface when wafer has circuit When structure, since Functional Design is it is required that when the first surface of wafer has raised or sunken, the first surface of wafer is not Satisfaction presets flat condition.When the first surface of wafer is the opposing face of the one side with circuit structure, the first surface is full Foot presets flat condition.Herein, flat condition is preset can include: the surface is horizontal plane;Or when wafer is horizontally arranged, the table Face with respect to the horizontal plane meet preset planeness condition.For example, the preset planeness condition includes first surface to horizontal plane Flatness tolerance range may include -5 μm to 5 μm.
The embodiment of the present invention reduces diaphragm by way of extracting the gas between diaphragm and the first surface of wafer The first pressure and gas content between lower surface and wafer first surface, between the lower surface of diaphragm and the first surface of wafer Air be extracted, the lower surface for reducing diaphragm forms the probability of bubble with the first surface of wafer during being bonded, and makes The first surface for obtaining diaphragm and wafer fits closely, and improves the quality of pad pasting, diaphragm is provided effectively for wafer Support and protection.
In some embodiments, when extracting the gas between diaphragm and first surface using gas extraction arrangement, film can be made Reach vacuum state between piece and the first surface of wafer.At this point, vacuum degree between diaphragm and the first surface of wafer takes It is worth range can include: -60 to -80KPa.
In some inventive embodiments, the wafer method for adhering film further include:
Wafer is placed in apparatus for placing, contacts the second surface of wafer with the bottom of apparatus for placing;Wherein, the second table Face is the opposing face of first surface;
The gas between second surface and the bottom of apparatus for placing is extracted using gas extraction arrangement, so that wafer stabilizing exists The bottom of apparatus for placing.
In embodiments of the present invention, when the first surface of wafer is the surface that wafer has circuit structure, the of wafer Two surfaces are the surface that wafer does not have circuit structure;When the first surface of wafer is the surface that wafer does not have circuit structure When, the second surface of wafer is the surface that wafer has circuit structure.
In embodiments of the present invention, before wafer is placed in apparatus for placing, first identifier on wafer can be obtained and put The relative positional relationship of the second identifier of bottom of device is set, and the position of relationship adjustment wafer depending on the relative position, so that position The first identifier of wafer in apparatus for placing is contacted with the second identifier of apparatus for placing bottom.Herein, the bottom of the apparatus for placing Portion can be for circle, square etc., and the bottom of the apparatus for placing and the wafer contacts are used to support the wafer.It is filled when placing When the bottom set is round, which can be located at the edge of wafer, which can be located at the edge of the bottom.Pass through The position of relationship adjustment wafer depending on the relative position, it is ensured that wafer is placed in the specific position of the apparatus for placing bottom, and the spy Positioning is set and can be covered by diaphragm, and then guarantees that the lower surface of diaphragm, which can cover wafer, to be had when carrying out wafer pad pasting The surface of circuit structure avoids askew causing the non-envelope in wafer first surface partial region in the first surface patch of wafer due to diaphragm The phenomenon that piece covers.
The embodiment of the present invention is before carrying out pad pasting, by extracting between the second surface of wafer and the bottom of apparatus for placing Gas, reduce the pressure between the second surface of wafer and the bottom of apparatus for placing so that the pressure be less than the first table of wafer First pressure in face.Under the action of pressure difference between the first surface of wafer and second surface, wafer stabilizing is filled placing The bottom set.
In some inventive embodiments, step S11 includes:
By membrane covered in first surface, the first area of the lower surface of diaphragm is contacted with first surface, the following table of diaphragm The second area in face is contacted with the side wall of apparatus for placing;Wherein, bottom of the side wall of apparatus for placing perpendicular to apparatus for placing.
In embodiments of the present invention, when the first surface by membrane covered in wafer, diaphragm and apparatus for placing constitute chamber Room, the second area of the side wall support diaphragm lower surface of apparatus for placing.
As shown in Fig. 2, in some inventive embodiments, the wafer method for adhering film further include:
Step S13: protective layer is formed in the upper surface of diaphragm;Wherein, protective layer has set opposite with the upper surface of diaphragm The third surface set, third surface, which meets, presets flat condition.
