CN110195252B - Method for growing perovskite single crystal by using layer solution method - Google Patents

Method for growing perovskite single crystal by using layer solution method Download PDF

Info

Publication number
CN110195252B
CN110195252B CN201910614086.XA CN201910614086A CN110195252B CN 110195252 B CN110195252 B CN 110195252B CN 201910614086 A CN201910614086 A CN 201910614086A CN 110195252 B CN110195252 B CN 110195252B
Authority
CN
China
Prior art keywords
solution
layer
perovskite
single crystal
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910614086.XA
Other languages
Chinese (zh)
Other versions
CN110195252A (en
Inventor
钟向丽
吴祎玮
王金斌
晏翀恺
方苗苗
李勃超
李小磊
郭科鑫
单心怡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xiangtan University
Original Assignee
Xiangtan University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xiangtan University filed Critical Xiangtan University
Priority to CN201910614086.XA priority Critical patent/CN110195252B/en
Publication of CN110195252A publication Critical patent/CN110195252A/en
Application granted granted Critical
Publication of CN110195252B publication Critical patent/CN110195252B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/12—Halides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/14—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention provides a method for growing perovskite single crystals by a layer solution method, belonging to the technical field of perovskite material single crystals. According to the invention, the freezing layer of the solution A or the solution B is added between the solution A and the solution B, so that the mixing rate of the solution A layer and the solution B layer can be slowed down, and the heat generated by the reaction of the two layers of solutions can be offset by the freezing layer, so that the reaction between the two layers of solutions is smoother, the crystal nucleation and growth processes are more stable, and the perovskite single crystal obtained after standing culture has large size, high quality and smoother surface. The method provided by the invention is simple to operate, does not need precise growth equipment, has low requirements on experimental environment and low cost, and has wider universality on preparation of single crystals. The embodiment result shows that the length of the perovskite single crystal obtained by the method can reach 0.5-2 cm, and the crystal crystallinity is good.

