CN110164889A - Imaging sensor and forming method thereof - Google Patents
Imaging sensor and forming method thereof Download PDFInfo
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- CN110164889A CN110164889A CN201910399948.1A CN201910399948A CN110164889A CN 110164889 A CN110164889 A CN 110164889A CN 201910399948 A CN201910399948 A CN 201910399948A CN 110164889 A CN110164889 A CN 110164889A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 171
- 230000004888 barrier function Effects 0.000 claims abstract description 165
- 239000000463 material Substances 0.000 claims abstract description 57
- 238000002955 isolation Methods 0.000 claims description 44
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 229910052735 hafnium Inorganic materials 0.000 claims description 6
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 6
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 6
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims description 3
- WUNIMIODOAGQAW-UHFFFAOYSA-N [O-2].[Ba+2].[Ti+4] Chemical compound [O-2].[Ba+2].[Ti+4] WUNIMIODOAGQAW-UHFFFAOYSA-N 0.000 claims description 3
- ILCYGSITMBHYNK-UHFFFAOYSA-N [Si]=O.[Hf] Chemical compound [Si]=O.[Hf] ILCYGSITMBHYNK-UHFFFAOYSA-N 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- CZXRMHUWVGPWRM-UHFFFAOYSA-N strontium;barium(2+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Ti+4].[Sr+2].[Ba+2] CZXRMHUWVGPWRM-UHFFFAOYSA-N 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 150000002500 ions Chemical class 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 6
- 229910021478 group 5 element Inorganic materials 0.000 description 4
- -1 boron ion Chemical class 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 230000005622 photoelectricity Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910005540 GaP Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 230000018199 S phase Effects 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- CKUAXEQHGKSLHN-UHFFFAOYSA-N [C].[N] Chemical compound [C].[N] CKUAXEQHGKSLHN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/1469—Assemblies, i.e. hybrid integration
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
A kind of imaging sensor and forming method thereof, wherein imaging sensor includes: substrate, the substrate includes the firstth area, the secondth area and third area, between the firstth area and third area, secondth area is adjacent with the firstth area in the second area, and the secondth area and third area are adjacent；Photosensitive structure in substrate third area；Positioned at the dielectric structure of substrate surface；Logic circuit in the dielectric structure in firstth area；Barrier structure in secondth area of substrate, the pyroconductivity of the material of the barrier structure are lower than the pyroconductivity of base material.The better performances of described image sensor.
Description
Technical field
The present invention relates to semiconductor fields more particularly to a kind of imaging sensor and forming method thereof.
Background technique
Imaging sensor can be used for sensing radiation, for example, light radiation, including but not limited to visible light, infrared ray, ultraviolet light
Deng.Imaging sensor is divided into back-illuminated type (BSI) imaging sensor in such a way that it receives radiation and (FSI) image front-illuminated passes
Sensor.
Back side illumination image sensor can be received from its back side and be radiated.Different from imaging sensor front-illuminated, in back-illuminated type
In imaging sensor, wiring etc. may influence to radiate received component generally within the front of substrate, and light is from the back of substrate
Face incidence enters.In such manner, it is possible to make incident light beam strikes into photodiode, without being blocked by wiring, thus improve into
Light quantity is penetrated, the shooting effect under illumination condition can be significantly improved.
Back side illumination image sensor includes pixel region and the logic area for surrounding pixel region, and wherein logic area includes image sensing
The control circuit (including transistor, a/D converter circuit, signal amplification circuit etc.) of device, the temperature when device of logic area works
It is higher.
However, the device density of conventional images sensor is higher, it is easy to cause the device of pixel region by high temperature in this way
It influences.Therefore, the performance of conventional images sensor needs to be further increased.
Summary of the invention
The technical problem to be solved by the present invention is to provide a kind of imaging sensors and forming method thereof, to improve imaging sensor
Performance.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of imaging sensor, comprising: substrate, the substrate
Including the firstth area, the secondth area and third area, the secondth area is between the firstth area and third area, secondth area and first area's phase
Neighbour, and the secondth area and third area are adjacent；Photosensitive structure in substrate third area；Positioned at the dielectric structure of substrate surface；Position
Logic circuit in the dielectric structure in firstth area；Barrier structure in secondth area of substrate, the blocking junction
The pyroconductivity of the material of structure is lower than the pyroconductivity of base material.
