CN110194449A - A method of graphene is prepared using graphene quantum dot mechanical stripping - Google Patents
A method of graphene is prepared using graphene quantum dot mechanical stripping Download PDFInfo
- Publication number
- CN110194449A CN110194449A CN201910393605.4A CN201910393605A CN110194449A CN 110194449 A CN110194449 A CN 110194449A CN 201910393605 A CN201910393605 A CN 201910393605A CN 110194449 A CN110194449 A CN 110194449A
- Authority
- CN
- China
- Prior art keywords
- graphene
- raw material
- quantum dot
- solution
- mechanical stripping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/19—Preparation by exfoliation
Abstract
The invention discloses a kind of methods for preparing graphene using graphene quantum dot mechanical stripping, the following steps are included: graphene raw material is taken to be slowly added in 30% sodium bicarbonate solution, after stirring 1h -2h, graphene raw material is taken out and is cleaned using clear water, it is polished using edges and corners of the grinding device to graphene raw material, the graphene particles after polishing are collected simultaneously, the beneficial effects of the present invention are: the invention is a kind of method for preparing graphene using graphene quantum dot mechanical stripping, it is lower to solve controllability in the prior art, it is difficult to realize the problem of synthesizing on a large scale, using the new process to graphene oxide solution temperature test, and original graphene raw material is polished, again resulting particle is used to test, save raw material, improve product yield and production efficiency, substantially increase production capacity, Reduce costs, can mass production, benefit is evident.
Description
Technical field
The present invention relates to a kind of difenoconazole purifying techniques, specially a kind of to utilize graphene quantum dot mechanical stripping system
The method of standby graphene.
Background technique
Graphene have excellent optics, electricity, mechanical characteristic, materialogy, micro-nano technology, the energy, biomedicine and
Drug delivery etc. is with important application prospects, it is considered to be a kind of future revolutionary material.Mechanical stripping method is benefit
With the friction and relative motion between object and graphene, the method for obtaining graphene layer material.This method is easy to operate,
Obtained graphene generally remains complete crystal structure.2004, two scientifical use adhesive tapes of Britain were to natural stone
Ink carries out the method that removing obtains graphene layer by layer, is also classified as mechanical stripping method.
It is low that original this method had once been considered production efficiency, can not industrial volume production.Although this method can be prepared
The graphene of micron size, but its controllability is lower, it is difficult to realize extensive synthesis, while resulting graphene can generate greatly
The waste of amount.
Summary of the invention
The purpose of the present invention is to provide a kind of methods for preparing graphene using graphene quantum dot mechanical stripping, with solution
Certainly the problems mentioned above in the background art.
The purpose of the present invention is be achieved by following technical proposals: a kind of to utilize graphene quantum dot mechanical stripping system
The method of standby graphene, comprising the following steps:
1) it takes graphene raw material to be slowly added in 30% sodium bicarbonate solution, after stirring 1h -2h, graphene raw material is taken out and is used
Clear water is cleaned, and is polished using edges and corners of the grinding device to graphene raw material, while to the graphene after polishing
Grain is collected.
2) the graphene particles 10g after taking step 1) to polish is placed in 5% ammonium hydroxide, forms it into the oxygen of 0.25g/L ~ 1g/L
Graphite alkene solution, while putting it into high-voltaghe compartment, reuses ultrasonic wave and is separated, and high-voltaghe compartment be warming up to 100 DEG C with
On, and internal air pressure keeps its constant by adjusting, and keeps 0.5h, then again carries out graphene solution placement 1h -1.5h cold
But, the extrudate and record in its solution are observed at different temperature.
3) take the temperature recorded in step 2 by calculating the high temperature production of selection yield, by the graphite after polishing
Alkene raw material is decomposed using press machine, then it is uniformly layered on parcel shelf, is carried out in the environment of 100 DEG C -110 DEG C
Then heating is cooled to room temperature and stands 0.5h, then heated in the environment of being warming up to 120 DEG C -130 DEG C, then internally lead to
Enter HCL gas, stand 1h and be discharged, is finally down to normal temperature and pressure again, it will be resulting swollen using filter and resonance device
Change product separation.
