CN110187177A - A kind of the opto-electronic device frequency response test device and method of All-in-One - Google Patents

A kind of the opto-electronic device frequency response test device and method of All-in-One Download PDF

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CN110187177A
CN110187177A CN201910406586.4A CN201910406586A CN110187177A CN 110187177 A CN110187177 A CN 110187177A CN 201910406586 A CN201910406586 A CN 201910406586A CN 110187177 A CN110187177 A CN 110187177A
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frequency
measured
frequency response
photodetector
signal
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CN110187177B (en
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邹新海
亓林
刘宇
路永乐
郭俊启
黎人溥
邸克
崔巍
文丹丹
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Chongqing University of Post and Telecommunications
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01MTESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02Testing optical properties
    • G01M11/0292Testing optical properties of objectives by measuring the optical modulation transfer function
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R23/00Arrangements for measuring frequencies; Arrangements for analysing frequency spectra
    • G01R23/16Spectrum analysis; Fourier analysis
    • G01R23/17Spectrum analysis; Fourier analysis with optical or acoustical auxiliary devices

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

The opto-electronic device frequency response test device and method of a kind of All-in-One is claimed in the present invention.The present invention is made of laser, shift frequency difference interference module, photodetector to be measured and spectrum analysis module, wherein, shift frequency difference interference module is made of electrooptic modulator to be measured with frequency shifter, and in the upper and lower arm of Mach-Zehnder for being respectively placed in intervention module, laser, shift frequency difference interference module and photodetector to be measured successively light connects, microwave signal source is to be electrically connected with the input electrode end of electrooptic modulator to be measured, and photodetector output end to be measured is to be electrically connected with spectrum analysis module;In the case that twice different output voltage driving of the microwave signal source under identical working frequency is set, pass through spectrum analysis module, obtain the power ratio of tie element, pass through the ratio of power ratio under different driving twice, realize that the frequency response to electrooptic modulator to be measured is tested, and then inverse goes out photodetector frequency response to be measured, it is final to realize the test of frequency response self calibration.

Description

A kind of the opto-electronic device frequency response test device and method of All-in-One
Technical field
The invention belongs to photoelectron technical fields, and in particular to a kind of opto-electronic device frequency response test dress of All-in-One It sets and method.
Background technique
With the arrival of 5G mobile communication, explosive growth is presented in demand of the people to traffic rate and data capacity. Currently, the fast development of optical fiber telecommunications system is the basic guarantee that the following 5G mobile communication is promoted, and as optical fiber telecommunications system Element-opto-electronic device, characterisitic parameter be determine message capacity, the key point of bandwidth and rate, meanwhile, Realize that the characterisitic parameter accurate Characterization of opto-electronic device plays to Guan Chong opto-electronic device research and development, design, production and optimization The effect wanted, therefore the research of opto-electronic device characterisitic parameter is particularly important.
The method of the test of measurement opto-electronic device frequency response at present is according to the difference of device under test type, test method Also different.Wherein, in area of light test method, the measurement of electrooptic modulator frequency response is may be implemented in spectra methods, (Y.Q.Shi,L.S.Yan,A.E.Willner,“High-speed electrooptic modulator characterization using optical spectrum analysis,”Journal of Lightwave Technology, 2003,21 (10): 2358-2367), still, point of the measurement accuracy heavy dependence spectroanalysis instrument of the program Resolution usually has that measurement frequency resolution ratio is low, precision is not high, in addition, spectra methods can not achieve photodetection The test of device frequency response;In electrical domain measurement method, frequency sweep method (Y.Q.Heng, M.Xue, W.Chen, S.L.Han, J.Q.Liu,and S.L.Pan,“Large-dynamic frequency fesponse measurement for broadband electro-optic phase modulators,”IEEE Photonics Technology Letters, 2019,31(4):291-294.D.A.Humphreys,“Integrated-optic system for high-speed photodetector bandwidth measurements,”Electronics Letters,1989,25(23):1555- 1557.) the fine test characteristic of vector network analyzer is made full use of, it can be achieved that high-precision opto-electronic device relative frequency Response test, however, it is necessary to carry out additional calibration, and process is complicated;Shift frequency heterodyne method (S.J.Zhang, C.Zhang, H.Wang,X.H.Zou,Y.L.Zhang,Y.Liu,and J.E.Bowers,“Self-calibrated microwave characterization of high-speed optoelectronic devices by heterodyne spectrum Mapping, " Journal of Lightwave Technology, 35 (10), 1952-1961.) it is the original for utilizing difference interference Reason realizes that high-precision, the response of self-alignment opto-electronic device absolute frequency are surveyed by configuring the frequency relation of two modulated signals Examination is rung however, the program needs additional auxiliary wide-band microwave source and wideband modulator for eliminating other device frequencies of system The influence answered, overhead are big.
