CN110221455A - Microwave photon bandpass filtering chip based on silicon waveguide stimulated Brillouin scattering effect - Google Patents
Microwave photon bandpass filtering chip based on silicon waveguide stimulated Brillouin scattering effect Download PDFInfo
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- CN110221455A CN110221455A CN201910402824.4A CN201910402824A CN110221455A CN 110221455 A CN110221455 A CN 110221455A CN 201910402824 A CN201910402824 A CN 201910402824A CN 110221455 A CN110221455 A CN 110221455A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/0009—Materials therefor
- G02F1/0063—Optical properties, e.g. absorption, reflection or birefringence
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/0009—Materials therefor
- G02F1/009—Thermal properties
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0102—Constructional details, not otherwise provided for in this subclass
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0147—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on thermo-optic effects
Abstract
A kind of microwave photon bandpass filtering chip based on silicon waveguide stimulated Brillouin scattering effect, including phase-modulator, wavelength division multiplexer, brillouin gain generate silicon waveguide, bandstop filter and germanium silicon photodetector.The microwave signal of input is loaded on phase-modulator, generates the sideband of two phase phase difference 180 degrees.Later, pump light and modulated signal light are combined into all the way by wavelength division multiplexer, light beam after multiplex has the preceding silicon waveguide to stimulated Brillouin scattering effect by one section, after pumping light power increases to threshold value, gain is generated in the range of upper side band differs a Brillouin shift with pump light, and narrowband microwave signal is finally generated by germanium silicon photodetector.The bandpass filtering of microwave signal can be achieved in the present invention, has many advantages, such as that size is small, integrated level is high, low in energy consumption, passband is narrow, filter center frequency is flexibly adjustable, can play key effect in microwave photon signal processing system, have broad application prospects.
Description
Technical field
The invention belongs to microwave photon field, especially a kind of microwave light based on silicon waveguide stimulated Brillouin scattering effect
Subband pass filter chip.
Background technique
Microwave technology and photon technology are combined by microwave photon technology research, break through traditional microwave technology bandwidth it is low,
The bottleneck problems such as reconstitution difference.The technology mainly studies the interaction between microwave and light wave, comes including the use of optical means
Generate, transmit and handle microwave signal etc., the appearance of this technology brings new vitality to traditional microwave technical field.
In microwave photon technology field, every field related with photon technology and traditional microwave technology is all microwave photon technology
Research direction, at present the principal concern in the field be microwave photon transmission link, microwave photon signal generate and processing and
Integrated micro photonic device.
Microwave filter can to microwave signal carry out separation and Extraction, be basic component indispensable in microwave system it
One.Currently, having urgent demand to big bandwidth, multiband, restructural high performance microwave filter.However, traditional
In electrical domain, due to the constraint of electronic bottleneck, above-mentioned requirements are difficult to realize, largely limit the development of microwave system.Cause
This, for this problem, researcher proposes the filter based on microwave photon technology.
Compared to traditional microwave technology, photon technology has with roomy, the loss many advantages such as low, anti-interference, in conjunction with
The microwave photon filter of microwave technology and photon technology has the advantages such as big bandwidth, multiband, restructural, in microwave optical fiber
Be widely used prospect in Transmission system, optical phased array radar.However, current most of microwave photon filter
All it is made of discrete device, so that current microwave photon filter exists, structure is complicated, bulky, stability is low,
The problems such as performance is not up to standard.Therefore, integrated micro photon filter becomes the research emphasis of researcher.
The explosive growth of mobile communication will seek development the radio-frequency technique with high spectrum efficiency.In frequency agility system
In, radio-frequency filter frequency tuning range usually requires to cover several GHz even tens GHz, also needs to keep high at the same time
Spectral resolution (MHz precision) and highly selective to reduce interchannel crosstalk.Integrated micro light based on frequency of light wave mapping
Subfilter can easily realize the tuning of GHz frequency using photon wide spectral characteristics, however, this kind of microwave photon filter
Usually there is limited resolution ratio (GHz) and there are the containing between key parameter, such as cannot achieve frequency tuning range and
Optimize while between resolution ratio, therefore is unable to satisfy the demand of High-precision Microwave photon front end signal processing.
