CN110194481B - Bi2OS2Deposited corrugated ZnO nanorod array and preparation and application thereof - Google Patents
Bi2OS2Deposited corrugated ZnO nanorod array and preparation and application thereof Download PDFInfo
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Abstract
The invention belongs to the field of solar cells and discloses Bi2OS2A deposited corrugated ZnO nano-rod array, and preparation and application thereof. Reacting Zn (COOH)2The ethanol solution is coated on the surface of an ITO substrate in a spinning way, the temperature is raised to 200-300 ℃, annealing treatment is carried out, a corrugated ZnO seed crystal layer is obtained, and then Zn (NO) is immersed3)2·6H2Growing nanorods in an aqueous solution of O and hexamethylenetetramine at the temperature of 85-95 ℃, and cleaning and drying to obtain an ITO substrate loaded with a ZnO nanorod array; adding Bi2OS2The powder is ultrasonically dispersed in water, then Bi is added2OS2And dropwise adding the dispersion liquid onto the ZnO nanorod array for deposition, cleaning and drying to obtain a product. Bi of the present invention2OS2The deposited corrugated ZnO nanorod array can be used as an electron transport layer of the organic solar cell, and finally the short-circuit current and the photoelectric conversion efficiency of the organic solar cell are improved.
Description
Technical Field
The invention belongs to the field of solar cells, and particularly relates to Bi2OS2A deposited corrugated ZnO nano-rod array, and preparation and application thereof.
Background
The nano zinc oxide has various forms, including zinc oxide nano wires, zinc oxide nano trees, zinc oxide nano rods and the like, and the three-dimensional corrugated zinc oxide nano rod array can increase the contact area of an electron transmission layer and an active layer, so that electrons of the active layer in the inverted polymer solar cell can be effectively collected. In addition, the light absorption of the corrugated zinc oxide nanorod array is in an ultraviolet region, and the stability of the polymer solar cell can be enhanced by blocking the ultraviolet induced light degradation of the organic material.
Researches show that the zinc oxide nano rod synthesized by a hydrothermal method mainly has surface defects, so that the recombination rate of electron holes in the surface defects is greatly improved, and the electron mobility does not reach an ideal value; in addition, the presence of defects can also affect the stability of device performance. In recent years, non-toxic and ultra-high mobility layered bismuth compounds have attracted much attention, among which bismuth oxide disulfide (Bi)2OS2) Not only has direct optical transition, but also has good electronic property. Bi2OS2Has a crystal structure of [ BiS2]-Layer and [ Bi ]2O2]2+Layer composition of Bi2OS2Is a narrow band gap semiconductor material with wide light absorption range and the band gap is about 1 eV.
The polymer solar cell is of a sandwich structure and comprises a cathode substrate ITO, an electron transport layer, an active layer, a hole transport layer and anode metal. The zinc oxide electron transport layer is introduced between the cathode and the organic active layer to reduce the loss of charges between the ITO and the organic active layer, and the introduction of the interface engineering has the main functions of: 1. inducing the redistribution of interface charges to realize the modulation of the interface characteristics between the organic active layer and the electrode; 2. the interface barrier between the active layer and the electrode originally exists is compensated by the introduction of the interface layer; the use of the interface layer can improve the roughness of the ITO substrate so as to avoid the direct contact of the active layer and the electrode, improve the charge collection of the electrode and reduce the leakage current; 4. the interface material can also prevent the damage of water and oxygen to the device and improve the stability of the PSCs device; 5. some of the interfacial layers also enhance the absorption of light by the device, especially in the visible-near infrared range, to modulate the internal optical field intensity and its distribution.
Disclosure of Invention
Based on the above prior art, the primary object of the present invention is to provide Bi2OS2A preparation method of a deposited corrugated ZnO nano-rod array.
Another object of the present invention is to provide Bi prepared by the above method2OS2And (4) depositing a corrugated ZnO nanorod array.