Summary of the invention
Present invention seek to address that the above problem of the prior art.Propose a kind of All-in-One for realizing more devices, multi-parameter The opto-electronic device for the All-in-One that high-resolution, high-precision, low cost, the self calibration electrical domain of opto-electronic device characterisitic parameter measure Frequency response test device and method.Technical scheme is as follows:
A kind of opto-electronic device frequency response test device of All-in-One comprising laser, signal source, shift frequency heterodyne are dry Relate to module, photodetector to be measured and spectrum analysis module;Wherein, the shift frequency difference interference module is by electrooptic modulator to be measured It forms, and is respectively placed in the upper and lower arm of Mach-Zehnder of shift frequency difference interference module with frequency shifter;The signal source with it is to be measured The input electrode end of electrooptic modulator is electrically connected;The laser, shift frequency difference interference module, between photodetector to be measured according to Secondary light connects;It is electrically connected between the photodetector output end to be measured and spectrum analysis module, the laser is used for lasing Direct current light wave, signal source for generating sinusoidal microwave signal, shift frequency difference interference module for realizing light wave heterodyne beat, to Survey the frequency spectrum letter that detection and spectrum analysis module of the photodetector for optical signal are used to analyze photodetector output signal Breath, electrooptic modulator to be measured is for loading sinusoidal microwave signal to direct current light wave and frequency shifter for realizing direct current light wave Frequency shifts, setting signal source, by different output voltage drivings twice, pass through spectrum analysis module under identical working frequency The power ratio for obtaining tie element is realized by the ratio of power ratio under different driving twice to electrooptic modulator to be measured Frequency response test, and then inverse goes out photodetector frequency response to be measured.
Further, the electrooptic modulator to be measured be electro-optic phase modulator or electro-optic intensity modulator, for pair The phase or intensity of direct current light wave are modulated.
Further, when electrooptic modulator to be measured is electro-optic phase modulator, modulated optical signal electric field EPMIt indicates are as follows:
Wherein, A1For the amplitude of light carrier in upper arm, m is the index of modulation of electrooptic modulator to be measured, Jp() is pth rank Bessel function of the first kind, j be plural number;
The relatively fixed low frequency f of detector to be measuredsThe frequency response at place are as follows:
Wherein, J0() is the Bessel function of the first kind of the 0th rank, J1() is the Bessel function of the first kind of the 1st rank, R (fs) and R (f1±fs) it is respectively photodetector to be measured in frequency fsAnd f1±fsThe responsiveness at place.
Further, when electrooptic modulator to be measured is electro-optic intensity modulator, modulated optical signal electric field EMZMIt indicates are as follows:
In formula, φ is phase difference caused by bias voltage;
Obtain the relatively fixed low frequency f of detector to be measuredsThe frequency response at place are as follows:
A kind of opto-electronic device frequency response test method based on described device comprising following steps:
(1) it is f that signal source, which generates frequency,1It is V with amplitudesMicrowave signal, by electrooptic modulator to be measured load in light wave On, modulated signal with through frequency shifter shift frequency fsLight carrier afterwards is combined, and combining optical signal is sent into photodetector and carries out light Electricity conversion, obtains mixed frequency signal, utilizes radio-frequency component f in spectrum analysis module record mixed frequency signalsAnd f1±fsAmplitude Ration;
(2) in the case where not changing microwave signal source frequency, the amplitude for changing output microwave signal is Vs'=rVs, benefit With radio-frequency component f in spectrum analysis module record mixed frequency signalsAnd f1±fsAmplitude Ration;
(3) by the ratio of step (1), (2) Amplitude Ration twice to eliminate the frequency response of photodetector to be measured, due to two Secondary modulated signal Amplitude Ration r is it is known that acquiring the index of modulation m of electrooptic modulator to be measured;
(4) after the index of modulation for obtaining electrooptic modulator to be measured, photoelectricity to be measured is gone out by frequency content Amplitude Ration inverse and is visited Survey the responsiveness R of device;
(5) change the frequency f of microwave signal source1, and repeat the above process, obtain electrooptic modulator to be measured and photoelectricity to be measured Detector realizes the self calibration test of the opto-electronic device frequency response of All-in-One in the frequency response of different frequency.