In recent years, more and more researchers, which are begun to focus on, is applied to microwave photon for stimulated Brillouin scattering effect
In filter.Stimulated Brillouin scattering has the advantages that low nonlinearity threshold value and narrow bandwidth, and gain bandwidth is in 10-100MHz model
In enclosing, the filter based on the principle then has hundred MHz resolution ratio below.Therefore, it is efficiently excited in cloth in micro-nano waveguide
Deep pool scattering provides a kind of splendid technological approaches for High-precision Microwave photonic signal processing.Further, if cloth will be excited
In deep scattering gain generate the device monolithics such as waveguide and modulator, wavelength division multiplexer, detector or hybrid integrated realizes microwave light
Subfilter will have many advantages, such as that small in size, light-weight, low in energy consumption, stability is high, performance is good, therefore have high application
Value.
Summary of the invention
For the deficiency of existing microwave photon filter, in conjunction in micro-nano sized waveguide stimulated Brillouin scattering effect it is excellent
Gesture, the present invention provide a kind of microwave photon bandpass filtering chip based on silicon waveguide stimulated Brillouin scattering effect, chip tool
Have the advantages that size is small, integrated level is high, low in energy consumption, stability is good, passband is narrow, filter center frequency is flexibly adjustable, mobile logical
Letter, military field all have very high application value.
To achieve the goals above, technical solution of the invention is as follows:
A kind of microwave photon bandpass filtering chip based on silicon waveguide stimulated Brillouin scattering effect, it is characterized in that, it should
Chip includes phase-modulator, wavelength division multiplexer, brillouin gain generation silicon waveguide, bandstop filter and germanium silicon photodetection
Device, the phase-modulator have light input end and microwave signal input terminal, the output end of the phase-modulator and described
The detection light input end of wavelength division multiplexer is connected, and the wavelength division multiplexer has detection light input end and pumping light input end,
The output end of the wavelength division multiplexer is connected with the input terminal that the brillouin gain generates silicon waveguide, which generates
The output end of silicon waveguide is connected with the input terminal of the bandstop filter, the output end of the bandstop filter and the germanium silicon
The input terminal of photodetector is connected, and the output end of the germanium silicon photodetector is the output end of the chip；
The microwave signal of input is loaded on the phase-modulator and is modulated to input light, the wavelength-division multiplex
Pump light and modulated signal light are combined into all the way by device, and the light beam after multiplex has preceding to stimulated Brillouin scattering by one section
The silicon waveguide of effect generates microwave signal output eventually by the germanium silicon photodetector conversion.
The phase-modulator is made of on piece phase-modulator, which is imitated using the plasma dispersion of silicon waveguide
It answers, by adjusting the alive size of silicon waveguide two sides metal electrode institute after adulterating, thus it is possible to vary effective refraction of silicon waveguide
Rate makes modulated signal light generate the side of two phase phase difference 180 degrees to realize the adjusting to optical signal phase in waveguide
Band.
The wavelength division multiplexer is made of add drop multiplex type micro-ring resonator, wherein pump light and modulated signal light
It inputs from upstream ends and input terminal, and using the plasma dispersion effect or thermo-optic effect of silicon waveguide, is adulterated by adjusting respectively
The alive size of silicon waveguide two sides metal electrode institute afterwards, changes the effective refractive index of waveguide, to adjust the resonance of micro-loop
Wavelength realizes the merging transmission of signal light after pump light and modulation.
It includes one section of silicon waveguide with before to stimulated Brillouin scattering effect that the brillouin gain, which generates silicon waveguide,
When pumping light power is smaller, no brillouin gain is generated；It is imitated when pumping light power reaches stimulated Brillouin scattering in silicon waveguide
After the threshold value answered, brillouin gain is generated, and one Brillouin shift of frequency phase-difference of the frequency of the gain and pump light.
The bandstop filter includes a micro-loop notch filter being made of through-type micro-ring resonator, utilizes silicon
The plasma dispersion effect or thermo-optic effect of waveguide are alive big by adjusting the silicon waveguide two sides metal electrode institute after adulterating
It is small, change the effective refractive index of waveguide, the adjusting of micro-ring resonant wavelength may be implemented, so that the pump light in waveguide be declined completely
It cuts, so that only input light carrier and the lower sideband by phase-modulator generation enters germanium silicon photodetector.
The germanium silicon photodetector includes an on piece germanium silicon photodetector, for realizing optical signal to electric signal
Conversion, final output microwave signal.
