CN110165006B - Complementary crystalline silicon photovoltaic cell of polarity connects group - Google Patents
Complementary crystalline silicon photovoltaic cell of polarity connects group Download PDFInfo
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- CN110165006B CN110165006B CN201910521130.2A CN201910521130A CN110165006B CN 110165006 B CN110165006 B CN 110165006B CN 201910521130 A CN201910521130 A CN 201910521130A CN 110165006 B CN110165006 B CN 110165006B
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 205
- 230000000295 complement effect Effects 0.000 title claims abstract description 27
- 210000004027 cell Anatomy 0.000 claims abstract description 237
- 239000000758 substrate Substances 0.000 claims abstract description 76
- 239000004020 conductor Substances 0.000 claims abstract description 33
- 210000004457 myocytus nodalis Anatomy 0.000 claims abstract description 32
- 210000004460 N cell Anatomy 0.000 claims abstract description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 4
- 239000010703 silicon Substances 0.000 claims abstract description 4
- 238000004806 packaging method and process Methods 0.000 claims description 34
- 239000002313 adhesive film Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 21
- 238000002955 isolation Methods 0.000 claims description 19
- 230000000694 effects Effects 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000002210 silicon-based material Substances 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
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- 238000005260 corrosion Methods 0.000 claims description 2
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- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 1
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- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000017105 transposition Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229920003169 water-soluble polymer Polymers 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/044—PV modules or arrays of single PV cells including bypass diodes
- H01L31/0443—PV modules or arrays of single PV cells including bypass diodes comprising bypass diodes integrated or directly associated with the devices, e.g. bypass diodes integrated or formed in or on the same substrate as the photovoltaic cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention provides a polarity-complementary crystalline silicon photovoltaic cell connection group, which comprises a crystalline silicon photovoltaic cell, an interconnection conductor and a bypass diode, wherein the crystalline silicon photovoltaic cell comprises a P cell taking a P-type silicon wafer as a substrate and an N cell taking an N-type silicon wafer as a substrate, and the two cells are connected in series to form the crystalline silicon photovoltaic cell connection group; the bypass diode is integrated on the crystalline silicon photovoltaic cell. According to the invention, the battery circuit structure with complementary polarity is arranged in the crystalline silicon photovoltaic battery connection group, so that the gap between battery arrays is reduced, and the utilization rate of the area of the assembly is improved; reducing mechanical stress of the inter-cell interconnect; furthermore, a hot spot protection circuit formed by arranging a bypass diode is integrated in a battery circuit structure with a polarity complementary structure, so that the junction area of the bypass diode is large, the surge current tolerance is improved, and the failure caused by lightning induced current is prevented; the junction temperature of the diode is reduced, the structure of the junction box is simplified, and the cost of the photovoltaic module is reduced.
Description
Technical Field
The invention relates to the technical field of crystalline silicon photovoltaic modules, in particular to a polarity complementary crystalline silicon photovoltaic cell connection group.
Background
In the prior art, a crystalline silicon photovoltaic cell connection group (hereinafter referred to as a cell connection group) is formed by serially connecting cells with the same polarity, and a discrete bypass diode needs to be externally connected to protect the hot spot effect of the cells or cell strings.
One prior art approach to the integrated fabrication of bypass diodes on crystalline silicon photovoltaic cells requires "transposition" of the polarity of the bypass diode, i.e., the positive and negative electrodes of the bypass diode are arranged in opposition to the parasitic crystalline silicon photovoltaic cell, to facilitate access to the bypass diode.
In order to fully utilize the illumination area, the prior art also adopts a 'lap joint' method to realize the interconnection of the cells among the cells so as to improve the area utilization rate of the photovoltaic module.
The defects of the prior art are as follows:
1) for the crystalline silicon photovoltaic cell with the cell extraction electrodes respectively designed on the upper surface and the substrate surface of the cell, because the cell connection group is formed by connecting cells with the same polarity in series, the interconnection conductor of the series-connected cell needs to be connected to the substrate electrode of the cell B through the doped layer electrode of the cell A in a bending mode, and the doped layer electrode of the cell B is connected to the substrate electrode of the cell C in a bending mode, … …. This interconnection method requires that sufficient gaps are left between the cells for the interconnection conductors to pass through, so that the effective power generation area of the module is reduced, and the photoelectric conversion efficiency of the module is reduced; because the interconnection conductor is folded from the upper surface of the battery A to the substrate surface of the battery B, mechanical stress is easily introduced to the edge of the battery, and cracks and hidden cracks of a battery piece are easily caused;
2) in the prior art, a bypass diode is arranged in an external junction box as a discrete device, and due to volume and cost limitation, the chip area of the bypass diode cannot be designed to be large enough, so that the overcurrent prevention capability of the bypass diode is low, and the components cannot normally work due to overcurrent burning of the bypass diode caused by lightning induction;
3) the external bypass diode has smaller tube core area and more serious heating, and is an important reason for fire;
4) the junction box for accommodating the external discrete bypass diode device has large volume, complex structure and higher cost;
5) in view of the cost of the junction box and the difficulty in implementation, the number of bypass diodes in the prior art cannot be designed too much, and the hot spot protection effect of the photovoltaic module in a complex installation environment is not ideal.