Optionally, the substrate includes opposite the first face and the second face；The barrier structure include the first barrier layer and
Second barrier layer, first face of substrate expose the first barrier layer, and second face of substrate exposes the second barrier layer.
Optionally, there is pre-determined distance between the bottom on first barrier layer and the bottom on the second barrier layer.
Optionally, the bottom connection of the bottom on first barrier layer and the second barrier layer.
Optionally, the barrier structure includes from the first barrier layer that substrate first extends towards the second face.
Optionally, the barrier structure includes from the second barrier layer that substrate second extends towards the first face.
Optionally, the material on first barrier layer includes: silica, silicon nitride, silicon oxynitride, silicon oxide carbide, carbon nitrogen
SiClx or carbon silicon oxynitride.
Optionally, second barrier layer includes: first layer and the second layer positioned at the first layer surface；The first layer
Material is hafnium, the hafnium include: hafnium oxide, zirconium oxide, hafnium silicon oxide, lanthana, zirconium silicon oxide, titanium oxide,
Tantalum oxide, strontium barium oxide titanium, barium monoxide titanium, strontium oxide strontia titanium or aluminium oxide；The material of the second layer includes: silica, nitridation
Silicon or aluminium oxide.
The present invention also provides the forming methods of any one of the above imaging sensor, comprising: provides substrate, the substrate packet
The firstth area, the secondth area and third area are included, between the firstth area and third area, secondth area is adjacent with the firstth area in the secondth area,
And second area and third area it is adjacent；Photosensitive structure is formed in substrate third area；Blocking junction is formed in secondth area of substrate
Structure, the pyroconductivity of the material of the barrier structure are lower than the pyroconductivity of base material；Dielectric structure is formed in substrate surface；
Logic circuit is formed in the dielectric structure in firstth area.
Optionally, the substrate includes opposite the first face and the second face；The barrier structure include the first barrier layer and
Second barrier layer, first face of substrate expose the first barrier layer, and second face of substrate exposes the second barrier layer.
Optionally, the forming method on first barrier layer includes: that the first groove, institute are formed in secondth area substrate
State the first face that the first groove top is located at the substrate；In first groove and the first face of substrate surface forms initial the
One barrier layer；Initial first barrier layer is planarized, forms first barrier layer, the substrate in first groove
First face exposes the first barrier layer.
Optionally, the forming method on second barrier layer includes: that the second groove, institute are formed in secondth area substrate
State the second face that the second groove top is located at the substrate；In second groove and the second face of substrate surface forms initial the
Two barrier layers；Initial second barrier layer is planarized, forms second barrier layer, the substrate in second groove
Second face exposes the second barrier layer.
Optionally, further includes: form fleet plough groove isolation structure, the fleet plough groove isolation structure position in substrate third area
Between adjacent photosensitive structure, first face of substrate exposes fleet plough groove isolation structure；It is formed during the first barrier layer
Form the fleet plough groove isolation structure.
Optionally, further includes: form deep trench isolation structure, the deep trench isolation structure bit in substrate third area
Between adjacent photosensitive structure, second face of substrate exposes deep trench isolation structure；It is formed during the second barrier layer
Form the deep trench isolation structure.
Optionally, further includes: bearing basement is provided；The bearing basement is bonded with dielectric structure.
Compared with prior art, the technical solution of the embodiment of the present invention has the advantages that
In the imaging sensor that technical solution of the present invention provides, logic circuit is also easy to produce heat, logic circuit at work
In the dielectric structure in the firstth area, in the heat transmission to the firstth area of substrate that logic circuit generates.Barrier structure is located at substrate
In secondth area, and the pyroconductivity of the material of barrier structure is lower than the pyroconductivity of base material, and barrier structure can stop substrate
The heat in the firstth area is conducted to substrate third area, therefore the thermal energy of barrier structure energy isolation logic circuit is to device in substrate third area
The influence of part is conducive to the performance for improving imaging sensor.
Further, the bottom connection of the bottom on first barrier layer and the second barrier layer, the isolation effect of barrier structure
More preferably, influence of the thermal energy of the better isolation logic circuit of energy to device in substrate third area, is conducive to improve imaging sensor
Performance.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of imaging sensor；
Fig. 2 to Fig. 6 is the structural schematic diagram of each step of one embodiment of forming method of the image sensor of that present invention；
Fig. 7 to Figure 10 is the structural schematic diagram of each step of another embodiment of forming method of the image sensor of that present invention.