It is still another object of the present invention to provide the above-mentioned Bi2OS2The deposited corrugated ZnO nanorod array is used as an electron transport layer in an organic solar cell.
The purpose of the invention is realized by the following technical scheme:
bi2OS2The preparation method of the deposited corrugated ZnO nanorod array comprises the following preparation steps:
(1) reacting Zn (COOH)2The ethanol solution is coated on the surface of an ITO substrate in a spinning mode, then the temperature is increased to 200-300 ℃, and annealing treatment is carried out, so that a corrugated ZnO seed crystal layer is obtained;
(2) adding Zn (NO)3)2·6H2Dissolving O and hexamethylenetetramine in water to form a growth solution, horizontally immersing the ITO substrate containing the corrugated ZnO seed crystal layer obtained in the step (1) into the growth solution, growing nanorods at the temperature of 85-95 ℃, taking out, cleaning and drying to obtain the ITO substrate loaded with a ZnO nanorod array;
(3) adding Bi2OS2Grinding the powder and ultrasonically dispersing the powder in water to obtain Bi2OS2Dispersing and then adding Bi2OS2Dropwise adding the dispersion liquid onto the ZnO nanorod array obtained in the step (2) for deposition, washing with absolute ethyl alcohol, and drying to obtain Bi2OS2And (4) depositing a corrugated ZnO nanorod array.
Preferably, the temperature rise rate in the step (1) is 5-10 ℃/min.
Preferably, the thickness of the corrugated ZnO seed crystal layer in the step (1) is 15-25 nm.
Preferably, the time for growing the nanorods in the step (2) is 45-60 min.
Preferably, the length of the ZnO nanorod in the step (2) is 50-200 nm.
Preferably, said Bi in step (3)2OS2The mass concentration of the dispersion is 1-5%, and the particle size is 10-100 nm.
Preferably, the deposition time in the step (3) is 20-40 s.
Bi2OS2The deposited corrugated ZnO nanorod array is prepared by the method.
Bi as defined above2OS2The deposited corrugated ZnO nanorod array is used as an electron transport layer in an organic solar cell.
Furthermore, the organic solar cell comprises a cathode substrate, an electron transport layer, an active layer, a hole transport layer and an anode layer, wherein the electron transport layer is made of Bi2OS2And (4) depositing a corrugated ZnO nanorod array.
Further, the cathode substrate is selected from indium tin oxide glass (ITO), the active layer material is PTB7: PCBM (poly 2, 6-dibromo-4, 8-bis [ (2-ethylhexyl) oxy group]-benzo [1,2-B:4,5-B']Dithiophene [6, 6 ]]-phenyl-C71-methyl butyrate) with the thickness of 150-200nm, wherein the hole transport layer is made of MoO (MoO)3The thickness of the anode layer is 5-10nm, the material of the anode layer is silver, and the thickness of the anode layer is 85-95 nm.
The preparation method and the obtained product have the following advantages and beneficial effects:
bi of the present invention2OS2The deposited corrugated ZnO nanorod array can be used as an electron transport layer applied to an organic solar cell, and Bi with high conductivity and good light absorption is deposited in the electron transport layer2OS2The purpose of improving the performance of the device is achieved. Firstly, the contact area between the corrugated ZnO and the active layer is large, so that the exciton transmission efficiency can be improved; second Bi2OS2The powder has higher conductivity, and can be effectively improvedThe charge transmission efficiency of the organic solar cell is improved, the defects on the surface of ZnO are improved, the capture of excitons by the defects is reduced, and the recombination of electron hole pairs is reduced; final deposition of Bi2OS2The crystallinity of the active layer can be improved by the corrugated ZnO nanorod array, so that the light absorption intensity of the active layer is improved, and the short-circuit current and the photoelectric conversion efficiency of the organic solar cell are finally improved.
Drawings
FIG. 1 is a sectional view (a) and a plan view (b) of an electron transport layer of a Bi2OS 2-deposited corrugated ZnO nanorod array obtained in step (3) of example 1 of the present invention.