6) The adoption of the lapping method to realize the interconnection of the batteries has the defects of waste of battery area and higher mechanical stress among the batteries.
For example, patent No. 201110007744.2 discloses a method for manufacturing a crystalline silicon solar cell module with a bypass diode, which comprises printing a slurry on a local region of a crystalline silicon solar cell, forming a bypass diode with a p-n junction direction identical to that of a main solar cell in the local region of a crystalline silicon wafer after sintering, isolating the bypass diode from the main solar cell to obtain a crystalline silicon solar cell with a bypass diode, and connecting the prepared solar cells into a module through an interconnector. According to the scheme, the bypass diode is formed in the local area of the crystalline silicon solar cell, the one-way conductivity of the bypass diode is remarkable through testing, the solar cell prepared by the method is convenient to package, after the solar cell is connected into the assembly through the interconnector, each solar cell in the assembly is connected with the bypass diode in parallel, when the single solar cell is shielded or fails, the bypass diode bypasses the solar cell, the loss of the output power of the assembly is reduced, and the working stability of the assembly is ensured.
The crystalline silicon solar cell is the crystalline silicon photovoltaic cell.
According to the specification and the attached drawings of the patent, the isolation technology of the bypass diode is complex and high in cost to realize the function. Because the depth of the doped PN junction of the crystalline silicon photovoltaic cell in the prior art is mostly only on the order of nanometers or microns, and the thickness of the substrate is about 150 microns, the bypass diode and the substrate shared by the crystalline silicon photovoltaic cell are isolated without being separated, so that the crystalline silicon photovoltaic cell is not easy to realize industrially. If the common substrate is not isolated, the connection short circuit can be caused after the circuit connection is carried out according to the structure described by the scheme, and the assembly can not work normally; or the short-circuited connection is removed, the hot spot bypass protection can be implemented on only part of the batteries or the battery strings.
Disclosure of Invention
In view of the above problems, an object of the present invention is to provide a complementary-polarity crystalline silicon photovoltaic cell connection set and a complementary-polarity bypass diode connection method, which are used to achieve effective hot spot protection for all cells in the cell connection set, and further, if a connection method is used in which P cells and N cells are connected in series at intervals (i.e., the P cell is necessary to be directly connected to the P cell, and the P cell is necessary to be directly connected to the N cell), then for the cells with substrate electrodes and doped layer electrodes arranged on different surfaces, when the cells are connected in series, the interconnection conductor is parallel to the plane of the cell, and does not need to be bent from the doped layer electrode of the cell a to the substrate electrode of the cell b, and from the doped layer electrode of the cell b to the substrate electrode of the cell c, … …, so that the interconnection conductor does not need to pass through the required gap between the cells, a compact arrangement is achieved.
Another object of the present invention is to provide a method for integrating a bypass diode on a crystalline silicon photovoltaic cell and a method for connecting the bypass diode integrated on the crystalline silicon photovoltaic cell into a cell connection set, by using the integrated bypass diodes, when a cell in a crystalline silicon photovoltaic module generates a hot spot effect, the cell generating the hot spot effect can be effectively bypassed, so as to ensure the safety of the module and less power loss.
By means of the topological connection of the crystalline silicon photovoltaic cells with complementary polarities and the integrated bypass diode, the aim of effectively protecting all crystalline silicon photovoltaic cells or sub-cell strings in the module by hot spot effect bypass can be conveniently achieved.
In order to achieve the purpose, the invention adopts the following technical scheme:
a connection group of a crystalline silicon photovoltaic cell with complementary polarity comprises a plurality of crystalline silicon photovoltaic cells connected in series,
the crystalline silicon photovoltaic cell comprises a substrate, a substrate electrode is arranged on the surface of the substrate, a doping layer is arranged on the substrate, the doping layer and the substrate form a crystalline silicon photovoltaic cell PN junction, a doping layer electrode is arranged on the surface of the doping layer, and the substrate electrode and the doping layer electrode are two electrodes of the crystalline silicon photovoltaic cell PN junction;
the crystalline silicon photovoltaic cell connection group comprises two crystalline silicon photovoltaic cells, namely a P cell and an N cell;
a bypass diode is integrated in the crystalline silicon photovoltaic cell, and comprises a P bypass diode integrated on the P cell and an N bypass diode integrated on the N cell;
the crystalline silicon photovoltaic cell connection group comprises a P bypass diode and an N bypass diode;
the method comprises the following steps that a plurality of crystalline silicon photovoltaic cells are divided into a plurality of sub-cell strings, the number of the sub-cell strings is 1, 2, 3, …, Z sub-cell strings are provided, wherein Z is larger than or equal to 2, and each sub-cell string comprises one or more crystalline silicon photovoltaic cells;
each sub-cell string is in anti-parallel connection with a bypass diode integrated on a crystalline silicon photovoltaic cell adjacent to one end of the sub-cell string in series, and the bypass diode integrated on the crystalline silicon photovoltaic cell provides hot spot effect bypass protection for the sub-cell string.