Compared with prior art, the beneficial effects of the present invention are embodied in:
1, device corresponding to all different function devices of the present invention is fully integrated on same chip, has chip ruler
Very little feature small, integrated level is high, low in energy consumption, stability is high, it is compatible with CMOS technology, cost is advantageously reduced, is carried out extensive
Production.
2, the gain bandwidth of stimulated Brillouin scattering of the present invention is within the scope of 10-100MHz, in conjunction with the wide spectral characteristics of photon,
Filter of the present invention has high spectral resolution and big frequency tuning range.
3, the microwave photon filter that different components of the present invention are collectively formed has filter center frequency flexibly adjustable
Advantage, frequency filtering determine that filtering bandwidth is determined by the bandwidth of pump light by the difference on the frequency of pump light and detection light.
Detailed description of the invention
Fig. 1 is the entirety knot the present invention is based on the microwave photon bandpass filtering chip of silicon waveguide stimulated Brillouin scattering effect
Structure schematic diagram；
Specific embodiment
In order to further elucidate the purpose, technical solution and Core Superiority of this programme, below in conjunction with attached drawing, the present invention is made
Further details of explanation.The present embodiment is to give detailed implementation the technical scheme is that premise is implemented
Mode and operating process, but protection scope of the present invention is not limited to following embodiments.
Fig. 1 is the entirety knot the present invention is based on the microwave photon bandpass filtering chip of silicon waveguide stimulated Brillouin scattering effect
Structure schematic diagram.As shown in Figure 1, the present invention is based on the microwave photon bandpass filtering chips of silicon waveguide stimulated Brillouin scattering effect to press
Five parts: phase-modulator 101, wavelength division multiplexer 102 are broadly divided into according to functional characteristics, brillouin gain generates silicon waveguide
103, bandstop filter 104 and germanium silicon photodetector 105.
The input optical signal of single-frequency is inputted from silicon waveguide, first passes around phase-modulator 101.The input of single-frequency
When optical signal passes through phase-modulator, the microwave signal of input is loaded on phase-modulator and is modulated, and input light is as load
Wave generates the sideband of two phase phase difference 180 degrees in its two sides, becomes the input signal of further device.Herein, silicon wave is utilized
The characteristic that the plasma dispersion effect led, i.e. silicon materials refractive index change with the variation of free carrier concentration, passes through adjusting
The alive size of silicon waveguide two sides metal electrode institute after doping, changes the free carrier concentration in silicon waveguide, to change
Become the refractive index of silicon materials, realizes the adjusting to optical signal phase in silicon waveguide.
Then, light carrier and enter wavelength division multiplexer 102 jointly by two sidebands that phase-modulator 101 generates and carry out
Multiplex processing.In this device, the wavelength division multiplexer 102 that is made of the adjustable micro-ring resonator of add drop multiplex type is by phase-modulation
The output signal of device 101 is combined into pump light signals to be transmitted all the way.The output signal and pump light signals of phase-modulator 101 point
It does not input from the input terminal and upstream ends of add drop multiplex type micro-ring resonator, using the plasma dispersion effect of silicon waveguide, passes through
The alive size of silicon waveguide two sides metal electrode institute after adjusting doping, changes the effective refractive index of silicon waveguide, to change
The resonance wavelength of micro-ring resonator realizes the merging transmission of two paths of signals.
Then, the signal being combined into wavelength division multiplexer 102 all the way enters brillouin gain generation silicon waveguide 103, multiplex
Light beam afterwards has the preceding silicon waveguide to Brillouin scattering effect by one section, and is determined whether there are by the size of pumping light power
Brillouin gain generates.When pumping light power is smaller, no brillouin gain is generated, at this time the complete phase of lower sideband signal amplitude
Together；After pumping light power increases and reaches the threshold value of stimulated Brillouin scattering effect in silicon waveguide, in some frequency of upper side band
Gain can be generated within the scope of rate, the frequency and pump light of the gain differ a Brillouin shift, at this time lower sideband signal width
Spend it is different, generate brillouin gain frequency at, upper side band signal Amplitude Ratio lower sideband has more a brillouin gain
Size.
Then, the signal after brillouin gain device enters bandstop filter 104 and is filtered.In this device
In part, filter is made of through-type adjustable micro-ring resonator, it is therefore an objective to which the pump light in this device input signal declines completely
It cuts, to ensure that only light carrier and lower sideband enter germanium silicon photodetector 105.Micro-ring resonator in this device is same
Sample utilizes the plasma dispersion effect of silicon waveguide, alive big by adjusting the silicon waveguide two sides metal electrode institute after adulterating
It is small, change the resonance wavelength of micro-loop, pump light is filtered completely.