Description

Method for growing perovskite single crystal by using layer solution method
Technical Field
The invention relates to the technical field of perovskite material single crystals, in particular to a method for growing perovskite single crystals by a layer solution method.
Background
The perovskite is oneHas ABX3The material with the structure of the compound is described. In recent years, perovskite materials have attracted attention from researchers in the fields of photoelectric conversion, electroluminescence, detectors, ferroelectrics, and the like, and have been widely used in life. However, it is worth noting that most of the perovskite materials to be researched and applied are bulk materials and thin film materials, and the number of grain boundaries and defects inside the perovskite materials is large, which is not favorable for researching the crystal structure of the materials, and simultaneously, the performance of the materials is reduced, and the service life is shortened.
In order to further improve the properties of perovskite materials, single crystal materials are gaining increasing attention. Single crystal materials have no internal defects compared to thin film materials or bulk materials and are the best targets for characterizing crystal structures; the service life, the performance and the like of the single crystal material are greatly improved compared with those of materials in other forms, for example, the efficiency of the perovskite single crystal battery is over 18 percent; the perovskite single crystal detector has wide detection performance and can detect X rays, gamma rays, visible light and the like.
Although perovskite single crystal materials have been widely studied and applied, the growth success rate of single crystals is low and the preparation is very difficult. In recent years, methods for synthesizing perovskite single crystals mainly include slow evaporation, reverse temperature growth, antisolvent evaporation-assisted method, top-seed molten salt method, bottom-seed crystallization method, cooling method, bridgeman method, solvothermal growth method, and the like. However, the conventional method has strict requirements on experimental environment, needs strict temperature control, has complex operation process, low single crystal growth success rate, and low quality and small size of the prepared single crystal.
Disclosure of Invention
In view of the above, the present invention aims to provide a method for growing a perovskite single crystal by a layer solution method. The method provided by the invention is simple to operate, has low requirements on experimental environment, high single crystal growth success rate, and good single crystal crystallinity, large size and high quality.
In order to achieve the above object, the present invention provides the following technical solutions:
the invention provides a method for growing perovskite single crystal by a layer solution method, which comprises the following steps:
sequentially adding the solution B, the solution A or the frozen layer of the solution B and the solution A into a crystal growth container, and standing and culturing to obtain a perovskite single crystal; the structural general formula of the perovskite is AaBbXnWherein a: b: n is (0.5 to 3: 3 to 9); the solution A is a precursor solution for providing A ions and/or X ions in the perovskite; the solution B is a precursor solution for providing B ions and/or X ions in the perovskite; at least one of the solution A and the solution B comprises X ions.
Preferably, the solution A is a halide solution, and the structural general formula of the halide is MXnWherein M is one of Cu, Ge, Bi, Sn, Pb, Cs, Rb, Fe, Co, Ni, Cd, Hg, Mn and Ti; x is one or more of F, Cl, Br and I; n is 0-6;
or the halide is one or more of CHNHBr, HN-CH ═ NHBr, (CH) NBr, CHNHI, HN-CH ═ NHI, (CH) NI, CHNHCl, HN-CH ═ NHCl and (CH) NCl;
the solvent of the halide solution is one or more of hydrobromic acid, hydroiodic acid, hydrochloric acid, gamma-butyrolactone, N-dimethylformamide, dimethyl sulfoxide and N-methyl-2-pyrrolidone; the molar concentration of the solution A is 0.01-6 mol/L.
Preferably, the solute of the solution B has the structural formula CXnWherein C is CH6N、C2H8N、C3H10N、C4H12N、C6H8N、C7H10N、C8H12N、C9H14N、C10H16N and HC (NH)2)2One or more of I; x is one or more of F, Cl, Br and I; n is 0-6;
the solvent of the solution B is one or more of hydrobromic acid, hydroiodic acid, hydrochloric acid, gamma-butyrolactone, N-dimethylformamide, dimethyl sulfoxide and N-methyl-2-pyrrolidone, and the molar concentration of the solution B is 0.01-6 mol/L.
Preferably, the adding rates of the solution B and the solution A are 0.01-10 mL/min independently.
Preferably, the crystal growth vessel is an elongated tubular vessel; the inner diameter of the crystal growth container is 0.05-50 cm; the inner wall of the crystal growth container is made of glass or polytetrafluoroethylene.
Preferably, the adding heights of the solution A and the solution B in the crystal growth container are independently 0.01-10 cm.
