CN110176541A - A kind of vulcanized lead Colloidal Quantum Dots solar battery and preparation method based on convection current assembling sedimentation - Google Patents
A kind of vulcanized lead Colloidal Quantum Dots solar battery and preparation method based on convection current assembling sedimentation Download PDFInfo
- Publication number
- CN110176541A CN110176541A CN201910494372.7A CN201910494372A CN110176541A CN 110176541 A CN110176541 A CN 110176541A CN 201910494372 A CN201910494372 A CN 201910494372A CN 110176541 A CN110176541 A CN 110176541A
- Authority
- CN
- China
- Prior art keywords
- quantum dot
- zinc oxide
- solution
- layer
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/152—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising zinc oxide, e.g. ZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of vulcanized lead Colloidal Quantum Dots solar batteries and preparation method thereof based on convection current assembling sedimentation.Vulcanized lead quantum dot solar cell is prepared using convection current assembling sedimentation, strengthen the attraction between quantum dot and between quantum dot substrate, to reduce quantum dot average headway, improve the osmotic effect between quantum dot and array structure substrate, form closelypacked quantum dot film, it is obviously improved quantum dot in quantum dot photovoltaic device performance and preparation process to the resistance of air atmosphere, obtains the bulk heterojunction quantum dot solar cell with good infiltration structure.Since the temperature of convection current packaging technology is lower, quantum dot device is enable to be compatible with flexible substrate, carried out in air, simple process.Technical solution of the present invention effectively improves quantum dot film pattern, further improves quantum dot photovoltaic device incident photon-to-electron conversion efficiency, to quantum spot semiconductor device large scale preparation and application, promotes its commercialization to have the function of positive.
Description
Technical field
The present invention relates to a kind of vulcanized lead Colloidal Quantum Dots solar battery based on convection current assembling sedimentation and its preparations
Method belongs to photovoltaic material technical field.
Background technique
Convection current assembles sedimentation, for a kind of side by the colloidal particle of evaporative fluid and capillarity power drive assembling film forming
Method, can prepare that large area is uniform, monolayer of particles film of ordered arrangement.Up to the present, which has been widely used in
The fields such as the large area preparations of all kinds of electronic devices, surface modification.Currently, the mechanism study of convection current assembling sedimentation is based primarily upon
Two kinds of models, for nano particle due to convection action, what the particle in solution can be spontaneous shifts to solution/sky during the deposition process first
The meniscus contact line of vapor interface, i.e., well-known " coffee ring effect ", convection current assemble the physical process and drop of sedimentation
Volatilization process on substrate is similar, and as the solvent evaporates, nanoparticle is gradually pulled from solution forms two-dimensional film,
The liquid/air interface for subsequently forming local forms between nanoparticle or between substrate and has by force under capillary force effect
The gravitational potential of power finally overcomes the electrostatic repulsion forces between particle-particle and particle-substrate, to be formed between forcing particle maximum
Closs packing membrane structure.
For vulcanized lead quantum dot solar cell, film morphology plays a crucial role device performance.
Traditional laboratory scale method of spin coating is widely studied because its preparation process is simple, but its with it is many be difficult to avoid that lack
Point is such as difficult to compatible large area processing procedure, thin caused by stock utilization only has within 10% and spin coating process centrifugal force acts on
The problems such as film homogeneity is poor.Illan J. Kramer etc. uses spray coating method and prepares quantum dot solar, in this report, makees
Person devises semi-automatic spraying apparatus to realize quantum dot film preparation-ligand exchange-cleaning process automation preparation, grinds
Quantum dot film pattern can be effectively improved by spray coating method by studying carefully discovery, reduce organic residue inside quantum dot, reduce average quantum
Point spacing promotes device efficiency so as to improve photo-generated carrier transmission.Although spray coating method can be effectively improved quantum dot film matter
Amount realizes device large scale preparation, but its preparation process is extremely complex, needs tens of circulation spraying process, and waste a large amount of
Quanta point material.Therefore, a kind of preparation skill for taking into account the features such as excellent stock utilization is produced with quick, large area is found
Art, it has also become one of the primary factor of limitation Colloidal Quantum Dots photovoltaic device development.
Summary of the invention
The present invention is more managed in view of the deficienciess of the prior art, provide a kind of the tightly packed of achievable quantum dot
The film morphology thought, effectively promotion carrier transport, and the waste of active material is reduced, realize the glue of fast device preparation process
The convection current of body quantum dot film assembles deposition method, to prepare efficient Colloidal Quantum Dots solar battery.
Realize that the technical solution of the object of the invention is to provide a kind of vulcanized lead Colloidal Quantum Dots based on convection current construction from part too
The preparation method of positive energy battery, comprising the following steps:
Step 1: the preparation of electron transfer layer
(a) preparation of zinc oxide nanocrystalline
0.11g~11g zinc acetate dihydrate is dissolved in the methanol of 20~200ml, zinc acetate dihydrate methanol is obtained
Solution；The g potassium hydroxide of 0.1 g~10 is dissolved in the methanol of the ml of 10 ml~100, be added dropwise to dropwise temperature be 40 DEG C~
In 70 DEG C of zinc acetate dihydrate methanol solution, completed in being titrated in 1~60 minute；After reaction carries out 10~300 minutes,
Stop reaction and stand cooling 1~2 hour, removes supernatant, remove supernatant liquor after surplus solution is centrifugated, it is clear with methanol
It washes, obtained zinc oxide nanocrystalline is made into the solution that concentration is 10~200 mg/ml, is protected under conditions of temperature is 0~8 DEG C
It deposits stand-by；
(b) using one of following method, zinc oxide electron transfer layer is prepared
The zinc oxide nanocrystalline electron transfer layer of planar structure: being by volume 1:0.1~1:10, by step 1 (a) preparation
Zinc oxide nanocrystalline solution is added in butanol or methanol solution, then with after the filtering of the polytetrafluoroethylene (PTFE) filter tip of 0.22 mm, with
The speed of 800~6000 rpm is spin-coated on ITO substrate, obtains a kind of zinc oxide nanocrystalline electron transfer layer of planar structure；
Zinc oxide nano-wire array electron transfer layer, zinc oxide nano-wire array electron transfer layer or growth including vertical-growth
It is oriented along the zinc oxide nano-wire array electron transfer layer of random direction；
With the hexa aqueous solution of the five nitric hydrate zinc of 0.001~1M of concentration and 0.001~1M of concentration with 1:0.1
The substrate for being prepared for zinc oxide nanocrystalline seed layer in deionized water, is placed on solution than mixing by~1100 molecular weight
In, heat growth 5 minutes~2 hours under conditions of temperature is 50~200 DEG C, to control nanowire length；Zinc-oxide nano
Linear array is cleaned with deionized water after reaction, is ultrasonically treated 1~180 minute, is moved back under conditions of temperature is 50~300 DEG C
Fire processing 5~180 minutes, the zinc oxide nano-wire array electron transfer layer for obtaining vertical-growth or the orientation of growth are along random side
To zinc oxide nano-wire array electron transfer layer；
The preparation of the zinc oxide nanocrystalline seed layer of the zinc oxide nano-wire array electron transfer layer of the vertical-growth: by 10~
After 500 mg Zinc diacetate dihydrates, 1~10 ml methyl cellosolve and 10~1000 μ l ethanol amines are mixed 5~600 minutes,
Be spin-coated on ITO substrate with the revolving speed of 1000~5000 rpm, temperature be 100~400 DEG C under conditions of annealing 1~
180 minutes, obtain zinc oxide nanocrystalline seed layer；
The orientation of growth along the zinc oxide nano-wire array electron transfer layer of random direction zinc oxide nanocrystalline seed layer
Preparation: be by volume 1:0.1~1:10, by step 1 (a) prepare zinc oxide nanocrystalline solution be added to butanol or first
In alcoholic solution, then with after the polytetrafluoroethylene (PTFE) filter tip filtering of 0.22 mm, ITO substrate is spin-coated to the speed of 800~6000 rpm
On, obtain zinc oxide nanocrystalline seed layer；
Step 2: the preparation of vulcanized lead Colloidal Quantum Dots active layer
(a) synthesis of vulcanized lead Colloidal Quantum Dots
50~500 mg lead oxide, 0.1~5 g oleic acid and 5~100 g octadecylenes are mixed and are added in three-neck flask, 80~
It is stirred 0.5~50 hour under 115 DEG C of vacuum condition, is warming up to 120~180 DEG C under a nitrogen atmosphere, heating 0.5~5 is small
When after obtain plumbi oleas precursor solution；60~100 DEG C are reduced the temperature to again, the tetramethylsilane sulfane of 50~500 μ L is molten
Solution is injected into the three-neck flask equipped with plumbi oleas presoma with syringe into the octadecylene of 1~10 mL and reacts 1~100
Minute, reaction solution is cooled to room temperature with water-bath, after reinjecting 1~20 mL anhydrous n-hexane, reaction solution is moved into gloves
It is washed in case, isopropanol is added until muddiness, using speed centrifugal treating 1~10 minute of 4000~12000 rpm, discards
Clear liquid, then with n-hexane dissolution, centrifugal treating after proper amount of acetone is added, discards supernatant liquor, surplus solution is drained, consolidate
Body quantum dot, is transferred in nitrogen glove box and saves backup；
(b) convection current assembling sedimentation prepares Colloidal Quantum Dots active layer
Zinc oxide electron transfer layer substrate prepared by glass scraping blade and step 1 (b), is placed in even with 0~180 ° of angle degree
Above fast mobile platform, substrate and scraping blade slit spacing are 0.01~10 μm；Using n-hexane, pentane or normal octane as solvent,
Quantum dot prepared by step 2 (a) is configured to the quantum dot solution that concentration is 10~500 mg/ml, takes 10~30 microlitres of quantum
Point solution spontaneously forms meniscus in angle, along the formation direction at the uniform velocity water of meniscus in the angle of scraping blade and substrate
Dynamic substrate is translated, vulcanized lead Colloidal Quantum Dots film is obtained after solvent voluntarily volatilizees；It, will be dense after the completion of quantum dot film deposition
Degree is that the tetrabutylammonium iodide TBAI methanol solution of 1~100 mg/ml is dripped dropwise in quantum dot layer surface progress ligand exchange, is matched
Body swap time is 5~200s, is cleaned after the completion with acetonitrile, and nitrogen gun drying prepares PbS-TBAI active layer；Repeat this step
2~50 times, obtain quantum dot active layer；
Step 3: the preparation of vulcanized lead hole transmission layer and metal electrode
(a) sulphur is deposited in quantum dot active layer prepared by step 2 (b) using convection current assembling sedimentation identical with step 2 (b)
Change lead quantum dot film；After the completion of quantum dot film deposition, the dithioglycol for being 0.001%~0.1% by concentration of volume percent
The acetonitrile solution of EDT drips dropwise carries out ligand exchange on quantum dot layer surface, and the ligand exchange time is 3s~180s, is used after the completion
Pure acetonitrile solution cleaning, nitrogen gun drying prepare PbS-EDT layers；It repeats this step 2~50 times, obtains vulcanized lead hole transport
Layer；
(b) it is lower than 1 × 10 in vacuum pressure-6In the vacuum chamber of Torr, using hot evaporation process, it is deposited with the speed of 0.5/s
The gold electrode of 60~300 nm.
Above-mentioned preparation method in step 1 (b), prepares zinc oxide nanocrystalline electron transfer layer and zinc-oxide nano Jingjing
Kind layer, spin coating revolving speed are 2500 rpm；Prepare zinc oxide nano-wire array electron transfer layer, five nitric hydrate zinc aqueous solutions it is dense
Degree is 0.05M, and the concentration of hexa aqueous solution is 0.05M, five nitric hydrate zinc and hexa mixed solution
Molecular weight ratio be 1:1；Zinc oxide nanowire growth temperature is 75 DEG C, and growth time is 30 minutes；Zinc-oxide nano linear array
After reaction, sonication treatment time 5 minutes, annealing temperature was 120 DEG C to column, and annealing time is 10 minutes.
Step 2 (b) convection current assembling sedimentation is prepared in Colloidal Quantum Dots active layer, and glass intermediate plate is with substrate angle
45 °, slit spacing is 1 μm；Vulcanized lead Colloidal Quantum Dots solution is the hexane solution of 80 mg/ml of concentration；Move horizontally lining
The speed at bottom is 1 μm/s；The concentration of the methanol solution of tetrabutylammonium iodide is 10 mg/ml, and the ligand exchange time is 20s；
PbS-TBAI active layer repeats to be prepared as 10 times.