4) it takes step 3) to obtain resulting extruding product 10kg and alcoholic solution 2kg mixing, fills it using agitating device
Divide mixing, then cool to -5 DEG C~0 DEG C, stand 1.5h, then extra alcoholic solution is discharged by filter, up to solid
Body is precipitated, then is passed through clear water into solid and reaches room temperature, solid is successively washed and dried acquisition finished product.
HCL gas concentration in the step 3) is 45%, and HCL gas can also be used ammonia to be replaced.
The beneficial effects of the present invention are: the invention is a kind of side for preparing graphene using graphene quantum dot mechanical stripping
It is lower to solve controllability in the prior art for method, it is difficult to the problem of realizing extensive synthesis, using to graphene oxide solution temperature
The new process of test is spent, and original graphene raw material is polished, then resulting particle is used to test, raw material is saved, mentions
High product yield and production efficiency, substantially increase production capacity, reduce costs, can mass production, benefit is evident.
Specific embodiment
Further instruction With reference to embodiment, but following detailed description should not be done and be managed
Solution is the limitation invented ontology.Those of ordinary skill in the art can apparently make various on the basis of the present invention
Change and change, it should within the scope of invention.
Embodiment 1:
A method of graphene is prepared using graphene quantum dot mechanical stripping, comprising the following steps:
1) it takes graphene raw material to be slowly added in 30% sodium bicarbonate solution, after stirring 1h -2h, graphene raw material is taken out and is used
Clear water is cleaned, and is polished using edges and corners of the grinding device to graphene raw material, while to the graphene after polishing
Grain is collected.
2) the graphene particles 10g after taking step 1) to polish is placed in 5% ammonium hydroxide, forms it into the oxygen of 0.25g/L ~ 1g/L
Graphite alkene solution, while putting it into high-voltaghe compartment, reuses ultrasonic wave and is separated, and high-voltaghe compartment be warming up to 100 DEG C with
On, and internal air pressure keeps its constant by adjusting, and keeps 0.5h, then again carries out graphene solution placement 1h -1.5h cold
But, the extrudate and record in its solution are observed at different temperature.
3) take the temperature recorded in step 2 by calculating the high temperature production of selection yield, by the graphite after polishing
Alkene raw material is decomposed using press machine, then it is uniformly layered on parcel shelf, is carried out in the environment of 100 DEG C -110 DEG C
Then heating is cooled to room temperature and stands 0.5h, then heated in the environment of being warming up to 120 DEG C -130 DEG C, then internally lead to
Enter HCL gas, stand 1h and be discharged, is finally down to normal temperature and pressure again, it will be resulting swollen using filter and resonance device
Change product separation.
4) it takes step 3) to obtain resulting extruding product 10kg and alcoholic solution 2kg mixing, fills it using agitating device
Divide mixing, then cool to -5 DEG C~0 DEG C, stand 1.5h, then extra alcoholic solution is discharged by filter, up to solid
Body is precipitated, then is passed through clear water into solid and reaches room temperature, solid is successively washed and dried acquisition finished product.
HCL gas concentration in the step 3) is 45%, and HCL gas can also be used ammonia to be replaced.
Embodiment 2:
A method of graphene is prepared using graphene quantum dot mechanical stripping, comprising the following steps:
1) it takes graphene raw material to be slowly added in 50% sodium bicarbonate solution, after stirring 1h -1.5h, graphene raw material taking-up is made
It is cleaned, is polished using edges and corners of the grinding device to graphene raw material, while to the graphene after polishing with clear water
Particle is collected.
2) the graphene particles 20g after taking step 1) to polish is placed in 10% ammonium hydroxide, forms it into the oxygen of 0.25g/L ~ 1g/L
Graphite alkene solution, while putting it into high-voltaghe compartment, reuses ultrasonic wave and is separated, and high-voltaghe compartment be warming up to 100 DEG C with
On, and internal air pressure keeps its constant by adjusting, and keeps 0.5h, then again carries out graphene solution placement 1h -1.5h cold
But, the extrudate and record in its solution are observed at different temperature.
3) take the temperature recorded in step 2 by calculating the high temperature production of selection yield, by the graphite after polishing
Alkene raw material is decomposed using press machine, then it is uniformly layered on parcel shelf, is carried out in the environment of 130 DEG C -140 DEG C
Then heating is cooled to room temperature and stands 0.5h, then heated in the environment of being warming up to 140 DEG C -150 DEG C, then internally lead to
Enter HCL gas, stand 1h and be discharged, is finally down to normal temperature and pressure again, it will be resulting swollen using filter and resonance device
Change product separation.
