CN110197990A - A kind of optics frequency tripling booster - Google Patents
A kind of optics frequency tripling booster Download PDFInfo
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- CN110197990A CN110197990A CN201910579336.0A CN201910579336A CN110197990A CN 110197990 A CN110197990 A CN 110197990A CN 201910579336 A CN201910579336 A CN 201910579336A CN 110197990 A CN110197990 A CN 110197990A
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- frequency
- photonic crystal
- laser
- crystal plate
- silicon photonic
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
- G02F1/354—Third or higher harmonic generation
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The present invention discloses a kind of optics frequency tripling booster, comprising: fundamental frequency lasers, condenser lens and silicon photonic crystal plate.Fundamental frequency lasers are for exporting basic frequency laser, the pumping source as frequency tripled laser signal；Condenser lens is located at the rear side of fundamental frequency lasers, for being focused to basic frequency laser, focuses on it on silicon photonic crystal plate；Silicon photonic crystal plate has the cavernous structure of periodic regular distribution, so that the basic frequency laser for focusing on silicon photonic crystal plate generates resonance effect, with the frequency tripling enhancing to basic frequency laser, obtains frequency tripled laser signal.The present invention utilizes the resonance effect of silicon photonic crystal plate, and the interaction of improving laser and silicon materials in micro-nano size realizes the enhancing of frequency tripling.Silicon photonic crystal plate of the invention is small compared to nonlinear crystal size, is conducive to the application of integrated optics；Local electromagnetic field can be enhanced using resonance effect in silicon photonic crystal plate, and nonlinear response is made to effectively improve.
Description
Technical field
The present invention relates to nonlinear optical technology fields, more particularly, to a kind of optics frequency tripling booster.
Background technique
Optics frequency tripling is an important phenomenon in nonlinear optics, it has application in various fields.It is existing
Nonlinear crystalline material size is big, is unfavorable for integrated application, and due to material dispersion and the problems such as there are phase mismatch.
Nonlinear optics is developed so far, and miniaturization is grown rapidly with integrated device for non-linear optical.It utilizes
Resonance effect in micro-nano structure enhances local electromagnetic field, can promote the interaction of light and substance, enhances nonlinear effect.
This method reduces the demands to pumping light power, improve non-linear efficiency；Secondly micro-nano structure also helps non-linear
The miniaturization of device.For the micro-nano structure of very thin thickness, the phase-matching condition between pump light and harmonic wave is no longer harsh, can neglect
Slightly disregard.Nowadays more commonly used micro-nano structure is metal micro-nanostructure, it utilizes surface plasmon resonance, Ke Yizeng
Strong local electromagnetic field, realizes non-linear enhancing, but the defects such as the absorption loss height of metal material is low with damage threshold also limit
The promotion of non-linear transfer efficiency.
Summary of the invention
In view of the drawbacks of the prior art, it is an object of the invention to solve existing optics frequency tripling booster due to metal material
The technical issues of defects such as the absorption loss height of material is low with damage threshold also limit non-linear transfer efficiency.
To achieve the above object, the present invention provides a kind of optics frequency tripling booster, comprising: fundamental frequency lasers focus thoroughly
Mirror and silicon photonic crystal plate；
The fundamental frequency lasers are for exporting basic frequency laser, the pumping source as frequency tripled laser signal；
The rear side that the condenser lens is located at fundamental frequency lasers makes it focus on silicon for being focused to basic frequency laser
On photonic crystal panel；
The silicon photonic crystal plate has the cavernous structure of periodic regular distribution, so that it is flat to focus on silicon photonic crystal
The basic frequency laser of plate generates resonance effect, with the frequency tripling enhancing to the basic frequency laser, obtains frequency tripled laser signal.
Optionally, in the silicon photonic crystal plate cavernous structure of regular distribution to the refractive index of silicon photonic crystal plate
Periodic modulation is carried out, so that photon band gap is formed in silicon photonic crystal plate, so that basic frequency laser is flat in silicon photonic crystal
Resonance effect is generated in plate, exports the laser enhanced basic frequency laser frequency tripling；
The aperture of the cavernous structure is smaller, and the resonance wavelength of the corresponding laser of the resonance effect is longer.
