CN110213512B

CN110213512B - Arc design structure of multiplication region of multi-tap electron multiplication charge coupled device

Info

Publication number: CN110213512B
Application number: CN201910360955.0A
Authority: CN
Inventors: 王小东; 汪朝敏; 白雪平
Original assignee: CETC 44 Research Institute
Current assignee: CETC 44 Research Institute
Priority date: 2019-04-30
Filing date: 2019-04-30
Publication date: 2021-09-07
Anticipated expiration: 2039-04-30
Also published as: CN110213512A

Abstract

The invention relates to a charge coupled device, in particular to an arc-shaped design structure of a multiplication region of a multi-tap electron multiplication charge coupled device, which comprises a storage region, a photosensitive region, a horizontal register, multiplication registers and an output amplifier, wherein the photosensitive region is connected with the storage region; the horizontal register and the multiplication register are designed into a face-to-face reading structure or a back-to-back reading structure, and the reading structure of the multiplication register is designed into an arc shape of face-to-face reading or back-to-back reading; the invention not only ensures the normal transfer and multiplication of charges, but also effectively reduces the length of a multiplication region, thereby greatly reducing the size of a chip, improving the space utilization rate of the chip and reducing the cost; the multiplication number of the multiplication area can be greatly increased, the multiplication performance of the EMCCD is improved, and the glimmer detection capability of the EMCCD detector is improved.

Description

Arc design structure of multiplication region of multi-tap electron multiplication charge coupled device

Technical Field

The present invention relates to a Charge Coupled Device (CCD), and more particularly, to an arc design structure of multiplication region of a multi-tap Electron Multiplying CCD (EMCCD).

Background

The EMCCD technology is also called as an on-chip gain technology, utilizes the impact ionization effect of charges to realize multiplication and amplification of signal electrons, and is different from the common CCD in that a series of multiplication registers are added between a horizontal register and a read-out amplifier, so that the detection sensitivity of a CCD device is improved. The EMCCD has the characteristics of high detection sensitivity, high spatial resolution, wide response waveband range, high time resolution, flexible and convenient use and the like, and is widely applied to the aspects of low-light detection of aerospace, medicine, industry and the like.

With the strong demand background of the EMCCD in the aspect of high-speed application, the EMCCD with a multi-tap structure is continuously developed, and new structures capable of meeting different application requirements are gradually appeared. In the existing high-speed EMCCD structure, the multiplication register is generally designed into a linear simple structure, and when the multiplication stage number is high, the multiplication area of the structure is longer, so that the area of a chip is multiplied, and adverse factors in the aspects of packaging, refrigeration and the like are brought.

Disclosure of Invention

Aiming at the problems described in the background art, an arc-shaped design structure of a multiplication region of a multi-tap Electron Multiplication Charge Coupled Device (EMCCD) is provided, wherein the EMCCD is a traditional frame transfer structure and comprises a storage region, a photosensitive region, a horizontal register, a multiplication register and a plug, wherein the photosensitive region is connected with the storage region, each storage region is provided with one horizontal register, the back of each horizontal register is connected with the multiplication register, and each multiplication register is connected with at least one output amplifier; the relative positions of the horizontal register and the multiplication register are in a face-to-face reading or back-to-back reading structure, and the reading structures of two adjacent multiplication registers are in a face-to-face reading or back-to-back arc shape.

Furthermore, each multiplication register comprises two arc-shaped structures, the two arc-shaped structures are connected end to form an S-shaped structure, one end of the S-shaped structure is connected with the horizontal register, and the other end of the S-shaped structure is connected with the output amplifier.

Furthermore, when each multiplication register comprises a plurality of arc structures, each arc structure is connected end to end, one end of the arc structure positioned at the head is connected with the horizontal register, and one end of the arc structure positioned at the tail is connected with the output amplifier.

Furthermore, each multiplication register comprises an arc-shaped structure and a linear structure, one end of the arc-shaped structure is connected with the output end of the horizontal register, and the linear structure is arranged between the two arc-shaped structures or between the arc-shaped structure and the output amplifier.

Further, the number of plugs, that is, the number of output amplifiers, is equal to or greater than 4.

The beneficial effects of the structure of the invention are as follows:

1) by adopting the structure, the normal transfer and multiplication of charges are ensured, the length of a multiplication region is effectively reduced, the size of a chip is greatly reduced, the space utilization rate of the chip is improved, and the cost is reduced.

2) By adopting the structure, the area of a chip is saved, the multiplication number of the multiplication region can be greatly increased, the multiplication performance of the EMCCD is improved, and the glimmer detection capability of the EMCCD detector is improved.

Drawings

FIG. 1 is a schematic diagram of a conventional EMCCD detector;

FIG. 2 is a schematic structural diagram of a preferred embodiment of the EMCCD detector of the present invention;

fig. 3 is a schematic structural diagram of another preferred embodiment of the EMCCD detector of the present invention.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

The invention provides an arc-shaped design structure of a multiplication region of a multi-tap electron multiplication charge coupled device, as shown in figure 1, wherein an EMCCD (electron multiplying charge coupled device) is a traditional frame transfer structure and comprises a storage region, a photosensitive region, a horizontal register and a plug, wherein the photosensitive region is connected with the storage region, each storage region is provided with one horizontal register, the back of each horizontal register is connected with the multiplication register, and each multiplication register is connected with at least one output amplifier; the horizontal register and the multiplication register are in a face-to-face reading or back-to-back reading structure, and the reading structure between two adjacent multiplication registers is designed into an arc shape of face-to-face reading or back-to-back reading.

Example 1

As shown in fig. 2, when the multiplication region includes two arc structures, the two arc structures are connected end to form an S-shaped structure, one end of the S-shaped structure is connected to the horizontal register, and the other end is connected to the output amplifier.

Furthermore, when the multiplication region comprises a plurality of arc structures, each arc structure is connected end to end, one end of the arc structure positioned at the head is connected with the horizontal register, and one end of the arc structure positioned at the tail is connected with the output amplifier.

Example 2

This embodiment is an improvement over the technique of embodiment 1, and as shown in fig. 3, the plug further includes a straight line structure, and the straight line structure is disposed between two arc structures or between an arc structure and the output amplifier.

The arc-shaped design structure of the multiplication region is suitable for the multi-tap (namely a plurality of output amplifiers) EMCCD, and the arc-shaped design structure is generally suitable for the EMCCD structure with more than or equal to 4 output amplifiers.

In the description of the present invention, it is to be understood that the terms "coaxial", "bottom", "one end", "top", "middle", "other end", "upper", "one side", "top", "inner", "outer", "front", "center", "both ends", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention.

In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "disposed," "connected," "fixed," "rotated," and the like are to be construed broadly, e.g., as meaning fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; the terms may be directly connected or indirectly connected through an intermediate, and may be communication between two elements or interaction relationship between two elements, unless otherwise specifically limited, and the specific meaning of the terms in the present invention will be understood by those skilled in the art according to specific situations.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims

1. An arc-shaped design structure of a multiplication region of a multi-tap electron multiplication charge coupled device is a traditional frame transfer structure and comprises a storage region, a photosensitive region, horizontal registers, multiplication registers and a plug, wherein the photosensitive region is connected with the storage region, each storage region is provided with one horizontal register, the back of each horizontal register is connected with the multiplication registers, and each multiplication register is connected with at least one output amplifier; the relative positions of the horizontal register and the multiplication registers are face-to-face reading structures or back-to-back reading structures, and the reading structures of two adjacent multiplication registers are face-to-face reading structures or back-to-back reading structures; when each multiplication register comprises a plurality of arc structures, each arc structure is connected end to end, one end of the arc structure positioned at the head is connected with the horizontal register, and one end of the arc structure positioned at the tail is connected with the output amplifier; and the number of plugs, i.e. output amplifiers, is greater than or equal to 4.