CN110190185A - A kind of flexible device and preparation method thereof for being with memristor characteristic and row of diodes - Google Patents
A kind of flexible device and preparation method thereof for being with memristor characteristic and row of diodes Download PDFInfo
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- CN110190185A CN110190185A CN201910500434.0A CN201910500434A CN110190185A CN 110190185 A CN110190185 A CN 110190185A CN 201910500434 A CN201910500434 A CN 201910500434A CN 110190185 A CN110190185 A CN 110190185A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of the switching material, e.g. layer deposition
- H10N70/026—Formation of the switching material, e.g. layer deposition by physical vapor deposition, e.g. sputtering
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- H—ELECTRICITY
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- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
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Abstract
The flexible device and preparation method thereof that the present invention provides a kind of with memristor characteristic and row of diodes is, device successively include using substrate, lower electrode, dielectric layer and top electrode made of flexible material.Production method are as follows: S1, choose flexible material as substrate；S2, it substrate is passed sequentially through to deionized water, ethyl alcohol, acetone, ethyl alcohol, deionized water cleans up；S3, in substrate laterally 10%~90% area deposition Titanium be used as under electrode；S4, the region that lower electrode longitudinal 0%~30% is blocked using mold；S5, radio frequency sputtering deposition LiCoO is utilized in unsheltered lower electrode surface2As dielectric layer；S6, dielectric layer is covered with the mask plate with grid, metallic silver, titanium or copper is deposited on the dielectric layer by grid.The present invention prepares flexible device using the method for magnetron sputtering, can be realized memristor characteristic and row of diodes is, in circuit board effect coexists with realize diode and memory in the diode and memory application that can be used to replace equal-wattage.
Description
Technical field
The invention belongs to thin-film device technical field, in particular to a kind of flexibility for being with memristor characteristic and row of diodes
Device and preparation method thereof.
Background technique
Compared with existing electronic device, electronic device flexible have device architecture it is simple, it is easy to process, manufacture at
The particular advantages such as this is low, mechanical flexibility is high, versatile, material controllability is good, flexible electronic technology are to realize foldable, bendable
The emerging equipment such as bent, scalable and wearable device provides chance, causes extensive pass in field of electronic devices in recent years
Note.Memory device is one of the chief component of most of electronic devices, therefore, with reliable electric property and stabilization
Flexible substrate on prepare the research of memory device extensive attention have been obtained.
Memory used at present can be divided into two classes, the i.e. random access memory and nonvolatile memory of volatibility.Before
Person's major product has dynamic random access memory and Static RAM, and data rate memory is fast, but after terminating power supply,
The information stored will disappear quickly, therefore the information of volatile memory storage needs constantly to refresh.The latter mainly has ROM
(read-only memory), PROM (programmable storage), EEPROM (electricity erasable memorizer), Flash (flash memory) etc., they are deposited
Storage speed is relatively slow, but still is able to the characteristic for continuing to keep storing data after having power-off, has been widely used for being permitted
In more miniaturized electronics, wherein Flash has become presently the most mature nonvolatile memory.
Since the concept for proposing memristor memory, memristor random access memory has become electronic technology, physics, material
Material is learned, the research hotspot of physical chemistry and information technology field.Memristor should have the structure there are two electrode and dielectric material.It is situated between
Conductive mechanism in electric layer film mainly includes Schottkey Injection, space charge limitation conduction, ohmic conduction, Poole-
The models such as Frenkele transmitting, thermal field emission, Fowler-Nordheim tunnelling, direct tunnelling, jump conduction and ionic conduction.
These conduction models study the charge-conduction in memristor with good theoretical foundation for us, possess our research
Solid foundation.The dielectric layer material for preparing memristor is mainly semiconductor, such as ZnO, TiO2, ZrO2, NiO, BiFeO3,
SrTiO3, Fe2O3 etc. and some organic semiconducting materials, since semiconductor material obtains hardly possible, price is high, is not easily recycled, can
Sustainable utilization rate is low, and some semiconductor material has toxicity, has negative effect to environment and human body.Dielectric layer material
Material widely grind from insulator, transition metal oxide, high molecular material, semiconductor material and biomaterial etc.
Study carefully and explores.We attempt to prepare memristor using LiCoO2 in the invention, can be with because of its good chemical property
Utilize the Co and Li in chemical precipitation method recycling LiCoO2.Therefore, there is actual answer using the memory resistor of LiCoO2 preparation
It will be significantly in the long run with prospect.In the application of multifunction electronic device, a variety of physics of simultaneous display are special
The electronic device of property has great importance.In this work, the flexible device of Ag/LiCoO2/Ti/PET structure is to pass through
Prepared by the method for magnetron sputtering, different performances has been shown under different test conditions.About material memristor characteristic and
Row of diodes be all be absorbing physical phenomenon.For the flexible device for the Ag/LiCoO2/Ti/PET structure that we prepare
The row of diodes of appearance is that it is mainly metal-semiconductor (contact), it is a kind of hot carrier diode.
Research memristor characteristic and row of diodes are of great significance for device, are expected to develop novel and multifunctional electricity in the future
Sub- device, to realize that the electronic device of superior performance provides new approach.