Preferably, the frozen layer of the solution A or the solution B is cylindrical; the thickness of the freezing layer is 0.01-10 cm, and the diameter of the freezing layer is the same as the inner diameter of the crystal growth container.
Preferably, the temperature of the freezing layer is-50 to 20 ℃.
Preferably, the temperature of the static culture environment is-50-150 ℃, and the time is 1-60 days.
The invention provides a method for growing perovskite single crystal by a layer solution method, which can slow down the mixing speed of a solution A layer and a solution B layer by adding a freezing layer of the solution A or the solution B between the solution A and the solution B, and the heat generated by the reaction of the two layers of solutions can be offset by the freezing layer, so that the reaction between the two layers of solutions is smoother, the crystal nucleation and growth processes are more stable, and the perovskite single crystal obtained after standing culture has large size, high quality and smoother surface. The method provided by the invention is simple to operate, does not need precise growth equipment, has low requirements on experimental environment and low cost, and has wider universality on preparation of single crystals. The embodiment result shows that the length of the perovskite single crystal obtained by the method can reach 0.5-2 cm, the crystallinity of the crystal is good, and the crystal quality is high.
Drawings
FIG. 1 is a schematic diagram of a perovskite single crystal growth process;
FIG. 2 is a schematic representation of a perovskite single crystal obtained in example 1;
FIG. 3 is an X-ray diffraction pattern of the perovskite single crystal obtained in example 1.
Detailed Description
The invention provides a method for growing perovskite single crystal by a layer solution method, which comprises the following steps:
sequentially adding the solution B, the solution A or the frozen layer of the solution B and the solution A into a crystal growth container, and standing and culturing to obtain a perovskite single crystal; the structural general formula of the perovskite is AaBbXnWherein a: b: n is (0.5 to 3: 3 to 9); the solution A is a precursor solution for providing A ions and/or X ions in the perovskite; the solution B is a precursor solution for providing B ions and/or X ions in the perovskite; at least one of the solution A and the solution B comprises X ions.
In the invention, the solution A is preferably a halide solution, and the structural general formula of the halide is MXnWherein M is preferably one or more of Cu, Ge, Bi, Sn, Pb, Cs, Rb, Fe, Co, Ni, Cd, Hg, Mn and Ti; x is preferably one or more of F, Cl, Br and I; n is 0-6; specifically, the halide is preferably bismuth iodide BiI3Bismuth chloride BiCl3Bismuth bromide BiBr3Bismuth fluoride BiF3Copper iodide CuI2Copper chloride CuCl2Copper bromide CuBr2Copper fluoride CuF2Tin iodide SnI2SnCl, tin chloride2Tin bromide SnBr2SnF (tin fluoride)2PbI iodide2Lead chloride PbCl2Lead bromide PbBr2PbF fluoride2Germanium iodide GeI2Germanium chloride GeCl2Germanium bromide GeBr2Germanium fluoride GeF2One or more of the above;
or the halide is preferably one or more of bromomethylamine CHNHBr, bromoformamidine HN-CH-NHBr, tetramethylammonium bromide (CH) NBr, iodomethylamine CHNHI, iodoformamidine HN-CH-NHI, tetramethylammonium iodide (CH) NI, chloromethylamine CHNHCl, chloromethylamidine HN-CH-NHCl and tetramethylammonium Chloride (CH) NCl;
the solvent of the halide solution is preferably one or more of hydrobromic acid, hydroiodic acid, hydrochloric acid, gamma-butyrolactone, N-dimethylformamide, dimethyl sulfoxide and N-methyl-2-pyrrolidone; the molar concentration of the solution A is preferably 0.01-6 mol/L, and more preferably 1-3 mol/L.
In the present invention, the solutionThe solute of the liquid B has the structural general formula CXnWherein C is a methylamino group CH6N, ethylamine group C2H8N, propylamino radical C3H10N, butylamine radical C4H12N, phenylamine radical C6H8N, benzylamine group C7H10N, phenethylamine group C8H12N, phenylpropylamino group C9H14N, a phenylbutylamine group C10H16N and the formamidine radical HC (NH)2)2One or more of I; x is one or more of F, Cl, Br and I; n is 0-6;
the solvent of the solution B is one or more of hydrobromic acid, hydroiodic acid, hydrochloric acid, gamma-butyrolactone, N-dimethylformamide, dimethyl sulfoxide and N-methyl-2-pyrrolidone, and the molar concentration of the solution B is preferably 0.01-6 mol/L, more preferably 1-3 mol/L; the addition mode of the solution B and the solution A is preferably dropwise, and the addition rate of the solution B and the solution A is preferably 0.01-10 mL/min independently, and more preferably 0.2-2 mL/min independently.