In embodiments of the present invention, this presets flat condition can include: third surface is horizontal plane;Or when wafer level is put When setting, the surface with respect to the horizontal plane meet preset planeness condition.For example, the preset planeness condition includes first surface Flatness tolerance range with respect to the horizontal plane may include -5 μm to 5 μm.
When carrying out reduction processing to wafer, it usually needs in wafer there is the surface of circuit structure to cover diaphragm, then will Wafer covers chaffy side and is fixed on station, to wafer do not have circuit structure surface carry out it is thinned.
When wafer have circuit structure surface be unsatisfactory for it is above-mentioned preset flat condition when, such as due to circuit structure design Needs, make the surface with circuit structure of wafer there are it is raised or sunken equal whens, there is the surface of circuit structure in wafer After fitting closely between diaphragm, diaphragm can have the morphogenesis on the surface of circuit structure corresponding protrusion or recessed based on wafer It falls into, so that wafer covers chaffy side and is unsatisfactory for presetting flat condition.When the wafer is thinned or is cut, it will cover Stablize when on station the side of chaffy wafer.Since the side that wafer is contacted with station is unsatisfactory for presetting flat item Part, therefore there are gaps between station and wafer, so that station is poor for the stablizing effect of wafer, are not having to wafer When having the side of circuit structure to be operated, wafer is easy to happen shaking, reduces the accuracy of reduction process, reduces production matter Amount.In addition, since the side that wafer is contacted with station is unsatisfactory for presetting flat condition, wafer stress is not when carrying out thinned Uniformly, it is easy to cause wafer to rupture, reduces yields and production efficiency.
The wafer method for adhering film provided through the embodiment of the present invention, to chaffy wafer is covered, in the upper surface of diaphragm It is further formed protective layer, the third surface of the protective layer, which meets, presets flat condition.When the third surface is connect with station When touching, the gap between aforesaid operations platform and wafer can be reduced, improve station to the stability of wafer, improve reduction process or The accuracy and the quality of production of cutting technique.Also, the protective layer can have the side of circuit structure to play well for wafer Supporting role so that when being thinned or being cut, wafer uniform force reduces the generation of wafer rupture, improves yields With production efficiency.
In some inventive embodiments, step S13 includes:
When the first pressure is less than default pressure, protective layer is formed in the upper surface of diaphragm;Wherein, pressure is preset less than the Two pressure.
In embodiments of the present invention, by extracting the gas in the chamber that diaphragm and apparatus for placing are formed, the following table of diaphragm Gas between face and the first surface of wafer is extracted, and the of the lower surface of pressure size and diaphragm in the chamber and wafer The size of the first pressure between one surface is identical.Extract the chamber in gas during, can to first pressure into Row detection.When the first pressure is less than default pressure, diaphragm is fitted closely with wafer formation.After diaphragm is bonded with wafer, The upper surface of diaphragm forms the protective layer, makes to meet by the surface of pad pasting treated wafer and presets flat condition.
In some inventive embodiments, step S13 includes:
From at the time of starting to extract the gas between diaphragm and first surface, after preset duration, in the upper of diaphragm Surface forms protective layer.
In embodiments of the present invention, the following table of diaphragm can be judged by duration that detection gas draw-out device is extracted Whether face completes between the first surface of wafer is bonded.When extraction diaphragm and wafer first surface since gas extraction arrangement Between gas at the time of from, after have passed through scheduled duration, it is believed that between the lower surface of diaphragm and the first surface of wafer First pressure is less than the second pressure of diaphragm upper surface, and diaphragm is fitted closely with wafer formation.
In some inventive embodiments, step S13 includes:
In the upper surface spin coating protective layer material of diaphragm;
Curing protective coat material, to form protective layer.
In embodiments of the present invention, the method for curing protective coat material can include: the crystalline substance of heating spin coating matcoveredn material Circle, wafer of cooling spin coating matcoveredn material etc..
In embodiments of the present invention, during spin coating protective layer material, being dissolved in protective layer material in solvent can be with As solvent is flowed in the upper surface of diaphragm, so that protective layer material is easy to insert in corresponding recess.In addition, in centrifugal force Under the action of, the third surface of protective layer meets the probability increase for presetting flat condition, so that having protective layer that can mention for wafer For better stabilization.
