CN110162267A - Flash memory storage and write-in management method - Google Patents
Flash memory storage and write-in management method Download PDFInfo
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- CN110162267A CN110162267A CN201810472910.8A CN201810472910A CN110162267A CN 110162267 A CN110162267 A CN 110162267A CN 201810472910 A CN201810472910 A CN 201810472910A CN 110162267 A CN110162267 A CN 110162267A
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- 230000005055 memory storage Effects 0.000 title claims abstract description 23
- 238000007726 management method Methods 0.000 title claims abstract description 17
- 230000015654 memory Effects 0.000 claims abstract description 187
- 238000003860 storage Methods 0.000 claims description 41
- 238000013507 mapping Methods 0.000 claims description 16
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000006399 behavior Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/0604—Improving or facilitating administration, e.g. storage management
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0629—Configuration or reconfiguration of storage systems
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0638—Organizing or formatting or addressing of data
- G06F3/064—Management of blocks
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0655—Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
- G06F3/0658—Controller construction arrangements
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0673—Single storage device
- G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
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- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Human Computer Interaction (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
Abstract
The present invention provides a kind of flash memory storage and write-in management method.The write-in management method of flash memory includes: to detect the size of the unused block of user's block of flash memory；Calculate the ratio of the size of size and user's block that block is not used；And the switching action of the memory module of flash memory is carried out according to ratio, wherein the memory module of flash memory includes single-order memory module and multistage memory module.
Description
Technical field
The present invention relates to a kind of flash memory storages and write-in management method, more particularly to can promote memory space
Service efficiency flash memory storage and write-in management method.
Background technique
Flash memory in the development of storage storage unit, drilled by single bit by the data storage of a storage unit
Into at more bit architectures, make its same quantity storage unit when flash memory, more bit storage frameworks can obtain more
The advantage of capacity.In general, most of more bit storage flash memories provide single bit memory module simultaneously.However
The read or write speed of flash memory yields to the physical structure in storage unit, and speed is according to fastly to slow respectively single-order storage unit
(Single-Level Cell, SLC), multi-level cell memory (Multi-Level Cell, MLC), three rank storage units
(Triple-Level Cell, TLC), quadravalence storage unit (Quad-Level Cell, QLC).
Traditionally, each memory cell stores up 1 information bit, referred to as single-order storage unit, single using this storage
The flash memory of member is also referred to as single-order storage unit flash memory (SLC flash memory) or abbreviation SLC flash memory
Reservoir.The advantages of SLC flash memory be transmission speed faster, power consumption is lower and the longer life expectancy of storage unit.So
And since the information that each storage unit includes is less, every megabit of group need to spend higher cost to produce.It is multistage to deposit
Storage unit can store up 2 or more information bits in each memory cell, and it is multiple that " multistage " refers to that charge charging has
Energy rank (i.e. multiple voltage values), just can so store the value of multiple bits in each storage unit.Use this storage unit
Flash memory be also referred to as multi-level cell memory flash memory (MLC flash memory) or abbreviation MLC flash
Device.More bits can be stored by each storage unit, MLC flash memory can reduce production cost, but compared with SLC quick flashing
Memory, transmission speed is slower, and power consumption is higher lower with the service life of storage unit.
It should be noted that be based on flash memory hardware level, it is single with MLC mode in use, tolerance is lower, need
Increasingly complex instruction and accurate physics actuation, certainly will need the more interminable time compared with SLC.But it is single with SLC mode
It uses, and the shortcomings that memory capacity is reduced can be faced.Therefore, how to overcome and read and write efficiency limitation under more bit storage frameworks, then
The project that engineer as related fields is paid attention to.
Summary of the invention
The present invention provides a kind of flash memory storage and write-in management method, and passes through monitoring flash memory
The unused block of user's block switches the memory module of flash memory to promote the service efficiency of memory space.
The present invention provides a kind of write-in management method of flash memory comprising: detect the user of flash memory
The size of the unused block of block；Calculate the ratio of the size of size and user's block that block is not used；And foundation
Ratio carries out the switching action of the memory module of flash memory, and wherein the memory module of flash memory includes single-order storage mould
Formula and multistage memory module.
The present invention provides a kind of flash memory storage, including flash memory and controller.Flash memory
With user's block and system block.Controller is coupled to flash memory, to: detect the user of flash memory
The size of the unused block of block；Calculate the ratio of the size of size and user's block that block is not used；And foundation
Ratio carries out the switching action of the memory module of flash memory, and wherein the memory module of flash memory includes single-order storage mould
Formula and multistage memory module.