Further, the crystalline silicon photovoltaic cell integrated with the bypass diode comprises a doping layer positioned on the same substrate, a crystalline silicon photovoltaic cell PN junction and a bypass diode PN junction are formed between the doping layer and the substrate, a doping layer electrode of the crystalline silicon photovoltaic cell is arranged on the surface of the doping layer of the crystalline silicon photovoltaic cell PN junction, and a doping layer second electrode of the bypass diode is arranged on the surface of the doping layer of the bypass diode PN junction; the bypass diode PN junction and the crystalline silicon photovoltaic cell PN junction share the same substrate and substrate electrode.
Further, an isolation groove is arranged between the crystalline silicon photovoltaic cell, the bypass diode PN junction and the corresponding doping layer, and the isolation groove can be obtained through laser processing or corrosion processing.
Further, an insulation medium is filled in an isolation groove between the PN junction of the crystalline silicon photovoltaic cell and the PN junction of the bypass diode and between the corresponding doped layers, and the insulation medium is formed when a passivation film and an antireflection film are prepared in the later process of cell manufacturing.
Furthermore, silicon material isolation with the same conductivity type as that of the substrate exists between the PN junction of the crystalline silicon photovoltaic cell and the PN junction of the bypass diode and the corresponding doped layer, and the silicon material with the same conductivity type as that of the substrate is formed by performing area selective doping on the substrate silicon wafer in advance in the doping process.
Furthermore, the upper surface and the lower surface of the bypass diode are respectively covered with black glue films.
Further, the serial numbers of the crystalline silicon photovoltaic cells from the positive electrode to the negative electrode of the crystalline silicon photovoltaic cell connection group are respectively 1, 2, … and N, wherein the crystalline silicon photovoltaic cells with the numbers of i-m (i is more than 1 and less than or equal to m and less than N) are provided with hot spot protection circuits of sub-cell strings, and each hot spot protection circuit comprises a second electrode of a doped layer of a P bypass diode integrated on the P cell with the number of (m +1) and connected with the positive electrode of the crystalline silicon photovoltaic cell with the number of i; or the negative electrode of the crystalline silicon photovoltaic cell with the label m is connected to the doped layer second electrode of the N bypass diode integrated on the N cell with the label (i-1);
the hot spot protection circuit of the first string of sub-battery strings with the labels of 1-j (j is more than or equal to 1 and less than N) and the last string of sub-battery strings with the labels of k-N (k is more than 1 and less than or equal to N) can only be selected from the two hot spot protection circuits.
Further, each sub-battery string in the crystalline silicon photovoltaic battery connection group only comprises one crystalline silicon photovoltaic battery, each crystalline silicon photovoltaic battery in the crystalline silicon photovoltaic battery connection group is alternately connected in series with an N battery according to P batteries, the positive pole line end of the crystalline silicon photovoltaic battery connection group is a doped layer electrode of the N battery, a substrate electrode of the N battery is connected in series with a substrate electrode of the P battery through an interconnection conductor, the doped layer electrode of the P battery is connected in series with a doped layer electrode of the N battery connected in sequence through the interconnection conductor, and the like, … …, and finally the negative pole line end of the crystalline silicon photovoltaic battery connection group is a P battery doped layer electrode;
the connection relation of bypass diodes in the crystalline silicon photovoltaic cell connection group is as follows: taking one of an N battery integrated with an N bypass diode and a P battery integrated with a P bypass diode in a crystalline silicon photovoltaic battery connection group, and connecting a second electrode of a doped layer of the N bypass diode integrated on the N battery to an electrode of a doped layer of the P battery; and complementarily, connecting a second electrode of a doped layer of a P bypass diode integrated on the P battery to a doped layer electrode of the N battery to form a complementary crystalline silicon photovoltaic battery circuit structure taking the doped layer electrode of the N battery as a positive electrode and the doped layer electrode of the P battery as a negative electrode, and connecting the complementary crystalline silicon photovoltaic battery circuit structure as a basic unit in series to form a complete crystalline silicon photovoltaic battery connection group.
Further, the P cell may be a parallel group of two or more P cells, and the N cell may be a parallel group of two or more N cells.
Further, a packaging adhesive film is arranged outside the crystalline silicon photovoltaic cell connection group, the packaging adhesive film comprises a first packaging adhesive film and a second packaging adhesive film, the first packaging adhesive film is located above the main light receiving surface of each crystalline silicon photovoltaic cell, the second packaging adhesive film is located below the secondary light receiving surface or the non-light receiving surface of each crystalline silicon photovoltaic cell, a front panel is arranged on the outer side of the first packaging adhesive film, a back panel is arranged on the outer side of the second packaging adhesive film, a junction box is arranged on the outer side of the back panel after lamination packaging, an interconnection conductor communicated with the crystalline silicon photovoltaic cell connection group is arranged in the junction box, a bypass diode is not arranged in the junction box, and the crystalline silicon photovoltaic cell connection group forms a complete photovoltaic crystalline silicon module with complementary polarity through the packaging adhesive film, the front panel, the back panel and the.