In the present invention, the crystal growth vessel is preferably an elongated tubular vessel; the inner diameter of the crystal growth container is preferably 0.05-50 cm, and more preferably 0.5-20 cm; the height of the crystal growth container is preferably larger than the total height of the solution B, the solution A or the frozen layer of the solution B and the solution A in the crystal growth container; the material of the inner wall of the crystal growth container is preferably glass or polytetrafluoroethylene; the invention can avoid the reaction between the inner pipe wall and the solution by selecting the inner pipe wall made of glass or polytetrafluoroethylene. In the present invention, the inner tube wall of the crystal growth container needs to be smooth and has no obvious scratches under an optical microscope, because the scratches on the inner wall of the container provide an attachment place for the growth and nucleation of the crystal, and if the inner wall is scratched too much, the crystal tends to be small and broken.
In the invention, the height of the solution A in the crystal growth container is preferably 0.01-10 cm, and more preferably 0.1-6 cm; the height of the solution B in the crystal growth container is 0.01-10 cm, and more preferably 0.1-6 cm. The invention can effectively control the mixing diffusion rate, reaction energy release, crystal nucleation and growth process of the solution A and the solution B by controlling the heights of the solution A and the solution B.
In the present invention, the frozen layer of the solution a or the solution B is preferably cylindrical in shape; the thickness of the freezing layer is preferably 0.01-10 cm, and more preferably 0.1-3 cm; the diameter of the frozen layer is preferably the same as the inner diameter of the crystal growth vessel. In the invention, the temperature of the frozen layer is preferably-50-20 ℃, and more preferably-30-10 ℃. In the present invention, when the temperature of the frozen layer is more than 0 ℃, the present invention preferably converts the liquid into the solid by means of high pressure compression. In the invention, the environment temperature of the static culture is preferably-50-150 ℃, and more preferably-20-100 ℃; the time for the static culture is preferably 1 to 60 days, and more preferably 7 to 14 days.
The perovskite single crystal growth process is schematically shown in figure 1, the mixing rate of the solution A layer and the solution B layer can be slowed down by adding the freezing layer of the solution A or the solution B between the solution A and the solution B, and the heat generated by the reaction of the two layers of solutions can be offset by the freezing layer, so that the reaction between the two layers of solutions is smoother, the crystal nucleation and growth processes are more stable, and the perovskite single crystal obtained after standing culture has large size, high quality and smoother single crystal surface. In addition, the frozen layer can be used as a reaction raw material of the solution A or the solution B while providing a cooling effect.
The method for growing a perovskite single crystal by the layer solution method according to the present invention will be described in detail with reference to examples, but they should not be construed as limiting the scope of the present invention.
Example 1
Sequentially adding 3cm of solution B (BiI) into a glass crystal growth container with an inner diameter of 10mm31mol/L), 1cm of an ice layer of the solution B (temperature is-20 ℃), 3cm of a solution A (1 mol/L of an ethanol solution of PhAI (benzyl ammonium iodide), wherein the dropping rate of the solution A, B is 1mL/min, and the perovskite single crystal PhABiI is obtained after standing and culturing for 10 days at the temperature of 25 DEG C3Of the perovskite Single Crystal obtainedThe physical diagram is shown in FIG. 2.
As is clear from FIG. 2, the perovskite single crystal obtained by the method of the present invention has a size of 1.1cm, good crystallinity and high crystal quality.
The obtained perovskite single crystal was subjected to X-ray diffraction, and the obtained results are shown in fig. 3. As can be seen from FIG. 3, the XRD diffraction pattern has only three distinct characteristic peaks, and the distribution of the three peaks has a certain rule, which is obviously a diffraction peak corresponding to different crystal faces of a crystal, indicating that the tested material is of a single-crystal structure.
Example 2
Sequentially adding 2cm of solution B (C) into a polytetrafluoroethylene crystal growth container with an inner diameter of 10cm4H12BrN (tetramethylammonium bromide) in DMF, 1mol/L), 0.5cm of a frozen layer of solution B (temperature 10 ℃), 4cm of solution A (CuBr)2(copper bromide) hydrobromic acid solution, 1mol/L), wherein the dropping rate of the solution A, B is 0.2mL/min, and perovskite single crystal [ C ] is obtained after standing and culturing for 30 days at-20 DEG C4H12N]2CuBr4。
Example 3
Sequentially adding 2cm of solution B (C) into a polytetrafluoroethylene crystal growth container with an inner diameter of 20cm4H12IN (tetramethylammonium iodide) IN DMF at 1mol/L, 0.1cm of frozen layer of solution B at 0 deg.C, 1cm of solution A (CuI)21mol/L of DMF solution of (copper iodide), wherein the dropwise addition rate of the solution A, B is 2mL/min, and perovskite single crystal [ C ] is obtained after standing and culturing for 20 days at 100 DEG C4H12N]2CuI4。
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.