Since protective layer with wafer not there is the one side of circuit structure directly to contact, the choosing of protective layer material is expanded Range is selected, the cost control of wafer film coating process is conducive to.For example, the protective layer material may include resin.
Fig. 3 is that the embodiment of the present invention provides a kind of structural schematic diagram of film sticking device for wafers.As shown in figure 3, the wafer pastes Film device 100 includes:
Apparatus for placing 101, for placing wafer;Wherein, there is the first venthole on apparatus for placing 101,
Film covering device 102 covers diaphragm for the first surface in wafer;Wherein, the lower surface of diaphragm and first surface Contact;
Gas extraction arrangement 103 is connected with the first escape pipe being mounted in the first venthole, for extracting diaphragm and Gas between one surface, so that the first pressure between first surface and the lower surface of diaphragm, less than the upper surface of diaphragm Second pressure.
In some inventive embodiments, there is the second venthole on apparatus for placing;
Gas extraction arrangement 103 is connected with the second escape pipe being mounted in the second venthole, is also used to extract wafer Gas between second surface and the bottom of apparatus for placing 101, so that wafer stabilizing is in the bottom of apparatus for placing 101;Wherein, Two surfaces are the opposing face of first surface.
In embodiments of the present invention, the first venthole can be located at the side wall of apparatus for placing.When by membrane covered in wafer When first surface, the first area of the lower surface of diaphragm is contacted with the first surface of wafer, the second area of the lower surface of diaphragm It is contacted with the side wall of apparatus for placing;Wherein, bottom of the side wall of apparatus for placing perpendicular to apparatus for placing.
In some inventive embodiments, film sticking device for wafers 100 further include:
Plater, for forming protective layer in the upper surface of diaphragm;Wherein, protective layer has the upper surface phase with diaphragm To the third surface of setting, third surface, which meets, presets flat condition.
In some inventive embodiments, film sticking device for wafers 100 further include:
Pressure detection means, for detecting the first pressure;
Plater is connected with pressure detection means, is used for when the first pressure is less than default pressure, in the upper table of diaphragm Face forms protective layer;Wherein, it presets pressure and is less than second pressure.
In embodiments of the present invention, pressure monitoring device can for apparatus for placing side wall on, and be located at the chamber in, pressure Monitoring device may be alternatively located in the inner wall of the first escape pipe.
In some inventive embodiments, film sticking device for wafers 100 further include:
Time set is connected with gas extraction arrangement 103, for extracting diaphragm and the since gas extraction arrangement 103 From at the time of gas between one surface, start timing;
Plater is connected with time set, when the duration for recording when time set is equal to preset duration, in diaphragm Upper surface formed protective layer.
In some inventive embodiments, plater includes spin coating component and hardening element;Spin coating component is used in diaphragm Upper surface spin coating protective layer material;Hardening element is used for curing protective coat material, to form protective layer.
Example 1
It is can be processed on wafer and is fabricated to various circuit structures, wafer is usually had to the one side of circuit structure, that is, is completed The one side of chip functions is known as front, and the one side that wafer does not have circuit structure is known as the back side.In wafer fabrication processes, lead to Often will the back side to wafer carry out it is thinned.It, can be in the one tunic piece of positive face paste of wafer, for protecting wafer just before wafer is thinned The circuit structure in face.
Fig. 4 shows a kind of schematic diagram of relevant wafer method for adhering film, which includes:
Wafer is taken out from wafer cassette;
Wafer is fixed in laminator;
By membrane covered above wafer, diaphragm is rolled with idler wheel;
Diaphragm is cut along the edge of wafer, removes extra diaphragm.