Compared with the prior art, the invention has the beneficial effects that:
1) according to the scheme, the isolation of the bypass diode is realized through the polarity complementary structure of the bypass diode, the process is simple, the connection is simple and convenient, and the hot spot effect bypass protection can be independently implemented on any small sub-battery string, so that the photovoltaic module is more suitable for various complex installation occasions, and the application range of the photovoltaic module is enlarged;
2) compared with an external discrete device bypass diode, the integrated bypass diode in the scheme of the invention has the advantages of large tube core area, strong overcurrent resistance and difficult lightning induction burnout;
3) for the crystalline silicon photovoltaic cells of the upper and lower surfaces of the cell at the electrode part of the substrate and the electrode part of the doped layer, all the interconnection wires do not need to shuttle between two planes of the cell any more, so that the mechanical stress of interconnection between the cells can be reduced, and the generation of cracks is reduced; the method is beneficial to developing thinner batteries, not only reduces the consumption of silicon materials, but also can improve the photoelectric conversion efficiency of the photovoltaic battery; the invention can also reduce the interval of battery arrangement and improve the utilization rate of the area of the assembly;
4) the simplification of the connection line between the batteries in the scheme of the invention is beneficial to the mechanical operation and automation of the battery production, improves the product quality, improves the productivity and reduces the manufacturing cost;
5) the bypass diode of integrated design can simplify terminal box structure and volume, improves crystalline silicon photovoltaic module integrated level, reduces terminal box and crystalline silicon photovoltaic module cost.
6) Compared with the prior art of patent No. 201110007744.2, the invention adopts different isolation technologies of the bypass diode and the cell, and the isolation technology of the bypass diode and the crystalline silicon photovoltaic cell is simpler due to the adoption of the cell with complementary polarity. Patent No. 201110007744.2 if the isolation technique of the bypass diode and the crystalline silicon photovoltaic cell of this patent is used, it can be seen from the drawings of this invention that the circuit of the module is short-circuited and the whole module cannot work.
Drawings
FIG. 1 is a schematic cross-sectional view of a crystalline silicon photovoltaic cell integrated with a bypass diode, wherein a substrate electrode and a doped layer electrode of the cell are respectively arranged on two sides of the cell, and the crystalline silicon photovoltaic cell is isolated from a PN junction and the doped layer of the bypass diode by virtue of an isolation groove and an insulating medium;
FIG. 2 is a second schematic cross-sectional view of a crystalline silicon photovoltaic cell integrated with a bypass diode, wherein a substrate electrode and a doped layer electrode of the cell are both located on a non-main light receiving surface of the cell, and the crystalline silicon photovoltaic cell is isolated from a PN junction and the doped layer of the bypass diode by a substrate material;
FIG. 3 is a schematic diagram of the connection relationship of a complementary polarity crystalline silicon photovoltaic cell connection set, each cell forming a string of subcells;
FIG. 4 is an equivalent circuit of a basic cell of a complementary crystalline silicon photovoltaic cell circuit structure of FIG. 3;
FIG. 5 is a schematic diagram of the connection of a complementary polarity crystalline silicon photovoltaic cell connection set, with 20 cells forming a string of subcells;
FIG. 5-1 is a left side view of FIG. 5;
FIG. 6 is an equivalent circuit of FIG. 5;
fig. 7 is a schematic view of a crystalline silicon photovoltaic module comprising a connected set of complementary polarity crystalline silicon photovoltaic cells of the present invention.
Reference numerals:
1. a crystalline silicon photovoltaic cell; 101. a P cell; 102. an N cell; 103. a PN junction of the crystalline silicon photovoltaic cell; 111. a substrate; 112. doping layer; 113. a substrate electrode; 114. doping layer electrodes; 115. a second electrode of the doped layer; 117. an isolation trench; 118. an insulating medium; 12. a bypass diode 121, P bypass diode; 122. an N bypass diode; 123. a bypass diode PN junction;
2. a battery connection group; 21. a string of sub-cells; 211. a first sub-battery string; 212. a second sub-battery string; 213. a third sub-battery string; 22. a connecting conductor; 221. a substrate electrode connection conductor; 222. the electrode of the doped layer is connected with a conductor; 223. the second electrode of the doped layer is connected with the conductor; 241. a positive electrode lead-out terminal; 242. a negative electrode lead-out terminal;
3. a crystalline silicon photovoltaic module with complementary polarity; 31. a front panel; 32. packaging the adhesive film; 321. a first packaging adhesive film; 322. a second packaging adhesive film; 33. a back panel; 34. a junction box.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects solved by the present invention more apparent, the present invention is further described in detail below with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Example 1:
as shown in conjunction with figures 1, 3 and 4,