Based on user's block above-mentioned, that flash memory storage provided by the invention passes through monitoring flash memory
Overall size and unused block size proportionate relationship, the switching action of Lai Jinhang memory module.In this way, flash memory
Reservoir can carry out storing data according to actual use state, promote the service efficiency of memory space.
To make the foregoing features and advantages of the present invention clearer and more comprehensible, special embodiment below, and it is detailed to cooperate attached drawing to make
Carefully it is described as follows.
Detailed description of the invention
Fig. 1 illustrates the block diagram of the flash memory storage of exemplary embodiment of the invention.
Fig. 2 illustrates the flow chart of the write-in management method of the flash memory of exemplary embodiment of the invention.
Fig. 3 A and Fig. 3 B illustrate the schematic diagram of the flash memory of exemplary embodiment of the invention.
Fig. 4 illustrates the schematic diagram of the mapping table of exemplary embodiment of the invention.
Fig. 5 illustrates the flow chart of the method for the switching memory module of the flash memory of exemplary embodiment of the invention.
Drawing reference numeral explanation
100: flash memory storage；
110: flash memory；
120: controller；
S201, S203, S205: the step of management method is written；
310: user's block；
3101: having used block；
3102: block is not used；
320: system block；
400: mapping table；
410~4N0: map information；
4102: label；
S501, S503, S505, S507: the step of management method is written.
Specific embodiment
Fig. 1 illustrates the block diagram of flash memory storage according to an exemplary embodiment of the invention.Please refer to figure
1, the flash memory storage 100 of the present embodiment includes flash memory 110 and controller 120.Controller 120 is coupled to
Flash memory 110.Wherein, flash memory 110 can have system block and user's block.System block can be used to deposit
Storage system temporal data.User's block then can be used to store the data for coming from user's end (such as electronic device).In this hair
In bright embodiment, controller 120 can detect the state data memory of flash memory 110, such as controller 120 can detect quick flashing
The size of the unused block of user's block in memory 110.Also, controller 120 simultaneously calculates the ruler that block is not used
The very little ratio with the size of user's block in flash memory 110.Specifically bright, the size of user's block can be preparatory
It is stored in controller 120.Also, controller 120 can make to detect and the size and user's block of the unused block of acquisition
Size carry out division arithmetic, to generate the ratio.
Also, the switching that controller 120 can carry out the memory module of flash memory 110 according to above-mentioned ratio is dynamic
Make.Wherein, in the embodiment of the present invention, memory module can have single-order memory module and multistage memory module.Work as flash memory
110 operations indicate that each of flash memory 110 storage unit can store single a bit in single-order memory module
Data.Opposite, when the operation of flash memory 110 is in multistage memory module, each of expression flash memory 110 is deposited
Storage unit can store the data of multiple bits (more than one bit).In embodiments of the present invention, when flash memory 110 operates
In multistage memory module, each of flash memory 110 storage unit can record two, three, four, or more
The data of bit, do not limit specifically.
Further, since the storage unit of flash memory 110 can be single-order memory module or multistage memory module, control
Mapping table is arranged so that user's end judges the memory module of each storage unit in device 120.Mapping table includes in flash memory
Multiple map informations between multiple physical address and multiple logical addresses.
Subsidiary one mentions, and flash memory 110 can be NOR type flash memory, be also possible to NAND type flash
Device.Also, flash memory storage 100 can be storage card or solid state hard disk (Solid State Drive, SSD) etc.,
And flash memory storage 100 may be disposed at digital camera, mobile phone, music player, tablet computer or PC etc.
In any electronic device.
In addition, the hardware structure about controller 120, controller 120 can be the processor of tool operational capability.Alternatively,
Controller 120 can be by hardware description language (Hardware Description Language, HDL) or other
The design method for digital circuit well-known to those skilled in the art of anticipating is designed, and can programmed logic gate array by scene
Column (Field Programmable Gate Array, FPGA), complexity can program logic device (Complex
Programmable Logic Device, CPLD) or special application integrated circuit (Application-specific
Integrated Circuit, ASIC) mode come the hardware circuit realized.
Referring to Fig. 1 and Fig. 2, wherein Fig. 2 illustrates the write-in of the flash memory of exemplary embodiment of the invention
The flow chart of management method.Fig. 2 is please referred to, step S201 detects the unused block of user's block of flash memory 110
Size.Specifically, controller 120 can periodically detect flash memory 110 to calculate the use of flash memory 110
The size of the unused block of person's block.Then, step S203 then calculates the ruler of size and user's block that block is not used
Very little ratio.Furthermore, controller 120 can carry out division for the size of size and user's block that block is not used
Operation, and use acquisition ratio.Then, step S205 then carries out the switching of the memory module of flash memory 110 according to ratio
Movement.Specifically, the preset value that controller 120 can arbitrarily be set for ratio obtained and user is compared dynamic
Make, and switches the memory module of flash memory 110 according to comparison result.It further illustrates, user can be according to certainly
The numerical value of oneself demand adjustment preset value.Wherein, it is worth mentioning, preset value can be by designer according to flash memory 110
Actual behaviour in service be arranged, be not particularly limited.