Claims (7)

1. A method for growing perovskite single crystal by a layer solution method is characterized by comprising the following steps:
in the crystal growthSequentially adding the solution B and the frozen layer of the solution A or the frozen layer of the solution B and the solution A into the long container, and standing and culturing to obtain the perovskite single crystal; the structural general formula of the perovskite is AaBbXnWherein a: b: n is (0.5 to 3: 3 to 9); the solution A is a precursor solution for providing A ions and/or X ions in the perovskite; the solution B is a precursor solution for providing B ions and/or X ions in the perovskite; at least one of the solution A and the solution B comprises X ions;
the solution A is a halide solution, and the structural general formula of the halide is MXnWherein M is one or more of Cu and Bi; x is one or more of F, Cl, Br and I; n is 2-6; the solvent of the halide solution is one or more of hydrobromic acid, hydroiodic acid, hydrochloric acid, gamma-butyrolactone, N-dimethylformamide, dimethyl sulfoxide and N-methyl-2-pyrrolidone; the molar concentration of the solution A is 0.01-6 mol/L;
the solute of the solution B has the structural general formula CXnWherein C is CH6N、C2H8N、C3H10N、C4H12N、C6H8N、C7H10N、C8H12N、C9H14N and C10H16One or more of N; x is one or more of F, Cl, Br and I; n is 1-6;
the solvent of the solution B is one or more of hydrobromic acid, hydroiodic acid, hydrochloric acid, gamma-butyrolactone, N-dimethylformamide, dimethyl sulfoxide and N-methyl-2-pyrrolidone, and the molar concentration of the solution B is 0.01-6 mol/L.
2. The method according to claim 1, wherein the addition rates of the solution B and the solution A are 0.01-10 mL/min independently.
3. The method of claim 1, wherein the crystal growth vessel is an elongated tubular vessel; the inner diameter of the crystal growth container is 0.05-50 cm; the inner wall of the crystal growth container is made of glass or polytetrafluoroethylene.
4. The method according to claim 1, wherein the addition heights of the solution A and the solution B in the crystal growth vessel are independently 0.01-10 cm.
5. The method of claim 1, wherein the frozen layer of solution a or the frozen layer of solution B is cylindrical in shape; the thickness of the freezing layer is 0.01-10 cm, and the diameter of the freezing layer is the same as the inner diameter of the crystal growth container.
6. The method according to claim 1 or 5, wherein the temperature of the frozen layer is-50 to 20 ℃.
7. The method according to claim 1, wherein the static culture is carried out at an ambient temperature of-50 to 150 ℃ for 1 to 60 days.
CN201910614086.XA 2019-07-09 2019-07-09 Method for growing perovskite single crystal by using layer solution method Active CN110195252B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910614086.XA CN110195252B (en) 2019-07-09 2019-07-09 Method for growing perovskite single crystal by using layer solution method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910614086.XA CN110195252B (en) 2019-07-09 2019-07-09 Method for growing perovskite single crystal by using layer solution method

Publications (2)

Publication Number Publication Date
CN110195252A CN110195252A (en) 2019-09-03
CN110195252B true CN110195252B (en) 2020-09-29

Family

ID=67755946

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910614086.XA Active CN110195252B (en) 2019-07-09 2019-07-09 Method for growing perovskite single crystal by using layer solution method

Country Status (1)

Country Link
CN (1) CN110195252B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113106535B (en) * 2021-03-11 2022-09-13 合肥工业大学 Preparation method of two-dimensional perovskite single crystal
CN114150363A (en) * 2021-12-13 2022-03-08 吉林大学 Growth method of tin-based perovskite single crystal

