CN110221522A - The screening technique of wetting solvents - Google Patents
The screening technique of wetting solvents Download PDFInfo
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- CN110221522A CN110221522A CN201910462320.1A CN201910462320A CN110221522A CN 110221522 A CN110221522 A CN 110221522A CN 201910462320 A CN201910462320 A CN 201910462320A CN 110221522 A CN110221522 A CN 110221522A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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Abstract
The present invention provides a kind of screening technique of wetting solvents.Method includes choosing m kind solvent to be coated m group wafer；It is coated with the first photoresist that n kind presets dosage on the wetting layer of n wafer, photoresist layer is formed, to form painting film；It is screened according to screening conditions to film is applied, and filters out the painting film set for meeting screening conditions；It is screened according to the default dosage of the first photoresist to film set is applied, the least film that applies of default dosage to filter out the first photoresist is as the painting film chosen, for being coated with the solvent for the painting film chosen as the wetting solvents suitable for the first photoresist chosen.The present invention effectively improves the photoresist coating situation of crystal column surface, improves the photoresist layer thickness uniformity for applying film by filtering out the wetting solvents for being coated wetting to wafer before being coated with photoresist.
Description
The application is entitled " photoresist coating process, wetting solvents screening technique and wetting solvents ", in 2018
Filed on March 2, in, application No. is the divisional applications of the Chinese patent application of " 201810173987.5 ".
Technical field
The present invention relates to the photoresist coatings in integrated circuit yellow light process, and in particular to a kind of screening side of wetting solvents
Method.
Background technique
With the raising of the quality requirements to integrated circuit, in the photoresist painting for the yellow light process that wafer is 8 cun or more
The uniformity for the photoresist layer thickness for maintaining photoresist to be formed in cloth and the usage amount for reducing photoresist in coating process seem outstanding
It is important.Under normal conditions, it needs when being coated with photoresist using a large amount of photoresists, and photoresist coating uniformity is poor, in turn
Influence the quality of integrated circuit.
Summary of the invention
The present invention provides a kind of screening technique of wetting solvents, at least to solve the above technical problem in the prior art.
In order to achieve the above objectives, the present invention provides a kind of coating process of photoresist, comprising:
Wafer to be coated is provided；
Wetting solvents are titrated in the surface to be coated of the wafer, and wetting solvents described in spin coating are prewetted to form wetting
Layer；And
The wetting layer surface spin coating photoresist to form photoresist layer；
Wherein, the contact angle of wetting solvents titration is formed in the surface to be coated liquid pearl and the surface to be coated is less than
90°；Dispersion parameters are between 17.8~19MPa in the Hansen Solubility Parameter of the wetting solvents1/2, polarity parameters between 4.1~
16.7MPa1/2, hydrogen bonding parameter is between 5.1~7.4MPa1/2。`
As an embodiment, the maximum thickness and minimum value of the photoresist layer and the photoresist layer average thickness
Absolute value of the difference be respectively less than the 5% of the photoresist layer average thickness.
As an embodiment, the master that the rotation speed of wetting solvents described in spin coating is greater than photoresist described in spin coating turns
Speed.
As an embodiment, it is remained in the step of surface spin coating photoresist of the wetting layer is to form photoresist layer
The remaining photoresist in the wetting layer surface is not less than the 30%~50% of the photoresist titer.
As an embodiment, the wafer includes 8 cun and 8 cun or more of wafer；
Before the surface to be coated of the wafer titrates the wetting solvents further include:
Hexamethyldisilazane is coated in the crystal column surface.
As an embodiment, the wetting solvents include cyclohexanone and/or cyclohexanone derivative.
In order to achieve the above objectives, the present invention provides a kind of screening techniques of wetting solvents, comprising:
It chooses m kind solvent to be coated m group wafer, and one group of wafer is coated with by a kind of solvent, to form wetting layer；
The first photoresist is respectively coated to form photoresist layer on the wetting layer of the n wafers, wherein described
The default dosage of the first photoresist is n kind, a kind of the first described photoresist of default dosage is coated on each wafer,
Film is applied to form n kind；
The painting film is screened according to screening conditions, establishes and applies film set；And
The painting film set is screened, the least gluing of default dosage of the first photoresist is filtered out
Piece, solvent used by the least painting film of the default dosage of the first photoresist, which is used as, is suitable for the first described photoresist
The wetting solvents of agent, wherein m and n is the integer more than or equal to 2.
As an embodiment, solubility of the m kind solvent in the first described photoresist is molten greater than presetting
Xie Du.
As an embodiment, judge the m kind solvent in the first described photoresist according to Hansen Solubility Parameter
Solubility in agent.
As an embodiment, the first photoresist described in spin coating on the wetting layer of the wafer, with shape
At the step of photoresist layer include: with the rotation speeds of 300~1000 rev/min rotate the wafer with described in spin coating the first
Photoresist rotates the wafer with the main revolving speed of 800~2500 rev/min of setting and removes described in the crystal round fringes
The first photoresist.
As an embodiment, the rotation speed of the solvent of selection described in spin coating is greater than the first photoresist described in spin coating
The main revolving speed of agent.
As an embodiment, described the step of being screened according to screening conditions to the painting film, includes:
Multiple test points are chosen on the photoresist layer for applying film；
The height of each test point is measured, to calculate the average height of the photoresist layer；And
The position of each test point is measured by film thickness detector, photoresist layer stereo-picture is formed, to detect the photoresist
The film thickness uniformity of layer, to filter out the average height within the scope of preset height and the film thickness uniformity is default uniform
The painting film in range is spent as the painting film set.
As an embodiment, described the step of being screened according to screening conditions to the painting film, includes:
The photoresist layer surface for applying film is observed using microsurgical instrument, it is lossless to filter out the photoresist layer surface
Bad painting film is as the painting film set.
As an embodiment, it before the step of m kind solvent is coated the m group wafer, also wraps
Include the screening m kind solvent:
All solvents to be screened are titrated on the wafer, to form liquid pearl on the wafer；
Measure the angle of the contact angle between the liquid pearl and the wafer of all solvents to be screened；
The m kind solvent is screened according to the angle of the contact angle, wherein the liquid pearl of each in the m kind solvent
Angle with the contact angle of the wafer is less than 90 degree.
As an embodiment, screening technique further include:
Select second of photoresist in k kind photoresist, the third photoresist ..., kth kind photoresist, to each light
Resist is all made of the screening technique and filters out be applicable in wetting solvents, to form wetting solvents set；
The wetting solvents of k kind photoresist are filtered out while are suitable for from the wetting solvents set.
In order to achieve the above objectives, the solvent conduct including cyclohexanone and/or cyclohexanone derivative that the present invention provides a kind of
The purposes of wetting is coated to wafer before being coated with photoresist.
As an embodiment, the solvent including cyclohexanone and/or cyclohexanone derivative is suitable for ArF dry type
Preceding wetting is coated to the wafer in photoetching process and ArF immersion lithography process；
Wherein, the ArF case of dry lithographic processes is the method for carrying out dry lithography using argon fluoride excimer laser, described
ArF immersion lithography process is the method for carrying out liquid immersion lithography using argon fluoride excimer laser.
In order to achieve the above objectives, the present invention provides a kind of wetting solvents, as before being coated with photoresist to wafer into
The purposes of row coating wetting, liquid pearl that wetting solvents titration is formed in the wafer surface to be coated and the wafer surface to be coated
Contact angle is less than 90 °；Dispersion parameters are between 17.8~19MPa in the Hansen Solubility Parameter of the wetting solvents1/2, polarity ginseng
Number is between 4.1~16.7MPa1/2, hydrogen bonding parameter is between 5.1~7.4MPa1/2。
As an embodiment, when the surface to be coated titration wetting solvents in the wafer, and moisten described in spin coating
Wet solvent is prewetted to form wetting layer；And the photoresist described in the surface spin coating of the wetting layer to be to form photoresist layer,
It is flat that the maximum thickness and minimum value of the photoresist layer and the absolute value of the difference of the photoresist layer average thickness are respectively less than photoresist layer
The 5% of equal thickness.
As an embodiment, the wetting solvents include cyclohexanone and/or cyclohexanone derivative.
The present invention will be by that will include that the solvent of cyclohexanone and/or cyclohexanone derivative is used as before being coated with photoresist to crystalline substance
Circle is coated the wetting solvents of wetting, effectively improves the photoresist coating situation of crystal column surface, improves and apply film
Photoresist layer thickness uniformity, while under the premise of applying the average thickness of photoresist layer of film and thickness uniformity meets the requirements,
Photoresist dosage is reduced, cost is reduced.
Above-mentioned general introduction is merely to illustrate that the purpose of book, it is not intended to be limited in any way.Except foregoing description
Schematical aspect, except embodiment and feature, by reference to attached drawing and the following detailed description, the present invention is further
Aspect, embodiment and feature, which will be, to be readily apparent that.