Fig. 3 A and Fig. 3 B illustrate the schematic diagram of flash memory according to an exemplary embodiment of the invention.Referring to
Fig. 1, Fig. 3 A and Fig. 3 B, flash memory 110 include user's block 310 and system block 320.It is wrapped in user's block 310
It includes and has used block 3101 and unused block 3102.User's block 310 can be preset as single-order memory module by controller 120
Or multistage memory module, it is not particularly limited.
Fig. 3 A is please referred to, in user's block 310, in the case where the size that block 3102 is not used is relatively large, control
Device 120 processed can be according to ratio and the comparison result of preset value, to judge that user's block 310 has enough unused blocks
3102.Controller 120 can set single-order memory module for the memory module of unused block 3102.Furthermore, if control
Device 120 processed judges that block 3102 is not used to be occupied in user's block 310 according to ratio and the comparison result of preset value
The memory module of unused block 3102 can be converted into single-order memory module by enough ratios, controller 120.To promote data
Storage speed with and reliability.
Fig. 3 B is please referred to below, in user's block 310, in the relatively small situation of the size that block 3102 is not used
Under, controller 120 can according to ratio and the comparison result of preset value, come judge user's block 310 do not have it is enough not
Use block 3102.Controller 120 can set multistage memory module for the memory module of unused block 3102.Further and
Speech, if controller 120 according to ratio and the comparison result of preset value, judges to be not used block 3102 in user's block
Enough ratios are not occupied in 310, the memory module of unused block 3102 can be converted into multistage storage mould by controller 120
Formula, to store the storing data of more size.
Fig. 4 illustrates the schematic diagram of the mapping table of exemplary embodiment of the invention.Fig. 4 is please referred to, in implementation of the invention
In mode, mapping table 400 can be separately set, wherein mapping table 400 includes multiple map informations in flash memory storage
410~4N0.410~4N0 of map information is recorded respectively between multiple physical address and multiple logical addresses in flash memory
Corresponding relationship.Mapping table 400 may be provided in any form of storaging medium in flash memory storage, for example, quiet
State random access memory (Static Random-Access Memory, SRAM), dynamic random access memory (Dynamic
Random Access Memory, DRAM) and/or flash memory in.Mapping table 400 can be used to receive user's end (such as
Electronic device) produced by logical address.Mapping table 400 and according to the received logical address of institute to generate corresponding flash
The physical address of device.To confirm that the corresponding memory module of storage unit of corresponding physical address is single-order memory module or multistage
Memory module, a settable label (such as label 4102) in map information (such as map information 410).Wherein label 4102 can
Represent the corresponding memory module of memory block of the physical address in map information 410.In embodiments of the present invention, label 4102
It may be disposed at any one bit in map information 410.For example bright, label 4102 can patrol for the first logical value or second
Collect value, wherein when label 4102 can be the first logical value, indicate the corresponding storage of physical address in map information 410
Mode is single-order memory module.Opposite, when label 3102 can be the second logical value, indicate the reality in map information 410
The corresponding memory module in body address is multistage memory module.The first above-mentioned logical value can be logic level " 0 " (or logic
Level " 1 "), and the second logical value can be logic level " 1 " (or logic level " 0 ").
In other embodiments of the present invention, label 4102 also can have two or more bits, and there is no special
Fixed limitation.For example, label 4102 can be any two bits in map information 410.When label 4102 can be the
When one logical value " 00 ", indicate that the corresponding memory module of physical address in map information 410 is single-order memory module.Then,
When label 4102 can be the second logical value " 01 ", indicate that the corresponding memory module of physical address in map information 410 is
Each storage unit can record the multistage memory module of the data of two bits.Furthermore when label 4102 can patrol for third
When collecting value " 10 ", indicate that the corresponding memory module of physical address in map information 410 is each storage unit recordable three
The multistage memory module of the data of a bit.And when label 4102 can be the 4th logical value " 11 ", indicate mapping letter
The corresponding memory module of physical address in breath 410 is the multistage storage for the data that each storage unit can record four bits
Mode.