Specific embodiment
As described in background, the performance of conventional images sensor is poor, is described in detail below:
Fig. 1 is a kind of the schematic diagram of the section structure of image sensor embodiment.
A kind of imaging sensor, referring to FIG. 1, including: substrate 100, the substrate 100 includes pixel region A and logic area
B, pixel region A and logic area B are adjacent and are in contact；Pixel photosensitive unit 130 in the 100 pixel region A of substrate；It is located at
The dielectric structure 110 on 100 surface of substrate, the logic circuit 140 in the dielectric structure 110 of logic area B.
In above-mentioned imaging sensor, the logic circuit in 110 logic area B of dielectric structure is also easy to produce heat in the process of work
Amount, therefore heat is easily transmitted in logic area B substrate 100, and the pixel region A of substrate 100 connects with the logic area B of substrate 100
Touching, therefore, the heat that the logic circuit generates easily are transmitted in 100 pixel region of substrate.When excessive heat is gathered in substrate
When in 100 pixel regions, easily the device in 100 pixel region of substrate is impacted, is unfavorable for improving the performance of imaging sensor.
In order to solve the above technical problems, technical solution of the present invention provides a kind of imaging sensor, comprising: substrate, the base
Bottom includes the firstth area, the secondth area and third area；Positioned at the dielectric structure of substrate surface；In the dielectric structure in firstth area
Logic circuit；The pyroconductivity of barrier structure in secondth area of substrate, the material of the barrier structure is lower than base
The pyroconductivity of bottom material.The firstth area of substrate and substrate third area, therefore barrier structure energy isolation logic can be isolated in barrier structure
Influence of the thermal energy of circuit to device in substrate third area.It is formed by the better performances of image sensor.
It is understandable to enable above-mentioned purpose of the invention, feature and beneficial effect to become apparent, with reference to the accompanying drawing to this
The specific embodiment of invention is described in detail.
Fig. 2 to Fig. 6 is the structural schematic diagram of each step of one embodiment of forming method of the image sensor of that present invention.
Referring to FIG. 2, providing substrate 200.
Substrate is provided, the substrate includes the first area I, the second area II and third area III, and the second area II is located at the first area I
Between third area III, the secondth area II is adjacent with the first area I, and the second area II and third area III are adjacent.
The material of the substrate 200 is semiconductor material.In the present embodiment, the material of the substrate 200 is silicon.Other realities
Apply in example, the material of the substrate include silicon carbide, SiGe, III-group Ⅴ element constitute polynary semiconductor material, on insulator
Silicon (SOI) or germanium on insulator.Wherein, III-group Ⅴ element constitute polynary semiconductor material include InP, GaAs, GaP,
InAs, InSb, InGaAs or InGaAsP.
The substrate 200 includes opposite the first face 201 and the second face 202.
Photosensitive structure 210 is formed in substrate third area III.
In the present embodiment, the material of the substrate is silicon.The substrate with a thickness of 2.5um~4um.
In the present embodiment, photosensitive structure 210 is formed in the third area III substrate 200.
In the present embodiment, the photosensitive structure 210 is photodiode.
The forming method of the photosensitive structure 210 includes: to form well region (not shown) in secondth area substrate 200, institute
Stating has the first Doped ions in well region；Photoelectricity doped region (not shown) is formed in the well region, in the photoelectricity doped region
With the second Doped ions, the conduction type of second Doped ions is opposite with the conduction type of the first Doped ions.
In the present embodiment, first Doped ions are P-type ion, such as: boron ion, and second Doped ions are N
Type ion, such as: phosphonium ion or arsenic ion.In other embodiments, first Doped ions be N-type ion, described second
Doped ions are P-type ion.
Due to the conduction type of first Doped ions and the second Doped ions on the contrary, therefore, the photoelectricity doped region
Photodiode is constituted between well region, the photodiode is used to converting photons be electronics.The electronics is by subsequent
Second conductive structure and conductive structure are transmitted to logic circuit, and the logic circuit is for controlling electronics.
Then, barrier structure, the pyroconductivity of the material of the barrier structure are formed in the 200 second area II of substrate
Lower than the pyroconductivity of base material.The barrier structure includes the first barrier layer and the second barrier layer, first face of substrate
The first barrier layer is exposed, second face of substrate exposes the second barrier layer.