Summary of the invention
It is an object of the invention to overcome the deficiencies of the prior art and provide a kind of methods using magnetron sputtering to prepare flexibility
Device, can be realized memristor characteristic and row of diodes is, can be used to replace equal-wattage diode and memory application in
Effect coexists with realize diode and memory in circuit board, and the further integrated level for improving circuit board has memristor characteristic
The flexible device and preparation method thereof for being with row of diodes.
The purpose of the present invention is achieved through the following technical solutions: a kind of with memristor characteristic and row of diodes
Flexible device successively includes using substrate, lower electrode, dielectric layer and top electrode made of flexible material.
Further, the substrate uses flexibility PET, PVA, PI or PEN；The lower electrode uses Titanium, lower electrode
In substrate on lateral 10%~90% region；The dielectric layer uses LiCoO2It is made.
Further, the top electrode is arranged in array, and top electrode uses metallic silver, titanium or copper.
The present invention also provides a kind of flexible device preparation method for being with memristor characteristic and row of diodes, including it is following
Step:
S1, flexible material is chosen as substrate；
S2, that the step S1 substrate chosen is passed sequentially through to deionized water, ethyl alcohol, acetone, ethyl alcohol, deionized water cleaning is dry
Only, spare；
S3, in the substrate cleaned up laterally 10%~90% area deposition Titanium be used as under electrode；
S4, the region that lower electrode longitudinal 0%~30% is blocked using mold, and fixed sample with high temperature gummed tape；
S5, radio frequency sputtering deposition LiCoO is utilized in unsheltered lower electrode surface2As dielectric layer；
S6, dielectric layer is covered with the mask plate with grid, metallic silver, titanium or copper is deposited on dielectric layer by grid
On, the top electrode as device.
The beneficial effects of the present invention are:
1, the present invention prepares device flexible using the method for magnetron sputtering, can be realized memristor characteristic and row of diodes
For, can be used to replace equal-wattage diode and memory application in circuit board to realize coexisting for diode and memory
Effect, the further integrated level for improving circuit board；
2, dielectric layer material LiCoO used in the present invention2Because of its good chemical property, it is heavy to can use chemistry
Shallow lake method recycles Co and Li therein, increases waste product utilization, reduces pollution of the electronic product to environment；
3, there is actual application prospect using the memory resistor of LiCoO2 preparation, is expected to novel and multifunctional to develop in the future
Electronic device, to realize that the electronic device of superior performance provides new approach.
Detailed description of the invention
Fig. 1 is the structure chart of flexible device of the present invention；
Fig. 2 is the flow chart of the flexible device preparation method for being of the invention with memristor characteristic and row of diodes；
Fig. 3 is dielectric layer material LiCoO2Crystal structure；
Fig. 4 is electric current-voltage curve (I-V curve) of the flexible device of preparation.
Specific embodiment
Technical solution of the present invention is further illustrated with reference to the accompanying drawing.
As shown in Figure 1, a kind of flexible device for being with memristor characteristic and row of diodes, successively includes using flexible material
Manufactured substrate 1, lower electrode 2, dielectric layer 3 and top electrode 4.
Further, the substrate uses flexibility PET, PVA, PI or PEN；The lower electrode 2 uses Titanium, lower electrode
2 are located in substrate 1 on laterally 10%~90% region；The dielectric layer 3 uses LiCoO2It is made.
Further, the top electrode 4 is arranged in array, and top electrode uses metallic silver, titanium or copper.
As shown in Fig. 2, a kind of flexible device preparation method for being with memristor characteristic and row of diodes provided by the invention,
The following steps are included:
S1, flexible material is chosen as substrate；
S2, that the step S1 substrate chosen is passed sequentially through to deionized water, ethyl alcohol, acetone, ethyl alcohol, deionized water cleaning is dry
Only, spare；
S3, in the substrate cleaned up laterally 10%~90% area deposition Titanium be used as under electrode；
S4, the region that lower electrode longitudinal 0%~30% is blocked using mold, and fixed sample with high temperature gummed tape；Device
It is horizontal and vertical have no stringent differentiation, select either direction as laterally, then with the laterally vertical automatic conduct of other direction
It is longitudinal.
S5, radio frequency sputtering deposition LiCoO is utilized in unsheltered lower electrode surface2As dielectric layer；
S6, dielectric layer is covered with the mask plate with grid, metallic silver, titanium or copper is deposited on dielectric layer by grid
On, the top electrode as device.
Fig. 3 is dielectric layer material LiCoO2Crystal structure figure, Li+And Co3 +It is each located in cubic closest packing alternate
Octahedral site.
Fig. 4 is electric current-voltage curve (I-V curve) of the flexible device of preparation.When electrode connects under top electrode plus positive voltage
When ground, and the voltage scan range for testing circuit is -2.0V to 2.0V, and maximum limits (I-V) figure that electric current is 10.0mA, from
This it appears that prepared memory resistor has good memristor characteristic in figure；When top electrode ground connection, and test electricity
The voltage scan range on road is that -4.0V arrives 4.0V, (I-V) figure that maximum limitation electric current is 10.0mA, and device presents significantly
Row of diodes is.By above-mentioned experiment it can be proved that structure prepared by the present invention is Ag/LiCoO2The flexible device of/Ti/PET,
It can be realized memristor characteristic and row of diodes be.