Certainly, the above-mentioned logical value of label 4102 and the corresponding relationship of memory module are merely the example of explanation, no
To limit scope of the invention.Those skilled in the art can carry out defined label according to actual demand according to above-mentioned example
4102 logical value and the corresponding relationship of memory module, are not particularly limited.
In other words, controller can obtain mapped physical address according to the label of the map information corresponding to logical address
Memory module.Furthermore, when user's end reads the data of flash memory, user's end can be according to mapping table
The marker for judgment of map information should read data with single-order memory module or multistage memory module.
Fig. 5 illustrates the flow chart of the method for the switching memory module of the flash memory of exemplary embodiment of the invention.
It please refers to Fig. 5, the unused block of flash memory is preset as single-order memory module or multistage memory module in step S501.
Then, step S503 judges whether the ratio of the size of the size that block is not used and user's block is greater than preset value, if greatly
In preset value, then enter step in S505.If being less than preset value, enter step in S507.In step S505, controller will
Unused block is set as single-order memory module.In step s 507, unused block is set multistage storage mould by controller
Formula.
In conclusion user block of the flash memory storage provided by the invention by monitoring flash memory
Overall size and unused block size proportionate relationship, the switching action of Lai Jinhang memory module.In this way, flash memory
Reservoir can carry out storing data according to actual use state, promote the service efficiency of memory space.In addition, the present invention is in small data
The space of amount using when be able to maintain efficient read-write, and it is original using holding also to possess memory in face of the storage of big data quantity
Amount.Therefore, the present invention can improve the service efficiency of flash memory storage.
Although the present invention is disclosed as above with embodiment, however, it is not to limit the invention, any technical field
Middle technical staff, without departing from the spirit and scope of the present invention, when can make a little change and retouching, therefore protection of the invention
Range is subject to view as defined in claim.
Claims (10)
1. a kind of write-in management method of flash memory characterized by comprising
Detect the size of the unused block of user's block of the flash memory；
Calculate the ratio of the size of the unused block and the size of user's block；And
The switching action of the memory module of the flash memory is carried out according to the ratio,
Wherein the memory module of the flash memory includes single-order memory module and multistage memory module.
2. the write-in management method of flash memory according to claim 1, wherein being carried out according to the ratio described fast
The switching action of the memory module of flash memory includes:
Judge whether the ratio is greater than preset value, and when the ratio is greater than the preset value, sets the flash memory
The memory module of reservoir is the single-order memory module；And
When the ratio is not more than the preset value, the memory module of the flash memory is set as the multistage storage
Mode.
3. the write-in management method of flash memory according to claim 1, further includes:
The memory module for presetting the flash memory is the single-order memory module or the multistage memory module.
4. the write-in management method of flash memory according to claim 1, further includes:
Mapping table is set, wherein the mapping table includes multiple physical address and multiple logical addresses in the flash memory
Between multiple map informations.
5. the write-in management method of flash memory according to claim 4, further includes:
Label is set in each map information, wherein the label is the corresponding each entity of each map information
The memory module of address.
6. a kind of flash memory storage characterized by comprising
Flash memory has user's block and system block；And
Controller, is coupled to the flash memory, the controller to:
Detect the size of the unused block of user's block of the flash memory；
Calculate the ratio of the size of the unused block and the size of user's block；And
The switching action of the memory module of the flash memory is carried out according to the ratio,
Wherein the memory module of the flash memory includes single-order memory module and multistage memory module.
7. flash memory storage according to claim 6, wherein the controller to:
Judge whether the ratio is greater than preset value, and when the ratio is greater than the preset value, sets the flash memory
The memory module of reservoir is the single-order memory module；And
When the ratio is not more than the preset value, the memory module of the flash memory is set as the multistage storage
Mode.
8. flash memory storage according to claim 6, wherein the controller presets the flash memory
Memory module be the single-order memory module or the multistage memory module.
9. flash memory storage according to claim 6, wherein mapping table, the mapping is arranged in the controller
Table includes multiple map informations between multiple physical address and multiple logical addresses in the flash memory.
10. flash memory storage according to claim 9, wherein the controller is in each map information
Setting label, the label are the memory module of the corresponding each physical address of each map information.
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| Application Number | Priority Date | Filing Date | Title |
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| TW107105304 | 2018-02-13 | ||
| TW107105304A TWI687809B (en) | 2018-02-13 | 2018-02-13 | Flash memory storage device and programming management method thereof |
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| Publication number | Publication date |
|---|---|
| TW201935245A (en) | 2019-09-01 |
| TWI687809B (en) | 2020-03-11 |
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Application publication date: 20190823 |