Further, the step (1) utilizes radio-frequency component f in spectrum analysis module record mixed frequency signalsAnd f1±fs's Amplitude Ration, are as follows:
In formula, H indicates radio-frequency component f in mixed frequency signalsAnd f1±fsAmplitude Ration, M is function about m, and R is to be measured The responsiveness of photodetector.
Further, the step (2) changes output microwave signal in the case where not changing microwave signal source frequency Amplitude is Vs'=rVs, utilize radio-frequency component f in spectrum analysis module record mixed frequency signalsAnd f1±fsAmplitude Ration, are as follows:
M' is the function about r and m in formula;
Further, Amplitude Ration r ≠ 1 of the driving of microwave signal twice.
It advantages of the present invention and has the beneficial effect that:
(1) apparatus of the present invention use shift frequency difference interference structure, avoid interference structure and tremble vulnerable to caused by external environment Dynamic problem, realizes a kind of stable opto-electronic device frequency sound test structure.
(2) present invention is not in the case where removing test macro, the principle of utilization different microwave signal voltage drivings twice, By the ratio of required mixing ingredient, the frequency response of additional devices in test macro can be eliminated, while realizing Electro-optical Modulation Device and the test of the self calibration of photodetector frequency response.
(3) it only needs same test macro that can test different types of opto-electronic device frequency response, compares Current shift frequency heterodyne interferometry, self calibration test are not necessarily to additional wide-band microwave source and wideband modulator, have test structure Simple and at low cost advantage realizes the self calibration test of a kind of low cost, All-in-One.
(4) present invention utilizes the principle of shift frequency difference interference, and light wave side information heterodyne beat is mapped to high-precision It is analyzed and is detected in the electrical domain of thin analysis ability, only need to tune the sweep interval of sweep check, it can be achieved that high-resolution Opto-electronic device frequency sound test.
Detailed description of the invention
Fig. 1 is that the present invention provides a kind of opto-electronic device frequency response test device connection knot of All-in-One of preferred embodiment Composition.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, detailed Carefully describe.Described embodiment is only a part of the embodiments of the present invention.
The technical solution that the present invention solves above-mentioned technical problem is:
As shown in Figure 1, a kind of opto-electronic device frequency response test device of All-in-One, including laser, shift frequency heterodyne Intervention module, photodetector to be measured and spectrum analysis module;Wherein, shift frequency difference interference module by electrooptic modulator to be measured and Frequency shifter composition, and be respectively placed in the upper and lower arm of intervention module;Microwave signal source is electrically connected with electrooptic modulator to be measured;Swash Light device, shift frequency difference interference module, successively light connects between photodetector to be measured;Photodetector to be measured and spectrum analysis mould It is electrically connected between block;Electrooptic modulator to be measured can be electro-optic phase modulator or electro-optic intensity modulator.
The test philosophy and method of a kind of opto-electronic device frequency response of All-in-One of the invention are as follows:
It is f that laser, which issues frequency,0Light carrier enter in shift frequency difference interference module, in the light of intervention module upper arm Carrier wave enters in electrooptic modulator to be measured, sinusoidal signal v (the t)=V generated by microwave signal sourcessin2πf1T carries out electric light tune System.
(1) when electrooptic modulator to be measured is electro-optic phase modulator, modulated optical signal electric field EPMIt indicates are as follows:
Wherein, A1For the amplitude of light carrier in upper arm, m (f1) it is electrooptic modulator to be measured in modulating frequency f1The tune at place Coefficient processed, Jp() is the Bessel function of the first kind of pth rank, and j is plural number.
Enter in frequency shifter in the light carrier of intervention module lower arm, shift frequency fsLight carrier light field afterwards are as follows:
The combining optical signal of interfere arm output is detected by photodetector to be measured, the photoelectric current of output are as follows:
By spectrum analysis module, it is mixed f in electric signal1±fsAnd fsCorresponding amplitude is respectively as follows:
i(f1±fs)=2A1A2J1[m(f1)]R(f1±fs) (4a)
i(fs)=2A1A2J0[m(f1)]R(fs) (4b)
The Amplitude Ration of two mixing ingredients are as follows:
The amplitude for adjusting modulated signal is Vs'=rVs, similarly obtain the Amplitude Ration of two mixing ingredients are as follows:
The ratio of two Amplitude Rations are as follows:
Solution formula (7) can obtain the index of modulation m of phase-modulator to be measured, and m value is substituted into formula (5), obtain The relatively fixed low frequency f of detector to be measuredsThe frequency response at place are as follows:
(2) when electrooptic modulator to be measured is electro-optic intensity modulator (with Mach-Zehnder modulator), modulated optical signal electricity Field EMZMIt indicates are as follows:
In formula, φ is phase difference caused by bias voltage.
Similarly, by spectrum analysis module, Amplitude Ration when different capacity drives twice is respectively as follows:
The ratio of two Amplitude Rations are as follows:
Work as φ1=0, φ2It when=π, solves formula (11), can obtain the index of modulation m of intensity modulator to be measured, and by m value It substitutes into formula (10a), obtains the relatively fixed low frequency f of detector to be measuredsThe frequency response at place are as follows:
Therefore in a fixed test macro, the self-correcting of a variety of opto-electronic device frequency responses is may be implemented in the present invention Quasi- test.
Embodiment
Laser output power is 10mW, frequency f0The light carrier of=193THz (wavelength is about 1550nm).Microwave signal It is f that source, which generates frequency,1The sinusoidal signal of=20GHz is modulated electrooptic modulator to be measured, in shift frequency difference interference module In lower arm, light carrier shift frequency amount is 70MHz, and upper and lower arm coupled output signal is detected by photodetector to be measured, output photoelectric Stream is analyzed by spectrum analysis module, and the power of unlike signal driving twice is respectively 10dBm and 4dBm, at this point, driving Signal voltage Amplitude Ration is r=0.5.(1) when phase-modulator and photodetector frequency response are tested, unlike signal is driven twice Dynamic mixed frequency signal Amplitude Ration is respectively H=-16.52dB and H'=-22.65dB, then the ratio of Amplitude Ration is 6.14dB twice, It can be obtained by formula (7), the index of modulation of the phase-modulator to be measured at frequency 20GHz is m=0.371, and bringing formula (8) into can Obtain photodetector to be measured relatively fixed low frequency f at frequency 20GHzsRelative frequency response at=70MHz is -2.04dB; (2) when Mach-Zehnder modulator and photodetector frequency response are tested, when the power of signal driving is 10dBm, bias voltage When caused phase difference is 0, mixed frequency signal Amplitude Ration is H=-21.56dB, when the power of signal driving is 4dBm, bias voltage When caused phase difference is π, mixed frequency signal Amplitude Ration is H'=17.53dB, then the ratio of Amplitude Ration is -39.09dB twice, is led to Crossing formula (11) can obtain, and the index of modulation of the phase-modulator to be measured at frequency 20GHz is m=0.421, bring formula (10a) into Photodetector to be measured relatively fixed low frequency f at frequency 20GHz can be obtainedsAt=70MHz relative frequency response for- 2.01dB。
The above embodiment is interpreted as being merely to illustrate the present invention rather than limit the scope of the invention.? After the content for having read record of the invention, technical staff can be made various changes or modifications the present invention, these equivalent changes Change and modification equally falls into the scope of the claims in the present invention.

Claims (8)

1. a kind of opto-electronic device frequency response test device of All-in-One, which is characterized in that including laser, signal source, shifting Frequency difference interference module, photodetector to be measured and spectrum analysis module;Wherein, the shift frequency difference interference module is by electricity to be measured Optical modulator and frequency shifter composition, and be respectively placed in the upper and lower arm of Mach-Zehnder of shift frequency difference interference module;The signal Source is electrically connected with the input electrode end of electrooptic modulator to be measured;The laser, shift frequency difference interference module, photodetection to be measured Successively light connects between device;It is electrically connected between the photodetector output end to be measured and spectrum analysis module, the laser For generating direct current light wave, signal source is for generating sinusoidal microwave signal, and shift frequency difference interference module is for realizing the outer of light wave Beat frequency, detection and spectrum analysis module of the photodetector to be measured for optical signal are for analyzing photodetector output letter Number spectrum information, electrooptic modulator to be measured is for loading sinusoidal microwave signal to direct current light wave, and frequency shifter is for realizing straight The frequency shifts of streamer wave, setting signal source, by different output voltage drivings twice, pass through frequency spectrum under identical working frequency Analysis module obtains the power ratio of tie element, by the ratio of power ratio under different driving twice, realizes to electric light to be measured The frequency response of modulator is tested, and then inverse goes out photodetector frequency response to be measured.
2. a kind of opto-electronic device frequency response test device of All-in-One according to claim 1, which is characterized in that institute Stating electrooptic modulator to be measured is electro-optic phase modulator or electro-optic intensity modulator, for the phase or intensity to direct current light wave It is modulated.
3. a kind of opto-electronic device frequency response test device of All-in-One according to claim 2, which is characterized in that when When electrooptic modulator to be measured is electro-optic phase modulator, modulated optical signal electric field EPMIt indicates are as follows:
Wherein, A1For the amplitude of light carrier in upper arm, m (f1) it is electrooptic modulator to be measured in modulating frequency f1The modulation system at place Number, Jp() is the Bessel function of the first kind of pth rank, and j is plural number;
The relatively fixed low frequency f of detector to be measuredsThe frequency response at place are as follows:
Wherein, J0() is the Bessel function of the first kind of the 0th rank, J1() is the Bessel function of the first kind of the 1st rank, R (fs) With R (f1±fs) it is respectively photodetector to be measured in frequency fsAnd f1±fsThe responsiveness at place.
4. a kind of opto-electronic device frequency response test device of All-in-One according to claim 3, which is characterized in that when When electrooptic modulator to be measured is electro-optic intensity modulator, modulated optical signal electric field EMZMIt indicates are as follows:
In formula, φ is phase difference caused by bias voltage;
Obtain the relatively fixed low frequency f of detector to be measuredsThe frequency response at place are as follows:
5. a kind of opto-electronic device frequency response test method based on one of claim 1-4 described device, which is characterized in that The following steps are included:
(1) it is f that signal source, which generates frequency,1It is V with amplitudesMicrowave signal, by electrooptic modulator to be measured load on light wave, Modulated signal with through frequency shifter shift frequency fsLight carrier afterwards is combined, and combining optical signal is sent into photodetector and carries out photoelectricity turn It changes, obtains mixed frequency signal, utilize radio-frequency component f in spectrum analysis module record mixed frequency signalsAnd f1±fsAmplitude Ration;
(2) in the case where not changing microwave signal source frequency, the amplitude for changing output microwave signal is Vs'=rVs, utilize frequency Spectrum analysis module records radio-frequency component f in mixed frequency signalsAnd f1±fsAmplitude Ration;
(3) by the ratio of step (1), (2) Amplitude Ration twice to eliminate the frequency response of photodetector to be measured, due to adjusting twice Signal amplitude ratio r processed is it is known that acquiring the index of modulation m of electrooptic modulator to be measured;
(4) after the index of modulation for obtaining electrooptic modulator to be measured, photodetector to be measured is gone out by frequency content Amplitude Ration inverse Responsiveness R;
(5) change the frequency f of microwave signal source1, and repeat the above process, obtain electrooptic modulator to be measured and photodetection to be measured Device realizes the self calibration test of the opto-electronic device frequency response of All-in-One in the frequency response of different frequency.
6. opto-electronic device frequency response test method according to claim 5, which is characterized in that
The step (1) utilizes radio-frequency component f in spectrum analysis module record mixed frequency signalsAnd f1±fsAmplitude Ration, are as follows:
In formula, H indicates radio-frequency component f in mixed frequency signalsAnd f1±fsAmplitude Ration, M is function about m, and R is photoelectricity to be measured The responsiveness of detector.
7. opto-electronic device frequency response test method according to claim 5, which is characterized in that the step (2) exists In the case where not changing microwave signal source frequency, the amplitude for changing output microwave signal is Vs'=rVs, utilize spectrum analysis module Record radio-frequency component f in mixed frequency signalsAnd f1±fsAmplitude Ration, are as follows:
M' is the function about r and m in formula;
8. the opto-electronic device frequency response test method according to one of claim 5-7, which is characterized in that it is described twice Amplitude Ration r ≠ 1 of microwave signal driving.
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