Referring to FIG. 3, the first barrier layer 221 is formed in the substrate 200 of the second area II, 200 first face 201 of substrate
Expose the first barrier layer 221.
First barrier layer 221 is used for influence of the thermal energy of isolation logic circuit to device in substrate third area, favorably
In the performance for improving imaging sensor.
The forming method on first barrier layer 221 includes: to form the first groove in the secondth area of substrate II (not scheme
Show), first groove top is located at 200 first face 201 of substrate；In first groove and 200 first face of substrate
201 surfaces form initial first barrier layer (not shown), planarize initial first barrier layer, until exposing substrate 200
First face, 201 surface forms the first barrier layer 221 in first groove.
In the present embodiment, further includes: fleet plough groove isolation structure 222 is formed in the substrate 200 of third area III, it is described shallow
For groove isolation construction 222 between adjacent photosensitive structure 210,200 first face 201 of substrate exposes shallow trench isolation
Structure 222.
The fleet plough groove isolation structure 222 is used for the electrical interference being isolated between neighboring photosensitive structure.
In the present embodiment, during forming fleet plough groove isolation structure 222, first barrier layer 221 is formed.
In other embodiments, after forming fleet plough groove isolation structure, first barrier layer is formed；Or it forms first and stops
After layer, the fleet plough groove isolation structure is formed.
First barrier layer is 0.2um~0.4um along the size perpendicular to substrate direction.
The material on first barrier layer 221 includes: silica, silicon nitride, silicon oxynitride, silicon oxide carbide, carbonitride of silicium
Or carbon silicon oxynitride.
The material on first barrier layer 221 is silica.The material and base material on first barrier layer 221 are not
Together, the heat conductivity on first barrier layer is low, and the thermal energy of logic circuit can be stopped to the shadow of device in substrate third area III
It rings, is conducive to the performance for improving imaging sensor.
Referring to FIG. 4, forming dielectric structure 230, the medium of the firstth area I on 200 first face of substrate, 201 surface
There is logic circuit (not shown) in structure 230.
The material of the dielectric structure 230 includes silica or silicon oxynitride.The forming method of the dielectric structure 230
Including chemical vapor deposition process or physical gas-phase deposition.
The conductive structure 231 that the logic circuit includes semiconductor devices (not shown), is electrically connected with semiconductor devices.
The material of the conductive structure 231 includes: Al, Cu, W, Mo, Ta or Ti.
There is the second conductive structure (not shown) in the dielectric structure 230 in the third area, second conductive structure with
Conductive structure 231 is electrically connected, and is conducive to the electric signal that subsequent photodiode generates being transferred to logic circuit.
Referring to FIG. 5, forming the second barrier layer 251, the substrate in the substrate 200 after forming dielectric structure 230
200 second face, 202 surface exposes the second barrier layer 251.
The thermal energy of logic circuit of second barrier layer 251 for the first area I to be preferably isolated is to substrate third area III
The influence of interior device further improves the performance of imaging sensor.
The forming method on second barrier layer 251 includes: to form the second groove in the secondth area II substrate, described
Second groove top is located at the second face 202 of the substrate 200；In second groove and 200 second face of substrate, 202 surface
Initial second barrier layer (not shown) is formed, initial second barrier layer is planarized, until exposing 200 second face of substrate
202 surfaces form the second barrier layer 251 in second groove.
In the present embodiment, after forming dielectric structure 230, formed before the second groove, further includes: bearing basement 240 is provided；
The bearing basement 240 is bonded with dielectric structure 230.
The bearing basement 240 is used to provide carrying platform for described image sensor.
In the present embodiment, further includes: in the substrate 200 in third area formed deep trench isolation floor 252, the deep trench every
For absciss layer 252 between adjacent photosensitive structure 210,200 second face of substrate, 202 surface exposes deep trench isolation layer
252。
The light interference that the deep trench isolation layer 252 is used to be isolated between neighboring photosensitive structure 210.
In the present embodiment, during forming deep trench isolation layer 252, second barrier layer 251 is formed.
In other embodiments, after forming deep trench isolation layer, second barrier layer is formed；Or form the second barrier layer
Afterwards, the deep trench isolation layer is formed.
Second barrier layer 251 is 2.2um~3.7um along the size perpendicular to substrate direction.