In the related technology, mechanical pressure is mainly applied in the upper surface of diaphragm by idler wheel, so that diaphragm is bonded with wafer Together.Fig. 5 shows the schematic diagram that pad pasting is carried out using idler wheel.Since there is wafer the surface of circuit structure there is protrusion, And the size of idler wheel itself is larger, when carrying out pad pasting in such a way that idler wheel applies mechanical pressure, on the one hand when idler wheel rolls crystalline substance When round raised position, the damage of wafer is easily caused, which will cause the rupture of wafer.On the other hand, since idler wheel exists Abrasion can be generated in use process, so that the shape of idler wheel changes, cannot be filled between idler wheel and diaphragm in the rolling process Tap touching improves the probability of generation bubble during pad pasting, so that being bonded tightness reduction between diaphragm and wafer, reduces Support and protective effect of the diaphragm for wafer, improves fragment rate.Also, after forming bubble between wafer and grinding, It needs to remove on the diaphragm pasted, and re-starts pad pasting, not only waste raw material but also reduce the efficiency of pad pasting.
As shown in fig. 6, when carrying out the mode pad pasting of idler wheel rolling to the wafer with step structure, diaphragm and Step-edge Junction Structure cannot form direct contact, so that diaphragm is poor to the support and protective effect of step part.Therefore, to backside of wafer into When row is thinned or cuts, wafer discontinuity increases the probability of wafer rupture.Fig. 7 and Fig. 8 shows idler wheel rolling patch The picture of the rupture of wafer caused by film, the wire in Fig. 7 and Fig. 8 is for identifying the position ruptured.
Fig. 9 is shown for the wafer after being thinned, in the schematic diagram of backside of wafer patch cutting film.At this point, being rolled using idler wheel The mode of pressure carries out pad pasting.It is greatly decreased before being relatively thinned due to the wafer thickness after being thinned, the side rolled by idler wheel When formula pastes cutting film to backside of wafer, wafer is bent by the pressure of idler wheel.Since the diaphragm of wafer frontside is for step Protective effect at structure is poor, wafer unbalance stress, and the probability for causing wafer rupture as shown in Figure 10 occur increases.
Figure 11 shows a kind of schematic diagram of wafer method for adhering film of this example offer, mainly comprises the steps that
It is acted on, the second surface of wafer is fixed on the workbench of fixed device by vacuum suction;
In the one tunic piece of first surface horizontal laying of wafer;
The gas in the chamber that diaphragm and apparatus for placing are constituted is extracted, the first surface of diaphragm and wafer is fitted closely.
In this example, the thickness of the diaphragm is smaller meets preset condition with the suppleness for guaranteeing diaphragm, can be with wafer First surface fit closely.For example, the thickness range of the diaphragm can include: 10 μm to 20 μm etc..The material of the diaphragm can wrap Include metal film, antistatic non-metallic film etc..In the present example, the lower surface of diaphragm is contacted with the first surface of wafer, film The pressure of the upper surface of piece is equal to standard atmospheric pressure.
In the present example, it if the first surface satisfaction of wafer presets flat condition, after completing pad pasting, is fitted in The upper surface of diaphragm on the first surface of wafer, which also meets, presets flat condition.If the first surface of wafer is unsatisfactory for presetting Flat condition, such as first surface have salient point or recess, in extracting the gas process in the chamber, in the upper surface of diaphragm Under the action of the pressure difference of lower surface, diaphragm will be shunk at corresponding raised or sunken place, be formed closely with raised or sunken Fitting.Figure 12 is the schematic diagram that diaphragm is bonded with the protrusion on circuit structure surface.
The wafer method for adhering film provided by this example, without using idler wheel and film contact, by contact film coating process Improvement is contactless film coating process, eliminates wafer damage and bending that Mechanical Contact power may cause, is particularly suitable for surpassing The pad pasting of thin wafer.In addition, this example carries out pad pasting by the gas extracted in the chamber, it can should while extracting gas Foreign matter extraction in chamber, reduces the probability that foreign matter causes damage to crystal column surface.
When the first surface of wafer is unsatisfactory for presetting flat condition, such as first surface has step structure, passes through this The wafer method for adhering film that example provides, be conducive to diaphragm and the first surface of wafer formed it is good be bonded and supports, improve Protective effect of the diaphragm for wafer reduces the probability that wafer ruptures, and is conducive to the transport for carrying out wafer.