a complementary polarity crystalline silicon photovoltaic cell connection group 2 comprises a plurality of crystalline silicon photovoltaic cells 1 connected in series,
the crystalline silicon photovoltaic cell 1 comprises a substrate 111, a substrate electrode 113 is arranged on the surface of the substrate 111, a doped layer 112 is arranged on the substrate 111, the doped layer 112 and the substrate 111 form a crystalline silicon photovoltaic cell PN junction 103, a doped layer electrode 114 is arranged on the surface of the doped layer 112, and the substrate electrode 113 and the doped layer electrode 114 are two electrodes of the crystalline silicon photovoltaic cell PN junction 103;
the crystalline silicon photovoltaic cell connection group 2 comprises two crystalline silicon photovoltaic cells 1 of a P cell 101 and an N cell 102;
a bypass diode 12 is integrated in the crystalline silicon photovoltaic cell 1, the bypass diode 12 comprises a P bypass diode 121 integrated on the P cell 101 and an N bypass diode 122 integrated on the N cell 102;
the crystalline silicon photovoltaic cell connection group 2 comprises a P bypass diode 121 and an N bypass diode 122;
the plurality of crystalline silicon photovoltaic cells 1 are divided into a plurality of sub-cell strings 21 (each sub-cell string in the attached figure 3 only comprises one crystalline silicon photovoltaic cell), the number of the sub-cell strings 21 is 1, 2, 3, …, Z sub-cell strings 21, wherein Z is more than or equal to 2, each sub-cell string 21 comprises one or more crystalline silicon photovoltaic cells 1,
each sub-cell string 21 is in an anti-parallel connection relationship with the bypass diode 12 integrated on one crystalline silicon photovoltaic cell 1 with one end thereof being adjacent in series, and the bypass diode 12 integrated on the crystalline silicon photovoltaic cell 1 provides hot spot effect bypass protection for the sub-cell string 21.
By means of the topological connection of the crystalline silicon photovoltaic cells 1 with complementary polarity and the integrated bypass diode 12, the aim of effectively protecting all crystalline silicon photovoltaic cells 1 or sub-cell strings 21 in the module from hot spot effect bypass can be achieved conveniently.
The crystalline silicon photovoltaic cell 1 integrated with the bypass diode 12 comprises a doped layer 112 located on the same substrate 111, a crystalline silicon photovoltaic cell PN junction 103 and a bypass diode PN junction 123 are formed between the doped layer 112 and the substrate 111, a doped layer electrode 114 of the crystalline silicon photovoltaic cell 1 is arranged on the surface of the doped layer 112 of the crystalline silicon photovoltaic cell PN junction 103, and a doped layer second electrode 115 of the bypass diode 12 is arranged on the surface of the doped layer 112 of the bypass diode PN junction 123; the bypass diode PN junction 123 and the crystalline silicon photovoltaic cell PN junction 103 share the same substrate 111 and substrate electrode 113.
An isolation groove 117 is arranged between the crystalline silicon photovoltaic cell 1 and the bypass diode PN junction 123 and the corresponding doping layer 112, and the isolation groove 117 can be obtained by laser processing or etching processing. An isolation groove 117 between the PN junction 103 and the PN junction 123 of the bypass diode of the crystalline silicon photovoltaic cell and the corresponding doping layer 112 is filled with an insulating medium 118, and the insulating medium 118 is formed when a passivation and antireflection film is prepared in the later process of cell manufacturing.
The P cell 101 may be a parallel group of two or more P cells 101, and the N cell 102 may be a parallel group of two or more N cells 102.
Example 2:
as shown in conjunction with figures 1, 3 and 4,
the crystalline silicon photovoltaic cells 1 in the crystalline silicon photovoltaic cell connection group 2 are alternately connected in series according to the P cells 101 and the N cells 102, the positive terminal 241 of the crystalline silicon photovoltaic cell connection group is the doped layer electrode 114 of one N cell 102, the substrate electrode 113 of the N cell 102 is connected in series with the substrate electrode 113 of one P cell 101 through the interconnection conductor 221, the doped layer electrode 114 of the P cell 101 is connected in series with the doped layer electrode 114 of the N cell 102 connected in the following through the interconnection conductor 222, and so on, … …, and finally the negative terminal 242 of the crystalline silicon photovoltaic cell connection group 2 is the doped layer electrode 114 of one P cell 101.
Connection of bypass diode 12 in example 2: taking one of an N cell 102 integrated with an N bypass diode 122 and one of P cells 101 integrated with a P bypass diode 121 in a crystalline silicon photovoltaic cell connection group 2, and connecting a doped layer second electrode 115 of the N bypass diode 122 integrated on the N cell 102 to a doped layer electrode 114 of the P cell 101; complementarily, the doped layer second electrode 115 of the P bypass diode 121 integrated on the P cell 101 is connected to the doped layer electrode 114 of the N cell 102, so as to form a complementary crystalline silicon photovoltaic cell circuit structure with the doped layer electrode 114 of the N cell 102 as the positive electrode and the doped layer electrode 114 of the P cell 101 as the negative electrode, and the complementary crystalline silicon photovoltaic cell circuit structure is used as a basic unit and is connected in series to form a complete crystalline silicon photovoltaic cell connection group.