Second barrier layer 251 includes: first layer and the second layer positioned at the first layer surface；The material of the first layer
For hafnium, the hafnium includes: hafnium oxide, zirconium oxide, hafnium silicon oxide, lanthana, zirconium silicon oxide, titanium oxide, oxidation
Tantalum, strontium barium oxide titanium, barium monoxide titanium, strontium oxide strontia titanium or aluminium oxide.The material of the second layer include: silica, silicon nitride or
Person's aluminium oxide.
In the present embodiment, the material of the first layer is hafnium oxide, and the material of the second layer is silica.Described second
The material on barrier layer 251 is different from base material, and the heat conductivity on second barrier layer 251 is low, can stop logic circuit
Influence of the thermal energy to device in substrate third area is conducive to the performance for improving imaging sensor.
In the present embodiment, the barrier structure includes the first barrier layer 221 and the second barrier layer 251.
Have in the present embodiment, between the bottom on first barrier layer 221 and the bottom on the second barrier layer 251 it is default away from
From.
Barrier structure is located in the secondth area of substrate II, and the pyroconductivity of the material of barrier structure is lower than 200 material of substrate
Pyroconductivity, barrier structure can stop the heat of 200 first area I of substrate to conduct to 200 third area III of substrate, therefore stop
Influence of the thermal energy of structure energy isolation logic circuit to device in 200 third area III of substrate is conducive to improve imaging sensor
Performance.
In one embodiment, with reference to Fig. 6, the second barrier layer 253, the substrate 200 second are formed in the substrate 200
202 surface of face exposes the second barrier layer 253.
The bottom on second barrier layer 253 connects with the top on the first barrier layer 221.
The bottom on second barrier layer 253 connects with the top on the first barrier layer 221.The isolation of the barrier structure is imitated
Fruit more preferably, can preferably be isolated influence of the thermal energy of the logic circuit of the first area I to device in substrate third area III, be conducive to
Improve the performance of imaging sensor.
In another embodiment, the barrier structure includes from the first barrier layer that substrate first extends towards the second face.
In another embodiment, the barrier structure includes the second barrier layer that substrate second extends towards the first face.
The embodiment of the present invention also provides the forming method of another imaging sensor；Fig. 7 to Figure 10 is that image of the present invention passes
The structural schematic diagram of each step of another embodiment of the forming method of sensor.
Substrate is provided, the substrate includes the first area I, the second area II and third area III, and the second area II is located at the first area I
Between third area III, the secondth area II is adjacent with the first area I and third area III and is in contact.
Referring to FIG. 7, providing substrate 300.
The material of the substrate 300 is semiconductor material.In the present embodiment, the material of the substrate 300 is silicon.At it
In his embodiment, the material of the substrate includes silicon carbide, SiGe, the polynary semiconductor material of III-group Ⅴ element composition, insulation
Silicon (SOI) or germanium on insulator on body.Wherein, III-group Ⅴ element constitute polynary semiconductor material include InP, GaAs,
GaP, InAs, InSb, InGaAs or InGaAsP.
The substrate 300 includes opposite the first face 301 and the second face 302.
Photosensitive structure 310 is formed in substrate third area III.
In the present embodiment, photosensitive structure 310 is formed in the third area III substrate 300.
In the present embodiment, the photosensitive structure 310 is photodiode.
Referring to FIG. 8, the first barrier layer 321 is formed in the substrate 300 of the second area II, 300 first face 301 of substrate
Surface exposes the first barrier layer 321.
In the present embodiment, further includes: fleet plough groove isolation structure 322 is formed in the substrate 300 of third area III, it is described shallow
For groove isolation construction 322 between adjacent photosensitive structure 310,300 first face of substrate, 301 surface exposes shallow trench
Isolation structure 322.
First barrier layer 321, the material of fleet plough groove isolation structure 322, structure and forming method such as Fig. 3 and aforementioned reality
It applies described in example, this will not be repeated here.
Referring to FIG. 9, forming the second barrier layer 351, the base in the substrate 300 after forming the first barrier layer 321
300 second face of bottom, 302 surface exposes the second barrier layer 351.
In the present embodiment, further includes: form deep trench isolation floor 352, the zanjon in the substrate 300 of third area III
For slot separation layer 352 between adjacent photosensitive structure 310,300 second face of substrate, 302 surface exposes deep trench isolation
Layer 352.
Second barrier layer 351, the material of deep trench isolation layer 352, structure and forming method such as Fig. 5 and aforementioned implementation
Described in example, this will not be repeated here.
Referring to FIG. 10, forming medium knot on 300 first face of substrate, 301 surface after forming the second barrier structure 351
Structure 330, the dielectric structure 330 in firstth area is interior to have logic circuit (not shown).
The conductive structure 331 that the logic circuit includes semiconductor devices (not shown), is electrically connected with semiconductor devices.
The dielectric structure 330, the material of conductive structure 331, structure and forming method such as Fig. 4 and previous embodiment intermediary
Described in matter structure 230, conductive structure 231, this will not be repeated here.
In the present embodiment, after forming dielectric structure 330, further includes: bearing basement 340 is provided；By the bearing basement 340
It is bonded with dielectric structure 330.
Correspondingly, the present invention also provides a kind of imaging sensors, referring to FIG. 10, include: substrate 300, the substrate 300
Including the first area I, the second area II and third area III, the second area II is between the first area I and third area III, secondth area
II is adjacent with the first area I, and the second area II and third area III are adjacent；Photosensitive structure in 300 third area III of substrate
310；Dielectric structure 330 positioned at 300 surface of substrate；Logic circuit in the dielectric structure 330 of the firstth area I；Position
Barrier structure in the 300 second area II of substrate, the pyroconductivity of the material of the barrier structure are lower than the material of substrate 300
The pyroconductivity of material.
The logic circuit includes semiconductor devices and the conductive structure being electrically connected with semiconductor devices 231.
The substrate 300 includes opposite the first face 301 and the second face 302；The barrier structure includes the first barrier layer
321 and second barrier layer 351,300 first face of substrate, 301 surface exposes the first barrier layer 321, second face of substrate
302 surfaces expose the second barrier layer 351.
In the present embodiment, further includes: bearing basement 340 is provided；The bearing basement 340 is bonded with dielectric structure 330.
Have in the present embodiment, between the bottom on first barrier layer 321 and the bottom on the second barrier layer 351 it is default away from
From.
The material on first barrier layer 321, structure and forming method are as in the foregoing embodiment, and this will not be repeated here.
The material on second barrier layer 351, structure and forming method are as in the foregoing embodiment, and this will not be repeated here.
In one embodiment, the bottom connection of the bottom on first barrier layer and the second barrier layer.
In another embodiment, the barrier structure includes from the first barrier layer that substrate first extends towards the second face.
In another embodiment, the barrier structure includes from the second barrier layer that substrate second extends towards the first face.
Barrier structure is located in the secondth area of substrate II, and substrate the firstth area I and substrate third area III can be isolated in barrier structure,
Therefore influence of the thermal energy of barrier structure energy isolation logic circuit to device in substrate third area III is conducive to improve image biography
The performance of sensor.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (15)
1. a kind of imaging sensor characterized by comprising
Substrate, the substrate include the firstth area, the secondth area and third area, and the secondth area is described between the firstth area and third area
Secondth area is adjacent with the firstth area, and the secondth area and third area are adjacent；
Photosensitive structure in substrate third area；
Positioned at the dielectric structure of substrate surface；
Logic circuit in the dielectric structure in firstth area；
Barrier structure in secondth area of substrate, the pyroconductivity of the material of the barrier structure is lower than base material
Pyroconductivity.
2. imaging sensor as described in claim 1, which is characterized in that the substrate includes opposite the first face and second
Face；The barrier structure includes the first barrier layer and the second barrier layer, and first face of substrate exposes the first barrier layer, described
The second face of substrate exposes the second barrier layer.
3. imaging sensor as claimed in claim 2, which is characterized in that the bottom and the second barrier layer on first barrier layer
Bottom between have pre-determined distance.
4. imaging sensor as claimed in claim 2, which is characterized in that the bottom and the second barrier layer on first barrier layer
Bottom connection.
5. imaging sensor as described in claim 1, which is characterized in that the barrier structure includes from substrate first towards
The first barrier layer that two faces extend.
6. imaging sensor as described in claim 1, which is characterized in that the barrier structure includes from substrate second towards
The second barrier layer extended on one side.
7. the imaging sensor as described in claim 2 or 5, which is characterized in that the material on first barrier layer includes: oxidation
Silicon, silicon nitride, silicon oxynitride, silicon oxide carbide, carbonitride of silicium or carbon silicon oxynitride.
8. the imaging sensor as described in claim 2 or 6, which is characterized in that second barrier layer includes: first layer and position
In the second layer of the first layer surface；The material of the first layer be hafnium, the hafnium include: hafnium oxide, zirconium oxide,
Hafnium silicon oxide, lanthana, zirconium silicon oxide, titanium oxide, tantalum oxide, strontium barium oxide titanium, barium monoxide titanium, strontium oxide strontia titanium or aluminium oxide；
The material of the second layer includes: silica, silicon nitride or aluminium oxide.
9. a kind of forming method of any one of such as claim 1 to 8 described image sensor characterized by comprising
There is provided substrate, the substrate include the firstth area, the secondth area and third area, the secondth area between the firstth area and third area,
Secondth area is adjacent with the firstth area, and the secondth area and third area are adjacent；
Photosensitive structure is formed in substrate third area；
Barrier structure is formed in secondth area of substrate, the pyroconductivity of the material of the barrier structure is lower than base material
Pyroconductivity；
Dielectric structure is formed in substrate surface；
Logic circuit is formed in the dielectric structure in firstth area.
10. the forming method of imaging sensor as claimed in claim 9, which is characterized in that the substrate includes opposite
On one side with the second face；The barrier structure includes the first barrier layer and the second barrier layer, and first face of substrate exposes first
Barrier layer, second face of substrate expose the second barrier layer.
11. the forming method of imaging sensor as claimed in claim 10, which is characterized in that the formation on first barrier layer
Method includes: that the first groove is formed in secondth area substrate, and first groove top is located at the first face of the substrate；
In first groove and the first face of substrate surface forms initial first barrier layer；Initial first barrier layer is planarized,
Until exposing the first face of substrate surface, first barrier layer is formed in first groove, first face of substrate is sudden and violent
Expose the first barrier layer.
12. the forming method of imaging sensor as claimed in claim 10, which is characterized in that the formation on second barrier layer
Method includes: that the second groove is formed in secondth area substrate, and second groove top is located at the second face of the substrate；
In second groove and the second face of substrate surface forms initial second barrier layer；Initial second barrier layer is planarized,
Until exposing the second face of substrate surface, second barrier layer is formed in second groove, second face of substrate is sudden and violent
Expose the second barrier layer.
13. the forming method of imaging sensor as claimed in claim 11, which is characterized in that further include: in the substrate
3rd area form fleet plough groove isolation structure, and the fleet plough groove isolation structure is between adjacent photosensitive structure, and the substrate the
Fleet plough groove isolation structure is exposed on one side；It forms the first barrier layer and forms the fleet plough groove isolation structure in the process.
14. the forming method of imaging sensor as claimed in claim 12, which is characterized in that further include: in the substrate the
3rd area form deep trench isolation structure, and the deep trench isolation structure is between adjacent photosensitive structure, and the substrate the
Two faces expose deep trench isolation structure；It forms the second barrier layer and forms the deep trench isolation structure in the process.
15. the forming method of imaging sensor as claimed in claim 9, which is characterized in that further include: bearing basement is provided；
The bearing basement is bonded with dielectric structure.
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| US20090021626A1 (en) * | 2005-01-27 | 2009-01-22 | Matsushita Electric Industrial Co., Ltd. | Solid state imaging apparatus and method for fabricatig the same |
| CN101567377A (en) * | 2008-04-21 | 2009-10-28 | 索尼株式会社 | Solid camera device, method for manufacturing the solid camera device, and electronic device |
| US20110089517A1 (en) * | 2009-10-20 | 2011-04-21 | Omnivision Technologies, Inc. | Cmos image sensor with heat management structures |
| CN107527929A (en) * | 2016-06-16 | 2017-12-29 | 瑞萨电子株式会社 | The method of semiconductor device and manufacture semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090021626A1 (en) * | 2005-01-27 | 2009-01-22 | Matsushita Electric Industrial Co., Ltd. | Solid state imaging apparatus and method for fabricatig the same |
| CN101567377A (en) * | 2008-04-21 | 2009-10-28 | 索尼株式会社 | Solid camera device, method for manufacturing the solid camera device, and electronic device |
| US20110089517A1 (en) * | 2009-10-20 | 2011-04-21 | Omnivision Technologies, Inc. | Cmos image sensor with heat management structures |
| CN107527929A (en) * | 2016-06-16 | 2017-12-29 | 瑞萨电子株式会社 | The method of semiconductor device and manufacture semiconductor device |
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