FIG. 2 shows Bi obtained in step (4) of example 1 of the present invention2OS2Active layer of the deposited corrugated ZnO nanorod array (Curve 2, Structure: ITO/ZnO: Bi)2OS2/PTB7: PCBM) with undeposited Bi2OS2The X-ray diffraction pattern of the active layer (curve 1, structure: ITO/ZnO/PTB7: PCBM) of the pure corrugated ZnO nanorod array of (C-ZnO/PTB) was determined.
FIG. 3 shows the organic solar cell obtained in example 1 and the undeposited Bi2OS2The current density and voltage relation curve chart of the organic solar cell using the pure corrugated ZnO nanorod array as the electron transport layer is used for comparison.
Detailed Description
The present invention will be described in further detail with reference to examples, but the embodiments of the present invention are not limited thereto.
Example 1
A Bi of this example2OS2A deposited corrugated ZnO nano-rod array and an organic solar cell prepared by the same. The preparation method comprises the following specific steps:
(1) sequentially ultrasonically cleaning the ITO substrate for 10 minutes by using liquid detergent, deionized water, titanium tetrachloride aqueous solution, acetone, absolute ethyl alcohol and isopropanol; then drying in a vacuum drying oven at 80 ℃. And carrying out plasma surface treatment on the surface of the cleaned and dried ITO substrate for 10 minutes, cleaning residual organic matters on the surface of the ITO substrate and improving the work function of the ITO substrate.
(2) Treated in step (1)The ITO surface is spin-coated with a corrugated ZnO seed crystal layer, the seed crystal layer is 15-25nm corrugated ZnO particles, and the method comprises the following specific steps: reacting Zn (COOH)2The ethanol solution is coated on the surface of the cathode ITO substrate treated in the step (1) in a spinning mode, the revolution is 3500rpm, and the time is 40 s; and annealing the cathode ITO substrate which is subjected to spin coating, raising the temperature to 280 ℃ at the room temperature at the speed of 10 ℃/min, and treating for 1 hour at the constant temperature of 280 ℃ to prepare the corrugated ZnO seed crystal layer with the thickness of 15-25 nm.
(3) Growing ZnO nanorods on the corrugated ZnO seed crystal layer treated in the step (2) and depositing Bi2OS2The method comprises the following specific steps: zn (NO) is firstly added3)2·6H2Dissolving O and hexamethylenetetramine in 200ml of deionized water to form a growth solution, and horizontally soaking the ITO substrate with the corrugated ZnO seed crystal layer grown in the step (2) in the growth solution at 90 ℃ for growth for 50 min. Taking out, washing off unadhered nanorods by using deionized water, and drying in an oven, wherein ZnO nanorods with the length of 50-200nm are loaded on the substrate. Then 10mg of Bi2OS2Grinding and dispersing the powder in 1ml of deionized water, ultrasonically dispersing the mixed solution, and filtering the mixture by using a 0.22 mu m organic filter head to prepare 1 wt.% Bi2OS2A solution; mixing 1% of Bi2OS2Dripping the solution on the dried corrugated ZnO nano-rod, depositing for 30s, washing with absolute ethyl alcohol, and drying in an oven to obtain Bi2OS2And the deposited corrugated ZnO nanorod array is used as an electron transport layer.
(4) Spin coating an active layer solution on the surface of the electron transport layer at the rotation speed of 1000rpm for 40 s; the active layer is formed by blending PTB7 and PCBM, and the thickness of the active layer is about 150-200 nm; and after the active layer is spin-coated, placing the active layer in vacuum for 2-3 hours.
(5) Evaporating a hole transport layer MoO on the surface of the active layer3The thickness is 5-10 nm.
(6) Silver as an anode layer was deposited on the surface of the hole transport layer to a thickness of 85 to 95nm, thereby obtaining an organic solar cell of this example.
This example of Bi obtained in step (3)2OS2The cross-sectional view (a) and the plan view (b) of the deposited corrugated ZnO nanorod array electron transport layer are shown in FIG. 1.