Example 3:
as shown in fig. 1, 5 and 6, a complementary-polarity crystalline silicon photovoltaic cell connection group comprises a crystalline silicon photovoltaic cell 1, a connection conductor 22 (including a substrate electrode connection conductor 221, a doped layer electrode connection conductor 222 and a doped layer second electrode connection conductor 223), and a bypass diode 12, wherein the crystalline silicon photovoltaic cell 1 comprises a P cell 101 and an N cell 102, and the bypass diode 12 is a P bypass diode 121 integrated on the P cell 101 and an N bypass diode 122 integrated on the N cell 102 respectively.
The P batteries 101 and the N batteries 102 are connected in series at intervals to form a battery connection group, and according to the parallel connection relation with the bypass diode 12, 60 batteries are divided into three sub-battery strings including a first sub-battery string 211, a second sub-battery string 212 and a third sub-battery string 213;
the series connection sequence of the batteries in the battery connection group in this embodiment is: battery connection group positive electrode lead-out 241 → battery P1 substrate electrode 113 → battery P1 doped layer electrode 114 → doped layer electrode connection conductor 222 → battery N2 doped layer electrode 114 → battery N2 substrate electrode 113 → substrate electrode connection conductor 221 → battery P3 substrate electrode 113 → battery P3 doped layer electrode 114, …, → battery N60 doped layer electrode 114 → battery N60 substrate electrode 113 → connection group negative electrode 242.
In the embodiment, the battery substrate electrode 113 and the doped layer electrode 114 are respectively arranged on two surfaces of the battery, and the battery connection group is formed by connecting the P battery and the N battery in series at intervals.
In this embodiment, three batteries are integrated with bypass diodes, and the serial numbers thereof are respectively: n20, P41 and N40, wherein the N bypass diode 122 integrated on the N cell 102 with serial number N20 is connected in anti-parallel with the sub cell string 211, the P bypass diode 121 integrated on the P cell 101 with serial number P41 is connected in anti-parallel with the sub cell string 212, and the N bypass diode 122 integrated on the N cell 102 with serial number N40 is connected in anti-parallel with the sub cell string 213, and the diodes respectively provide hot spot protection for the corresponding sub cell strings.
In the present embodiment, generally, the numbers of the crystalline silicon photovoltaic cells 1 from the positive electrode to the negative electrode in the crystalline silicon photovoltaic cell connection group 2 are respectively 1, 2, … and N, wherein the crystalline silicon photovoltaic cells 1 with the numbers i to m (1 < i ≦ m < N) are provided with the hot spot protection circuit of the sub-cell string 21, and the hot spot protection circuit comprises a doped layer second electrode 115 formed by connecting the positive electrode of the crystalline silicon photovoltaic cell 1 with the number i to the P cell 101 with the number (m +1) and integrated with the P bypass diode 121; or from the negative electrode of crystalline silicon photovoltaic cell 1, numbered m, to the doped layer second electrode 115 of the N bypass diode 122 integrated on the N cell 102, numbered (i-1);
the hot spot protection circuit of the first string of sub-battery strings 21 with the labels of 1-j (j is more than or equal to 1 and less than N) and the last string of sub-battery strings 21 with the labels of k-N (k is more than 1 and less than or equal to N) can be selected from the two hot spot protection circuits.
In the present embodiment, the crystalline silicon photovoltaic cell 1 is a monolithic cell, without parallel cells.
Example 4:
shown in the attached fig. 2, fig. 3 and fig. 4.
The crystalline silicon photovoltaic cell 1 in the present embodiment has an all-back electrode structure. Silicon materials with the same conductivity type as that of the substrate 111 are isolated between the crystalline silicon photovoltaic cell PN junction 103, the bypass diode PN junction 123 and the corresponding doping layer 112, and the silicon materials with the same conductivity type as that of the substrate 111 are formed by performing area selective doping on the substrate 111 in advance in the doping process. The upper surface and the lower surface of the bypass diode 12 are respectively covered with a black glue film.
The crystalline silicon photovoltaic cell 1 with the full back electrode structure, namely the substrate electrode 113, the doped layer electrode 114 and the doped layer second electrode 115 of the crystalline silicon photovoltaic cell 1 are all positioned on a non-light-receiving surface or a non-main light-receiving surface of the crystalline silicon photovoltaic cell 1, and the bypass diode 12 and the crystalline silicon photovoltaic cell 1 integrated with the bypass diode form an isolation strip 117 by means of crystalline silicon of the same conductivity type as the substrate 11. The crystalline silicon photovoltaic cell 1 with the structure is also suitable for the series connection structure of the cell connection group described in the embodiment 2, and the technical effect same as that of the technical scheme of the embodiment 2 is obtained. What is different from the cell connection group in example 2 is that each of the substrate electrode connection conductor 221, the doped layer electrode connection conductor 222, and the doped layer second electrode connection conductor 223 included in the cell connection group constituted by the crystalline silicon photovoltaic cell 1 having the all-back electrode structure is located on the same plane and on the non-light-receiving surface or the non-main light-receiving surface of the crystalline silicon photovoltaic cell 1.
Example 5:
shown in the attached fig. 2, fig. 5 and fig. 6.