Detailed description of the invention
In the accompanying drawings, unless specified otherwise herein, otherwise indicate the same or similar through the identical appended drawing reference of multiple attached drawings
Component or element.What these attached drawings were not necessarily to scale.It should be understood that these attached drawings depict only according to the present invention
Disclosed some embodiments, and should not serve to limit the scope of the present invention.
Fig. 1 is the flow chart of the coating process of photoresist in the embodiment of the present invention；
Fig. 2 is the contact angle schematic diagram of liquid pearl and wafer when titrating wetting solvents in the embodiment of the present invention；
Fig. 3 is the screening technique of the solvent in the embodiment of the present invention for being soaked before being coated with photoresist to wafer
Flow chart.
Appended drawing reference:
110 wetting solvents liquid pearls,
120 wafers,
θ contact angle.
Specific embodiment
Hereinafter, certain exemplary embodiments are simply just described.As one skilled in the art will recognize that
Like that, without departing from the spirit or scope of the present invention, described embodiment can be modified by various different modes.
Therefore, attached drawing and description are considered essentially illustrative rather than restrictive.
Embodiment one
The present embodiment provides a kind of making technologies of photoresist coating, as shown in Figure 1, the technique includes:
Step S11: wafer to be coated is provided；
Step S12: wetting solvents are titrated in the surface to be coated of the wafer, and wetting solvents described in spin coating are prewetted with shape
At wetting layer；
Step S13: the wetting layer surface spin coating photoresist to form photoresist layer.
Wherein, as shown in connection with fig. 2, the wetting solvents that the wetting solvents titration is formed in the surface to be coated of the wafer 120
The contact angle of the surface to be coated of liquid pearl 110 and wafer 120 is θ, measures the contact angle θ, the wetting solvents titration it is described to
The contact angle of the surface to be coated of wetting solvents liquid pearl 110 and the wafer 120 that coating surface is formed is less than 90 °, i.e. θ < 90 °；The profit
Dispersion parameters are between 17.8~19MPa in the Hansen Solubility Parameter of wet solvent1/2, polarity parameters are between 4.1~16.7MPa1/2,
Hydrogen bonding parameter is between 5.1~7.4MPa1/2；The photoresist layer maximum thickness and minimum value and the photoresist layer average thickness
Absolute value of the difference is respectively less than the 5% of photoresist layer average thickness.
The applicable range of the making technology of the present embodiment photoresist coating includes in the yellow light process that wafer is 8 cun or more
Photoresist coating process, but being not limited to wafer is the photoresist coating process in 8 cun or more of yellow light process.
Wherein, the wetting solvents include cyclohexanone and/or cyclohexanone derivative is preferred wetting solvents, but are not limited to
In the solvent for including cyclohexanone and/or cyclohexanone derivative.
In one example, in the surface spin coating photoresist of the wetting layer to form photoresist layer the following steps are included:
The photoresist is titrated on the surface of the wetting layer；
The wafer is rotated with photoresist described in spin coating；
Reflow treatment is carried out to the photoresist on the wafer；
The wafer is rotated to set main revolving speed and removes the photoresist of the crystal round fringes；
Clean the wafer one side opposite with surface to be coated；
The wafer is rotated, so that the photoresist of the wafer is dry, forms the photoresist layer.
Through the above steps, photoresist layer can be formed.
It is as follows in the requirement of each step of making technology of above-mentioned photoresist coating:
Rotate the wafer with described in spin coating the step of photoresist in, the rotation speed of the wafer is 300~1000 turns/
Per minute；The main revolving speed is 800~2500 rev/min, and wetting solvents described in spin coating are prewetted to form wetting layer
The rotation speed of spin coating wetting solvents is greater than the main revolving speed of spin coating photoresist in step, and photoresist layer thickness is formed and revolving speed when coating
It is associated.
It rotates the wafer and is remained in photoresist described in spin coating, and when spin coating photoresist on the wafer and soak layer surface
Photoresist be not less than the photoresist titer 30%~50%.
In one example, the photoresist includes acrylic resin.
The wafer includes 8 cun and 8 cun or more wafers, and the wafer is in the front surface coating six for titrating the wetting solvents
Methyl disilazane (HMDS) to increase the hydrophobicity of crystal column surface, and then enhances the adhesion of photoresist and crystal column surface.
The wetting solvents titration that the making technology of the photoresist coating of the present embodiment uses is formed in the surface to be coated
Liquid pearl and the surface to be coated contact angle less than 90 °, then the wetting solvents have an effect of wet wafer, while choosing
Dispersion parameters are 17.8~19MPa in the Hansen Solubility Parameter of the wetting solvents1/2, polarity parameters are 4.1~16.7MPa1 /2, hydrogen bonding parameter is 5.1~7.4MPa1/2(including boundary value) meets the wetting solvents of above-mentioned Hansen Solubility Parameter for more
Kind photoresist all has good solubility, and the wafer after prewetting carries out photoresist coating, and a variety of photoresists can be obtained
Meet production requirement, while photoresist to preferable photoresist coating state so that photoresist layer has higher uniformity
Dosage is smaller.Meanwhile the maximum thickness and minimum value and the absolute value of the difference of the photoresist layer average thickness of photoresist layer are small
In the 5% of photoresist layer average thickness, i.e. the thickness uniformity of photoresist layer is higher.
Embodiment two
Present embodiments provide a kind of screening of wetting solvents for being coated wetting to wafer before being coated with photoresist
Method, as shown in flow chart in Fig. 3, comprising:
Step S21: it chooses m kind solvent and m group wafer is coated, and one group of wafer is coated with by a kind of solvent, with shape
At the wetting layer of wafer, wherein every group of wafer includes n wafer, and m and n are the positive integer more than or equal to 2；
Step S22: coating n kind presets the first photoresist of dosage on the wetting layer of the n wafers, is formed
The photoresist layer of wafer, to form painting film, wherein in every group of wafer, using a kind of the first photoresist of default dosage to one
A wafer is coated, and applies film to form n kind；
Step S23: the painting film is screened according to screening conditions, and filters out the painting film for meeting screening conditions
Set；
Step S24: screening the painting film set according to the default dosage of the first photoresist, with screening
The least film that applies of the default dosage of the first photoresist is as the painting film chosen out, for being coated with the painting film of the selection
Solvent as the wetting solvents for being suitable for the first photoresist chosen.
The wetting solvents that the screening technique of the present embodiment filters out not only apply film and meet screening requirement, but also photoresist
Default dosage it is minimum, i.e., guarantee apply film under the premise of preset range, the default dosage of photoresist is minimum.By selection
Wetting solvents as the solvent for being coated wetting to wafer before being coated with photoresist, be allowed to when rear photoresist is coated with
Wetting solvents are uniformly mixed in contact surface, improve the uniformity of photoresist coating, and then improve the photoresist of photoresist formation
The uniformity of thickness degree reduces photoresist dosage, reduces cost in guarantee photoresist layer under the premise of meeting uniformity requirements.
It is described to apply what film was screened to described according to screening conditions in order to filter out satisfactory painting film
Step includes:
Multiple test points are chosen on the photoresist layer for applying film；
The height of each test point is measured, to calculate the average height of photoresist layer；And
The position of each test point is measured by film thickness detector, photoresist layer stereo-picture is formed, to detect photoresist layer
Film thickness uniformity, to filter out the average height within the scope of preset height and the film thickness uniformity is in default uniformity model
Painting film in enclosing is as the painting film set.
Described the step of being screened according to screening conditions to the painting film includes:
The photoresist layer surface for applying film is observed, using microsurgical instrument to filter out out the lossless bad painting film of photoresist layer surface
As the painting film set.
Screening conditions do not require nothing more than the photoresist layer surface of gluing piece without breakage, and apply the photoresist layer of film average film thickness and
The film thickness uniformity of photoresist layer will also meet preset reference range.The wetting solvents filtered out in this way not only apply the photoresist of film
Layer average thickness reaches in thickness preset range, and the uniformity of the thickness of photoresist layer reaches in uniformity preset range, together
When photoresist default dosage it is minimum.Under the premise of the average thickness and thickness uniformity for guaranteeing photoresist layer meet the requirements, subtract
Few photoresist dosage, reduces cost.
In one example, m kind solvent is coated m group wafer in the step s 21, and is coated with one group by a kind of solvent
Wafer, to form wetting layer, it is identical that every kind of solvent, which is coated with the solvent usage of a wafer,.
In one example, m kind solvent is coated m group wafer in the step s 21, and is coated with one group by a kind of solvent
Wafer was formed in the step of wetting layer, and the coating environment that every kind of solvent is coated with the wafer is identical with coating method；
Coating n kind presets the first photoresist of dosage on the wetting layer of the n wafers in step S22,
It is identical with coating method with coating environment that in the step of forming photoresist layer, the first photoresist is coated.
In a specific example, select 5 kinds of solvents to be measured: A solvent, B solvent, C solvent, D solvent, E solvent, by 5 kinds to
It surveys solvent five groups of wafers are coated to form wetting layer, wherein A solvent is coated with first group of wafer, and B solvent is coated with second group of crystalline substance
Circle, C solvent are coated with third group wafer, and D solvent is coated with the 4th group of wafer, and E solvent is coated with the 5th group of wafer, and every group of wafer includes 6
A wafer.
The wetting layer of first group of 6 wafers uses 0.90ml, 0.80ml, 0.70ml, 0.65ml, 0.60ml, 0.55ml
Photoresist correspond coating form photoresist layer, second group of wafer all uses aforesaid way to be coated with to form light to the 5th group of wafer
Resistance layer, to form painting film.
Measure the average thickness and photoresist layer of the photoresist layer of each painting film of 30 painting films of five groups of wafers formation
The uniformity of thickness；The method of measurement can be to be measured using film thickness detection system.
The uniformity of the photoresist layer of each painting film of 30 painting films of five groups of wafers formation is estimated, range estimation includes using
Enlarging instrument observation applies the photoresist layer surface appearance of film to obtain the uniformity of photoresist layer.
Every group of measurement result is arranged according to the default dosage descending of photoresist, it is specific as shown in table 1 below；Wherein, table 1
In " √ " indicate the average thickness and photoresist layer of the uniformity of range estimation photoresist layer and the photoresist layer of film thickness detection system measurement
The uniformity of thickness passes through, and " ◎ " indicates the average thickness and photoresist for the photoresist layer that range estimation is measured by film thickness detection system
The uniformity of the thickness of layer does not pass through , " ╳ " it indicates to estimate the average thickness and photoresist with the photoresist layer of film thickness detection system measurement
The uniformity of the thickness of layer does not pass through.
Table 1
It is screened according to table 1, screening conditions are as follows: the default dosage for reaching the photoresist coating of " √ " is fewer, solvent
Dissolubility it is better, the fewer the default dosage for when " √ " is same, reaching the photoresist coating of " ◎ " the better；
According to above-mentioned screening conditions, it is best to select D solvent solubility, thus as before being coated with photoresist to wafer into
The wetting solvents of row coating wetting.
The present embodiment by using D solvent as the wetting solvents for being coated wetting to wafer before being coated with photoresist,
It is allowed to uniformly mix with wetting solvents in contact surface when rear photoresist is coated, improves the uniformity of photoresist coating, into
And improve the uniformity of the photoresist layer thickness of the painting film of photoresist formation.
In one example, according to above-mentioned screening technique, second of photoresist in k kind photoresist, the third light are selected
Resist ..., kth kind photoresist are all made of any screening technique in above-mentioned example to each photoresist and filter out institute
Applicable wetting solvents, to form wetting solvents set；
The wetting solvents of k kind photoresist are filtered out while are suitable for from the wetting solvents set；
It selects k kind photoresist coating n kind on the wetting layer of the n wafers to preset dosage, forms photoresist layer, with
Formed apply film, and according to screening conditions to apply film screen, choose wetting solvents to form wetting solvents database, with
Filter out the wetting solvents suitable for a variety of photoresists；Wherein, may be using the wetting solvents that photoresist not of the same race filters out
It is same, it is also possible to be not of the same race, after forming wetting solvents database, to be moistened with being applicable in quantity and mostly being chosen with two standards of effect
Wet solvent.
The measurement for applying the average film thickness of the photoresist layer of film and the uniformity of thickness includes being measured using film thickness detection system,
Its specific steps includes: to choose several test points on the photoresist layer for applying film, measures each test using film thickness detection system
The height of point, the average height by calculating all test points obtain the average thickness for applying the photoresist layer of film, and pass through by
Each test point carries out three-dimensional imaging and obtains the thickness uniformity for applying the photoresist layer of film, thus by comparing each painting film
Photoresist layer measurement average thickness and film thickness uniformity, screen the solubility of solvent, wherein uniform with average thickness and thickness
Good property is with best solubility solvent.
In the case where all solvent types to be screened are more, in order to shorten screening time, can exist in the step s 21
M kind solvent is coated m group wafer, and a kind of solvent is only coated with the step of one group of wafer forms wetting layer and carries out before tentatively
Screening, i.e., can with the following steps are included:
All solvents to be screened are titrated on the wafer, every kind of solvent forms the liquid of the solvent on wafer
Pearl；
Measure the angle of the contact angle between the liquid pearl and the wafer of all solvents to be screened；
The solvent is screened according to solvent liquid pearl and the angle of the contact angle of the wafer, filters out solvent liquid pearl
It is less than the solvent of predetermined angle with the angle of the contact angle of the wafer；Wherein, the predetermined angle is less than 90 degree, such as preset angle
Degree can choose 45 degree.
When the angle of the contact angle is equal to 0 °, then the solvent complete wetting wafer；When the angle of the contact angle is small
When 90 °, then the wet with solvent or partially wetted wafer；When the angle of the contact angle is greater than 90 °, then the solvent is nonwetting
Wafer.Therefore first screening sends as an envoy to the wet solvent of wafer to carry out subsequent screening, can reduce and screen range, save screening when
Between.
In order to shorten screening time, m group wafer can be coated in m kind solvent, and a kind of solvent is only coated with one group
Wafer formed wetting layer the step of before carry out preliminary screening, i.e., can with the following steps are included:
Solubility of all solvents to be screened in photoresist is judged according to Hansen (Hansen) solubility parameter, is screened
The solubility of solvent dissolution photoresist is greater than the solvent of default solubility out, wherein solvent to be screened includes photoresist solvent
And/or organic solvent similar with photoresist solvent composition, solvent to be screened it is identical as photoresist solvent or have it is similar at
Point, guarantee that other elements will not be adulterated in photoresist coating, to guarantee photoetching development quality.
The method that solubility of all solvents to be screened in photoresist is judged according to Hansen Solubility Parameter is light
Resist and its melt base and be placed on D, P, H is in the space of three-dimensional coordinate, with the phase interaction of the photoresist centered on photoresist
The radius used draws ball as radius, wherein D represents dispersion parameters, and P represents polarity parameters, and H represents hydrogen bonding parameter, and R represents mutual
The radius of phase separation.If the position of solvent is located in ball, which can be dissolved in this solvent.The degree of dissolution can
With with ratio (RED) come quantitative description, it is clear that RED≤1, it is solvable；RED is smaller, and solubility is higher.It is right as theoretical basis
All solvents to be screened carry out preliminary screening, can reduce screening range, save the time of screening.
Embodiment three
Present embodiments provide a kind of solvent including cyclohexanone and/or cyclohexanone derivative be used as coating photoresist it
The preceding purposes that wetting is coated to wafer.
The present embodiment will be by that will include the solvent of cyclohexanone and/or cyclohexanone derivative as right before being coated with photoresist
Wafer is coated the wetting solvents of wetting, is allowed to uniformly mix with wetting solvents in contact surface when rear photoresist is coated,
The uniformity of photoresist coating is improved, and then improves the uniformity of the photoresist layer thickness of photoresist formation.
It is used as about the solvent for including cyclohexanone and/or cyclohexanone derivative and wafer is applied before being coated with photoresist
The range that the purposes of cloth wetting can be applicable in includes suitable for ArF case of dry lithographic processes and ArF immersion lithography process to the crystalline substance
Circle is coated preceding wetting；Wherein, the ArF case of dry lithographic processes is using argon fluoride (argon fluoride of wavelength 193nm) quasi-molecule
The method that laser carries out dry lithography, the ArF immersion lithography process are to carry out immersion light using argon fluoride excimer laser
The method at quarter.
In one example, the photoresist includes acrylic resin.
In one example, the wafer includes 8 cun and 8 cun or more wafers, and the crystal column surface is coated with two silicon nitrogen of hexamethyl
Alkane, coating hexamethyldisilazane are used to increase the hydrophobicity of crystal column surface.
By the present invention in that use the solvent including cyclohexanone and/or cyclohexanone derivative as wetting solvents, especially for
The ArF class photoresist applied, if acrylic resin is a kind of ArF class photoresist, hence it is evident that improve photoresist and be coated with to be formed
The uniformity of the thickness of photoresist layer, while reducing photoresist dosage.
Example IV
A kind of wetting solvents are present embodiments provided, as the use for being coated wetting to wafer before being coated with photoresist
On the way, as shown in Fig. 2, wetting solvents liquid pearl 110 and the wafer of the wetting solvents titration in the surface to be coated formation of wafer 120
The contact angle of 120 surface to be coated is less than 90 °, and wherein contact angle is indicated with θ；Color in the Hansen Solubility Parameter of the wetting solvents
Parameter is dissipated between 17.8~19MPa1/2, polarity parameters are between 4.1~16.7MPa1/2, hydrogen bonding parameter is between 5.1~7.4MPa1/2,
The wetting solvents for meeting above-mentioned Hansen Solubility Parameter all have good solubility for a variety of photoresists, the crystalline substance after prewetting
Circle carries out photoresist coating, can obtain preferable photoresist for a variety of photoresists and be coated with state, so that photoresist layer has
Standby higher uniformity, meets production requirement, while photoresist dosage is smaller.
In one example, when the surface to be coated titration wetting solvents in wafer, and spin coating wetting solvents are prewetted to be formed
Wetting layer；And in the surface spin coating photoresist of the wetting layer to form photoresist layer, the maximum thickness of the photoresist layer and
Minimum value and the absolute value of the difference of the photoresist layer average thickness are respectively less than the 5% of photoresist layer average thickness.
In one example, the wetting solvents include cyclohexanone and/or cyclohexanone derivative.
It include cyclohexanone and/or cyclohexanone derivative in wetting solvents of the present invention, especially for the ArF class light applied
Resist forms the maximum thickness and minimum value and the light of the photoresist layer if acrylic resin is a kind of ArF class photoresist
The absolute value of the difference of resistance layer average thickness is respectively less than the 5% of photoresist layer average thickness, hence it is evident that improves photoresist and is coated with the light to be formed
The uniformity of the thickness of resistance layer, while reducing photoresist dosage.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside", " up time
The orientation or positional relationship of the instructions such as needle ", " counterclockwise ", " axial direction ", " radial direction ", " circumferential direction " be orientation based on the figure or
Positional relationship is merely for convenience of description of the present invention and simplification of the description, rather than the device or element of indication or suggestion meaning must
There must be specific orientation, be constructed and operated in a specific orientation, therefore be not considered as limiting the invention.
In addition, term " first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include one or more of the features.In the description of the present invention, the meaning of " plurality " is two or more,
Unless otherwise specifically defined.
In the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " fixation " etc.
Term shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integral；It can be mechanical connect
It connects, is also possible to be electrically connected, can also be communication；It can be directly connected, can also indirectly connected through an intermediary, it can be with
It is the interaction relationship of the connection or two elements inside two elements.For the ordinary skill in the art, may be used
To understand the concrete meaning of above-mentioned term in the present invention as the case may be.
In the present invention unless specifically defined or limited otherwise, fisrt feature second feature "upper" or "lower"
It may include that the first and second features directly contact, also may include that the first and second features are not direct contacts but pass through it
Between other characterisation contact.Moreover, fisrt feature second feature " on ", " side " and " above " include fisrt feature
Right above second feature and oblique upper, or first feature horizontal height is merely representative of higher than second feature.Fisrt feature is
Two features " under ", " lower section " and " following " include fisrt feature right above second feature and oblique upper, or be merely representative of
One characteristic level height is less than second feature.
Above disclosure provides many different embodiments or example is used to realize different structure of the invention.In order to
Simplify disclosure of the invention, above the component of specific examples and setting are described.Certainly, they are merely examples, and
And it is not intended to limit the present invention.In addition, the present invention can in different examples repeat reference numerals and/or reference letter,
This repetition is for purposes of simplicity and clarity, itself not indicate between discussed various embodiments and/or setting
Relationship.In addition, the present invention provides various specific techniques and material example, but those of ordinary skill in the art can be with
Recognize the application of other techniques and/or the use of other materials.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, can readily occur in its various change or replacement,
These should be covered by the protection scope of the present invention.Therefore, protection scope of the present invention should be with the guarantor of the claim
It protects subject to range.
Claims (10)
1. a kind of screening technique of wetting solvents characterized by comprising
It chooses m kind solvent to be coated m group wafer, and one group of wafer is coated with by a kind of solvent, to form the wafer
Wetting layer, every group of wafer include n wafer；
The first photoresist is respectively coated to form photoresist layer on the wetting layer of the n wafers, wherein described first
The default dosage of kind photoresist is n kind, a kind of the first described photoresist of default dosage is coated on each wafer, with shape
Film is applied at n kind；
The painting film is screened according to screening conditions, establishes and applies film set；And
The painting film set is screened, the least painting film of default dosage of the first photoresist, institute are filtered out
Solvent used by the least painting film of default dosage of the first photoresist is stated as suitable for the first photoresist
Wetting solvents, wherein m and n is the integer more than or equal to 2.
2. screening technique according to claim 1, which is characterized in that the m kind solvent is in the first described photoresist
Solubility be greater than default solubility.
3. screening technique according to claim 2, which is characterized in that judge that the m kind is molten according to Hansen Solubility Parameter
Solubility of the agent in the first described photoresist.
4. screening technique according to claim 1, which is characterized in that the step of being coated to wafer, forming wetting layer
Include:
In the solvent that the surface to be coated titration of the wafer is chosen, and the solvent of selection described in spin coating is prewetted, to form wetting
Layer.
5. screening technique according to claim 4, which is characterized in that on the wetting layer of the wafer described in spin coating
The first photoresist, to form photoresist layer the step of include: to rotate the crystalline substance with the rotation speed of 300~1000 rev/min
Circle is rotated the wafer with the main revolving speed of 800~2500 rev/min of setting and is removed with the first photoresist described in spin coating
The first described photoresist of the crystal round fringes.
6. screening technique according to claim 5, which is characterized in that the rotation speed of the solvent of selection described in spin coating is greater than
The main revolving speed of the first photoresist described in spin coating.
7. screening technique according to claim 1, which is characterized in that described to be carried out according to screening conditions to the painting film
The step of screening includes:
Multiple test points are chosen on the photoresist layer for applying film；
The height of each test point is measured, to calculate the average height of the photoresist layer；And
The position of each test point is measured by film thickness detector, photoresist layer stereo-picture is formed, to detect the photoresist layer
Film thickness uniformity, to filter out the average height within the scope of preset height and the film thickness uniformity is in default uniformity model
Painting film in enclosing is as the painting film set.
8. screening technique according to claim 1, which is characterized in that described to be carried out according to screening conditions to the painting film
The step of screening includes:
The photoresist layer surface for applying film is observed using microsurgical instrument, it is lossless bad to filter out the photoresist layer surface
Film is applied as the painting film set.
9. screening technique according to claim 1, which is characterized in that applied in the m kind solvent to the m group wafer
Further include screening the m kind solvent before the step of cloth:
All solvents to be screened are titrated on the wafer, to form liquid pearl on the wafer；
Measure the angle of the contact angle between the liquid pearl and the wafer of all solvents to be screened；
The m kind solvent is screened according to the angle of the contact angle, wherein the liquid pearl of each and institute in the m kind solvent
The angle of the contact angle of wafer is stated less than 90 degree.
10. screening technique according to any one of claims 1 to 9, which is characterized in that further include: in selection k kind photoresist
Second of photoresist, the third photoresist ..., kth kind photoresist are all made of the screening technique to each photoresist and screen
Be applicable in wetting solvents out, to form wetting solvents set；
The wetting solvents of k kind photoresist are filtered out while are suitable for from the wetting solvents set.
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| CN201910462320.1A CN110221522B (en) | 2018-03-02 | 2018-03-02 | Method for screening wetting solvent |
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| CN201810173987.5A CN108345176A (en) | 2018-03-02 | 2018-03-02 | Photoresist coating process, wetting solvents screening technique and wetting solvents |
| CN201910462320.1A CN110221522B (en) | 2018-03-02 | 2018-03-02 | Method for screening wetting solvent |
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| CN110941143B (en) * | 2018-09-21 | 2023-11-17 | 长鑫存储技术有限公司 | Photoresist spin coating device and photoresist spin coating method |
Citations (4)
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|---|---|---|---|---|
| EP2397232A1 (en) * | 2010-06-18 | 2011-12-21 | Tokyo Electron Limited | Coating method and coating apparatus |
| CN104969129A (en) * | 2013-02-08 | 2015-10-07 | 东进世美肯株式会社 | Thinner composition and use thereof |
| CN105093828A (en) * | 2014-05-09 | 2015-11-25 | 太阳油墨制造株式会社 | Curable resin composition, dry film and printed circuit board |
| CN108345176A (en) * | 2018-03-02 | 2018-07-31 | 睿力集成电路有限公司 | Photoresist coating process, wetting solvents screening technique and wetting solvents |
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| AU2002227106A1 (en) * | 2001-11-15 | 2003-06-10 | Honeywell International Inc. | Spin-on anti-reflective coatings for photolithography |
| CN100459057C (en) * | 2006-05-22 | 2009-02-04 | 中芯国际集成电路制造(上海)有限公司 | Cleaning method of crystal column surface |
| JP6240404B2 (en) * | 2013-05-09 | 2017-11-29 | アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ | Rinsing liquid for lithography and pattern forming method using the same |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2397232A1 (en) * | 2010-06-18 | 2011-12-21 | Tokyo Electron Limited | Coating method and coating apparatus |
| CN104969129A (en) * | 2013-02-08 | 2015-10-07 | 东进世美肯株式会社 | Thinner composition and use thereof |
| CN105093828A (en) * | 2014-05-09 | 2015-11-25 | 太阳油墨制造株式会社 | Curable resin composition, dry film and printed circuit board |
| CN108345176A (en) * | 2018-03-02 | 2018-07-31 | 睿力集成电路有限公司 | Photoresist coating process, wetting solvents screening technique and wetting solvents |
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