In step 3 (a), the concentration of volume percent of the acetonitrile solution of dithioglycol is 0.04%, and the ligand exchange time is
20s；PbS-EDT hole transmission layer repeats to be prepared as 4 times.
Technical solution of the present invention further includes a kind of vulcanized lead Colloidal Quantum Dots solar battery based on convection current construction from part, device
Part structure is followed successively by indium tin oxide-coated glass, zinc oxide nanocrystalline or zinc oxide nano-wire array electron-transport from bottom to top
Layer, using iodine as the lead sulfide quantum dot layer of ligand, using dithioglycol as the lead sulfide quantum dot layer of ligand and gold electrode；The oxygen
Change zinc nanocrystalline or zinc oxide nano-wire array electron transfer layer, using iodine as the lead sulfide quantum dot layer of ligand, with ethylene dithiol
Alcohol is that the lead sulfide quantum dot layer of ligand and gold electrode are obtained by claim 1 preparation method.
The principle of the present invention is: vulcanized lead quantum dot film is prepared using convection current assembling sedimentation, in the effect of capillary force
Under can form closelypacked film morphology, on the basis of realizing large area processing procedure improve quantum dot film morphology, shorten
Quantum dot average headway in film realizes the close-packed structure of Colloidal Quantum Dots film.The pattern is conducive between enhancing quantum dot
Coupling, the final incident photon-to-electron conversion efficiency for promoting quantum dot solar cell.Further, since hair between quantum dot in deposition process
Thin attraction effect, which, which assembles preparation process, to generate effective resistance to air atmosphere, especially generate to air humidity
Resistance, so that quantum dot surface passivation effect is obviously improved under high humility preparation condition, to promote device in high humility system
Photovoltaic performance under the conditions of standby.At the same time, convection current assemble method can promote quantum dot filling effect, can be in zinc-oxide nano
Obtaining in linear array has the orderly bulk heterojunction structure well permeated, so that lifting body heterostructure quantum dots solar battery is imitated
Rate.
Compared with prior art, it is had the advantage that using technical solution provided by the invention
1. it is standby to be compatible with big wheat flour for the present invention assembles sedimentation compared to traditional laboratory scale spin-coating method using convection current
Technique and low temperature flexibility substrate are, it can be achieved that Colloidal Quantum Dots solar battery scale is quickly prepared, low in cost, great business
Change prospect.
For 2. the present invention obtains quantum dot film compared to spin-coating method using the quantum dot film that convection current construction from part obtains,
Its pattern is significantly improved, and film uniformity is more excellent, and quantum dot average headway is smaller.This feature not only increases
Coupling has quantum dot device preparation to improve its photovoltaic device incident photon-to-electron conversion efficiency between quantum dot
The distinctive ability for resisting air atmosphere, finally makes quantum dot device still have excellent photovoltaic under high humidity conditions
Energy.
3. convection current assembling depositing operation provided by the invention not only improves quantum dot film pattern, while in deposition process
In, the capillary force of strength can be effectively improved interface topography between quantum dot and substrate.In the zinc oxide obtained based on this method
In nano-wire array bulk heterojunction structure quantum dot solar cell, quantum dot is achieved between zinc oxide nano-wire array gap
Effective infiltration, finally reduces interface void, improves interfacial contact, finally improves orderly bulk heterojunction structure quantum dot photovoltaic device
Part efficiency.
Detailed description of the invention
Fig. 1 is the vulcanized lead Colloidal Quantum Dots film convection current assembling flow path schematic diagram that technical solution of the present invention provides.
Fig. 2 is (relatively wet under the conditions of drying or humid air by spin-coating method and convection current assembling sedimentation in the present invention
Electric current-electricity that degree respectively may be about 10% or 60%) the planar structure quantum dot device of preparation measures under AM1.5 solar simulator
It buckles line chart.
Fig. 3 is to assemble the quantum dot film pattern comparison diagram that sedimentation is obtained with spin-coating method using convection current in the present invention,
In, scheme a, b is respectively the transmission electron microscope high-resolution for the quantum dot film for using spin-coating method and convection current construction from part to prepare
Image；Scheme the low-angle scattering of X-rays image that c is the quantum dot film amount obtained by spin-coating method and convection current construction from part, wherein right
The quantum dot average headway that stream construction from part obtains is obviously reduced.
Fig. 4 is PbS quantum dots-TBAI film x-ray photoelectron spectroscopy (XPS) figure in the present invention after ligand exchange.Its
In, scheme a, b is respectively the quantum dot film O1s map that spin-coating method and convection current construction from part are prepared under the conditions of different humidity；Figure
C is PbS-TBAI quantum dot surface iodine/lead element ratio.The above map is returned as unit of the integral area at the peak Pb 4f
One change processing.
Fig. 5 is to prepare bulk heterojunction quantum dot solar cell device based on zinc oxide nano-wire array in the present invention
Energy and zinc oxide array shape appearance figure.Wherein figure a is the current-voltage that quantum dot device measures under AM1.5 solar simulator
Curve graph；Scheme b, zinc oxide nano-wire array scanning electricity that figure c is respectively vertically grown and along random direction growth
Sub- MIcrosope image (left figure is top view, and middle figure is sectional view, and right figure is the top view after convection current assembling deposition quantum dot).
Fig. 6 is quantum dot bulk heterojunction device architecture and interface topography figure in the present invention, schemes a, and b is cutting for quantum dot device
Surface confocal ion beam transmission scanning electron microscope (FIB-TEM) image.Scheming c is to be assembled by spin-coating method (left figure) and convection current
Sedimentation (right figure) preparation and quantum dot device cross sectional scanning electron microscope (SEM) image.Scheme d, e is respectively to pass through spin coating
Surface sweeping transmission electron microscope element distribution analysis (STEM- at the bulk heterojunction device interfaces that method and convection current construction from part obtain
EPX) image.
Specific embodiment
Below in conjunction with the drawings and specific embodiments to further illustrate the technical scheme of the present invention.Unless there are special theory
Bright, reagent used in the following example, material and instrument can be obtained by commercial sources.
Embodiment 1:
The present embodiment prepares Colloidal Quantum Dots solar battery using convection current construction from part.
(1) preparation of zinc oxide electron transfer layer:
ITO electro-conductive glass is successively cleaned by ultrasonic by deionized water, detergent, isopropanol, acetone, then prepares zinc oxide electronics
Transport layer.Present invention employs two distinct types of zinc oxide electron transfer layer, one of which is based on zinc oxide nanocrystalline
Planar structure electron transfer layer, it is another then be ordered into zinc oxide nano-wire array electron transfer layer.
A) preparation of planar structure zinc oxide nanocrystalline:
Zinc acetate dihydrate (1.1 g) is transferred in three-neck flask and is dissolved in methanol solvate (76ml), is then existed
Solution is heated to 60 DEG C in nitrogen atmosphere；Potassium hydroxide (0.57g) is dissolved in methanol (24 ml) and pours into separatory funnel
In, it then instills in zinc acetate methanol solution dropwise, starts to react, entire titration time is 10 minutes；150 points are carried out wait react
Zhong Hou stops reacting and standing cooling 2 hours, supernatant liquor is removed after surplus solution is centrifugated and cleans two with methanol
Secondary, obtained zinc oxide nanocrystalline solid is finally dissolved in by supernatant liquor of going out after centrifuge separation with the concentration of 80 mg/ml
Methanol: cryo-conservation in the solution of chloroform 1:1.
Spin coating process is filtered using the polytetrafluoroethylene (PTFE) filter tip of 0.22 mm, is spin-coated to the speed of 800~6000 rpm
On ITO substrate to obtain the final product.
B) preparation of zinc oxide nano-wire array:
By Zinc diacetate dihydrate (220 mg), methyl cellosolve (2 ml) and ethanol amine (61 μ l) be mixed after five minutes with
The revolving speed of 4500 rpm, which is spin-coated to, to be etched in advance on ITO substrate that is good and cleaning up, is then annealed 15 minutes with 150 DEG C,
It is prepared into No.1 seed layer.
The zinc oxide nanocrystalline solution of the cryo-conservation prepared in above-mentioned steps a) is spin-coated to the revolving speed of 2500 rpm
On ITO substrate, it is prepared into No. two seed layers.
The substrate for being coated with No.1 and No. two seed layers is placed on 75 DEG C of heating lifes in prepared nanowire growth solution
Prepare the zinc oxide nano-wire array for being about 150 nm within long 30 minutes, the growth solution by 0.05M five nitric hydrate zinc and
The hexa aqueous solution of 0.05M is mixed with the molecular weight ratio of 1:1.After completion of the reaction by zinc oxide nano-wire array
It is rinsed, and is ultrasonically treated 5 minutes with deionized water, 120 DEG C are annealed after five minutes to obtain the final product.Wherein No.1 seed layer substrate growth
Zinc oxide nano-wire array is vertically grown, and the zinc oxide nanowire of No. two seed layers growth is distributed along random direction.
(2) using iodine as the preparation of the Colloidal Quantum Dots active layer of surface ligand
Bibliography Shi G, Wang Y, Liu Z, et al. Stable and Highly Efficient PbS
Quantum Dot Tandem Solar Cells Employing a Rationally Designed Recombination
Layer. Adv.Energy Mater, method prepares vulcanized lead Colloidal Quantum Dots (partial size 3 in 2017,1602667.
Nm), detailed process is as follows: mixed oxidization lead (0.223g) in 100mL there-necked flask, oleic acid (0.7g) and 1- octadecylene
(20g), and apply Lake line technology using standard airless and there-necked flask is vacuum-treated, while being heated 1 hour in 100 DEG C,
Then lead to nitrogen and is warming up to 150 DEG C and heats 1h.Adjust the tetramethylsilane sulfane that temperature injects rapidly 0.1M to 75 DEG C at this time
Octadecene solution (5ml), reaction carries out after ten minutes, returns back to room temperature to solution temperature, is added 20ml n-hexane, and with dividing
Not Yong isopropanol and acetone washing, discard solution after centrifuge separation, be dried for standby.
Referring to attached drawing 1, it is the convection current assembling flow path schematic diagram of Colloidal Quantum Dots, during the deposition process, due to " coffee ring
Effect " makes nano particle is spontaneous under convection action to shift to solution/Air Interface meniscus contact line, with waving for solvent
Hair, nanoparticle is gradually pulled from solution forms two-dimensional film, the liquid/air interface of local is subsequently formed, in capillary
Power acts between lower nanoparticle or forms strong gravitational potential between substrate, finally overcomes particle-particle and particle-
Electrostatic repulsion forces between substrate, to form maximum closs packing membrane structure between forcing particle.Experimentation is as follows: by above-mentioned sulphur
Change lead quantum dot (160mg) to be dissolved in n-hexane (2mL), is configured to the hexane solution of 80 mg/mL；By above-mentioned zinc oxide
Electron transfer layer substrate is placed at the uniform velocity platform, movable glass scraping blade to suitable position, is allowed to form 45° angle with substrate, and
Distance is kept for about 1 μm；With liquid-transfering gun transfer quantum dot hexane solution (10 μ l) in substrate and glass scraping blade angle, shape immediately
At meniscus, then with the speed of 1 μm/s towards the mobile substrate of the horizontal average rate in meniscus direction, after the completion of to be deposited, by 10
The methanol solution (about 0.5ml) of the tetrabutylammonium iodide of mg/ml drips dropwise carries out ligand exchange, 20s on quantum dot film surface
It is washed afterwards with acetonitrile and nitrogen gun dries up, then prepare other 9 layers (totally ten layers) using iodine as the vulcanized lead amount of ligand using the same terms
Son point layer (PbS-TBAI), total film thickness is about 250 nm, completes the preparation of quantum dot active layer.
(3) preparation of vulcanized lead hole transmission layer and metal electrode.
Hole transmission layer uses the quantum dot layer (PbS-EDT) using dithioglycol as ligand, quantum dot film deposition velocity
And quantum dot hexane solution concentration is identical as the condition of quantum dot layer prepared in above-mentioned PbS-TBAI active layer, to quantum
After the completion of point layer deposition, the dithioglycol acetonitrile solution of 0.04% volumetric concentration is dripped dropwise and carries out ligand on quantum dot layer surface
Exchange, is cleaned with pure acetonitrile solution afterwards and is dried up with nitrogen gun, and above-mentioned steps are repeated 4 times to prepare fine and close PbS-EDT layer.Most
It is lower than 1 × 10 in vacuum pressure afterwards-6It is deposited 100 nm's in a manner of hot evaporation in the vacuum chamber of Torr with the speed of 0.5/s
Gold electrode.
Embodiment 2:
The present embodiment examines the photoelectric properties of the solar battery based on zinc oxide nanocrystalline planar structure electron transfer layer
It surveys.
Under AM1.5 analog light source (with the standard silion cell calibration by NREL certification), with 100mW/cm2Power,
To the quantum dot solar cell prepared in embodiment 1I-VCurve is compared test, and result is as shown in Figure 2 and Table 1.
Referring to attached drawing 2, to assemble sedimentation under the conditions of drying or humid air by spin-coating method and convection current in the present invention
What the planar structure quantum dot device of (relative humidity respectively may be about 10% or 60%) preparation measured under AM1.5 solar simulator
Current -voltage curve figure.
Table 1 is the quantum dot solar cell obtained under the conditions of different humidity using convection current assembling sedimentation and spin-coating method
The photovoltaic performance parameter measured under AM1.5G solar simulator.
Table 1
In conjunction with Fig. 2 and table 1 as can be seen that assembling the quantum dot solar cell of sedimentation acquisition either in high humidity by convection current
Device performance is superior to the quantum dot sun obtained by traditional experiment room scale spin-coating method under degree or low humidity preparation condition
Can battery, its average efficiency reaches 10.13% under low-moisture conditions, and 8.25%, far superior to spin-coating method are reached under high humidity
The device efficiency 3.61% obtained under high humidity conditions shows excellent humidity resistance.
Referring to attached drawing 3, for the quantum dot film pattern pair for assembling sedimentation by convection current in the present invention and spin-coating method obtains
Than figure, wherein figure a, the transmission electron microscope that b respectively passes through the quantum dot film of spin-coating method and the preparation of convection current construction from part are high
Image in different resolution, from figure a, as can be seen that the quantum dot film obtained by convection current construction from part is finer and close and uniform in b, and
Quantum dot average headway is smaller, which can enhance coupling between quantum dot, facilitates the transmission of carrier, to mention
Rise device efficiency.Scheme the low-angle scattering of X-rays image that c is the quantum dot film amount obtained by spin-coating method and convection current construction from part,
Wherein, the quantum dot average headway that convection current construction from part obtains is obviously reduced.
Referring to attached drawing 4, for the PbS quantum dots-TBAI film x-ray photoelectron spectroscopy after ligand exchange in the present invention
(XPS) figure.Wherein, scheme a, b is respectively the quantum dot for using spin-coating method and convection current construction from part to prepare under the conditions of different humidity
Film O1s map；Figure c is PbS-TBAI quantum dot surface iodine/lead element ratio.The above map is with the integral at the peak Pb 4f
Area is normalized for unit.
Such as the figure a in Fig. 4, shown in b, x-ray photoelectron spectroscopy test can be clearly seen that after swarming is fitted:
Humidity can seriously affect quantum dot surface hydroxy radical content.For the quantum dot film that spin-coating method obtains, in high humidity environment
Under the film for preparing show strongest hydroxyl peak (at 531.2 eV), and also emerge at 533.5 eV apparent out
Acromion, illustrates water or methanol that absorption is still retained in film, and the peak C-O also relative increase, illustrates in film still residual oil
Sour or a large amount of methanol, a large amount of organic residue are unfavorable for device performance.And for the film that convection current construction from part obtains, no matter
It is under high humility and low humidity, quantum dot surface hydroxy radical content will be less than the film that spin-coating method obtains, at the same time, residual
Remaining water in the film and methanol content are less.These results suggest that the film that spin-coating method obtains is easier to absorption atmospheric moisture,
It simultaneously can be in a large amount of ligand solvent methanol of film internal residual and oleic acid；In contrast, convection current construction from part is shown " from row
Water " effect remains less organic residue in film, while showing the resistivity to air humidity, the amount finally obtained
I/Pb ratio is higher in son point film, illustrates that quantum dot surface passivation effect is more excellent.
Embodiment 3:
The present embodiment detects the bulk heterojunction quantum dot solar cell based on zinc oxide nano-wire array.
Under AM1.5 analog light source, with 100mW/cm2Power, to being prepared in embodiment 1 based on zinc oxide nanowire
The quantum dot solar cell of arrayI-VCurve is compared test, and result is as shown in Fig. 5 and table 2.
Referring to attached drawing 5, to prepare bulk heterojunction quantum dot solar cell based on zinc oxide nano-wire array in the present invention
The current -voltage curve figure measured under AM1.5 solar simulator.It can be seen that in the method for the present invention from the figure a in Fig. 5
The bulk heterojunction quantum dot solar cell device photoelectric transformation efficiency obtained by convection current construction from part, which will be significantly higher than, passes through rotation
The quantum dot solar cell that coating obtains.Wherein based on the quantum dot device of the zinc oxide nano-wire array vertically grown
Part efficiency is significantly superior, is mainly reflected in higher fill factor.Scheme b, it is that c is respectively vertically grown and along random
(left figure is top view to the zinc oxide nano-wire array scanning electron microscope image of direction growth, and middle figure is sectional view, and right figure is
Top view after convection current assembling deposition quantum dot), it is not difficult to see from it that, after depositing quantum dot layer, along the oxygen of random direction growth
Change zinc nano-wire array surface and a large amount of holes occur, which is unfavorable for interfacial contact, so that limit device shows；It is opposite and
Speech, its osmotic effect after depositing quantum dot layer of the zinc oxide nano-wire array based on vertical direction growth is good, has no obvious
Thus its device performs better than hole.
A is schemed for quantum dot bulk heterojunction device architecture and interface topography figure in the present invention referring to attached drawing 6, and b is respectively logical
The section for crossing the quantum dot device of spin-coating method and convection current assembling sedimentation preparation is total to focused ion beam transmission scanning electron microscope
(FIB-TEM) image.Scheming c is that the quantum dot device for assembling sedimentation (right figure) preparation by spin-coating method (left figure) and convection current is cut
Surface scan electron microscope (SEM) image；Figure d and e is respectively to pass through spin-coating method (left figure) and convection current construction from part (right figure) acquisition
Bulk heterojunction device interfaces at surface sweeping transmission electron microscope element distribution analysis (STEM-EPX) image.
In Fig. 6, a is schemed, b compared the shape appearance figure of two kinds of different components, as can be seen that obtaining by spin-coating method from figure a
Quantum dot device interface in there are a large amount of striated organic residues, and scheme in the device obtained in b by convection current construction from part
Have no obvious fringe-like structures.From the SEM image of figure c it can also be seen that, (c is schemed in the quantum dot device that convection current construction from part obtains
It is right) zinc oxide nano-wire array and quantum dot film interface have no apparent hole, and (figure c in the device that spin-coating method obtains
It is left) there are a large amount of holes.At the same time, scheme d, e is device section element analysis image, and wherein left-side images are Pb signal, right
Side image is I signal, therefrom, it is apparent that zinc oxide nano in the quantum dot film obtained in figure e by convection current construction from part
Occur apparent Pb and I signal inside nanowire arrays, illustrate that quantum dot can effectively penetrate into nano-wire array bottom, and schemes in d
Pb, I signal and zinc oxide nano-wire array are clearly separated on vertical space, illustrate that quantum dot osmotic effect is bad.To sum up institute
It states, the present invention is obtained by convection current construction from part with the bulk heterojunction quantum dot solar cell for well interpenetrating structure.
Table 2 is that quantum dot that sedimentation and spin-coating method obtain above and below the substrate of the different orientations of growth is assembled using convection current too
The photovoltaic performance parameter that positive energy battery measures under AM1.5G solar simulator.
Table 2
。
Claims (5)
1. a kind of preparation method of the vulcanized lead Colloidal Quantum Dots solar battery based on convection current construction from part, it is characterised in that including
Following steps:
Step 1: the preparation of electron transfer layer
(a) preparation of zinc oxide nanocrystalline
0.11g~11g zinc acetate dihydrate is dissolved in the methanol of 20~200ml, zinc acetate dihydrate methanol is obtained
Solution；The g potassium hydroxide of 0.1 g~10 is dissolved in the methanol of the ml of 10 ml~100, be added dropwise to dropwise temperature be 40 DEG C~
In 70 DEG C of zinc acetate dihydrate methanol solution, completed in being titrated in 1~60 minute；After reaction carries out 10~300 minutes,
Stop reaction and stand cooling 1~2 hour, removes supernatant, remove supernatant liquor after surplus solution is centrifugated, it is clear with methanol
It washes, obtained zinc oxide nanocrystalline is made into the solution that concentration is 10~200 mg/ml, is protected under conditions of temperature is 0~8 DEG C
It deposits stand-by；
(b) using one of following method, zinc oxide electron transfer layer is prepared
The zinc oxide nanocrystalline electron transfer layer of planar structure: being by volume 1:0.1~1:10, by step 1 (a) preparation
Zinc oxide nanocrystalline solution is added in butanol or methanol solution, then with after the filtering of the polytetrafluoroethylene (PTFE) filter tip of 0.22 mm, with
The speed of 800~6000 rpm is spin-coated on ITO substrate, obtains a kind of zinc oxide nanocrystalline electron transfer layer of planar structure；
Zinc oxide nano-wire array electron transfer layer, zinc oxide nano-wire array electron transfer layer or growth including vertical-growth
It is oriented along the zinc oxide nano-wire array electron transfer layer of random direction；
With the hexa aqueous solution of the five nitric hydrate zinc of 0.001~1M of concentration and 0.001~1M of concentration with 1:0.1
The substrate for being prepared for zinc oxide nanocrystalline seed layer in deionized water, is placed on solution than mixing by~1100 molecular weight
In, heat growth 5 minutes~2 hours under conditions of temperature is 50~200 DEG C, to control nanowire length；Zinc-oxide nano
Linear array is cleaned with deionized water after reaction, is ultrasonically treated 1~180 minute, is moved back under conditions of temperature is 50~300 DEG C
Fire processing 5~180 minutes, respectively obtain vertical-growth zinc oxide nano-wire array electron transfer layer and the orientation of growth along with
The zinc oxide nano-wire array electron transfer layer in machine direction；
The preparation of the zinc oxide nanocrystalline seed layer of the zinc oxide nano-wire array electron transfer layer of the vertical-growth: by 10~
After 500 mg Zinc diacetate dihydrates, 1~10 ml methyl cellosolve and 10~1000 μ l ethanol amines are mixed 5~600 minutes,
Be spin-coated on ITO substrate with the revolving speed of 1000~5000 rpm, temperature be 100~400 DEG C under conditions of annealing 1~
180 minutes, obtain zinc oxide nanocrystalline seed layer；
The orientation of growth along the zinc oxide nano-wire array electron transfer layer of random direction zinc oxide nanocrystalline seed layer
Preparation: be by volume 1:0.1~1:10, by step 1 (a) prepare zinc oxide nanocrystalline solution be added to butanol or first
In alcoholic solution, then with after the polytetrafluoroethylene (PTFE) filter tip filtering of 0.22 mm, ITO substrate is spin-coated to the speed of 800~6000 rpm
On, obtain zinc oxide nanocrystalline seed layer；
Step 2: the preparation of vulcanized lead Colloidal Quantum Dots active layer
(a) synthesis of vulcanized lead Colloidal Quantum Dots
50~500 mg lead oxide, 0.1~5 g oleic acid and 5~100 g octadecylenes are mixed and are added in three-neck flask, 80~
It is stirred 0.5~50 hour under 115 DEG C of vacuum condition, is warming up to 120~180 DEG C under a nitrogen atmosphere, heating 0.5~5 is small
When after obtain plumbi oleas precursor solution；60~100 DEG C are reduced the temperature to again, the tetramethylsilane sulfane of 50~500 μ L is molten
Solution is injected into the three-neck flask equipped with plumbi oleas presoma with syringe into the octadecylene of 1~10 mL and reacts 1~100
Minute, reaction solution is cooled to room temperature with water-bath, after reinjecting 1~20 mL anhydrous n-hexane, reaction solution is moved into gloves
It is washed in case, isopropanol is added until muddiness, using speed centrifugal treating 1~10 minute of 4000~12000 rpm, discards
Clear liquid, then with n-hexane dissolution, centrifugal treating after proper amount of acetone is added, discards supernatant liquor, surplus solution is drained, consolidate
Body quantum dot, is transferred in nitrogen glove box and saves backup；
(b) convection current assembling sedimentation prepares Colloidal Quantum Dots active layer
Zinc oxide electron transfer layer substrate prepared by glass scraping blade and step 1 (b), is placed in even with 0~180 ° of angle degree
Above fast mobile platform, substrate and scraping blade slit spacing are 0.01~10 μm；Using n-hexane, pentane or normal octane as solvent,
Quantum dot prepared by step 2 (a) is configured to the quantum dot solution that concentration is 10~500 mg/ml, takes 10~30 microlitres of quantum
Point solution spontaneously forms meniscus in angle, along the formation direction at the uniform velocity water of meniscus in the angle of scraping blade and substrate
Dynamic substrate is translated, vulcanized lead Colloidal Quantum Dots film is obtained after solvent voluntarily volatilizees；It, will be dense after the completion of quantum dot film deposition
Degree is that the tetrabutylammonium iodide TBAI methanol solution of 1~100 mg/ml is dripped dropwise in quantum dot layer surface progress ligand exchange, is matched
Body swap time is 5~200s, is cleaned after the completion with acetonitrile, and nitrogen gun drying prepares PbS-TBAI active layer；Repeat this step
2~50 times, obtain quantum dot active layer；
Step 3: the preparation of vulcanized lead hole transmission layer and metal electrode
(a) sulphur is deposited in quantum dot active layer prepared by step 2 (b) using convection current assembling sedimentation identical with step 2 (b)
Change lead quantum dot film；After the completion of quantum dot film deposition, the dithioglycol for being 0.001%~0.1% by concentration of volume percent
The acetonitrile solution of EDT drips dropwise carries out ligand exchange on quantum dot layer surface, and the ligand exchange time is 3s~180s, is used after the completion
Pure acetonitrile solution cleaning, nitrogen gun drying prepare PbS-EDT layers；It repeats this step 2~50 times, obtains vulcanized lead hole transport
Layer；
(b) it is lower than 1 × 10 in vacuum pressure-6In the vacuum chamber of Torr, using hot evaporation process, it is deposited with the speed of 0.5/s
The gold electrode of 60~300 nm.
2. a kind of preparation of vulcanized lead Colloidal Quantum Dots solar battery based on convection current construction from part according to claim 1
Method, it is characterised in that: in step 1 (b), zinc oxide nanocrystalline electron transfer layer and zinc oxide nanocrystalline seed layer are prepared,
Spin coating revolving speed is 2500 rpm；Zinc oxide nano-wire array electron transfer layer is prepared, the concentration of five nitric hydrate zinc aqueous solutions is
0.05M, the concentration of hexa aqueous solution are 0.05M, point of five nitric hydrate zinc and hexa mixed solution
Sub- amount ratio is 1:1；Zinc oxide nanowire growth temperature is 75 DEG C, and growth time is 30 minutes；Zinc oxide nano-wire array is anti-
After answering, sonication treatment time 5 minutes, annealing temperature was 120 DEG C, and annealing time is 10 minutes.
3. a kind of preparation of vulcanized lead Colloidal Quantum Dots solar battery based on convection current construction from part according to claim 1
Method, it is characterised in that: step 2 (b) convection current assembling sedimentation is prepared in Colloidal Quantum Dots active layer, glass intermediate plate and substrate
Angle is 45 °, and slit spacing is 1 μm；Vulcanized lead Colloidal Quantum Dots solution is the hexane solution of 80 mg/ml of concentration；It is horizontal
The speed of mobile substrate is 1 μm/s；The concentration of the methanol solution of tetrabutylammonium iodide is 10 mg/ml, and the ligand exchange time is
20s；PbS-TBAI active layer repeats to be prepared as 10 times.
4. a kind of preparation of vulcanized lead Colloidal Quantum Dots solar battery based on convection current construction from part according to claim 1
Method, it is characterised in that: in step 3 (a), the concentration of volume percent of the acetonitrile solution of dithioglycol is 0.04%, and ligand is handed over
Changing the time is 20s；PbS-EDT hole transmission layer repeats to be prepared as 4 times.
5. a kind of vulcanized lead Colloidal Quantum Dots solar battery based on convection current construction from part, device architecture are followed successively by oxygen from bottom to top
Change indium tin electro-conductive glass, zinc oxide nanocrystalline or zinc oxide nano-wire array electron transfer layer, using iodine as the vulcanized lead amount of ligand
Son point layer, using dithioglycol as the lead sulfide quantum dot layer of ligand and gold electrode, it is characterised in that: the zinc oxide nanocrystalline or
Zinc oxide nano-wire array electron transfer layer, using iodine as the lead sulfide quantum dot layer of ligand, using dithioglycol as the sulphur of ligand
Change lead quantum dot layer and gold electrode is obtained by claim 1 preparation method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910494372.7A CN110176541A (en) | 2019-06-09 | 2019-06-09 | A kind of vulcanized lead Colloidal Quantum Dots solar battery and preparation method based on convection current assembling sedimentation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910494372.7A CN110176541A (en) | 2019-06-09 | 2019-06-09 | A kind of vulcanized lead Colloidal Quantum Dots solar battery and preparation method based on convection current assembling sedimentation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110176541A true CN110176541A (en) | 2019-08-27 |
Family
ID=67697977
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910494372.7A Pending CN110176541A (en) | 2019-06-09 | 2019-06-09 | A kind of vulcanized lead Colloidal Quantum Dots solar battery and preparation method based on convection current assembling sedimentation |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110176541A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111682117A (en) * | 2020-06-24 | 2020-09-18 | 合肥福纳科技有限公司 | Preparation method of quantum dot, photosensitive material layer and photovoltaic device |
| CN112151681A (en) * | 2020-09-25 | 2020-12-29 | 东北师范大学 | Preparation method and application of PbS quantum dot light absorption layer and solar cell |
| CN112340691A (en) * | 2020-11-11 | 2021-02-09 | 西湖大学 | Method suitable for assembling and reconstructing tiny objects on fluid interface and application thereof |
| CN112447910A (en) * | 2020-11-23 | 2021-03-05 | 东北师范大学 | Quantum dot solar cell and preparation method thereof |
| CN113502085A (en) * | 2021-04-11 | 2021-10-15 | 苏州大学 | Lead sulfide colloidal quantum dot ink, preparation method and application in printable solar cell |
| CN114242921A (en) * | 2021-12-09 | 2022-03-25 | 广东省科学院半导体研究所 | Luminous field effect transistor and preparation method thereof |
| CN114316947A (en) * | 2021-12-29 | 2022-04-12 | 苏州大学 | Large-size lead sulfide quantum dot, quantum dot ink, printed solar cell and preparation method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070190240A1 (en) * | 2006-02-08 | 2007-08-16 | Samsung Electronics Co., Ltd. | Method of forming nano-particle array by convective assembly, and convective assembly apparatus for the same |
| US20130327392A1 (en) * | 2012-06-07 | 2013-12-12 | California Institute Of Technology | Chemically Linked Colloidal Crystals and Methods Related Thereto |
| CN105679858A (en) * | 2016-01-20 | 2016-06-15 | 苏州大学 | Nanocrystalline composite center-based stacked solar cell and preparation method thereof |
| US20190094564A1 (en) * | 2015-11-24 | 2019-03-28 | The Board Of Trustees Of The University Of Illinois | Low-speckle light source and imaging devices with micro-refractive element stabilized laser array |
-
2019
- 2019-06-09 CN CN201910494372.7A patent/CN110176541A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070190240A1 (en) * | 2006-02-08 | 2007-08-16 | Samsung Electronics Co., Ltd. | Method of forming nano-particle array by convective assembly, and convective assembly apparatus for the same |
| US20130327392A1 (en) * | 2012-06-07 | 2013-12-12 | California Institute Of Technology | Chemically Linked Colloidal Crystals and Methods Related Thereto |
| US20190094564A1 (en) * | 2015-11-24 | 2019-03-28 | The Board Of Trustees Of The University Of Illinois | Low-speckle light source and imaging devices with micro-refractive element stabilized laser array |
| CN105679858A (en) * | 2016-01-20 | 2016-06-15 | 苏州大学 | Nanocrystalline composite center-based stacked solar cell and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| GUOZHENG SHI等: "Finely Interpenetrating Bulk Heterojunction Structure for Lead Sulfide Colloidal Quantum Dot Solar Cells by Convective Assembly", 《ACS ENERGY LETT.》 * |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111682117A (en) * | 2020-06-24 | 2020-09-18 | 合肥福纳科技有限公司 | Preparation method of quantum dot, photosensitive material layer and photovoltaic device |
| CN111682117B (en) * | 2020-06-24 | 2023-06-09 | 合肥福纳科技有限公司 | Quantum dot preparation method, photosensitive material layer and photovoltaic device |
| CN112151681A (en) * | 2020-09-25 | 2020-12-29 | 东北师范大学 | Preparation method and application of PbS quantum dot light absorption layer and solar cell |
| CN112151681B (en) * | 2020-09-25 | 2022-05-31 | 东北师范大学 | Preparation method and application of PbS quantum dot light absorption layer and solar cell |
| CN112340691A (en) * | 2020-11-11 | 2021-02-09 | 西湖大学 | Method suitable for assembling and reconstructing tiny objects on fluid interface and application thereof |
| CN112340691B (en) * | 2020-11-11 | 2023-08-22 | 西湖大学 | Method suitable for assembling and reconstructing tiny objects on fluid interface and application thereof |
| CN112447910A (en) * | 2020-11-23 | 2021-03-05 | 东北师范大学 | Quantum dot solar cell and preparation method thereof |
| CN112447910B (en) * | 2020-11-23 | 2022-03-15 | 东北师范大学 | Quantum dot solar cell and preparation method thereof |
| CN113502085A (en) * | 2021-04-11 | 2021-10-15 | 苏州大学 | Lead sulfide colloidal quantum dot ink, preparation method and application in printable solar cell |
| CN114242921A (en) * | 2021-12-09 | 2022-03-25 | 广东省科学院半导体研究所 | Luminous field effect transistor and preparation method thereof |
| CN114242921B (en) * | 2021-12-09 | 2024-02-20 | 广东省科学院半导体研究所 | Luminous field effect transistor and preparation method thereof |
| CN114316947A (en) * | 2021-12-29 | 2022-04-12 | 苏州大学 | Large-size lead sulfide quantum dot, quantum dot ink, printed solar cell and preparation method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110176541A (en) | A kind of vulcanized lead Colloidal Quantum Dots solar battery and preparation method based on convection current assembling sedimentation | |
| Chernomordik et al. | Quantum dot solar cell fabrication protocols | |
| Parize et al. | ZnO/TiO2/Sb2S3 core–shell nanowire heterostructure for extremely thin absorber solar cells | |
| KR101564390B1 (en) | High fidelity nano-structures and arrays for photovoltaics and methods of making the same | |
| Prakash | Review on nanostructured semiconductors for dye sensitized solar cells | |
| Abd-Ellah et al. | Enhancement of solar cell performance of p-Cu2O/n-ZnO-nanotube and nanorod heterojunction devices | |
| WO2004001926A2 (en) | Nano-architected/assembled solar electricity cell | |
| CN102842676B (en) | TiO2-CuInS2 core-shell nanorod array-based organic/inorganic hybrid solar battery and manufacturing method thereof | |
| CN105762286B (en) | The preparation method of counter opal structure perovskite thin film and corresponding solar battery | |
| Han et al. | Fabrication and photoelectrochemical characteristics of In2S3 nano-flower films on TiO2 nanorods arrays | |
| CN102877106A (en) | Preparing method for aluminum foil gradient wettability surface with nano coarse structure | |
| Herman et al. | Orienting periodic organic− inorganic nanoscale domains through one-step electrodeposition | |
| Park et al. | Fabrication of ordered bulk heterojunction organic photovoltaic cells using nanopatterning and electrohydrodynamic spray deposition methods | |
| Gil et al. | Spin-coating process of an inorganic Sb2S3 thin film for photovoltaic applications | |
| Su et al. | Macroscale and nanoscale morphology evolution during in situ spray coating of titania films for perovskite solar cells | |
| CN102358610A (en) | Preparation method of conductive polymer one-dimensional nanostructured array | |
| Pang et al. | UV–O 3 treated annealing-free cerium oxide as electron transport layers in flexible planar perovskite solar cells | |
| CN108767113A (en) | A kind of TiO2Nano-pillar-Au Nanocomposites array, preparation method and applications | |
| WO2010131011A1 (en) | Semiconductor thin films | |
| CN105789450B (en) | A kind of preparation method of large area homogeneous organic-inorganic perovskite thin film and its product and application | |
| Xiang et al. | Flexible solar-cell from zinc oxide nanocrystalline sheets self-assembled by an in-situ electrodeposition process | |
| CN103907196A (en) | P-type transition metal oxide-based films serving as hole transport | |
| Rased et al. | Introduction to solar energy and its conversion into electrical energy by using dye-sensitized solar cells | |
| Moon et al. | Na-mediated stoichiometry control of FeS2 thin films: suppression of nanoscale S-deficiency and improvement of photoresponse | |
| Ritruksa et al. | Surface modification of PEDOT: PSS film by chemical vapor texturing process for enhanced organic photovoltaics |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190827 |