FIG. 2 shows Bi obtained in step (4) of this example2OS2Active layer of deposited corrugated ZnO nano-rod array (structure: ITO/ZnO: Bi)2OS2/PTB7: PCBM) with undeposited Bi2OS2The X-ray diffraction pattern of the active layer (structure: ITO/ZnO/PTB7: PCBM) of the pure corrugated ZnO nanorod array of (1). Wherein the curve 1 is an X-ray diffraction pattern of ITO/ZnO/PTB7: PCBM, and the curve 2 is ITO/ZnO: Bi2OS2(PTB 7X-ray diffraction pattern of PCBM; from FIG. 2, it can be seen that the active layer of pure corrugated zinc oxide nanorods and the deposited 1% Bi2OS2The active layers of the corrugated zinc oxide nano-rods have a peak at 21.6 degrees, and the Bi2OS2After deposition, the intensity of this peak increases significantly. This indicates that Bi is deposited2OS2The crystallinity of the active layer can be effectively improved later, and the short-circuit current density can be improved.
FIG. 3 shows the organic solar cell obtained in this example and the undeposited Bi2OS2The current density and voltage relation curve chart of the organic solar cell using the pure corrugated ZnO nanorod array as the electron transport layer is used for comparison. Wherein Curve 1 shows undeposited Bi2OS2The organic solar cell (structure: ITO/ZnO/PTB7: PCBM/MoO)3Ag) and curve 2 shows the electron transport layer of this example is deposited Bi2OS2Organic solar cell (structure: ITO/ZnO: Bi) of post-corrugated zinc oxide nanorod2OS2/PTB7:PCBM/MoO3Current density versus voltage curve of/Ag); it can be seen from FIG. 3 that Bi is not deposited2OS2The organic solar cell has an open-circuit voltage (Voc) of 0.71V and a short-circuit current density (Jsc) of 12.31mA/cm2(ii) a While this example deposits Bi2OS2The organic solar cell has an open-circuit voltage (Voc) of 0.75V and a short-circuit current density (Jsc) of 14.56mA/cm2. This indicates that Bi is deposited2OS2Effective improvement of charge separation and broadeningLight absorption range, thereby increasing short circuit current density; meanwhile, the ZnO surface defect is improved, and the open-circuit voltage of the device is increased. This example deposits Bi2OS2Organic solar cell and undeposited Bi2OS2The comparison of the photoelectric properties of the organic solar cell is shown in table 1.
TABLE 1
From Table 1, it can be found that Bi is not deposited in comparison with Bi not deposited2OS2The short-circuit current density (Jsc) of this example was from 12.31mA/cm2Is increased to 14.56mA/cm2The Fill Factor (FF) increased from 59.66% to 64.12%, indicating that Bi was deposited2OS2The light absorption capacity, exciton separation efficiency and carrier mobility of the organic solar cell are effectively improved, so that the photoelectric conversion efficiency of the solar cell is remarkably improved from 5.21% to 7.00%.
Example 2
A Bi of this example2OS2A deposited corrugated ZnO nano-rod array and an organic solar cell prepared by the same. The preparation method comprises the following specific steps:
(1) sequentially ultrasonically cleaning the ITO substrate for 10 minutes by using liquid detergent, deionized water, titanium tetrachloride aqueous solution, acetone, absolute ethyl alcohol and isopropanol; then drying in a vacuum drying oven at 80 ℃. And carrying out plasma surface treatment on the surface of the cleaned and dried ITO substrate for 10 minutes, cleaning residual organic matters on the surface of the ITO substrate and improving the work function of the ITO substrate.