The crystalline silicon photovoltaic cell 1 in the embodiment 3 is completely replaced by the crystalline silicon photovoltaic cell 1 with the full back electrode, and the hot spot protection circuit scheme of the embodiment 4 is combined, and the hot spot protection circuit has the same technical effect as the technical scheme of the embodiment 4. The difference is that the water-soluble polymer is,
1) all the connecting conductors 22 (including the substrate electrode connecting conductor 221, the doped layer electrode connecting conductor 222, and the doped layer second electrode connecting conductor 223) are located on the same plane, and are located on a backlight surface of the crystalline silicon photovoltaic cell 1, where the backlight surface is a non-light-receiving surface or a non-main light-receiving surface of the crystalline silicon photovoltaic cell 1.
2) Referring to fig. 5 and 6, because the crystalline silicon photovoltaic cell 1 is of an all-back-electrode structure, the crystalline silicon photovoltaic cell 1 can be closely arranged regardless of the conductivity type of the substrate 11 except the cells with the reference numbers N20, P21 and N40, which need to provide the bypass diode 12, and the cells do not need to leave gaps between the cells for the connection conductors to pass through. And the number of the required complementary batteries is reduced, and the method is more beneficial to industrial production.
Example 6:
as shown in fig. 7, a packaging adhesive film 32 is disposed outside the crystalline silicon photovoltaic cell connection group 2, the packaging adhesive film 32 includes a first packaging adhesive film 321 and a second packaging adhesive film 322, the first packaging adhesive film 321 is located above a main light receiving surface of each crystalline silicon photovoltaic cell 1, the second packaging adhesive film 322 is located below a sub light receiving surface or a non light receiving surface of each crystalline silicon photovoltaic cell 1, a front panel 31 is disposed outside the first packaging adhesive film 321, a back panel 33 is disposed outside the second packaging adhesive film 322, a junction box 34 is mounted outside the back panel 33 after lamination packaging, an interconnection conductor communicated with the crystalline silicon photovoltaic cell connection group is disposed in the junction box 34, and a bypass diode is not disposed in the junction box 34. The crystalline silicon photovoltaic cell connection group forms a complete crystalline silicon photovoltaic module with complementary polarity through the packaging adhesive film 32, the front panel 31, the back panel 33 and the junction box 34.
Although the present invention has been described in detail with reference to the preferred embodiments, it will be understood by those skilled in the art that various changes, modifications and equivalents may be made therein without departing from the spirit and scope of the invention.
Claims (10)
1. A complementary crystalline silicon photovoltaic cell of polarity connects group, includes a plurality of crystalline silicon photovoltaic cells of establishing ties, its characterized in that:
the crystalline silicon photovoltaic cell comprises a substrate, a substrate electrode is arranged on the surface of the substrate, a doping layer is arranged on the substrate, the doping layer and the substrate form a crystalline silicon photovoltaic cell PN junction, a doping layer electrode is arranged on the surface of the doping layer, and the substrate electrode and the doping layer electrode are two electrodes of the crystalline silicon photovoltaic cell PN junction;
the crystalline silicon photovoltaic cell connection group comprises two crystalline silicon photovoltaic cells, namely a P cell and an N cell;
a bypass diode is integrated in the crystalline silicon photovoltaic cell, and comprises a P bypass diode integrated on the P cell and an N bypass diode integrated on the N cell;
the crystalline silicon photovoltaic cell connection group comprises a P bypass diode and an N bypass diode;
the method comprises the following steps that a plurality of crystalline silicon photovoltaic cells are divided into a plurality of sub-cell strings, the number of the sub-cell strings is 1, 2, 3, …, Z sub-cell strings are provided, wherein Z is larger than or equal to 2, and each sub-cell string comprises one or more crystalline silicon photovoltaic cells;
each sub-cell string is in anti-parallel connection with a bypass diode integrated on one crystalline silicon photovoltaic cell adjacent to one end of the sub-cell string in series;
the connection relation of bypass diodes in the crystalline silicon photovoltaic cell connection group is as follows: taking one of an N battery integrated with an N bypass diode and a P battery integrated with a P bypass diode in a crystalline silicon photovoltaic battery connection group, and connecting a second electrode of a doped layer of the N bypass diode integrated on the N battery to an electrode of a doped layer of the P battery; complementarily, a second electrode of a doped layer of a P bypass diode integrated on the P battery is connected to a doped layer electrode of the N battery, a complementary crystalline silicon photovoltaic battery circuit structure with the doped layer electrode of the N battery as a positive electrode and the doped layer electrode of the P battery as a negative electrode is formed, and the complementary crystalline silicon photovoltaic battery circuit structure is used as a basic unit and is connected in series to form a complete crystalline silicon photovoltaic battery connection group;
and the bypass diode integrated on the crystalline silicon photovoltaic cell provides hot spot effect bypass protection for the sub-cell string.