4) it takes step 3) to obtain resulting extruding product 20kg and alcoholic solution 4kg mixing, fills it using agitating device
Divide mixing, then cool to -5 DEG C~0 DEG C, stand 1.5h, then extra alcoholic solution is discharged by filter, up to solid
Body is precipitated, then is passed through clear water into solid and reaches room temperature, solid is successively washed and dried acquisition finished product.
HCL gas concentration in the step 3) is 35%, and HCL gas can also be used ammonia to be replaced.
Above description is only the preferred embodiment of the application and the explanation to institute's application technology principle.Those skilled in the art
Member is it should be appreciated that invention scope involved in the application, however it is not limited to technology made of the specific combination of above-mentioned technical characteristic
Scheme, while should also cover in the case where not departing from the inventive concept, it is carried out by above-mentioned technical characteristic or its equivalent feature
Any combination and the other technical solutions formed.Such as features described above has similar function with (but being not limited to) disclosed herein
Can technical characteristic replaced mutually and the technical solution that is formed.
Claims (2)
1. a kind of method for preparing graphene using graphene quantum dot mechanical stripping, which comprises the following steps:
1) it takes graphene raw material to be slowly added in 30% sodium bicarbonate solution, after stirring 1h -2h, graphene raw material is taken out and is used
Clear water is cleaned, and is polished using edges and corners of the grinding device to graphene raw material, while to the graphene after polishing
Grain is collected；
2) the graphene particles 10g after taking step 1) to polish is placed in 5% ammonium hydroxide, forms it into the oxidation stone of 0.25g/L ~ 1g/L
Black alkene solution, while putting it into high-voltaghe compartment, reuses ultrasonic wave and is separated, and high-voltaghe compartment is warming up to 100 DEG C or more, and
Internal air pressure keeps its constant by adjusting, and keeps 0.5h, then again cools down graphene solution placement 1h -1.5h,
The extrudate and record in its solution are observed at a temperature of different；
3) take the temperature recorded in step 2 by calculating the high temperature production of selection yield, the graphene after polishing is former
Material is decomposed using press machine, then it is uniformly layered on parcel shelf, is heated in the environment of 100 DEG C -110 DEG C,
Then it is cooled to room temperature and stands 0.5h, then heated in the environment of being warming up to 120 DEG C -130 DEG C, be then internally passed through HCL
Gas stands 1h and is simultaneously discharged, is finally down to normal temperature and pressure again, using filter and resonance device by resulting extruding product
Separation；
4) it takes step 3) to obtain resulting extruding product 10kg and alcoholic solution 2kg mixing, keeps it sufficiently mixed using agitating device
It closes, then cools to -5 DEG C~0 DEG C, stand 1.5h, then extra alcoholic solution is discharged by filter, until solid is analysed
Out, then into solid it is passed through clear water and reaches room temperature, solid is successively washed and dried acquisition finished product.