(2) Spin-coating a corrugated ZnO seed crystal layer on the ITO surface treated in the step (1), wherein the seed crystal layer is 15-25nm corrugated ZnO particles, and the specific steps are as follows: reacting Zn (COOH)2The ethanol solution is coated on the surface of the cathode ITO substrate treated in the step (1) in a spinning mode, the revolution is 3500rpm, and the time is 40 s; annealing the cathode ITO substrate after spin coating, raising the temperature to 280 ℃ at the room temperature at the speed of 10 ℃/min, and treating for 1 hour at the constant temperature of 280 ℃ to prepare the cathode ITO substrateAnd forming a corrugated ZnO seed crystal layer with the thickness of 15-25 nm.
(3) Growing ZnO nanorods on the corrugated ZnO seed crystal layer treated in the step (2) and depositing Bi2OS2The method comprises the following specific steps: zn (NO) is firstly added3)2·6H2Dissolving O and hexamethylenetetramine in 200ml of deionized water to form a growth solution, and horizontally soaking the ITO substrate with the corrugated ZnO seed crystal layer grown in the step (2) in the growth solution at 90 ℃ for growth for 50 min. Taking out, washing off unadhered nanorods by using deionized water, and drying in an oven, wherein ZnO nanorods with the length of 50-200nm are loaded on the substrate. Then 20mg of Bi2OS2Grinding and dispersing the powder in 1ml of deionized water, ultrasonically dispersing the mixed solution, and filtering the mixture by using a 0.22 mu m organic filter head to prepare 2 wt.% Bi2OS2A solution; 2% of Bi2OS2Dripping the solution on the dried corrugated ZnO nano-rod, depositing for 30s, washing with absolute ethyl alcohol, and drying in an oven to obtain Bi2OS2And the deposited corrugated ZnO nanorod array is used as an electron transport layer.
(4) Spin coating an active layer solution on the surface of the electron transport layer at the rotation speed of 1000rpm for 40 s; the active layer is formed by blending PTB7 and PCBM, and the thickness of the active layer is about 150-200 nm; and after the active layer is spin-coated, placing the active layer in vacuum for 2-3 hours.
(5) Evaporating a hole transport layer MoO on the surface of the active layer3The thickness is 5-10 nm.
(6) Silver as an anode layer was deposited on the surface of the hole transport layer to a thickness of 85 to 95nm, thereby obtaining an organic solar cell of this example.
Example 3
A Bi of this example2OS2A deposited corrugated ZnO nano-rod array and an organic solar cell prepared by the same. The preparation method comprises the following specific steps:
(1) sequentially ultrasonically cleaning the ITO substrate for 10 minutes by using liquid detergent, deionized water, titanium tetrachloride aqueous solution, acetone, absolute ethyl alcohol and isopropanol; then drying in a vacuum drying oven at 80 ℃. And carrying out plasma surface treatment on the surface of the cleaned and dried ITO substrate for 10 minutes, cleaning residual organic matters on the surface of the ITO substrate and improving the work function of the ITO substrate.
(2) Spin-coating a corrugated ZnO seed crystal layer on the ITO surface treated in the step (1), wherein the seed crystal layer is 15-25nm corrugated ZnO particles, and the specific steps are as follows: reacting Zn (COOH)2The ethanol solution is coated on the surface of the cathode ITO substrate treated in the step (1) in a spinning mode, the revolution is 3500rpm, and the time is 40 s; and annealing the cathode ITO substrate which is subjected to spin coating, raising the temperature to 280 ℃ at the room temperature at the speed of 10 ℃/min, and treating for 1 hour at the constant temperature of 280 ℃ to prepare the corrugated ZnO seed crystal layer with the thickness of 15-25 nm.
(3) Growing ZnO nanorods on the corrugated ZnO seed crystal layer treated in the step (2) and depositing Bi2OS2The method comprises the following specific steps: zn (NO) is firstly added3)2·6H2Dissolving O and hexamethylenetetramine in 200ml of deionized water to form a growth solution, and horizontally soaking the ITO substrate with the corrugated ZnO seed crystal layer grown in the step (2) in the growth solution at 90 ℃ for growth for 50 min. Taking out, washing off unadhered nanorods by using deionized water, and drying in an oven, wherein ZnO nanorods with the length of 50-200nm are loaded on the substrate. Then 30mg of Bi2OS2Grinding and dispersing the powder in 1ml of deionized water, ultrasonically dispersing the mixed solution, and filtering the mixture by using a 0.22 mu m organic filter head to prepare 3 wt.% Bi2OS2A solution; mixing 3% of Bi2OS2Dripping the solution on the dried corrugated ZnO nano-rod, depositing for 30s, washing with absolute ethyl alcohol, and drying in an oven to obtain Bi2OS2And the deposited corrugated ZnO nanorod array is used as an electron transport layer.
(4) Spin coating an active layer solution on the surface of the electron transport layer at the rotation speed of 1000rpm for 40 s; the active layer is formed by blending PTB7 and PCBM, and the thickness of the active layer is about 150-200 nm; and after the active layer is spin-coated, placing the active layer in vacuum for 2-3 hours.
(5) Evaporating a hole transport layer MoO on the surface of the active layer3The thickness is 5-10 nm.
(6) Silver as an anode layer was deposited on the surface of the hole transport layer to a thickness of 85 to 95nm, thereby obtaining an organic solar cell of this example.
Example 4
A Bi of this example2OS2A deposited corrugated ZnO nano-rod array and an organic solar cell prepared by the same. The preparation method comprises the following specific steps:
(1) sequentially ultrasonically cleaning the ITO substrate for 10 minutes by using liquid detergent, deionized water, titanium tetrachloride aqueous solution, acetone, absolute ethyl alcohol and isopropanol; then drying in a vacuum drying oven at 80 ℃. And carrying out plasma surface treatment on the surface of the cleaned and dried ITO substrate for 10 minutes, cleaning residual organic matters on the surface of the ITO substrate and improving the work function of the ITO substrate.
(2) Spin-coating a corrugated ZnO seed crystal layer on the ITO surface treated in the step (1), wherein the seed crystal layer is 15-25nm corrugated ZnO particles, and the specific steps are as follows: reacting Zn (COOH)2The ethanol solution is coated on the surface of the cathode ITO substrate treated in the step (1) in a spinning mode, the revolution is 3500rpm, and the time is 40 s; and annealing the cathode ITO substrate which is subjected to spin coating, raising the temperature to 280 ℃ at the room temperature at the speed of 10 ℃/min, and treating for 1 hour at the constant temperature of 280 ℃ to prepare the corrugated ZnO seed crystal layer with the thickness of 15-25 nm.
(3) Growing ZnO nanorods on the corrugated ZnO seed crystal layer treated in the step (2) and depositing Bi2OS2The method comprises the following specific steps: zn (NO) is firstly added3)2·6H2Dissolving O and hexamethylenetetramine in 200ml of deionized water to form a growth solution, and horizontally soaking the ITO substrate with the corrugated ZnO seed crystal layer grown in the step (2) in the growth solution at 90 ℃ for growth for 50 min. Taking out, washing off unadhered nanorods by using deionized water, and drying in an oven, wherein ZnO nanorods with the length of 50-200nm are loaded on the substrate. Then 50mg Bi2OS2Grinding and dispersing the powder in 1ml of deionized water, ultrasonically dispersing the mixed solution, and filtering the mixture by using a 0.22 mu m organic filter head to prepare 5 wt.% Bi2OS2A solution; adding 5% of Bi2OS2The solution is dripped on the dried corrugated ZnO nano-rod and deposited for 30sAbsolute ethyl alcohol is cleaned and then put into an oven for drying to obtain Bi2OS2And the deposited corrugated ZnO nanorod array is used as an electron transport layer.
(4) Spin coating an active layer solution on the surface of the electron transport layer at the rotation speed of 1000rpm for 40 s; the active layer is formed by blending PTB7 and PCBM, and the thickness of the active layer is about 150-200 nm; and after the active layer is spin-coated, placing the active layer in vacuum for 2-3 hours.
(5) Evaporating a hole transport layer MoO on the surface of the active layer3The thickness is 5-10 nm.