2. The connecting group of complementary-polarity crystalline silicon photovoltaic cells as claimed in claim 1, wherein: the crystalline silicon photovoltaic cell integrated with the bypass diode comprises a doping layer positioned on the same substrate, a crystalline silicon photovoltaic cell PN junction and a bypass diode PN junction are formed between the doping layer and the substrate, a doping layer electrode of the crystalline silicon photovoltaic cell is arranged on the surface of the doping layer of the crystalline silicon photovoltaic cell PN junction, and a doping layer second electrode of the bypass diode is arranged on the surface of the doping layer of the bypass diode PN junction; the bypass diode PN junction and the crystalline silicon photovoltaic cell PN junction share the same substrate and substrate electrode.
3. The connecting group of complementary-polarity crystalline silicon photovoltaic cells as claimed in claim 2, wherein: and an isolation groove is arranged between the crystalline silicon photovoltaic cell and the PN junction of the bypass diode and between the crystalline silicon photovoltaic cell and the corresponding doped layer, and the isolation groove is obtained by laser processing or corrosion processing.
4. A complementary-polarity crystalline silicon photovoltaic cell connection pack as claimed in claim 3, wherein: an isolation groove between the PN junction of the crystalline silicon photovoltaic cell and the PN junction of the bypass diode and between the corresponding doped layers is filled with an insulating medium, and the insulating medium is formed when a passivation film and an antireflection film are prepared in the later process of cell manufacturing.
5. The connecting group of complementary-polarity crystalline silicon photovoltaic cells as claimed in claim 2, wherein: silicon material isolation with the same conductivity type as that of the substrate exists between the PN junction of the crystalline silicon photovoltaic cell and the PN junction of the bypass diode and the corresponding doped layer, and the silicon material with the same conductivity type as that of the substrate is formed by performing area selective doping on the substrate silicon wafer in advance in the doping process.
6. The connecting group of complementary-polarity crystalline silicon photovoltaic cells as claimed in claim 2, wherein: the upper surface and the lower surface of the bypass diode are respectively covered with a black glue film.
7. The connecting group of complementary-polarity crystalline silicon photovoltaic cells as claimed in claim 1, wherein: the serial numbers of all crystalline silicon photovoltaic cells from the positive electrode to the negative electrode in the crystalline silicon photovoltaic cell connection group are respectively 1, 2, … and N, wherein a hot spot protection circuit of a sub-cell string is arranged in the crystalline silicon photovoltaic cell with the mark number of i-m (i is more than 1 and less than or equal to m and less than N), and the hot spot protection circuit comprises a second electrode of a doped layer of a P bypass diode integrated on a P cell with the mark number of (m +1) connected with the positive electrode of the crystalline silicon photovoltaic cell with the mark number of i; or the negative electrode of the crystalline silicon photovoltaic cell with the label m is connected to the doped layer second electrode of the N bypass diode integrated on the N cell with the label (i-1);
the hot spot protection circuit of the first string of sub-battery strings with the labels of 1-j (j is more than or equal to 1 and less than N) and the last string of sub-battery strings with the labels of k-N (k is more than 1 and less than or equal to N) can only be selected from the two hot spot protection circuits.
8. The connecting group of complementary-polarity crystalline silicon photovoltaic cells as claimed in claim 1, wherein: each sub-battery string in the crystalline silicon photovoltaic battery connection group only comprises one crystalline silicon photovoltaic battery, each crystalline silicon photovoltaic battery in the crystalline silicon photovoltaic battery connection group is alternately connected in series with an N battery according to P batteries, the positive pole line end of the crystalline silicon photovoltaic battery connection group is a doped layer electrode of the N battery, a substrate electrode of the N battery is connected in series with a substrate electrode of the P battery through an interconnection conductor, the doped layer electrode of the P battery is connected in series with a doped layer electrode of the N battery connected behind the P battery through the interconnection conductor, and the like, … …, and finally the negative pole line end of the crystalline silicon photovoltaic battery connection group is a P battery doped layer electrode.
9. The connecting group of complementary-polarity crystalline silicon photovoltaic cells as claimed in claim 1, wherein said P-cells are parallel groups of two or more P-cells and said N-cells are parallel groups of two or more N-cells.
10. A complementary-polarity crystalline silicon photovoltaic cell connection pack as claimed in claim 1, the solar cell packaging structure is characterized in that packaging adhesive films are arranged outside the crystalline silicon photovoltaic cell connection group, the packaging adhesive films comprise a first packaging adhesive film and a second packaging adhesive film, the first packaging adhesive film is positioned above the main light-receiving surface of each crystalline silicon photovoltaic cell, the second packaging adhesive film is positioned below the secondary light-receiving surface or the non-light-receiving surface of each crystalline silicon photovoltaic cell, the outer side of the first packaging adhesive film is provided with a front panel, the outer side of the second packaging adhesive film is provided with a back panel, after lamination packaging, the outer side of the back panel is provided with a junction box, the junction box is internally provided with an interconnection conductor communicated with the crystalline silicon photovoltaic cell connection group, a bypass diode is not arranged in the junction box, and the crystalline silicon photovoltaic cell connection group forms a complete crystalline silicon photovoltaic module with complementary polarity through a packaging adhesive film, the front panel, the back panel and the junction box.
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