Optionally, optics frequency tripling booster further include: infrared long wave pass filter and visible band pass filter；
The infrared long wave pass filter is between fundamental frequency lasers and condenser lens, for filtering out in basic frequency laser
Visible component；
The visible band pass filter is located at the rear side of silicon photonic crystal plate, for filtering out in frequency tripled laser signal
Basic frequency laser.
Optionally, optics frequency tripling booster further include: half wave plate and Glan Taylor's polarizer；
The half wave plate is located on rear side of fundamental frequency lasers, for adjusting the polarization direction of basic frequency laser；
The Glan Taylor polarizer is default inclined for making between half wave plate and infrared long wave pass filter
The light in vibration direction passes through, and cooperation half wave plate uses, and adjusts the optical power of basic frequency laser.
Optionally, optics frequency tripling booster further include: collecting lens and spectrometer；
The collecting lens are brilliant for collecting silicon photon between silicon photonic crystal plate and visible band pass filter
The enhanced frequency tripled laser signal of body plate；
The spectrometer is located at the rear side of visible band pass filter, for recording frequency tripled laser signal.
Optionally, the silicon photonic crystal plate can be prepared by SOI, from bottom to up include: silicon lining in the soi structure
Bottom, silica buried layer and top layer silicon, the cavernous structure of the regular distribution is by obtaining top layer silicon etching.
Optionally, the cavernous structure of the regular distribution is round hole, the column arrangement of round hole branch point, line space and
Column pitch is identical.
Optionally, the radius of the round hole is 70nm-105nm, and the depth of round hole is 200nm-300nm, circular hole
Distribution period is 750nm-1000nm, and the distribution period is equal to line space or column pitch.
In general, through the invention it is contemplated above technical scheme is compared with the prior art, have below beneficial to effect
Fruit:
(1) optical fiber frequency tripling booster provided by the invention utilizes the resonance effect of silicon photonic crystal plate, can incite somebody to action
Light constrains in the space of micro-nano magnitude, enhances local light energy, promotes the interaction of light and substance.According to experimental result,
Compared to same thickness without structure silicon plate, mentioning for two orders of magnitude of frequency tripling signal is may be implemented in silicon photonic crystal plate
It rises.Frequency tripling power reaches as high as 32nW, and highest transformation efficiency is 2.1 × 10-6。
(2) optical fiber frequency tripling booster provided by the invention, in this design, the thickness of silicon photonic crystal plate
(220nm) i.e. light-matter interaction distance, less than the wavelength (1984nm) of basic frequency laser, can not consider basic frequency laser with
The phase matched of frequency tripled laser acts on.
(3) optical fiber frequency tripling booster provided by the invention, wherein the size of silicon photonic crystal plate is small, is more advantageous to collection
At the application in optics.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of optics frequency tripling booster provided by the invention；
Fig. 2 is the schematic diagram of silicon photonic crystal flat samples provided by the invention；
Fig. 3 is that silicon photonic crystal plate provided by the invention is compared with the frequency tripling signal strength in no structure silicon plate
Figure；
Fig. 4 is that the frequency tripling performance number that silicon photonic crystal plate provided by the invention generates is shown with pump power situation of change
It is intended to；
Fig. 5 is that the frequency tripling transformation efficiency of silicon photonic crystal plate provided by the invention is illustrated with pump power situation of change
Figure；
In all the appended drawings, identical appended drawing reference is used to denote the same element or structure, wherein 1 is basic frequency laser
Device, 2 be half wave plate, 3 be Glan Taylor polarizer, 4 be infrared long wave pass filter, 5 be condenser lens, 6 be silicon light
Sub- crystal plate, 7 be collecting lens, 8 be visible band pass filter, 9 be spectrometer, 6-1 is silicon substrate, 6-2 is titanium dioxide
Silicon buried layer, 6-3 are photonic crystal panel structure.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in the various embodiments of the present invention described below
Not constituting a conflict with each other can be combined with each other.
Aiming at the above defects or improvement requirements of the prior art, in order to reduce device for non-linear optical size and improve it is non-
Linear transfor efficiency, spy, which proposes, realizes small size, efficient optics frequency tripling booster using silicon photonic crystal slab construction.
The present invention devises a kind of optics frequency tripling booster of high transformation efficiency, it successively includes fundamental frequency lasers, half wave
Piece, Glan Taylor polarizer, infrared long wave pass filter, condenser lens, silicon photonic crystal plate, collecting lens, visible band
Pass filter, spectrometer.The fundamental frequency lasers can pumping source with the pulse laser of output high-power, as frequency tripling.Institute
The intensity of basic frequency laser can be adjusted by stating half wave plate and Glan Taylor polarizer, and laser power is made to be suitable for this
The use scope of experiment.The infrared long wave pass filter can filter out the visible component in basic frequency laser, avoid it to reality
Test the interference of result.The condenser lens focuses on basic frequency laser on silicon photonic crystal plate.The silicon photonic crystal plate
It can produce resonance effect, enhance electromagnetic field intensity in regional area, the interaction of improving laser and silicon generates more
Frequency tripling signal.The collecting lens are used for the frequency tripling signal collection that will be scattered.The visible band pass filter can be filtered
Except the pumping laser in collecting signal, its influence to experimental result is avoided.The spectrometer is for recording frequency tripling signal.
Preferably, silicon photonic crystal slab construction is made by substrate of silicon-on-insulator, and silicon is right near infrared band
Than metal material, have the advantages that absorption loss is low, damage threshold is high, nonlinear effect is strong and CMOS technique compatible, Er Qieguang
Sub- crystal plate structure can produce resonance effect, enhance local electromagnetic field, the interaction of improving laser and silicon.
Preferably, the aperture radius r=70nm-105nm of silicon photonic crystal plate, depth d=200nm-300nm, period p
=750nm-1000nm.
Preferably, by the resonance wavelength of the wavelength alignment silicon photonic crystal plate of basic frequency laser, to realize preferably experiment
Effect.
Preferably, spectrometer used is visible light wave range spectrometer, service band 345nm-1100nm.
Fig. 1 is a kind of schematic diagram of the optics frequency tripling booster of high transformation efficiency provided in an embodiment of the present invention, it is wrapped
It includes: fundamental frequency lasers 1, half wave plate 2, Glan Taylor polarizer 3, infrared long wave pass filter 4, condenser lens 5, silicon light
Sub- crystal plate 6, collecting lens 7, visible band pass filter 8 and spectrometer 9.
Fundamental frequency lasers 1 can pumping source with the pulse laser of output high-power, as frequency tripling.Utilize half wave
Piece 2 and Glan Taylor polarizer 3 can be adjusted the intensity of pulse laser, and laser power is made to be reduced to the use of this experiment
In range.Then laser filters out the visible component in basic frequency laser, avoids it to experiment by infrared long wave pass filter 4
As a result interference.Lens focus 5 is focused by filtered laser to focus on silicon photonic crystal plate 6.It is imitated by resonance
It answers, the interaction of laser and silicon materials is enhanced, and the transfer efficiency of basic frequency laser to frequency tripling is promoted.The frequency tripling of generation is believed
Number with remaining pump light signals successively pass through collecting lens 7 and visible band pass filter 8.Collecting lens 7 can be effectively
Collect the frequency tripling signal of scattering, it is seen that light belt pass filter 8 can avoid its influence to experimental result with filtering pump light.
Last frequency tripling signal enters in spectrometer 9.
In a specific example, fundamental frequency lasers can be the pulse laser of a Wavelength tunable, pulse width
For 45fs, repetition rate 1kHz.Infrared long wave pass filter by wavelength be 1500nm, it is seen that the band of light belt pass filter
Logical region is 640 ± 20nm, and spectrometer work is the convex lens of same specification in 345nm-1100nm, condenser lens and collecting lens
Mirror, focal length 5cm.
Specifically, part most crucial in silicon photonic crystal plate is: the cavernous structure of regular distribution.The regular distribution
Cavernous structure carries out periodic modulation to the refractive index of silicon photonic crystal plate, to form photon in silicon photonic crystal plate
Band gap, so that basic frequency laser generates resonance effect in silicon photonic crystal plate, output swashs basic frequency laser frequency tripling enhancing
Light.Wherein, the aperture of cavernous structure is smaller, and the resonance wavelength of the corresponding laser of resonance effect is longer.It can determine silicon photon
After the resonance wavelength of crystal plate, the output wavelength of fundamental frequency lasers is adjusted, realizes the frequency tripling to the laser of specific wavelength
Enhancing.
Specifically, the cavernous structure of regular distribution can be circular hole, square hole, polygonal hole etc., can also be circular hole and
The combination etc. of square hole.Those skilled in the art can select according to actual needs, and the present invention does any restriction not to this.
In one example, silicon photonic crystal plate can be prepared by SOI.Specifically as shown in Fig. 2, silicon photonic crystal
Flat samples include: silicon substrate 6-1, silica buried layer 6-2, the photonic crystal panel structure 6-3 in top layer silicon.Silicon substrate
With a thickness of 500 μm -600 μm, silica buried layer with a thickness of 2 μm -3 μm, top layer silicon with a thickness of 200nm-300nm, silicon
The aperture of photonic crystal panel can be circular hole, wherein the radius r=70nm-105nm of circular hole, depth d=200nm-300nm,
Distribution period p=750nm-1000nm.
Preferably, Si-Substrate Thickness is 500 μm to the embodiment of the present invention, silica buried layer with a thickness of 2 μm, top layer silicon
With a thickness of 220nm, the aperture radius r=85nm of silicon photonic crystal plate, depth d=220nm, distribution period p=810nm.
Its detailed process prepared are as follows:
(1) the use of silicon-on-insulator is substrate, silicon photonic crystal plate is prepared in its top layer silicon；
(2) photoresist is coated in top layer silicon, carved on a photoresist using electron beam exposure after photonic crystal pattern according to
It is secondary developed, fixing operation, then top layer silicon is etched using inductively coupled plasma etching technology, then residue glue with having
Solvent is removed, and silicon photonic crystal structure is obtained.It is attached to be located at 1984nm by the resonance peak that test can obtain silicon photonic crystal plate
Closely.
As shown in figure 3, being 10mW (peak power 5.3GW/cm in mean power2), central wavelength is the pulse of 1984nm
Under laser pump (ing), frequency tripling enhancing is may be implemented in silicon photonic crystal plate.Fig. 3 has recorded three times of silicon photonic crystal plate respectively
The frequency tripling signal 11 without structure silicon plate of frequency signal 10 and same thickness, the two compare, three in silicon photonic crystal plate
Frequency-doubled signal enhances 160 times.Signal wherein in silicon plate is very weak, is not generally visible.
Further, we measure the power dependent of frequency tripling signal.As shown in figure 4, wherein soft dot is three
Double frequency power value, solid wire are matched curve, slope 2.9, and horizontal axis and the longitudinal axis take log value in figure.As shown in Figure 4, low pump
Under the power of Pu, close cube of (index 2.9) functional relation is presented in frequency tripling power and pump power, this shows collected signal
Strictly generated by third-order nonlinear optical processes.But when average (peak value) pump power of pump power higher than 10mW
(5.3GW/cm2) when, the power growth of frequency tripling signal begins to deviate from cubic relationship curve, and gradually tends to be saturated.It is this existing
As caused by the free-carrier Absorption mainly generated as the two-photon absorption of silicon substrate and therewith.
As shown in figure 5, the present invention calculates the transformation efficiency of frequency tripling, calculation formula isPTIt is frequency tripling
Power, PPIt is the power of pump light.It can be seen that the maximum efficiency value of frequency tripling is 2.1 × 10-6。
To sum up, the advantage of optics frequency tripling booster structure provided by the invention is as follows: (1) structural thickness is small, dimensioning
It is very little small, compared with traditional nonlinear crystal, it is more advantageous to the application of integrated optics.(2) resonance effect of micro-nano structure, realizes
The promotion of non-linear transfer efficiency.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should all include
Within protection scope of the present invention.
Claims (8)
1. a kind of optics frequency tripling booster characterized by comprising fundamental frequency lasers, condenser lens and silicon photonic crystal
Plate；
The fundamental frequency lasers are for exporting basic frequency laser, the pumping source as frequency tripled laser signal；
The condenser lens is located at the rear side of fundamental frequency lasers, for being focused to basic frequency laser, it is made to focus on silicon photon
On crystal plate；
The silicon photonic crystal plate has the cavernous structure of periodic regular distribution, so that focusing on silicon photonic crystal plate
Basic frequency laser generates resonance effect, with the frequency tripling enhancing to the basic frequency laser, obtains frequency tripled laser signal.