(6) Silver as an anode layer was deposited on the surface of the hole transport layer to a thickness of 85 to 95nm, thereby obtaining an organic solar cell of this example.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.
Claims (10)
1. Bi2OS2The preparation method of the deposited corrugated ZnO nanorod array is characterized by comprising the following preparation steps:
(1) reacting Zn (COOH)2The ethanol solution is coated on the surface of an ITO substrate in a spinning mode, then the temperature is increased to 200-300 ℃, and annealing treatment is carried out, so that a corrugated ZnO seed crystal layer is obtained;
(2) adding Zn (NO)3)2·6H2Dissolving O and hexamethylenetetramine in water to form a growth solution, horizontally immersing the ITO substrate containing the corrugated ZnO seed crystal layer obtained in the step (1) into the growth solution, growing nanorods at the temperature of 85-95 ℃, taking out, cleaning and drying to obtain the ITO substrate loaded with a ZnO nanorod array;
(3) adding Bi2OS2Grinding the powder and ultrasonically dispersing the powder in water to obtain Bi2OS2Dispersing and then adding Bi2OS2Dropwise adding the dispersed solution onto the ZnO nanorod array obtained in the step (2) for deposition, washing with absolute ethyl alcohol,drying to obtain Bi2OS2And (4) depositing a corrugated ZnO nanorod array.
2. The Bi of claim 12OS2The preparation method of the deposited corrugated ZnO nanorod array is characterized by comprising the following steps of: the temperature rise rate in the step (1) is 5-10 ℃/min.
3. The Bi of claim 12OS2The preparation method of the deposited corrugated ZnO nanorod array is characterized by comprising the following steps of: the thickness of the corrugated ZnO seed crystal layer in the step (1) is 15-25 nm.
4. The Bi of claim 12OS2The preparation method of the deposited corrugated ZnO nanorod array is characterized by comprising the following steps of: the time for growing the nano-rods in the step (2) is 45-60 min.
5. The Bi of claim 12OS2The preparation method of the deposited corrugated ZnO nanorod array is characterized by comprising the following steps of: the ZnO nanorod in the step (2) has a length of 50-200 nm.
6. The Bi of claim 12OS2The preparation method of the deposited corrugated ZnO nanorod array is characterized by comprising the following steps of: bi described in step (3)2OS2The mass concentration of the dispersion is 1-5%, and the particle size is 10-100 nm; the deposition time is 20-40 s.
7. Bi2OS2The deposited corrugated ZnO nanorod array is characterized in that: prepared by the method of any one of claims 1 to 6.
8. The Bi of claim 72OS2The deposited corrugated ZnO nanorod array is used as an electron transport layer in an organic solar cell.
9. The Bi according to claim 82OS2The deposited corrugated ZnO nanorod array is used as an electron transport layer in an organic solar cell, and is characterized in that: the organic solar cell comprises a cathode substrate, an electron transport layer, an active layer, a hole transport layer and an anode layer, wherein the electron transport layer is made of Bi2OS2And (4) depositing a corrugated ZnO nanorod array.
10. The Bi of claim 92OS2The deposited corrugated ZnO nanorod array is used as an electron transport layer in an organic solar cell, and is characterized in that: the cathode substrate is selected from ITO, the active layer is made of PTB7: PCBM, the thickness is 150-200nm, and the hole transport layer is made of MoO3The thickness of the anode layer is 5-10nm, the material of the anode layer is silver, and the thickness of the anode layer is 85-95 nm.
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Enhanced ultraviolet photosensing properties in Bi2S3 nanoparticles decorated ZnO nanorods" heterostructure;Ayon Das Mahapatra等;《Journal of Alloys and Compounds》;20190515;766-774 * |
SILAR coated Bi2S3 nanoparticles on vertically aligned ZnO nanorods: Synthesis and characterizations;Pratibha R.Nikam等;《Ceramics International》;20150402;10394–10399 * |
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