Also, the diaphragm that this example uses may not include glue-line, therefore its rigidity is better than on the one hand can be improved containing glue film To the stabilization of wafer in wafer thinning process, guarantee the thinned uniformity of wafer, reduce total thickness deviation (TTV, Total thickness variety), improve the thinned quality of wafer;On the other hand, it is pasted compared to using containing glue film Film, the thickness of this example used chaff, which is less than, contains glue film, advantageously reduces production cost.
In several embodiments provided herein, it should be understood that disclosed device and method can pass through it Its mode is realized.Apparatus embodiments described above are merely indicative, for example, the division of the unit, only A kind of logical function partition, there may be another division manner in actual implementation, such as: multiple units or components can combine, or It is desirably integrated into another system, or some features can be ignored or not executed.In addition, shown or discussed each composition portion Mutual coupling or direct-coupling or communication connection is divided to can be through some interfaces, the INDIRECT COUPLING of equipment or unit Or communication connection, it can be electrical, mechanical or other forms.
Above-mentioned unit as illustrated by the separation member, which can be or may not be, to be physically separated, aobvious as unit The component shown can be or may not be physical unit, it can and it is in one place, it may be distributed over multiple network lists In member;Some or all of units can be selected to achieve the purpose of the solution of this embodiment according to the actual needs.
In addition, each functional unit in various embodiments of the present invention can be fully integrated into a processing module, it can also To be each unit individually as a unit, can also be integrated in one unit with two or more units;It is above-mentioned Integrated unit both can take the form of hardware realization, can also realize in the form of hardware adds SFU software functional unit.This Field those of ordinary skill, which is understood that, realizes that all or part of the steps of above method embodiment can be by program instruction phase The hardware of pass is completed, and program above-mentioned can be stored in a computer readable storage medium, which when being executed, holds Row step including the steps of the foregoing method embodiments;And storage medium above-mentioned include: movable storage device, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), magnetic or disk etc. it is various It can store the medium of program code.
Disclosed method in several embodiments of the method provided herein, in the absence of conflict can be any group It closes, obtains new embodiment of the method.
Disclosed feature in several product embodiments provided herein, in the absence of conflict can be any group It closes, obtains new product embodiments.
Disclosed feature in several methods provided herein or apparatus embodiments, in the absence of conflict can be with Any combination obtains new embodiment of the method or apparatus embodiments.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any Those familiar with the art in the technical scope disclosed by the present invention, can easily think of the change or the replacement, and should all contain Lid is within protection scope of the present invention.Therefore, protection scope of the present invention should be based on the protection scope of the described claims.

Claims (12)

1. a kind of wafer method for adhering film characterized by comprising
Diaphragm is covered in the first surface of wafer;Wherein, the lower surface of the diaphragm is contacted with the first surface;
The gas between the diaphragm and the first surface is extracted using gas extraction arrangement, so that the first surface and institute The first pressure between the lower surface of diaphragm is stated, less than the second pressure of the upper surface of the diaphragm.
2. wafer method for adhering film according to claim 1, which is characterized in that the method also includes:
Protective layer is formed in the upper surface of the diaphragm;Wherein, the protective layer has set opposite with the upper surface of the diaphragm The third surface set, the third surface, which meets, presets flat condition.
3. wafer method for adhering film according to claim 2, which is characterized in that the upper surface in the diaphragm, which is formed, to be protected Sheath, comprising:
When first pressure is less than default pressure, protective layer is formed in the upper surface of the diaphragm;Wherein, the default pressure It is less than second pressure by force;
Or,
From at the time of starting to extract the gas between the diaphragm and the first surface, after preset duration, described The upper surface of diaphragm forms protective layer.
4. wafer method for adhering film according to claim 2, which is characterized in that the upper surface in the diaphragm, which is formed, to be protected Sheath, comprising:
In the upper surface spin coating protective layer material of the diaphragm;
Solidify the protective layer material, to form the protective layer.
5. wafer method for adhering film according to claim 1, which is characterized in that the method also includes:
The wafer is placed in apparatus for placing, the second surface of the wafer and the bottom of the apparatus for placing are contacted;Its In, the second surface is the opposing face of the first surface;
The gas between the second surface and the bottom of the apparatus for placing is extracted using the gas extraction arrangement, so that institute Wafer stabilizing is stated in the bottom of the apparatus for placing.
6. wafer method for adhering film according to claim 5, which is characterized in that the first surface cover film in wafer Piece, comprising:
By the membrane covered in the first surface, the first area of the lower surface of the diaphragm connects with the first surface Touching, the second area of the lower surface of the diaphragm are contacted with the side wall of the apparatus for placing;Wherein, the side wall of the apparatus for placing Perpendicular to the bottom of the apparatus for placing.
7. a kind of film sticking device for wafers characterized by comprising
Apparatus for placing, for placing wafer;Wherein, there is the first venthole on the apparatus for placing;
Film covering device covers diaphragm for the first surface in wafer;Wherein, the lower surface of the diaphragm and the first surface Contact;
Gas extraction arrangement is connected with the first escape pipe being mounted in first venthole, for extract the diaphragm and Gas between the first surface, so that the first pressure between the first surface and the lower surface of the diaphragm, is less than Second pressure of the upper surface of the diaphragm.
8. film sticking device for wafers according to claim 7, which is characterized in that the film sticking device for wafers further include:
Plater, for forming protective layer in the upper surface of the diaphragm;Wherein, the protective layer has and the diaphragm The third surface that upper surface is oppositely arranged, the third surface, which meets, presets flat condition.
9. film sticking device for wafers according to claim 8, which is characterized in that
The film sticking device for wafers further include:
Pressure detection means, for detecting first pressure;
The plater is connected with the pressure detection means, is used for when first pressure is less than default pressure, in institute The upper surface for stating diaphragm forms protective layer;The default pressure is less than second pressure;
Or,
The film sticking device for wafers further include: time set is connected with the gas extraction arrangement, is used for from the gas extraction From at the time of device starts to extract the gas between the diaphragm and the first surface, start timing;
The plater is connected with the time set, for being equal to preset duration when the duration of time set record When, protective layer is formed in the upper surface of the diaphragm.
10. film sticking device for wafers according to claim 8, which is characterized in that
The plater, including spin coating component and hardening element;The spin coating component is used for the upper surface in the diaphragm and revolves Stopping off material;The hardening element is for solidifying the protective layer material, to form the protective layer.
11. film sticking device for wafers according to claim 7, which is characterized in that
There is the second venthole on the apparatus for placing;
The gas extraction arrangement is connected with the second escape pipe being mounted in second venthole, is also used to extract wafer Second surface and the apparatus for placing bottom between gas so that the wafer stabilizing is at the bottom of the apparatus for placing Portion;Wherein, the second surface is the opposing face of the first surface.
12. film sticking device for wafers according to claim 11, which is characterized in that
When by the membrane covered in the first surface, the first area of the lower surface of the diaphragm and the first surface Contact, the second area of the lower surface of the diaphragm are contacted with the side wall of the apparatus for placing;Wherein, the side of the apparatus for placing Bottom of the wall perpendicular to the apparatus for placing.
CN201910493023.3A 2019-06-06 2019-06-06 Wafer method for adhering film and film sticking device for wafers Pending CN110223942A (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101689513A (en) * 2007-02-09 2010-03-31 Lg伊诺特有限公司 Multifunctional die attachment film and semiconductor packaging method using the same
CN204391053U (en) * 2014-11-10 2015-06-10 宸圆科技股份有限公司 Flexible vacuum alignment and lamination equipment
TW201901783A (en) * 2017-05-18 2019-01-01 凱爾 H. 普瑞渥瑟 A protective sheet used in processing wafers, a disposal system for wafers, and a combination of wafers and protective sheets

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101689513A (en) * 2007-02-09 2010-03-31 Lg伊诺特有限公司 Multifunctional die attachment film and semiconductor packaging method using the same
CN204391053U (en) * 2014-11-10 2015-06-10 宸圆科技股份有限公司 Flexible vacuum alignment and lamination equipment
TW201901783A (en) * 2017-05-18 2019-01-01 凱爾 H. 普瑞渥瑟 A protective sheet used in processing wafers, a disposal system for wafers, and a combination of wafers and protective sheets

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