2. optics frequency tripling booster according to claim 1, which is characterized in that regular in the silicon photonic crystal plate
The cavernous structure of distribution carries out periodic modulation to the refractive index of silicon photonic crystal plate, thus the shape in silicon photonic crystal plate
At photon band gap, so that basic frequency laser generates resonance effect in silicon photonic crystal plate, output increases basic frequency laser frequency tripling
Strong laser；
The aperture of the cavernous structure is smaller, and the resonance wavelength of the corresponding laser of the resonance effect is longer.
3. optics frequency tripling booster according to claim 1 or 2, which is characterized in that further include: infrared long wave is logical to filter
Piece and visible band pass filter；
The infrared long wave pass filter is visible in basic frequency laser for filtering out between fundamental frequency lasers and condenser lens
Light ingredient；
The visible band pass filter is located at the rear side of silicon photonic crystal plate, for filtering out the base in frequency tripled laser signal
Frequency laser.
4. optics frequency tripling booster according to claim 3, which is characterized in that further include: half wave plate and lattice
Blue Taylor's polarizer；
The half wave plate is located on rear side of fundamental frequency lasers, for adjusting the polarization direction of basic frequency laser；
The Glan Taylor polarizer is between half wave plate and infrared long wave pass filter, for making default polarization side
To light pass through, cooperation half wave plate use, adjust the optical power of basic frequency laser.
5. optics frequency tripling booster according to claim 3, which is characterized in that further include: collecting lens and spectrometer；
The collecting lens are flat for collecting silicon photonic crystal between silicon photonic crystal plate and visible band pass filter
The enhanced frequency tripled laser signal of plate；
The spectrometer is located at the rear side of visible band pass filter, for recording frequency tripled laser signal.
6. optics frequency tripling booster according to claim 2, which is characterized in that the silicon photonic crystal plate can pass through
Prepared by SOI, from bottom to up include: silicon substrate, silica buried layer and top layer silicon, the rule point in the soi structure
The cavernous structure of cloth is by obtaining top layer silicon etching.
7. the optics frequency tripling booster according to claim 2 or 6, which is characterized in that the poroid knot of the regular distribution
Structure is round hole, the round hole branch point column arrangement, and line space is identical with column pitch.
8. optics frequency tripling booster according to claim 7, which is characterized in that the radius of the round hole is 70nm-
105nm, the depth of round hole are 200nm-300nm, and the distribution period of circular hole is 750nm-1000nm, and the distribution period is equal to
Line space or column pitch.
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| CN201910579336.0A CN110197990A (en) | 2019-06-28 | 2019-06-28 | A kind of optics frequency tripling booster |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117075442A (en) * | 2023-08-24 | 2023-11-17 | 上海图双精密装备有限公司 | Photoetching machine mark recognition method based on color glue process |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1603932A (en) * | 2004-11-17 | 2005-04-06 | 中国科学院上海光学精密机械研究所 | Ultraviolet photon crystal optical parameter amplifying device |
| US20050094679A1 (en) * | 1999-05-27 | 2005-05-05 | Kafka James D. | Remote UV laser system and methods of use |
-
2019
- 2019-06-28 CN CN201910579336.0A patent/CN110197990A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050094679A1 (en) * | 1999-05-27 | 2005-05-05 | Kafka James D. | Remote UV laser system and methods of use |
| CN1603932A (en) * | 2004-11-17 | 2005-04-06 | 中国科学院上海光学精密机械研究所 | Ultraviolet photon crystal optical parameter amplifying device |
Non-Patent Citations (1)
| Title |
|---|
| GUOXUN BAN ET AL.: "Fano-resonant silicon photonic crystal slab for efficient third-harmonic generation", 《OPTICS LETTERS》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117075442A (en) * | 2023-08-24 | 2023-11-17 | 上海图双精密装备有限公司 | Photoetching machine mark recognition method based on color glue process |
| CN117075442B (en) * | 2023-08-24 | 2024-04-26 | 上海图双精密装备有限公司 | Photoetching machine mark recognition method based on color glue process |
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