Those of ordinary skill in the art will understand that the embodiments described herein, which is to help reader, understands this hair
Bright principle, it should be understood that protection scope of the present invention is not limited to such specific embodiments and embodiments.This field
Those of ordinary skill disclosed the technical disclosures can make according to the present invention and various not depart from the other each of essence of the invention
The specific variations and combinations of kind, these variations and combinations are still within the scope of the present invention.
Claims (7)
1. a kind of flexible device for being with memristor characteristic and row of diodes, which is characterized in that successively include using flexible material
Manufactured substrate (1), lower electrode (2), dielectric layer (3) and top electrode (4).
2. a kind of flexible device for being with memristor characteristic and row of diodes according to claim 1, which is characterized in that institute
It states substrate and uses flexibility PET, PVA, PI or PEN.
3. a kind of flexible device for being with memristor characteristic and row of diodes according to claim 1, which is characterized in that institute
Lower electrode (2) are stated using Titanium, lower electrode (2) is located on substrate (1) on laterally 10%~90% region.
4. a kind of flexible device for being with memristor characteristic and row of diodes according to claim 1, which is characterized in that institute
Electric layer (3) are given an account of using LiCoO2It is made.
5. a kind of flexible device for being with memristor characteristic and row of diodes according to claim 1, which is characterized in that institute
Top electrode (4) is stated to be arranged in array.
6. a kind of flexible device preparation method for being with memristor characteristic and row of diodes according to claims 1,
It is characterized by: the top electrode uses metallic silver, titanium or copper.
7. a kind of flexible device preparation for being with memristor characteristic and row of diodes as described in claim 1~6 any one
Method, which comprises the following steps:
S1, flexible material is chosen as substrate；
S2, it the step S1 substrate chosen is passed sequentially through into deionized water, ethyl alcohol, acetone, ethyl alcohol, deionized water cleans up, it is standby
With；
S3, in the substrate cleaned up laterally 10%~90% area deposition Titanium be used as under electrode；
S4, the region that lower electrode longitudinal 0%~30% is blocked using mold, and fixed sample with high temperature gummed tape；
S5, radio frequency sputtering deposition LiCoO is utilized in unsheltered lower electrode surface2As dielectric layer；
S6, dielectric layer is covered with the mask plate with grid, metallic silver, titanium or copper is deposited on the dielectric layer by grid,
Top electrode as device.
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| CN201910500434.0A CN110190185B (en) | 2019-06-11 | 2019-06-11 | Flexible device with memristor characteristic and diode behavior and preparation method thereof |
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| CN201910500434.0A CN110190185B (en) | 2019-06-11 | 2019-06-11 | Flexible device with memristor characteristic and diode behavior and preparation method thereof |
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| CN110190185A true CN110190185A (en) | 2019-08-30 |
| CN110190185B CN110190185B (en) | 2021-01-05 |
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Citations (5)
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|---|---|---|---|---|
| US20130277638A1 (en) * | 2010-12-17 | 2013-10-24 | Centre National De La Recherche Scientifique | Memristive Element and Electronic Memory Based on Such Elements |
| CN104756246A (en) * | 2012-11-27 | 2015-07-01 | 英特尔公司 | Low voltage embedded memory having cationic-based conductive oxide element |
| CN106992249A (en) * | 2017-02-22 | 2017-07-28 | 北京航空航天大学 | A kind of ionic memristor with quantum conductance effect |
| US20180341849A1 (en) * | 2017-05-25 | 2018-11-29 | International Business Machines Corporation | Two-terminal metastable mixed-conductor memristive devices |
| WO2018234947A1 (en) * | 2017-06-22 | 2018-12-27 | International Business Machines Corporation | Memristive device based on reversible intercalated ion transfer between two meta-stable phases |
-
2019
- 2019-06-11 CN CN201910500434.0A patent/CN110190185B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130277638A1 (en) * | 2010-12-17 | 2013-10-24 | Centre National De La Recherche Scientifique | Memristive Element and Electronic Memory Based on Such Elements |
| CN104756246A (en) * | 2012-11-27 | 2015-07-01 | 英特尔公司 | Low voltage embedded memory having cationic-based conductive oxide element |
| CN106992249A (en) * | 2017-02-22 | 2017-07-28 | 北京航空航天大学 | A kind of ionic memristor with quantum conductance effect |
| US20180341849A1 (en) * | 2017-05-25 | 2018-11-29 | International Business Machines Corporation | Two-terminal metastable mixed-conductor memristive devices |
| WO2018234947A1 (en) * | 2017-06-22 | 2018-12-27 | International Business Machines Corporation | Memristive device based on reversible intercalated ion transfer between two meta-stable phases |
Non-Patent Citations (1)
| Title |
|---|
| QI HU 等: ""Modulation of resistive switching in Pt/LiCoO2/SiO2/Si stacks"", 《JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS》 * |
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