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108950675A (en) * 2018-07-25 2018-12-07 陕西师范大学 Hybrid inorganic-organic perovskite method for preparing single crystal based on two phase process

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7094301B2 (en) * 2003-03-21 2006-08-22 Air Products And Chemicals, Inc. Method of forming a joint
JP4756312B2 (en) * 2004-11-15 2011-08-24 株式会社豊田中央研究所 Anisotropic shaped powder, method for producing the same, and method for producing crystal-oriented ceramics
CN104911705B (en) * 2015-05-18 2019-06-11 陕西师范大学 ABX is grown in cryogenic fluid3The method of perovskite monocrystalline

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108950675A (en) * 2018-07-25 2018-12-07 陕西师范大学 Hybrid inorganic-organic perovskite method for preparing single crystal based on two phase process

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Ice Melting to Release Reactants in Solution Syntheses;Hehe Wei et al.;《Angewandte Chemie International Edition》;20180319;第57卷(第13期);参见摘要部分、第3354页右栏第2段-第3355页左栏第1段、图1 *
Metal-free three-dimensional perovskite ferroelectrics;Heng-Yun Ye et al.;《SCIENCE》;20181231;全文 *
钙钛矿太阳电池研究进展：薄膜形貌控制与界面工程;薛启帆等;《化学学报》;20141116(第3期);参见第181页右栏最后1段、183页第4段 *

Also Published As

Publication number Publication date
CN110195252A (en) 2019-09-03

Similar Documents

Publication Publication Date Title
CN110195252B (en) Method for growing perovskite single crystal by using layer solution method
CN108118395A (en) A kind of method that chemical vapor deposition prepares two tungsten selenide monocrystal thin films
CN112853466B (en) Method for growing copper-based lead-free perovskite single crystal by low-temperature solvent method
CN103205706B (en) A kind of preparation method of cubic structure MgZnO film
JP6385923B2 (en) Thermochromic layer for glass, thermochromic coating, glass, method for producing thermochromic layer, method for producing thermochromic coating, and method for using thermochromic layer
CN106637403A (en) Preparation method of perovskite single crystals
CN109052470A (en) A kind of inorganic non-lead caesium bismuth halogen Cs3Bi2X9Perovskite micron disk and its synthetic method
CN103632754A (en) Ultrathin aluminum-doped ZnO transparent conductive film and preparing method thereof
CN113652753B (en) Vanadium-doped single-crystal tungsten oxide electrochromism and energy storage material and preparation method thereof
CN109989002A (en) HfO2/VO2/HfO2Sandwich structure smart window film and preparation method thereof
Chen et al. Creation of biaxial body center cubic tungsten nanorods under dynamic shadowing effect
Blednov et al. Epitaxial calcium and strontium fluoride films on highly mismatched oxide and metal substrates by MOCVD: Texture and morphology
Teki et al. Low temperature synthesis of single crystalline ZnO nanorods by oblique angle deposition
JP5879427B2 (en) Fabrication method of multi-element doped zinc oxide thin film
CN109056010B (en) Method for preparing erbium metal film by using polar aprotic organic solvent through electrodeposition
CN112210816B (en) Perovskite single crystal sheet, method for promoting growth of perovskite single crystal sheet and application of perovskite single crystal sheet
US20080096097A1 (en) Novel narrowband crystal UV filters
US20240003051A1 (en) New transparent conductive oxide thin film and use thereof
CN113279063A (en) IV-VI family infrared semiconductor film and preparation method thereof
CN117684248A (en) Method for promoting perovskite monocrystal growth by breathable flexible container and X-ray detector
CN112760714B (en) Method for preparing single crystal two-dimensional transition metal chalcogenide
CN102199770B (en) Large-area preparation method for zinc oxide nanorod array
CN110541187A (en) Perovskite single crystal with light trapping structure and preparation method thereof
JP2000211999A (en) Production of fluoride
CN115247280B (en) Copper-based halide Cs 3 Cu 2 I 5 Micro-scale single crystal and preparation method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant