CN110174193A - A kind of field-effect tube strain transducer - Google Patents
A kind of field-effect tube strain transducer Download PDFInfo
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- CN110174193A CN110174193A CN201910432744.3A CN201910432744A CN110174193A CN 110174193 A CN110174193 A CN 110174193A CN 201910432744 A CN201910432744 A CN 201910432744A CN 110174193 A CN110174193 A CN 110174193A
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- channel layer
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- strain transducer
- effect tube
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/12—Measuring force or stress, in general by measuring variations in the magnetic properties of materials resulting from the application of stress
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/16—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in the magnetic properties of material resulting from the application of stress
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- General Physics & Mathematics (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Hall/Mr Elements (AREA)
Abstract
The invention discloses a kind of field-effect tube strain transducer, structure includes separation layer, is set to source region, the first channel layer, drain region of upper surface of the barrier, and grid oxic horizon is arranged in the first channel layer upper surface middle part, and the second channel layer is arranged in two sides；Grid is provided on the grid oxic horizon, the drain region side is provided with drain electrode, and source is arranged in the side of the source region；First channel layer is topological insulator, and the second channel layer is magnetic material；The gate oxidation layer surface applies a downward power；Second channel layer and downward power form FM-strained-FM knot, and the FM-strained-FM knot forms FM-strained-FM-TI hetero-junctions with the first channel layer.Sensor of the invention realizes the detection application of the reduction of power consumption and the Fabry-Perot quantum interference field of dirac surface state, very useful for low-power nanoscale strain transducer.
Description
Technical field
The present invention relates to a kind of field-effect tube strain transducers, more particularly to one kind to be based on topological insulator and magnetic material
The low-power consumption field-effect tube strain transducer of hetero-junctions.
Background technique
Force-sensing sensor is a kind of sensor being widely used, and is used between the substances such as detection gas, solid, liquid mutually
The sensor of active force.Commonly it is mainly pressure resistance type force-sensing sensor and capacitive force-sensing sensor, is used as pressure resistance type and senses
The substrate or diaphragm material of device are mainly silicon wafer and germanium wafer, and based on silicon, germanium material force-sensing sensor in use with
Temperature increases in circuit, device aging is to increase device power consumption, influence sensor service life.
Summary of the invention
Goal of the invention: the present invention proposes a kind of low-power consumption field-effect tube based on topological insulator and magnetic material hetero-junctions
Strain transducer realizes the spy of the reduction of biosensor power consumption and the Fabry-Perot quantum interference field of dirac surface state
Survey application.
Technical solution: the technical scheme adopted by the invention is that a kind of field-effect tube strain transducer, including separation layer, according to
Grid is arranged in the secondary source region for being set to upper surface of the barrier, the first channel layer and drain region, the first channel layer upper surface middle part
The second channel layer is arranged in oxide layer, two sides, and the source region, the second channel layer, grid oxic horizon and the upper surface in drain region flush；Institute
It states and is provided with grid on grid oxic horizon, source is arranged in the side of the source region, and the drain region side is provided with drain electrode；It is described
First channel layer is topological insulator, and second channel layer is magnetic material；The gate oxidation layer surface applies one downwards
Power.
Preferably, the separation layer is SiO2。
Preferably, the topological insulator is three-dimensional topology insulator or three-dimensional topology crystalline insulator body.
Preferably, the three-dimensional topology insulator is Bi2Se3、Sb2Se3, InSb or Li2IrO3；Further preferably
Bi2Se3。
Preferably, the magnetic material is CrI3.
Preferably, second channel layer and downward power form FM-strained-FM knot at top.
Preferably, the FM-strained-FM knot forms FM-strained-FM-TI hetero-junctions with the first channel layer.
Working principle: add FM-strained-FM to tie to form FM- in the first channel layer topological insulator material upper surface
Strained-FM-TI hetero-junctions, by applying mechanical strain among FM-strained-FM is tied, in the feelings for keeping topological phase
Under condition, Electronic Structure and the electron transport of three-dimensional topology insulator TI and topological crystalline insulator body TCI are adjusted.Magnetic transmission meter
It calculates, including transmission, conductance and giant magnetoresistance GMR, a kind of new controllable magnetic switch of strain is predicted, wherein single or double cutoff value is answered
With strain can between the state of insulation of not GMR switching signal and 100%GMR on state.More than 100%GMR's
Energy range, strain modulation GMR display cycle property oscillation, oscillation peak and valley correspond to the Fabry-P é rot that P and AP is configured
Resonance.Therefore by the experiment measurement of strain modulating oscillation GMR, the Fabry-Perot quantum of dirac surface state can be detected
Interference.
Specifically, three-dimensional topology insulator TI is a kind of new quantum state substance, it is characterized in that the z2 rank parameter of non-trivial,
With insulation posture and shielded metallic-like surface state, TI most unusual characteristic first is that strong Quantum geometrical phase and time reversal
The helical surface that the combination of symmetry locks spin momentum has dirac fermion, and dirac fermion is TI many
The source of unusual physical characteristic.Mechanical strain can induce between common insulators or semimetal and three-dimensional topology insulator TI
Topological phase transition, strain can also adjust three-dimensional topology insulator TI and topological crystalline insulator body in the case where keeping topological phase
The Electronic Structure of TCI and electron transport.For three-dimensional topology insulator TI, a typical hydrostatic pressure allows a list
Axis compression strain, this makes monotonic decreasing of the dirac point relative to energy, just as a negative electrostatic potential.Compared with doping,
Mechanical strain allows dynamic, continuous and reversible modulation, therefore while realizing low power sensor, due to topological material and
The change in physical properties that magnetic material generates under mechanical strain passes through huge magnetic in research FM-strained-FM-TI hetero-junctions
The strain effect for hindering GMR strains modulating oscillation GMR by measurement, can go out the Fabry-of dirac surface state by accurately detecting very much
Perot quantum interference, to realize precise measurement of the sensor in quantum interference field.
The utility model has the advantages that a kind of low-power consumption field-effect tube based on topological insulator and magnetic material hetero-junctions of the invention is answered
Become sensor, it can be achieved that the task of sensor is combined with microelectronics and integrated circuit, low-power nanoscale is strained and is passed
Sensor is very useful；The Fabry-Perot quantum interference that dirac surface state can be gone out with accurately detecting, to realize sensor
Precise measurement in quantum interference field.
Detailed description of the invention
Fig. 1 is longitudinal cross-section structural schematic diagram of the invention.
Fig. 2 is the top view of top xy curved surface of the invention.
Specific embodiment
Further description of the technical solution of the present invention with reference to the accompanying drawings and examples.
Such as Fig. 1, a kind of field-effect tube strain transducer of the invention, from top to bottom comprising with flowering structure: SiO2Separation layer
1, it is set in turn in SiO2The source region 2 of 1 upper surface of separation layer, the first channel layer 3 and drain region 4,3 upper surface middle part of the first channel layer
Grid oxic horizon 5 is set, and the second channel layer 6 is arranged in two sides；Source region 2, the second channel layer 6, grid oxic horizon 5 and drain region 4 it is upper
Surface flushes；Grid 7 is provided on grid oxic horizon 5, source 8 is arranged in the side of source region 2, and 4 side of drain region is provided with drain electrode
9；First channel layer 3 is topological insulator, and the second channel layer 6 is magnetic material FM；It is downward that 5 surface of grid oxic horizon applies one
Power.
Channel layer structure includes two layers, and the first channel layer 3 is the Bi2Se3 in three-dimensional topology insulating material TI, the second ditch
Channel layer 6 is the CrI3 in magnetic material FM, and top layer forms FM-strained-FM by the second channel layer 6 and downward power and ties, in
It is FM-strained-FM knot and the first channel layer 3 formation FM-strained-FM-TI hetero-junctions.
Such as Fig. 2, channel region is divided into three parts, is biased in the x direction, in the intermediate region II that width is d, top
Portion's grid provides voltage Ug and uniform hydrostatic pressure is passed to the first channel layer 3, the plane magnetization that white arrow indicates
Rate is parallel or antiparallel with the bias in the direction x in the ferromagnetic material of left region I and right region III.
The task of sensor is combined with microelectronics and integrated circuit and establishes sensor model by the present invention, in view of low-power consumption
Nanoscale sensor is by strain modulating oscillation GMR, so as to detect the Fabry-Perot quantum interference of dirac surface state
The application in field.The model is based on topological insulator-magnetic material (FM-strained-FM-TI) hetero-junctions magnetic convection effect
It calculates, detailed process is, it is assumed that ferromagnetic region caused by closing effect has ladder boundary, utilizes Heaviside step letter
It counts to solve effective low energy Hamiltonian of surface state, then solves the magnetic convection effect that wave function derives the structure.Therefore
The gain of exchange field are as follows:
Wherein, Θ (x) is Heaviside jump function, and η is 1 and -1, the correspondence parameter for P and AP.
The potential gain of hetero-junctions describes are as follows:
V (x)=(Ug-Us)Θ(x)Θ(d-x)
Ug is voltage, and-Us is the negative potential of strain inducing.
We obtain effective low energy Hamiltonian of surface state as a result,
WhereinIt is Bi2Se3The Fermi velocity of surface state.
In view of the direction the y conservation of momentum, the direction wave function edge ± x in region j (j=I, II and III) is written as by weWhereinUsing following form:
In order to guarantee that current equation has normalized probability of happening density, we write trizonal total wave function
Are as follows:
Wave function is solved, can be obtained:
We only consider the few ballistic transport system of impurity.So in this case, the small bias under finite temperature
Electric conductivity value are as follows:
G0=e2LyThe direction/π h further considers low-down temperature, then along Y-axis, the width Ly=400nm of field-effect tube
Above-mentioned formula abbreviation are as follows:
Gη(EF, V, Mx)=G0/Tη(EF, V, Mx, ky)dky
That is:
GMR=(1-GAP/GP) × 100%
It is calculated by magnetic transport, it can be achieved that a kind of strain controllable magnetic switch effect, its insulation shape in no GMR signal
It is converted between state and the conduction state responded with 100%GMR.In addition, strain modulation Fabry-Perot resonance is in topology
Significant oscillation GMR effect is produced in the nanostructure that insulator-magnetic material is constituted.Mechanical strain allows dynamically, continuously
With reversible modulation, therefore while realizing low-power nanoscale sensor, due to the topological insulating materials of the first channel layer 3
The change in physical properties generated under mechanical strain with the magnetic material of the second channel layer 6, by studying FM-strained-FM-
The strain effect of giant magnetoresistance GMR in TI hetero-junctions, measurement strain modulating oscillation GMR, can go out dirac surface by accurately detecting very much
The Fabry-Perot quantum interference of state, to realize precise measurement of the sensor in quantum interference field.
Claims (7)
1. a kind of field-effect tube strain transducer, it is characterised in that: including separation layer (1), be set to separation layer (1) upper surface
Grid oxic horizon (5) are arranged in source region (2), the first channel layer (3) and drain region (4), the first channel layer (3) upper surface middle part,
The second channel layer (6) are arranged in two sides；The source region (2), the second channel layer (6), grid oxic horizon (5) and drain region (4) upper table
Face flushes；It is provided with grid (7) on the grid oxic horizon (5), source (8) are arranged in the side of the source region (2), the leakage
Area (4) side is provided with drain electrode (9)；First channel layer (3) is topological insulator, and second channel layer (6) is magnetism
Material；Grid oxic horizon (5) surface applies a downward power.
2. a kind of field-effect tube strain transducer according to claim 1, it is characterised in that: the separation layer (1) is
SiO2。
3. a kind of field-effect tube strain transducer according to claim 1, it is characterised in that: the topological insulator is three
Tie up topological insulator or topological crystalline insulator body.
4. a kind of field-effect tube strain transducer according to claim 3, it is characterised in that: the three-dimensional topology insulator
For Bi2Se3、Sb2Se3, InSb or Li2IrO3。
5. a kind of field-effect tube strain transducer according to claim 1, it is characterised in that: the magnetic material is
CrI3。
6. a kind of field-effect tube strain transducer according to claim 1, it is characterised in that: second channel layer (6)
FM-strained-FM knot is formed at top with downward power.
7. a kind of field-effect tube strain transducer according to claim 6, it is characterised in that: the FM-strained-FM
Knot forms FM-strained-FM-TI hetero-junctions with the first channel layer (3).
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| CN201910432744.3A CN110174193A (en) | 2019-05-23 | 2019-05-23 | A kind of field-effect tube strain transducer |
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| CN201910432744.3A CN110174193A (en) | 2019-05-23 | 2019-05-23 | A kind of field-effect tube strain transducer |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090198759A1 (en) * | 2008-02-06 | 2009-08-06 | Robert William Schmieder | Circuits for computational set theory |
| CN103094327A (en) * | 2013-02-03 | 2013-05-08 | 南京邮电大学 | Linear doped spin field-effect tube (Spin-FET) |
| CN103238101A (en) * | 2010-12-07 | 2013-08-07 | 小利兰斯坦福大学理事会 | Electrical and optical devices incorporating topological materials including topological insulators |
| CN103258858A (en) * | 2013-04-22 | 2013-08-21 | 南京邮电大学 | Grapheme nanometer stripe field-effect tube of three-material heterogeneous grid structure |
| CN104779275A (en) * | 2015-04-30 | 2015-07-15 | 湖北工业大学 | Self-excited spinning single-electron electromagnetic field effect transistor, preparation method and application |
| CN105164704A (en) * | 2013-02-05 | 2015-12-16 | 微软技术许可有限责任公司 | Topological qubit fusion |
| CN108447912A (en) * | 2018-03-27 | 2018-08-24 | 南京邮电大学 | A kind of black phosphorus field-effect tube of the heterogeneous grid structure of three materials |
-
2019
- 2019-05-23 CN CN201910432744.3A patent/CN110174193A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090198759A1 (en) * | 2008-02-06 | 2009-08-06 | Robert William Schmieder | Circuits for computational set theory |
| CN103238101A (en) * | 2010-12-07 | 2013-08-07 | 小利兰斯坦福大学理事会 | Electrical and optical devices incorporating topological materials including topological insulators |
| CN103094327A (en) * | 2013-02-03 | 2013-05-08 | 南京邮电大学 | Linear doped spin field-effect tube (Spin-FET) |
| CN105164704A (en) * | 2013-02-05 | 2015-12-16 | 微软技术许可有限责任公司 | Topological qubit fusion |
| CN103258858A (en) * | 2013-04-22 | 2013-08-21 | 南京邮电大学 | Grapheme nanometer stripe field-effect tube of three-material heterogeneous grid structure |
| CN104779275A (en) * | 2015-04-30 | 2015-07-15 | 湖北工业大学 | Self-excited spinning single-electron electromagnetic field effect transistor, preparation method and application |
| CN108447912A (en) * | 2018-03-27 | 2018-08-24 | 南京邮电大学 | A kind of black phosphorus field-effect tube of the heterogeneous grid structure of three materials |
Non-Patent Citations (1)
| Title |
|---|
| LINGZHI LI.ETC: "Topological Insulator GMR Straintronics for Low-Power Strain Sensors", 《ACS APPLIED MATERIALS & INTERFACES》 * |
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Application publication date: 20190827 |