Finally, the signal for containing only light carrier and lower sideband enters germanium silicon photodetector 105, beat frequency generates microwave letter
Number and from output end export.
Amplitude-frequency response figure above device architecture shown in Fig. 1 can more intuitively reflect the function of each device.In this reality
Apply in example, firstly, the single-frequency optical signals that wavelength is λ probe are input to phase-modulator 101 from chip input terminal, input it is micro-
Light is modulated in wave signal loading to phase-modulator 101, generates the sideband of two phase phase difference 180 degrees.Then, in wave
Division multiplexer 102, the pump light and modulated signal light that frequency is λ pump are respectively from the upper of add drop multiplex type micro-ring resonator
Row end and input terminal input, and be finally combined into all the way signal output, at this time in signal light comprising detection light carrier, pump light and
Two sidebands.Then, above-mentioned signal successively by subsequent brillouin gain generate silicon waveguide 13, bandstop filter 104 and
Germanium silicon photodetector 105.After pumping light power increases to the threshold value of stimulated Brillouin scattering effect, at this time in upper side band
In the range of differing a Brillouin shift with pumping light frequency, brillouin gain generation is had.In this way, being produced in brillouin gain
At raw frequency, the Amplitude Ratio lower sideband of upper side band signal has more the size of a brillouin gain, causes lower sideband can not
It is completely counterbalanced by, generates microwave signal after eventually passing through germanium silicon photodetector 105.
From the point of view of whole principle and function, it is relevant dry based on lower sideband that the generation of microwave signal is exported in the system
It relates to, the effect of the chip is the bandpass filtering to input microwave signal, and frequency filtering is determined by the difference on the frequency of pump light and light carrier
Fixed, filtering bandwidth is determined by the bandwidth of pump light.
In conclusion being filtered according to the microwave photon band logical based on silicon waveguide stimulated Brillouin scattering effect that the present invention realizes
The bandpass filtering to input microwave signal may be implemented in wave chip, has size is small, integrated level is high, low in energy consumption, stability is high etc.
Feature can filter field in microwave photon and play key effect.
It finally it should be noted that the above is only a preferred embodiment of the present invention, is not intended to limit the invention, ability
The those of ordinary skill in domain should understand that.It is done within the spirit and principles of the present invention it is any modification, equivalent replacement or
Improve etc., it should be included within the scope of the present invention.
Claims (1)
1. a kind of microwave photon bandpass filtering chip based on silicon waveguide stimulated Brillouin scattering effect, which is characterized in that the core
Piece includes phase-modulator (101), wavelength division multiplexer (102), brillouin gain generation silicon waveguide (103), bandstop filter
(104) and germanium silicon photodetector (105), the phase-modulator (101) have light input end and microwave signal input terminal,
The output end of the phase-modulator (101) is connected with the detection light input end of the wavelength division multiplexer (102), the wavelength-division
Multiplexer (102) has detection light input end and pumping light input end, the output end of the wavelength division multiplexer (102) and the cloth
In deep gain generate the input terminal of silicon waveguide (103) and be connected, the brillouin gain generate the output end of silicon waveguide (103) with it is described
The input terminal of bandstop filter (104) be connected, the output end of the bandstop filter (104) and the germanium silicon photodetector
(105) input terminal is connected, and the output end of the germanium silicon photodetector (105) is the output end of the chip；
The microwave signal of input is loaded on the phase-modulator (101) and is modulated to input light, and the wavelength-division is multiple
Pump light and modulated signal light are combined into all the way with device (102), the light beam after multiplex has preceding to being excited cloth by one section
In deep scattering effect silicon waveguide (103), it is defeated to generate microwave signal eventually by germanium silicon photodetector (105) conversion
Out.
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| CN201910402824.4A CN110221455B (en) | 2019-05-15 | 2019-05-15 | Microwave photon band-pass filter chip based on silicon waveguide stimulated Brillouin scattering effect |
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| US20180180655A1 (en) * | 2016-09-01 | 2018-06-28 | Imra America, Inc. | Ultra-low noise photonic phase noise measurement system for microwave signals |
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2019
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| CN101436905A (en) * | 2008-12-18 | 2009-05-20 | 北京邮电大学 | Tunable microwave photon filter based on Brillouin optical fiber laser |
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