2. a kind of method for preparing graphene using graphene quantum dot mechanical stripping as described in claim 1, feature exist
In the HCL gas concentration in the step 3) is 45%, and HCL gas can also be used ammonia to be replaced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910393605.4A CN110194449A (en) | 2019-05-13 | 2019-05-13 | A method of graphene is prepared using graphene quantum dot mechanical stripping |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910393605.4A CN110194449A (en) | 2019-05-13 | 2019-05-13 | A method of graphene is prepared using graphene quantum dot mechanical stripping |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110194449A true CN110194449A (en) | 2019-09-03 |
Family
ID=67752639
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910393605.4A Pending CN110194449A (en) | 2019-05-13 | 2019-05-13 | A method of graphene is prepared using graphene quantum dot mechanical stripping |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110194449A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103935999A (en) * | 2014-05-09 | 2014-07-23 | 中国科学院上海微系统与信息技术研究所 | Preparation method of graphene |
| CN103950928A (en) * | 2014-05-22 | 2014-07-30 | 苏州斯迪克新材料科技股份有限公司 | Preparation method of graphene |
| CN105399090A (en) * | 2015-12-22 | 2016-03-16 | 成都新柯力化工科技有限公司 | Graphene preparation method by using graphene quantum point mechanical stripping |
| CN105439133A (en) * | 2015-12-18 | 2016-03-30 | 浙江理工大学 | Preparation method of electronegative monolayer graphene |
| WO2016045023A1 (en) * | 2014-09-25 | 2016-03-31 | 深圳粤网节能技术服务有限公司 | Method for grading and separating graphene material |
| US20160200581A1 (en) * | 2013-08-21 | 2016-07-14 | Hanwha Chemical Corporation | Graphene, method and apparatus for preparing graphene |
-
2019
- 2019-05-13 CN CN201910393605.4A patent/CN110194449A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160200581A1 (en) * | 2013-08-21 | 2016-07-14 | Hanwha Chemical Corporation | Graphene, method and apparatus for preparing graphene |
| CN103935999A (en) * | 2014-05-09 | 2014-07-23 | 中国科学院上海微系统与信息技术研究所 | Preparation method of graphene |
| CN103950928A (en) * | 2014-05-22 | 2014-07-30 | 苏州斯迪克新材料科技股份有限公司 | Preparation method of graphene |
| WO2016045023A1 (en) * | 2014-09-25 | 2016-03-31 | 深圳粤网节能技术服务有限公司 | Method for grading and separating graphene material |
| CN105439133A (en) * | 2015-12-18 | 2016-03-30 | 浙江理工大学 | Preparation method of electronegative monolayer graphene |
| CN105399090A (en) * | 2015-12-22 | 2016-03-16 | 成都新柯力化工科技有限公司 | Graphene preparation method by using graphene quantum point mechanical stripping |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103359736B (en) | A kind of method from crystalline silicon cutting waste mortar synthesis silicon carbide powder | |
| TWI525041B (en) | Synthetic amorphous silica powder and method for producing the same | |
| WO2012083678A1 (en) | Method for preparing high-purity lithium carbonate | |
| CN103153870A (en) | Preparation method and use of manganese dioxide nano-rod | |
| CN105752972A (en) | Method for preparing graphene material from inorganic laminates through high-pressure draft stripping | |
| CN103553030A (en) | Preparation method of few-layer graphene | |
| CN103803664B (en) | A kind of preparation method of tricobalt tetroxide band core nano-hollow ball | |
| CN106882798A (en) | The preparation technology of Graphene, carbon nano tube compound material | |
| CN110194449A (en) | A method of graphene is prepared using graphene quantum dot mechanical stripping | |
| CN104449400B (en) | Corn shape nano lanthanum oxide cerium/Graphene compound rare-earth polishing powder and preparation method | |
| CN107265462A (en) | A kind of method that nano-silicon is prepared by silicon tetrahalogen | |
| CN102652110A (en) | Synthetic amorphous silica powder and method for producing same | |
| CN108899429A (en) | A kind of preparation method of graphene-based organic solar batteries boundary material | |
| CN109148868A (en) | Sheet silicon grain for cathode of lithium battery | |
| CN106238080B (en) | The method of p-doped porous graphene and preparation method thereof and catalysis benzylamine oxidation | |
| CN206352051U (en) | A kind of closed continuous complexes for preparing grapheme material | |
| CN105155039A (en) | Preparation method for Ti4O7 nanometer fiber | |
| CN108217725A (en) | A kind of hydrated basic pyrovanadic acid zinc（Zn3V2O7(OH)2·2H2O）The preparation method and application of material | |
| CN106058234B (en) | A kind of TiO of classifying porous nucleocapsid2Sphere material and its preparation method and application | |
| CN104402450A (en) | Method for quickly preparing Ti2AlN ceramic powder on the basis of thermal explosion reaction at low temperature | |
| CN208722989U (en) | A kind of silicon carbide particles for cathode of lithium battery | |
| CN104108739A (en) | Preparation method of particle size-controllable spherical copper oxide | |
| CN203509048U (en) | Titanium powder production device capable of recycling and reusing hydrogen | |
| CN103193254B (en) | Novel technology for simultaneously preparing rodlike and sheetlike nano-sized magnesium hydroxide | |
| CN101856725A (en) | Method for preparing superfine nickel powder by direct reduction |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190903 |